CN115036374A - Solar cell, manufacturing method thereof and photovoltaic module - Google Patents
Solar cell, manufacturing method thereof and photovoltaic module Download PDFInfo
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- 238000002161 passivation Methods 0.000 claims abstract description 304
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- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 20
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- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
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- 238000000034 method Methods 0.000 claims description 34
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- 238000006243 chemical reaction Methods 0.000 claims description 15
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- 239000003513 alkali Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
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Abstract
The embodiment of the invention provides a solar cell, a manufacturing method thereof and a photovoltaic module, wherein the solar cell comprises: the device comprises an N-type substrate and a P-type emitter positioned on the front surface of the substrate; the first passivation layer, the second passivation layer, the third passivation layer and the fourth passivation layer are sequentially stacked on the front surface of the substrate and in the direction far away from the P-type emitter, the first passivation layer comprises a silicon oxide material, and the second passivation layer comprises a first silicon oxynitride SiO x N y A material, the third passivation layer comprising silicon nitride Si m N n A material, the fourth passivation layer comprises a second silicon oxynitride SiO i N j A material, the second passivation layer including a first portion proximate the first passivation layer and a second portion proximate the third passivation layer, the first portion having a nitrogen atom concentration that is less than a nitrogen atom concentration of the second portion; a passivation contact structure on the rear surface of the substrate. Hair brushThe embodiment of the invention is beneficial to improving the light utilization rate of the solar cell.
Description
Technical Field
The embodiment of the invention relates to the field of photovoltaics, in particular to a solar cell, a manufacturing method of the solar cell and a photovoltaic module.
Background
The reflectivity or absorption of sunlight is a critical factor for cell efficiency. Currently, aluminum oxide/silicon nitride (AlO) is commonly used for passivating crystalline silicon solar cells in the industry x /SiN y ) The stack acts as an emitter passivation layer. The coating equipment and precursor gas sources (trimethylaluminum and the like) required for depositing the aluminum oxide material have high cost and are not beneficial to modern industrial mass production; the silicon nitride material has a high refractive index, which is not favorable for antireflection on the front surface of the cell, and after the packaging material such as ethylene-vinyl acetate (EVA) or Polyolefin (POE) is used, the appearance of the solar module is blue, which is not favorable for manufacturing a black module.
Therefore, it is desirable to develop a new N-type cell that is not an aluminum oxide passivation system and has low cost and high light utilization efficiency to replace the N-type cell of the aluminum oxide passivation system.
Disclosure of Invention
The embodiment of the invention provides a solar cell, a manufacturing method thereof and a photovoltaic module, which are beneficial to improving the sunlight utilization rate of the solar cell.
To solve the above problem, an embodiment of the present invention provides a solar cell, including: the device comprises an N-type substrate and a P-type emitter positioned on the front surface of the substrate; a first passivation layer, a second passivation layer, a third passivation layer and a fourth passivation layer sequentially stacked on the front surface of the substrate and in a direction away from the P-type emitter, wherein the first passivation layer comprises a silicon oxide materialThe second passivation layer comprises a first silicon oxynitride SiO x N y A material, the third passivation layer comprising silicon nitride Si m N n Material, the fourth passivation layer comprising a second silicon oxynitride SiO i N j A material, the second passivation layer including a first portion proximate the first passivation layer and a second portion proximate the third passivation layer, the first portion having a nitrogen atom concentration that is less than a nitrogen atom concentration of the second portion; a passivation contact structure on the rear surface of the substrate.
In addition, the concentration of nitrogen atoms in different regions of the second passivation layer increases in the direction of the substrate towards the third passivation layer.
And the second passivation layer has x/y epsilon [1.51, 2.58] and the second refractive index of the second passivation layer is 1.60-1.71.
In addition, the second passivation layer has a thickness of 1nm to 25nm in a direction perpendicular to the front surface of the substrate.
In addition, the nitrogen atom concentration of different regions in the third passivation layer increases in the direction of the substrate toward the fourth passivation layer.
In addition, m/n epsilon [3.12, 5.41] in the third passivation layer, and the third refractive index of the third passivation layer is 1.98-2.20.
In addition, i/j epsilon [1.98, 8.47] in the fourth passivation layer, and the fourth refractive index of the fourth passivation layer is 1.50-1.70.
Correspondingly, the embodiment of the invention also provides a solar module which comprises the solar cell.
Correspondingly, the embodiment of the invention also provides a manufacturing method of the solar cell, which comprises the following steps: providing an N-type substrate and a P-type emitter positioned on the front surface of the substrate; forming a first passivation layer, a second passivation layer, a third passivation layer and a fourth passivation layer which are sequentially stacked on the front surface of the substrate and in a direction far away from the P-type emitter, wherein the first passivation layer comprises a silicon oxide material, and the second passivation layer comprises a first silicon oxynitride SiO x N y A material, the third passivation layer comprising nitridationSilicon Si m N n A material, the fourth passivation layer comprises a second silicon oxynitride SiO i N j A material, the second passivation layer including a first portion proximate the first passivation layer and a second portion proximate the third passivation layer, the first portion having a nitrogen atom concentration that is less than a nitrogen atom concentration of the second portion; and forming a passivation contact structure on the rear surface of the substrate.
In addition, the process of forming the second passivation layer includes: introducing silane, laughing gas and ammonia gas into the reaction chamber, and performing a plasma vapor deposition process under the action of first pulse power to form a second passivation film containing silicon oxynitride material; wherein the flow ratio of the silane to the laughing gas is not less than 1/10, and the first pulse power is 30-40 mW/cm 2 (ii) a Introducing ammonia gas into the reaction chamber, and performing an ion implantation process of nitrogen ions on the second passivation film under the action of second pulse power to form a second passivation layer; wherein the second pulse power is 15-25 mW/cm 2 The ion implantation time is 300 s-600 s.
Compared with the prior art, the technical scheme provided by the embodiment of the invention has the following advantages:
in the technical scheme, the first part has lower nitrogen atom concentration, the material property is closer to the silicon oxide material in the first passivation layer, the second part has higher nitrogen atom concentration, and the material property is closer to the silicon nitride material in the third passivation layer, so that the second passivation layer, the adjacent first passivation layer and the third passivation layer have better lattice matching effect and lower interface defect density, and the optical loss at the interface of the film layer is reduced and the light utilization rate is improved; in addition, the silicon oxynitride material with relatively low refractive index is used as the fourth passivation layer, so that the refractive index difference between the outer layer of the solar cell and the packaging material is favorably reduced, the light reflection is reduced, the light utilization rate is improved, and the short-circuit current of the solar cell is improved.
In addition, in the direction of the substrate facing the fourth passivation layer, the nitrogen atom concentration in different areas in the third passivation layer is increased progressively, and the refractive index in different areas of the third passivation layer is decreased progressively, which is beneficial to improving the light utilization rate.
Drawings
One or more embodiments are illustrated by corresponding figures in the drawings, which are not to scale unless specifically noted.
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
FIG. 2 is a schematic view of a partial structure of the solar cell shown in FIG. 1;
fig. 3 is an external view schematically illustrating a solar module according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating a reflectivity variation of a solar cell according to an embodiment of the invention;
fig. 5 to 14 are schematic structural diagrams corresponding to steps of a method for manufacturing a solar cell according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in various embodiments of the invention, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments.
Referring to fig. 1 and 2, the solar cell includes: an N-type substrate 100 and a P-type emitter 111 on a front surface of the substrate 100; a first passivation layer 112, a second passivation layer 113, a third passivation layer 114 and a fourth passivation layer 115 sequentially stacked on the front surface of the substrate 100 in a direction away from the P-type emitter 111, wherein the first passivation layer 112 comprises a silicon oxide material, and the second passivation layer 113 comprises a first silicon oxynitride SiO x N y Material, the third passivation layer 114 comprising silicon nitride Si m N n Material, the fourth passivation layer 115 comprises a second silicon oxynitride SiO i N j Material, the second passivation layer 113 comprises a first portion 113a adjacent to the first passivation layer 112 and a second portion 113b adjacent to the third passivation layer 114, the first portion113a is less than the second portion 113 b; a passivation contact structure 125 on the rear surface of the substrate 100.
Wherein the first portion 113a contacts the first passivation layer 112, and the second portion 113b contacts the third passivation layer 114, and the first portion 113a and the second portion 113b have a certain depth in a direction perpendicular to the front surface of the substrate 100.
In some embodiments, the substrate 100 is a silicon substrate doped with N-type ions (e.g., a five-main-group element such as phosphorus), the front surface of the substrate 100 is a surface of the substrate 100 facing the sunlight, and the rear surface of the substrate 100 is a surface of the substrate 100 facing away from the sunlight; the P-type emitter 111 is located in at least a portion of the surface layer space of the substrate 100 facing the anode side, the P-type emitter 111 is doped with P-type ions (e.g., boron, etc.), and the P-type emitter 111 forms a PN junction with the N-type substrate 100.
The silicon substrate comprises monocrystalline silicon, polycrystalline silicon, amorphous silicon and microcrystalline silicon, the silicon oxide material in the first passivation layer 112 is formed by in-situ generation or separate deposition based on the silicon substrate, and the thickness of the first passivation layer 112 is 1-3 nm, for example, 1.5nm, 2nm or 2.5nm, in a direction perpendicular to the front surface of the substrate 100; in other embodiments, the material of the substrate may also be elemental carbon, an organic material, and a multi-component compound, including gallium arsenide, cadmium telluride, copper indium selenide, and the like.
In some embodiments, the nitrogen atom concentration in different regions of the second passivation layer 113 increases in the direction of the substrate 100 towards the third passivation layer 114, in other words, the first silicon oxynitride SiO-regions in different regions of the second passivation layer 113 x N y The x/y value of the material gradually decreases. Since the oxygen atom proportion in the first portion 113a is relatively large and the nitrogen atom proportion is relatively small, the material characteristics of the first portion 113a are closer to those of silicon oxide; since the ratio of oxygen atoms is relatively small and the ratio of nitrogen atoms is relatively large in the second portion 113b, the material characteristics of the second portion 113b are closer to those of silicon nitride.
Because the material characteristics of the silicon oxide material are between those of the silicon substrate and the first silicon oxynitride SiO x N y Between the materials, a first passivation layer 112 is disposed as a secondThe passivation layer 113 and the middle layer of the substrate 100 are provided, and the first portion 113a is provided with oxygen atoms with a high concentration, so that the matching between the second passivation layer 113 and the substrate 100 is further improved, the formation of an interface between film layers with a high defect density due to a large difference in film material characteristics is avoided, a good lattice matching characteristic is ensured between the substrate 100 and the first passivation layer 112, and between the first passivation layer 112 and the second passivation layer 113, light incidence loss and carrier transmission loss due to interface defects are reduced, and the photoelectric conversion efficiency is improved.
Correspondingly, the second portion 113b is provided with nitrogen atoms with a relatively high concentration, which is beneficial to enabling the second passivation layer 113 and the third passivation layer 114 to have a good lattice matching effect, reducing the density of interface state defects between the second passivation layer 113 and the third passivation layer 114, reducing sunlight incidence loss and carrier transmission loss caused by the interface defects, and improving the photoelectric conversion efficiency.
Taking the value of x/y as the first ratio, since the size of the first ratio of different regions in the second passivation layer 113 determines the size of the refractive index of the region, the range of the first ratio in the second passivation layer 113 needs to be defined based on the requirement of the second refractive index of the second passivation layer 113. Theoretically, the larger the first ratio, that is, the smaller the nitrogen atom concentration, the smaller the refractive index of the first silicon oxynitride material, and the smaller the first ratio, that is, the larger the nitrogen atom concentration, the larger the refractive index of the first silicon oxynitride material.
In some embodiments, the first ratio is adjusted to make the first silicon oxynitride material and the second passivation layer 113 have a relatively high second refractive index. In this way, when the fourth passivation layer 115 is subsequently introduced, the second refractive index of the second passivation layer 113 may be greater than or similar to the fourth refractive index of the fourth passivation layer 115, so as to improve the utilization efficiency of incident light and the photoelectric conversion efficiency of the solar cell; correspondingly, on the premise of ensuring the utilization efficiency of incident light, the fourth refractive index of the fourth passivation layer 115 has a relatively large optional range, namely, the selection range of materials of the fourth passivation layer 115 is favorably expanded, and the flexibility of the fourth refractive index of the fourth passivation layer 115, which is adjustable within a certain range, is improved, so that the refractive index of a packaging component of the solar cell is better adapted, the fourth passivation layer 115 can be further matched with the refractive index of the materials of the packaging component, the light reflection of the solar cell towards the sun surface is reduced, the absorption performance of the solar cell on sunlight of different wave bands is optimized, and the short-circuit current and the cell efficiency of the solar cell are improved.
Wherein the first ratio in the second passivation layer 113 is 1.51-2.58, and correspondingly, the second refractive index of the second passivation layer 113 determined by the first ratio is 1.60-1.71. Thus, not only the second passivation layer 113 and the adjacent film have better lattice matching, but also the second passivation layer 113 has higher incident light utilization rate, and the fourth passivation layer 115 has flexibility of adjusting the refractive index within a certain range.
The thickness of the second passivation layer 113 is related to the passivation effect of the second passivation layer 113 and the incident light utilization rate. Specifically, the thinner the thickness of the second passivation layer 113 is, the smaller the stress applied to the first passivation layer 112 by the second passivation layer 113 is, the lower the interface state defect density between the first passivation layer 112 and the second passivation layer 113 is, and the better the passivation effect of the second passivation layer 113 is; meanwhile, the thinner the thickness of the second passivation layer 113 is, the weaker the light trapping capability of the second passivation layer 113 is, the lower the light loss of the second passivation layer 113 is, and the higher the incident light utilization rate of the solar cell is; the thicker the thickness of the second passivation layer 113 is, the easier it is to adjust the nitrogen atom concentration in different regions in the second passivation layer 113, so as to improve the lattice matching with the adjacent film layers and reduce the optical loss.
Wherein the thickness of the second passivation layer 113 may be set to 1nm to 25nm, for example, 5nm, 10nm, 15nm, or 20nm, in a direction perpendicular to the front surface of the N-type substrate 100. In this way, it is beneficial to make the second passivation layer 113 have a weak light trapping capability, and make the surface layer opposite to the second passivation layer 113 have a large difference in nitrogen atom concentration, so as to improve the lattice matching property with the adjacent film layer.
The third passivation layer 114 is made of silicon nitride Si m N n Material composition of silicon nitride Si m N n The number of silicon atoms and the number of nitrogen atoms in the material have a second ratio, by adjusting the second ratioThe refractive index of the third passivation layer 114 can be adjusted according to the magnitude of the ratio.
In some embodiments, the second ratio is 3 to 5, specifically 3.12 to 5.41, such as 3.72, 4.32 or 4.92, and accordingly, the third refractive index of the third passivation layer 114 is 1.98 to 2.20, such as 2.05, 2.1 or 2.15. The silicon nitride with the atomic number ratio has higher refractive index, is beneficial to reducing the reflection and the emergence of light rays, enhances the absorption of visible light, is convenient for preparing dark blue and even black solar cells, and meets the requirements of black components.
It should be noted that the second ratio is set on the basis of the first ratio, so that under the influence of the surface charge of the second passivation layer 113, the third passivation layer 114 has a good hydrogen passivation effect, and the third refractive index of the third passivation layer 114 is greater than the second refractive index of the second passivation layer 113 and the fourth refractive index of the fourth passivation layer 115, and it is ensured that the second passivation layer 113 and the third passivation layer 114 as a whole have higher refractive indexes relative to the fourth passivation layer 115, thereby reducing reflection and emergence of light rays, and improving the photoelectric conversion efficiency of the solar cell.
The thickness of the third passivation layer 114 is related to the hydrogen passivation effect and the cost of the third passivation layer 114, and theoretically, the thicker the thickness, the stronger the hydrogen passivation effect, and meanwhile, the thicker the thickness, the slower the enhancement of the hydrogen passivation effect; further, the thicker the thickness, the higher the cost, and the thicker the package size of the solar cell.
In some embodiments, the thickness of the third passivation layer 114 is 40nm to 60nm, such as 45nm, 50nm, or 55nm, in a direction perpendicular to the N-type substrate 100. When the thickness of the third passivation layer 114 is in the range of 40nm to 60nm, the positive charges carried by the third passivation layer 114 can meet the requirement of interface hydrogen passivation, and the surface recombination rate of carriers can be reduced; in addition, the manufacturing cost of the third passivation layer 114 is reduced, and the package size of the solar cell is reduced.
It should be noted that the definition of the refractive index and the thickness of the third passivation layer 114 belongs to the overall definition of the third passivation layer 114, and actually, the third passivation layer 114 may be a single layer film or may be composed of multiple layers of films stacked in sequence. Specifically, the third passivation layer 114 may be formed by 2 to 5 sub-film layers, and in a direction toward the third passivation layer 114 of the substrate 100, the nitrogen atom concentration of different sub-film layers increases progressively, and the refractive index decreases progressively, and the refractive index of each sub-film layer satisfies the definition of the refractive index of the third passivation layer 114, so that the utilization rate of the incident light is further improved.
The fourth passivation layer 115 is made of second silicon oxynitride SiO i N j Material composition, second silicon oxynitride SiO i N j The number of oxygen atoms and the number of nitrogen atoms in the material have a third ratio, and the refractive index of the fourth passivation layer 115 can be adjusted by adjusting the third ratio.
In some embodiments, the third ratio is 1.98 to 8.47, such as 2.5, 5, or 6.5, and the fourth refractive index of the fourth passivation layer 115 is 1.50 to 1.70, such as 1.55, 1.60, or 1.65. In this way, it is beneficial to make the fourth refractive index of the fourth passivation layer 115 smaller than or close to the second refractive index of the second passivation layer 113, so as to improve the utilization efficiency of incident light and the photoelectric conversion efficiency of the solar cell; in addition, the fourth refractive index of the fourth passivation layer 115 is greater than the refractive index of the packaging material and less than the third refractive index of the third passivation layer 114, so that light reflection caused by too large difference between the refractive indexes of the solar cell surface material and the packaging material is avoided, absorption of light is enhanced, and preparation of a black or dark blue solar module is facilitated.
The packaging component material is usually a transparent material such as ethylene-vinyl acetate (EVA) or Polyolefin (POE), the refractive index of the material is generally in the range of 1.40-1.50, the refractive index difference with the silicon nitride material is large, for example, the refractive index of the third passivation layer 114 is 1.98-2.20, and the fourth passivation layer 115 with the refractive index at the middle value is provided, which is beneficial to enhancing the absorption of light. Compared with the conventional aluminum oxide/silicon nitride passivated antireflection layer, referring to fig. 3, the encapsulated solar module appears dark blue or even black under the irradiation of sunlight.
The ability of the solar cell to absorb light is mainly reflected on the refractive index and thickness of the third passivation layer 114 and the refractive index and thickness of the fourth passivation layer 115. Since the refractive index and thickness of the third passivation layer 114 and the refractive index of the fourth passivation layer 115 are determined, in order to further ensure that the solar cell has high light absorption capability, the thickness of the fourth passivation layer 115 may be set to be 40nm to 60nm, for example, 45nm, 50nm or 55 nm.
In the above embodiment, by disposing the first passivation layer 112 having material characteristics between the substrate 100 and the second passivation layer 113, the second passivation layer 113 and the third passivation layer 114 having the graded concentration of nitrogen atoms, and the fourth passivation layer 115 having the intermediate refractive index, incidence and absorption of sunlight of different wavelength bands by the solar cell are optimized, thereby improving the short-circuit current and the cell efficiency of the solar cell. Referring to fig. 4, compared to the conventional aluminum oxide/silicon nitride passivated antireflection layer, the improved passivation stack provided by the present application has lower reflectivity for the near-ultraviolet visible light band and the ultraviolet light band, for example, the reflectivity of the light with the wavelength of about 350nm is reduced from about 20% to about 5%, which is reduced by about 4 times, further, the average reflectivity of the light with the wavelength ranging from 350nm to 1050nm is reduced from 2.1% to 2.3% to 1.4% to 1.6%, and the improved passivation stack has higher light utilization rate; further, the invention provides a short-circuit current I of the solar cell sc Can be increased by about 30 mA.
In some embodiments, the passivation contact structure 125 includes at least: an interface passivation layer 121 and a field passivation layer 122 sequentially disposed in a direction away from the substrate 100. The interface passivation layer 121 is made of a dielectric material and is used for realizing interface passivation of the back surface of the substrate 100, for example, the interface passivation layer 121 is a tunneling oxide layer (e.g., a silicon oxide layer); the material of the field passivation layer 122 is a material that achieves a field passivation effect, such as a doped silicon layer, which may specifically be one or more of a doped polysilicon layer, a doped microcrystalline silicon layer, or a doped amorphous silicon layer. For an N-type silicon substrate 100, the field passivation layer 122 may be an N-type doped polysilicon layer.
In some embodiments, a fifth passivation layer 123 is further disposed on the surface of the field passivation layer 122 facing away from the substrate 100. The material of the fifth passivation layer 123 includes a material that performs an anti-reflection function, such as silicon nitride. The fifth passivation layer 123 may be a plurality of sub-film layers similar to the third passivation layer 114, that is, the refractive index of different sub-film layers gradually decreases in the direction of the substrate 100 toward the fifth passivation layer 123, and each sub-film layer is limited by the overall refractive index of the fifth passivation layer 123.
In addition, the solar cell further includes a first electrode 116 and a second electrode 124, the first electrode 116 is electrically connected to the P-type emitter 111, and the second electrode 124 is electrically connected to the field passivation layer 122 through the fifth passivation layer 123. In some embodiments, the first electrode 116 and/or the second electrode 124 may be formed by sintering and printing a conductive paste (silver paste, aluminum paste, or silver-aluminum paste).
In some embodiments, the first portion has a lower concentration of nitrogen atoms and material properties closer to those of the silicon oxide material in the first passivation layer, the second portion has a higher concentration of nitrogen atoms and material properties closer to those of the silicon nitride material in the third passivation layer, so that the second passivation layer and the adjacent first passivation layer and third passivation layer have better lattice matching effect and lower interface defect density, which is beneficial to reducing interface loss of sunlight and improving sunlight utilization rate; in addition, the silicon oxynitride material with relatively low refractive index is used as the fourth passivation layer, so that the difference of the refractive indexes between the fourth passivation layer and the packaging material is favorably reduced, the light reflection is reduced, the light utilization rate is improved, and the short-circuit current of the solar cell is improved.
Correspondingly, the embodiment of the invention also provides a solar module, which comprises the solar cell, wherein the solar cell is provided with a P-type emitter, and a non-aluminum oxide passivation system is adopted, compared with the combination of an N-type emitter and an aluminum oxide passivation system, the solar module provided by the embodiment of the invention has lower light reflectivity and lower light loss, and finally presents higher photoelectric conversion efficiency and larger short-circuit current.
Correspondingly, the embodiment of the invention also provides a manufacturing method of the solar cell, which can be used for manufacturing the solar cell.
Referring to fig. 5 to 7, an N-type substrate 100 is provided and double-sided texturing is performed to form a P-type emitter 111.
Specifically, the N-type substrate 100 is cleaned, and a pyramid textured surface is prepared by adopting a wet chemical etching method, wherein the pyramid textured surface can reduce the reflection of the surface of the substrate 100 to light, so that the absorption utilization rate of the substrate 100 to light is increased, and the conversion efficiency of the solar cell is improved; in addition, the texture surface can be prepared by adopting a mature production line alkali texture surface process to form a 45-degree regular pyramid texture surface.
After double-sided texturing, boron diffusion treatment is carried out on the front surface of the substrate 100 to form a P-type emitter 111, the P-type emitter 111 occupies partial surface space of the substrate 100 towards the positive side, and the P-type emitter 111 and the substrate 100 form a PN junction.
It should be noted that the boron diffusion process may also generate unnecessary borosilicate glass on the front surface, the back surface and the side surface of the substrate 100, and the borosilicate glass may protect the substrate 100 to a certain extent, so as to prevent some process from damaging the surface of the substrate 100. In other words, unnecessary borosilicate glass may be used as a mask layer for the substrate 100.
Referring to fig. 8, a planarization process (e.g., polishing) is performed on the rear surface of the substrate 100.
The back surface is the side of the solar cell that faces away from the sun, and the planarization process can form the flat surface needed for deposition of the back surface film layer. The borosilicate glass of the rear surface is removed together during the planarization process.
Referring to fig. 9 and 10, an interface passivation layer 121 and a field passivation layer 122 are formed to constitute a passivation contact structure.
In some embodiments, the interface passivation layer 121 is formed using a deposition process, and specifically, the material of the interface passivation layer 121 includes silicon oxide, and the deposition process includes a chemical vapor deposition process; in other embodiments, the interface passivation layer may be formed by an in-situ generation process, specifically, the interface passivation layer may be generated in situ on the basis of the silicon substrate by a thermal oxidation process, a nitric acid passivation process, or the like.
In some embodiments, after forming the interface passivation layer 121, intrinsic polysilicon is deposited to form a polysilicon layer, and phosphorus ions are doped by means of ion implantation and source diffusion to form an N-type doped polysilicon layer, which serves as the field passivation layer 122.
When the interface passivation layer 121 and the field passivation layer 122 are formed by using a deposition process, since the front surface has borosilicate glass as a mask layer to protect the front surface of the substrate 100, the deposition region does not need to be limited to the rear surface by the mask during the deposition process, and the boric acid glass on the front surface and the silicon oxide and the polysilicon deposited on the front surface can be simultaneously removed by using the same process. Therefore, an additional mask is not required to be arranged, so that the process steps are reduced, the process flow is shortened, and the process cost is reduced.
In other embodiments, when the interfacial passivation layer is formed using an in-situ generation process, only the polysilicon is deposited on the borosilicate glass surface of the front surface of the substrate.
Referring to fig. 11, a first passivation layer 112 is formed on the front surface of the substrate 100.
In some embodiments, before forming the first passivation layer 112, it is necessary to remove the excess borosilicate glass, silicon oxide, and polysilicon around the front surface of the substrate 100; in other embodiments, the excess borosilicate glass and polysilicon around the front surface of the substrate need to be removed before the first passivation layer is formed.
In some embodiments, after removing the excess material, oxidizing at 450 to 500 ℃ for 15 to 30min in an oxygen-containing atmosphere to form an ultra-thin silicon oxide layer having a thickness of 1 to 3nm on the front surface of the substrate 100 as the first passivation layer 112; in other embodiments, the process for forming the ultra-thin silicon oxide layer further includes natural oxidation, deposition process, ozone oxidation, or nitric acid passivation.
Referring to fig. 12, a second passivation layer 113 is formed on the surface of the first passivation layer 112.
In some embodiments, the second passivation layer 113, the third passivation layer 114, and the fourth passivation layer 115 are sequentially deposited on the surface of the first passivation layer 112 using a Plasma Enhanced Chemical Vapor Deposition (PECVD) process. Taking tubular PECVD as an example, the deposition temperature of different passivation layers is generally set to 450-500 ℃.
Specifically, formThe process steps of the second passivation layer 113 include: introducing silane, laughing gas and ammonia gas into the reaction chamber, and performing a plasma vapor deposition process under the action of first pulse power to form a second passivation film containing silicon oxynitride material; wherein the flow ratio of the silane to the laughing gas is not less than 1/10, and the first pulse power is 30-40 mW/cm 2 (ii) a Introducing ammonia gas into the reaction chamber, and performing an ion implantation process of nitrogen ions on the second passivation film under the action of second pulse power to form a second passivation layer 113; wherein the second pulse power is 15-25 mW/cm 2 The ion implantation time is 300 s-600 s. The pulse power is a unit area pulse power.
The second passivation layer 113 includes a first portion 113a close to the first passivation layer 112 and a second portion 113b away from the first passivation layer 112, and through the above process, the concentration of nitrogen atoms in the first portion 113a may be made smaller than that in the second portion 113b, specifically, the concentration of nitrogen ions in different regions in the second passivation layer 113 increases in a direction toward the third passivation layer 114 from the substrate 100, so that the second passivation layer 113 has a higher lattice matching characteristic with the first passivation layer 112 and a subsequently formed third passivation layer.
Referring to fig. 13, a third passivation layer 114 covering a surface of the second passivation layer 113 is formed.
In some embodiments, the process steps of forming the third passivation layer 114 include: introducing silane and ammonia gas into the reaction chamber, and performing a plasma vapor deposition process under the action of a third pulse power to form a third passivation layer 114 containing a silicon nitride material; wherein the flow ratio of silane to ammonia gas is 1/10-1/5, and the third pulse power is 30-40 mW/cm 2 . The thickness of the third passivation layer 114 is 40nm to 60nm in a direction perpendicular to the front surface of the substrate 100, and the overall refractive index of the third passivation layer 114 is 2.00 to 2.10, for example, 2.25, 2.5, or 2.75.
In some embodiments, the process equipment for forming the second passivation layer 113 is the same as the process equipment for forming the third passivation layer 114, and no additional equipment needs to be introduced to form the aluminum oxide layer, which is beneficial to reducing hardware cost.
Referring to fig. 14, a fourth passivation layer 115 is formed to cover a surface of the third passivation layer 114, and a fifth passivation layer 123 is formed on a surface of the field passivation layer 122 facing away from the substrate 100.
In some embodiments, the process steps of forming the fourth passivation layer 115 include: introducing silane, laughing gas and ammonia gas into the reaction chamber, and performing a plasma vapor deposition process under the action of fourth pulse power to form a fourth passivation layer 115 containing silicon oxynitride material; wherein the flow ratio of the silane to the laughing gas is not less than 1/10, and the fourth pulse power is 25-40 mW/cm 2. The thickness of the fourth passivation layer 115 is 40nm to 60nm in a direction perpendicular to the front surface of the substrate 100, and the overall refractive index of the fourth passivation layer 115 is 1.50 to 1.70, for example, 1.55, 1.60, or 1.65.
In some embodiments, the fifth passivation layer 123 may be divided into a plurality of sub-layers, for example, 2 to 4 sub-layers, and the refractive indexes of the sub-layers sequentially increase in a direction of the fifth passivation layer 123 toward the substrate 100, which is beneficial to improving the antireflection effect of the solar cell, so that the rear surface of the solar cell exhibits a completely black effect. The material of the fifth passivation layer 123 includes silicon nitride.
Referring to fig. 1, a first electrode 116 and a second electrode 124 are formed.
After the fifth passivation layer 123 is formed, a metallization process, including a screen printing process and a high temperature sintering process, is performed to form the first electrode 116 connected to the emitter 111 and the second electrode 124 connected to the field passivation layer 122.
In some embodiments, the first portion has a lower concentration of nitrogen atoms and material properties closer to those of the silicon oxide material in the first passivation layer, the second portion has a higher concentration of nitrogen atoms and material properties closer to those of the silicon nitride material in the third passivation layer, so that the second passivation layer and the adjacent first passivation layer and third passivation layer have better lattice matching effect and lower interface defect density, which is beneficial to reducing interface loss of sunlight and improving sunlight utilization rate; in addition, the silicon oxynitride material with relatively low refractive index is used as the fourth passivation layer, so that the difference of the refractive indexes between the fourth passivation layer and the packaging material is favorably reduced, the light reflection is reduced, the light utilization rate is improved, and the short-circuit current of the solar cell is improved.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples of practicing the invention, and that various changes in form and detail may be made therein without departing from the spirit and scope of the invention in practice. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A solar cell, comprising:
the device comprises an N-type substrate and a P-type emitter positioned on the front surface of the substrate;
the first passivation layer, the second passivation layer, the third passivation layer and the fourth passivation layer are sequentially stacked on the front surface of the substrate and in the direction far away from the P-type emitter, the first passivation layer comprises a silicon oxide material, and the second passivation layer comprises a first silicon oxynitride SiO x N y Material, the third passivation layer comprising silicon nitride Si m N n Material, the fourth passivation layer comprising a second silicon oxynitride SiO i N j A material, the second passivation layer including a first portion proximate the first passivation layer and a second portion proximate the third passivation layer, the first portion having a nitrogen atom concentration that is less than a nitrogen atom concentration of the second portion;
a passivation contact structure on the rear surface of the substrate.
2. The solar cell of claim 1, wherein the concentration of nitrogen atoms in different regions of the second passivation layer increases in a direction of the substrate toward the third passivation layer.
3. The solar cell according to claim 1 or 2, wherein the second passivation layer has a second refractive index of 1.60 to 1.71 in x/y e [1.51, 2.58 ].
4. The solar cell of claim 1, wherein the second passivation layer has a thickness of 1nm to 25nm in a direction perpendicular to the front surface of the substrate.
5. The solar cell of claim 1, wherein the concentration of nitrogen atoms in different regions of the third passivation layer increases in a direction from the substrate toward the fourth passivation layer.
6. The solar cell of claim 5, wherein the third passivation layer has a third refractive index of 1.98-2.20 in m/n e [3.12, 5.41 ].
7. The solar cell according to claim 1 or 6, wherein i/j e [1.98, 8.47] in the fourth passivation layer has a fourth refractive index of 1.50 to 1.70.
8. A photovoltaic module comprising the solar cell of any one of claims 1 to 7.
9. A method for manufacturing a solar cell, comprising:
providing an N-type substrate and a P-type emitter positioned on the front surface of the substrate;
forming a first passivation layer, a second passivation layer, a third passivation layer and a fourth passivation layer which are sequentially stacked on the front surface of the substrate and in the direction far away from the P-type emitter, wherein the first passivation layer comprises a silicon oxide material, and the second passivation layer comprises a first silicon oxynitride SiO x N y Material, the third passivation layer comprising silicon nitride Si m N n Material, the fourth passivation layer comprising a second silicon oxynitride SiO i N j A material, the second passivation layer including a first portion adjacent the first passivation layer and a second portion adjacent the second passivation layerA second portion of the triple passivation layer, the first portion having a nitrogen atom concentration less than a nitrogen atom concentration of the second portion;
and forming a passivation contact structure on the rear surface of the substrate.
10. The method for manufacturing a solar cell according to claim 9, wherein the process step for forming the second passivation layer comprises:
introducing silane, laughing gas and ammonia gas into the reaction chamber, and performing a plasma vapor deposition process under the action of first pulse power to form a second passivation film containing silicon oxynitride material; wherein the flow ratio of the silane to the laughing gas is not less than 1/10, and the first pulse power is 30-40 mW/cm 2 ；
Introducing ammonia gas into the reaction chamber, and performing an ion implantation process of nitrogen ions on the second passivation film under the action of second pulse power to form the second passivation layer; wherein the second pulse power is 15-25 mW/cm 2 The ion implantation time is 300 s-600 s.
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