CN114737254B - Silicon carbide epitaxial growth device and growth process method - Google Patents
Silicon carbide epitaxial growth device and growth process method Download PDFInfo
- Publication number
- CN114737254B CN114737254B CN202210648825.9A CN202210648825A CN114737254B CN 114737254 B CN114737254 B CN 114737254B CN 202210648825 A CN202210648825 A CN 202210648825A CN 114737254 B CN114737254 B CN 114737254B
- Authority
- CN
- China
- Prior art keywords
- source gas
- tray
- substrate
- groove
- edge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000012010 growth Effects 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 33
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 75
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 53
- 239000010439 graphite Substances 0.000 claims abstract description 53
- 230000000994 depressogenic effect Effects 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 99
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 238000005507 spraying Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000005192 partition Methods 0.000 description 6
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 5
- 239000005977 Ethylene Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 4
- 239000005052 trichlorosilane Substances 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 230000003698 anagen phase Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application discloses a silicon carbide epitaxial growth device and a growth process method. The growing device comprises: reaction module and rotatory tray subassembly are equipped with the reaction chamber in the reaction module, and rotatory tray subassembly disposes in the bottom in reaction chamber, and rotatory tray subassembly includes: graphite tray and rotation support portion, be equipped with the depressed part that is used for placing the substrate on the graphite tray, be equipped with annular first recess in the depressed part, first recess is configured as the projection of the edge of substrate on the graphite tray and falls on in first recess, be equipped with a plurality of edge C source gas flow paths on the graphite tray, a plurality of edge C source gas flow paths are arranged along the circumference of first recess, and communicate first recess and rotation support portion's inner chamber, a plurality of edge C source gas flow paths will pour into the C source gas guide to first recess to the inner chamber of rotation support portion, C source gas guides the edge side to the substrate through first recess. The method has the advantages of improving the content of C on the edge side of the substrate, inhibiting the doping efficiency of N on the edge and realizing the purpose of uniform doping concentration.
Description
Technical Field
The application relates to the field of semiconductor equipment, in particular to a silicon carbide epitaxial growth device and a growth process method.
Background
During the epitaxial growth of silicon carbide (SiC), a substrate is placed on a graphite tray in a reaction cavity of a growth device in advance, the reaction cavity is heated by a heater, reaction gas containing C element and Si element is introduced into the reaction cavity under proper conditions, and the SiC single crystal film is grown on the substrate. The graphite tray is used for carrying the substrate to carry out silicon carbide epitaxial growth, which is a current general method and has no alternative scheme. The silicon carbide epitaxial growth process has higher requirements on thickness and doping uniformity, and relatively, the thickness uniformity is easy to control in the process, but the doping concentration is difficult to control. The uniformity of the doping concentration of the silicon carbide epitaxial wafer obtained under the current process conditions can only reach 3-5%, and the silicon carbide epitaxial wafer is unstable and difficult to meet the requirements for manufacturing high-quality MOSFET power devices.
Disclosure of Invention
To overcome the above disadvantages, the present application aims to: the silicon carbide epitaxial growth device is provided, and the grown silicon carbide epitaxial wafer has good doping concentration uniformity.
In order to achieve the purpose, the following technical scheme is adopted in the application:
an apparatus for epitaxial growth of silicon carbide, comprising:
a reaction module and a rotary tray component,
a reaction cavity is arranged in the reaction module,
the rotary tray component is arranged at the bottom of the reaction chamber and comprises: a graphite tray and a rotary supporting part,
the graphite tray is provided with a depressed part for placing a substrate, an annular first groove is arranged in the depressed part, the first groove is configured that the projection of the edge of the substrate on the graphite tray falls in the first groove,
the graphite tray is provided with a plurality of edge C source gas flow paths, the edge C source gas flow paths are distributed along the circumferential direction of the first groove and communicate the first groove with the inner cavity of the rotary supporting part, the edge C source gas flow paths guide the C source gas injected into the inner cavity of the rotary supporting part to the first groove, and the C source gas is guided to the edge side of the substrate through the first groove. Through the design, the C source gas is guided to the edge side of the substrate, an annular region with relatively high C concentration is formed on the edge side of the substrate, the doping efficiency of N on the edge side of the substrate is inhibited, the edge effect is reduced, and the aim of uniform doping concentration is fulfilled. In this embodiment, the first groove has a gas uniformizing function of uniformly diffusing the introduced C source gas.
In a preferred embodiment, the graphite tray comprises: a cover plate and a disk-shaped tray body, the cover plate and the tray body are combined to form a concave part for placing a substrate,
the cover plate has: a ring-shaped body, one side of the ring-shaped body is provided with a positioning groove,
one side of the tray body is sequentially provided with: a first annular protrusion, a second annular protrusion and a positioning convex ring, wherein a first groove is arranged between the first protrusion and the second protrusion, a second groove is arranged between the second protrusion and the positioning convex ring,
the positioning convex ring is matched with the positioning groove, so that the cover plate is arranged on the tray body. Through the design, the graphite tray is designed into a split type, and the maintenance cost of the graphite tray can be reduced.
In a preferred embodiment, the second protrusion is provided with a plurality of third air inlet channels arranged along the radial direction of the tray body, and the third air inlet channels communicate the first groove and the second groove.
In a preferred embodiment, the third inlet passage is circular in cross-section and has a diameter of between 0.1 and 0.3 mm.
In a preferred embodiment, the number of the third air intake passages is between 10 and 30.
In a preferred embodiment, the third air intake passages are uniformly arranged in the circumferential direction of the second protruding portion.
In a preferred embodiment, the tray body corresponding to the second groove is provided with a plurality of second air inlet channels axially arranged along the tray body, and the second air inlet channels communicate the second groove with the inner cavity of the rotary support part.
In a preferred embodiment, the rotation support includes:
a rotary supporting cylinder, which is provided with an inner cavity inside, wherein the inner wall of one side of the rotary supporting cylinder is provided with an annular clapboard which is arranged along the radial direction of the rotary supporting cylinder, the clapboard is provided with a plurality of first air inlet channels which are arranged along the axial direction of the rotary supporting cylinder, the first air inlet channels communicate the source gas flow path of the edge C with the inner cavity,
and a protruding end which is arranged along the axial direction of the rotary supporting cylinder and protrudes out of the rotary supporting cylinder is arranged on one side of the partition board, which is far away from the rotary supporting cylinder, and the protruding end is used for connecting the graphite tray.
In a preferred embodiment, the side of the rotation support part far from the graphite tray is connected with a driving part, a pipeline is arranged in the driving part, one side of the pipeline extends to the inner cavity of the rotation support part, and the other side of the pipeline is connected with a source gas supply part C.
The embodiment of the present application provides a growth process method using the above silicon carbide epitaxial growth apparatus, and the silicon carbide epitaxial growth apparatus further includes: the growth process method comprises the following steps of:
s1, adjusting the pressure of a reaction cavity to a preset value, heating a graphite tray and a substrate to a first preset temperature based on a heating device, introducing hydrogen into the reaction cavity based on a spraying assembly, and continuing for a first preset time to etch and clean the surface of the substrate;
s2, introducing growth gas and nitrogen into the reaction cavity based on the spraying assembly, injecting a C source gas into the inner cavity of the rotary supporting part based on the C source gas supply part, and guiding the C source gas to the edge side of the substrate through the edge C source gas flow path so as to grow an N-type doped buffer layer on the substrate;
s3, introducing growth gas into the reaction cavity based on the spraying assembly, adjusting the flow of introduced nitrogen, and simultaneously matching and adjusting the flow of the injected C source gas to grow an N-type doped epitaxial layer on the N-type doped buffer layer;
and S4, finishing the growth. The uniformity of the N-type doping concentration of the epitaxial wafer obtained by the method reaches 1.5-2%. The epitaxial wafer is used for manufacturing a high-quality MOSFET power device, and can ensure the consistency and high yield of the power device so as to reduce the production cost of the power device.
Advantageous effects
According to the silicon carbide epitaxial growth device, the graphite tray is provided with the plurality of edge C source gas flow paths, the C source gas injected into the inner cavity of the rotary supporting part is guided to the edge side of the substrate during N-type doping, and the area with relatively high C concentration is formed on the edge side of the substrate, so that the doping efficiency of the edge side N of the substrate is inhibited, the edge effect is reduced, and the purpose of uniform doping concentration is achieved. An annular first groove is arranged in a concave part of the graphite tray for placing the substrate, and the projection of the edge of the substrate on the graphite tray falls in the first groove, so that the C source gas is guided to the first groove, is uniformly dispersed through the first groove and is guided to the edge side of the substrate, an annular region with relatively high C concentration is formed on the edge side of the substrate, the doping efficiency of N on the edge side of the substrate is inhibited, and the purpose of uniform doping concentration is realized.
Drawings
The accompanying drawings are included to provide an understanding of the disclosed embodiments and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the examples serve to explain the principles of the disclosure and not to limit the disclosure. The shapes and sizes of the various elements in the drawings are not to scale and are merely illustrative of the present application.
Fig. 1 is a schematic cross-sectional view of a silicon carbide epitaxial growth apparatus according to an embodiment of the present application;
FIG. 2 is an enlarged view of a portion of FIG. 1 at a;
FIG. 3 is an enlarged view of a portion of FIG. 2 at b;
FIG. 4 is a schematic view of a substrate placed on a rotating tray assembly according to an embodiment of the present application;
FIG. 5 is a schematic front view of FIG. 4;
FIG. 6 is a schematic cross-sectional view taken at A-A of FIG. 5;
fig. 7 is an exploded view of fig. 6.
Detailed Description
The above-described scheme is further illustrated below with reference to specific examples. It should be understood that these examples are for illustrative purposes and are not intended to limit the scope of the present application. The conditions employed in the examples may be further adjusted as determined by the particular manufacturer, and the conditions not specified are generally those used in routine experimentation.
The application provides a silicon carbide epitaxial growth device and a growth process method. The silicon carbide epitaxial growth apparatus (hereinafter referred to as growth apparatus) includes: reaction module and rotatory tray subassembly are equipped with the reaction chamber in the reaction module, and rotatory tray subassembly disposes in the bottom in reaction chamber, and rotatory tray subassembly includes: the graphite tray is provided with a recess for placing a substrate, an annular first groove is formed in the recess, the first groove is configured to enable the projection of the edge of the substrate on the graphite tray to fall into the first groove, the graphite tray is provided with a plurality of edge C source gas flow paths, the edge C source gas flow paths are distributed along the circumferential direction of the first groove and communicate the first groove with the inner cavity of the rotary supporting part, the edge C source gas flow paths guide the C source gas injected into the inner cavity of the rotary supporting part to the first groove, and the C source gas is guided to the edge side of the substrate through the first groove. This forms a region with a relatively high C concentration at the edge of the substrate (increasing the carbon-to-silicon ratio at the edge), suppressing the doping efficiency of N at the edge of the substrate. The uniformity of doping concentration of the epitaxial wafer obtained by the growth device reaches 1.5-2%, and the requirements of MOSFET power devices are met (the uniformity index of doping required by the existing high-quality MOSFET power devices is within 2%, and the consistency and high yield of products can be guaranteed).
In the mechanism of the embodiment of the present application, the graphite tray itself has a porous material, and part of nitrogen (N) gas is adsorbed 2 ). During epitaxial growth, nitrogen in the graphite tray is decomposed and volatilized from the surface at high temperature, and is diffused to the surface of the substrate, and the edge area of the substrate is closest to the surface of the tray, so that the influence is large. During N-type doping, the doping gas N is increased equivalently 2 Corresponding to an increase in N of the edge region 2 Resulting in more doped/infiltrated N elements.
To this end, the applicant provided a marginal C source gas flow path for supplying a C source gas (C source gas) supplied from a C source gas supply part at the time of N-type dopant epitaxial growth by structurally modifying a graphite tray 2 H 4 Or C 3 H 8 ) Leading to the edge side of the substrate to increase the content of C at the edge of the substrateThe influence from the residual N in the graphite tray is offset (the carbon-silicon ratio (C/Si)) to reduce the doping efficiency of the edge N. The method well solves the problem of uneven doping caused by the edge effect in the epitaxial growth process of the silicon carbide. The edge effect means that the concentration of N in a local range of the edge side of the substrate (in a local range extending 5-8mm from the outermost side to the inner side (circle center side)) is 1-2% higher than that in other areas in the substrate.
Next, a silicon carbide epitaxial growth apparatus (hereinafter referred to as a growth apparatus) proposed in the present application will be described with reference to the drawings.
Fig. 1 is a schematic cross-sectional view of a growth apparatus according to an embodiment of the present application.
The growing apparatus includes: a reaction module 100 and a rotating tray assembly.
A reaction chamber 100a is disposed in the reaction module 100, a spray assembly 110 is disposed at the top of the reaction module 100, and the spray assembly 110 is used for injecting gas (e.g., reaction gas, dopant gas, carrier gas, or shielding gas) into the reaction chamber 100 a.
The rotating tray assembly is disposed at the bottom of the reaction chamber 100 a.
The rotating tray assembly includes:
a rotary support 120 and a graphite tray 130, the graphite tray 130 is disposed at one side end of the rotary support 120, the graphite tray 130 faces the spray assembly 110, the graphite tray is provided with a recess 130a for placing the substrate 200, the recess is provided with a ring-shaped first groove, the first groove is configured such that the projection of the edge of the substrate on the graphite tray falls in the first groove,
the graphite tray is provided with a peripheral C source gas flow path which communicates the first groove in the recess 130a with the inner cavity of the rotation support part 120. The side of the rotation support 120 away from the graphite tray 130 is connected to a driving member 140, and a pipe 150 is disposed in the driving member 140, wherein one side of the pipe 150 extends to the inner cavity of the rotation support, and the other side is connected (or connected via an extension pipe) to a source gas supply part C (not shown). The C source gas supply part is used for supplying C source gas (e.g. C) 2 H 4 Or C 3 H 8 ). In the present embodiment, the driving member is disposed in a hollow state, and the pipe is disposed in the driving member. During the N-type doping epitaxial growth, the substrate is placed on the graphite tray, the driving component drives the rotating tray component to rotate so as to drive the graphite tray and the substrate to rotate, and the reaction gas (such as ethylene (C) is injected into the reaction cavity by the spraying component 2 H 4 ) And trichlorosilane (SiHCL) 3 ) Or propane (C) 3 H 8 ) And Silane (SiH) 4 ) And a nitrogen dopant gas, a C source gas is injected by a C source gas supply portion, and the C source gas is guided to the edge side of the substrate through an edge C source gas flow path. Thus, a region having a relatively high C concentration is formed on the edge side of the substrate, and the doping efficiency of N on the edge side of the substrate is suppressed. In this embodiment, a heating device (not shown) is disposed in the cavity of the rotation support portion, and the graphite tray and the substrate are heated by the heating device. The graphite tray can be of an integrated structure or a split structure (such as formed by combining a tray body and a cover plate).
The rotating tray assembly is described next in connection with fig. 2-7 and with reference to fig. 1. FIG. 2 is an enlarged view of a portion of FIG. 1 at a; fig. 3 is a partially enlarged view of b in fig. 2.
The rotating tray assembly includes: a rotation support 120 and a graphite tray 130. The rotation support part is coaxially arranged with the graphite tray.
The rotation support 120 includes:
the rotary support cylinder 121 has an inner cavity 121a (also referred to as an inner cavity of the rotary support part) therein, an annular partition plate 122 disposed along a radial direction of the rotary support cylinder 121 is disposed on an inner wall of one side of the rotary support cylinder 121, and a protruding end 122a is disposed on a side of the partition plate 122 away from the rotary support cylinder 121, the protruding end 122a extending outward in an axial direction of the rotary support cylinder and protruding from the rotary support cylinder. The protruding end 122a is ring-shaped. The partition plate 122 is provided with a plurality of first air intake passages 122b arranged in the axial direction of the rotary support cylinder. The combination of the end portion 121b of the rotation support cylinder 121, the partition plate 122 and the protruding end 122a constitutes an annular groove.
The graphite tray includes:
a tray body 131 and a cover plate 132,
the cover 132 is disposed on the tray body 131, and the cover 132 is annular. An annular positioning groove 132a is disposed on one side of the cover plate 132.
A first projection 131a, a second projection 131b and a positioning convex ring 131c are arranged at one side (radial direction) of the tray body 131 from inside to outside,
a first groove 133 is formed between the first protrusion 131a and the second protrusion 131b,
the second protrusion 131b and the positioning convex ring 131c have a second groove 134 therebetween.
The positioning convex ring 131c is used to match with the positioning groove 132a of the cover plate 132, so that the cover plate 132 is mounted on the tray body 131. The cover plate 132 and the tray body 131 are combined to form a recess for placing a substrate. When the substrate is placed on the tray body, the projection of the edge of the substrate on the tray body falls in the first groove (namely, after the substrate is placed in the concave part, the substrate does not completely cover the first groove, and a gap is reserved on the first groove, so that the C source gas guided to the first groove flows out from the gap through uniform gas, and an annular area with relatively high C concentration is formed on the edge side of the substrate). In this embodiment, the tray body has a disk shape, and the first protrusion, the second protrusion, and the positioning protruding ring have ring shapes.
The second protruding portion 131b is provided with a plurality of third intake passages 131b 1. The third air inlet passage 131b1 is disposed in the radial direction of the tray body and communicates the first recess 133 with the second recess 134. The third air intake passage 131b1 is for uniforming air. Preferably, the third air inlet channel is cylindrical, the aperture/diameter of the third air inlet channel is 0.1-0.3mm, and the number of the third air inlet channels is 10-30. Preferably, the third air intake passages are uniformly arranged in the circumferential direction of the second protruding portion.
The first recess 133 (also referred to as a gas uniformizing groove) is for uniformizing the C source gas outputted from the third gas inlet passage 131b1, which is dispersed and guided to the edge side of the substrate, to form an annular region having a relatively high C concentration at the edge side of the substrate. The depth of the first groove 133 is between 0.3 and 1 mm.
A plurality of second air inlet passages 131d are disposed on the tray body 131 corresponding to the second grooves 134, and the second air inlet passages 131d are disposed along the axial direction of the tray body 131. The second intake passage 131d communicates with the second recess 134. The second air intake passage is cylindrical.
A recess 131e is disposed in the middle of the tray body 131 on the side opposite to the first protrusion, the recess 131e is used for matching with the protrusion end 122a of the rotary supporting cylinder 121, and the tray body 131 is fixed on the rotary supporting cylinder 121. At this time, the second air intake passage 131d communicates the second groove 134 with the annular groove on the rotary support cylinder. The annular groove is communicated with the inner cavity of the rotary supporting cylinder through a first air inlet channel on the partition plate of the rotary supporting cylinder. The third air inlet passage 131b1, the second groove 134 and the second air inlet passage 131d combine to form a peripheral C source gas flow path that communicates the first groove with the annular groove, which communicates with the first air inlet passage 122b, which in turn communicates with the first air inlet passage. During the N-type doping epitaxial growth, the C source gas supplied by the C source gas supply part is injected into the inner cavity of the rotary supporting cylinder (the inner cavity of the rotary supporting part), is guided to the first groove through the first gas inlet channel, the annular groove and the edge C source gas flow path, is uniformly distributed through the first groove and is guided to the edge side of the substrate. In one embodiment, the annular groove may be omitted, the first gas inlet passage communicates with the second gas inlet passage, and the C source gas is introduced into the first groove through the first gas inlet passage and the edge C source gas flow path, and is uniformly distributed through the first groove and then introduced to the edge side of the substrate. Therefore, the carbon-silicon ratio (C/Si ratio) of the edge side is improved, the doping efficiency of the edge N of the substrate is reduced, and the purpose of improving the doping concentration uniformity of the epitaxial wafer is achieved.
Next, a growth process method of performing epitaxial growth using the above growth apparatus is described, the growth process method including the steps of:
s1, adjusting the pressure of the reaction cavity to a preset value, heating the graphite tray and the substrate to a first preset temperature based on the heating device, introducing hydrogen into the reaction cavity based on the spraying assembly, and continuing for a first preset time so as to etch and clean the surface of the substrate. In one embodiment, the step S1 includes: adjusting the pressure of the reaction chamber to a preset value (such as 300 mbar), heating the graphite tray and the substrate to 1550-.
S2, introducing growth gas and doping gas (nitrogen) into the reaction cavity based on the spraying assembly, gradually increasing the flow of the growth gas, injecting C source gas into the inner cavity of the rotary supporting part based on the C source gas supply part, and guiding the C source gas to the edge side of the substrate (forming an annular region with relatively high C concentration on the edge side of the substrate) through the edge C source gas flow path so as to grow an N-type doping buffer layer on the substrate;
s3, introducing growth gas into the reaction cavity based on the spraying assembly, adjusting the flow of introduced doping gas nitrogen, and meanwhile, matching and adjusting the flow of the injected C source gas to grow an N-type doping epitaxial layer on the N-type doping buffer layer;
and S4, finishing the growth. The S4 includes: and stopping introducing all growth gas, doping gas and C source gas, cooling and finishing the growth. In this embodiment, the growth gas is trichlorosilane (SiHCl) 3 ) And ethylene (C) 2 H 4 ) A combination of (2) and (C), may also be propane (C) 3 H 8 ) And Silane (SiH) 4 ) Combinations of (a) and (b). The C source gas is ethylene (C) 2 H 4 ) Or propane (C) 3 H 8 ). The uniformity of the doping concentration of the epitaxial wafer obtained by the growth process method reaches 1.5-2%, the requirement of a high-quality MOSFET power device is met, and the cost of the power device can be reduced. Preferably, the C source gas is not introduced into the newly replaced tray during the initial growth phase (e.g., the first 10 epitaxial growths). As the usage time of the graphite tray increases (within the designed lifetime), the supply amount of the C source gas can be increased in a certain ratio to offset the influence from the residual N in the graphite tray.
In one embodiment, the step of S2 or S3 further comprises adjusting the amount of the C source gas to be injected to fine tune the doping concentration of N at the edge of the substrate. Preferably, a flow meter is disposed on a pipe connected to the C source gas supply part, and the flow meter is controlled to adjust the flow rate of the injected C source gas, thereby adjusting the amount of the injected C source gas.
The growth process described above was next verified using a 6 inch substrate as an example, and includes the following steps:
1) the pressure of the reaction chamber was adjusted to 300mbar, the graphite tray and the substrate were heated to 1610 ℃ based on the heating device, and hydrogen gas was introduced into the reaction chamber at 110slm (standard liter/min) based on the shower assembly for 6 minutes to perform hydrogen in-situ etching of the substrate.
2) Trichlorosilane (SiHCl) is introduced into the reaction cavity based on the spraying component 3 ) Flow rate 38sccm (standard ml/min), ethylene (C) 2 H 4 ) The flow rate of trichlorosilane is 130sccm, the flow rate of ethylene is 62sccm, the flow rate of nitrogen is 300sccm, and C is injected based on the C source gas supply part while the flow rates of doping gas and nitrogen are increased gradually within 3 minutes 2 H 4 The flow rate is 6 sccm; to grow an N-type doped buffer layer with the thickness of about 0.8 mu m,
3) continuously introducing growth gas into the reaction cavity based on the spraying assembly, gradually increasing the flow of the growth gas to 352sccm, reducing the flow of the doping gas to 11sccm, carrying out N-type doping epitaxial layer growth for 9 minutes, and injecting C in the time period of the N-type doping epitaxial layer growth 2 H 4 The flow rate of (2) was continuously linearly decreased from 6sccm to 2 sccm.
And (4) stopping introducing all growth gases and C source gases, cooling and finishing growth after the growth is finished. The N-type doped buffer layer and the N-type doped epitaxial layer are grown by the process method, the total time consumption is 12 minutes, and the N-type doped epitaxial layer with the thickness of about 12.5 mu m is obtained. Through actual measurement: the doping concentration of the obtained N-type doped buffer layer is 1.1E18, and the uniformity is 1.6%; the doping concentration of the N-type doping epitaxial layer is 6.9E15, the uniformity is 1.8%, and the requirement of a high-quality MOSFET power device is met.
In the present embodiment described above, the substrate may be selected from 4 inches, 6 inches, 8 inches, or 10 inches.
The above embodiments are merely illustrative of the technical concepts and features of the present application, and the purpose of the embodiments is to enable those skilled in the art to understand the content of the present application and implement the present application, and not to limit the protection scope of the present application. All equivalent changes and modifications made according to the spirit of the present application are intended to be covered by the scope of the present application.
Claims (8)
1. An apparatus for epitaxial growth of silicon carbide, comprising:
a reaction module and a rotary tray component,
a reaction cavity is arranged in the reaction module,
the rotary tray component is arranged at the bottom of the reaction chamber and comprises: a graphite tray and a rotary supporting part,
the graphite tray is provided with a depressed part for placing a substrate, an annular first groove is arranged in the depressed part, the first groove is configured that the projection of the edge of the substrate on the graphite tray falls in the first groove,
the graphite tray is provided with a plurality of edge C source gas flow paths which are arranged along the circumferential direction of the first groove and communicate the first groove with the inner cavity of the rotation support part, the plurality of edge C source gas flow paths guide the C source gas injected into the inner cavity of the rotation support part to the first groove, and the C source gas is guided to the edge side of the substrate through the first groove,
the rotation support portion includes:
a rotary supporting cylinder, which is provided with an inner cavity, the inner wall of one side of the rotary supporting cylinder is provided with an annular clapboard which is arranged along the radial direction of the rotary supporting cylinder, the clapboard is provided with a plurality of first air inlet channels which are arranged along the axial direction of the rotary supporting cylinder, the first air inlet channels communicate the source gas flow path of the edge C with the inner cavity,
and a projecting end which is arranged along the axial direction of the rotary supporting cylinder and is projected out of the rotary supporting cylinder is arranged on one side of the clapboard, which is far away from the rotary supporting cylinder, the projecting end is used for connecting the graphite tray,
the side, far away from the graphite tray, of the rotation supporting part is connected with a driving part, a pipeline is arranged in the driving part, one side of the pipeline extends to an inner cavity of the rotation supporting part, and the other side of the pipeline is connected with a source gas supply part C.
2. Silicon carbide epitaxial growth apparatus according to claim 1,
the graphite tray includes: a cover plate and a disk-shaped tray body, wherein the cover plate and the tray body are combined to form a concave part for placing a substrate,
the cover plate has: a ring-shaped body, one side of the ring-shaped body is provided with a positioning groove,
one side of tray body from inside to outside dispose in proper order: a first annular protruding part, a second protruding part and a positioning convex ring, wherein a first groove is arranged between the first protruding part and the second protruding part, a second groove is arranged between the second protruding part and the positioning convex ring,
the positioning convex ring is matched with the positioning groove, so that the cover plate is arranged on the tray body.
3. Silicon carbide epitaxial growth apparatus according to claim 2,
the second protruding portion is provided with a plurality of third air inlet channels which are arranged along the radial direction of the tray body, and the first grooves are communicated with the second grooves through the third air inlet channels.
4. Silicon carbide epitaxial growth apparatus according to claim 3,
the third air inlet channel is circular in cross section and has a diameter of 0.1-0.3 mm.
5. Silicon carbide epitaxial growth apparatus according to claim 3 or 4,
the number of the third air intake passages is 10 to 30.
6. Silicon carbide epitaxial growth apparatus according to claim 3 or 4,
the third air intake passages are evenly arranged in the circumferential direction of the second protruding portion.
7. Silicon carbide epitaxial growth apparatus according to claim 2,
and a plurality of second air inlet channels which are axially arranged along the tray body are arranged on the tray body corresponding to the second grooves, and the second grooves are communicated with the inner cavity of the rotary supporting part through the second air inlet channels.
8. A growth process using the silicon carbide epitaxial growth apparatus according to any one of claims 1 to 7,
the silicon carbide epitaxial growth apparatus further includes: a spraying component and a heating device, wherein the spraying component is arranged at the top of the reaction module, the heating device is arranged in the rotary tray component,
the growth process method is characterized by comprising the following steps:
s1, adjusting the pressure of a reaction cavity to a preset value, heating a graphite tray and a substrate to a first preset temperature based on a heating device, introducing hydrogen into the reaction cavity based on a spraying assembly, and continuing for a first preset time to etch and clean the surface of the substrate;
s2, introducing growth gas and nitrogen into the reaction cavity based on the spraying assembly, injecting a C source gas into the inner cavity of the rotary supporting part based on the C source gas supply part, and guiding the C source gas to the edge side of the substrate through the edge C source gas flow path so as to grow an N-type doped buffer layer on the substrate;
s3, introducing growth gas into the reaction cavity based on the spraying assembly, adjusting the flow of introduced nitrogen, and simultaneously matching and adjusting the flow of the injected C source gas to grow an N-type doped epitaxial layer on the N-type doped buffer layer;
and S4, finishing the growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210648825.9A CN114737254B (en) | 2022-06-09 | 2022-06-09 | Silicon carbide epitaxial growth device and growth process method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210648825.9A CN114737254B (en) | 2022-06-09 | 2022-06-09 | Silicon carbide epitaxial growth device and growth process method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114737254A CN114737254A (en) | 2022-07-12 |
| CN114737254B true CN114737254B (en) | 2022-08-23 |
Family
ID=82287774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210648825.9A Active CN114737254B (en) | 2022-06-09 | 2022-06-09 | Silicon carbide epitaxial growth device and growth process method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114737254B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114892147B (en) * | 2022-07-13 | 2022-10-25 | 芯三代半导体科技(苏州)有限公司 | Method for repairing graphite component of silicon carbide deposition equipment |
| CN115216843B (en) * | 2022-07-14 | 2023-07-07 | 深圳市纳设智能装备有限公司 | Graphite tray state detection method, device and system and terminal equipment |
| CN117448955B (en) * | 2023-12-21 | 2024-03-29 | 南京百识电子科技有限公司 | Preparation method of silicon carbide epitaxial structure |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6083560A (en) * | 1995-11-16 | 2000-07-04 | Alliant Techsystems Inc | Process for controlled deposition profile forced flow chemical vapor infiltration |
| DE10133914A1 (en) * | 2001-07-12 | 2003-01-23 | Aixtron Ag | Apparatus to deposit crystalline layers on semiconductor wafers comprises rotating wafer holders mounted on rotating mounting forming floor of process chamber whose roof contains central gas inlet |
| US8052794B2 (en) * | 2005-09-12 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Directed reagents to improve material uniformity |
| CN202090100U (en) * | 2011-05-23 | 2011-12-28 | 东莞市天域半导体科技有限公司 | Tray device in planetary type epitaxial growth equipment |
| ITCO20130041A1 (en) * | 2013-09-27 | 2015-03-28 | Lpe Spa | SUSCECTOR WITH SUPPORT ELEMENT |
| CN103614779B (en) * | 2013-11-28 | 2016-03-16 | 中国电子科技集团公司第五十五研究所 | A kind of method improving N-shaped doping content homogeneity in silicon carbide epitaxy blade |
| JP6382629B2 (en) * | 2014-08-07 | 2018-08-29 | 大陽日酸株式会社 | Vapor growth equipment |
| JP6791348B2 (en) * | 2019-12-24 | 2020-11-25 | 住友電気工業株式会社 | Method for manufacturing silicon carbide epitaxial substrate and silicon carbide semiconductor device |
| CN213925129U (en) * | 2020-11-26 | 2021-08-10 | 瀚天天成电子科技（厦门）有限公司 | Epitaxial thin film growth bearing disc |
| CN214313127U (en) * | 2020-12-30 | 2021-09-28 | 中微半导体设备(上海)股份有限公司 | Film growth system, substrate tray and carrier ring assembly |
| CN114150381B (en) * | 2021-11-15 | 2023-10-31 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device |
| CN114059164B (en) * | 2022-01-06 | 2022-11-04 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device |
| CN216688314U (en) * | 2022-02-09 | 2022-06-07 | 材料科学姑苏实验室 | Wafer bearing device of chemical vapor deposition equipment |
-
2022
- 2022-06-09 CN CN202210648825.9A patent/CN114737254B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN114737254A (en) | 2022-07-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114737254B (en) | Silicon carbide epitaxial growth device and growth process method | |
| US6383954B1 (en) | Process gas distribution for forming stable fluorine-doped silicate glass and other films | |
| US6814811B2 (en) | Semiconductor wafer and vapor phase growth apparatus | |
| US3696779A (en) | Vapor growth device | |
| US7381275B2 (en) | Apparatus and method for manufacturing semiconductor | |
| JP5444607B2 (en) | Epitaxial film forming apparatus susceptor, epitaxial film forming apparatus, and epitaxial wafer manufacturing method | |
| CN106011795B (en) | Chamber assembly for epitaxial growth apparatus | |
| KR101077324B1 (en) | Methods for producing epitaxially coated silicon wafers | |
| US20070026148A1 (en) | Vapor phase deposition apparatus and vapor phase deposition method | |
| WO2011087698A2 (en) | Pecvd multi-step processing with continuous plasma | |
| KR20040066093A (en) | Susceptor for epitaxial growth and epitaxial growth method | |
| WO2002093627A1 (en) | Doped silicon deposition process in resistively heated single wafer chamber | |
| JP6009237B2 (en) | Epitaxial silicon wafer manufacturing method and epitaxial silicon wafer | |
| KR100680122B1 (en) | Semiconductor wafer and its manufacturing method | |
| WO2019044440A1 (en) | Vapor-phase growth device and vapor-phase growth method | |
| JP5087238B2 (en) | Semiconductor manufacturing apparatus maintenance method and semiconductor manufacturing method | |
| US6887775B2 (en) | Process and apparatus for epitaxially coating a semiconductor wafer and epitaxially coated semiconductor wafer | |
| US6099650A (en) | Structure and method for reducing slip in semiconductor wafers | |
| KR101238162B1 (en) | Metal organic chemical vapor deposition apparatus | |
| US20240191393A1 (en) | Epitaxy susceptor, epitaxy growth apparatus and manufacturing method of semiconductor device | |
| KR100794719B1 (en) | Susceptor for chemical vapor-phase deposition apparatus | |
| KR101312544B1 (en) | Epitaxial Reactor | |
| KR20240115127A (en) | Epitaxial Wafer Manufacturing Method | |
| CN118256896A (en) | Gas supply device and vapor phase growth device | |
| KR20130134937A (en) | Silicon carbide epi wafer and method of fabricating the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 215000 building s, 104 Sumu Road, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Patentee after: Xin San Dai Semiconductor Technology (Suzhou) Co.,Ltd. Country or region after: China Address before: 215000 building s, 104 Sumu Road, Suzhou Industrial Park, Suzhou area, China (Jiangsu) pilot Free Trade Zone, Suzhou City, Jiangsu Province Patentee before: Core semiconductor technology (Suzhou) Co.,Ltd. Country or region before: China |