CN114744062B - Three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction - Google Patents
Three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction Download PDFInfo
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Abstract
The invention discloses a three-dimensional trench silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction, and belongs to the technical field of photoelectric detectors. The electrode detector comprises an isolation silicon body, wherein the isolation silicon body is made of a two-dimensional material InSe/GaAs heterojunction material, the two-dimensional material InSe/GaAs heterojunction is a type II heterostructure with a direct band gap, and the type II heterostructure comprises a Ga end contact heterostructure and an As end contact heterostructure; the band gap of the Ga end-contacted heterostructure is 0.62-1.32eV, and the band gap of the As end-contacted heterostructure is 1.84-1.95eV. Compared with the single-layer InSe carrier mobility, the two-dimensional InSe/GaAs heterojunction is greatly improved, the light absorption range is widened by the heterostructure, and the absorption enhancement of visible light and infrared regions is increased.
Description
Technical Field
The invention belongs to the technical field of photoelectric detectors, and particularly relates to a three-dimensional trench silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction.
Background
Visible and near infrared detectors made of crystalline silicon dominate the current photodetector market, but silicon-based semiconductors have some limitations in the use of photodetectors. Firstly, the manufacturing technology of the silicon-based semiconductor is close to the limit of Moore's law, when the size of a device is reduced to a certain extent, classical physical theory is not applicable any more, and phenomena of short channel effect and the like affecting the device can also occur; secondly, the silicon-based photoelectric detector has small absorption coefficient for light and narrow absorption spectrum, and most of light with infrared wavelength cannot be absorbed, so that the wide application of the silicon-based photoelectric detector is greatly limited; on the other hand, the diffusion of carriers caused by longer carrier lifetime in silicon-based materials can interfere with optical signal detection between adjacent pixels. There is an increasing demand for new materials that have good flexibility, high light absorption efficiency, broad light response range, and good transparency. The emerging two-dimensional material has a plurality of excellent physical properties, can make up for the defects of the bulk material silicon process, and has good application prospect for future high-performance photoelectric detectors.
The two-dimensional material is widely focused by scientific researchers with the excellent characteristics, and the characteristics are as follows: atomic-scale thickness provides two-dimensional nanomaterials with inherent elastic and nearly transparent properties; the quantum confinement effect in the vertical direction enables the two-dimensional nano material to have more excellent photoelectric characteristics compared with the bulk three-dimensional material; and thirdly, the band gap is adjustable, and the band gap is regulated by an external field so as to realize the effective regulation of the light absorption characteristic.
Disclosure of Invention
In order to solve the defects existing in the prior art, the invention aims to provide a three-dimensional trench silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction. The three-dimensional groove silicon electrode detector can be applied to photoelectric detectors such as visible light and infrared detectors; for a photoelectric detector, the introduction of the two-dimensional material InSe/GaAs heterojunction greatly enhances the spectral response range and the optical response of the photoelectric detector; the long service life of the interlayer exciton and the stability at room temperature enable the exciton to be controlled by an external electric field and an optical field, and open a road for the development of novel exciton devices.
The aim of the invention is achieved by the following technical scheme:
the three-dimensional trench silicon electrode detector based on the two-dimensional material InSe/GaAs heterojunction comprises an isolation silicon body, wherein the isolation silicon body is made of the two-dimensional material InSe/GaAs heterojunction, the two-dimensional material InSe/GaAs heterojunction is a type II heterostructure with a direct band gap, and the type II heterostructure comprises a Ga end contact heterostructure (SM-n 2) and an As end contact heterostructure (SM-n 1); the band gap of the Ga end-contacted heterostructure is 0.62-1.32eV, and the band gap of the As end-contacted heterostructure is 1.84-1.95eV.
The two-dimensional material InSe/GaAs heterojunction material is obtained by the following preparation method:
(1) When the nano imprinting soft template (stamp) at the top of the glass slide contacts the two-dimensional material GaAs crystal on the adhesive tape, and the adhesive tape is separated, a two-dimensional material GaAs thin layer can be left on the nano imprinting soft template, and the ultrathin two-dimensional material GaAs on the nano imprinting soft template is searched under a microscope;
(2) Preparing an ultrathin two-dimensional material InSe on a substrate;
(3) The spatial positions of the two-dimensional material GaAs and the two-dimensional material InSe are resolved through a microscope, and the two three-dimensional displacement platforms enable the two-dimensional material GaAs and the two-dimensional material InSe to be completely consistent in the spatial positions so as to be overlapped and contacted;
(4) The slide glass with the two-dimensional material GaAs is slightly applied with force, the two-dimensional material GaAs and the two-dimensional material InSe are adhered together, the nano-imprinting soft template and the InSe/GaAs heterojunction are slowly separated, the nano-imprinting soft template is separated from the GaAs, and the InSe/GaAs heterojunction is left on the substrate.
Further, the nano-imprint soft template (stamp) in the step (1) is preferably PDMSstamp, PPC and pmmamamp; the PDMS is polydimethylsiloxane, the PMMA is polymethyl methacrylate, and the PPC is polymethyl ethylene carbonate.
The ultrathin film in the step (1) and the step (2) is a monolayer atomic thickness.
The preparation in step (2) is preferably prepared by Chemical Vapor Deposition (CVD).
The chemical vapor deposition method specifically comprises the following steps: placing the substrate in a furnace chamber, circulating one or more gaseous precursors in the furnace chamber, and then depositing the precursors on the surface of the substrate by reaction; the precursor refers to InI and Se powder for preparing InSe.
Further, the substrate in the step (2) is preferably a silicon wafer.
And (3) the glass slide where the two-dimensional material GaAs is located in the step (4) refers to the fact that the ultrathin two-dimensional material GaAs nano imprinting soft template is printed on the top of the glass slide.
And (4) slightly applying force, namely lightly touching the finger tip, so that the two-dimensional materials are adhered together.
The three-dimensional groove silicon electrode detector based on the two-dimensional material InSe/GaAs heterojunction further comprises a peripheral electrode, a central electrode, a nested part, an electrode contact layer, a silicon dioxide protective layer and a silicon substrate; a hollow peripheral electrode is arranged on the silicon dioxide protective layer, and a silicon substrate and a central electrode are arranged in the peripheral electrode; the silicon substrate comprises a substrate part and a nesting part, the cross section of the substrate part is identical to that of the lower silicon dioxide protective layer, the nesting part is embedded in the peripheral electrode, isolation silicon bodies are filled between the central electrode and the peripheral electrode and between the nesting part and the peripheral electrode, electrode contact layers are arranged at the tops of the peripheral electrode and the central electrode, electrode contact ports are arranged on the electrode contact layers, and an upper silicon dioxide protective layer is arranged at the top of the isolation silicon body.
The height of the electrode detector is 300-500 mu m;
the cross section of the silicon dioxide protective layer is quadrilateral, and the thickness is 1 mu m;
the peripheral electrode is of a hollow straight quadrangular prism structure, the peripheral electrode is n+ heavy doped phosphorus silicon (or p+ heavy doped boron silicon), the electrode width of the n+ heavy doped phosphorus silicon (or p+ heavy doped boron silicon) is 10 mu m, and the doping concentration is 10 19 cm -3 ；
The substrate part is preferably a p-type silicon substrate, and the p-type lightly doped boron silicon has the doping concentration of 10 12 cm -3 The purpose is to stabilize the mechanical structure of the device, without any contribution to the performance of the detector, with a height of 30-50 μm;
the nesting part is preferably in a waist-round shape in cross section and has a height of 30-50 mu m;
the cross section of the central electrode is preferably in a waist shape, the central electrode is p+ heavy doped boron silicon (or n+ heavy doped phosphorus silicon), the electrode width of the p+ heavy doped boron silicon (or n+ heavy doped phosphorus silicon) is 10 mu m, and the central electrode is doped with p+ heavy doped boron silicon (or n+ heavy doped phosphorus silicon)The concentration is 10 19 cm -3 ；
The electrode contact layer is an aluminum layer, and the thickness of the electrode is 1 mu m.
The isolation silicon body is a two-dimensional InSe/GaAs heterojunction, and the width is 50 mu m.
According to the two-dimensional material InSe/GaAs heterojunction, heterostructures with different stacking models are built for fully optimized single-layer InSe and GaAs, and six types of stacking models are obtained as a result, and are marked as a stacking model n (abbreviated as SM-n; n=1, 2, 3, 4, 5 and 6). Structurally, single-layer GaAs has two terminals, a Ga end and an As end, and different terminals may cause different properties and properties when contacting InSe to build a heterostructure. Thus, we define As terminals and Ga terminals As class 1 and class 2 terminals, respectively, each SM-n being divided into two types SM-n1 and SM-n2. The heterostructure formed by As-terminal contact monolayer InSe is defined As SM-n1 and the heterostructure formed by Ga-terminal contact monolayer InSe is defined As SM-n2. The InSe/GaAs heterojunction is prepared by a manual fixed-point transfer method and a CVD synthesis method, wherein the manual fixed-point transfer method is characterized in that the common transfer medium comprises PDMS, PPC and PMMA; in addition, chemical Vapor Deposition (CVD) is also a common laboratory synthesis method, and different types of heterojunction growth can be achieved by regulating the temperature, composition, speed and direction of the gas flow.
As can be seen from the light absorption coefficient maps of SM-n1 and SM-n2, in the visible region, part of the light is absorbed by a single layer of GaAs, and a single layer of InSe hardly absorbs light; whereas in the ultraviolet region, both single layers InSe and GaAs absorb part of the light. Compared with the isolated monomer, the heterostructure not only obviously expands the light absorption range, even expands the infrared region, but also obviously improves the light absorption intensity. The red shift phenomenon of the absorption range may be caused by the reduced band gap due to the construction of the heterostructure. The reason for the increase in light absorption intensity may be due to interlayer coupling in the heterostructure, which makes it easier for electrons to flow from GaAs layer to InSe layer. The result shows that the utilization efficiency of single-layer InSe to sunlight can be obviously improved by constructing a heterostructure by using a GaAs single layer, and the expected effect is achieved.
Compared with the prior art, the invention has the following advantages and effects:
the patent utilizes a first sexual principle calculation method to build an InSe/GaAs heterostructure by stacking single layers of InSe and GaAs; the calculation results show that all heterostructures are direct bandgap type II heterostructures, wherein the Ga-end contacted heterostructure (SM-n 2) exhibits more stable characteristics, has a smaller bandgap (0.62-1.32 eV), and has a larger bandgap (1.84-1.95 eV) and an As-end contacted heterostructure (SM-n 1) at a suitable band edge position for field effect transistors, photodetectors and photovoltaic devices. Calculation of the light absorption coefficient shows that: by constructing heterostructures SM-n1 and SM-n2, the mobility of the InSe carriers is greatly improved compared with that of single-layer InSe carriers, the heterostructures widen the light absorption range, and the absorption enhancement of visible light and infrared regions is increased. The prediction result proves that the InSe/GaAs heterostructure has extremely wide application prospects in electrode detectors and solar energy utilization.
For a photoelectric detector, the introduction of the two-dimensional material InSe/GaAs heterojunction greatly enhances the spectral response range and the optical response of the photoelectric detector; the long service life of the interlayer exciton and the stability at room temperature enable the exciton to be controlled by an external electric field and an optical field, and open a road for the development of novel exciton devices.
Drawings
FIG. 1 is a diagram of a novel three-dimensional trench electrode silicon detector array based on a two-dimensional material InSe/GaAs heterojunction according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a novel three-dimensional trench silicon electrode detector based on two-dimensional InSe/GaAs heterojunction;
FIG. 3 is a side view of a novel three-dimensional trench silicon electrode detector structure based on a two-dimensional material InSe/GaAs heterojunction according to an embodiment of the present invention;
FIG. 4 is a graph showing the calculated absorption spectrum of an InSe/GaAs heterojunction based on the HSE06 method according to an embodiment of the present invention;
FIG. 5 is a top view and a side view of six (a) - (f) SM-n1 InSe/GaAs heterostructures according to one embodiment of the present invention;
fig. 6 is a schematic diagram of an InSe/GaAs heterojunction fabrication stack in accordance with an embodiment of the present invention.
Wherein: 1. a peripheral electrode; 2. a center electrode; 3. a nesting portion; 4. an electrode contact layer; 5. a lower silicon dioxide protective layer; 6. a base portion; 7. isolating the silicon body.
Detailed Description
The present invention will be described in further detail with reference to examples, but embodiments of the present invention are not limited thereto.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
As used herein, the term "comprising" or "including" can be open, semi-closed, and closed. In other words, the term also includes "consisting essentially of …," or "consisting of ….
The embodiment of the invention provides a three-dimensional trench silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction. The three-dimensional groove silicon electrode detector can be applied to photoelectric detectors such as visible light and infrared detectors; for a photoelectric detector, the introduction of the two-dimensional material InSe/GaAs heterojunction greatly enhances the spectral response range and the optical response of the photoelectric detector; the long service life of the interlayer exciton and the stability at room temperature enable the exciton to be controlled by an external electric field and an optical field, and open a road for the development of novel exciton devices.
The three-dimensional trench silicon electrode detector based on a two-dimensional material InSe/GaAs heterojunction comprises an isolation silicon body 7, wherein the isolation silicon body 7 is made of a two-dimensional material InSe/GaAs heterojunction material, the two-dimensional material InSe/GaAs heterojunction is a type II heterostructure with a direct band gap, and the type II heterostructure comprises a Ga end contact heterostructure (SM-n 2) and an As end contact heterostructure (SM-n 1); the band gap of the Ga end-contacted heterostructure is 0.62-1.32eV, and the band gap of the As end-contacted heterostructure is 1.84-1.95eV.
The two-dimensional material InSe/GaAs heterojunction material is obtained by the following preparation method:
(1) When the nano imprinting soft template (stamp) at the top of the glass slide contacts the two-dimensional material GaAs crystal on the adhesive tape, and the adhesive tape is separated, a two-dimensional material GaAs thin layer can be left on the nano imprinting soft template, and the ultrathin two-dimensional material GaAs on the nano imprinting soft template is searched under a microscope;
(2) Preparing an ultrathin two-dimensional material InSe on a substrate by adopting a Chemical Vapor Deposition (CVD) method;
(3) The spatial positions of the two-dimensional material GaAs and the two-dimensional material InSe are resolved through a microscope, and the two three-dimensional displacement platforms enable the two-dimensional material GaAs and the two-dimensional material InSe to be completely consistent in the spatial positions so as to be overlapped and contacted;
(4) The slide glass with the two-dimensional material GaAs is slightly applied with force, the two-dimensional material GaAs and the two-dimensional material InSe are adhered together, the nano-imprinting soft template and the InSe/GaAs heterojunction are slowly separated, the nano-imprinting soft template is separated from the GaAs, and the InSe/GaAs heterojunction is left on the substrate.
A schematic of InSe/GaAs heterojunction fabrication stack is shown in fig. 6.
The nano-imprinting soft templates (templates) in step (1), preferably PDMSstamp, PPC and pmmamamp; the PDMS is polydimethylsiloxane, the PMMA is polymethyl methacrylate, and the PPC is polymethyl ethylene carbonate.
The ultrathin film in the step (1) and the step (2) is a monolayer atomic thickness.
The chemical vapor deposition method in the step (2) specifically comprises the following steps: placing the substrate in a furnace chamber, circulating one or more gaseous precursors in the furnace chamber, and then depositing the precursors on the surface of the substrate by reaction; the precursor refers to InI and Se powder for preparing InSe.
The substrate in step (2) is preferably a silicon wafer.
And (3) the glass slide where the two-dimensional material GaAs is located in the step (4) refers to the fact that the ultrathin two-dimensional material GaAs nano imprinting soft template is printed on the top of the glass slide.
And (4) slightly applying force, namely lightly touching the finger tip, so that the two-dimensional materials are adhered together.
As shown in fig. 1-3, a three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction further comprises a peripheral electrode 1, a central electrode 2, a nesting portion 3, an electrode contact layer 4, a silicon dioxide protective layer 5 and a silicon substrate; a hollow peripheral electrode 1 is arranged on the silicon dioxide protective layer 5, and a silicon substrate and a central electrode 2 are arranged in the peripheral electrode 1; the silicon substrate comprises a substrate part 6 and a nesting part 3, the cross section of the substrate part 6 is the same as that of a lower silicon dioxide protective layer 5, the nesting part 3 is embedded in a peripheral electrode 1, an isolation silicon body 7 is filled between a central electrode 2 and the peripheral electrode 1 and between the nesting part 3 and the peripheral electrode 1, electrode contact layers 4 are arranged at the tops of the peripheral electrode 1 and the central electrode 2, electrode contact ports are arranged on the electrode contact layers 4, and an upper silicon dioxide protective layer is arranged at the top of the isolation silicon body 7.
The height of the electrode detector is 300-500 mu m;
the cross section of the silicon dioxide protective layer 5 is quadrilateral, and the thickness is 1 mu m;
the peripheral electrode 1 is a hollow straight quadrangular prism structure, the width of the n+ heavily doped phosphorus silicon (p+ heavily doped boron silicon) electrode is 10 μm, and the doping concentration is 10% 19 cm -3 ；
The substrate portion 6 is preferably a p-type silicon substrate, p-type lightly doped boron silicon with a doping concentration of 10 12 cm -3 The purpose is to stabilize the mechanical structure of the device, without any contribution to the performance of the detector, with a height of 30-50 μm;
the nesting portion 3 is preferably of a waist-round cross section and has a height of 30-50 μm;
the cross section of the central electrode 2 is preferably in a waist shape, the width of the p+ heavily doped boron silicon (n+ heavily doped phosphorus silicon) electrode is 10 mu m, and the doping concentration is 10 19 cm -3 ；
The electrode contact layer 4 is an aluminum layer, and the thickness of the electrode is 1 mu m.
The isolation silicon body 7 is a two-dimensional material InSe/GaAs heterojunction, and the width is 50 mu m.
According to the two-dimensional material InSe/GaAs heterojunction, heterostructures with different stacking models are built for fully optimized single-layer InSe and GaAs, and six types of stacking models are obtained as a result, and are marked as a stacking model n (abbreviated as SM-n; n=1, 2, 3, 4, 5 and 6). Structurally, single-layer GaAs has two terminals, a Ga end and an As end, and different terminals may cause different properties and properties when contacting InSe to build a heterostructure. Thus, we define As terminals and Ga terminals As class 1 and class 2 terminals, respectively, each SM-n being divided into two types SM-n1 and SM-n2. The heterostructure formed by As-terminal contact monolayer InSe is defined As SM-n1 and the heterostructure formed by Ga-terminal contact monolayer InSe is defined As SM-n2. Fig. 5 shows top and side views of six InSe/GaAs heterostructures of SM-n 1. The InSe/GaAs heterojunction is prepared by a manual fixed-point transfer method and a CVD synthesis method, wherein the manual fixed-point transfer method is characterized in that the common transfer medium comprises PDMS, PPC and PMMA; in addition, chemical Vapor Deposition (CVD) is also a common laboratory synthesis method, and different types of heterojunction growth can be achieved by regulating the temperature, composition, speed and direction of the gas flow.
The light absorption coefficients of SM-11 and SM-12 are shown in FIG. 4. In the visible region, part of the light is absorbed by a single layer of GaAs, and the single layer of InSe hardly absorbs the light; whereas in the ultraviolet region, both single layers InSe and GaAs absorb part of the light. Compared with the isolated monomer, the heterostructure not only obviously expands the light absorption range, even expands the infrared region, but also obviously improves the light absorption intensity. The red shift phenomenon of the absorption range may be caused by the reduced band gap due to the construction of the heterostructure. The reason for the increase in light absorption intensity may be due to interlayer coupling in the heterostructure, which makes it easier for electrons to flow from GaAs layer to InSe layer. The result shows that the utilization efficiency of single-layer InSe to sunlight can be obviously improved by constructing a heterostructure by using a GaAs single layer, and the expected effect is achieved.
The patent utilizes a first sexual principle calculation method to build an InSe/GaAs heterostructure by stacking single layers of InSe and GaAs. The calculation results show that all heterostructures are direct bandgap type II heterostructures, wherein the Ga-end contacted heterostructure (SM-n 2) exhibits more stable characteristics, has a smaller bandgap (0.62-1.32 eV), and has a larger bandgap (1.84-1.95 eV) and an As-end contacted heterostructure (SM-n 1) at a suitable band edge position for field effect transistors, photodetectors and photovoltaic devices. Calculation of the light absorption coefficient shows that: by constructing heterostructures SM-n1 and SM-n2, the mobility of the InSe carriers is greatly improved compared with that of single-layer InSe carriers, the heterostructures widen the light absorption range, and the absorption enhancement of visible light and infrared regions is increased. The prediction result proves that the InSe/GaAs heterostructure has extremely broad application prospect in solar energy utilization.
For a photoelectric detector, the introduction of the two-dimensional material InSe/GaAs heterojunction greatly enhances the spectral response range and the optical response of the photoelectric detector; the long service life of the interlayer exciton and the stability at room temperature enable the exciton to be controlled by an external electric field and an optical field, and open a road for the development of novel exciton devices.
The above examples are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above examples, and any other changes, modifications, substitutions, combinations, and simplifications that do not depart from the spirit and principle of the present invention should be made in the equivalent manner, and the embodiments are included in the protection scope of the present invention.
Claims (9)
1. A three-dimensional groove silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction is characterized in that: the semiconductor device comprises an isolation silicon body, wherein the isolation silicon body is made of a two-dimensional material InSe/GaAs heterojunction material, the two-dimensional material InSe/GaAs heterojunction is a type II heterostructure with a direct band gap, and the type II heterostructure comprises a Ga end contact heterostructure and an As end contact heterostructure; the band gap of the Ga end-contacted heterostructure is 0.62-1.32eV, and the band gap of the As end-contacted heterostructure is 1.84-1.95eV;
the device also comprises a peripheral electrode, a central electrode, a nested part, an electrode contact layer, a lower silicon dioxide protective layer and a silicon substrate; a hollow peripheral electrode is arranged on the lower silicon dioxide protective layer, and a silicon substrate and a central electrode are arranged in the peripheral electrode; the silicon substrate comprises a substrate part and a nesting part, the cross section of the substrate part is identical to that of the lower silicon dioxide protective layer, the nesting part is embedded in the peripheral electrode, isolation silicon bodies are filled between the central electrode and the peripheral electrode and between the nesting part and the peripheral electrode, electrode contact layers are arranged at the tops of the peripheral electrode and the central electrode, electrode contact ports are arranged on the electrode contact layers, and an upper silicon dioxide protective layer is arranged at the top of the isolation silicon body.
2. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 1, wherein: the two-dimensional material InSe/GaAs heterojunction material is obtained by the following preparation method: (1) The nano-imprinting soft template at the top of the glass slide contacts with the two-dimensional material GaAs crystal on the adhesive tape, and when the adhesive tape is separated, a two-dimensional material GaAs thin layer can be left on the nano-imprinting soft template, and the ultrathin two-dimensional material GaAs on the nano-imprinting soft template is searched under a microscope;
(2) Preparing an ultrathin two-dimensional material InSe on a substrate;
(3) The spatial positions of the two-dimensional material GaAs and the two-dimensional material InSe are resolved through a microscope, and the two three-dimensional displacement platforms enable the two-dimensional material GaAs and the two-dimensional material InSe to be completely consistent in the spatial positions so as to be overlapped and contacted;
(4) The slide glass with the two-dimensional material GaAs is slightly applied with force, the two-dimensional material GaAs and the two-dimensional material InSe are adhered together, the nano-imprinting soft template and the InSe/GaAs heterojunction are slowly separated, the nano-imprinting soft template is separated from the GaAs, and the InSe/GaAs heterojunction is left on the substrate.
3. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 2, wherein: the nano-imprinting soft template in the step (1) is PDMS stamp, PPC and PMMAstamp; the PDMS is polydimethylsiloxane, the PMMA is polymethyl methacrylate, and the PPC is polymethyl ethylene carbonate.
4. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 2, wherein: further, the ultrathin layers in the step (1) and the step (2) are single-layer atomic thicknesses;
the preparation in the step (2) is prepared by adopting a chemical vapor deposition method;
the substrate in the step (2) is a silicon wafer.
5. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 1, wherein: the height of the electrode detector is 300-500 mu m; the cross section of the silicon dioxide protective layer is quadrilateral, and the thickness is 1 mu m.
6. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 1, wherein: the peripheral electrode is of a hollow straight quadrangular prism structure, the peripheral electrode is n+ heavy doped phosphorus silicon or p+ heavy doped boron silicon, the electrode width of the n+ heavy doped phosphorus silicon or p+ heavy doped boron silicon is 10 mu m, and the doping concentration is 10 19 cm -3 。
7. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 1, wherein: the substrate part is a p-type silicon substrate, the p-type lightly doped boron silicon has the doping concentration of 10 12 cm -3 The height is 30-50 μm.
8. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 1, wherein: the central electrode is p+ heavily doped boron silicon or n+ heavily doped phosphorus silicon, the electrode width of the p+ heavily doped boron silicon or n+ heavily doped phosphorus silicon is 10 mu m, and the doping concentration is 10 19 cm -3 。
9. The three-dimensional trench silicon electrode detector based on two-dimensional material InSe/GaAs heterojunction as claimed in claim 1, wherein: the height of the nesting part is 30-50 mu m;
the electrode contact layer is an aluminum layer, and the thickness of the electrode is 1 mu m.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107749433A (en) * | 2017-08-30 | 2018-03-02 | 中国科学院上海技术物理研究所 | A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN108447924A (en) * | 2018-03-19 | 2018-08-24 | 齐鲁工业大学 | The optical detector of Van der Waals hetero-junctions based on two-dimentional indium selenide and black phosphorus and its preparation |
| CN110611009A (en) * | 2019-09-06 | 2019-12-24 | 湘潭大学 | Nested three-dimensional groove electrode silicon detector |
| CN110993703A (en) * | 2019-11-27 | 2020-04-10 | 中国科学院金属研究所 | GaN/MoS2Two-dimensional van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN111987226A (en) * | 2020-08-21 | 2020-11-24 | 深圳大学 | Photoelectric detector and preparation method thereof |
| CN112582542A (en) * | 2020-12-06 | 2021-03-30 | 南开大学 | Monomolecular field effect transistor based on two-dimensional van der Waals heterostructure and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7175704B2 (en) * | 2002-06-27 | 2007-02-13 | Diamond Innovations, Inc. | Method for reducing defect concentrations in crystals |
-
2022
- 2022-03-29 CN CN202210320603.4A patent/CN114744062B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107749433A (en) * | 2017-08-30 | 2018-03-02 | 中国科学院上海技术物理研究所 | A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN108447924A (en) * | 2018-03-19 | 2018-08-24 | 齐鲁工业大学 | The optical detector of Van der Waals hetero-junctions based on two-dimentional indium selenide and black phosphorus and its preparation |
| CN110611009A (en) * | 2019-09-06 | 2019-12-24 | 湘潭大学 | Nested three-dimensional groove electrode silicon detector |
| CN110993703A (en) * | 2019-11-27 | 2020-04-10 | 中国科学院金属研究所 | GaN/MoS2Two-dimensional van der Waals heterojunction photoelectric detector and preparation method thereof |
| CN111987226A (en) * | 2020-08-21 | 2020-11-24 | 深圳大学 | Photoelectric detector and preparation method thereof |
| CN112582542A (en) * | 2020-12-06 | 2021-03-30 | 南开大学 | Monomolecular field effect transistor based on two-dimensional van der Waals heterostructure and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| Electronic and transport properties of GaAs/InSe van der Waals heterostructure;Y.H. Xu等;Applied SurfaceScience;第547卷;第3页右栏第2段、第9页左栏第2段、结论部分第1段 * |
| InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器;陈洪宇等;发光学报;20191130;第40卷(第11期);1409-1416 * |
| Y.H. Xu等.Electronic and transport properties of GaAs/InSe van der Waals heterostructure.Applied SurfaceScience.2021,第547卷第3页右栏第2段、第9页左栏第2段、结论部分第1段. * |
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