CN115148584A - Substrate material with high quality factor, preparation method and application - Google Patents
Substrate material with high quality factor, preparation method and application Download PDFInfo
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- CN115148584A CN115148584A CN202210793113.6A CN202210793113A CN115148584A CN 115148584 A CN115148584 A CN 115148584A CN 202210793113 A CN202210793113 A CN 202210793113A CN 115148584 A CN115148584 A CN 115148584A
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- 239000000758 substrate Substances 0.000 title claims abstract description 87
- 239000000463 material Substances 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title abstract description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 20
- 150000002500 ions Chemical class 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 239000007767 bonding agent Substances 0.000 claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- -1 argon ions Chemical class 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 3
- 238000013329 compounding Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims 2
- 230000001070 adhesive effect Effects 0.000 claims 2
- 230000008054 signal transmission Effects 0.000 abstract description 12
- 239000002131 composite material Substances 0.000 abstract description 4
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 3
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 238000000498 ball milling Methods 0.000 abstract description 2
- 238000002156 mixing Methods 0.000 abstract description 2
- 230000003068 static effect Effects 0.000 abstract description 2
- 230000035484 reaction time Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- BHZOKUMUHVTPBX-UHFFFAOYSA-M sodium acetic acid acetate Chemical compound [Na+].CC(O)=O.CC([O-])=O BHZOKUMUHVTPBX-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8334—Bonding interfaces of the layer connector
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a substrate material with high quality factor, a preparation method and application thereof, comprising a substrate material substrate, wherein the upper surface of the substrate material substrate is processed by heavy ions to form a polycrystalline silicon layer; and the aluminum nitride layer is subjected to mixing, ball milling, press forming, pre-sintering, cold static pressure sintering and high temperature sintering, the lower surface of the aluminum nitride layer is subjected to heavy ion treatment to form a polycrystalline AlN layer, and the upper surface of the polycrystalline AlN layer is bonded with the polycrystalline AlN layer to form a bonding agent layer. The substrate material can prevent the signal of the composite part of the two materials from being cut off or leaked in the signal transmission process so as to maintain high-quality signal transmission; meanwhile, the two different materials realize signal transmission of different signal wave bands, filter redundant signals, obviously improve the signal transmission quality of devices, improve the quality factor of substrate materials, simplify the process of the preparation method, reduce the power consumption and reduce the environmental pollution caused by using chemical reagents in other processes.
Description
Technical Field
The invention relates to the technical field of electronic materials and communication, in particular to a substrate material with a high quality factor, a preparation method and application thereof.
Background
With the development of thin film and micro-nano manufacturing technology, electronic devices are rapidly developed in the direction of miniaturization, high-density multiplexing, high frequency and low power consumption. The high-integration radio frequency filter chip is an important core component of the current 5G communication mobile phone and has huge market scale. The surface acoustic wave device (SAW) has the advantages of small volume, low cost, high quality factor (Q), strong power bearing capacity, high frequency, compatibility with IC technology and the like, and is expected to play a wide application prospect in a future wireless communication system.
The quality factor in a surface acoustic wave filter (SAW) is an important index for measuring the performance of the filter, and an important component influencing the performance index of the filter is a substrate material. However, in the substrate material, due to the imbalance problem of the substrate material matching with each other, especially the lattice mismatch and thermal mismatch with the AlN film are large, the quality of the prepared crystal is poor, and the subsequent prepared device is adversely affected.
Disclosure of Invention
Aiming at the technical defects, the invention aims to provide a silicon/silicon oxide substrate material substrate and aluminum nitride substrate layer composite material and a preparation method and application thereof, wherein the two materials are matched with each other, so that the signal interception or leakage of the composite part of the two materials can be avoided in the signal transmission process to keep high-quality signal transmission, the problem of technical feasibility of sound wave transmission quality loss is solved, meanwhile, the two different materials realize signal transmission of different signal wave bands, redundant signals are filtered, the signal transmission quality of a device is obviously improved, and the quality factor of the substrate material is improved; the preparation method simplifies the process, reduces the power consumption, reduces the environmental pollution caused by using chemical reagents in other processes, and has important social value.
In order to solve the technical problems, the invention adopts the following technical scheme:
the bonding agent layer is generated on the top of the substrate, so that the resistance can be obviously increased, the quality factor can be improved, and the quality factor of the whole electronic device can be improved by combining the bonding agent layer with aluminum nitride. The quality factor of the material is obviously improved by processing the substrate and the bonding agent layer, then compounding materials with different cut-off frequencies and propagation coefficients and utilizing parameters of the different materials for improving the overall balance.
The invention provides a substrate material with a high quality factor, which comprises a substrate material substrate, wherein a polycrystalline silicon layer is formed on the upper surface of the substrate material substrate through heavy ion treatment; the lower surface of the aluminum nitride layer is subjected to heavy ion treatment to form a polycrystalline AlN layer, and the upper surface of the polycrystalline AlN layer is bonded with the polycrystalline AlN layer.
Further, the substrate material substrate is silicon or silicon oxide.
Further, the thickness of the base material substrate is less than 100 microns.
Further, the heavy ions for processing the substrate material substrate are argon ions, and the heavy ions for processing the aluminum nitride layer are Fe7.
Furthermore, the polycrystalline silicon layer is a polycrystalline silicon layer without impurity introduction, and the thickness of the polycrystalline silicon layer is 1-10 micrometers.
Furthermore, the aluminum nitride layer is high-purity AlN, and the purity reaches 99.9%.
Further, the preparation method of the high-purity AlN aluminum nitride layer comprises the steps of mixing, ball milling, press forming, pre-sintering, cold static pressure sintering and high-temperature sintering.
Further, the thickness of the aluminum nitride layer is 1-10 microns.
Another object of the present invention is to provide a method for preparing a substrate material with a high quality factor, comprising the steps of:
s1, preparing a substrate material substrate, and injecting heavy ions to generate an electrode and a polycrystalline silicon layer on the upper surface of the substrate material substrate;
s2, annealing the substrate material substrate after the injection process in the step S1;
s3, pressing and molding aluminum nitride powder, sintering the aluminum nitride powder at 1600-1700 ℃ to prepare an aluminum nitride layer, and injecting heavy ions to generate a polycrystalline AlN layer on the upper surface of the substrate material substrate;
and S4, forming a bonding agent layer by bonding the prepared silicon substrate and the aluminum nitride layer to realize the compounding of the materials.
Further, the annealing treatment condition is 250-300 ℃, and the heat preservation time is 0.5-3h.
Further, the formation of the aluminum nitride layer is mainly realized by bonding through bonding glue, and the bonding glue is composed of long-chain organic polymers composed of carbon and hydrogen.
The third purpose of the invention is to provide a substrate material with high quality factor for application in the field of acoustic wave filter.
The invention has the beneficial effects that:
1. the substrate material can avoid the signal interception or leakage of the composite part of the two materials in the signal transmission process so as to keep high-quality signal transmission and solve the technical feasibility problem of sound wave transmission quality loss;
2. the substrate material realizes signal transmission of different signal wave bands, filters redundant signals, obviously improves the signal transmission quality of devices and improves the quality factor of the substrate material;
3. the preparation method of the substrate material simplifies the process, reduces the power consumption, reduces the environmental pollution caused by using chemical reagents in other processes, and has important social value.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of a high quality factor substrate material according to an embodiment of the present invention;
description of reference numerals:
1. an aluminum nitride layer; 2. a polycrystalline AlN layer; 3. a bonding agent layer; 4. a polysilicon layer; 5. a base material substrate.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1, a substrate material with a high quality factor, a method for improving the quality factor of an aluminum nitride substrate for an acoustic wave filter in the present embodiment, specifically includes the following steps:
will P>A crystal wafer with a specific resistance of 4K omega is used as a substrate 5 of a base material, the thickness of the carrier is 100um, and the size of the carrier is 5 multiplied by 5m 2 . Argon ions with the energy of 50keV and the reaction time of 5min are implanted into the substrate, and a 10um polysilicon layer 4 is generated on the top of the substrate through diffusion. After the implantation process, the silicon substrate was annealed at 300 ℃ for 3 hours.
The aluminum nitride is mainly high-purity AlN powder, is prepared by pressing, sintering at 1700 ℃ in the atmosphere of heat preservation for 4h, and then cutting and polishing the high-purity aluminum nitride ceramic into 5 multiplied by 5m 2 And a substrate of thickness 10 um.
The polycrystalline AlN layer 2 having a depth of 0.35um was formed by irradiation using heavy ions Fe7, with an energy of Fe7 of 85MeV and an irradiation reaction time of 20 min.
And adding polyacrylic acid acetate between the prepared silicon substrate and the aluminum nitride layer 1, and then realizing bonding at 200 ℃ for 60min to form a bonding agent layer 3, thereby realizing the preparation of the high-quality substrate material.
Example 2
The substrate 5 was made of a silicon oxide substrate, the thickness of the carrier was 50 μm, and the size of the carrier was 10X 10m 2 . Implanting heavy argon ions with an energy of 50keV and a reaction time of 5min into the substrate, and placing the substrate on the substrateThe bottom top portion produces a 10um polysilicon layer 4 by diffusion. After the implantation process, the silicon oxide substrate is annealed at 300 ℃ for 3h.
The aluminum nitride is mainly high-purity AlN powder, is prepared by pressing and molding, sintering at 1700 ℃ in the atmosphere of heat preservation for 4h, and then cutting and polishing the high-purity aluminum nitride ceramic into 5 multiplied by 5m 2 And a substrate of thickness 5 um.
The polycrystalline AlN layer 2 having a depth of 0.5um was formed by irradiation using heavy ions Fe7, with an energy of Fe7 of 85MeV and an irradiation reaction time of 100 min.
And adding polyacrylate into the prepared silicon oxide substrate and the prepared aluminum nitride layer 1, and then realizing bonding at 200 ℃ for 60min to form a bonding agent layer 3, thereby realizing the preparation of the high-quality substrate material.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A high quality factor substrate material comprising
The substrate material substrate, the upper surface of the substrate material substrate forms a polycrystalline silicon layer through heavy ion treatment;
the lower surface of the aluminum nitride layer is subjected to heavy ion treatment to form a polycrystalline AlN layer, and the upper surface of the polycrystalline silicon layer is bonded with the polycrystalline AlN layer.
2. The high quality factor substrate material of claim 1, wherein the base material substrate is silicon or silicon oxide.
3. The high quality factor substrate material of claim 1, wherein the substrate material has a thickness of 0 to 100um.
4. The high quality factor substrate material of claim 1, wherein the heavy ions used to process the substrate material substrate are argon ions and the heavy ions used to process the aluminum nitride layer are Fe7.
5. A high quality factor substrate material according to claim 1, wherein said polysilicon layer is pure polysilicon, said polysilicon layer having a thickness of 1-10 microns.
6. The high quality factor substrate material of claim 1, wherein the aluminum nitride layer comprises high purity AlN with a purity of 99.9%, and the aluminum nitride layer has a thickness of 1-10 μm.
7. A method of preparing a high quality factor substrate material as claimed in claim 1, comprising the steps of:
s1, preparing a substrate material substrate, and injecting heavy ions to generate an electrode and a polycrystalline silicon layer on the upper surface of the substrate material substrate;
s2, after the injection process in the step S1, annealing the substrate material substrate;
s3, pressing and molding aluminum nitride powder, and sintering at 1600-1700 ℃ in an atmosphere of heat preservation for 3-5 h to prepare an aluminum nitride layer;
and S4, bonding the prepared silicon substrate and the aluminum nitride layer to form a bonding agent layer so as to realize the compounding of the material.
8. The method for preparing a high-Q substrate material according to claim 7, wherein the annealing conditions are 250-300 ℃ and the holding time is 0.5-3h.
9. The method according to claim 7, wherein the forming of the aluminum nitride layer is performed by bonding with a bonding adhesive, and the bonding adhesive is a long-chain organic polymer comprising carbon and hydrogen.
10. Use of a high quality factor substrate material according to any one of claims 1 to 9 in the field of acoustic wave filters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210793113.6A CN115148584A (en) | 2022-07-05 | 2022-07-05 | Substrate material with high quality factor, preparation method and application |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210793113.6A CN115148584A (en) | 2022-07-05 | 2022-07-05 | Substrate material with high quality factor, preparation method and application |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116874310A (en) * | 2023-05-29 | 2023-10-13 | 苏州璋驰光电科技有限公司 | Interface bonding material, preparation method and application thereof |
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| US20020096106A1 (en) * | 2001-01-19 | 2002-07-25 | Kub Francis J. | Electronic device with composite substrate |
| US20040009649A1 (en) * | 2002-07-12 | 2004-01-15 | Kub Francis J. | Wafer bonding of thinned electronic materials and circuits to high performance substrates |
| US20050269671A1 (en) * | 2004-06-03 | 2005-12-08 | Bruce Faure | Support for hybrid epitaxy and method of fabrication |
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| KR20090106112A (en) * | 2008-04-04 | 2009-10-08 | 울산대학교 산학협력단 | Depostion of polycrystalline AlN films on 3C-SiC buffer layers for MEMS or NEMS applications |
| US20160358828A1 (en) * | 2014-02-18 | 2016-12-08 | Ngk Insulators, Ltd. | Handle Substrate of Composite Substrate for Semiconductor, and Composite Substrate for Semiconductor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116874310A (en) * | 2023-05-29 | 2023-10-13 | 苏州璋驰光电科技有限公司 | Interface bonding material, preparation method and application thereof |
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