CN115000149A - Epitaxial structure of gallium nitride device and preparation method - Google Patents
Epitaxial structure of gallium nitride device and preparation method Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 123
- 238000002360 preparation method Methods 0.000 title description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 107
- 239000010703 silicon Substances 0.000 claims abstract description 107
- 239000000758 substrate Substances 0.000 claims abstract description 106
- 230000004888 barrier function Effects 0.000 claims abstract description 58
- 230000000737 periodic effect Effects 0.000 claims abstract description 22
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 29
- 229910052799 carbon Inorganic materials 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 229910002704 AlGaN Inorganic materials 0.000 claims description 19
- 239000002019 doping agent Substances 0.000 claims description 16
- 150000002902 organometallic compounds Chemical class 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000002131 composite material Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 239000011777 magnesium Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- -1 AlInGaN Inorganic materials 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 33
- 239000013078 crystal Substances 0.000 abstract description 16
- 239000000463 material Substances 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 25
- 230000008569 process Effects 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000005259 measurement Methods 0.000 description 9
- 239000002210 silicon-based material Substances 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 5
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 4
- 230000036760 body temperature Effects 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 208000032750 Device leakage Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a gallium nitride epitaxial structure, and belongs to the technical field of semiconductors. The high-impedance silicon substrate comprises a silicon substrate, wherein a buffer layer is epitaxially grown on the silicon substrate, a high-impedance layer with a periodic structure is epitaxially grown on the buffer layer, and the structure of each period of the high-impedance layer is formed by unintentionally doped Al y Ga (1‑y) N, intentionally doped GaN layer, Al x Ga (1‑x) N is formed by sequential growth, wherein x is 0.2-0.4, and y is 0.6-0.8; an unintentional doped gallium nitride layer is epitaxially grown on the high-resistance layer; the barrier layer is epitaxially grown on the unintended doped gallium nitride layer, and dislocation can be bent in the high-impedance layer through the periodic structure of the two crystal lattices of the high-impedance layer with deviation and the material alternation, so that dislocation defect caused by lattice mismatch is reduced and extended to the barrier layer, and leakage current and breakdown of the device caused by more defects can be effectively relievedThe characteristic problem.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to an epitaxial structure of a gallium nitride device and a preparation method thereof.
Background
In the past decades, silicon plays an extremely important role as an important semiconductor basic material in the development of electronic integrated circuits and discrete devices, however, with the arrival of the mole limit of silicon materials, due to the limitation of the material characteristics, the application of the silicon material in higher voltage and higher frequency occasions is mainly restricted by the low forbidden band width and the electronic drift rate, and the difficulty of further reducing the circuit size is increased; under the conditions, gallium nitride is taken as a third-generation semiconductor material, and has a wider forbidden bandwidth (Eg: 3.4eV and Eg: 1.12eV) and a higher electron drift rate (the electron drift rate of gallium nitride is 2.5 times that of silicon), so that the gallium nitride has a higher breakdown electric field intensity, is suitable for preparing high-voltage high-frequency power devices, and is an ideal material in the emerging fields of electric automobiles, 5G base stations, satellites and the like.
Although gallium nitride is an excellent semiconductor material, at present, due to the great difficulty in material preparation, large-size commercialized gallium nitride single crystals are difficult to obtain, and gallium nitride devices cannot be obtained in a homoepitaxy mode, heteroepitaxy is the most common method in the industry at present by adopting a silicon material as a substrate for epitaxial growth of the gallium nitride devices, but the lattice mismatch between the silicon material and the gallium nitride material is very high and reaches-16.9%, the high lattice mismatch can cause high defect density in the devices, and leakage channels formed by the defects cause device performance failure and influence the breakdown characteristics of the devices.
The inventor thinks that a large amount of dislocation defects can be introduced into the gallium nitride device due to large lattice mismatch between a silicon material and the gallium nitride material, and the defects extend from the substrate side to the barrier layer to generate more leakage channels and greatly influence the working performance of the device.
It should be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art.
Disclosure of Invention
The inventor finds that a large amount of dislocation defects, especially longitudinally extending dislocation lines, are introduced into the gallium nitride device due to the large lattice mismatch between the silicon material and the gallium nitride material, and the dislocation defects generate more leakage channels extending from the substrate side to the barrier layer, thereby having a large influence on the operating performance of the device.
In view of at least one of the above technical problems, the present disclosure provides an epitaxial structure of a gallium nitride device and a method for manufacturing the same, and the specific technical solution is as follows:
a gallium nitride epitaxial structure comprises a silicon substrate, wherein a buffer layer is epitaxially grown on the silicon substrate, a high-impedance layer with a periodic structure is epitaxially grown on the buffer layer, and the structure of each period of the high-impedance layer is formed by unintentionally doped Al which is unintentionally doped y Ga (1-y) N, intentionally doped GaN layer, Al x Ga (1-x) N is formed by sequential growth, wherein x is 0.2-0.4, and y is 0.6-0.8; an unintended doped gallium nitride layer is epitaxially grown on the high-resistance layer; the barrier layer is epitaxially grown on the unintended doped gallium nitride layer, and dislocation can be bent in the high-impedance layer through the periodic structure of the two crystal lattices of the high-impedance layer with deviation and material alternation, so that dislocation defects caused by lattice mismatch are reduced and extend to the barrier layer, and the problems of leakage current and breakdown characteristics of the device caused by more defects can be effectively solved.
A preparation method of a gallium nitride semiconductor device comprises the gallium nitride epitaxial structure, and comprises the following steps: selecting a silicon substrate as an epitaxial substrate, using a metal organic compound deposition system as an epitaxial growth system, adjusting the temperature of a reaction chamber of the metal organic compound deposition system to 1000-1100 ℃, and performing high-temperature cleaning on the silicon substrate by using hydrogen as atmosphere gas; then pre-introducing aluminum on the silicon substrate, wherein the flow and the time of the aluminum are a certain calculated value, and growing a buffer layer above the silicon substrate after the pre-introducing is finished; adjusting the temperature of a reaction chamber of a metal organic compound deposition system to 900-1050 ℃, the pressure in the reaction chamber to 50-100 mbar, V/III to 5000-30000, and using C 2 H 4 As the carbon dopant, the doping concentration of carbon is represented by C 2 H 4 Accurately controlling the flowmeter, and growing a high-impedance layer with a periodic structure on the buffer layer; then growing an unintended doped gallium nitride layer on the high-impedance layer; a barrier layer is then grown over the unintentionally doped gallium nitride layer.
Compared with the prior art, the invention has the following beneficial effects:
1. the high-impedance layer is a periodic structure composed of three materials with different lattice constants, so that dislocation defects are bent in the high-impedance layer, the original penetration path is changed by the defects, the defects are developed from a longitudinal direction to a transverse inclined path, and the high-impedance layer is finally cut off at a certain position, so that the number of the dislocation defects of the barrier layer serving as a functional area of the device is reduced, the probability of further introducing new dislocation defects is reduced, leakage channels caused by the defects are reduced, the device leakage phenomenon is improved, the device can be suitable for a higher voltage environment, and the breakdown characteristic of the device is improved.
2. Dislocation defects are effectively reduced, the dislocation defects extend to the barrier layer and extend to the whole wafer, the yield in the wafer of the gallium nitride radio-frequency device prepared from the single wafer is obviously improved, and the requirement of large-scale commercial production can be met.
Drawings
FIG. 1 is a schematic diagram of one period in the high impedance layer of example 1 in the structure of the present invention;
fig. 2 is a schematic diagram of an epitaxial structure of example 1 in the structure of the present invention.
The numbering in the figures illustrates: 101. a silicon substrate; 201. a buffer layer; 301. a high-resistance layer; 401. unintentionally doping the gallium nitride layer; 501. a barrier layer; 601. the p-type gallium nitride layer is intentionally doped.
The specific implementation mode is as follows:
for better understanding of the purpose, structure and function of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments.
The numbering of the components as such is used herein only to distinguish between the objects represented and not to have any sequential or technical meaning. In the present disclosure, the term "connected", unless otherwise specified, includes both direct and indirect "connections". In the description of the present application, it is to be understood that the positional terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate positional or positional relationships based on those shown in the drawings, and are only for convenience of description and brief description, but do not indicate or imply that the referred devices or units must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
As shown in fig. 1 to 2, an epitaxial structure of a gan device is designed, which includes a silicon substrate 101, the silicon substrate 101 is suitable for gan wafers with diameters in the range of 2-12 inches, a buffer layer 201 is epitaxially grown on the silicon substrate 101, a high-impedance layer 301 with a periodic structure is epitaxially grown on the buffer layer 201, the structure of each period of the high-impedance layer 301 is formed by unintentionally doped Al which is unintentionally doped y Ga (1-y) N, intentionally doped GaN layer, Al x Ga (1-x) N is formed by sequential growth, wherein x is 0.2-0.4, and y is 0.6-0.8; an unintentionally doped gallium nitride layer 401 is epitaxially grown on the high resistance layer 301; a barrier layer 501 is epitaxially grown over the unintentionally doped gallium nitride layer 401.
A preparation method of an epitaxial structure of a gallium nitride device is disclosed, and the preparation method comprises the following steps: selecting a silicon substrate 101 as an epitaxial substrate, using a metal organic compound deposition system as an epitaxial growth system, adjusting the temperature of a reaction chamber of the metal organic compound deposition system to 1000-1100 ℃, and using hydrogen as atmosphere gas to perform high-temperature cleaning on the silicon substrate 101; then, pre-introducing aluminum on the silicon substrate 101, wherein the pre-introducing aluminum is used for avoiding chemical reaction between ammonia gas and the silicon substrate, in the first step of the epitaxial process, a thin aluminum material layer is grown on the silicon substrate in a mode of introducing trimethylaluminum into a reaction chamber at a high temperature in advance, so that the direct contact of the ammonia gas and the silicon substrate is prevented in the subsequent buffer layer growth process, and the ammonia gas and the thin aluminum react to generate an aluminum nitride material which becomes a part of a buffer layer; the flow rate and time of the aluminum areA calculated value, after completing the pre-passing, growing a buffer layer 201 above the silicon substrate 101; adjusting the temperature of a reaction chamber of a metal organic compound deposition system to be 900-1050 ℃, adjusting the pressure in the reaction chamber to be 50-100 mbar, and introducing hydrogen, ammonia and an organic metal source into a silicon substrate in the reaction chamber of the metal organic compound chemical vapor deposition system, wherein the ammonia is used as a group V source material, trimethyl gallium and trimethyl aluminum are used as group III raw materials, the V/III is 5000-30000, and C is used 2 H 4 As the carbon dopant, the doping concentration of carbon is represented by C 2 H 4 The flow meter is precisely controlled, and a high-impedance layer 301 with a periodic structure is grown on the buffer layer 201; then growing an unintended doped gallium nitride layer 401 on the high-impedance layer 301; a barrier layer 501 is then grown over the unintentionally doped gallium nitride layer 401.
The working principle is as follows: the gallium nitride device structure mainly comprises a silicon substrate, a buffer layer, a high-impedance layer, an unintentionally doped gallium nitride layer, a barrier layer/intentionally doped p-type gallium nitride layer or a barrier layer; dislocation defects extending from the interface of the silicon substrate can penetrate through each structural layer, the high-impedance layer with the sandwich-type periodic structure can enable the dislocation defects to be bent in the high-impedance layer, further enable the defects to change the original penetrating path, enable the defects to develop from a longitudinal direction to a transverse inclined path and finally cut off at a certain position of the high-impedance layer, and accordingly enable the number of the dislocation defects of the barrier layer serving as the functional area of the gallium nitride device to be reduced x Ga (1-x) N/c-GaN/Al y Ga (1-y) The periodic structure of N can reduce the occurrence probability that the barrier layer further introduces new dislocation defects, and leakage channels caused by the defects are reduced, so that the leakage phenomenon of the gallium nitride device is improved, the effect of blocking leakage current in the vertical direction by the intentionally doped gallium nitride layer doped with carbon in the middle is ensured, and the gallium nitride device can be suitable for a higher voltage environment, so that the breakdown characteristic of the gallium nitride device is improved.
In the above embodiment, 3 examples are listed to realize the above technical solution:
example 1
In this embodiment, a silicon substrate 101 with a crystal orientation of < 111 > is selected as an epitaxial substrate;
the resistivity of the silicon substrate is determined by the dosage of the dopant in the process of single crystal growth, the more dosage is used in general, the lower the resistivity is, the linear relation is formed, and the resistivity of the silicon substrate disclosed by the invention is 1 milliohm centimeter;
the oxygen concentration of the silicon substrate is determined by the process conditions used in the single crystal growth process, and mainly comprises the following equipment process parameters: the crystal bar pulling speed, the crystal bar rotating speed, the crucible rotating speed, the furnace body temperature gradient, the furnace body temperature, the pressure and the oxygen content in the Ar atmosphere gas are set by accurately controlling corresponding parameters, so that the oxygen concentration of the finally prepared silicon single crystal bar is in the range of the claims, and the oxygen concentration is 15 ppma;
the carbon concentration of the silicon substrate is determined by the process conditions in the single crystal growth process, and the following equipment process parameters are mainly adopted: the carbon concentration of the finally prepared silicon single crystal rod is in the range of the claims by accurately controlling the setting of corresponding parameters, such as the crucible rotating speed, the furnace body temperature and the pressure, and the carbon concentration of the finally prepared silicon single crystal rod is 0.2 ppma;
the thickness of the silicon substrate is determined by the processes of slicing, grinding and polishing, corresponding equipment parameters are adjusted to reach a required final thickness value, and the thickness of the silicon substrate is 1150 mu m;
growing a gallium nitride wafer by a metal organic compound vapor deposition MOCVD system, wherein the warpage BOW measurement shows that the warpage is 10 mu m, and the crack display value of the wafer edge measured by the Candela surface is 78ea and the longcrack display value is 1.5 mm;
silicon substrate as comparative 1: compared with the silicon substrate which is applied to the growth of an 8-inch silicon-based gallium nitride wafer, the silicon substrate has the advantages that the resistivity of 12 milliohm centimeters, the oxygen concentration of 8ppma, the carbon concentration of 0.3ppma and the thickness of 1150 micrometers, the warping degree of the silicon substrate is reduced by over 90 percent, the number of the craks on the edge of the wafer and the length of the longcraks are greatly reduced, the requirements of the gallium nitride wafer can be completely met, and the yield is over 95 percent.
The silicon substrate of comparison 2 is applied to a silicon substrate grown on an 8-inch silicon-based gallium nitride wafer, the silicon substrate has a resistivity of 1 milliohm cm, an oxygen concentration of 20ppma, a carbon concentration of 0.2ppma and a thickness of 1150 μm, the gallium nitride wafer is grown by a metal organic compound vapor deposition MOCVD system, the warp BOW measurement shows 24 μm, the wafer edge crack measurement value of Candela surface shows 145ea, and the longcrack display value shows 3.7mm, and the data of the warp BOW, the wafer edge crack and the longcrack are improved on the basis of comparison 1, but the effect is not as good as that of the disclosed scheme.
The silicon substrate used as the comparison 3 is applied to a silicon substrate grown on an 8-inch silicon-based gallium nitride wafer, the resistivity of the silicon substrate is 1 milliohm centimeter, the oxygen concentration is 24ppma, the carbon concentration is 0.2ppma, and the thickness is 1150 micrometers, the gallium nitride wafer is grown by a metal organic compound vapor deposition MOCVD system, a large amount of cracking cracks can be obviously seen on the surface of the wafer using the silicon substrate with the oxygen concentration of 24ppma through a microscope, because the mechanical strength of the silicon substrate is too high, the cracking is caused by the lattice relaxation phenomenon generated by the stress release in the epitaxial growth process, and the preparation of a gallium nitride device cannot be carried out;
as a comparative example 4, the silicon substrate was applied to a silicon substrate grown on an 8-inch si-based gan wafer, the silicon substrate had a resistivity of 1 mm cm, an oxygen concentration of 10ppma, a carbon concentration of 0.2ppma, and a thickness of 1150 μm, and the warp BOW measurement of the gan wafer using the silicon substrate having an oxygen concentration of 10ppma showed 47 μm, the wafer edge crack measurement of the Candela surface showed 170ea, and the wafer edge crack measurement showed 7.9mm, and the data of the warp BOW, the wafer edge crack, and the longcrack were improved on the basis of the comparative example, but the effects were not as good as those disclosed herein.
The silicon substrate used as the comparison 5 is applied to a silicon substrate grown on an 8-inch silicon-based gallium nitride wafer, the resistivity of the silicon substrate is 0.3 milliohm cm, the oxygen concentration is 10ppma, the carbon concentration is 0.2ppma, and the thickness is 1150 micrometers, the gallium nitride wafer is grown by a metal organic compound vapor deposition MOCVD system, a microscope can obviously see that a large number of cracks exist on the surface of the gallium nitride wafer using the silicon substrate with the resistivity of 0.3 milliohm cm, because the mechanical strength of the silicon substrate is too high, the crack is generated due to the fact that the stress is released in the epitaxial growth process, the lattice relaxation phenomenon occurs, and the preparation of a gallium nitride device cannot be carried out;
as a comparative example 6, the silicon substrate was applied to a silicon substrate grown on an 8-inch si-based gan wafer, the silicon substrate had a resistivity of 10 mm cm, an oxygen concentration of 10ppma, a carbon concentration of 0.2ppma, and a thickness of 1150 μm, and the warp BOW measurement of the gan wafer using the silicon substrate having a resistivity of 10 mm cm showed 72 μm, the wafer edge crack measured by the Candela surface showed 230ea, and the longcrack showed 11.6mm, and the data of both the warp BOW and the wafer edge crack and the longcrack were improved on the basis of the comparative example, but the effects of the present disclosure were not as good.
The silicon substrate of comparison 7 was applied to a silicon substrate grown on an 8-inch silicon-based gallium nitride wafer, the silicon substrate had a resistivity of 10 milli-ohm cm, an oxygen concentration of 10ppma, a carbon concentration of 0.5ppma, and a thickness of 1150 μm, and the gallium nitride wafer was grown by a metal organic compound vapor deposition MOCVD system, and the warp BOW measurement showed 56 μm, the wafer edge crack measurement on the Candela surface showed 132ea, and the long crack showed 5.6mm, and the data of the warp BOW, the wafer edge crack, and the long crack were improved on the basis of the comparison example, but the results were not as good as those disclosed herein.
Using a Metal Organic Chemical Vapor Deposition (MOCVD) system as an epitaxial growth system, adjusting the temperature of a cavity in a reaction chamber of the MOCVD system to 1000-1100 ℃, and performing high-temperature cleaning on the silicon substrate 101 in an atmosphere of hydrogen to remove oxides on the surface of the silicon substrate 101;
the parameters of the silicon material need to meet the limit range at the same time, the mechanical strength of the silicon material can be only enabled to be in a state that the warping degree is overlarge in the epitaxial growth process of the gallium nitride caused by lattice mismatch stress and thermal mismatch stress can be greatly relieved, the phenomenon of cracking and scrapping in the epitaxial growth process caused by overlarge mechanical strength can be avoided, and the yield of the finished product of the silicon-based gallium nitride epitaxial growth is effectively improved.
The silicon substrate defined by the disclosure can be suitable for high-temperature epitaxial growth of gallium nitride devices in terms of mechanical strength, the warping degree in the growth process is in a reasonable range, the production and manufacturing yield of the devices is not affected, the production and manufacturing cost of the silicon substrate is not increased from the preparation angle of the silicon substrate, the processes for preparing the silicon substrate belong to mature processes, and the silicon substrate can be prepared only by properly adjusting dopants and condition control. The main parameter indexes of the silicon substrate are limited, the silicon substrate which is suitable for mechanical strength required by epitaxial growth of gallium nitride wafers of various sizes is provided, the warping degree of the gallium nitride wafers is enabled to be in a controllable range, and therefore the production yield of silicon-based gallium nitride devices is improved.
Pre-introducing aluminum on the silicon substrate 101, wherein the flow rate and the time of the aluminum are calculated values, after pre-introducing, a buffer layer grows on the silicon substrate 101, the temperature of a cavity is 900-1050 ℃, the pressure of the cavity of the system is adjusted to be 50-100 mbar, the V/III is 1000-3000, the buffer layer adopts an AlN/AlGaN composite structure, and the thickness of the buffer layer is 300 nm;
epitaxially growing a high-resistance layer 301 with a periodic structure on the buffer layer 201, wherein the structure of each period of the high-resistance layer 301 is made of unintentionally doped Al y Ga (1-y) N, intentionally doped GaN layer, Al x Ga (1-x) N is formed by sequential growth, wherein x is 0.2, y is 0.8, the temperature of the cavity is 980-1100 ℃, the pressure of the cavity of the system is adjusted to 50-100 mbar, V/III is 5000-30000, and C is used 2 H 4 As the carbon dopant, the doping concentration of carbon is represented by C 2 H 4 The flow meter is accurately controlled to be 1E20/cm 3 The logarithm of the whole period is 70 pairs, the thickness of the GaN layer in the period is 40nm, and Al x Ga (1-x) The thickness of the N layer is 10nm, and the thickness of the N layer is AlyGa (1-y) The thickness of the N layer is 2 nm;
growing an unintentional doped gallium nitride layer on the high-impedance layer, wherein the temperature of a cavity is 1000-1100 ℃, the pressure of the cavity of the system is adjusted to be 100-200 mbar, V/III is 30000-50000, and the thickness of the layer is 1000 nm;
and growing a barrier layer on the unintended doped gallium nitride layer, wherein the barrier layer is an AlGaN layer with 21% of Al component, the temperature is 1000-1060 ℃, the pressure of a system cavity is 50-100 mbar, the V/III is 1000-5000, and the thickness of the barrier layer is 15 nm. Since the thickness of the high-impedance layer 301 of the periodic structure is much greater than that of the barrier layer 501, and a thick layer of the unintentionally doped gallium nitride layer 401 is spaced between the barrier layer 501, the barrier layer 501 adopts AlGaN, AlInGaN or AlN/AlGaN, and a composite structure thereof, which do not affect the effect of the periodic structure, that is, the technical scheme of the present disclosure is applicable to different barrier layers 501, and the obtained technical effect is irrelevant to the structure of the barrier layer 501.
And growing a deliberately doped p-type gallium nitride layer on the barrier layer, wherein the temperature is 900-1000 ℃, the pressure of a system cavity is 150-300 mbar, the V/III is 30000-50000, the p-type dopant is magnesium cyclopentadienyl (Cp2Mg), and the thickness of the deliberately doped p-type gallium nitride layer is 100 nm.
The half-peak width value of the gallium nitride is monitored by an XRD ray system, the (002) plane and the (102) plane of the gallium nitride are 354arcsec and 438arcsec respectively, the preparation requirement of a high-performance gallium nitride semiconductor device can be completely met, and the monitoring result of the XRD ray system shows that the dislocation defects in the gallium nitride wafer are fewer than those in a comparison example, namely, the first embodiment effectively reduces the dislocation defects from extending to a barrier layer to extend the whole wafer.
Gallium nitride epitaxial structure in this disclosure the disclosed epitaxial structure is applied to the power conversion device of the on-vehicle module of charging.
Example 2
In this embodiment, a silicon substrate 101 with a crystal orientation of < 111 > is selected as an epitaxial substrate;
using a Metal Organic Chemical Vapor Deposition (MOCVD) system as an epitaxial growth system, adjusting the temperature of a cavity in a reaction chamber of the MOCVD system to 1000-1100 ℃, and performing high-temperature cleaning on the silicon substrate 101 in an atmosphere of hydrogen to remove oxides on the surface of the silicon substrate 101;
pre-feeding aluminum on the silicon substrate 101, wherein the flow rate and time of the aluminum are certain calculated values, after pre-feeding is finished, a buffer layer grows on the silicon substrate 101, the temperature of a cavity is 900-1050 ℃, the pressure of the cavity of the system is adjusted to 50-100 mbar, the V/III is 1000-3000, the buffer layer adopts an AlN/AlGaN composite structure, and the thickness of the buffer layer is 100 nm;
epitaxially growing a high-resistance layer 301 with a periodic structure on the buffer layer 201, wherein the structure of each period of the high-resistance layer 301 is made of unintentionally doped Al y Ga (1-y) N, intentionally doped GaN layer, Al x Ga (1-x) N is formed by sequential growth, wherein x is 0.4, y is 0.6, the cavity temperature is 980-1100 ℃, the system cavity pressure is adjusted to 50-100 mbar, V/III is 5000-30000, and C is used 2 H 4 As the carbon dopant, the doping concentration of carbon is represented by C 2 H 4 The flow meter is accurately controlled to be 1E18/cm 3 The logarithm of the whole period is 125 pairs, the thickness of the GaN layer in the period is 20nm, and Al x Ga (1-x) The thickness of the N layer is 5nm, and AlyGa (1-y) The thickness of the N layer is 5 nm;
growing an unintentional doped gallium nitride layer on the high-impedance layer, wherein the temperature of a cavity is 1000-1100 ℃, the pressure of the cavity of the system is adjusted to be 100-200 mbar, V/III is 30000-50000, and the thickness of the layer is 1000 nm;
and growing a barrier layer on the unintended doped gallium nitride layer, wherein the barrier layer is an AlGaN layer with 24% of Al component, the temperature is 1000-1060 ℃, the pressure of a system cavity is 50-100 mbar, the V/III is 1000-5000, and the thickness of the barrier layer is 14 nm. Since the thickness of the high-impedance layer 301 of the periodic structure is much greater than that of the barrier layer 501, and a thick layer of the unintentionally doped gallium nitride layer 401 is spaced between the barrier layer 501, the barrier layer 501 adopts AlGaN, AlInGaN or AlN/AlGaN, and a composite structure thereof, which do not affect the effect of the periodic structure, that is, the technical scheme of the present disclosure is applicable to different barrier layers 501, and the obtained technical effect is irrelevant to the structure of the barrier layer 501.
And growing a deliberately doped p-type gallium nitride layer on the barrier layer, wherein the temperature is 900-1000 ℃, the pressure of a system cavity is 150-300 mbar, the V/III is 30000-50000, the p-type dopant is magnesium cyclopentadienyl (Cp2Mg), and the thickness of the deliberately doped p-type gallium nitride layer is 85 nm.
The half-peak width value of the gallium nitride is monitored by an XRD ray system, the (002) plane and the (102) plane of the gallium nitride are 334arcsec and 422arcsec respectively, the preparation requirement of a high-performance gallium nitride semiconductor device can be completely met, and the monitoring result of the XRD ray system shows that the dislocation defects in the gallium nitride wafer are fewer than those in a comparison example, namely, the dislocation defects are effectively reduced to extend to a barrier layer and extend to the whole wafer in the second embodiment.
Gallium nitride epitaxial structure in this disclosure this disclosed epitaxial structure is applied to smart mobile phone quick charge power conversion device.
Example 3
In the embodiment, a silicon substrate 101 with a crystal orientation of < 111 > is selected as an epitaxial substrate;
using a Metal Organic Chemical Vapor Deposition (MOCVD) system as an epitaxial growth system, adjusting the temperature of a cavity in a reaction chamber of the MOCVD system to 1000-1100 ℃, and performing high-temperature cleaning on the silicon substrate 101 in an atmosphere of hydrogen to remove oxides on the surface of the silicon substrate 101;
pre-feeding aluminum on the silicon substrate 101, wherein the flow rate and time of the aluminum are certain calculated values, after pre-feeding is finished, a buffer layer grows on the silicon substrate 101, the temperature of a cavity is 900-1050 ℃, the pressure of the cavity of the system is adjusted to 50-100 mbar, the V/III is 1000-3000, the buffer layer adopts an AlN/AlGaN composite structure, and the thickness of the buffer layer is 100 nm;
epitaxially growing a high-resistance layer 301 with a periodic structure on the buffer layer 201, wherein the structure of each period of the high-resistance layer 301 is made of unintentionally doped Al y Ga (1-y) N, intentionally doped GaN layer, Al x Ga (1-x) N is formed by sequential growth, wherein x is 0.3, y is 0.7, the cavity temperature is 980-1100 ℃, the system cavity pressure is adjusted to 50-100 mbar, V/III is 5000-30000, and C is used 2 H 4 As the carbon dopant, the doping concentration of carbon is represented by C 2 H 4 Accurate control of flow meterIs 1E19/cm 3 The logarithm of the whole period is 125 pairs, the thickness of the GaN layer in the period is 20nm, and Al x Ga (1-x) The thickness of the N layer is 8nm, and AlyGa (1-y) The thickness of the N layer is 2 nm;
growing an unintentional doped gallium nitride layer on the high-impedance layer, wherein the temperature of a cavity is 1000-1100 ℃, the pressure of the cavity of the system is adjusted to be 100-200 mbar, V/III is 30000-50000, and the thickness of the layer is 1000 nm;
and growing a barrier layer on the unintended doped gallium nitride layer, wherein the barrier layer is an AlGaN layer with the Al component of 23%, the temperature is 1000-1060 ℃, the pressure of a system cavity is 50-100 mbar, the V/III is 1000-5000, and the thickness of the barrier layer is 14 nm.
The disclosed epitaxial structure is applied to a 5G macro base station radio frequency module device in the field of gallium nitride radio frequency.
Since the thickness of the high-impedance layer 301 of the periodic structure is much greater than that of the barrier layer 501, and a thick layer of the unintentionally doped gallium nitride layer 401 is spaced between the barrier layer 501, the barrier layer 501 adopts AlGaN, AlInGaN or AlN/AlGaN, and a composite structure thereof, which do not affect the effect of the periodic structure, that is, the technical scheme of the present disclosure is applicable to different barrier layers 501, and the obtained technical effect is irrelevant to the structure of the barrier layer 501.
The half-peak width value of the gallium nitride is monitored by an XRD ray system, the (002) plane and the (102) plane of the gallium nitride are respectively 340arcsec and 418arcsec, the preparation requirement of a high-performance gallium nitride semiconductor device can be completely met, and the monitoring result of the XRD ray system shows that the dislocation defect in the gallium nitride wafer is less than that of a comparative example, namely, the dislocation defect is effectively reduced to extend to a barrier layer and extend to the whole wafer.
The gallium nitride epitaxial structure in the present disclosure can be applied to different semiconductor devices, such as power devices, radio frequency devices, and field effect transistors.
Comparative example 1
In the comparative example, a silicon substrate with a crystal orientation of < 111 > was used as an epitaxial substrate;
using a Metal Organic Chemical Vapor Deposition (MOCVD) system as an epitaxial growth system, adjusting the temperature of a cavity in a reaction chamber of the MOCVD system to 1000-1100 ℃, and performing high-temperature cleaning on the silicon substrate 101 in an atmosphere of hydrogen to remove oxides on the surface of the silicon substrate 101;
introducing Al on the silicon substrate in advance, wherein the flow and the time of the Al are certain calculated values, growing a buffer layer after the introducing is finished, the temperature of a cavity is 900-1050 ℃, the pressure of the cavity of the system is adjusted to be 50-100 mbar, the V/III is 1000-3000, the buffer layer adopts an AlN/AlGaN composite structure, and the thickness is 300 nm;
growing a conventional GaN layer high-impedance layer intentionally doped with carbon on the buffer layer, wherein the cavity temperature is 1050-1100 ℃, the system cavity pressure is adjusted to 100-200 mbar, V/III is 30000-40000, and C is used 2 H 4 As the carbon dopant, the doping concentration of carbon is represented by C 2 H 4 The flowmeter is accurately controlled, and the thickness of the high-impedance layer is 3000 nm;
growing an unintentional doped gallium nitride layer on the high-impedance layer, wherein the temperature of a cavity is 1000-1100 ℃, the pressure of the cavity of the system is adjusted to be 100-200 mbar, V/III is 30000-50000, and the thickness of the layer is 1000 nm;
growing a barrier layer on the unintended doped gallium nitride layer, wherein the barrier layer is an AlGaN layer with 23% of Al component, the temperature is 1000-1060 ℃, the pressure of a system cavity is 50-100 mbar, the V/III is 1000-5000, and the thickness of the barrier layer is 15 nm;
growing a p-type intentionally doped gallium nitride layer on the barrier layer, wherein the temperature is 900-1000 ℃, the pressure of a system cavity is 150-300 mbar, the V/III is 30000-50000, the p-type dopant is magnesium cyclopentadienyl (Cp2Mg), and the thickness of the p-type intentionally doped gallium nitride layer is 100 nm;
in the comparison example, the half-peak width value of the gallium nitride is monitored by an XRD ray system, the half-peak widths of (002) and (102) surfaces of the gallium nitride are respectively 599arcsec and 870arcsec, and data show that the dislocation defects of a gallium nitride wafer are more, so that the defect-caused leakage channels are more when the gallium nitride wafer is used for preparing a gallium nitride device, and the performance of the device is influenced.
Comparative example 2
In the comparative example, a silicon substrate with a crystal orientation of < 111 > was used as an epitaxial substrate;
using a Metal Organic Chemical Vapor Deposition (MOCVD) system as an epitaxial growth system, adjusting the temperature of a cavity in a reaction chamber of the MOCVD system to 1000-1100 ℃, and performing high-temperature cleaning on the silicon substrate 101 in an atmosphere of hydrogen to remove oxides on the surface of the silicon substrate 101;
introducing Al on the silicon substrate in advance, wherein the flow and the time of the Al are certain calculated values, growing a buffer layer after the introducing is finished, the temperature of a cavity is 900-1050 ℃, the pressure of the cavity of the system is adjusted to be 50-100 mbar, the V/III is 1000-3000, the buffer layer adopts an AlN/AlGaN composite structure, and the thickness is 300 nm;
growing a conventional GaN layer high-impedance layer intentionally doped with carbon on the buffer layer, wherein the cavity temperature is 1050-1100 ℃, the system cavity pressure is adjusted to 100-200 mbar, V/III is 30000-40000, and C is used 2 H 4 As the carbon dopant, the doping concentration of carbon is represented by C 2 H 4 The flowmeter is accurately controlled, and the thickness of the high-impedance layer is 3000 nm;
growing an unintentional doped gallium nitride layer on the high-impedance layer, wherein the temperature of a cavity is 1000-1100 ℃, the pressure of the cavity of the system is adjusted to be 100-200 mbar, V/III is 30000-50000, and the thickness of the layer is 1000 nm;
growing a barrier layer on the unintended doped gallium nitride layer, wherein the barrier layer is an AlGaN layer with the Al component of 23%, the temperature is 1000-1060 ℃, the pressure of a system cavity is 50-100 mbar, the V/III is 1000-5000, and the thickness of the barrier layer is 15 nm;
growing a p-type intentionally doped gallium nitride layer on the barrier layer, wherein the temperature is 900-1000 ℃, the pressure of a system cavity is 150-300 mbar, the V/III is 30000-50000, the p-type dopant is magnesium cyclopentadienyl (Cp2Mg), and the thickness of the p-type intentionally doped gallium nitride layer is 100 nm;
in the comparison example, the half-peak width value of the gallium nitride is monitored by an XRD ray system, the half-peak widths of (002) and (102) surfaces of the gallium nitride are respectively 409arcsec and 570arcsec, and data shows that the dislocation defects of a gallium nitride wafer are more, so that the defect-caused leakage channel is more when the gallium nitride wafer is used for preparing a gallium nitride device, and the performance of the device is influenced.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (10)
1. An epitaxial structure of a gallium nitride device, comprising a silicon substrate (101), characterized in that a buffer layer (201) is epitaxially grown on the silicon substrate (101), a high-impedance layer (301) with a periodic structure is epitaxially grown on the buffer layer (201), and the structure of each period of the high-impedance layer (301) is formed by unintentionally doped Al which is unintentionally doped y Ga (1-y) N, intentionally doped GaN layer, Al x Ga (1-x) N is formed by sequential growth, wherein x is 0.2-0.4, and y is 0.6-0.8; an unintentionally doped gallium nitride layer (401) is epitaxially grown on the high-resistance layer (301); a barrier layer (501) is epitaxially grown over the unintentionally doped gallium nitride layer (401).
2. The epitaxial structure of gallium nitride devices according to claim 1, characterized in that the silicon substrate (101) has a resistivity of 0.5 to 10 milli-ohm cm.
3. The epitaxial structure of a gallium nitride device according to claim 1, characterized in that the silicon substrate (101) has an oxygen concentration of 10 to 20 ppma.
4. The epitaxial structure of gallium nitride device according to claim 1, characterized in that the buffer layer (201) can be AlN, AlInN or their composite structure, or AlN/AlGaN composite structure, and the thickness of the buffer layer is 100-300 nm.
5. Epitaxial structure of gallium nitride device according to claim 1, characterized in that the dopant used for the intentionally doped GaN is carbon with a doping concentration of 1E18/cm 3 To 1E20/cm 3 The periodic structure form is Al x Ga (1-x) N/c-GaN/Al y Ga (1-y) N。
6. Epitaxial structure of gallium nitride device according to claim 1, characterized in that the barrier layer (501) is one of AlGaN, AlInGaN, AlN/AlGaN or a combination thereof.
7. Epitaxial structure of gallium nitride device according to claim 1, characterized in that an intentionally doped p-type gallium nitride layer (601) is epitaxially grown on top of the barrier layer (501).
8. Epitaxial structure of a gallium nitride device according to claim 1, characterized in that the thickness of the intentionally doped p-type gallium nitride layer (601) is 50-150 nm.
9. A method for preparing an epitaxial structure of a gallium nitride device, wherein the epitaxial structure of the gallium nitride device is as claimed in any one of claims 1 to 8, the method comprising: selecting a silicon substrate (101) as an epitaxial substrate, using a metal organic compound deposition system as an epitaxial growth system, adjusting the temperature of a reaction chamber of the metal organic compound deposition system to 1000-1100 ℃, and using hydrogen as an atmosphere gas to carry out high-temperature cleaning on the silicon substrate (101); then pre-passing aluminum on the silicon substrate (101), wherein the flow rate and the time of the aluminum are certain calculated values, and after the pre-passing is finished, a buffer layer (201) grows above the silicon substrate (101); adjusting the temperature of a reaction chamber of a metal organic compound deposition system to 900-1050 ℃, the pressure in the reaction chamber to 50-100 mbar, V/III to 5000-30000, and using C 2 H 4 As carbon dopants, doping of carbonImpurity concentration is represented by C 2 H 4 Accurately controlling the flowmeter, and growing a high-impedance layer (301) with a periodic structure on the buffer layer (201); then growing an unintentionally doped gallium nitride layer (401) on the high-impedance layer (301); a barrier layer (501) is then grown over the unintentionally doped gallium nitride layer (401).
10. The method for preparing the epitaxial structure of the gallium nitride device according to claim 9, wherein the intentionally doped p-type gallium nitride layer (601) is grown on the barrier layer (501) under the conditions of adjusting the temperature of the reaction chamber of the metal organic compound deposition system to 900-1000 ℃, the pressure to 150-300 mbar, the V/III to 30000-50000 and the p-type dopant to be magnesium diclomethate.
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