CN114838761A - Novel temperature and humidity MEMS sensor and preparation method thereof - Google Patents
Novel temperature and humidity MEMS sensor and preparation method thereof Download PDFInfo
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- CN114838761A CN114838761A CN202210374204.6A CN202210374204A CN114838761A CN 114838761 A CN114838761 A CN 114838761A CN 202210374204 A CN202210374204 A CN 202210374204A CN 114838761 A CN114838761 A CN 114838761A
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- 239000010410 layer Substances 0.000 claims abstract description 101
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000010409 thin film Substances 0.000 claims abstract description 26
- 239000010408 film Substances 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000011241 protective layer Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 11
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
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- 238000001259 photo etching Methods 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 238000004804 winding Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 6
- 238000007791 dehumidification Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- 230000004044 response Effects 0.000 abstract description 2
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- 230000009286 beneficial effect Effects 0.000 description 1
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- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
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- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
- G01D5/241—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes
- G01D5/2412—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes by varying overlap
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- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/186—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer using microstructures
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- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
- G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
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Abstract
The invention belongs to the technical field of sensors, relates to a temperature and humidity sensor, and particularly provides a novel temperature and humidity MEMS sensor and a preparation method thereof; the device comprises: SOI substrate and ALN protective layer, metal Mo thin film layer and SiO thereon 2 The temperature compensation layer and the conductive metal layer, the metal Mo film layer comprises a heating resistor and a temperature measuring resistor; during humidity sensing, the heating resistor is usedThe dehumidification can be accelerated in the dehumidification process for the built-in heating layer, the wet stagnation of the device is reduced, and the sensitivity of the device is increased; during temperature sensing, the built-in temperature measuring resistor shortens a heat transfer path, and the response time is shorter and more sensitive; in addition, the metal Mo is compatible with the CMOS process and can be well compatible with the manufacturing process of other sensors, the preparation process is simple, and the preparation cost is low; in conclusion, the invention has better stability and compatibility, enhances the testing precision and sensitivity, reduces the size of the device, improves the integration level and has wider application environment range.
Description
Technical Field
The invention belongs to the technical field of sensors, relates to a temperature and humidity sensor, and particularly provides a novel temperature and humidity MEMS sensor and a preparation method thereof.
Background
The humidity sensor is used as a sensor for monitoring humidity change in real time, and is widely applied to the fields of environmental monitoring, chemical medicine, electronic industry, biology and the like; with the rapid development of integrated circuit technology and micro-electromechanical technology, the humidity sensor is increasingly miniaturized, integrated and multifunctional, and also occupies a great position in the advanced fields of modern military, microelectronic devices, micro-electromechanical systems, aerospace and other technologies.
The capacitance type humidity sensor, which is the most widely applied humidity sensor at present, has the advantages of simple structure, mature process, high sensitivity and the like, and the typical structure of the capacitance type humidity sensor comprises a parallel plate structure and an interdigital structure; the interdigital structure is the most common, and the basic principle is that when a polymer film is used for etching an electrode, the polymer film usually has the characteristic of low dielectric constant, the dielectric constant of water molecules is about 80, and when the water molecules in the surrounding environment enter a humidity sensitive material, the dielectric constant of the humidity sensitive material is greatly increased, so that the detection capacitance value of the capacitive humidity sensor is increased; the capacitance signals are detected through the peripheral circuit, and the characterization numerical value of the environment humidity can be obtained by means of the one-to-one correspondence relationship between the humidity and the electric signals.
The basic principle of the MEMS temperature sensor is as follows: the change of the environmental temperature causes the materials with different thermal expansion coefficients to generate deformation with different degrees, and the modification can change the resistivity inside the materials or change the capacitance value of the micro-plate capacitor, thereby generating the change of electrical signals.
However, the above sensors still have some drawbacks: the sensor is too large in size, so that the overall size control of the intelligent product in partial scenes is not facilitated; secondly, in actual life, the temperature and the humidity are often closely combined and mutually influenced, and a convenient and practical design with a composite temperature and humidity measurement function is needed; finally, part of the devices with the temperature and humidity measurement function are complex in design and cannot be effectively compatible with the CMOS process, so that the performance precision of the devices is reduced. .
Disclosure of Invention
The invention aims to provide a novel temperature and humidity MEMS sensor and a preparation method thereof, aiming at solving the problems of a moderate temperature and humidity sensor in the prior art; the temperature and humidity MEMS sensor provided by the invention has better stability and compatibility, the test precision and sensitivity of the sensor are enhanced, the size of a device is effectively reduced, the integration level is obviously improved, the mass production of the device is facilitated in production, and the applicable range environment is wider.
In order to realize the purpose, the technical scheme adopted by the invention is as follows:
a novel humiture MEMS sensor, comprising: an SOI substrate, an ALN protective layer arranged on the SOI substrate, a metal Mo thin film layer arranged on the ALN protective layer, and a SiO thin film layer arranged on the metal Mo thin film layer 2 Temperature compensation layer and arranged on SiO 2 A conductive metal layer on the temperature compensation layer; wherein the metal Mo thin film layer comprises: the temperature measuring device comprises a heating resistor and a temperature measuring resistor, wherein the heating resistor is formed by connecting four S-shaped resistance wires which are centrosymmetric in series, the temperature measuring resistor is formed by connecting two zigzag thin film resistors which are centrosymmetric in series, and the temperature measuring resistor is positioned on the periphery of the heating resistor; the conductive metal layer includes: four interdigital capacitors which are centrosymmetric and connected in parallel are connected with a snake-shaped molybdenum film resistance wire IAnd one is arranged oppositely.
Furthermore, the thickness of metal Mo thin film layer is 0.1 ~ 0.3um, snakelike structure resistance wire is formed by many resistance wire end to end Z type windings, the width of "it" font thin film resistor is 12 ~ 18um, length is 180 ~ 220 um.
Further, the AlN protective layer is 0.8-1.2 um thick.
Further, the SiO 2 The thickness of the temperature compensation layer is 0.5-2 um, and SiO 2 And a metalized through hole is arranged at a preset position in the temperature compensation layer and used for realizing vertical interconnection and leading out the connecting end of the metal Mo thin film layer to the conductive metal layer (metal pad).
Furthermore, the conductive metal material of the conductive metal layer is Cu, Al or Ti, and the thickness of the conductive metal material is 0.4-0.6 um.
Further, the SOI substrate comprises from down up device silicon layer, buried oxide layer and the body silicon layer that stacks gradually the setting up, the thickness of device silicon layer 30 ~ 70um, the thickness on buried oxide layer is 0.8 ~ 1.2um, the thickness on body silicon layer is 10 ~ 30 um.
The preparation method of the novel temperature and humidity MEMS sensor is characterized by comprising the following steps:
step 3, growing a layer of metal Mo film on the protective layer by adopting PECVD, patterning the metal Mo film by photoetching, and constructing a heating resistor, a temperature measuring resistor and a connecting wire;
step 4, depositing a layer of SiO on the metal Mo thin film layer by adopting a chemical vapor deposition (PECVD) method 2 Thin film, as temperature compensation layer, and for SiO by DRIE technique 2 Etching the layer to form a through hole;
and 5, depositing a conductive metal layer on the temperature compensation layer by adopting a PVD (physical vapor deposition) deposition method, and patterning the conductive metal layer by photoetching to form the interdigital capacitor, the metal bonding pad and the connecting line.
The invention has the beneficial effects that:
the invention provides a novel temperature and humidity MEMS sensor, which is provided with a graphical metal Mo film layer, and a heating resistor and a temperature measuring resistor are respectively formed; when humidity sensing is carried out, a layer of humidity sensing film is spun and grown on the interdigital capacitor structure, the interdigital capacitor changes along with air humidity, and a humidity value is measured according to the relation between the capacitance and the humidity; the heating resistor serving as a built-in heating layer can uniformly heat the interdigital capacitor of the sensor, so that dehumidification is accelerated in the dehumidification process, the wet stagnation of the device is reduced, and the sensitivity of the device is increased;
when temperature sensing is performed and the ambient temperature increases, the resistivity of the temperature measuring resistor increases linearly, and the temperature value is measured by the film resistance value, as shown in fig. 5; the novel structure is matched to form the built-in temperature sensor, compared with an external temperature sensor, a heat transfer path is shortened, the response time is shorter, and the sensitivity is higher;
In addition, the metal Mo compatible with the CMOS process is adopted as the material of the heating layer and the temperature measuring layer, so that the sensor is better compatible with the manufacturing process of other sensors, the preparation process is simple, and the preparation cost is low;
in conclusion, the temperature and humidity MEMS sensor provided by the invention has better stability and compatibility, the test precision and sensitivity of the sensor are enhanced, the size of a device is effectively reduced, the integration level is obviously improved, the mass production of the device is facilitated in production, and the applicable environment range is wider.
Drawings
FIG. 1 is a schematic cross-sectional structure diagram of the novel temperature and humidity MEMS sensor, wherein 1 is an SOI substrate, 2 is an AlN protective layer, 3 is a metal Mo thin film layer, and 4 is SiO 2 And the temperature compensation layer 5 is a conductive metal layer.
Fig. 2 is a schematic diagram of a three-dimensional structure of the novel temperature and humidity MEMS sensor according to the present invention.
Fig. 3 is a schematic structural diagram of a metal Mo thin film layer in the novel temperature and humidity MEMS sensor according to the present invention.
Fig. 4 is a schematic structural diagram of a temperature measuring resistor in the novel temperature and humidity MEMS sensor.
Fig. 5 is a schematic diagram of the principle of the temperature measuring resistor in the novel temperature and humidity MEMS sensor according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described with reference to the following embodiments and the accompanying drawings.
The embodiment provides a novel humiture MEMS sensor, and its structure is shown in fig. 1, fig. 2, specifically includes: an SOI substrate 1, an ALN protective layer 2 disposed on the SOI substrate, a metal Mo thin film layer 3 disposed on the ALN protective layer, and SiO disposed on the metal Mo thin film layer 2 A temperature compensation layer 4 and arranged on SiO 2 A conductive metal layer 5 on the temperature compensation layer; wherein the metal Mo thin film layer comprises: the temperature measuring device comprises a heating resistor and a temperature measuring resistor, wherein the heating resistor is formed by connecting four S-shaped resistance wires which are centrosymmetric in series, the temperature measuring resistor is formed by connecting two zigzag thin film resistors which are centrosymmetric in series, and the temperature measuring resistor is positioned on the periphery of the heating resistor, as shown in figure 3; the conductive metal layer includes: four interdigital capacitors which are centrosymmetric are connected in parallel, and the interdigital capacitors and the serpentine-structure molybdenum film resistance wires are arranged in a one-to-one opposite mode.
In this embodiment, the SOI substrate is composed of a device silicon layer, an oxygen buried layer and a bulk silicon layer which are sequentially stacked from bottom to top, the thickness of the device silicon layer is 50um, the thickness of the oxygen buried layer is 1um, and the thickness of the bulk silicon layer is 20 um; the thickness of the metal Mo film layer is 0.2um, the S-shaped resistance wire is formed by winding a plurality of resistance wires in a Z-shaped mode from head to tail, the width of the zigzag film resistor is 18um, and the length of the zigzag film resistor is 204um, as shown in figure 4; the AlN protective layer is 1um thick; the SiO 2 The thickness of the temperature compensation layer is 0.5um and SiO 2 A metalized through hole is arranged at a preset position in the temperature compensation layer and used for leading out the connecting end of the metal Mo film layer to SiO 2 At a metal pad (pad) of a conductive metal layer above the layer; the conductive metal material of the conductive metal layer is Al, and the thickness of the conductive metal material is 0.5 um.
The novel temperature and humidity MEMS sensor is prepared by the following steps:
step 3, growing a layer of metal Mo film on the protective layer by adopting PECVD, patterning the metal Mo film by photoetching, and constructing a heating resistor, a temperature measuring resistor and a connecting wire;
step 4, depositing a layer of SiO on the metal Mo thin film layer by adopting a chemical vapor deposition (PECVD) method 2 A thin film as a temperature compensation layer and formed on SiO by photolithography 2 Forming a through hole;
and 5, depositing a conductive metal layer on the temperature compensation layer by adopting a PVD (physical vapor deposition) deposition method, and patterning the conductive metal layer by photoetching to form the interdigital capacitor, the metal bonding pad and the connecting line.
While the invention has been described with reference to specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps.
Claims (8)
1. A novel humiture MEMS sensor, comprising: an SOI substrate, an ALN protective layer arranged on the SOI substrate, a metal Mo thin film layer arranged on the ALN protective layer, and a SiO thin film layer arranged on the metal Mo thin film layer 2 Temperature compensation layer and SiO layer 2 A conductive metal layer on the temperature compensation layer; wherein the metal Mo thin film layer comprises: the temperature measuring device comprises a heating resistor and a temperature measuring resistor, wherein the heating resistor is formed by connecting four S-shaped resistance wires which are centrosymmetric in series, the temperature measuring resistor is formed by connecting two zigzag thin film resistors which are centrosymmetric in series, and the temperature measuring resistor is positioned on the periphery of the heating resistor; the conductive metal layer includes: four interdigital capacitors which are centrosymmetric are connected in parallel and are opposite to the molybdenum film resistance wire with the snake-shaped structure one by one。
2. The temperature and humidity MEMS sensor according to claim 1, wherein the thickness of the metal Mo film layer is 0.1-0.3 um, the S-shaped resistance wire is formed by winding a plurality of resistance wires in a Z-shaped manner end to end, and the width and the length of the S-shaped film resistor are 12-18 um and 180-220 um respectively.
3. The temperature-humidity MEMS sensor according to claim 1, wherein the AlN protective layer has a thickness of 0.8-1.2 μm.
4. The humiture MEMS sensor of claim 1, wherein the SiO is 2 The thickness of the temperature compensation layer is 0.5-2 um, and SiO 2 And a metalized through hole is arranged at a preset position in the temperature compensation layer and used for realizing vertical interconnection to lead out the connecting end of the metal Mo thin film layer to the conductive metal layer.
5. The temperature and humidity MEMS sensor according to claim 1, wherein the conductive metal material of the conductive metal layer is Cu, Al or Ti, and the thickness is 0.4-0.6 um.
6. The temperature and humidity MEMS sensor according to claim 1, wherein the SOI substrate comprises a device silicon layer, an oxygen buried layer and a bulk silicon layer which are sequentially stacked from bottom to top, the thickness of the device silicon layer is 30-70 um, the thickness of the oxygen buried layer is 0.8-1.2 um, and the thickness of the bulk silicon layer is 10-30 um.
7. The temperature-humidity MEMS sensor according to claim 1, wherein a back cavity is opened at a back of the SOI substrate, and a depth of the back cavity is not more than 20 μm.
8. The method for manufacturing the temperature and humidity MEMS sensor according to claim 1, comprising the steps of:
step 1, adopting an SOI wafer as a substrate;
step 2, growing a layer of ALN film on the substrate by adopting magnetron sputtering as a protective layer;
Step 3, growing a layer of metal Mo film on the protective layer by adopting PECVD, patterning the metal Mo film by photoetching, and constructing a heating resistor, a temperature measuring resistor and a connecting wire;
step 4, depositing a layer of SiO on the metal Mo thin film layer by adopting a chemical vapor deposition (PECVD) method 2 The film is used as a temperature compensation layer and is used for SiO by DRIE technology 2 Etching the layer to form a through hole;
and 5, depositing a conductive metal layer on the temperature compensation layer by adopting a PVD (physical vapor deposition) deposition method, and patterning the conductive metal layer by photoetching to form the interdigital capacitor, the metal bonding pad and the connecting line.
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| US20050109081A1 (en) * | 2003-11-21 | 2005-05-26 | Anis Zribi | Miniaturized multi-gas and vapor sensor devices and associated methods of fabrication |
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| CN110132451A (en) * | 2019-05-10 | 2019-08-16 | 中国电子科技集团公司第四十八研究所 | A kind of heat flow transducer and preparation method thereof |
| CN112378963A (en) * | 2020-11-04 | 2021-02-19 | 北京航天微电科技有限公司 | Humidity sensor with heating and temperature measuring functions and manufacturing method thereof |
| CN114152360A (en) * | 2021-10-27 | 2022-03-08 | 贵州航天智慧农业有限公司 | MEMS temperature, humidity and pressure three-in-one sensor chip and manufacturing process thereof |
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- 2022-04-11 CN CN202210374204.6A patent/CN114838761A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050109081A1 (en) * | 2003-11-21 | 2005-05-26 | Anis Zribi | Miniaturized multi-gas and vapor sensor devices and associated methods of fabrication |
| CN1845327A (en) * | 2005-04-07 | 2006-10-11 | 中国科学院电子学研究所 | Single slice integration temperature, humidity, pressure sensor chip based on polymer material |
| CN110132451A (en) * | 2019-05-10 | 2019-08-16 | 中国电子科技集团公司第四十八研究所 | A kind of heat flow transducer and preparation method thereof |
| CN112378963A (en) * | 2020-11-04 | 2021-02-19 | 北京航天微电科技有限公司 | Humidity sensor with heating and temperature measuring functions and manufacturing method thereof |
| CN114152360A (en) * | 2021-10-27 | 2022-03-08 | 贵州航天智慧农业有限公司 | MEMS temperature, humidity and pressure three-in-one sensor chip and manufacturing process thereof |
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