CN114823364A - Airtight packaging method - Google Patents
Airtight packaging method Download PDFInfo
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- CN114823364A CN114823364A CN202210412059.6A CN202210412059A CN114823364A CN 114823364 A CN114823364 A CN 114823364A CN 202210412059 A CN202210412059 A CN 202210412059A CN 114823364 A CN114823364 A CN 114823364A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/29124—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29155—Nickel [Ni] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29166—Titanium [Ti] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention provides an airtight packaging method applying a self-propagating brazing film, which comprises the following steps: establishing a packaging cavity; the encapsulation cavity includes: a ceramic base plate; the side wall is arranged on the ceramic bottom plate, and a self-propagating brazing film is arranged between the side wall and the bottom plate; the cover plate is arranged on the side wall, and a self-propagating brazing film is arranged between the cover plate and the side wall; placing a chip in the package cavity; placing the packaging cavity in a vacuum chamber; the vacuum chamber includes an optical window; and igniting the self-propagating brazing film in a non-contact ignition mode, and realizing the sealing connection of the bottom plate and the side wall as well as the sealing connection of the cover plate and the side wall of the packaging cavity through self-propagating reaction. The invention solves the problem of packaging the chip by the air-tight device with special atmosphere (including vacuum) by applying the self-propagating brazing film. The method has the remarkable advantages of high air tightness and low-temperature rapid processing of the packaged device.
Description
Technical Field
The invention belongs to the technical field of semiconductor packaging, and particularly relates to an airtight packaging method applying a self-propagating brazing film.
Background
Since power electronics plays a key role in many low-carbon technical fields, such as electric vehicles, power generation distribution of renewable energy sources, smart grid and the like, power electronics technology is determined as a development field with strategic priority by all countries in the world. The use of third generation Wide Band Gap (WBG) semiconductor silicon carbide and gallium nitride, etc. lays the foundation for developing new generation power electronic devices with higher efficiency, higher use temperature, higher power density and lower cost. However, the service temperature of the conventional tin-based solder cannot exceed 200 ℃, and cannot meet the high working temperature of the WBG device caused by high voltage and high current conversion rate. The third generation of semiconductor device applications requires low cost, high melting point lead-free solders as competitive solutions for high temperature and power electronic interconnections, reducing device damage from process time and temperature during soldering.
The packaging of power electronic devices aims to isolate the chip from the external environment such as temperature, humidity, air and the like, and has the functions of protection and electrical insulation; meanwhile, the heat can be dissipated outwards and the stress can be released. The hermeticity of a package is generally measured by its ability to block and diffuse, with air leakage rates below 1X 10-8cm 3 And/s, the material is considered airtight. The quality of the airtightness is a key factor determining the performance of the power electronic device.
In the existing airtight bonding technology adopted for packaging common power electronic devices, the requirements of metal (including various metal alloys) intermediate layer bonding on intermediate layer material components and process parameter control are high, and the high temperature generated by welding the metal intermediate layer bonding can possibly damage a chip in a sealing body.
Disclosure of Invention
The invention solves the technical problems in the background art and provides an airtight packaging method applying a self-propagating brazing film.
The invention discloses an airtight packaging method applying a self-propagating brazing film, which comprises the following steps:
establishing a packaging cavity; the package cavity includes:
a base plate;
the side wall is arranged on the ceramic bottom plate, and a self-propagating brazing film is arranged between the side wall and the bottom plate;
the cover plate is arranged on the side wall, and a self-propagating brazing film is arranged between the cover plate and the side wall;
placing a chip in the package cavity;
placing the packaging cavity in a vacuum chamber; the vacuum chamber comprises an optical window;
the self-propagating brazing film is used as the sealing connection welding flux of the packaging cavity, and the self-propagating brazing film can be ignited in a non-contact mode to generate a self-propagating reaction, so that the sealing connection of the packaging cavity is realized, and the sealing performance of the sealing cavity is improved. The self-propagating brazing film has a lower melting point in the area close to the sealing body, so that the heat transferred to the sealing cavity in the welding process is reduced, the temperature in the sealing cavity is reduced, the damage to a chip in the packaging cavity is avoided, and the safety of the chip in a brazing process window is guaranteed.
Further, the chip is a high-temperature pressure sensor, an ultraviolet LED chip or a laser LED chip.
Further, the non-contact ignition mode comprises laser incidence ignition or inductive heating ignition.
Further, the ceramic base plate comprises a metalized layer arranged on the ceramic base plate, and the metalized layer is arranged between the self-propagating brazing film and the base plate.
Further, the self-propagating brazing film comprises a first brazing material layer, a self-propagating multilayer film and a second brazing material layer which are sequentially stacked, wherein the self-propagating multilayer film comprises one or more of Ti-Al, Al-Ni, Ti-Ni, Ni-Si, Nb-Si, Al-CuOx and Al-Pt films, and the melting point of the first brazing material layer and/or the second brazing material layer is lower than the instantaneous reaction highest temperature of the self-propagating multilayer film. The self-propagating brazing film structure can be designed to reduce the melting point of the contact part of the self-propagating brazing film structure and the bottom plate/side wall/cover plate, so that the damage to a chip is avoided, and the safety of the chip in a brazing process window is guaranteed.
Further, the melting points of the first brazing filler metal layer and/or the second brazing filler metal layer are distributed in a gradient mode in the thickness direction far away from the self-propagating multilayer film. The melting points of the first solder layer and/or the second solder layer are designed to be distributed in a gradient manner. The design ensures that the central high temperature generated by the self-propagating brazing film and a steep temperature area facing to an adjacent area are reserved with a tiny heat affected area, thereby greatly improving the heat adaptation of the brazing filler metal to the self-propagating multilayer film, the side wall, the ceramic bottom plate and the cover plate and improving the heat reliability of the whole welding spot.
Further, the material of the first brazing filler metal layer and/or the second brazing filler metal layer comprises bismuth-based, zinc-based or aluminum-based alloy.
Further, the material of the first brazing filler metal layer and/or the second brazing filler metal layer comprises one or two of binary or ternary zinc-based alloy and binary or ternary bismuth-based alloy.
Further, the melting point range of the contact area of the first brazing filler metal layer and/or the second brazing filler metal layer and the self-propagating multilayer film is 1100-400 ℃; the melting point range of the welding interface area of the first brazing filler metal layer and/or the second brazing filler metal layer is 250-380 ℃.
Further, the melting point range of the contact area of the first solder layer and/or the second solder layer and the self-propagating multilayer film is 1064-420 ℃, and the melting point range of the welding interface area of the first solder layer and/or the second solder layer is 196-381 ℃.
Compared with the prior art, the invention has the beneficial effects that:
the invention realizes the sealing, packaging and bonding of the cover plate, the side wall and the ceramic bottom plate in the airtight device containing special atmosphere (including vacuum) by self-propagating micro-soldering, and completes the airtight packaging of the chip.
The invention adopts the laser beam incident from the vacuum chamber window to carry out non-contact ignition on the external reserved part of the preformed self-propagating brazing film square ring, solves the problem that the high resistance welding temperature in the resistance welding packaging high-temperature electronic device in the prior art has damage to a high-power chip, effectively improves the air tightness of the packaging device and greatly prolongs the service life of the high-power electronic device.
The invention simultaneously considers the process efficiency and has the obvious advantage of low-temperature rapid processing.
Drawings
FIG. 1 is a schematic view of a hermetic package chamber and a vacuum chamber using a self-propagating solder film according to the present invention;
FIG. 2 is a schematic structural view of a self-propagating brazing film according to the present invention;
FIG. 3 is a schematic view of a welding temperature distribution corresponding to a self-propagating brazing film according to the present invention;
FIG. 4 is a flow chart of a hermetic sealing method using a self-propagating solder film according to the present invention.
Description of the figures
1. Optical window 2, vacuum chamber 3, cover plate 4 and side wall
5. Metallization layer 6, self-propagating brazing film 7, ceramic bottom plate 8 and chip
9. Bonding workbench 10, self-propagating multilayer film 11, second solder layer 12 and first solder layer
Detailed Description
The invention and the manner of attaining it may be better understood by reference to the following detailed description of exemplary embodiments and the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Like reference numerals may refer to like elements throughout. In the drawings, the thickness of layers and regions may be exaggerated for clarity.
A hermetic sealing method using a self-propagating solder film, as shown in FIGS. 1 and 4, establishes a sealing cavity; the package cavity includes: a base plate 7, the base plate 7 being, for example, a ceramic base plate; the side wall 4 is arranged on the ceramic bottom plate 7, and a self-propagating brazing film 6 is arranged between the side wall 4 and the ceramic bottom plate 7; the cover plate 3 is arranged on the side wall 4, and a self-propagating brazing film 6 is arranged between the cover plate 3 and the side wall 4;
placing a chip 8 in the package cavity;
placing the packaging cavity in a vacuum chamber 2; the vacuum chamber comprises an optical window 1;
igniting the self-propagating brazing film 6 in a non-contact ignition mode, and realizing the sealing connection of the ceramic bottom plate 7 and the side wall of the packaging cavity and the sealing connection of the cover plate and the side wall through self-propagating reaction.
In this embodiment, the cover plate 3 is, for example, a glass cover plate, and the side walls 4 are, for example, copper side walls. The chip 8 is placed on a ceramic base plate 7. A self-propagating brazing film 6 is arranged at the joint between the glass cover plate and the copper side wall, and the self-propagating brazing film 6 is arranged at the joint between the copper side wall and the ceramic bottom plate. And the clamping force is applied on the glass cover plate, so that the thermodynamic condition of the formed welding spot can be improved, the flowing and filling of the self-propagating brazing film 6 when the self-propagating brazing film is liquid brazing filler metal are promoted, and the interconnection quality and the reliability of the welding spot can be improved. In the embodiment, when the environmental temperature of the packaging cavity is 100 ℃ and the applied pressure is 2 MPa, the shear strength of the self-propagating solder joint is optimized to 35 MPa.
Placing a chip 8 in the package cavity; i.e. the chip 8 is placed on the ceramic base plate 7. Further, the chip is, for example, a high temperature pressure sensor, an ultraviolet LED chip, or a laser LED chip. In the present embodiment, the chip 8 is a high temperature pressure sensor.
Placing the packaging cavity in a vacuum chamber 2; the vacuum chamber 2 comprises an optical window 1; and igniting the self-propagating brazing film 6 in a non-contact ignition mode, and realizing the sealing connection of the ceramic bottom plate 7 and the copper side wall of the packaging cavity and the sealing connection of the glass cover plate and the copper side wall through self-propagating reaction. Further, the non-contact ignition mode comprises laser incidence ignition or inductive heating ignition. In this embodiment, the laser beam incident through the optical window 1 performs non-contact ignition on the self-propagating brazing film 6 already disposed between the copper side wall and the glass cover plate and the self-propagating brazing film 6 between the copper side wall and the ceramic bottom plate, ignites the self-propagating brazing film 6, and performs a self-propagating reaction to seal the copper side wall and the glass cover plate and seal the copper side wall and the ceramic bottom plate. The gap between the copper side wall and the glass cover plate and the gap between the copper side wall and the ceramic bottom plate are sealed by non-contact ignition and self-propagating reaction generated by igniting the self-propagating brazing film, so that the sealing and welding temperature of the packaging cavity is effectively reduced, the heat damage to the chip in the packaging cavity is avoided, and the air tightness of the chip package in the packaging cavity is effectively improved.
Further, the ceramic base plate comprises a metalized layer arranged on the ceramic base plate, and the metalized layer is arranged between the self-propagating brazing film and the base plate.
Further, as shown in fig. 2, the self-propagating brazing film comprises a first brazing filler metal layer, a self-propagating multilayer film and a second brazing filler metal layer which are stacked in sequence, wherein the self-propagating multilayer film comprises one or more of Ti-Al, Al-Ni, Ti-Ni, Ni-Si, Nb-Si, Al-CuOx and Al-Pt films, and the melting point of the first brazing filler metal layer and/or the second brazing filler metal layer is lower than the instantaneous highest reaction temperature of the self-propagating multilayer film 10. As shown in fig. 1 and fig. 2, the self-propagating solder film is applied to the package cavity seal to hermetically connect the sidewall 4 and the cover 3 and the sidewall 4 and the ceramic base plate 7. In this embodiment, the side wall 4 is a copper side wall, and the sealing cover 3 is a glass cover plate. The self-propagating brazing film comprises a first brazing filler metal layer 12, a self-propagating multilayer film 10 and a second brazing filler metal layer 11 which are sequentially stacked, wherein specifically, for example, the first brazing filler metal layer 12 is used for connecting the side wall 4, namely, the first brazing filler metal layer 12 is arranged between the side wall 4 and the self-propagating multilayer film 10; the second solder layer 11 is used for connecting the cover plate 3, i.e. the second solder layer 11 is interposed between the cover plate 3 and the self-propagating multilayer film 1.
The self-propagating multilayer film 10 provided by the invention comprises one or more of Ti-Al, Al-Ni, Ti-Ni, Ni-Si, Nb-Si, Al-CuOx and Al-Pt films.
The self-propagating multilayer film 10 is, for example, an ABAB periodic structure, the single-layer thickness is 10-100nm, the total thickness is 10-2000 μm, the reaction speed of the self-propagating multilayer film is in inverse proportion to the diffusion distance, namely, the smaller the single-layer film thickness is, the faster the combustion speed is, for example, an Al-Ni system, the reaction speed is 2-10 m/s, and the maximum reaction temperature is more than 1700 ℃.
The self-propagating multilayer film 10 is a composite multilayer structure formed by alternately depositing two nano-scale thicknesses of elements (such as one or more of Ti-Al, Al-Ni, Ti-Ni, Ni-Si, Nb-Si, Al-CuOx, Al-Pt films) with negative mixed enthalpy (negative enthalpy of mixing). The composite multilayer film material releases negative enthalpy heat (1381 Joule/g for Ni-Al) after being ignited, and can instantaneously (within dozens of milliseconds) reach extremely high heating and quenching speed (-100K/s) to form local temperature of about 1500 ℃. The temperature in the chip region or the substrate can finally be less than 100 ℃, as shown in fig. 3, by the transfer of the first solder layer, the second solder layer with a gradient distribution of melting points.
Further, the melting point of the first solder layer 12 and/or the second solder layer 11 is distributed in a gradient manner in the thickness direction far away from the self-propagating multilayer film 6. The first brazing filler metal layer and the second brazing filler metal layer are welded metal with a melting point lower than the instantaneous local highest temperature of the combustion reaction of the self-propagating multilayer film at a position far away from the self-propagating multilayer film (namely, one side of a side wall or a cover plate or a ceramic bottom plate), and the first brazing filler metal layer and/or the second brazing filler metal layer are made of bismuth-based, zinc-based or aluminum-based alloy. In this embodiment, a high-temperature chip is packaged by a package cavity, and the first solder layer and the second solder layer are made of metal bases, so that adverse effects of the reaction temperature of the self-propagating multilayer film on the high-temperature chip can be effectively avoided
As a further preferred embodiment of the present invention, in order to further improve the welding performance, the first solder layer and the second solder layer proposed by the present invention are formed in a thickness direction away from the self-propagating multilayer film, that is: the melting points of the ceramic base plate and the self-propagating multilayer film are gradually distributed in a gradient way from the position close to the self-propagating multilayer film (one side of the self-propagating multilayer film) to the position far away from the self-propagating multilayer film (one side of the side wall/the cover plate/the ceramic base plate).
The first solder layer and the second solder layer proposed by the invention are, for example, in a gradient composition distribution in the thickness direction, so that their melting points are also in a gradient distribution. Specifically, a gradient with a melting point decreasing gradually is formed from one side of the self-propagating multilayer film to one side of the side wall/cover plate/ceramic bottom plate, the lowest point of the melting point gradient is lower than the highest point capable of being borne by the high-temperature chip, and the highest point of the melting point gradient is lower than the highest instantaneous temperature of self-propagating brazing, so that the full melting of a welding spot and the safety of the high-temperature chip between brazing process windows are guaranteed.
The transient reaction temperature profile of the self-propagating brazing film is shown in fig. 3. It can be seen from the temperature profile that the entire self-propagating braze film produces a central high temperature and a steep temperature zone facing the adjacent zones, leaving a very small heat affected zone (depth 20-100 microns). Therefore, the thermal adaptation of the brazing filler metal to the self-propagating multilayer film and the side wall/cover plate/ceramic bottom plate can be greatly improved, and the thermal reliability of the whole welding spot is improved.
Furthermore, the material of the first brazing filler metal layer and/or the second brazing filler metal layer comprises one or two of binary or ternary zinc-based alloy and binary or ternary bismuth-based alloy;
further, the melting point range of the contact area of the first brazing filler metal layer and/or the second brazing filler metal layer and the self-propagating multilayer film is 1100-400 ℃; the melting point range of the welding interface area of the first brazing filler metal layer and/or the second brazing filler metal layer is 250-380 ℃.
Further, the melting point range of the contact area of the first solder layer and/or the second solder layer and the self-propagating multilayer film is 1064-420 ℃, and the melting point range of the welding interface area of the first solder layer and/or the second solder layer is 196-381 ℃.
In the embodiment, the melting point range of the first solder layer and/or the second solder layer at the position close to the self-propagating multilayer film is 1064-420 ℃, and the melting point range at the position far away from the self-propagating multilayer film is 196-381 ℃.
In particular, for high temperature or high power devices, the melting point of the first solder layer and/or the second solder layer at the position far from the self-propagating multilayer film, such as the contact area with the sidewall/cover plate/ceramic bottom plate, i.e. the welding interface area, ranges from 250 ℃ to 385 ℃, preferably from 271 ℃ to 381 ℃.
Further, for high temperature devices, the material of the first solder layer and/or the second solder layer is preferably a bismuth-based alloy system or a zinc-aluminum-based alloy system, and the melting point of the first solder layer and/or the second solder layer is in a range of 271 ℃ to 381 ℃ at a position far away from the self-propagating multilayer film, such as a contact area with a chip or a substrate, namely a welding interface area.
It is to be understood that the above detailed description is only exemplary of the embodiments taken to illustrate the principles of the invention, and that the invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A hermetic packaging method, comprising the steps of:
establishing a packaging cavity; the package cavity includes:
a base plate;
the side wall is arranged on the bottom plate, and a self-propagating brazing film is arranged between the side wall and the bottom plate;
the cover plate is arranged on the side wall, and a self-propagating brazing film is arranged between the cover plate and the side wall;
placing a chip in the package cavity;
placing the packaging cavity in a vacuum chamber; the vacuum chamber comprises an optical window;
and igniting the self-propagating brazing film in a non-contact ignition mode, and realizing the sealing connection of the bottom plate and the side wall of the packaging cavity and the sealing connection of the cover plate and the side wall through self-propagating reaction.
2. The hermetic packaging method according to claim 1, wherein the chip is a pressure sensor, an ultraviolet LED chip or a laser LED chip.
3. A hermetic sealing method according to claim 1, wherein the non-contact ignition method is laser incident ignition or induction heating ignition.
4. A hermetic sealing method according to claim 1, further comprising a metallization layer disposed on the base plate, the metallization layer being interposed between the self-propagating solder film and the base plate.
5. The hermetic package method according to claim 1, wherein the self-propagating brazing film comprises a first brazing material layer, a self-propagating multilayer film, a second brazing material layer, and the self-propagating multilayer film comprises Ti-Al, Al-Ni, Ti-Ni, Ni-Si, Nb-Si, Al-CuO x And the Al-Pt thin film, wherein the melting point of the first brazing filler metal layer and/or the second brazing filler metal layer is lower than the highest instantaneous reaction temperature of the self-propagating multilayer film.
6. A hermetic sealing method according to claim 5, wherein the first solder layer and/or the second solder layer have a gradient distribution of melting points decreasing in a thickness direction away from the self-propagating multilayer film.
7. A hermetic sealing method according to claim 6, wherein the material of the first solder layer and/or the second solder layer comprises bismuth-based, zinc-based or aluminum-based alloy.
8. A hermetic sealing method according to claim 6, wherein the material of the first solder layer and/or the second solder layer comprises one or two of binary or ternary zinc-based, binary or ternary bismuth-based alloys.
9. The hermetic sealing method according to claim 6, wherein the melting point of the contact area of the first solder layer and/or the second solder layer and the self-propagating multilayer film is in the range of 1100 ℃ to 400 ℃; the melting point range of the welding interface area of the first brazing filler metal layer and/or the second brazing filler metal layer is 100-400 ℃.
10. The hermetic package method according to claim 8, wherein the melting point of the contact area of the first solder layer and/or the second solder layer and the self-propagating multilayer film is 1064-420 ℃, and the melting point of the welding interface area of the first solder layer and/or the second solder layer is 196-381 ℃.
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| CN116240484A (en) * | 2022-12-15 | 2023-06-09 | 江苏鑫华能环保工程股份有限公司 | Preparation method of aluminum-copper composite welding material |
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| CN114999943B (en) | 2024-02-02 |
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