CN115101632B - Preparation method of novel HBC solar cell - Google Patents
Preparation method of novel HBC solar cell Download PDFInfo
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- CN115101632B CN115101632B CN202210839368.1A CN202210839368A CN115101632B CN 115101632 B CN115101632 B CN 115101632B CN 202210839368 A CN202210839368 A CN 202210839368A CN 115101632 B CN115101632 B CN 115101632B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 51
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000000151 deposition Methods 0.000 claims abstract description 37
- 229910005855 NiOx Inorganic materials 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 11
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 8
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 9
- 229910000008 nickel(II) carbonate Inorganic materials 0.000 claims description 9
- ZULUUIKRFGGGTL-UHFFFAOYSA-L nickel(ii) carbonate Chemical group [Ni+2].[O-]C([O-])=O ZULUUIKRFGGGTL-UHFFFAOYSA-L 0.000 claims description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000001465 metallisation Methods 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 abstract 1
- 230000004907 flux Effects 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000010926 purge Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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Abstract
The invention relates to the technical field of solar cells, in particular to a novel preparation method of an HBC solar cell, which comprises the steps of polishing a monocrystalline silicon substrate, then carrying out front surface texturing on the monocrystalline silicon substrate, carrying out evaporation deposition of a NiOx film on the back surface of the textured monocrystalline silicon substrate, depositing an intrinsic hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate, slotting the intrinsic hydrogenated amorphous silicon layer and the NiOx film on the back surface through laser, opening an area where an N-type material is to be deposited, carrying out surface hydrophobic treatment on the monocrystalline silicon substrate by adopting HF, sequentially depositing the intrinsic hydrogenated amorphous silicon layer and the N-type hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate, sequentially depositing the intrinsic hydrogenated amorphous silicon layer and the SiNx layer on the front surface, slotting the intrinsic hydrogenated amorphous silicon layer and the N-type hydrogenated amorphous silicon layer on the back surface through laser, exposing the NiOx layer, depositing a TCO layer on the back surface and the like, so that the prepared HBC cell has lower cost and large productivity, and the mask layer is extremely easy to be stripped.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a novel HBC solar cell.
Background
The interdigital back contact heterojunction monocrystalline silicon Solar Cell (Interdigitated Back Contact Silicon Heterojunction Solar Cell, HBC Solar Cell for short) has the advantages of both an interdigital back contact Solar Cell (Interdigitated back contact Solar Cell, IBC Solar Cell for short) and a heterojunction Solar Cell with a thin intrinsic layer (Heterojunction with Intrinsic Thin-layer Solar Cell, HIT Solar Cell for short), removes a front surface metal electrode, reduces shading loss, obtains larger short-circuit current, and greatly reduces interface states, reduces surface recombination and improves open-circuit voltage by inserting a layer of high-quality intrinsic amorphous silicon passivation layer between heavily doped amorphous silicon and crystalline silicon.
However, at present, silicon nitride or silicon oxide is often selected as a mask layer in the process of patterning a conventional HBC battery, and the mask layer is easily stripped due to poor adhesion of amorphous silicon and silicon nitride during post wet cleaning, and finally the mask function is invalid, so that proper masked materials and mask materials play a vital role in forming the HBC battery; meanwhile, the HBC battery is usually prepared by adopting PECVD equipment, and as is known, the preparation temperature of the amorphous silicon is required to be lower than 200 ℃ due to the physical characteristics of the amorphous silicon, so that the stability of the amorphous silicon is far lower than that of a material prepared by high-temperature equipment due to the low deposition temperature, and the uniformity and the performance of the PECVD for depositing the amorphous silicon are required to be considered, so that the capacity achieved each time is extremely low, and the future mass production requirement is greatly limited; and PECVD equipment cost is expensive, and the money period is long, leads to the HBC battery's monolithic cost higher, and this also indirectly has influenced its mass production's process.
The information disclosed in this background section is only for enhancement of understanding of the general background of the disclosure and is not to be taken as an admission or any form of suggestion that this information forms the prior art that is well known to a person skilled in the art.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the preparation method of the novel HBC solar cell is characterized in that a layer of NiOx film is deposited on the back surface of the HBC solar cell to serve as a buffer material, and the technical problems that the preparation cost of the existing HBC solar cell is high, mass production is difficult, and a mask layer is very easy to peel are solved.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: the preparation method of the novel HBC solar cell comprises the following steps:
s1: pre-cleaning, polishing and re-cleaning the monocrystalline silicon substrate;
s2: front surface texturing is carried out on the monocrystalline silicon substrate;
s3: evaporating and depositing a NiOx film on the back surface of the monocrystalline silicon substrate after texturing by adopting an ALD method or a PEALD method;
s4: depositing an intrinsic hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate by adopting a PECVD method;
s5: grooving the intrinsic hydrogenated amorphous silicon layer and the NiOx film on the back by laser to form a region where the N-type material is to be deposited;
s6: carrying out surface hydrophobic treatment on the monocrystalline silicon matrix by adopting HF;
s7: sequentially depositing an intrinsic hydrogenated amorphous silicon layer and an n-type hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate by adopting a PECVD method, and sequentially depositing the intrinsic hydrogenated amorphous silicon layer and a SiNx layer on the front surface of the monocrystalline silicon substrate;
s8: grooving the back intrinsic hydrogenated amorphous silicon layer and the n-type hydrogenated amorphous silicon layer by laser to expose the NiOx layer;
s9: and depositing a TCO layer on the back surface.
Further, when front surface texturing is performed on monocrystalline silicon, a layer of SiNx needs to be deposited on the back surface to serve as a protective layer, and after the texturing is finished, HF solution and HCl solution are used for removing the SiNx.
Further, in the step S4, the deposition source of the NiOx thin film is nickel carbonate and oxygen dissolved in dilute hydrochloric acid.
Further, in the step S4, the NiOx thin film has a thickness ranging from 20nm to 50nm.
Further, in step S6, the monocrystalline silicon substrate is introduced into a dilute sulfuric acid tank, so that NiOx residues are completely removed from the grooved region, and then HF is used for treatment.
Further, the patterning of the grooved region and the metallization pattern of the step S5 and the step S8 are consistent.
Further, before step S9, the intrinsic hydrogenated amorphous silicon and the n-type hydrogenated amorphous silicon remaining in the tank need to be removed by using a diluted KOH solution.
Further, after step S9, insulation is performed using green nanosecond laser having a wavelength of 532nm, and the insulation resistance value of the PN region is tested.
In step S1, a KOH solution with a concentration of 5% -9% is specifically used to pre-clean the monocrystalline silicon substrate, the monocrystalline silicon substrate is polished by a polishing machine and a KOH solution with a concentration of 3% -8%, and the monocrystalline silicon is re-cleaned by a KOH solution and a hydrogen peroxide solution.
Further, in the step S7, the thickness of the intrinsic hydrogenated amorphous silicon layer is in the range of 15-30nm, the thickness of the n-type hydrogenated amorphous silicon layer is in the range of 20-40nm, the thickness of the intrinsic hydrogenated amorphous silicon layer is in the range of 15-30nm, and the thickness of the sinx layer is in the range of 80±20nm.
The beneficial effects of the invention are as follows: according to the method, amorphous silicon of a P region material is replaced by a NiOx layer which is easier to deposit and cheaper, and along with the introduction of nickel oxide, firstly, the adhesion effect of the nickel oxide and the amorphous silicon is improved, and the wet cleaning stripping problem of a conventional HBC battery caused by using masks such as amorphous silicon and silicon nitride is solved; secondly, the deposition of nickel oxide in the patent adopts an ALD method or a PEALD method, so that the problem of high equipment price caused by the traditional low-temperature PECVD method is reduced from the aspect of equipment, and meanwhile, the quantity of mass production is larger due to the advantages of ALD, so that the investment cost of the equipment is directly reduced; thirdly, due to the introduction of nickel oxide, the mask link of the HBC battery is optimized, and the deposition step of masks such as silicon nitride and the like is not carried out in one step, but the original functional layer intrinsic amorphous silicon layer is used as the mask, so that the process flow is simplified.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and other drawings may be obtained according to the drawings without inventive effort to those skilled in the art.
Fig. 1 is a flow chart showing a novel HBC solar cell according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Example 1
Type of monocrystalline silicon substrate employed in this example: 166mm silicon wafer of N type 3 Ω cm, thickness 150um.
Fig. 1 shows a structural cross-section of a solar cell under different conditions, in particular prepared by the following steps,
s1: placing the monocrystalline silicon substrate into a groove type alkali polishing machine table, wherein the working volume of the groove body is 360L, firstly pre-cleaning the monocrystalline silicon substrate by using a KOH solution with the concentration of 5-9% to remove organic and other pollutants generated in the surface cutting and transportation processes of the monocrystalline silicon substrate, then polishing the monocrystalline silicon substrate by using a KOH solution with the concentration of 3-8% for 800s at the temperature of 70-80 ℃, and finally re-cleaning the monocrystalline silicon substrate by using a KOH solution and a hydrogen peroxide solution;
s1.1: depositing a SiNx layer on the back surface of the monocrystalline silicon substrate by using PECVD equipment, wherein the thickness of the SiNx layer is 100nm;
s2: texturing the front surface of the monocrystalline silicon substrate by using KOH with the concentration of 3-5 percent for 500-800s at the temperature of 75-80 ℃;
s2.1: then placing the monocrystalline silicon substrate into a groove type alkali polishing machine table, cleaning the monocrystalline silicon substrate by using a KOH solution with the concentration of 5% -9%, removing the contamination on the surface of the monocrystalline silicon substrate, and then using a KOH solution with the concentration of 1% -1.5% and H with the concentration of 1.5% -2% 2 O 2 Post-cleaning the silicon wafer for 200-300s at 65-70 ℃, and finally washing off residual SiNx by using an HF solution with the concentration of 1% -1.5% and an HCl solution with the concentration of 1.5-2%;
s3: and (3) evaporating and depositing a NiOx film on the back of the monocrystalline silicon substrate after the texturing by using ALD equipment, wherein a deposition source is nickel carbonate dissolved in dilute hydrochloric acid and oxygen, the deposition flux of the nickel carbonate is 120-150sccm, short-time purging is carried out after the flux of the nickel carbonate is ended, the flux of the oxygen is 50-80sccm, short-time nitrogen purging is carried out after the flux of the oxygen is ended, and the four steps are one cycle, 20 times of continuous cycles and the deposition temperature is 280 ℃. The thickness of NiOx deposition is 30nm;
s4: depositing an intrinsic hydrogenated amorphous silicon layer with the thickness of 25nm on the back surface of the monocrystalline silicon substrate by adopting a PECVD method;
s5: grooving the intrinsic hydrogenated amorphous silicon layer and the NiOx film on the back by laser to form a region where the N-type material is to be deposited;
s6: putting the monocrystalline silicon substrate into a sulfuric acid tank with the concentration of 1-3%, and thoroughly removing NiOx in the area of a slot i for 100-150s, then putting the monocrystalline silicon substrate into the next tank for HF treatment, wherein the concentration of HF solution is 1-3%, and the time is 20-30s, so that the surface of the monocrystalline silicon substrate is hydrophobic;
s7: sequentially depositing an intrinsic hydrogenated amorphous silicon layer with the thickness of 20nm and an n-type hydrogenated amorphous silicon layer with the thickness of 30nm on the back surface of a monocrystalline silicon substrate by adopting a PECVD method, and sequentially depositing an intrinsic hydrogenated amorphous silicon layer with the thickness of 20nm and a SiNx layer with the thickness of 80nm on the front surface;
s8: grooving the back intrinsic hydrogenated amorphous silicon layer and the n-type hydrogenated amorphous silicon layer by laser to expose the NiOx layer, wherein the laser type is ultraviolet skin second laser or ultraviolet nanosecond laser, and the patterning is designed by adopting a silk screen;
s8.1: removing residual intrinsic hydrogenated amorphous silicon and n-type hydrogenated amorphous silicon in the groove by adopting KOH solution with the concentration of 2-5% to expose the NiOx layer;
s9: depositing a TCO film on the back, wherein the thickness of the TCO film is 70-100nm;
s10: laser insulation is carried out by using green nanosecond laser with the wavelength of 532nm, and the insulation resistance value of the PN region is tested to be larger than MΩ;
s11: the preparation of the metal conductor and the post-electrical performance test are all conventional in the art and will not be described in detail herein.
Example two
Unlike the first embodiment, in the step S3, the thickness of the buffer layer material NiOx is changed, so as to improve the back contact characteristic, that is, the back of the monocrystalline silicon substrate after the texturing is evaporated and deposited with the thin film of NiOx by using an ALD apparatus, the deposition source is nickel carbonate dissolved in dilute hydrochloric acid and oxygen, the deposition flux of nickel carbonate is 120-150sccm, the short-time purging is performed after the flux of the oxygen is 50-80sccm, the short-time nitrogen purging is performed after the flux of the oxygen is finished, and the four steps are one cycle, 25 consecutive cycles, the deposition temperature is 280 degrees, and the thickness of the NiOx deposited is 40nm.
Example III
Unlike the first embodiment, in the step S3, the thickness of the buffer layer material NiOx is changed, so as to improve the back contact characteristic, that is, the back of the monocrystalline silicon substrate after the texturing is evaporated by using an ALD apparatus to deposit a NiOx thin film, the deposition source is nickel carbonate dissolved in dilute hydrochloric acid and oxygen, the deposition flux of nickel carbonate is 120-150sccm, a short time of purging is performed after the flux of the flux is 50-80sccm, a short time of nitrogen purging is performed after the flux of oxygen is finished, and the four steps are one cycle, 30 consecutive cycles, the deposition temperature is 280 degrees, and the thickness of NiOx deposited is 50nm.
The test performance of the solar cell prepared in the above example is shown in table 1 below
TABLE 1
| Area/cm 2 | 274.3 | 274.3 | 274.3 |
| current/A | 9.107 | 9.112 | 9.102 |
| Voc/mv | 720.3 | 718.6 | 715.5 |
| FF | 71.58 | 69.33 | 65.43 |
| Efficiency of | 17.12 | 16.55 | 15.53 |
As shown in Table 1, the HBC battery is prepared by mixing the back, so that the equipment investment cost for preparing the HBC is reduced, and the front is free from shielding and the current is higher after the battery is prepared, and meanwhile, the battery structure combines part of the advantages of the HBC battery, so that the disadvantage of using the low-temperature PECVD for multiple times is avoided, and the battery structure has more advantages in future mass production.
It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and that the above embodiments and descriptions are merely illustrative of the principles of the present invention, and various changes and modifications may be made without departing from the spirit and scope of the invention, which is defined in the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (10)
1. The preparation method of the novel HBC solar cell is characterized by comprising the following steps:
s1: pre-cleaning, polishing and re-cleaning the monocrystalline silicon substrate;
s2: front surface texturing is carried out on the monocrystalline silicon substrate;
s3: evaporating and depositing a NiOx film on the back surface of the monocrystalline silicon substrate after texturing by adopting an ALD method or a PEALD method;
s4: depositing an intrinsic hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate by adopting a PECVD method;
s5: grooving the intrinsic hydrogenated amorphous silicon layer and the NiOx film on the back by laser to form a region where the N-type material is to be deposited;
s6: carrying out surface hydrophobic treatment on the monocrystalline silicon matrix by adopting HF;
s7: sequentially depositing an intrinsic hydrogenated amorphous silicon layer and an n-type hydrogenated amorphous silicon layer on the back surface of the monocrystalline silicon substrate by adopting a PECVD method, and sequentially depositing the intrinsic hydrogenated amorphous silicon layer and a SiNx layer on the front surface of the monocrystalline silicon substrate;
s8: grooving the back intrinsic hydrogenated amorphous silicon layer and the n-type hydrogenated amorphous silicon layer by laser to expose the NiOx layer;
s9: and depositing a TCO layer on the back surface.
2. The method for manufacturing a novel HBC solar cell according to claim 1, wherein when the front surface of the monocrystalline silicon is textured, a layer of SiNx is deposited on the back surface as a protective layer, and after the texturing is completed, the layer is removed by using an HF solution and an HCl solution.
3. The method for preparing a novel HBC solar cell according to claim 2, wherein in step S4, the deposition source of the NiOx thin film is nickel carbonate dissolved in dilute hydrochloric acid and oxygen.
4. The method for manufacturing a novel HBC solar cell according to claim 1 wherein the NiOx thin film in step S4 has a thickness in the range of 20-50nm.
5. The method of manufacturing a novel HBC solar cell according to claim 1 wherein in step S6, the monocrystalline silicon substrate is fed into a dilute sulfuric acid tank, niOx residues are completely removed from the grooved area, and then HF is used for treatment.
6. The method for manufacturing a novel HBC solar cell according to claim 1 wherein the patterning of the grooved region and the metallization pattern of step S5 and step S8 are kept identical.
7. The method for manufacturing a novel HBC solar cell according to claim 1, wherein the intrinsic hydrogenated amorphous silicon and the n-type hydrogenated amorphous silicon remaining in the tank are removed by using diluted KOH solution before step S9.
8. The method for manufacturing a novel HBC solar cell according to claim 1, wherein after step S9, insulation is performed using green nanosecond laser having a wavelength of 532nm, and the insulation resistance value of the PN region is tested.
9. The method for preparing a novel HBC solar cell according to claim 1, wherein in step S1, a KOH solution with a concentration of 5% -9% is specifically used to pre-clean the monocrystalline silicon substrate, a polishing machine is used to polish the monocrystalline silicon substrate with a KOH solution with a concentration of 3% -8%, and a KOH solution and a hydrogen peroxide solution are used to re-clean the monocrystalline silicon.
10. The method for manufacturing a novel HBC solar cell according to claim 1, wherein in the step S7, the thickness of the intrinsic hydrogenated amorphous silicon layer ranges from 15 to 30nm, the thickness of the n-type hydrogenated amorphous silicon layer ranges from 20 to 40nm, the thickness of the intrinsic hydrogenated amorphous silicon layer ranges from 15 to 30nm, and the thickness of the sinx layer ranges from 80±20nm.
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