CN115036789B - GaAs-based high-speed vertical cavity surface emitting laser based on type-II tunnel junction - Google Patents
GaAs-based high-speed vertical cavity surface emitting laser based on type-II tunnel junction Download PDFInfo
- Publication number
- CN115036789B CN115036789B CN202210629622.5A CN202210629622A CN115036789B CN 115036789 B CN115036789 B CN 115036789B CN 202210629622 A CN202210629622 A CN 202210629622A CN 115036789 B CN115036789 B CN 115036789B
- Authority
- CN
- China
- Prior art keywords
- layer
- type
- mirror
- tunnel junction
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 51
- 230000003647 oxidation Effects 0.000 claims abstract description 68
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims description 272
- 230000003287 optical effect Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 19
- 239000002346 layers by function Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 4
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- -1 first mirror Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 11
- 239000007924 injection Substances 0.000 abstract description 11
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 230000005641 tunneling Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
- H01S5/18347—Mesa comprising active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a GaAs-based high-speed vertical cavity surface emitting laser based on a type-II tunnel junction, and belongs to the technical field of lasers. The GaAs-based type-II high band gap tunnel junction and the double oxide layer group are used for a high-speed vertical cavity surface emitting laser, the type-II high band gap tunnel junction is used as a conversion layer, and the second reflector and the third reflector are connected, so that an N-type third reflector can be used for replacing a P-type second reflector above the conversion layer, parasitic resistance is reduced, and parasitic interception bandwidth is improved; the oxidation limiting layer groups are respectively arranged on the upper part and the lower part of the active layer, so that the current limitation is improved, the current injection efficiency is optimized, the output power and the conversion efficiency of the device are improved, and the device is suitable for GaAs basal plane emitting lasers.
Description
Technical Field
The invention belongs to the technical field of laser, and particularly relates to a GaAs-based high-speed vertical cavity surface emitting laser.
Background
A Vertical Cavity Surface Emitting Laser (VCSEL) is a semiconductor device emitting laser light perpendicular to a cavity surface, and has been proposed in 1977, and has been widely used in various fields such as optical communication, optical interconnection, sensing, optical storage, laser display, and laser radar, due to its advantages of circular symmetric light spot, single longitudinal mode output, small threshold current, high photoelectric conversion efficiency, low cost, easy two-dimensional integration, and in-plane detection. The conventional VCSEL structure includes a substrate, an n-type bragg mirror, an active layer, a confinement layer, and a p-type bragg mirror stacked in this order, and when a current is injected into the active layer, the light intensity is continuously increased, and electrons in a conduction band of a high energy state transition to a valence band of a low energy state, and as a specific wavelength is reflected back and forth between the n-type bragg mirror and the p-type bragg mirror above and below the active layer, the amplification process is repeated continuously, forming a laser.
However, conventional VCSELs have limitations in themselves. First, conventional VCSEL structures require multiple layers of P-type and N-type mirrors, and one problem with this approach is the higher free carrier absorption in the laser P-doped layer and the non-uniform current injection caused by the poor mobility of the P-type layer.
Currently, tunnel junctions are introduced into surface-emitting laser structures, and there are mainly two uses, one is to limit current and optical field by using tunnel junctions, secondary epitaxy is required in the process to affect the yield, and the other is multi-junction VCSEL to improve the conversion efficiency, and in these applications, a homogeneous tunnel junction or a type of tunnel junction is adopted.
The following are some of the vertical cavity surface emitting laser structures disclosed in the prior art:
the patent with publication number CN104577711A discloses a vertical cavity surface emitting laser, which comprises a substrate, a first Bragg reflector, a first limiting layer, an active region, a second limiting layer, a second Bragg reflector and an ohmic contact layer which are arranged in a laminated manner; the active region is of a quantum well structure, the barrier layer is made of InGaAlAs, and the potential well layer is made of InGaAsN; a heavily doped tunnel junction and a third limiting layer are further arranged between the second limiting layer and the second Bragg reflector; an oxidation limiting layer is also arranged in the second limiting layer. The laser takes InGaAsN/InGaAlAs material as an active region, has large conduction band order ratio, can effectively limit injected carriers, reduces threshold current and improves laser gain; in 1550nm equal-wavelength bands, the active region material has low N content, and devices with high material quality can be easily obtained. The structure is an InP-based laser, the tunnel junction is different from a GaAs-based tunnel junction, an upper Bragg reflector and a lower Bragg reflector matched with an InP substrate are adopted, the refractive index difference is small, and the performance is greatly different from that of a GaAs-based DBR. The GaAs-based tunnel junction with higher performance is used for the GaAs-based laser, and the performance of the laser can be greatly improved by combining the DBR structure with the high performance of the laser and the more optimized current limit.
A vertical cavity surface emitting laser having a highly doped tunnel junction, as disclosed in patent publication No. CN100547867C, comprising: a heat sink; a heat sink, the heat sink being formed on the heat sink; an upper N-type electrode formed in the middle of the heat sink; an upper N-type DBR layer having an inverted trapezoid shape, the upper N-type DBR layer being formed on the upper N-type electrode; a high aluminum oxide confinement layer located on both sides of the middle of the upper N-type DBR layer; an insulating layer formed on the outer side of the upper N-type DBR layer; an optical resonator fabricated on the upper N-type DBR layer; a lower N-type DBR layer fabricated on the optical resonator; a substrate fabricated on the lower N-type DBR layer; and the lower N-type electrode is manufactured on the substrate, and a light emitting window is formed in the middle of the lower N-type electrode. The laser structure is a bottom emission laser structure, is not suitable for a high-speed laser, and a top emission structure suitable for the high-speed laser is proposed. The simple current limitation adopted in the patent CN100547867C cannot obtain high injection efficiency, and the adopted tunnel junction is a traditional tunnel junction, and the performance is poorer than that of a type-ii tunnel junction.
The GaAs-based type-II high-band-gap tunnel junction and the vertical cavity surface emitting laser structure of the upper and lower oxide layer groups are suitable for high-speed requirements, and the high-speed performance is further improved by the design of cavity contact.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a GaAs-based high-speed vertical cavity surface emitting laser based on a type-II tunnel junction. The GaAs-based type-II high band gap tunnel junction and the double oxide layer group are used for a high-speed vertical cavity surface emitting laser, the type-II high band gap tunnel junction is used as a conversion layer, and the second reflector and the third reflector are connected, so that an N-type third reflector can be used for replacing a P-type second reflector above the conversion layer, parasitic resistance is reduced, and parasitic interception bandwidth is improved; the oxidation limiting layer groups are respectively arranged on the upper part and the lower part of the active layer, so that the current limitation is improved, the current injection efficiency is optimized, the output power and the conversion efficiency of the device are improved, and the device is suitable for GaAs basal plane emitting lasers.
In order to achieve the above object, the GaAs-based high-speed vertical cavity surface emitting laser according to the present invention is characterized by comprising a substrate layer, an N contact layer, an N electrode, a first mirror, a functional layer, a second mirror, a P contact layer, a P electrode, a conversion layer, and a third mirror, wherein the substrate layer, the N contact layer, the first mirror, the functional layer, the second mirror, the P contact layer, the conversion layer, and the third mirror are sequentially stacked; the first mirror is an n-type Bragg mirror, and the second mirror is a p-type Bragg mirrorThe third reflector is an n-type Bragg reflector, the conversion layer is a GaAs-based high band gap type-II tunnel junction, and the conversion layer is arranged between the second reflector and the third reflector; the functional layer comprises a first oxidation limiting layer group, an active layer and a second oxidation limiting layer group, wherein the first oxidation limiting layer group is a P-type limiting layer and is arranged between the active layer and the first reflecting mirror, the second oxidation limiting layer group is an N-type limiting layer and is arranged between the active layer and the second reflecting mirror, and the second oxidation limiting layer group and the first oxidation limiting layer group both comprise at least two layers of Al x The GaAs oxide layer, x is in the range of 0.94-1, the first oxidation limiting layer group and the second oxidation limiting layer group are symmetrically distributed relative to the active layer, the carriers are transmitted to the active layer through the first oxidation limiting layer group and the second oxidation limiting layer group to be compositely emitted, the substrate layer and the N contact layer form a first cylinder with the same diameter, a first table top is formed on the upper surface of the first cylinder, a first reflecting mirror, a functional layer, a second reflecting mirror and a P contact layer form a second cylinder with the same diameter, a second table top is formed on the upper surface of the second cylinder, the conversion layer and the third reflecting mirror form a third cylinder with the same diameter, the upper surface of the third cylinder forms a third table top, the first table top, the second table top and the third table top are coaxially arranged, the diameters of the N electrode are sequentially reduced, the N electrode is fixed on the first table top, and the P electrode is fixed on the second table top.
The invention relates to a GaAs-based high-speed vertical cavity surface emitting laser based on a type-II tunnel junction, which is characterized in that a second oxidation limiting layer group and a first oxidation limiting layer group both comprise 6 layers of Al x And a GaAs oxide layer.
The GaAs-based high-speed vertical cavity surface emitting laser based on the type-II tunnel junction is characterized in that oxidation holes are formed in a first oxidation limiting layer group and a second oxidation limiting layer group, the aperture range of the oxidation holes is 1-10 mu m, and the thickness range of each layer in the first oxidation limiting layer group and the second oxidation limiting layer group is 10-30nm.
The invention relates to a GaAs-based high-speed vertical cavity surface emitting laser based on a type-II tunnel junction, which is characterized in that a conversion layer comprises a P-type doped layer and an N-type doped layer which are sequentially connected from top to bottom, the P-type doped layer is close to a third reflector, the N-type doped layer is close to a P contact layer, the material band gap energy forms the type-II tunnel junction, the type-II tunnel junction has a GaAs lattice constant, the semiconductor material of the N-type doped layer comprises indium, gallium and arsenic, and the semiconductor material of the P-type doped layer comprises indium, gallium, arsenic and antimony.
The invention relates to a GaAs-based high-speed vertical cavity surface emitting laser based on a type-II tunnel junction, which is characterized in that a substrate layer, an N contact layer, a first reflecting mirror, a functional layer, a second reflecting mirror, a P contact layer, a conversion layer and a third reflecting mirror form an optical cavity, the conversion layer is positioned at a node of a standing wave of an optical field in the optical cavity, a P-type doped layer is made of P-type doped material of InGaAsSb, and an N-type doped layer is made of N-type doped material of InGaAs; the doping atoms of the P-type doping layer of the type-II tunnel junction are C, and the doping atoms of the N-type doping layer are Te; the doping concentration of doping atoms in the P-type doping layer and the N-type doping layer of the type-II tunnel junction is higher than 1X10 19 cm 3 Is used for the doping level of (a).
The invention relates to a GaAs-based high-speed vertical cavity surface emitting laser based on a type-II tunnel junction, which is characterized in that the doping concentration of a P-type contact layer is higher than 3X10 18 cm 3 The P-type doped layer of (2) realizes a metal ohmic structure and a laser cavity contact structure, the thickness of the P-type contact layer is larger than 15nm, and the P-type contact layer 309 is arranged at the optical field node position.
The invention relates to a GaAs-based high-speed vertical cavity surface emitting laser based on a type-II tunnel junction, which is characterized in that a first reflecting mirror, a second reflecting mirror and a third reflecting mirror are all made of Al with gradually changed components x Ga 1-x As Bragg reflectors, x is in the range of 0.1-1.
The GaAs-based high-speed vertical cavity surface emitting laser based on the type-II tunnel junction is characterized in that the substrate layer is an opaque substrate.
Compared with the prior art, the invention has the following beneficial effects:
(1) The design of the first table top, the second table top and the third table top is convenient for the heat dissipation of the laser, more importantly, the N electrode and the P electrode are respectively fixed on the first table top and the second table top, and the current does not pass through the third reflecting mirror, so that the injection efficiency is improved;
(2) The upper part and the lower part of the active layer are respectively provided with an oxidation limiting layer group and the design of a multi-layer structure of the oxidation limiting layer group is beneficial to better limiting current and improving the injection efficiency of the current;
(3) The type-II tunnel junction with better tunneling capability is used, so that the same tunneling current requires less supply bias, i.e., lower resistance.
Drawings
FIG. 1 is a graph of staggered bandgap alignment of type-I and type-II heterojunctions.
Fig. 2 is a type-ii tunnel junction structure diagram according to embodiment 1.
Fig. 3 is a schematic structural diagram of a GaAs-based high-speed vertical cavity surface emitting laser based on a type-ii tunnel junction according to embodiment 1.
Detailed Description
The invention is further described below by means of specific examples.
Example 1
The embodiment relates to a GaAs-based high-speed vertical cavity surface emitting laser based on a type-II tunnel junction, which aims to improve current injection efficiency by utilizing high tunneling probability and multiple groups of oxidation limiting layers of the type-II tunnel junction and improve output power and conversion efficiency of the laser.
As shown in fig. 2 and 3, the GaAs-based high-speed vertical cavity surface emitting laser according to the present embodiment includes a substrate layer 301, an N contact layer 302, an N electrode 303, a first mirror 304, a functional layer 313, a second mirror 308, a P contact layer 309, a P electrode 310, a conversion layer 311, and a third mirror 312, wherein the substrate layer 301, the N contact layer 302, the first mirror 304, the functional layer 313, the second mirror 308, the P contact layer 309, the conversion layer 311, and the third mirror 312 are sequentially stacked; the first mirror 304 is an n-type Bragg mirror, the second mirror 308 is a p-type Bragg mirror, the third mirror 312 is an n-type Bragg mirror, the conversion layer 311 is a GaAs-based high bandgap type-II tunnel junction, and the conversion layer 311 is disposed between the second mirror 304 and the third mirror 312; the functional layer 313 includes a first oxidation limiting layer group 305, an active layer 306, anda second oxidation limiting layer group 307, the first oxidation limiting layer group 305 being a P-type limiting layer and being disposed between the active layer 306 and the first mirror 304, the second oxidation limiting layer group 307 being an N-type limiting layer and being disposed between the active layer 306 and the second mirror 308, the second oxidation limiting layer group 307 and the first oxidation limiting layer group 305 each comprising at least two layers of Al x The GaAs oxide layer, x is in the range of 0.94-1, the first oxidation limiting layer group 305 and the second oxidation limiting layer group 307 are symmetrically distributed relative to the active layer 306, carriers are transmitted to the active layer 306 for compound luminescence through the first oxidation limiting layer group 305 and the second oxidation limiting layer group 307, the substrate layer 301 and the N contact layer 302 form a first cylinder with the same diameter, the upper surface of the first cylinder forms a first table top, the first reflecting mirror 304, the functional layer 313, the second reflecting mirror 308 and the P contact layer 309 form a second cylinder with the same diameter, the upper surface of the second cylinder forms a second table top, the conversion layer 311 and the third reflecting mirror 312 form a third cylinder with the same diameter, the upper surface of the third cylinder forms a third table top, the first table top, the second table top and the third table top are coaxially arranged, the diameters of the N electrode 303 are sequentially reduced, the N electrode 303 is fixed on the first table top (the N contact layer 302 is connected with the N electrode 303), the P electrode 310 is fixed on the second table top (the P contact layer 309 is connected with the P electrode 310).
The design of the first mesa, the second mesa and the third mesa is convenient for the heat dissipation of laser, more importantly fixes N electrode 303 and P electrode 310 respectively at first mesa and second mesa, and the electric current does not pass through third mirror 312, has improved injection efficiency. The active layer 306 is provided with an oxidation limiting layer group and a multi-layer structure of the oxidation limiting layer group, so that the current can be better limited, and the injection efficiency of the current can be improved. In addition, as shown in fig. 1, the tunneling capability of the type-II tunnel junction is better than that of the type-I tunnel junction, and the embodiment adopts the type-II tunnel junction so that the same tunneling current only needs less supply bias, i.e. lower resistance.
Preferably, the second set of oxidation limiting layers 307 and the first set of oxidation limiting layers 305 each comprise 6 layers of Al x And a GaAs oxide layer.
The active layer 306 is a layer or active region in a semiconductor injection laser or light emitting diode that provides optical gain. The active layer 306 includes several sublayers, each of which may have its own lattice constant. The active layer 306 includes a plurality of quantum wells having compressively strained quantum well layers and generally tensile strained barrier layers. The tunnel junction converts the incoming electrons into holes that are injected into the active layer 306. Electrons are injected into the active layer 306 from the n-type side (side near the second oxidation limiting layer group 307) of the active layer 306, while holes are injected from the p-type side (side near the first oxidation limiting layer group 305). The recombination of electrons and holes in the active layer 306 produces photons, which causes the laser to operate.
The active layer 306 has an effective band gap configured to generate light of an lasing wavelength in response to charges injected from the tunnel junction, and by design, the active layer 306 may generate light of a short wavelength. A first mirror 304, which strongly reflects light of the lasing wavelength, is disposed away from the tunnel junction. The second mirror 308 is disposed away from the first mirror 304 and proximate to the tunnel junction. The third reflector 312 is positioned over the tunnel junction, and the second mirror 308 and the third mirror 312 largely reflect the light of the lasing wavelength generated by the active layer 306 disposed between the first mirror 304 and the second mirror 308. The optical path between the first mirror 304 and the second mirror 308, which has a predetermined relationship with the lasing wavelength, forms a vertical optical cavity of a Vertical Cavity Surface Emitting Laser (VCSEL). By design, the optical cavity may resonate at the lasing wavelength of the light generated by the active layer.
Specifically, the first oxidation limiting layer group 305 and the second oxidation limiting layer group 307 are provided with oxidation holes, the pore diameter of the oxidation holes ranges from 1 μm to 10 μm, and the thickness of each layer in the first oxidation limiting layer group 305 and the second oxidation limiting layer group 307 ranges from 10 nm to 30nm.
The conversion layer 311 according to this embodiment includes a P-doped layer 201 and an N-doped layer 202 sequentially connected from top to bottom, where the P-doped layer 201 is close to the third mirror 312, the N-doped layer 202 is close to the P-contact layer 309, and the band gap energy of the material forms a type-ii tunnel junction, which has a GaAs lattice constant, and the semiconductor material of the N-doped layer includes indium (In), gallium (Ga), and arsenic (As), and the semiconductor material of the P-doped layer includes indium (In), gallium (Ga), arsenic (As), and antimony (Sb).
The implementation isThe substrate layer 301, the N contact layer 302, the first mirror 304, the functional layer 313, the second mirror 308, the P contact layer 309, the conversion layer 311, and the third mirror 312 referred to in the example form an optical cavity. Light absorption is proportional to the intensity of the optical field, with less absorption at the standing wave node. In order to approach the ideal tunnel junction as closely as possible and minimize the series resistance of the VCSEL, the absorption is guaranteed to be minimal, the tunnel junction is located at the node of the standing wave of the optical field in the optical cavity by applying a low diffusion coefficient and highly doped material. In this embodiment extremely high n and p doping is obtained in the layer forming the tunnel junction, which is realized at the node of the standing wave of the optical field in the optical cavity. Specifically, the P-type doped layer 201 is a P-type doped material of InGaAsSb, and the N-type doped layer 202 is an N-type doped material of InGaAs; the doping atoms of the P-type doping layer 201 of the type-II tunnel junction are C, and the doping atoms of the N-type doping layer 202 are Te; the doping concentration of doping atoms in the P-type doped layer 201 and the N-type doped layer 202 of the type-II tunnel junction is higher than 1X10 19 cm 3 Is used for the doping level of (a).
The P-type contact layer 309 of this embodiment has a doping concentration higher than 3X10 18 cm 3 The P-type doped layer 201 of (2) realizes a metal ohmic structure and a laser cavity contact structure, the thickness of the P-type contact layer 309 is larger than 15nm, and the P-type contact layer 309 is arranged at the optical field node position. The N contact layer 302 according to the present embodiment also serves as a buffer layer.
The first mirror 304, the second mirror 308 and the third mirror 312 according to the present embodiment all use Al with gradually changed composition x Ga 1-x As Bragg reflectors, x is in the range of 0.1-1.
The substrate layer 301 according to this embodiment is an opaque substrate.
The GaAs-based high-speed vertical cavity surface emitting laser structure based on the type-ii tunnel junction according to the present embodiment employs an n-p-n junction, which is a type-ii high band gap tunnel junction having a heavily doped n-type layer and p-type layer, and a p-n junction formed of an active layer (active region quantum well structure) in the same manner as in the conventional VCSEL. When an electrical bias is applied forward to the p-n junction of the active layer, the same electrical bias appears as a reverse bias to the tunnel junction. Thus, the reverse biased tunnel junction for the VCSEL converts the hole current in the p-doped layer 201 into an electron current in the n-doped layer 202.
The preparation method of the GaAs-based high-speed vertical cavity surface emitting laser based on the type-II tunnel junction comprises the following steps:
1. a laser structure is provided comprising a substrate layer 301, an N contact layer 302, a first mirror 304, a functional layer 313, a second mirror 308, a P contact layer 309, a conversion layer 311, a third mirror 312, and N and P electrodes 303, 310.
2. The third reflector 312 and conversion layer 311 are etched to obtain a second mesa having a diameter of 18-30 μm, the GaAs-based tunnel junction being the same size as the second mesa. The second mesa is formed by ICP-RIE etching.
3.P contact layer 309 is plated with P electrode 310.
4. A first mesa is obtained from the etch of the contact layer 309 to the buffer layer 302, the first mesa being larger in size than the second mesa by a size of about +30 um. The second mesa is formed by ICP-RIE etching.
5. And forming oxidation limiting pore sizes with different sizes in the first oxidation limiting layer group and the second oxidation limiting layer group through a wet oxidation process, wherein the minimum pore radius size in the first oxidation limiting layer group and the second oxidation limiting layer group is smaller than 7 mu m.
N contact layer 302 is N electrode 303 plated.
The application principle of the GaAs-based high-speed vertical cavity surface emitting laser based on the type-II tunnel junction is as follows: the GaAs-based type-II high band gap tunnel junction and the upper and lower oxidation layer groups are used for a high-speed vertical cavity surface emitting laser, the type-II high band gap tunnel junction is used as a conversion layer, the second reflector 308 and the third reflector are connected, the current injection efficiency is optimized by combining the limitation of the double oxidation limiting layer groups on the current, the output power and the conversion efficiency of the device are improved, and the top-emitting cavity contact structure is adopted, so that the GaAs-based high-speed laser is suitable for the GaAs-based high-speed laser.
Claims (7)
1. A GaAs-based high-speed vertical cavity surface emitting laser based on a type-II tunnel junction is characterized by comprising a substrate layer, an N contact layer, an N electrode and a first reflection layerThe LED light source comprises a mirror, a functional layer, a second mirror, a P contact layer, a P electrode, a conversion layer and a third mirror, wherein the substrate layer, the N contact layer, the first mirror, the functional layer, the second mirror, the P contact layer, the conversion layer and the third mirror are sequentially stacked; the first reflector is an n-type Bragg reflector, the second reflector is a p-type Bragg reflector, the third reflector is an n-type Bragg reflector, the conversion layer is a GaAs-based high band gap type-II tunnel junction, and the conversion layer is arranged between the second reflector and the third reflector; the functional layer comprises a first oxidation limiting layer group, an active layer and a second oxidation limiting layer group, wherein the first oxidation limiting layer group is a P-type limiting layer and is arranged between the active layer and the first reflecting mirror, the second oxidation limiting layer group is an N-type limiting layer and is arranged between the active layer and the second reflecting mirror, and the second oxidation limiting layer group and the first oxidation limiting layer group both comprise at least two layers of Al x The GaAs oxide layer, x is in the range of 0.94-1, the first oxidation limiting layer group and the second oxidation limiting layer group are symmetrically distributed relative to the active layer, the carriers are transmitted to the active layer through the first oxidation limiting layer group and the second oxidation limiting layer group to be compositely emitted, the substrate layer and the N contact layer form a first cylinder with the same diameter, a first table top is formed on the upper surface of the first cylinder, a first reflecting mirror, a functional layer, a second reflecting mirror and a P contact layer form a second cylinder with the same diameter, a second table top is formed on the upper surface of the second cylinder, the conversion layer and the third reflecting mirror form a third cylinder with the same diameter, the upper surface of the third cylinder forms a third table top, the first table top, the second table top and the third table top are coaxially arranged, the diameters of the N electrode are sequentially reduced, the N electrode is fixed on the first table top, and the P electrode is fixed on the second table top.
2. The GaAs-based high-speed vertical cavity surface emitting laser based on a type-ii tunnel junction according to claim 1, wherein the second set of oxidation limiting layers and the first set of oxidation limiting layers each comprise 6 layers of Al x And a GaAs oxide layer.
3. The GaAs-based high-speed vertical cavity surface emitting laser based on a type-ii tunnel junction according to claim 1, wherein the first and second oxidation limiting layer groups are provided with oxidation holes having a hole diameter ranging from 1 to 10 μm, and each of the first and second oxidation limiting layer groups has a thickness ranging from 10 to 30nm.
4. The GaAs-based high-speed vertical cavity surface emitting laser of claim 1, wherein the conversion layer comprises a P-doped layer and an N-doped layer sequentially connected from top to bottom, the P-doped layer is adjacent to the third mirror, the N-doped layer is adjacent to the P-contact layer, the material bandgap energy forms a type-ii tunnel junction, the type-ii tunnel junction has a GaAs lattice constant, wherein the semiconductor material of the N-doped layer comprises indium, gallium, arsenic, and the semiconductor material of the P-doped layer comprises indium, gallium, arsenic, and antimony.
5. The GaAs-based high-speed vertical cavity surface emitting laser based on a type-ii tunnel junction according to claim 4, wherein the substrate layer, N contact layer, first mirror, functional layer, second mirror, P contact layer, conversion layer and third mirror form an optical cavity, the conversion layer is located at a node of a standing wave of an optical field in the optical cavity, the P-doped layer is a P-doped material of InGaAsSb, and the N-doped layer is an N-doped material of InGaAs; the doping atoms of the P-type doping layer of the type-II tunnel junction are C, and the doping atoms of the N-type doping layer are Te; the doping concentration of doping atoms in the P-type doping layer and the N-type doping layer of the type-II tunnel junction is higher than 1X10 19 cm -3 Is used for the doping level of (a).
6. The GaAs-based high-speed vertical cavity surface emitting laser based on a type-ii tunnel junction as claimed in claim 1, wherein the first mirror, the second mirror and the third mirror each employ compositionally graded Al x Ga 1-x As Bragg reflectors, x is in the range of 0.1-1.
7. The GaAs-based high-speed vertical cavity surface emitting laser based on a type-ii tunnel junction according to claim 1, wherein the substrate layer is an opaque substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210629622.5A CN115036789B (en) | 2022-06-06 | 2022-06-06 | GaAs-based high-speed vertical cavity surface emitting laser based on type-II tunnel junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210629622.5A CN115036789B (en) | 2022-06-06 | 2022-06-06 | GaAs-based high-speed vertical cavity surface emitting laser based on type-II tunnel junction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115036789A CN115036789A (en) | 2022-09-09 |
| CN115036789B true CN115036789B (en) | 2023-12-19 |
Family
ID=83122353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210629622.5A Active CN115036789B (en) | 2022-06-06 | 2022-06-06 | GaAs-based high-speed vertical cavity surface emitting laser based on type-II tunnel junction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115036789B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116868462A (en) * | 2023-03-16 | 2023-10-10 | 深圳瑞识智能科技有限公司 | VCSEL and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6906353B1 (en) * | 2003-11-17 | 2005-06-14 | Jds Uniphase Corporation | High speed implanted VCSEL |
| CN101192739A (en) * | 2006-12-01 | 2008-06-04 | 中国科学院半导体研究所 | Vertical cavity radiation laser including high adulteration tunnel structure |
| CN104577711A (en) * | 2013-10-24 | 2015-04-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vertical-cavity surface-emitting laser and manufacturing method thereof |
| CN112470352A (en) * | 2018-03-15 | 2021-03-09 | 通快光电器件有限公司 | Vertical cavity surface emitting laser device with integrated tunnel junction |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6931042B2 (en) * | 2000-05-31 | 2005-08-16 | Sandia Corporation | Long wavelength vertical cavity surface emitting laser |
-
2022
- 2022-06-06 CN CN202210629622.5A patent/CN115036789B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6906353B1 (en) * | 2003-11-17 | 2005-06-14 | Jds Uniphase Corporation | High speed implanted VCSEL |
| CN101192739A (en) * | 2006-12-01 | 2008-06-04 | 中国科学院半导体研究所 | Vertical cavity radiation laser including high adulteration tunnel structure |
| CN104577711A (en) * | 2013-10-24 | 2015-04-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vertical-cavity surface-emitting laser and manufacturing method thereof |
| CN112470352A (en) * | 2018-03-15 | 2021-03-09 | 通快光电器件有限公司 | Vertical cavity surface emitting laser device with integrated tunnel junction |
Non-Patent Citations (1)
| Title |
|---|
| Kenichiro Y ASHIKI等.《1.1- m-Range Low-Resistance InGaAs Quantum-Well Vertical-Cavity Surface-Emitting Lasers with a Buried Type-II Tunnel Junction》.《Japanese Journal of applied physics》.2007,第46卷(第21期),全文. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115036789A (en) | 2022-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6618410B1 (en) | Optoelectronic semiconductor component | |
| US5568499A (en) | Optical device with low electrical and thermal resistance bragg reflectors | |
| KR100558320B1 (en) | Asymmetric Distributed Bragg Reflector For Vertical Cavity Surface Emitting Lasers | |
| JPH06196681A (en) | Light-receiving-and-emitting integrated element | |
| CN113964649A (en) | Epitaxial structure of high-power vertical-cavity surface-emitting laser | |
| US6653163B2 (en) | Device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing such device | |
| CN115036789B (en) | GaAs-based high-speed vertical cavity surface emitting laser based on type-II tunnel junction | |
| US11955774B2 (en) | Elliptical multi-mesa laser structure | |
| CN114744484B (en) | high-power laser structure based on GaAs-based high-band-gap tunnel junction | |
| US7103080B2 (en) | Laser diode with a low absorption diode junction | |
| CN114552379B (en) | Resonant cavity, laser unit, laser and laser radar | |
| CN114552380B (en) | Resonant cavity, laser unit, chip, laser, forming method of resonant cavity and laser, and laser radar | |
| EP0877428A2 (en) | A device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing said device | |
| US8213474B2 (en) | Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption | |
| CN216162114U (en) | Resonant cavity, laser unit, laser and laser radar | |
| CN219535170U (en) | VCSEL epitaxial structure and VCSEL chip | |
| CN217444828U (en) | Vertical cavity surface emitting laser array and laser transmitter | |
| WO2023243298A1 (en) | Vertical cavity surface-emitting laser element, and array of vertical cavity surface-emitting laser elements | |
| CN111293585B (en) | Vertical cavity surface emitting laser, array and manufacturing method | |
| CN115810977A (en) | Resonant cavity, laser unit, laser and laser radar | |
| CN115313155A (en) | Multi-junction vertical cavity surface emitting laser of heterogeneous tunnel junction and preparation method thereof | |
| CN115441306A (en) | Strained quantum well vertical cavity surface emitting laser and preparation method and application thereof | |
| CN116207612A (en) | VCSEL epitaxial structure, manufacturing method thereof and VCSEL chip | |
| CN118198860A (en) | Gallium nitride-based vertical cavity surface emitting laser with string type multiple quantum well active layer structure | |
| CN118099928A (en) | Multi-chip addressable laser and device structure thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |