CN115117266A

CN115117266A - Light emitting diode, backlight module and display device

Info

Publication number: CN115117266A
Application number: CN202210720737.5A
Authority: CN
Inventors: 卓恩宗; 夏玉明; 杨凤云; 李荣荣
Original assignee: HKC Co Ltd
Current assignee: HKC Co Ltd
Priority date: 2022-06-23
Filing date: 2022-06-23
Publication date: 2022-09-27

Abstract

The application provides a light emitting diode, backlight unit and display device, light emitting diode includes first doping layer, quantum well layer and second doping layer, the quantum well layer is located first doping layer with between the second doping layer, the quantum well layer includes first quantum well layer and the second quantum well layer of range upon range of setting, the luminous colour of first quantum well layer with the luminous colour of second quantum well layer is different. According to the technical scheme, the display brightness of the electronic product can be improved, so that the electronic product can adapt to more use scenes.

Description

Light emitting diode, backlight module and display device

Technical Field

The application relates to the field of electronics, especially, relate to a light emitting diode, backlight unit and display device.

Background

With the continuous development of electronic devices, people have higher and higher requirements on the screen display effect of the electronic devices. Since light emitting diodes have many advantages such as self-light emission, high efficiency, long life, and ultrahigh resolution, display devices typified by light emitting diodes are gradually coming into the field of view of the public.

At present, when the light emitting diode is used as the backlight of a display device, the problem that the light emitting brightness of the light emitting diode is insufficient exists, so that the use scene of the electronic equipment under strong light is limited.

Disclosure of Invention

The embodiment of the application provides a light emitting diode, a backlight module and a display device, which can improve the display brightness of an electronic product, so that the electronic product can adapt to more use scenes.

In a first aspect, the present application provides a light emitting diode, including a first doping layer, a quantum well layer and a second doping layer, wherein the quantum well layer is located between the first doping layer and the second doping layer, the quantum well layer includes a first quantum well layer and a second quantum well layer which are stacked, and a light emitting color of the first quantum well layer is different from a light emitting color of the second quantum well layer.

It can be understood that, by enabling the quantum well layer to emit light rays with two different wavelengths simultaneously, the light emitting efficiency of the light emitting diode can be improved, so that the light emitting diode can be used in more use scenes.

In one possible embodiment, the first quantum well layer and the second quantum well layer are sequentially arranged along a first direction, or the first quantum well layer and the second quantum well layer are sequentially arranged along a second direction, wherein the first direction is a direction parallel to the first doping layer, and the second direction is a direction perpendicular to the first doping layer.

In one possible embodiment, the number of the first quantum well layers is two, and the number of the second quantum well layers is one;

two first quantum well layers are separated by one second quantum well layer, or the two first quantum well layers and the one second quantum well layer are sequentially stacked.

In one possible embodiment, the number of the first quantum well layer is one, the number of the second quantum well layer is one, one end of the first quantum well layer is connected to the first doping layer, the other end of the first quantum well layer is connected to the second doping layer, one end of the second quantum well layer is connected to the first doping layer, and the other end of the second quantum well layer is connected to the second doping layer.

In one possible embodiment, the color of the light emitted by the first quantum well layer is blue, and the color of the light emitted by the second quantum well layer is green.

In one possible embodiment, the light emitting color of the first quantum well layer is a first light emitting color, the light emitting color of the second quantum well layer is a second light emitting color, and the light emitting diode further includes a color conversion layer disposed on a side of the second doping layer away from the quantum well layer, the color conversion layer being capable of converting the first light emitting color and the second light emitting color into a third light emitting color.

In one possible embodiment, the light emitting color of the first quantum well layer is a first light emitting color, the light emitting color of the second quantum well layer is a second light emitting color, and the light emitting diode further includes a color conversion layer disposed on a side of the second doping layer away from the quantum well layer, the color conversion layer being capable of converting the first light emitting color into the second light emitting color.

In a possible implementation manner, the quantum well device further comprises a filter layer connected to one side, away from the quantum well layer, of the second doping layer;

the filter layer is used for enabling the light emitting color of the light emitting diode to be the same as the light emitting color of the first quantum well layer; or the filter layer is used for enabling the light emitting color of the light emitting diode to be the same as the light emitting color of the second quantum well layer.

In a second aspect, the present application provides a backlight module, which includes a substrate and a plurality of leds disposed on the substrate, wherein the plurality of led arrays are arranged on the substrate.

In a third aspect, the present application provides a display device, comprising a housing and the backlight module as described above, wherein the backlight module is connected to the housing.

Drawings

In order to more clearly illustrate the technical solution of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic structural diagram of a display device provided in an embodiment of the present application;

FIG. 2 is a schematic view of a portion of the structure of a light emitting assembly shown in FIG. 1;

FIG. 3 is a schematic diagram of a structure of a first embodiment of a quantum well layer of the light emitting diode shown in FIG. 2;

FIG. 4 is a schematic diagram of a structure of a second embodiment of a quantum well layer of the light emitting diode shown in FIG. 2;

FIG. 5 is another schematic structural view of a second embodiment of a quantum well layer of the light emitting diode shown in FIG. 2;

FIG. 6 is a schematic diagram of yet another structure of a second embodiment of a quantum well layer of the light emitting diode shown in FIG. 2;

FIG. 7 is a schematic diagram of a third embodiment of a quantum well layer of the light emitting diode shown in FIG. 2;

fig. 8 is another schematic structural view of a third embodiment of a quantum well layer of the light emitting diode shown in fig. 2;

fig. 9 is a schematic diagram of a structure of a fourth embodiment of a quantum well layer of the light emitting diode shown in fig. 2;

fig. 10 is a schematic diagram of a fifth embodiment of a quantum well layer of the light emitting diode shown in fig. 2;

fig. 11 is another schematic structural view of the fifth embodiment of the quantum well layer of the light emitting diode shown in fig. 2;

FIG. 12 is a schematic diagram of yet another structure of a fifth embodiment of a quantum well layer of the light emitting diode shown in FIG. 2;

fig. 13 is a schematic structural view of a sixth embodiment of a quantum well layer of the light emitting diode shown in fig. 2;

fig. 14 is another schematic structural view of the sixth embodiment of the quantum well layer of the light emitting diode shown in fig. 2;

fig. 15 is a schematic partial structure diagram of another light emitting device provided in this embodiment.

Description of reference numerals: the display device comprises a display device-1000, a shell-1001, a driving component-100, a light emitting component-200, a substrate-210, a light emitting diode-220, a light shielding layer-230, a quantum well layer-222, a first doping layer-221, a second doping layer-223, a conducting layer-224, a color conversion layer-225, an electrode-226, a filter layer-227, a first quantum well layer-2221, a second quantum well layer-2222, a first electrode-2261, a second electrode-2262, a red conversion layer-2251, a green conversion layer-2252, a red filter layer-2271, a green filter layer-2272 and a blue filter layer-2273.

Detailed Description

For convenience of understanding, terms referred to in the embodiments of the present application are first explained.

And/or: only one kind of association relationship describing the associated object, indicates that there may be three kinds of relationships, for example, a and/or B, may indicate: a exists alone, A and B exist simultaneously, and B exists alone.

A plurality of: two or more than two.

Connecting: it should be understood that, for example, A and B are connected, either directly or indirectly through an intermediate.

The following description of the embodiments of the present application will be made with reference to the accompanying drawings.

Based on this, the application provides a light emitting diode, backlight unit and display device, can improve the display brightness of electronic product to make electronic product can adapt to more use scenes.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a display device 1000 according to an embodiment of the present disclosure. The display device 1000 may include a housing 1001 and a backlight module (not shown) connected to the housing 1001. The backlight module includes a driving assembly 100 and a light emitting assembly 200. The driving element 100 is electrically connected to the light emitting element 200, the driving element 100 drives the light emitting element 200 to emit light, and the light emitting element 200 is used for providing backlight for the display device 1000. Illustratively, the driving element 100 may be a Thin-film transistor (TFT). The thin film transistors can control the color temperature of the light emitting device 200 in different regions and the overall display brightness, so that the display device 1000 can be suitable for more scenes.

It should be noted that fig. 1 is only for schematically describing the connection relationship among the housing 1001, the driving module 100 and the light emitting module 200, and the connection position, the specific structure and the number of the devices are not specifically limited. The structure illustrated in the embodiment of the present application is not particularly limited to the display device 1000. In other embodiments of the present application, the display device 1000 may include more or fewer components than shown, or some components may be combined, some components may be split, or a different arrangement of components. The illustrated components may be implemented in hardware, software, or a combination of software and hardware.

Referring to fig. 2, fig. 2 is a schematic structural diagram of a portion of the light emitting device 200 shown in fig. 1. The light emitting device 200 may include a substrate 210, a plurality of light emitting diodes 220, and a light shielding layer 230. The plurality of leds 220 are arranged in an array on the substrate 210. The light-shielding layer 230 is connected to the substrate 210 and fills gaps between the plurality of light-emitting diodes 220.

Illustratively, the substrate 210 may be a sapphire substrate or a silicon wafer substrate. Alternatively, the substrate 210 may be a flexible substrate, and the flexible substrate may be made of any one or more of the following materials: polyimide, Polyethylene terephthalate (PET), Polyethylene naphthalate (PEN), Cyclic Olefin Polymer (COP), Polycarbonate (PC), Polystyrene (PS), Polypropylene (PP), Polytetrafluoroethylene (PTFE). In other implementations, the substrate 210 may also be made of glass, ceramic, or the like, which is not limited in this application.

Each of the light emitting diodes 220 may emit red, green, or blue light, and one light emitting diode 220 emitting red light, one light emitting diode 220 emitting green light, and one light emitting diode 220 emitting blue light, which are adjacent to each other, may constitute one light emitting unit, so that the plurality of light emitting diodes 220 may constitute a plurality of light emitting units, and fig. 2 only illustrates one light emitting unit, but it should be understood that the invention is not limited thereto.

In the embodiment of the present application, the Light Emitting Diode 220 is illustrated as a Micro Light Emitting Diode (Micro LED), but it is understood that in other embodiments, the Light Emitting Diode 220 can include other Light Emitting devices, such as a Mini Light Emitting Diode (Mini LED) and an Organic Light Emitting Diode (OLED), and the present application is not limited thereto.

The following will describe a specific structure of the light emitting diode 220 provided in the embodiments of the present application by taking one light emitting diode 220 as an example, and the modifications made to the light emitting diode 220 can be applied to other light emitting diodes without conflict.

Referring to fig. 3, fig. 3 is a schematic structural diagram of a quantum well layer 222 of the light emitting diode 220 shown in fig. 2 according to a first embodiment. The light emitting diode 220 may include a first doping layer 221, a quantum well layer 222, a second doping layer 223, a conductive layer 224, a color conversion layer 225, an electrode 226, and a filter layer 227.

The first doping layer 221 is disposed on the surface of the substrate 210. Illustratively, the first doped layer may be doped with N-type gallium nitride.

The quantum well layer 222 is disposed on a surface of the first doping layer 221 facing away from the substrate 210. The quantum well layer 222 includes a first quantum well layer 2221 and a second quantum well layer 2222 that are arranged in a layer-by-layer manner, and the light emission color of the first quantum well layer 2221 is different from the light emission color of the second quantum well layer 2222. In an embodiment of the present application, the light emission color of the first quantum well layer 2221 may be blue, and the light emission color of the second quantum well layer 2222 may be green.

The second doping layer 223 is provided on the surface of the quantum well layer 222 away from the first doping layer 221. Illustratively, the second doped layer may be doped with P-type gallium nitride.

It is understood that the first doping layer 221 and the second doping layer 223 after doping the gallium nitride have majority carriers (majority carriers of the first doping layer 221 may be electrons, and majority carriers of the second doping layer 223 may be holes). During the light emitting process of the light emitting diode 220 of the light emitting device 200, the driving device 100 applies a voltage across the light emitting diode 220. Current flows from the second doping layer 223 to the first doping layer 221, and passes through the quantum well layer 222. The second doping layer 223 outputs electrons to the quantum well layer 222. The first doping layer 221 absorbs electrons transferred from the quantum well layer 222 (this can be regarded as the first doping layer 221 outputting holes to the quantum well layer 222, and the effects of both are equal). In the quantum well layer 222, electrons are combined with holes. When an electron encounters a hole, it fills the hole, and when this occurs, the electron releases energy in the form of a photon, causing the display device 1000 to emit light.

There may be two electrodes 226, namely a first electrode 2261 and a second electrode 2262, where the first electrode 2261 is connected to the surface of the first doping layer 221 away from the substrate 210, and the second electrode 2262 is connected to the side of the second doping layer 223 away from the quantum well layer 222. The first electrode 2261 serves as an electrical connection pin of the first doped layer 221, and the first electrode 2261 electrically connects the first doped layer 221 and the driving assembly 100. The second electrode 2262 serves as an electrical connection pin for the second doped layer 223, and the second electrode 2262 electrically connects the second doped layer 223 and the driving assembly 100.

The conductive layer 224 may be disposed between the second electrode 2262 and the second doped layer 223. It is understood that the provision of the conductive layer 224 may improve the stability of the electrical connection of the second electrode 2262 with the second doped layer 223.

Based on the above description regarding the light emitting diode 220, it should be understood that the quantum well layer 222 is located between the first doping layer 221 and the second doping layer 223. In the embodiment of the application, the quantum well layer 222 of one light emitting diode 220 includes the first quantum well layer 2221 and the second quantum well layer 2222 with different light emitting colors, so that the quantum well layer 222 can emit light with two different wavelengths simultaneously when emitting light, thereby improving the light emitting brightness of the light emitting diode 220. The number and arrangement of the first and second quantum well layers 2221 and 2222 will be described in more detail in the following embodiments. Among them, the number of the first quantum well layers 2221 may be one or more, and the number of the second quantum well layers 2222 may be one or more.

In a first possible embodiment, referring again to fig. 3, the quantum well layer 222 includes a first quantum well layer 2221 and a second quantum well layer 2222. One first quantum well layer 2221 and one second quantum well layer 2222 are arranged in this order along the first direction X. One end of the first quantum well layer 2221 is connected to the first doping layer 221, and the other end of the first quantum well layer 2221 is connected to the second doping layer 223. One end of the second quantum well layer 2222 is connected to the first doping layer 221, and the other end of the second quantum well layer 2222 is connected to the second doping layer 223. The thickness of the first quantum well layer 2221 and the thickness of the second quantum well layer 2222 are the same (the thickness direction is the second direction Y, i.e. the direction perpendicular to the first doping layer 221, and the second direction Y is perpendicular to the first direction X), and the ratio of the volume of the first quantum well layer 2221 to the volume of the second quantum well layer 2222 may be 2:1 (allowable tolerance range).

It can be understood that, since the light emitting color of the first quantum well layer 2221 is blue, the light emitting color of the second quantum well layer 2222 is green, and the light emitting efficiency of the blue quantum well layer 222 is lower than that of the green quantum well layer 222, by setting the volume of the blue quantum well layer 222 to be larger than that of the green quantum well layer 222, the shortage of the light emitting efficiency of the blue quantum well layer 222 can be compensated, thereby improving the luminance of the light emitting diode 220.

In a second possible embodiment, the quantum well layer 222 includes two first quantum well layers 2221 and one second quantum well layer 2222. Two first quantum well layers 2221 and one second quantum well layer 2222 are arranged along the second direction Y.

In a specific application scenario, referring to fig. 4, fig. 4 is a schematic structural diagram of a second embodiment of a quantum well layer 222 of the light emitting diode 220 shown in fig. 2. One first quantum well layer 2221 connects the surface of the first doping layer 221 away from the substrate 210, one second quantum well layer 2222 connects the surface of the second doping layer 223 away from the conductive layer 224, and the other second quantum well layer 2222 connects between the one second quantum well layer 2222 and the one first quantum well layer 2221. That is, the first doping layer 221, one first quantum well layer 2221, the other first quantum well layer 2221, the second quantum well layer 2222, and the second doping layer 223 are sequentially stacked.

In another specific application scenario, referring to fig. 5, fig. 5 is another schematic structural diagram of the second embodiment of the quantum well layer 222 of the light emitting diode 220 shown in fig. 2. In this application scenario, one first quantum well layer 2221 is connected to second doping layer 223, one second quantum well layer 2222 is connected to first doping layer 221, and another second quantum well layer 2222 is connected between one second quantum well layer 2222 and one first quantum well layer 2221. That is, the first doping layer 221, the second quantum well layer 2222, one first quantum well layer 2221, the other first quantum well layer 2221, and the second doping layer 223 are sequentially stacked.

In another specific application scenario, referring to fig. 6, fig. 6 is another schematic structural diagram of the second embodiment of the quantum well layer 222 of the light emitting diode 220 shown in fig. 2. One first quantum well layer 2221 is connected to the first doping layer 221, the other first quantum well layer 2221 is connected to the second doping layer 223, and the two first quantum well layers 2221 are separated by one second quantum well layer 2222. That is, the first doping layer 221, one first quantum well layer 2221, the second quantum well layer 2222, the other first quantum well layer 2221, and the second doping layer 223 are sequentially stacked.

In a third possible embodiment, the quantum well layer 222 includes two first quantum well layers 2221 and two second quantum well layers 2222, and the two first quantum well layers 2221 and the two second quantum well layers 2222 are arranged along the second direction Y.

In a specific application scenario, referring to fig. 7, fig. 7 is a schematic structural diagram of a third embodiment of a quantum well layer 222 of the light emitting diode 220 shown in fig. 2. Two first quantum well layers 2221 and two second quantum well layers 2222 are sequentially stacked. One first quantum well layer 2221 is connected to the first doping layer 221, one second quantum well layer 2222 is connected to the second doping layer 223, the other first quantum well layer 2221 is connected between the one first quantum well layer 2221 and the other second quantum well layer 2222, and the surface of the other second quantum well layer 2222 remote from the other first quantum well layer 2221 is connected to the one second quantum well layer 2222; alternatively, one first quantum well layer 2221 is connected to the second doping layer 223, one second quantum well layer 2222 is connected to the first doping layer 221, another first quantum well layer 2221 is disposed between the one first quantum well layer 2221 and another second quantum well layer 2222, and the surface of the another second quantum well layer 2222 away from the another first quantum well layer 2221 is connected to the one second quantum well layer 2222.

In another specific application scenario, referring to fig. 8, fig. 8 is another schematic structural diagram of a third embodiment of a quantum well layer 222 of the light emitting diode 220 shown in fig. 2. One first quantum well layer 2221, one second quantum well layer 2222, the other first quantum well layer 2221, and the other second quantum well layer 2222 are sequentially stacked. One first quantum well layer 2221 may be connected to the first doping layer 221, and one second quantum well layer 2222 is connected to the second doping layer 223; alternatively, one first quantum well layer 2221 may be connected to the second doping layer 223 and one second quantum well layer 2222 is connected to the first doping layer 221.

In this embodiment, it should be noted that the ratio of the total thickness of the two first quantum well layers 2221 to the total thickness of the two second quantum well layers 2222 may be 1:2 (allowable tolerance range). It can be understood that, since the light emitting efficiency of the blue quantum well layer 222 is lower than that of the green quantum well layer 222, by setting the thickness of the blue quantum well layer 222 to be greater than that of the green quantum well layer 222, the deficiency of the light emitting efficiency of the blue quantum well layer 222 can be made up, thereby improving the luminance of the light emitting diode 220.

In a fourth possible embodiment, referring to fig. 9, fig. 9 is a schematic structural diagram of a fourth embodiment of the quantum well layer 222 of the light emitting diode 220 shown in fig. 2, wherein the quantum well layer 222 includes three first quantum well layers 2221 and one second quantum well layer 2222. Three first quantum well layers 2221 and one second quantum well layer 2222 are stacked on the first doping layer 221. The ratio of the total thickness of the three first quantum well layers 2221 to the thickness of the one second quantum well layer 2222 may be 2: 1. The combination sequence in fig. 9 is only an illustration, and the arrangement sequence of the three first quantum well layers 2221 and the one second quantum well layer 2222 may be any arrangement combination, which is not strictly limited in this application.

In a fifth possible implementation, the quantum well layer 222 includes three first quantum well layers 2221 and two second quantum well layers 2222. Three first quantum well layers 2221 and two second quantum well layers 2222 are arranged along the second direction Y. Wherein a ratio of a total thickness of the first quantum well layer 2221 to a total thickness of the second quantum well layer 2222 may be 2: 1.

In a specific application scenario, referring to fig. 10, fig. 10 is a schematic structural diagram of a fifth embodiment of a quantum well layer 222 of the light emitting diode 220 shown in fig. 2. Three first quantum well layers 2221 and two second quantum well layers 2222 may be sequentially stacked, and one first quantum well layer 2221 may be connected to the surface of first doping layer 221 away from substrate 210, and one second quantum well layer 2222 may be connected to the surface of second doping layer 223 away from conductive layer 224.

In another specific application scenario, referring to fig. 11, fig. 11 is another schematic structural diagram of a fifth embodiment of a quantum well layer 222 of the light emitting diode 220 shown in fig. 2. One second quantum well layer 2222, three first quantum well layers 2221, and one second quantum well layer 2222 are sequentially stacked on the surface of the first doping layer 221 away from the substrate 210.

In another specific application scenario, referring to fig. 12, fig. 12 is a schematic structural diagram of a fifth embodiment of a quantum well layer 222 of the light emitting diode 220 shown in fig. 2. Every two first quantum well layers 2221 are spaced apart by one second quantum well layer 2222, and one first quantum well layer 2221 is connected to first doping layer 221 and the other first quantum well layer 2221 is connected to second doping layer 223.

In the embodiments of the present application, the stacking order of the three first quantum well layers 2221 and the two second quantum well layers 2222 is not limited to the order shown in fig. 10 to 12, and the stacking order may be any combination of arrangements, and the stacking order of the first quantum well layers 2221 and the second quantum well layers 2222 is not limited in the present application.

In a sixth possible embodiment, the quantum well layer 222 includes four first quantum well layers 2221 and two second quantum well layers 2222, and the four first quantum well layers 2221 and the two second quantum well layers 2222 are arranged along the second direction Y.

In a specific application scenario, referring to fig. 13, fig. 13 is a schematic structural diagram of a sixth embodiment of a quantum well layer 222 of the light emitting diode 220 shown in fig. 2. Two first quantum well layers 2221, two second quantum well layers 2222, and two other first quantum well layers 2221 are sequentially stacked and provided on the surface of the first doping layer 221 away from the substrate 210.

In another specific application scenario, referring to fig. 14, fig. 14 is another schematic structural diagram of a sixth embodiment of a quantum well layer 222 of the light emitting diode 220 shown in fig. 2. Four first quantum well layers 2221 and two second quantum well layers 2222 may be sequentially stacked and disposed on the surface of the first doping layer 221 away from the substrate 210.

In this embodiment, the order of stacking the four first quantum well layers 2221 and the two second quantum well layers 2222 may be any other arrangement combination, and the present application is not limited thereto. The thicknesses of the first and second quantum well layers 2221 and 2222 may be the same, such that the ratio of the total thickness of the four first quantum well layers 2221 to the total thickness of the two second quantum well layers 2222 is 2:1 (allowable tolerance range).

The thicknesses of the first quantum well layer 2221 and the second quantum well layer 2222 may also be different. For example, the ratio of the thicknesses of the four blue quantum well layers 222 (first quantum well layers 2221) may be 1:1:2:2 (allowable tolerance range), the ratio of the thicknesses of the two green quantum well layers 222 (second quantum well layers 2222) may be 1:2 (allowable tolerance range), and the ratio of the total thickness of the four first quantum well layers 22212 to the total thickness of the two second quantum well layers 2222 may be 2:1 (allowable tolerance range).

In the embodiment of the present application, by setting the quantum well layer 222 of the light emitting diode 220 to emit light of two colors, that is, blue light and green light (where the wavelength range of the blue light is 450nm to 480nm (the wavelength may vary in a small range), and the wavelength range of the green light is 500nm to 560nm (the wavelength may vary in a small range)), one light emitting diode 220 can emit two light waves at the same time, and the two light waves can be used to simultaneously excite the color conversion layer 225 to emit light. This application uses dual wavelength to arouse colour conversion layer 225, can improve the luminous efficiency of colour conversion layer 225, improves the luminance of the light that colour conversion layer 225 sent to improve the luminous luminance of light emitting component 200, the promotion of light emitting component 200 luminance can make electronic equipment can provide clear image for the user under the highlight, thereby promote user's use and experience, and make electronic equipment can be applicable to more use scenes.

Referring to fig. 2 again, the color conversion layer 225 is disposed on a side of the second doping layer 223 away from the quantum well layer 222. Specifically, the color conversion layer 225 may be directly connected to a surface of the conductive layer 224 away from the second doping layer 223. In fig. 2, the left light emitting diode 220 can emit red light, the middle light emitting diode 220 can emit green light, and the right light emitting diode 220 can emit blue light.

In one possible embodiment, referring to fig. 2 again, as the left light emitting diode 220 in fig. 2, the light emitting color of the first quantum well layer 2221 can be a first light emitting color (the first light emitting color can be blue in this application), the light emitting color of the second quantum well layer 2222 can be a second light emitting color (the second light emitting color can be green in this application), the color conversion layer 225 includes a red conversion layer 2251, and the red conversion layer 2251 can convert the first light emitting color and the second light emitting color into a third light emitting color (the third light emitting color can be red in this application). The red conversion layer 2251 is connected to the second doping layer 223 on a side away from the quantum well layer 222. The red conversion layer 2251 may completely cover the second doping layer 223 of the light emitting diode 220, so that the light emitted from the quantum well layer 222 may be completely received by the red conversion layer 2251, and the light emitted from the quantum well layer 222 may be completely converted into red light.

In another possible implementation manner, please refer to fig. 15, wherein fig. 15 is a partial structural schematic diagram of another light emitting assembly 200 provided in an embodiment of the present application. In fig. 15, the left light emitting diode 220 can emit red light, the middle light emitting diode 220 can emit green light, and the right light emitting diode 220 can emit blue light.

As shown in the left light emitting diode 220 and the middle light emitting diode 220 in fig. 15, the light emitting assembly 200 may include two color conversion layers 225, a red conversion layer 2251 (the red conversion layer 2251 is included in the left light emitting diode 220 in fig. 15) and a green conversion layer 2252 (the green conversion layer 2252 is included in the middle light emitting diode 220 in fig. 15), respectively. The green conversion layer 2252 can convert a first emission color (which may be blue in this application) into a second emission color (which may be green in this application), that is, the green conversion layer 2252 can convert blue light emitted from the first quantum well layer 2221 into green light. The green conversion layer 2252 may also completely cover the second doping layer 223 so that the light emitted from the light emitting diode 220 can be completely received by the green conversion layer 2252, and thus the green conversion layer 2252 completely converts the light emitted from the light emitting diode 220 into green light.

It should be noted that, since the quantum well layer 222 can emit blue light and green light, only the red conversion layer 2251 can be disposed, so that the led 220 can excite the red conversion layer 2251 to emit red light. The red light, the green light and the blue light can be matched to form a light-emitting unit so as to realize full-color display of the electronic equipment.

The red and

green conversion layers

2251, 2252 of the present application may be quantum dot color conversion layers, with the red conversion layer 2251 comprising red quantum dots and the green conversion layer 2252 comprising green quantum dots.

It can be understood that the particle size of the quantum dots is generally between 1 nm and 10 nm. The quantum dots can have electroluminescent and photoluminescent effects. The quantum dots can emit light after being excited, and the luminescent color is determined by materials and sizes. Therefore, the light-emitting wavelength of the quantum dots can be changed by regulating the particle size of the quantum dots. When the particle size of the quantum dot is smaller, the emission color is more blue. When the particle size of the quantum dot is larger, the emission color is more red. The emission color of the quantum dots may cover the entire visible region from blue to red. The quantum dots have the characteristics of high light absorption and light emitting efficiency, narrow full width at half maximum, wide absorption spectrum and the like, so that the quantum dots have high color purity and saturation.

In the embodiment of the application, the filter layer 227 may be disposed on a side of the color conversion layer 225 away from the conductive layer 224; alternatively, the filter layer 227 may be disposed on the surface of the conductive layer 224 away from the second doping layer 223. The filter layer 227 may allow light of one color to pass through while blocking light of other colors from passing through. The filter layer 227 may serve to purify the color of light.

In the first embodiment, referring to fig. 2, the filter layers 227 can be three, which are a red filter layer 2271, a green filter layer 2272, and a blue filter layer 2273. The red filter layer 2271, the green filter layer 2272, and the blue filter layer 2273 are disposed at intervals, and the red filter layer 2271, the green filter layer 2272, and the blue filter layer 2273 are arranged in an array.

When the color conversion layer 225 of the light emitting device 200 only has the red conversion layer 2251 and the green conversion layer 2252 is not disposed, the red filter layer 2271 is disposed on a side of the red conversion layer 2251 away from the second doping layer 223, and the red filter layer 2271 can completely cover a surface of the red conversion layer 2251 away from the second doping layer 223, so that light emitted from the red conversion layer 2251 can completely pass through the filter layer 227, thereby purifying the light emitted from the red conversion layer 2251.

As shown in the middle light emitting diode 220 of fig. 2, the green filter layer 2272 is connected to the side of the second doping layer 223 away from the quantum well layer 222, and the green filter layer 2272 may be directly connected to the surface of the conductive layer 224 away from the second doping layer 223. The green filter layer 2272 may completely cover the surface of the second doping layer 223 far from the quantum well layer 222, so that the light emitted from the light emitting diode 220 completely passes through the green filter layer 2272.

As shown in the light emitting diode 220 on the right of fig. 2, the blue filter layer 2273 is connected to the second doping layer 223 at a side away from the quantum well layer 222, and the blue filter layer 2273 may be directly connected to a surface of the conductive layer 224 away from the second doping layer 223. The blue filter layer 2273 may completely cover the surface of the second doping layer 223 far from the quantum well layer 222, so that the light emitted from the quantum well layer 222 completely passes through the blue filter layer 2273.

Among them, the blue filter layer 2273 is used to make the light emitting color of the light emitting diode 220 the same as the light emitting color of the first quantum well layer 2221, and the green filter layer 2272 is used to make the light emitting color of the light emitting diode 220 the same as the light emitting color of the second quantum well layer 2222.

It is understood that the red filter layer 2271 may purify the light emitted from the red conversion layer 2251 again, so that the purity of the red light is higher. The green filter layer 2272 may block blue light emitted from the quantum well layer 222, and the green filter layer 2272 may pass only green light. Similar to the green filter 2272, the blue filter 2273 may block green light emitted from the light emitting diode 220, and the blue filter 2273 may pass only blue light. The color conversion layer 225 and the filter layer 227 convert and filter the color of the light, so that the light emitting device 200 can emit red, blue and green light at the same time, and the light emitting device 200 can display in full color.

It should be noted that the red filter layer 2271 is to purify the light emitted from the red conversion layer 2251 again, and the red filter layer 2271 may not be provided in the present application, and only the red conversion layer 2251 may be used to emit red light.

In the second embodiment, please refer to fig. 15, which is different from the first embodiment, the light emitting device 200 is provided with a red conversion layer 2251 and a green conversion layer 2252 at the same time, in which case the green filter layer 2272 is disposed on the side of the green conversion layer 2252 away from the second doping layer 223, and the green filter layer 2272 can completely cover the surface of the green conversion layer 2252 away from the second doping layer 223, so that the light emitted from the green conversion layer 2252 can completely pass through the filter layer 227, thereby purifying the light emitted from the green conversion layer 2252. Similar to the function of the red filter 2271, the green filter 2272 can purify the green light again from the green conversion layer 2252 in this embodiment, so that the purity of the green light is higher.

Similar to the function of the red filter 2271, the purpose of the green filter 2272 is to purify the light emitted from the green conversion layer 2252, and the green filter 2272 may not be provided in this embodiment.

The light-shielding layer 230 may be connected to the substrate 210 and fill gaps between the plurality of light-emitting diodes 220. The surface of the light-shielding layer 230 away from the substrate 210 may be flush with the conductive layer 224 or slightly beyond the conductive layer 224, and the surface of the light-shielding layer 230 away from the substrate 210 is not covered with the color conversion layer 225 and/or the filter layer 227.

It is understood that the light shielding layer 230 may encapsulate the light emitting device 200 and/or the driving device 100, and isolate the light emitting device 200 and/or the components in the driving device 100 from moisture and oxygen, so as to prevent the light emitting device 200 and/or the driving device 100 from moisture and oxygen. The light-shielding layer 230 fills the gaps between the light-emitting diodes 220 and can also planarize the device, so that the surface of the light-emitting assembly 200 is smooth. The light-shielding layer 230 may also provide a supporting force for the light-emitting diodes 220, so that the positions of the light-emitting diodes 220 are relatively fixed, and the structural strength of the light-emitting assembly 200 is improved. Meanwhile, the light-shielding layer 230 can shield the circumferential surface of the light-emitting diode 220 (the circumferential surface is a surface parallel to the stacking direction of the first doping layer 221, the quantum well layer 222, and the second doping layer 223), so that the light of the light-emitting device 200 can be emitted to the color conversion layer 225 or the filter layer 227 without being emitted from the circumferential surface of the light-emitting diode 220, and the color of the light-emitting diode 220 can be better purified.

The foregoing detailed description of the embodiments of the present application has been presented to illustrate the principles and implementations of the present application, and the above description of the embodiments is only provided to help understand the method and the core concept of the present application; meanwhile, for a person skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims

1. A light emitting diode comprising a first doping layer, a quantum well layer and a second doping layer, wherein the quantum well layer is located between the first doping layer and the second doping layer, the quantum well layer comprises a first quantum well layer and a second quantum well layer which are arranged in a stacked manner, and the light emission color of the first quantum well layer is different from the light emission color of the second quantum well layer.

2. The led of claim 1, wherein the first and second quantum well layers are sequentially arranged along a first direction, or wherein the first and second quantum well layers are sequentially arranged along a second direction, wherein the first direction is parallel to the first doping layer and the second direction is perpendicular to the first doping layer.

3. The light emitting diode of claim 1, wherein the first quantum well layers are two in number and the second quantum well layers are one in number;

4. The light-emitting diode according to claim 1, wherein the first quantum well layer is one in number, the second quantum well layer is one in number, one end of the first quantum well layer is connected to the first doping layer, the other end of the first quantum well layer is connected to the second doping layer, one end of the second quantum well layer is connected to the first doping layer, and the other end of the second quantum well layer is connected to the second doping layer.

5. The light emitting diode of any of claims 1-4, wherein the first quantum well layer emits light in a blue color and the second quantum well layer emits light in a green color.

6. The light-emitting diode according to any one of claims 1 to 4, wherein the emission color of the first quantum well layer is a first emission color, the emission color of the second quantum well layer is a second emission color, and the light-emitting diode further comprises a color conversion layer provided on a side of the second doping layer remote from the quantum well layer, the color conversion layer being capable of converting the first emission color and the second emission color to a third emission color.

7. The light-emitting diode according to any one of claims 1 to 4, wherein the emission color of the first quantum well layer is a first emission color, and the emission color of the second quantum well layer is a second emission color, and wherein the light-emitting diode further comprises a color conversion layer provided on a side of the second doping layer remote from the quantum well layer, the color conversion layer being capable of converting the first emission color into the second emission color.

8. The light-emitting diode according to claim 6, further comprising a filter layer connected to a side of the second doping layer away from the quantum well layer;

9. A backlight module comprising a substrate and a plurality of leds as claimed in any one of claims 1 to 8 disposed on the substrate, wherein the plurality of led arrays are arranged on the substrate.

10. A display device comprising a housing and the backlight assembly of claim 9, wherein the backlight assembly is coupled to the housing.