CN115040975A - Device for purifying silicon tetrachloride - Google Patents
Device for purifying silicon tetrachloride Download PDFInfo
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- CN115040975A CN115040975A CN202210528352.9A CN202210528352A CN115040975A CN 115040975 A CN115040975 A CN 115040975A CN 202210528352 A CN202210528352 A CN 202210528352A CN 115040975 A CN115040975 A CN 115040975A
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- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 title claims abstract description 120
- 239000005049 silicon tetrachloride Substances 0.000 title claims abstract description 120
- 238000006460 hydrolysis reaction Methods 0.000 claims abstract description 85
- 230000007062 hydrolysis Effects 0.000 claims abstract description 68
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000013078 crystal Substances 0.000 claims abstract description 38
- 238000001035 drying Methods 0.000 claims abstract description 36
- 238000012544 monitoring process Methods 0.000 claims abstract description 33
- 239000002274 desiccant Substances 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000741 silica gel Substances 0.000 claims abstract description 17
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 17
- 239000002808 molecular sieve Substances 0.000 claims abstract description 8
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000746 purification Methods 0.000 claims description 58
- 239000003463 adsorbent Substances 0.000 claims description 31
- 238000001179 sorption measurement Methods 0.000 claims description 30
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 15
- 238000009423 ventilation Methods 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- IXPNQXFRVYWDDI-UHFFFAOYSA-N 1-methyl-2,4-dioxo-1,3-diazinane-5-carboximidamide Chemical compound CN1CC(C(N)=N)C(=O)NC1=O IXPNQXFRVYWDDI-UHFFFAOYSA-N 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims description 2
- 239000001913 cellulose Substances 0.000 claims description 2
- 229920002678 cellulose Polymers 0.000 claims description 2
- 235000010413 sodium alginate Nutrition 0.000 claims description 2
- 239000000661 sodium alginate Substances 0.000 claims description 2
- 229940005550 sodium alginate Drugs 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 52
- 239000007788 liquid Substances 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 44
- 238000000034 method Methods 0.000 description 18
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 10
- 238000004880 explosion Methods 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 7
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 7
- 239000005052 trichlorosilane Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000018044 dehydration Effects 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical group Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 3
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000004566 IR spectroscopy Methods 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004283 SiO 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
- B01D53/04—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography with stationary adsorbents
- B01D53/0407—Constructional details of adsorbing systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/26—Drying gases or vapours
- B01D53/261—Drying gases or vapours by adsorption
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
- C01B33/10784—Purification by adsorption
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/80—Water
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Treating Waste Gases (AREA)
- Silicon Compounds (AREA)
Abstract
本发明公开了一种提纯四氯化硅的装置,包括纯化装置、监控系统及管路组件;纯化装置,包括内部开设长条形腔室的外壳、进气管路和出气管路;长条形腔室前段为水解区,后段为干燥区;进气管路与水解区前端连通,出气管路与干燥区后端连通;出气管路与监控系统连通;水解区内均匀分布有吸附剂,吸附剂为结晶水合物,干燥区内均匀分布有干燥剂;干燥剂为硅胶或分子筛;管路组件,包括不合格STC管路和合格STC管路,合格STC管路与监控系统连通,不合格STC管路两端分别与监控系统和进气管路连通。本发明采用结晶水合物中的结晶水替代液态水来进行水解反应,实现了对STC安全有效的除杂。
The invention discloses a device for purifying silicon tetrachloride. The front part of the chamber is the hydrolysis zone, and the latter part is the drying zone; the intake pipeline is connected to the front end of the hydrolysis zone, and the exhaust pipeline is connected to the rear end of the drying zone; the exhaust pipeline is connected to the monitoring system; The desiccant is crystalline hydrate, and the desiccant is evenly distributed in the drying area; the desiccant is silica gel or molecular sieve; the pipeline components, including the unqualified STC pipeline and the qualified STC pipeline, the qualified STC pipeline is connected with the monitoring system, and the unqualified STC pipeline is connected with the monitoring system. The two ends of the pipeline are respectively communicated with the monitoring system and the intake pipeline. The invention adopts the crystal water in the crystal hydrate to replace the liquid water to carry out the hydrolysis reaction, and realizes the safe and effective impurity removal for STC.
Description
技术领域technical field
本发明涉及多晶硅生产技术领域,更具体的说,它涉及一种提纯四氯化硅的装置。The invention relates to the technical field of polysilicon production, and more particularly, to a device for purifying silicon tetrachloride.
背景技术Background technique
改良西门子法是一种生产多晶硅的制备工艺,其原理就是在1100℃左右的高纯硅芯上用高纯度的氢气还原高纯度的三氯氢硅(TCS),以此生成沉积在硅芯上的多晶硅,这种方法会产生富含三氯氢硅(TCS)、四氯化硅(STC)及二氯二氢硅(DSC)的氯硅烷残渣。目前改良西门子法中TCS的来源有两种,第一种是通过氯化氢与硅粉进行反应生成TCS,第二种是利用氯硅烷残渣中的STC,通过STC与氢气的氢化反应制备TCS。第二种方法中STC的纯度会对多晶硅原料TCS的纯度造成影响,进而影响多晶硅产品的品质,所以在制备TCS之前必须要对STC进行纯化处理。STC中的主要杂质元素为硼、磷及多种金属元素。The modified Siemens method is a preparation process for the production of polysilicon. polysilicon, this method produces a chlorosilane residue rich in trichlorosilane (TCS), silicon tetrachloride (STC) and dichlorodihydrosilicon (DSC). At present, there are two sources of TCS in the improved Siemens method. The first is to generate TCS by reacting hydrogen chloride with silicon powder, and the second is to use STC in the chlorosilane residue to prepare TCS by hydrogenation of STC and hydrogen. In the second method, the purity of the STC will affect the purity of the polycrystalline silicon raw material TCS, which in turn affects the quality of the polycrystalline silicon product. Therefore, the STC must be purified before preparing the TCS. The main impurity elements in STC are boron, phosphorus and various metal elements.
目前STC的纯化的方法主要为精馏法和部分水解法。精馏法是采用筛板塔、填料塔、浮阀塔等蒸馏装置,利用STC与各种杂质之间挥发度的差异进行分离。由于分子极性越大时,其分子间的作用力也会变大,分子得到自由运动所需要的能量更多,其沸点就越高。因此精馏法对于极性杂质,如三氯化硼、三氯化磷的去除,具有一定的限制。部分水解法则是利用三氯化硼(BCl3)与其他含硼络合物以及铁、铝等一些元素的氯化物容易水解、水化或被水络合,形成不挥发的化合物的特性来进行除杂。At present, the purification methods of STC are mainly rectification and partial hydrolysis. The rectification method uses distillation devices such as sieve tray towers, packed towers, and valve towers, and uses the difference in volatility between STC and various impurities to separate. Since the greater the polarity of the molecule, the greater the intermolecular force, the more energy required for the free movement of the molecule, and the higher its boiling point. Therefore, the rectification method has certain limitations for the removal of polar impurities, such as boron trichloride and phosphorus trichloride. The partial hydrolysis method is to use the characteristics of boron trichloride (BCl3) and other boron-containing complexes and chlorides of some elements such as iron and aluminum to be easily hydrolyzed, hydrated or complexed by water to form non-volatile compounds. miscellaneous.
中国专利CN103420381A涉及一种多晶硅生产四氯化硅渣浆回收处置方法及其装置,其采用的方式就是部分水解法,具体方法为将干燥处理后的氯硅烷残渣与水进行水解反应,通过淋洗吸收去除水解产生的氯化氢气体,再用碱液进行中和反应直至PH值为中性,以产生大量含有杂质元素的化合物沉淀,通过固液分离,将含有杂质元素的沉淀去除。一般来说此法对于比硅氢键和硅氯键优先水解的杂质都可以很容易除去,另一方面水解时稍稍过量的水使少部分STC水解成正硅酸。生成的正硅酸静置后极易失水成为硅胶,硅胶对于硼单质、三氯化磷及其他极性杂质具有较好的吸附作用。但该专利需要引入大量的水进入水解装置以进行水解反应,当氯硅烷进行水解反应时,水解反应所释放的大量热量,极容易导致水解装置内部残留的液态水发生爆沸、挥发等现象,进而导致水解装置内压力增大,严重时甚至会导致水解装置爆炸的发生。为减少爆炸发生的可能性,该专利设置了用于监控水加入量的流量控制器,但由于水解释放的热量不可控,该专利仍存在一定的安全隐患。Chinese patent CN103420381A relates to a method and device for recycling and disposing of silicon tetrachloride slurry in polysilicon production. The method adopted is a partial hydrolysis method. The hydrogen chloride gas generated by hydrolysis is absorbed and removed, and then neutralized with lye until the pH value is neutral, so as to produce a large amount of compound precipitates containing impurity elements, and the precipitates containing impurity elements are removed by solid-liquid separation. Generally speaking, this method can easily remove impurities that are hydrolyzed preferentially over silicon-hydrogen bonds and silicon-chlorine bonds. The generated orthosilicic acid is very easy to lose water and become silica gel after standing. Silica gel has a good adsorption effect on boron element, phosphorus trichloride and other polar impurities. But this patent needs to introduce a large amount of water into the hydrolysis device to carry out the hydrolysis reaction. When the chlorosilane carries out the hydrolysis reaction, the large amount of heat released by the hydrolysis reaction is very easy to cause the residual liquid water in the hydrolysis device to have phenomena such as bumping and volatilization. This in turn leads to an increase in the pressure in the hydrolysis device, and even an explosion of the hydrolysis device in severe cases. In order to reduce the possibility of explosion, the patent is equipped with a flow controller for monitoring the amount of water added. However, due to the uncontrollable heat released by hydrolysis, the patent still has certain potential safety hazards.
发明内容SUMMARY OF THE INVENTION
针对现有技术存在的不足,本发明的目的在于提供一种提纯四氯化硅的装置,其通过采用结晶水合物中的结晶水替代液态水来进行水解反应,实现了对STC安全有效的除杂。In view of the deficiencies in the prior art, the object of the present invention is to provide a device for purifying silicon tetrachloride, which realizes a safe and effective removal of STC by using the crystal water in the crystal hydrate to replace the liquid water for hydrolysis. miscellaneous.
为实现上述目的,本发明提供了如下技术方案:一种提纯四氯化硅的装置,其包括纯化装置、监控系统及管路组件;In order to achieve the above object, the present invention provides the following technical solutions: a device for purifying silicon tetrachloride, which includes a purification device, a monitoring system and a pipeline assembly;
纯化装置,其包括内部开设有长条形腔室的外壳、进气管路和出气管路;长条形腔室前段为水解区,后段为干燥区;进气管路与水解区前端连通,出气管路与干燥区后端连通;出气管路与监控系统连通;水解区内均匀分布有吸附剂,吸附剂为结晶水合物,干燥区内均匀分布有干燥剂;干燥剂为硅胶或分子筛;The purification device includes a shell with a long-shaped chamber inside, an air inlet pipeline and an air outlet pipeline; the front section of the elongated chamber is a hydrolysis area, and the rear section is a drying area; the air inlet pipeline is communicated with the front end of the hydrolysis area, and the outlet The gas pipeline is connected with the back end of the drying zone; the gas outlet pipeline is connected with the monitoring system; the adsorbent is evenly distributed in the hydrolysis zone, and the adsorbent is crystalline hydrate, and the drying zone is evenly distributed with a desiccant; the desiccant is silica gel or molecular sieve;
管路组件,其包括不合格STC管路和合格STC管路,合格STC管路与监控系统连通,不合格STC管路的两端分别与监控系统和进气管路连通。A pipeline assembly, which includes an unqualified STC pipeline and a qualified STC pipeline, the qualified STC pipeline is connected with the monitoring system, and the two ends of the unqualified STC pipeline are respectively connected with the monitoring system and the intake pipeline.
通过采用上述技术方案,本发明能使STC通过水解区的过程中均匀的与其中的结晶水进行接触,使STC中的杂质能够充分的与结晶水进行反应,提高了除杂效果;同时通过水解区的STC将在干燥区中充分去除其中的水分,减少了长条形腔室内的残留水含量,从而减少纯化装置内爆沸蒸发,进而爆炸的可能性。而且由于本发明利用结晶水合物中的结晶水代替液态水进行水解反应,利用结晶水合物的脱水来吸收水解反应所产生的热量,进一步减少了水解装置因温度过高,气压过大而爆炸的可能性。By adopting the above-mentioned technical scheme, the present invention can make the STC uniformly contact with the crystal water in the process of passing through the hydrolysis zone, so that the impurities in the STC can be fully reacted with the crystal water, and the impurity removal effect is improved; The STC in the drying zone will fully remove the water in the drying zone, reducing the residual water content in the elongated chamber, thereby reducing the possibility of bumping and evaporation in the purification device, and then explosion. Moreover, because the present invention uses the crystal water in the crystal hydrate to replace the liquid water to carry out the hydrolysis reaction, and utilizes the dehydration of the crystal hydrate to absorb the heat generated by the hydrolysis reaction, further reducing the explosion of the hydrolysis device due to excessive temperature and excessive air pressure. possibility.
本发明进一步设置为:所述结晶水合物为含有结晶水的乙酰胺,或者含有结晶水的海藻酸钠,或者含有结晶水的纤维素。The present invention further provides that: the crystal hydrate is acetamide containing crystal water, or sodium alginate containing crystal water, or cellulose containing crystal water.
通过采用上述技术方案,本发明借助了上述三种物质作为有机络合剂的特性,对STC中的金属元素杂质进行吸附,而且上述三种物质分子较大,沸点较高,性质稳定,很难随STC气体离开纯化装置,减少了引入新杂质的可能。By adopting the above technical scheme, the present invention utilizes the characteristics of the above three substances as organic complexing agents to adsorb metal element impurities in the STC, and the above three substances have larger molecules, higher boiling points, and stable properties, which are difficult to With the STC gas leaving the purification unit, the possibility of introducing new impurities is reduced.
本发明进一步设置为:所述纯化装置还包括吸附剂载体,吸附剂均匀分布在吸附剂载体上,吸附剂载体均匀分布在水解区内;吸附剂载体为硅胶或改性树脂。The present invention is further provided that: the purification device further comprises an adsorbent carrier, the adsorbent carrier is evenly distributed on the adsorbent carrier, and the adsorbent carrier is evenly distributed in the hydrolysis zone; the adsorbent carrier is silica gel or modified resin.
通过采用上述技术方案,STC通过硅胶时,其中的水分子和其他极性杂质能够被硅胶吸附去除。STC通过改性树脂时,改性树脂则能对其中的水分子进行吸附,对其中的极性杂质元素进行络合。By adopting the above technical scheme, when the STC passes through the silica gel, the water molecules and other polar impurities therein can be adsorbed and removed by the silica gel. When STC passes through the modified resin, the modified resin can adsorb the water molecules in it and complex the polar impurity elements in it.
本发明进一步设置为:所述纯化装置还包括多块固定在水解区的第一气路导板,多块第一气路导板沿水解区长度方向线性排布,将水解区间隔成多个区域,每块第一气路导板的一侧均开设有通气口,相邻两块第一气路导板的通气口相互错位,每两块相邻的第一气路导板中均匀填充吸附剂载体。The present invention is further provided as follows: the purification device further comprises a plurality of first gas path guide plates fixed in the hydrolysis zone, the plurality of first gas path guide plates are linearly arranged along the length direction of the hydrolysis zone, and the hydrolysis zone is spaced into a plurality of zones, One side of each first air path guide plate is provided with a ventilation port, the ventilation ports of two adjacent first air path guide boards are mutually displaced, and each two adjacent first air path guide boards are evenly filled with adsorbent carriers.
通过采用上述技术方案,第一气路导板的设置增长了STC在水解区内的路径,增加了STC在水解区内停留的时间,使得水解反应更加均匀充分。By adopting the above technical solution, the arrangement of the first gas path guide plate increases the path of the STC in the hydrolysis zone, increases the residence time of the STC in the hydrolysis zone, and makes the hydrolysis reaction more uniform and sufficient.
本发明进一步设置为:所述纯化装置还包括固定在干燥区末端的第一多孔挡板,干燥剂均匀填充在水解区与第一多孔挡板之间。The present invention further provides that: the purification device further comprises a first porous baffle fixed at the end of the drying zone, and the desiccant is uniformly filled between the hydrolysis zone and the first porous baffle.
通过采用上述技术方案,第一多孔挡板的设置,能够在不妨碍STC进入出气管路的前提下,减少硅胶随STC进入出气管路离开长条形腔室的可能性。By adopting the above technical solution, the arrangement of the first porous baffle can reduce the possibility of the silica gel entering the gas outlet pipeline with the STC and leaving the elongated chamber without preventing the STC from entering the gas outlet pipeline.
本发明进一步设置为:所述纯化装置还包括分别固定在干燥剂两端的两块第二多孔挡板,干燥剂均匀填充在两块第二多孔挡板之间。The present invention further provides that: the purification device further comprises two second porous baffles fixed at both ends of the desiccant, and the desiccant is uniformly filled between the two second porous baffles.
本发明进一步设置为:所述纯化装置还包括多个固定在长条形腔室内的吸附盒,每个吸附盒前端位于水解区前端,后端位于干燥区后端;每个吸附盒均为条形且均开设多个孔洞;每个吸附盒位于水解区的部分填充吸附剂载体,位于干燥区的部分填充干燥剂;所有吸附盒均平行于长条形腔室长度方向,且相互之间留有间隙。The present invention is further provided as follows: the purification device further comprises a plurality of adsorption boxes fixed in the elongated chamber, the front end of each adsorption box is located at the front end of the hydrolysis zone, and the rear end is located at the rear end of the drying zone; each adsorption box is a strip The part of each adsorption box in the hydrolysis zone is filled with adsorbent carrier, and the part in the drying zone is filled with desiccant; all the adsorption boxes are parallel to the length direction of the elongated chamber, and are kept between each other. There are gaps.
本发明进一步设置为:所述纯化装置还包括第二气路导板,多个吸附盒将长条形腔室内的空间分割成多条线性排布的通道,每条通道的一端均封堵一块第二气路导板,相邻两条通道对应的两块气路导板分别位于水解区和干燥区。The present invention is further provided as follows: the purification device further includes a second gas path guide plate, a plurality of adsorption boxes divide the space in the elongated chamber into a plurality of linearly arranged channels, and one end of each channel is blocked by a second gas path guide plate. Two gas path guide plates, two gas path guide plates corresponding to two adjacent channels are respectively located in the hydrolysis zone and the drying zone.
通过采用上述技术方案,第二气路导板的设置使得STC在进入出气管路之前能够均匀的与吸附剂和干燥剂进行接触。By adopting the above technical solution, the arrangement of the second gas path guide plate enables the STC to be in uniform contact with the adsorbent and the desiccant before entering the gas outlet pipeline.
本发明进一步设置为:还包括两个气路控制阀,一个气路控制阀控制监控系统与不合格STC管路之间气路的通断,另一个气路控制阀控制监控系统输出合格STC的气路通断。The present invention is further arranged as follows: it also includes two air circuit control valves, one air circuit control valve controls the opening and closing of the air circuit between the monitoring system and the unqualified STC pipeline, and the other air circuit control valve controls the monitoring system to output the qualified STC pipeline. Air circuit on and off.
通过采用上述技术方案,气路控制阀的设置便于操作者在监控系统合格STC的气路或不合格STC气路发生问题时,中断气路进行检修。By adopting the above technical solution, the setting of the gas circuit control valve is convenient for the operator to interrupt the gas circuit for maintenance when problems occur in the gas circuit of the qualified STC or the unqualified STC gas circuit of the monitoring system.
本发明进一步设置为:还包括对出气管路输出STC进行提纯的提纯装置,提纯装置与监控系统连通。The present invention is further provided as follows: it further comprises a purification device for purifying the output STC of the gas outlet pipeline, and the purification device is communicated with the monitoring system.
通过采用上述技术方案,本发明通过提纯装置对STC中的金属杂质进行进一步的分离与去除。By adopting the above technical scheme, the present invention further separates and removes the metal impurities in the STC through the purification device.
综上所述,本发明相比于现有技术具有以下有益效果:To sum up, the present invention has the following beneficial effects compared to the prior art:
1、本发明能使STC通过水解区的过程中均匀的与其中的结晶水进行接触,使STC中的杂质能够充分的与结晶水进行反应,提高了除杂效果。1. The present invention can make the STC uniformly contact with the crystal water in the process of passing through the hydrolysis zone, so that the impurities in the STC can be fully reacted with the crystal water, and the impurity removal effect is improved.
2、本发明通过水解区的STC将在干燥区中充分去除其中的水分,减少了长条形腔室内的残留水含量,减少了纯化装置因水解释放的热量,导致残留水爆沸蒸发的可能性,从而减少纯化装置爆炸的可能性。2. The present invention fully removes the moisture in the drying zone through the STC in the hydrolysis zone, reduces the residual water content in the elongated chamber, reduces the heat released by the purification device due to hydrolysis, and causes the residual water to boil and evaporate. Possibility , thereby reducing the possibility of explosion of the purification device.
3、本发明利用结晶水合物中的结晶水代替液态水进行水解反应,利用结晶水合物的脱水来吸收水解反应所产生的热量,进一步减少了水解装置因温度过高,气压过大而爆炸的可能性。3. The present invention uses the crystal water in the crystal hydrate to replace the liquid water to carry out the hydrolysis reaction, and uses the dehydration of the crystal hydrate to absorb the heat generated by the hydrolysis reaction, further reducing the explosion of the hydrolysis device due to excessive temperature and excessive air pressure. possibility.
附图说明Description of drawings
图1为本发明实施例1的基本结构示意图;1 is a schematic diagram of the basic structure of Embodiment 1 of the present invention;
图2为本发明实施例1中纯化装置的全剖视图;Fig. 2 is the full cross-sectional view of the purification device in Example 1 of the present invention;
图3为本发明实施例2中纯化装置的全剖视图;3 is a full cross-sectional view of the purification device in Example 2 of the present invention;
图4为本发明实施例3中纯化装置的全剖视图。FIG. 4 is a full cross-sectional view of the purification device in Example 3 of the present invention.
图中:1、纯化装置;11、外壳;111、长条形腔室;12、进气管路;13、出气管路;14、第一气路导板;141、通气口;15、第一多孔挡板;16、第二多孔挡板;17、吸附盒;18、第二气路导板;2、监控系统;3、提纯装置;5、吸附剂载体;6、干燥剂;7、合格STC管路;8、不合格STC管路。In the figure: 1. Purification device; 11. Housing; 111. Elongated chamber; 12. Inlet pipeline; 13. Outlet pipeline; 14. First gas path guide plate; Hole baffle; 16. Second porous baffle plate; 17. Adsorption box; 18. Second gas path guide plate; 2. Monitoring system; 3. Purification device; 5. Adsorbent carrier; 6. Desiccant; 7. Qualified STC pipeline; 8. Unqualified STC pipeline.
具体实施方式Detailed ways
下面将结合附图说明对本发明的技术方案进行清楚的描述,显然,所描述的实施例并不是本发明的全部实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明的保护范围。The technical solutions of the present invention will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are not all embodiments of the present invention, and all other The embodiments all belong to the protection scope of the present invention.
需要说明的是,术语“中心”、“上”、“下”、“水平”、“左”、“右”、“前”、“后”、“横向”、“纵向”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,并不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。It should be noted that the terms "center", "upper", "lower", "horizontal", "left", "right", "front", "rear", "horizontal", "vertical", etc. indicate the orientation or The positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, Therefore, it should not be construed as a limitation of the present invention.
实施例1Example 1
如图1-2所示,为本发明实施例1的示意图,一种提纯四氯化硅的装置,其包括纯化装置1、检测STC中杂质含量是否合格的监控系统2及管路组件;纯化装置1,其包括内部开设有长条形腔室111的外壳11、用于输送STC进气管路12和出气管路13;长条形腔室111的两端分别与进气管路12和出气管路13连通;出气管路13还与监控系统2连通,以便于将纯化后的STC送入监控系统2;长条形腔室111前段为水解区,后段为干燥区,水解区内均匀分布有吸附剂,干燥区内均匀分布有干燥剂6;吸附剂为结晶水合物,干燥剂6为能够吸附极性分子的颗粒状硅胶。管路组件,其包括不合格STC管路8和合格STC管路7,合格STC管路7与监控系统2连通,以输出杂质含量合格的STC;不合格STC管路8的两端分别与监控系统2和进气管路12连通,以便于将杂质含量不合格的STC通过进气管路12重新送入长条形腔室111。As shown in Figure 1-2, it is a schematic diagram of Example 1 of the present invention, a device for purifying silicon tetrachloride, which includes a purification device 1, a
当STC从进气管路12进入水解区时,由于此时STC为气态,温度较高,其与结晶水合物接触时,结晶水合物极容易发生脱水,使得结晶水容易与STC中的三氯化硼等杂质进行水解反应,生成不挥发的化合物;以三氯化硼水解为例,反应机理为:BCl3+3H2O=B(OH)3+3HCl。而且结晶水还可与STC中的三氯化硼等杂质络合生成不挥发的络合物,如B(OH)3;另外少部分的STC与结晶水可水解生成正硅酸(H2SiO4),反应公式为:SiCl4+4H2O=H2SiO4+4HCl,借助正硅酸易失水变成硅胶的特性,生成硅胶,以帮助吸附水分子和极性杂质。随后通过水解区的STC进入干燥区,由硅胶对STC中的水分子和极性杂质进行进一步的吸附去除。随后离开干燥区的STC将通过出气管路13离开纯化装置1,进入监控系统2进行杂质含量检测,以输出杂质含量合格的STC。When the STC enters the hydrolysis zone from the
结晶水合物失去结晶水的过程为化学键的断裂,需要吸收热量。本实施例中STC通过水解区的过程中将均匀的与其中的结晶水进行接触,使STC中的杂质能够充分的与结晶水进行反应,提高了除杂效果;同时通过水解区的STC将在干燥区中充分去除其中的水分,减少了长条形腔室111内的残留水含量,减少了纯化装置1因水解释放的热量,导致残留水爆沸蒸发的可能性,从而减少纯化装置1爆炸的可能性。而且由于本实施例利用结晶水合物中的结晶水代替液态水进行水解反应,利用结晶水合物的脱水来吸收水解反应所产生的热量,进一步减少了水解装置因温度过高,气压过大而爆炸的可能性。The process of crystal hydrate losing crystal water is the breaking of chemical bonds, which needs to absorb heat. In the present embodiment, the STC will be uniformly contacted with the crystal water in the process of passing through the hydrolysis zone, so that the impurities in the STC can fully react with the crystal water, thereby improving the impurity removal effect; at the same time, the STC passing through the hydrolysis zone will be in The moisture in the drying zone is fully removed, the residual water content in the
具体的,本实施例中的长条形腔室111为胶囊形,其两端分别向进气管路12、出气管路13平滑收缩,以便于STC顺利的进入水解区并顺利离开长条形腔室111。Specifically, the
具体的。本实施例中进气管路12的管径大于出气管路13的管径,使得出气管路13流速小于进气管路12流速,以增加STC在长条形腔室111内停留的时间,便于STC在长条形腔室111中与结晶水和硅胶充分接触。specific. In this embodiment, the diameter of the
具体的,纯化装置1还包括吸附剂载体5,吸附剂均匀分布在吸附剂载体5上,吸附剂载体5均匀分布在水解区内;吸附剂载体5为硅胶,载体可充装在吸附柱或者类似吸附柱的功能容器中。Specifically, the purification device 1 further includes an
具体的,纯化装置1还包括多块位于水解区并与外壳11内侧壁固定连接的第一气路导板14,所有第一气路导板14沿水解区长度方向线性排布,将水解区间隔成多个区域,每块第一气路导板14的一侧均开设有便于STC通过的通气口141,相邻两块第一气路导板14的通气口141相互错位,每两块相邻的第一气路导板14中均匀填充吸附剂载体5。第一气路导板14的设置使得STC只能通过通气口141穿过水解区,增长了STC在水解区内的路径,增加了STC在水解区内停留的时间,使得水解反应更加均匀充分。Specifically, the purification device 1 further includes a plurality of first gas path guide
具体的,本实施例中第一气路导板14分为两组,两组第一气路导板14间隔设置,一组第一气路导板14的通气口141位于长条形腔室111顶部,另一组第一气路导板14的通气口141位于长条形腔室111底部,以进一步增长STC在水解区内的路径。Specifically, in this embodiment, the first air path guide
具体的,纯化装置1还包括位于干燥区末端并与外壳11内侧壁固定连接的第一多孔挡板15,干燥剂6均匀填充在水解区与第一多孔挡板15之间。第一多孔挡板15的设置,能够在不妨碍STC进入出气管路13的前提下,减少硅胶随STC进入出气管路13离开长条形腔室111的可能性。Specifically, the purification device 1 further includes a first
本实施例还包括两个气路控制阀,一个气路控制阀控制监控系统2与不合格STC管路之间气路的通断,另一个气路控制阀控制监控系统2与合格STC管路7之间的气路通断。气路控制阀的设置便于操作者控制监控系统2与合格STC管路7或不合格STC管路8之间的气路通断,以便进行检修。This embodiment also includes two gas circuit control valves, one gas circuit control valve controls the on-off of the gas circuit between the
本实施例还包括对出气管路13输出的STC进行提纯的提纯装置3,出气管路13与提纯装置3连通,提纯装置3对STC中的杂质进行进一步的分离与去除。提纯装置3再次提纯后的STC将被送入监控系统2进行杂质含量评定。This embodiment also includes a
具体的,本实施例中提纯装置3为采用精馏法去除STC中杂质的装置,以对其中的金属元素杂质进行进一步去除,而且对于极少量夹杂在STC中的乙酰胺之类的大分子物质和HCl,也可以通过精馏法进行除去。Specifically, in this embodiment, the
具体的,本实施例中的监控系统2采用红外光谱来对STC中的杂质进行检测。Specifically, the
本实施例中,结晶水合物为含有结晶水的乙酰胺。乙酰胺作为有机络合剂,能对STC中的金属元素杂质进行吸附,其分子较大,沸点较高,性质稳定,很难随STC气体离开纯化装置,减少了引入新杂质的可能。而且由于水解区内存在着由气态STC带来的热量和水解反应产生的热量,温度较高,使得乙酰胺(CH3CONH2)有一定的几率发生脱水生成乙腈(CH3CN),乙腈也对金属元素杂质有着不错的络合作用,能够去除STC中的金属元素杂质。因为乙腈的沸点也高于STC,性质较为稳定,很难随STC气体离开纯化装置,不容易引入新杂质。In this example, the crystal hydrate is acetamide containing crystal water. As an organic complexing agent, acetamide can adsorb metal element impurities in STC. Its molecule is large, its boiling point is high, and its properties are stable. It is difficult to leave the purification device with the STC gas, reducing the possibility of introducing new impurities. Moreover, due to the heat brought by the gaseous STC and the heat generated by the hydrolysis reaction in the hydrolysis zone, the temperature is relatively high, so that the acetamide (CH3CONH2) has a certain probability of being dehydrated to form acetonitrile (CH3CN), and acetonitrile also has metal element impurities. Good complexation can remove metal element impurities in STC. Because the boiling point of acetonitrile is also higher than that of STC, and its properties are relatively stable, it is difficult to leave the purification device with the STC gas, and it is not easy to introduce new impurities.
乙酰胺结晶水吸附剂和硅胶干燥剂的比例为10:1~1:1,最优比例4:1,纯化最后得到的STC和原始STC中的杂质含量如表1所示:The ratio of acetamide crystal water adsorbent and silica gel desiccant is 10:1 to 1:1, and the optimal ratio is 4:1. The impurity content in the STC and original STC obtained after purification is shown in Table 1:
表1对应STC杂质含量Table 1 corresponds to STC impurity content
综上所述,本实施例能使STC通过水解区的过程中均匀的与其中的结晶水进行接触,使STC中的杂质能够充分的与结晶水进行反应,提高了除杂效果;同时通过水解区的STC将在干燥区中充分去除其中的水分,减少了长条形腔室111内的残留水含量,减少了纯化装置1因水解释放的热量,导致残留水爆沸蒸发的可能性,从而减少纯化装置1爆炸的可能性。而且由于本实施例利用结晶水合物中的结晶水代替液态水进行水解反应,利用结晶水合物的脱水来吸收水解反应所产生的热量,进一步减少了水解装置因温度过高,气压过大而爆炸的可能性。To sum up, the present embodiment can make STC uniformly contact with the crystal water therein in the process of passing through the hydrolysis zone, so that the impurities in the STC can be fully reacted with the crystal water, and the impurity removal effect is improved; Simultaneously by hydrolysis The STC in the drying zone will fully remove the moisture in the drying zone, reducing the residual water content in the
实施例2Example 2
如图3所示,为本发明实施例2中纯化装置1的全剖视图。本实施例与实施例1的不同之处如下:As shown in FIG. 3 , it is a full cross-sectional view of the purification device 1 in Example 2 of the present invention. The difference between this embodiment and embodiment 1 is as follows:
本实施例中吸附剂载体5为弱碱性的改性树脂,堆积密度为0.40-0.60/ml。改性树脂能对STC中的水分子进行吸附,对其中的极性杂质元素进行络合。干燥剂6为分子筛,分子筛是一种人工合成的具有筛选分子作用的水合硅铝酸盐或天然沸石。分子筛的晶穴内有着较强的极性,使得分子筛能够对含极性基团的分子产生较强的吸附力。In this embodiment, the
本实施例中纯化装置1还包括两块第二多孔挡板16,两块第二多孔挡板16分别位于干燥区两端并与外壳11内侧壁固定连接,分子筛均匀填充在两块多孔挡板之间。由于水解区中水分子较多,两块第二多孔挡板16和外壳11内侧壁构成隔离空间能够将水解区中的水分子尽量隔离在干燥区外,提高干燥剂6的干燥效果。本实施例中水解区与干燥区之间留有缝隙,以进一步分隔水解区与干燥区,减少水解区中水分子进入干燥区的可能性。In this embodiment, the purification device 1 further includes two second
本实施例中无提纯装置3,出气管路13直接连接监控系统2。In this embodiment, there is no
本实施例纯化最后得到的STC和原始STC中的杂质含量如表2所示,STC中的杂质含量通过纯化装置后被有效降低;The impurity content in the STC and the original STC obtained by the purification of the present embodiment is shown in Table 2, and the impurity content in the STC is effectively reduced after passing through the purification device;
表2对应STC杂质含量Table 2 corresponds to STC impurity content
实施例3Example 3
如图4所示,为本发明实施例3中纯化装置1的全剖视图。本实施例与实施例2的不同之处如下:As shown in FIG. 4 , it is a full cross-sectional view of the purification device 1 in Example 3 of the present invention. The difference between this embodiment and
具体的,纯化装置1还包括多个与外壳11内侧壁固定连接的吸附盒17,每个吸附盒17前端位于水解区前端,后端位于干燥区后端;每个吸附盒17均为条形,且盒体均匀开设多个孔洞;每个吸附盒17位于水解区的部分填充吸附剂载体5,位于干燥区的部分填充分子筛;所有吸附盒17均平行于长条形腔室111长度方向,且相互之间留有间隙。本实施例中吸附盒17设置四个。Specifically, the purification device 1 also includes a plurality of
具体的,纯化装置1还包括第二气路导板18;四个吸附盒17将长条形腔室111分割成五条线性排布的通道,所有通道均连通进气管路12与出气管路13;每条通道的一端均封堵有一块第二气路导板18,相邻两条通道对应的两块气路导板分别位于水解区前端和干燥区后端。第二气路导板18的设置使得STC只能穿过吸附盒17才可进入出气管路13,且由于STC穿过一个吸附盒17后的路径不是沿通道长度方向的直线,这就使得STC很有可能会与通道侧壁的另一个吸附盒17进行接触,甚至穿过另一个吸附盒17,从而使得STC能够充分的与吸附剂和干燥剂6进行接触,以进行水解反应并去除多余水分。Specifically, the purification device 1 further includes a second gas path guide
本实施例纯化最后得到的STC和原始STC中的杂质含量如表3所示,STC中的杂质含量通过纯化装置后被有效降低;The impurity content in the STC and the original STC obtained by the purification of the present embodiment is shown in Table 3, and the impurity content in the STC is effectively reduced after passing through the purification device;
表3对应STC杂质含量Table 3 corresponds to STC impurity content
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.
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