CN114715836B - Composite functional MEMS device structure and manufacturing method thereof - Google Patents
Composite functional MEMS device structure and manufacturing method thereof Download PDFInfo
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- CN114715836B CN114715836B CN202210390856.9A CN202210390856A CN114715836B CN 114715836 B CN114715836 B CN 114715836B CN 202210390856 A CN202210390856 A CN 202210390856A CN 114715836 B CN114715836 B CN 114715836B
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- pressure sensitive
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- 239000002131 composite material Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000003990 capacitor Substances 0.000 claims abstract description 35
- 238000002955 isolation Methods 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
The invention discloses a composite function MEMS device structure, which comprises an MEMS capacitor and an MEMS electrostatic voice pressure sensitive film device, wherein the MEMS capacitor and the MEMS electrostatic voice pressure sensitive film device are integrally prepared on the same substrate. The device comprises a substrate, an isolation layer, a lower back electrode, a first gap layer, a vibrating diaphragm, a second gap layer and an upper back electrode which are sequentially laminated from bottom to top; the MEMS capacitor and the MEMS electrostatic voice pressure sensitive film device are divided into a left part and a right part; through holes are correspondingly formed in the middle of the substrate, the isolation layer, the first gap layer, the second gap layer and the upper back electrode of the MEMS capacitor part; the middle part of the lower back electrode and the upper back electrode is provided with an acoustic hole; and through holes are correspondingly formed in the middle parts of the substrate, the isolation layer, the lower back electrode, the first gap layer and the second gap layer of the MEMS electrostatic voice pressure sensitive film device part. The MEMS capacitor and the MEMS electrostatic voice pressure sensitive film device are integrated and prepared on the same substrate by utilizing MEMS micro-electromechanical processing technology. The packaging space is saved, and the purchasing cost is reduced.
Description
Technical Field
The invention relates to an MEMS device, in particular to a composite function MEMS device structure and a manufacturing method thereof.
Background
The principle of the MEMS electrostatic voice pressure sensitive membrane device is that the vibrating diaphragm is driven to vibrate and sound by means of an audio signal and a control signal; the principle of MEMS capacitors uses a movable membrane (diaphragm) to pick up changes in pressure, which is converted into an electrical signal.
Current consumer electronics terminals, capacitors and voice pressure sensitive membrane devices take up much space as two distinct units, especially voice pressure sensitive membrane devices or bulky conventional membrane devices, which have hampered the trend towards ever-smaller designs. The known solutions for cost reduction and space reduction are each miniaturized, and still two different device layouts are individually on the PCB board.
If the mature MEMS capacitor and the emerging MEMS voice pressure sensitive film device can be integrated and prepared on the same die, the space of the consumer electronic terminal with the size of gold can be saved, and the cost is reduced.
Disclosure of Invention
The invention aims at: the MEMS capacitor and the MEMS electrostatic voice pressure sensitive film device are integrally manufactured on the same substrate by utilizing the MEMS micro-electromechanical processing technology, so that the packaging space is saved, and the cost of independently purchasing the MEMS sensor is reduced.
The technical scheme of the invention is as follows:
a composite functional MEMS device structure comprises an MEMS capacitor and an MEMS electrostatic voice pressure sensitive film device which are integrally prepared on the same substrate.
Preferably, the device comprises a substrate, an isolation layer, a lower back electrode, a first gap layer, a vibrating diaphragm, a second gap layer and an upper back electrode which are sequentially laminated from bottom to top;
the MEMS capacitor and the MEMS electrostatic voice pressure sensitive film device are divided into a left part and a right part;
Through holes are correspondingly formed in the middle of the substrate, the isolation layer, the first gap layer, the second gap layer and the upper back electrode of the MEMS capacitor part; the middle part of the lower back electrode and the upper back electrode is provided with an acoustic hole;
And through holes are correspondingly formed in the middle parts of the substrate, the isolation layer, the lower back electrode, the first gap layer and the second gap layer of the MEMS electrostatic voice pressure sensitive film device part.
Preferably, the substrate is a silicon substrate.
A manufacturing method of a composite function MEMS device structure comprises the following steps:
s1, operating an isolation layer on the upper surface of a substrate;
S2, depositing a lower back electrode on the isolation layer;
s3, etching the lower back electrode to form an acoustic hole; wherein the acoustic holes of the MEMS capacitor portion are plural; the sound hole of the MEMS electrostatic voice pressure sensitive film device part is one;
S4, depositing a first gap layer on the lower back;
S5, depositing a vibrating diaphragm on the first gap layer;
s6, depositing a second gap layer on the vibrating diaphragm;
S7, depositing an upper back electrode on the second gap layer;
S8, etching the upper back electrode of the MEMS capacitor part to form a plurality of sound holes;
S9, deep silicon etching is carried out on the back of the substrate to form back cavities of the two devices, and silicon is used as a partition in the middle of the back;
And S10, performing release treatment on the first gap layer and the second gap layer to form gaps, and correspondingly forming the MEMS capacitor device and the MEMS voice pressure sensitive film device.
Preferably, the isolating layer is provided with a through hole corresponding to the back cavity.
Preferably, the diaphragm is partitioned between the MEMS capacitor and the MEMS electrostatic voice pressure sensitive membrane device.
The invention has the advantages that:
The invention relates to a composite function MEMS device structure and a manufacturing method thereof, wherein an MEMS capacitor and an MEMS electrostatic voice pressure sensitive film device are integrated and manufactured on a substrate by utilizing an MEMS micro-electromechanical processing technology. The packaging space is saved, and the cost of independent purchase of the MEMS sensor is reduced.
Drawings
The invention is further described below with reference to the accompanying drawings and examples:
FIG. 1 is a schematic diagram of a composite function MEMS device structure of the present invention;
FIG. 2 illustrates the operation of an isolation layer on the upper surface of a substrate;
FIG. 3 is a deposition of a lower back electrode on an isolation layer;
FIG. 4 illustrates the formation of an acoustic port in the lower back electrode;
FIG. 5 is a first gap layer deposited on the lower back side;
FIG. 6 is a schematic illustration of a diaphragm deposited over a first gap layer;
FIG. 7 is a schematic illustration of depositing a second gap layer over a diaphragm;
FIG. 8 is a deposition of an upper back electrode on the second gap layer;
FIG. 9 is an upper back electrode etched acoustic port;
fig. 10 is a deep silicon etch of the back side of the substrate.
Detailed Description
As shown in FIG. 1, the composite functional MEMS device structure of the invention comprises an MEMS capacitor and an MEMS electrostatic voice pressure sensitive film device, which are integrally prepared on the same substrate 1. The MEMS capacitor and the MEMS electrostatic voice pressure sensitive film device are divided into a left part and a right part.
Specifically, the MEMS device structure comprises a substrate 1, an isolation layer 2, a lower back electrode 3, a first gap layer 4, a vibrating diaphragm 5, a second gap layer 6 and an upper back electrode 7 which are sequentially laminated from bottom to top;
Through holes are correspondingly formed in the middle of the substrate 1, the isolation layer 2, the first gap layer 4, the second gap layer 6 and the upper back electrode 7 of the MEMS capacitor part; the middle parts of the lower back electrode 3 and the upper back electrode 7 are provided with a plurality of sound holes corresponding to the positions;
And through holes are correspondingly formed in the middle parts of the substrate 1, the isolation layer 2, the lower back electrode 3, the first gap layer 4 and the second gap layer 6 of the MEMS electrostatic voice pressure sensitive film device part, and the through holes of the lower back electrode 3 are acoustic holes of the sensitive film device.
The manufacturing method of the composite function MEMS device structure comprises the following steps:
s1, working an isolation layer 2 on the upper surface of a substrate 1 by adopting a silicon substrate, as shown in FIG. 2;
S2, depositing a lower back electrode 3 on the isolation layer 2, as shown in FIG. 3;
s3, etching the lower back electrode 3 to form an acoustic hole; wherein the acoustic holes of the MEMS capacitor portion are plural; the sound hole of the MEMS electrostatic voice pressure sensitive membrane device part is one, as shown in FIG. 4;
s4, depositing a first gap layer 4 on the lower back electrode 3, as shown in FIG. 5;
s5, a vibrating diaphragm 5 is deposited on the first gap layer 4, as shown in FIG. 6;
S6, depositing a second gap layer 6 on the diaphragm 5, as shown in FIG. 7;
s7, depositing an upper back electrode 7 on the second gap layer 6, as shown in FIG. 8;
S8, etching the upper back electrode 7 of the MEMS capacitor part to form a plurality of sound holes corresponding to the lower back electrode 3, as shown in FIG. 9;
s9, deep silicon etching is carried out on the back surface of the substrate to form back cavities of the two devices, and the middle of the back surface is partitioned by the silicon substrate, as shown in FIG. 10;
S10, performing release treatment on the first gap layer 4 and the second gap layer 6 to form gaps; and a through hole is arranged at the position of the isolation layer corresponding to the back cavity, and an MEMS capacitor device and an MEMS voice pressure sensitive film device are correspondingly formed, as shown in figure 1.
The diaphragm 5 is separated between the MEMS capacitor and the MEMS electrostatic voice pressure sensitive film device in the subsequent process.
The invention relates to a composite function MEMS device structure and a manufacturing method thereof, wherein an MEMS capacitor and an MEMS electrostatic voice pressure sensitive film device are integrated and manufactured on a substrate by utilizing an MEMS micro-electromechanical processing technology. The packaging space is saved, and the cost of independent purchase of the MEMS sensor is reduced.
The above embodiments are only for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the content of the present invention and implement the same according to the content of the present invention, and are not intended to limit the scope of the present invention. All modifications made according to the spirit of the main technical proposal of the invention should be covered in the protection scope of the invention.
Claims (5)
1. The composite functional MEMS device structure is characterized by comprising an MEMS capacitor and an MEMS electrostatic voice pressure sensitive film device which are integrally prepared on the same substrate;
the device comprises a substrate, an isolation layer, a lower back electrode, a first gap layer, a vibrating diaphragm, a second gap layer and an upper back electrode which are sequentially laminated from bottom to top;
the MEMS capacitor and the MEMS electrostatic voice pressure sensitive film device are divided into a left part and a right part;
Through holes are correspondingly formed in the middle of the substrate, the isolation layer, the first gap layer, the second gap layer and the upper back electrode of the MEMS capacitor part; the middle part of the lower back electrode and the upper back electrode is provided with an acoustic hole;
Through holes are correspondingly formed in the middle of the substrate, the isolation layer, the lower back electrode, the first gap layer and the second gap layer of the MEMS electrostatic voice pressure sensitive film device part;
The manufacturing method of the composite function MEMS device structure comprises the following steps:
s1, operating an isolation layer on the upper surface of a substrate;
S2, depositing a lower back electrode on the isolation layer;
s3, etching the lower back electrode to form an acoustic hole; wherein the acoustic holes of the MEMS capacitor portion are plural; the sound hole of the MEMS electrostatic voice pressure sensitive film device part is one;
S4, depositing a first gap layer on the lower back;
S5, depositing a vibrating diaphragm on the first gap layer;
s6, depositing a second gap layer on the vibrating diaphragm;
S7, depositing an upper back electrode on the second gap layer;
S8, etching the upper back electrode of the MEMS capacitor part to form a plurality of sound holes;
S9, deep silicon etching is carried out on the back of the substrate to form back cavities of the two devices, and silicon is used as a partition in the middle of the back;
And S10, processing the first gap layer and the second gap layer to form gaps, and correspondingly forming the MEMS capacitor device and the MEMS voice pressure sensitive film device.
2. The composite function MEMS device structure of claim 1, wherein the substrate is a silicon substrate.
3. The manufacturing method of the composite function MEMS device structure is characterized by comprising the following steps:
s1, operating an isolation layer on the upper surface of a substrate;
S2, depositing a lower back electrode on the isolation layer;
s3, etching the lower back electrode to form an acoustic hole; wherein the acoustic holes of the MEMS capacitor portion are plural; the sound hole of the MEMS electrostatic voice pressure sensitive film device part is one;
S4, depositing a first gap layer on the lower back;
S5, depositing a vibrating diaphragm on the first gap layer;
s6, depositing a second gap layer on the vibrating diaphragm;
S7, depositing an upper back electrode on the second gap layer;
S8, etching the upper back electrode of the MEMS capacitor part to form a plurality of sound holes;
S9, deep silicon etching is carried out on the back of the substrate to form back cavities of the two devices, and silicon is used as a partition in the middle of the back;
And S10, processing the first gap layer and the second gap layer to form gaps, and correspondingly forming the MEMS capacitor device and the MEMS voice pressure sensitive film device.
4. The method of fabricating a composite MEMS device structure as defined in claim 3, wherein the isolation layer has a through hole corresponding to the back cavity portion.
5. A method of fabricating a composite function MEMS device structure as defined in claim 3, wherein the diaphragm is partitioned between the MEMS capacitor and the MEMS electrostatic voice pressure sensitive membrane device.
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| CN202210390856.9A CN114715836B (en) | 2022-04-14 | 2022-04-14 | Composite functional MEMS device structure and manufacturing method thereof |
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| CN202210390856.9A CN114715836B (en) | 2022-04-14 | 2022-04-14 | Composite functional MEMS device structure and manufacturing method thereof |
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| CN114715836B true CN114715836B (en) | 2024-07-05 |
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| CN106535071A (en) * | 2016-11-21 | 2017-03-22 | 歌尔股份有限公司 | Integrated apparatus of MEMS microphone and environment sensor and manufacture method thereof |
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| CN104883652B (en) * | 2015-05-29 | 2019-04-12 | 歌尔股份有限公司 | MEMS microphone, pressure sensor integrated morphology and its manufacturing method |
| CN105307092B (en) * | 2015-12-04 | 2018-03-23 | 歌尔股份有限公司 | MEMS microphone, the integrated morphology of environmental sensor and manufacture method |
| CN108666412A (en) * | 2018-05-31 | 2018-10-16 | 歌尔股份有限公司 | A kind of MEMS microphone and baroceptor integrated morphology and preparation method thereof |
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