CN114640322A - Method for regulating center frequency of FBAR (fiber Bragg Grating) filter - Google Patents
Method for regulating center frequency of FBAR (fiber Bragg Grating) filter Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 12
- 239000000835 fiber Substances 0.000 title description 3
- 239000010408 film Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 238000002955 isolation Methods 0.000 claims abstract description 17
- 230000001276 controlling effect Effects 0.000 claims abstract description 11
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- 238000004806 packaging method and process Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 14
- 238000012360 testing method Methods 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 9
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 7
- 238000005498 polishing Methods 0.000 claims description 7
- 238000012545 processing Methods 0.000 claims description 7
- 239000000523 sample Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 238000012858 packaging process Methods 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 14
- 230000007797 corrosion Effects 0.000 abstract description 6
- 238000005260 corrosion Methods 0.000 abstract description 6
- 238000011161 development Methods 0.000 abstract description 2
- 238000003384 imaging method Methods 0.000 abstract 2
- 239000013077 target material Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910015844 BCl3 Inorganic materials 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- -1 scandium-aluminum Chemical compound 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009516 primary packaging Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0478—Resonance frequency in a process for mass production
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Abstract
A method for regulating and controlling center frequency of an FBAR filter belongs to the technical field of filter preparation. The method comprises the steps of preparing a frequency modulation layer, imaging the frequency modulation layer, performing primary frequency modulation, preparing an isolation layer, imaging the isolation layer and performing secondary frequency modulation. According to the method for regulating and controlling the center frequency of the FBAR filter, the ScAlN film is deposited on the frequency modulation layer to serve as the isolation layer, and ScAlN does not react with the developing solution, so that the problem of corrosion of the frequency modulation layer generated during development of the FBAR filter can be solved, and the frequency deviation of the filter can be effectively avoided; meanwhile, the AlN frequency modulation layer is used as a substrate for the growth of the ScAlN thin film and can be used as a seed layer during sputtering, so that the preferred orientation of the ScAlN thin film is improved, and the film forming quality is improved.
Description
Technical Field
The invention belongs to the technical field of filter preparation, and particularly relates to a method for regulating and controlling center frequency of an FBAR (fiber Bragg Reflector) filter.
Background
An FBAR (Film Body Acoustic Resonator) filter is a new type of radio frequency filter and is composed of Acoustic resonators. The frequency of the resonator is determined by the velocity of the electromagnetic or acoustic wave propagating in the cavity and the size of the cavity, which is proportional to the wave velocity. The wave velocity of the electromagnetic wave is 3 x 108m/s, the sound velocity of sound wave is 3000-11000 m/s, compared with the traditional cavity and dielectric filter which work by utilizing electromagnetic wave, the size absolute advantage is achieved, and the method is the best choice for the filter at the mobile communication end at present. The acoustic filter has the advantages of high Q value, high frequency, high reliability, small volume and batch manufacture, and is widely applied to the fields of base stations, automotive electronics, navigation, radar, communication, electronic countermeasure and the like.
At present, the packaging mode of the FBAR filter is mainly a film packaging mode of Wafer Level Package (WLP), a supporting layer is formed around each resonator by using photoresist, and then a film is attached to the supporting layer for primary packaging to isolate the filter from the outside. In the process, the developing solution can contact with the frequency modulation layer of the frequency-modulated device, and the performance of the filter is affected. At present, the material of a frequency modulation layer of the FBAR filter is mainly AlN, and AlN is corroded by a developing solution, such as PK-DEX4050 and other models, so that the frequency of the filter is higher by about 10MHz, and the problem cannot be solved through a frequency modulation process, and the defect limits the application of the packaging mode to the FBAR filter with strict requirement on a central frequency index.
Disclosure of Invention
The invention aims to provide a method for regulating and controlling the center frequency of an FBAR filter aiming at the defects in the background art, effectively solves the problem of corrosion of a developing solution in wafer-level packaging of the FBAR filter, and avoids frequency deviation of the filter during wafer-level packaging, thereby realizing accurate control of the center frequency of the FBAR filter.
In order to realize the purpose, the technical scheme adopted by the invention is as follows:
a method for regulating and controlling the center frequency of an FBAR filter comprises the following steps:
preparing an AlN film with the thickness of 50-150 nm on the upper electrode layer of the FBAR resonator by adopting a magnetron sputtering method to serve as a frequency modulation layer;
step 2, patterning of the frequency modulation layer:
carrying out graphical processing on the frequency modulation layer obtained in the step 1 by adopting a photoetching process;
step 3, primary frequency modulation:
performing probe test on the structure obtained in the step (2), performing primary frequency modulation by using an ion beam polishing machine according to the central frequency obtained by the test, and adjusting the frequency of the filter to be 20-50 MHz higher than the target frequency;
step 4, preparation of an isolation layer:
depositing an ScAlN film with the thickness of 25-100 nm on the frequency modulation layer obtained after the treatment in the step 3 by adopting a magnetron sputtering method to serve as an isolation layer; the specific process is as follows: taking the composite structure obtained after the treatment in the step 3 as a substrate, taking scandium-aluminum alloy as a target material, and taking Ar and N2The mixed gas is used as sputtering gas, Ar gas generates glow discharge under the action of high voltage to generate plasma, positive ions in the plasma can accelerate to bombard the surface of a cathode target with negative electricity, atoms close to the surface obtain energy to be separated from the target and enter vacuum, and sputtered atoms reach the surface of a substrate and are mixed with N2Generating ScAlN through reaction, depositing the ScAlN on the substrate to form a ScAlN film, wherein Ar and N2The flow ratio of (1): (2.5 to 4) under a sputtering pressure of 0.8X 10-3～1.2×10-3Pa, the sputtering power is 6000-8000W;
step 5, patterning of the isolation layer:
carrying out graphical processing on the isolation layer obtained in the step 4 by adopting a photoetching process;
step 6, secondary frequency modulation:
and (5) performing probe test on the structure obtained in the step (5), performing secondary frequency modulation by using an ion beam polishing machine according to the central frequency obtained by the test, adjusting the frequency of the filter to be target frequency, and then packaging the filter by using a wafer level package film packaging process (WLP).
Further, the FBAR resonator includes a sacrificial layer, a seed layer, a lower electrode layer, a piezoelectric layer, and an upper electrode layer, which are sequentially disposed.
Furthermore, in the ScAlN thin film in the step 4, the weight percentage of scandium is 10-30 wt%, the ScAlN thin film with the scandium can effectively resist corrosion of a developing solution, and the performances of the ScAlN thin film, such as longitudinal acoustic velocity, acoustic loss and the like, are close to those of the AlN thin film.
Compared with the prior art, the invention has the beneficial effects that:
1. according to the method for regulating and controlling the center frequency of the FBAR filter, the ScAlN film is deposited on the frequency modulation layer to serve as the isolation layer, and ScAlN does not react with the developing solution, so that the problem of corrosion of the frequency modulation layer generated during development of the FBAR filter can be solved, and the frequency deviation of the filter can be effectively avoided.
2. According to the method for regulating and controlling the center frequency of the FBAR filter, the ScAlN film is deposited on the frequency modulation layer to serve as the isolation layer, the AlN frequency modulation layer serves as a substrate for growth of the ScAlN film and can serve as a seed layer during sputtering, the preferred orientation of the ScAlN film is favorably improved, and the film forming quality is improved.
Drawings
FIG. 1 shows the thickness variation of an AlN thin film with an initial thickness of 400nm measured by a dielectric thin film measuring instrument after being soaked in a developing solution for 10 minutes;
FIG. 2 is the result of the thickness change of the ScAlN thin film with the initial thickness of 400nm measured by a medium thin film measuring instrument after being soaked in the developing solution for 10 minutes;
FIG. 3 is a S-parameter variation curve of an FBAR filter of a comparative example before and after Wafer Level Packaging (WLP);
fig. 4 is a S parameter variation curve of the FBAR filter before and after Wafer Level Package (WLP) obtained by the method of the embodiment of the present invention;
fig. 5 is a flowchart of a method for adjusting a center frequency of an FBAR filter according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Examples
A method for regulating and controlling the center frequency of an FBAR filter comprises the following steps:
preparing an AlN thin film with the thickness of 130nm on a Mo upper electrode layer of an FBAR (multilayer structure of a sacrificial layer/a seed layer/a lower electrode layer/a piezoelectric layer/an upper electrode layer) by adopting a magnetron sputtering method to serve as a frequency modulation layer; the specific process is as follows: using FBAR resonator as substrate, Al as target material, substrate as anode, target material as cathode, and Ar and N2The mixed gas is used as sputtering gas, Ar gas generates glow discharge under the action of high voltage between two polar plates to generate plasma, positive ions in the plasma can accelerate bombardment to the surface of a cathode target material with negative electricity, so that Al atoms close to the surface obtain energy to be separated from the target material and enter vacuum, and sputtered Al atoms reach the surface of a substrate and are mixed with N2Reacting to generate AlN; wherein Ar and N2The flow ratio of (1): 3, sputtering gas pressure of 1X 10-3Pa, the sputtering power is 7000W;
step 2, patterning of the frequency modulation layer:
carrying out graphical processing on the frequency modulation layer obtained in the step 1 by adopting a photoetching process; the method specifically comprises the following steps: coating glue, exposing and developing the AlN thin film prepared in the step 1, removing the AlN outside the photoresist protection area through etching, and finally removing the photoresist in the pattern area to finish the patterning of the frequency modulation layer; wherein, the photoresist thickness is about 4 μm when the AlN film is coated, and the etching gas is Cl when the AlN film is etched2、BCl3Mixed gas with Ar, Cl2、BCl3The flow ratio of the Ar to the gas is 1:2:2, and the etching pressure is 0.3 Pa;
step 3, primary frequency modulation:
performing probe test on the structure obtained in the step 2, performing primary frequency modulation by using an ion beam polishing machine according to the central frequency obtained by the test, and adjusting the frequency of the filter to be 40MHz higher than the target frequency;
step 4, preparation of an isolation layer:
depositing a ScAlN film with the thickness of 50nm on the frequency modulation layer obtained after the treatment in the step 3 by adopting a magnetron sputtering method to be used as an isolation layer; the specific process is as follows: taking the composite structure obtained after the treatment in the step 3 as a substrate, taking scandium-aluminum alloy with scandium content of 20 wt% as a target material, and taking Ar and N2The mixed gas is used as sputtering gas, Ar gas generates glow discharge under the action of high voltage to generate plasma, positive ions in the plasma can accelerate to bombard the surface of a cathode target with negative electricity, atoms close to the surface obtain energy to be separated from the target and enter vacuum, and sputtered atoms reach the surface of a substrate and are mixed with N2Generating ScAlN through reaction, depositing the ScAlN on the substrate to form a ScAlN film, wherein Ar and N2The flow ratio of (1): 3, sputtering gas pressure of 1X 10-3Pa, the sputtering power is 7000W;
step 5, patterning of the isolation layer:
and (4) carrying out graphical processing on the isolation layer obtained in the step (4) by adopting a photoetching process, wherein the specific process and etching parameters are completely the same as those in the step (2).
Step 6, secondary frequency modulation:
and (5) performing probe test on the structure obtained in the step (5), performing secondary frequency modulation by using an ion beam polishing machine according to the central frequency obtained by the test, adjusting the frequency of the filter to be target frequency, and then packaging the filter by using a wafer level package film packaging process (WLP).
Comparative example
preparing an AlN thin film with the thickness of 130nm on a Mo upper electrode layer of an FBAR (multilayer structure of a sacrificial layer/a seed layer/a lower electrode layer/a piezoelectric layer/an upper electrode layer) by adopting a magnetron sputtering method to serve as a frequency modulation layer; the specific process is as follows: using FBAR resonator as substrate, Al as target material, substrate as anode, target material as cathode, and Ar and N2The mixed gas of (a) is used as a sputtering gas,under the action of high voltage between two polar plates, Ar gas generates glow discharge to generate plasma, positive ions in the plasma can be accelerated to bombard the surface of the cathode target material with negative electricity, so that Al atoms close to the surface obtain energy to be separated from the target material and enter vacuum, and the sputtered Al atoms reach the surface of the substrate and are mixed with N2Reacting to generate AlN; wherein Ar and N2The flow ratio of (1): 3, sputtering gas pressure of 1X 10-3Pa, the sputtering power is 7000W;
step 2, patterning of the frequency modulation layer:
carrying out graphical processing on the frequency modulation layer obtained in the step 1 by adopting a photoetching process; the method specifically comprises the following steps: coating glue, exposing and developing the AlN thin film prepared in the step 1, removing the AlN outside the photoresist protection area through etching, and finally removing the photoresist in the pattern area to finish the patterning of the frequency modulation layer; wherein, the photoresist thickness is about 4 μm when the AlN film is coated, and the etching gas is Cl when the AlN film is etched2、BCl3Mixed gas with Ar, Cl2、BCl3The flow ratio of the Ar to the gas is 1:2:2, and the etching pressure is 0.3 Pa;
step 3, frequency modulation:
and (3) performing probe test on the structure obtained in the step (2), performing frequency modulation by using an ion beam polishing machine according to the central frequency obtained by the test, adjusting the frequency of the filter to be target frequency, and then packaging the filter by using a wafer level package film packaging process (WLP).
FIG. 1 is a diagram showing the thickness variation of an AlN thin film with an initial thickness of 400nm measured by a dielectric thin film measuring instrument after the AlN thin film is immersed in a developing solution for 10 minutes; FIG. 2 shows the thickness change of the ScAlN film with an initial thickness of 400nm measured by a dielectric thin film measuring instrument after soaking in the developing solution for 10 minutes. As can be seen from FIGS. 1 and 2, after the AlN thin film is immersed in the developing solution for 10min, the thickness of the AlN thin film is reduced by about 105nm, and the corrosion rate is about 10.5 nm/min; and the thickness of the ScAlN thin film is not changed, and basically no corrosion occurs.
FIG. 3 is a S-parameter variation curve of an FBAR filter of a comparative example before and after Wafer Level Packaging (WLP); as can be seen from fig. 3, the center frequency of the FBAR filter of the comparative example is changed from 3084MHz before wafer level packaging (before WLP) to 3091MHz after wafer level packaging (after WLP), and the frequency is generally higher by about 7 MHz.
Fig. 4 is an S parameter variation curve of the FBAR filter before and after Wafer Level Package (WLP) obtained by the method of the embodiment of the present invention; as can be seen from fig. 4, the overall frequency before wafer level packaging (before WLP) and after wafer level packaging (after WLP) has almost no significant shift, and the center frequency is 3103 MHz.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention, and the scope of the present invention is not limited thereto, and any modifications and equivalents made by those skilled in the art within the technical scope of the present invention as set forth in the spirit and principle of the present invention should be covered thereby.
Claims (3)
1. A method for regulating and controlling center frequency of an FBAR filter is characterized by comprising the following steps:
step 1, preparing a frequency modulation layer:
preparing an AlN film with the thickness of 50-150 nm on the upper electrode layer of the FBAR resonator by adopting a magnetron sputtering method to serve as a frequency modulation layer;
step 2, patterning of the frequency modulation layer:
carrying out graphical processing on the frequency modulation layer obtained in the step 1 by adopting a photoetching process;
step 3, primary frequency modulation:
performing probe test on the structure obtained in the step (2), performing primary frequency modulation by using an ion beam polishing machine according to the central frequency obtained by the test, and adjusting the frequency of the filter to be 20-50 MHz higher than the target frequency;
step 4, preparation of an isolation layer:
depositing an ScAlN film with the thickness of 25-100 nm on the frequency modulation layer obtained after the treatment in the step 3 by adopting a magnetron sputtering method to serve as an isolation layer;
step 5, patterning of the isolation layer:
carrying out graphical processing on the isolation layer obtained in the step 4 by adopting a photoetching process;
step 6, secondary frequency modulation:
and (5) performing probe test on the structure obtained in the step (5), performing secondary frequency modulation by using an ion beam polishing machine according to the central frequency obtained by the test, adjusting the frequency of the filter to be a target frequency, and then packaging the filter by using a film packaging process of wafer level packaging.
2. The method for controlling a center frequency of an FBAR filter according to claim 1, wherein the FBAR resonator comprises a sacrificial layer, a seed layer, a lower electrode layer, a piezoelectric layer and an upper electrode layer sequentially disposed in step 1.
3. The method for regulating and controlling the center frequency of an FBAR filter as claimed in claim 1, wherein in the ScAlN thin film in the step 4, the scandium content is 10-30 wt%.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150084719A1 (en) * | 2012-05-22 | 2015-03-26 | Murata Manufacturing Co., Ltd. | Bulk Wave Resonator |
| CN110224685A (en) * | 2019-05-13 | 2019-09-10 | 电子科技大学 | A kind of monocrystal thin films bulk accoustic wave filter and its fine machining method |
| CN110729979A (en) * | 2019-09-30 | 2020-01-24 | 中国电子科技集团公司第二十六研究所 | Wafer-level packaging method and structure of film bulk acoustic wave filter |
| CN111162746A (en) * | 2020-01-18 | 2020-05-15 | 杭州见闻录科技有限公司 | Flat piezoelectric layer structure of bulk acoustic wave resonator and manufacturing process |
| CN112242826A (en) * | 2020-10-14 | 2021-01-19 | 瑞声声学科技(深圳)有限公司 | Film bulk acoustic resonator |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150084719A1 (en) * | 2012-05-22 | 2015-03-26 | Murata Manufacturing Co., Ltd. | Bulk Wave Resonator |
| CN110224685A (en) * | 2019-05-13 | 2019-09-10 | 电子科技大学 | A kind of monocrystal thin films bulk accoustic wave filter and its fine machining method |
| CN110729979A (en) * | 2019-09-30 | 2020-01-24 | 中国电子科技集团公司第二十六研究所 | Wafer-level packaging method and structure of film bulk acoustic wave filter |
| CN111162746A (en) * | 2020-01-18 | 2020-05-15 | 杭州见闻录科技有限公司 | Flat piezoelectric layer structure of bulk acoustic wave resonator and manufacturing process |
| CN112242826A (en) * | 2020-10-14 | 2021-01-19 | 瑞声声学科技(深圳)有限公司 | Film bulk acoustic resonator |
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| Title |
|---|
| GU HAO-SHUANG等: "Fabrication and Characteristics of Thin Film Bulk Acoustic Resonators with Highly c-Axis Oriented AlN Films", 《CHINESE PHYSICS LETTERS》 * |
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