CN115172394A - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
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- CN115172394A CN115172394A CN202210822683.3A CN202210822683A CN115172394A CN 115172394 A CN115172394 A CN 115172394A CN 202210822683 A CN202210822683 A CN 202210822683A CN 115172394 A CN115172394 A CN 115172394A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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Abstract
The application provides a semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductors. The semiconductor device includes: a substrate; the epitaxial layer is positioned on the front surface of the substrate and comprises a device region and a spacer region, the spacer region is positioned between two adjacent device regions, a groove is arranged between the device region and the spacer region, and the bottom of the groove is exposed out of the substrate; an APD cell located on the device region; and the electrode is positioned on the back surface of the substrate, wherein the electrode on the back surface of the substrate is provided with an optical window at a position corresponding to the device area. The semiconductor device and the manufacturing method thereof have the advantage of being capable of improving optical and electrical crosstalk.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof.
Background
The avalanche photodetector has many advantages of small volume, high gain and the like, can be applied to detection application of weak signals, and particularly, the detection array based on the avalanche photodetector is widely concerned in the situations of laser radar, medical imaging and the like.
In practical applications, an APD (avalanche photodiode) array often generates problems of optical crosstalk and electrical crosstalk. The optical crosstalk mainly avoids crosstalk caused by oblique incident light between adjacent pixel points, and the optical crosstalk is inevitably generated after secondary photons are transversely emitted to adjacent pixel points; the electrical crosstalk is mainly crosstalk caused by the lateral movement of photo-generated carriers, and the performance of the APD array is seriously influenced by the occurrence of the photoelectric crosstalk.
In summary, the APD array in the prior art has the problems of optical crosstalk and electrical crosstalk.
Disclosure of Invention
The present application is directed to a semiconductor device and a method for manufacturing the same, so as to solve the problems of optical crosstalk and electrical crosstalk in an APD array in the prior art.
In order to achieve the above object, the embodiments of the present application adopt the following technical solutions:
in one aspect, an embodiment of the present application provides a semiconductor device, including:
a substrate;
the epitaxial layer is positioned on the front surface of the substrate and comprises a device region and a spacer region, the spacer region is positioned between two adjacent device regions, a groove is arranged between the device region and the spacer region, and the bottom of the groove is exposed out of the substrate;
an APD cell located on the device region; and (c) a second step of,
and the electrode is positioned on the back surface of the substrate, and an optical window is arranged at the position, corresponding to the device area, of the electrode on the back surface of the substrate.
Optionally, the semiconductor device further comprises a spacer layer located on the spacer region; wherein,
the surface of the pad layer is higher than the upper surface of the device region.
Optionally, the thickness of the cushion layer is 2 to 10 μm.
Optionally, the material of the pad layer includes one or a combination of polyimide, benzocyclobutene, silicon oxide, silicon nitride, and metal.
Optionally, the semiconductor device further includes a reflective film on the trench sidewall and the bottom.
Optionally, the thickness of the reflective film is 100 to 1000nm.
Optionally, the material of the reflective film comprises Al 2 O 3 、SiO 2 、SiN 2 、Ta 2 O 5 And TiO 2 Or a combination thereof.
Optionally, the width of the spacer is 1 to 1000 μm.
On the other hand, an embodiment of the present application further provides a method for manufacturing a semiconductor device, where the method for manufacturing a semiconductor device includes:
providing a substrate;
growing an epitaxial layer along the front surface of the substrate;
etching a groove along the epitaxial layer, and defining a device region and a spacer region through the groove; the groove is positioned between the adjacent device area and the interval area, and the bottom of the groove is exposed out of the substrate;
manufacturing an APD unit along the surface of the device region;
and manufacturing an electrode along the back surface of the substrate, and etching an optical window at the position of the electrode relative to the device region.
Optionally, after the step of etching a trench along the epitaxial layer and defining a device region and a spacer region by the trench, the method further comprises:
depositing a blanket layer along the spacer regions;
and evaporating a reflecting film along the side wall and the bottom of the groove. Compared with the prior art, the method has the following beneficial effects:
the application provides a semiconductor device and a manufacturing method thereof, wherein the semiconductor device comprises: a substrate; the epitaxial layer is positioned on the front surface of the substrate and comprises a device region and a spacer region, the spacer region is positioned between two adjacent device regions, a groove is arranged between the device region and the spacer region, and the bottom of the groove is exposed out of the substrate; an APD cell located on the device region; and the electrode is positioned on the back surface of the substrate, wherein the electrode on the back surface of the substrate is provided with an optical window at the position corresponding to the device area. Because the epitaxial layer is arranged in a partitioning mode and the device region is isolated from the spacer region, on one hand, the photon-generated carriers cannot transversely move from the device region to the spacer region, so that the photon-generated carriers of two adjacent APD units cannot transversely move, and the electric crosstalk is effectively avoided. On the other hand, when secondary photons are emitted from one APD cell to an adjacent APD cell, the spacer region can play a certain isolation role, so that the problem of optical crosstalk can be effectively improved.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present disclosure.
Fig. 2 is a top view of a semiconductor device provided in an embodiment of the present application.
Fig. 3 is another schematic cross-sectional view of a semiconductor device according to an embodiment of the present application.
Fig. 4 is a schematic arrangement diagram of an optical window provided in the embodiment of the present application.
Fig. 5 is a first exemplary flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present disclosure.
Fig. 6 is a second exemplary flowchart of a method for manufacturing a semiconductor device according to an embodiment of the present disclosure.
In the figure: 110-a substrate; 120-an epitaxial layer; 121-a device region; 122-a spacer region; 130-APD cells; 140-an electrode; 150-a higher-pad layer; 160-reflective film.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as presented in the figures, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
As mentioned in the background, the APD array has problems of optical crosstalk and electrical crosstalk, so that how to effectively suppress the optical crosstalk is a difficult problem to overcome in the design and manufacture of the APD array.
In view of the above, the present application provides a semiconductor device, which achieves the purpose of effectively suppressing the photoelectric crosstalk by forming a device region and a spacer region on an epitaxial layer.
The following is an exemplary illustration of the semiconductor device provided in the present application:
as an optional implementation manner, please refer to fig. 1, the semiconductor device includes a substrate 110, an epitaxial layer 120, an APD cell 130, and an electrode 140, wherein the epitaxial layer 120 is located on a front surface of the substrate 110, the epitaxial layer 120 includes a device region 121 and a spacer region 122, the spacer region 122 is located between two adjacent device regions 121, the device region 121 and the spacer region 122 are isolated from each other, the spacer region 122 is used for preventing optical crosstalk and electrical crosstalk from occurring between two adjacent device regions 121, the APD cell 130 is located on the device region 121, the electrode 140 is located on a back surface of the substrate 110, and an optical window is disposed at a position of the electrode 140 on the back surface of the substrate 110, which corresponds to the device region.
The epitaxial layer 120 is divided into the device region 121 and the spacer region 122, so that the device region 121 and the spacer region 122 are isolated from each other, and an effect of effectively improving optical crosstalk and electrical crosstalk can be achieved. It should be noted that, in the present application, the isolation between the device region 121 and the spacer region 122 refers to that a trench is disposed between the device region 121 and the spacer region 122, and the bottom of the trench is exposed out of the substrate, so that the isolation is realized through the trench.
Specifically, as can be seen from fig. 2, on one hand, since a spacer region 122 is disposed between two adjacent device regions 121, and the device regions 121 are isolated from the spacer region 122, the photo-generated carriers cannot laterally move from the device regions 121 to the spacer region 122, so that the photo-generated carriers of two adjacent APD units 130 cannot laterally move, and thus electrical crosstalk is effectively avoided. On the other hand, when a secondary photon is emitted from one APD cell 130 to an adjacent APD cell 130, the spacer 122 can perform a certain isolation function, so that the problem of optical crosstalk can be effectively improved.
As an alternative implementation of the present application, the substrate 110 of the semiconductor device may be a highly doped InP substrate, and the epitaxial layer 120 is grown on the highly doped InP substrate. Compared with Si and GaAs materials, inP has the characteristics of high photoelectric conversion efficiency, high electron mobility, high working temperature, strong radiation resistance and good heat conduction. The InP substrate can be divided into an N-type substrate 110 and a P-type substrate 110, and the N-type InP substrate can be doped with sulfur, so that dislocation-free single crystal growth can be realized due to the obvious impurity hardening effect of sulfur in InP. The P-type InP substrate can be doped with zinc, and the zinc also has a strong impurity hardening effect, so that the dislocation ratio is low, and the service life of the device is prolonged.
The epitaxial layer 120 is grown along the front surface of the substrate 110, and in general, the epitaxial layer 120 may be composed of a plurality of different hierarchical structures for achieving different effects, for example, the epitaxial layer 120 may include an absorption layer, a graded layer, a charge layer, a multiplication layer, and a contact layer, wherein the contact layer is used for realizing ohmic contact with the APD cell 130, the multiplication layer is used for amplifying an electrical signal, and the charge layer is used for adjusting the electric field distribution of each layer.
It can be understood that, in the actual manufacturing process, the absorption layer, the gradient layer, the charge layer, the multiplication layer, and the contact layer need to be grown layer by layer in sequence, which is not described herein.
After the epitaxial layer 120 is grown, the APD cell 130 needs to be fabricated on the device region of the epitaxial layer 120, and after the APD cell 130 is fabricated, the APD cell 130 can be formed on the device region by processes such as doping, mesa etching, passivation, and gold half contact, which are not described herein.
It should be noted that, in one implementation manner, in the device structure, the spacer region 122 needs to be separately disposed from the device region 121, and meanwhile, different APD cells 130 are disposed on the corresponding device region 121, so that when the APD cells 130 are manufactured, various etching means can be used to etch the trench between the APD cells 130 and the spacer region 122. For example, the etching process may be performed by coating a photoresist as a mask, followed by patterning using the photoresist.
As an implementation, the width of the spacer is set to 1 to 1000 μm.
It should be noted that, in order to ensure that the epitaxial layer 120 is etched cleanly during the etching process, it is required to ensure that the substrate 110 with high doping is etched to expose the substrate 110, and on this basis, when the etching is stopped, the epitaxial layer 120 may be just etched cleanly, or may be etched deep into the substrate 110, that is, a part of the substrate 110 is also etched, which is not limited herein.
It is to be understood that, in order to etch the spacers 122, when etching the epitaxial layer 120, a portion of the epitaxial layer 120 needs to be left unetched and used as the spacers 122 between two adjacent APD cells 130. On this basis, when the epitaxial layer 120 is etched, two trenches, such as the trench a and the trench B shown in fig. 1, are actually etched between two adjacent APD units 130, and there is a gap between the trench a and the trench B, after the etching is completed, the epitaxial layer 120 between the trench a and the trench B can be used as the spacer region 122, and the epitaxial layers 120 at two sides of the trench a and the trench B can be used as the device region 121.
With continued reference to fig. 1, fig. 1 shows two APD cells 130 on the left and right sides, which are isolated from the device region 121 on the left side by the trench a and the device region 121 on the right side by etching the spacer region 122 formed by the trench a and the trench B, so as to ensure that the spacer region 122 located in the middle is isolated from the device region 121 on the left side by the trench B. Therefore, the photo-generated carriers of the APD unit 130 on the left side cannot move to the right side across the trench a and the trench B, and certainly, the photo-generated carriers of the APD unit 130 on the right side cannot move to the left side across the trench B and the trench a, thereby effectively avoiding electrical crosstalk. Meanwhile, the spacer 122 is arranged, so that a certain blocking effect can be achieved on secondary photons, and the problem of optical crosstalk can be effectively solved.
To make the improvement in optical crosstalk more evident, referring to fig. 3, in one implementation, the semiconductor device further includes a padding layer 150 located over the spacer region 122, and the surface of the padding layer 150 is higher than the upper surface of the APD cell 130.
Since the APD cell 130 can actually be used as a point light source, it is necessary to ensure that the blocking of secondary photons is achieved in the horizontal direction in order to prevent the secondary photons from being laterally emitted to adjacent APD cells 130. At the same time, it is also desirable to prevent crosstalk from incident light between APD cells 130. Therefore, after the padding layer 150 is arranged, the height of the padding layer 150 can be higher than that of the APD unit 130, so that complete isolation between two adjacent APD units 130 is realized, transverse secondary photons are completely blocked, and the effect of inhibiting optical crosstalk is better.
The material of the pad layer 150 is not limited in this application, and for example, the material of the pad layer 150 may include one or a combination of Polyimide (PI), benzocyclobutene (BCB), silicon oxide, silicon nitride, and metal. Preferably, the material of the raised layer 150 may be selected to be a non-transparent material, which is not limited herein. Taking polyimide as an example for manufacturing the pad up layer 150, the thickness of the polyimide layer is controlled by spin coating, after the spin coating is completed, the polyimide layer on the spacer 122 is retained through a photolithography process, the rest of the polyimide layer is removed, and then the pad up layer 150 is prepared through hard baking and curing.
Of course, the thickness of the polyimide layer is not limited in this application, and for example, the thickness of the pad layer 150 may be 2 to 10 μm.
In addition, although the spacer 122 can block secondary photons to some extent, the spacer 122 has a certain light transmittance due to the light transmittance of the epitaxial layer 120 itself, and thus the blocking property of the spacer 122 against secondary photons is effective.
In view of this, in order to improve the blocking effect on the secondary photons and further suppress the optical crosstalk between the adjacent APD cells 130, as an implementation manner, the semiconductor device further includes a reflective film 160 located on the sidewall and the bottom wall of the trench; the reflective film 160 is used to prevent crosstalk between two adjacent device regions 121.
For example, in an actual manufacturing process, the reflective film 160 may be manufactured by using an evaporation process, and then the reflective film 160 in the remaining region is removed, and the reflective film 160 in the trench between the spacer region 122 and the device region 121 is remained.
The reflective film 160 can reflect light, so that when secondary photons are emitted laterally, the secondary photons cannot be emitted to an adjacent APD cell 130 due to the reflection of the reflective film 160, and thus optical crosstalk is effectively printed. Meanwhile, the secondary photons are not easy to escape due to the reflection of the reflective film 160, so that the display effect of the APD cell 130 is better.
The material of the reflective film 160 is not limited in the present application, and for example, the material of the reflective film 160 may be Al 2 O 3 、SiO 2 、SiN 2 、Ta 2 O 5 And TiO 2 One or a combination thereof. The thickness of the reflective film 160, the refractive index of the material, and the wavelength of light can be selected according to actual conditions to achieve the best light reflection effect, and generally, the thickness of the reflective film 160 ranges from 100 nm to 1000nm.
As an implementation manner, referring to fig. 4, the arrangement manner of the optical windows disposed on the electrodes 140 on the back surface of the substrate 110 is the same as that of the APD cells 130, and both are arranged in an array. Each optical window is located at a position corresponding to the device region, that is, each optical window is disposed at an orthographic projection position of the APD unit 130. In one implementation, in order to avoid crosstalk between adjacent pixels caused by oblique incident light as much as possible, the size of the optical window is substantially the same as that of the APD cell 130, that is, the diameter of the optical window is equal to or slightly larger than that of the APD cell 130.
In addition, the APD cell 130 is sized substantially the same as the optical window, such that the front contact electrode 140 in the APD cell 130 can be used as a bonding pad for subsequent package bonding, and the coplanar electrode 140 is used as the electrode 140 on the back side of the substrate 110, which provides conditions for flip-chip bonding of the APD cell 130.
When the optical window is manufactured, a window corresponding to the APD unit 130 may be formed on the back surface of the substrate 110 and coated as a light source incident optical window, and the film may be an antireflection film to increase the light incident amount of the optical window. Metal evaporation is then performed on the remaining area of the back surface of the substrate 110 as a coplanar back electrode 140.
Therefore, in the semiconductor device provided by the present application, by providing the spacer 122, the raising layer 150, the reflective film 160, and other structures, the suppression of optical and electrical crosstalk is achieved, and the performance of the semiconductor device is effectively improved. Moreover, the semiconductor device structure is easy to be packaged by adopting a flip chip bonding mode.
Based on the foregoing implementation, referring to fig. 5, an embodiment of the present application further provides a method for manufacturing a semiconductor device, where the method for manufacturing a semiconductor device includes:
s102, providing a substrate.
And S104, growing an epitaxial layer along the front surface of the substrate.
S106, etching a groove along the epitaxial layer, and defining a device region and a spacer region through the groove; the groove is positioned between the adjacent device area and the spacer area, and the bottom of the groove is exposed out of the substrate.
And S108, manufacturing the APD unit along the surface of the device area.
S110, manufacturing an electrode along the back of the substrate, and etching an optical window at the position of the electrode relative to the device area.
The substrate provided by the application can be a highly doped InP substrate. And the epitaxial layer generally includes a plurality of layers, i.e., an absorption layer, a graded layer, a charge layer, a multiplication layer, and a contact layer. In one implementation, when the epitaxial layer needs to be etched, the device region and the mounting region can be defined on the epitaxial layer by coating the photoresist and etching the corresponding trench according to the patterned photoresist. The fabrication of the APD cells then continues over the device region. Note that, in order to achieve isolation between the device region and the spacer region by using the trench, when the trench is etched, the trench needs to be etched until the substrate is exposed.
And when the electrode is manufactured on the back surface of the substrate, a window can be etched in the area of the back surface of the substrate corresponding to the APD unit, a film is plated to be used as a light source incident light window, and then metal evaporation is performed on the rest area of the back surface of the substrate to be used as a coplanar back electrode.
Also, in order to make the effect of improving the optical crosstalk more obvious, as an implementation manner, after S106, referring to fig. 6, the method further includes:
s1071, depositing a spacer layer along the spacer region;
s1072, evaporating a reflecting film along the side wall and the bottom of the groove.
The padding layer can effectively block transverse emission of secondary photons, and meanwhile, crosstalk caused by oblique incident light between adjacent APD units can be avoided, so that the problem of optical crosstalk can be improved.
The material of the pad-up layer is not limited, for example, the material of the pad-up layer includes one or a combination of polyimide, benzocyclobutene, silicon oxide, silicon nitride, and metal, the height of the pad-up layer is not limited, for example, the height can be 2 μm to 10 μm, and in actual manufacturing, the material and the thickness can be selected according to actual requirements. Taking polyimide as an example, the thickness of a polyimide layer is controlled by a spin coating rate, after the spin coating is finished, the polyimide on the spacing layer is reserved through a photoetching process, the rest part of the polyimide is removed, and the preparation of the cushion high layer is finished through hard baking and curing.
In addition, the reflective film can prevent adjacent APD cells from optical crosstalk between the device region and the spacer region.
Wherein the material of the reflective film comprises Al 2 O 3 、SiO 2 、SiN 2 、Ta 2 O 5 And TiO 2 2 Or a combination thereof, and the thickness of the reflective film may be 100 to 1000nm, and certainly, the thickness of the reflective film, the refractive index of the material, and the wavelength of light need to be calculated and obtained according to actual conditions, and the corresponding material needs to be selected, which is not limited herein.
It should be noted that, S1071 and S1072 do not have a sequence, that is, the fabrication of the upper spacer layer may be performed first, and then the evaporation of the reflective film is performed; the vapor deposition of the reflective film may be performed first, and then the spacer layer may be formed, which is not limited herein.
In summary, the present application provides a semiconductor device and a method for fabricating the same, the semiconductor device including: a substrate; the epitaxial layer is positioned on the front side of the substrate and comprises a device region and a spacer region, the spacer region is positioned between two adjacent device regions, a groove is arranged between the device region and the spacer region, and the bottom of the groove is exposed out of the substrate; an APD cell located on the device region; and the electrode is positioned on the back surface of the substrate, wherein the electrode on the back surface of the substrate is provided with an optical window at a position corresponding to the device area. Because the epitaxial layer is arranged in a partitioned mode and the device region is isolated from the spacer region, on one hand, photogenerated carriers cannot transversely move from the device region to the spacer region, so that the photogenerated carriers of two adjacent APD units cannot transversely move, and the electric crosstalk is effectively avoided. On the other hand, when secondary photons are emitted from one APD cell to an adjacent APD cell, the spacer region can play a certain isolation role, so that the problem of optical crosstalk can be effectively improved.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
It will be evident to those skilled in the art that the present application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. A semiconductor device, characterized in that the semiconductor device comprises:
a substrate;
the epitaxial layer is positioned on the front surface of the substrate and comprises a device region and a spacer region, the spacer region is positioned between two adjacent device regions, a groove is arranged between the device region and the spacer region, and the bottom of the groove is exposed out of the substrate;
an APD cell located on the device region; and the number of the first and second groups,
and the electrode is positioned on the back surface of the substrate, and an optical window is arranged at the position, corresponding to the device area, of the electrode on the back surface of the substrate.
2. The semiconductor device of claim 1, further comprising a spacer layer located over the spacer region; wherein,
the surface of the pad up layer is higher than the upper surface of the APD cell.
3. The semiconductor device according to claim 2, wherein the thickness of the pad layer is 2 to 10 μm.
4. The semiconductor device according to claim 2, wherein a material of the pad level layer includes one or a combination of polyimide, benzocyclobutene, silicon oxide, silicon nitride, and metal.
5. The semiconductor device according to claim 1, further comprising a reflective film on a sidewall and a bottom of the trench.
6. The semiconductor device according to claim 5, wherein a thickness of the reflective film is 100 to 1000nm.
7. The semiconductor device according to claim 5, wherein a material of the reflective film comprises Al 2 O 3 、SiO 2 、SiN 2 、Ta 2 O 5 And TiO 2 2 Or a combination thereof.
8. The semiconductor device according to claim 1, wherein a width of the spacer is 1 to 1000 μm.
9. A semiconductor device manufacturing method, characterized by comprising:
providing a substrate;
growing an epitaxial layer along the front surface of the substrate;
etching a groove along the epitaxial layer, and defining a device region and a spacer region through the groove; the groove is positioned between the adjacent device area and the interval area, and the bottom of the groove is exposed out of the substrate;
manufacturing an APD unit along the surface of the device region;
and manufacturing an electrode along the back surface of the substrate, and etching an optical window at the position of the electrode relative to the device region.
10. The method of fabricating a semiconductor device of claim 9, wherein after the steps of etching trenches along the epitaxial layer and defining device and spacer regions by the trenches, the method further comprises:
depositing a spacer layer along the spacer region;
and evaporating a reflecting film along the side wall and the bottom of the groove.
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| CN202210822683.3A CN115172394A (en) | 2022-07-12 | 2022-07-12 | Semiconductor device and manufacturing method thereof |
| PCT/CN2023/106212 WO2024012353A1 (en) | 2022-07-12 | 2023-07-07 | Semiconductor device and manufacturing method therefor |
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| CN202210822683.3A CN115172394A (en) | 2022-07-12 | 2022-07-12 | Semiconductor device and manufacturing method thereof |
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Cited By (1)
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| WO2024012353A1 (en) * | 2022-07-12 | 2024-01-18 | 泉州市三安光通讯科技有限公司 | Semiconductor device and manufacturing method therefor |
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| TWI443817B (en) * | 2006-07-03 | 2014-07-01 | Hamamatsu Photonics Kk | Photodiode array |
| US8279411B2 (en) * | 2008-08-27 | 2012-10-02 | The Boeing Company | Systems and methods for reducing crosstalk in an avalanche photodiode detector array |
| CN109935639B (en) * | 2019-03-15 | 2021-01-08 | 中国科学院半导体研究所 | Single photon detector array capable of reducing electrical crosstalk and preparation method thereof |
| JP7222851B2 (en) * | 2019-08-29 | 2023-02-15 | 株式会社東芝 | Photodetectors, photodetection systems, lidar devices, and vehicles |
| CN217740536U (en) * | 2022-07-12 | 2022-11-04 | 厦门市三安集成电路有限公司 | Semiconductor device and packaging structure thereof |
| CN115172394A (en) * | 2022-07-12 | 2022-10-11 | 厦门市三安集成电路有限公司 | Semiconductor device and manufacturing method thereof |
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| WO2024012353A1 (en) * | 2022-07-12 | 2024-01-18 | 泉州市三安光通讯科技有限公司 | Semiconductor device and manufacturing method therefor |
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