[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN114627985B - Optimization method, system and medium for polishing process of indium phosphide material - Google Patents

Optimization method, system and medium for polishing process of indium phosphide material Download PDF

Info

Publication number
CN114627985B
CN114627985B CN202210094552.8A CN202210094552A CN114627985B CN 114627985 B CN114627985 B CN 114627985B CN 202210094552 A CN202210094552 A CN 202210094552A CN 114627985 B CN114627985 B CN 114627985B
Authority
CN
China
Prior art keywords
polishing
pressure head
indium phosphide
head
polishing pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202210094552.8A
Other languages
Chinese (zh)
Other versions
CN114627985A (en
Inventor
潘功寰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Zhongdi Semiconductor Material Co ltd
Original Assignee
Suzhou Zhongdi Semiconductor Material Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Zhongdi Semiconductor Material Co ltd filed Critical Suzhou Zhongdi Semiconductor Material Co ltd
Priority to CN202210094552.8A priority Critical patent/CN114627985B/en
Publication of CN114627985A publication Critical patent/CN114627985A/en
Application granted granted Critical
Publication of CN114627985B publication Critical patent/CN114627985B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G16INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTED FOR SPECIFIC APPLICATION FIELDS
    • G16CCOMPUTATIONAL CHEMISTRY; CHEMOINFORMATICS; COMPUTATIONAL MATERIALS SCIENCE
    • G16C60/00Computational materials science, i.e. ICT specially adapted for investigating the physical or chemical properties of materials or phenomena associated with their design, synthesis, processing, characterisation or utilisation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Theoretical Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Bioinformatics & Cheminformatics (AREA)
  • Bioinformatics & Computational Biology (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Abstract

The invention relates to a polishing process optimization method and a polishing process optimization system for an indium phosphide material, which belong to the technical field of indium phosphide processing, and the method is characterized by collecting the real-time processing condition of the indium phosphide material in the polishing process; further establishing a polishing evaluation model, obtaining processing drawing parameters of the indium phosphide material, and guiding the processing drawing parameters of the indium phosphide material into the polishing evaluation model for training to obtain a trained polishing evaluation model; the real-time processing condition of the indium phosphide material in the polishing process is imported into the trained polishing evaluation model to obtain an evaluation probability value; and adjusting the processing parameters of the polishing press head based on the evaluation probability value. And further, the loading force is changed by controlling the effective kinetic energy value generated in the polishing process, so that the polishing damage phenomenon of the indium phosphide material in the polishing process can be effectively avoided.

Description

Optimization method, system and medium for polishing process of indium phosphide material
Technical Field
The invention relates to the field of indium phosphide processing, in particular to a polishing process optimization method, a polishing process optimization system and a polishing process optimization medium for an indium phosphide material.
Background
Indium phosphide (InP) is an important group iii-v compound semiconductor material, and can be prepared by reacting white phosphorus with indium iodide at 400 ℃. The indium phosphide has a direct transition energy band structure, has a wider forbidden band width of 1.35 eV at normal temperature, has higher conversion rate when being applied to solar cells, has better radiation resistance than Si, gaAs and other semiconductor materials, has high working temperature (675-725K), and is very suitable for being used as a solar cell material of an artificial satellite. The indium phosphide monocrystal has a zinc blende structure and has very high lattice matching degree with In-GaAs and InAsP, the wavelength of a light-emitting diode manufactured by growing InGaAs and InAsP films by taking indium phosphide as a substrate is adapted to the minimum loss wavelength of a quartz optical fiber applied to optical communication, so that the transmission loss In the optical communication can be effectively reduced, and the transmission efficiency is improved. In addition, the indium phosphide has higher electron migration rate and good optical performance, and can be used as a substrate material for manufacturing photoelectric devices and photoelectric integrated circuits.
However, polishing of indium phosphide material is the last process of wafer surface processing, with the aim of reducing surface roughness and obtaining a smooth surface without damage. Common polishing methods are mechanical polishing, chemical Mechanical Polishing (CMP), magnetorheological polishing, elastic emission polishing, dynamic pressure float polishing, low temperature polishing, and the like. Indium phosphide is used as a semiconductor substrate and needs to be subjected to the technological processes of single crystal growth, slicing, outer circle chamfering, grinding, polishing, cleaning and the like. Because indium phosphide has small hardness and soft and brittle texture, surface damage is easy to occur on the surface of a wafer in sawing and grinding processing processes. In the polishing process, the polishing effect is influenced by the taper of the polished pressure head when the polished pressure head is contacted with the surface of the indium phosphide, once the taper exceeds a certain range, the polishing effect is easily influenced, the loading force in the polishing process is changed, further, the critical pressure and the expansion of cracks are generated on the material, the polishing effect influences the final delivery quality, the polishing effect is poor, the previous working procedures are wasted, and the processing cost is high.
Disclosure of Invention
The invention overcomes the defects of the prior art and provides a polishing process optimization method, a polishing process optimization system and a polishing process optimization medium for an indium phosphide material.
In order to achieve the above purpose, the invention adopts the following technical scheme:
The first aspect of the invention provides a polishing process optimization method for an indium phosphide material, which comprises the following steps:
collecting real-time processing conditions of the indium phosphide material in the polishing process;
Establishing a polishing evaluation model, obtaining processing drawing parameters of an indium phosphide material, and guiding the processing drawing parameters of the indium phosphide material into the polishing evaluation model for training to obtain a trained polishing evaluation model;
The real-time processing condition of the indium phosphide material in the polishing process is imported into the trained polishing evaluation model to obtain an evaluation probability value;
And adjusting the processing parameters of the polishing press head based on the evaluation probability value.
Further, in a preferred embodiment of the present invention, the real-time processing condition of the indium phosphide material in the polishing process is imported into the trained polishing evaluation model to obtain an evaluation probability value, which specifically includes the following steps:
acquiring image information of the contact surface of the polishing pressure head and the indium phosphide material;
establishing a real-time model diagram of the polishing pressure head based on the image information, guiding the real-time model diagram of the polishing pressure head into the trained polishing evaluation model, and calculating the taper of the polishing pressure head;
acquiring the material characteristics of the indium phosphide material through a big data network; the material characteristics include hardness and elastic modulus of the indium phosphide material;
And calculating an evaluation probability value based on the taper of the polishing pressure head and the material characteristic of the indium phosphide material.
Further, in a preferred embodiment of the present invention, the evaluation probability value is calculated based on the taper of the polishing head and the material property of the indium phosphide material, and specifically includes the following steps:
acquiring the material characteristics of a polishing pressure head through a big data network; the material characteristics of the polishing press head comprise hardness and elastic modulus of the polishing press head;
According to the taper of the polishing pressure head and the material characteristics of the polishing pressure head, the loading force generated when the current polishing pressure head is contacted with the indium phosphide material is obtained;
Comparing the loading force with a preset loading force to obtain an evaluation probability value; the loading force is a pressure value generated when the polishing press head is in contact with the indium phosphide material.
Further, in a preferred embodiment of the present invention, the method for adjusting the processing parameters of the polishing head based on the estimated probability value comprises the following steps:
Judging whether the evaluation probability value is larger than a preset evaluation probability value or not;
If the polishing pressure head is larger than the preset polishing pressure head, adjusting the processing parameters of the current polishing pressure head; the processing parameters include the rotational speed of the polishing head and the feed rate of the polishing head.
Further, in a preferred embodiment of the present invention, the method for optimizing the polishing process of an indium phosphide material further comprises the steps of:
acquiring the machining parameters of the adjusted polishing press head;
obtaining the material removal rate in a preset time based on the adjusted machining parameters of the polishing press head;
Judging whether the material removal rate is within a preset material removal rate range;
If not, a control command for replacing the polishing pressure head is sent out.
Further, in a preferred embodiment of the present invention, a real-time model map of the polishing press head is built based on the image information, and the real-time model map of the polishing press head is imported into the trained polishing evaluation model to calculate the taper of the polishing press head, which specifically includes the following steps:
establishing a real-time model diagram of the polishing press head based on the image information;
obtaining the abrasion loss of the polishing pressure head based on the real-time model diagram of the polishing pressure head and the material characteristics of the indium phosphide material;
Establishing a wear model diagram according to the wear amount of the polishing pressure head, and obtaining a final polishing pressure head real-time model diagram based on the polishing pressure head real-time model diagram and the wear model diagram;
And importing the final polishing pressure head real-time model graph into the trained polishing evaluation model to obtain the taper of the polishing pressure head.
The second aspect of the present invention provides a polishing process optimization system for an indium phosphide material, the system comprising a memory and a processor, wherein the memory comprises a polishing process optimization method program for the indium phosphide material, and when the polishing process optimization method program for the indium phosphide material is executed, the following steps are realized:
collecting real-time processing conditions of the indium phosphide material in the polishing process;
Establishing a polishing evaluation model, obtaining processing drawing parameters of an indium phosphide material, and guiding the processing drawing parameters of the indium phosphide material into the polishing evaluation model for training to obtain a trained polishing evaluation model;
The real-time processing condition of the indium phosphide material in the polishing process is imported into the trained polishing evaluation model to obtain an evaluation probability value; the estimated probability value is a probability value of whether the geometry of the polishing pressure head can cause the indium phosphide material to generate cracks;
And adjusting the processing parameters of the polishing press head based on the evaluation probability value.
Further, in a preferred embodiment of the present invention, the polishing process optimization system for an indium phosphide material introduces real-time processing conditions of the indium phosphide material during a polishing process into the trained polishing evaluation model to obtain an evaluation probability value, and specifically includes the following steps:
acquiring image information of the contact surface of the polishing pressure head and the indium phosphide material;
establishing a real-time model diagram of the polishing pressure head based on the image information, guiding the real-time model diagram of the polishing pressure head into the trained polishing evaluation model, and calculating the taper of the polishing pressure head;
acquiring the material characteristics of the indium phosphide material through a big data network; the material characteristics include hardness and elastic modulus of the indium phosphide material;
And calculating an evaluation probability value based on the taper of the polishing pressure head and the material characteristic of the indium phosphide material.
Further, in a preferred embodiment of the present invention, the polishing process optimization system for indium phosphide material establishes a real-time model diagram of a polishing press head based on the image information, and introduces the real-time model diagram of the polishing press head into the trained polishing evaluation model to calculate the taper of the polishing press head, and specifically includes the following steps:
establishing a real-time model diagram of the polishing press head based on the image information;
obtaining the abrasion loss of the polishing pressure head based on the real-time model diagram of the polishing pressure head and the material characteristics of the indium phosphide material;
Establishing a wear model diagram according to the wear amount of the polishing pressure head, and obtaining a final polishing pressure head real-time model diagram based on the polishing pressure head real-time model diagram and the wear model diagram;
And importing the final polishing pressure head real-time model graph into the trained polishing evaluation model to obtain the taper of the polishing pressure head.
A third aspect of the present invention provides a computer-readable storage medium including therein a polishing process optimization method program of an indium phosphide material, which when executed by a processor, implements the steps of the polishing process optimization method of an indium phosphide material of any one of the above.
The invention solves the defects existing in the background technology and can achieve the following technical effects:
The invention collects the real-time processing condition of the indium phosphide material in the polishing process; further establishing a polishing evaluation model, obtaining processing drawing parameters of the indium phosphide material, and guiding the processing drawing parameters of the indium phosphide material into the polishing evaluation model for training to obtain a trained polishing evaluation model; the real-time processing condition of the indium phosphide material in the polishing process is imported into the trained polishing evaluation model to obtain an evaluation probability value; and adjusting the processing parameters of the polishing press head based on the evaluation probability value. And further, the loading force is changed by controlling the effective kinetic energy value generated in the polishing process, so that the polishing damage phenomenon of the indium phosphide material in the polishing process can be effectively avoided.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other embodiments of the drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 shows a specific method flow diagram of a polishing process optimization method for an indium phosphide material;
FIG. 2 illustrates a flow chart of a method of deriving an estimated probability value;
FIG. 3 illustrates a flowchart of a particular method of calculating an evaluation probability value;
FIG. 4 illustrates a flow chart of a method of replacing a polishing head;
FIG. 5 illustrates a flow chart of a method of obtaining the taper of a polishing head;
fig. 6 shows a system frame of a polishing process optimization system for indium phosphide material.
Detailed Description
In order that the above-recited objects, features and advantages of the present application will be more clearly understood, a more particular description of the application will be rendered by reference to the appended drawings and appended detailed description. It should be noted that, without conflict, the embodiments of the present application and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those described herein, and therefore the scope of the present invention is not limited to the specific embodiments disclosed below.
The first aspect of the invention provides a polishing process optimization method for an indium phosphide material, which comprises the following steps:
S102, collecting real-time processing conditions of the indium phosphide material in the polishing process;
S104, establishing a polishing evaluation model, obtaining processing drawing parameters of the indium phosphide material, and importing the processing drawing parameters of the indium phosphide material into the polishing evaluation model for training to obtain a trained polishing evaluation model;
S106, importing the real-time processing condition of the indium phosphide material in the polishing process into the trained polishing evaluation model to obtain an evaluation probability value;
and S108, adjusting the processing parameters of the polishing pressure head based on the evaluation probability value.
The method is characterized in that a camera is used for acquiring real-time processing conditions of the indium phosphide material in the polishing process, a neural network or a convolution neural network is used for establishing a polishing evaluation model, wherein processing drawing parameters comprise the surface roughness of indium phosphide which is finally processed and formed, and therefore a trained polishing evaluation model is established.
Further, in a preferred embodiment of the present invention, the real-time processing condition of the indium phosphide material in the polishing process is imported into the trained polishing evaluation model to obtain an evaluation probability value, which specifically includes the following steps:
S202, acquiring image information of a contact surface of a polishing pressure head and an indium phosphide material;
s204, establishing a real-time model diagram of the polishing pressure head based on the image information, importing the real-time model diagram of the polishing pressure head into the trained polishing evaluation model, and calculating the taper of the polishing pressure head;
S206, obtaining the material characteristics of the indium phosphide material through a big data network; the material characteristics include hardness and elastic modulus of the indium phosphide material;
And S208, calculating an evaluation probability value based on the taper of the polishing pressure head and the material characteristics of the indium phosphide material.
The image information of the contact surface of the polishing press head and the indium phosphide material is obtained by using a camera, and the image information comprises the outline size information of the contact surface of the polishing press head. Wherein the taper of the polishing head is related to the amount of wear of the polishing head and the indium phosphide material during processing to a certain extent, and after the amount of wear is formed, the volume of the polishing head is changed to a certain extent, wherein the polishing evaluation model satisfies:
wherein P is the taper of the polishing head, which is between 0 and 1; v is the original volume of the polishing press head; Is the wear volume of the polishing head; e is the elastic modulus of the indium phosphide material; k is the hardness of the polishing press head;
It should be noted that, according to the polishing evaluation model, the taper value of the polishing pressure head can be obtained, when the taper is closer to the value 1, the contact area between the polishing pressure head and the surface of indium phosphide is larger, and the surface of the value is not easy to cause surface damage of the indium phosphide material in the polishing process; conversely, when the taper value is closer to 0, it is indicated that the indium phosphide material is susceptible to surface damage below the taper value.
Further, in a preferred embodiment of the present invention, the evaluation probability value is calculated based on the taper of the polishing head and the material property of the indium phosphide material, and specifically includes the following steps:
S302, acquiring the material characteristics of a polishing pressure head through a big data network; the material characteristics of the polishing press head comprise hardness and elastic modulus of the polishing press head;
s304, obtaining loading force generated when the current polishing pressure head contacts with the indium phosphide material according to the taper of the polishing pressure head and the material characteristics of the polishing pressure head;
s306, comparing the loading force with a preset loading force to obtain an evaluation probability value; the loading force is a pressure value generated when the polishing press head is in contact with the indium phosphide material.
In the polishing process, the polishing pressure head is in contact with the indium phosphide material, so that a certain contact force can be generated, and therefore, the loading force satisfies the following relation:
Wherein F is loading force; is a dimensionless constant, and takes a value of 1; e is the elastic modulus of the polishing press head; m is an effective kinetic energy value generated in the polishing process; h is the material hardness of the polishing press head; q is the material toughness of the polishing press head; p is the taper of the polishing head.
The effective kinetic energy value generated in the polishing process is the kinetic energy value brought by the polishing feeding speed in the polishing process; the material toughness of the polishing head may be obtained from a large data network, in relation to the material of the polishing head. According to the relation, the loading force condition in the polishing process can be obtained, so that the loading force and the preset loading force are utilized to perform the formula calculation, and an evaluation probability value is obtained through calculation. When the evaluation probability value is close to the preset evaluation probability value, the ratio is closer to 1 at this time, which indicates that the loading force meets the preset loading force, and the damage to the surface of the total indium phosphide material in the polishing process can not be caused under the taper of the polishing pressure head. When the ratio is larger, the damage to the surface of the total indium phosphide material in the polishing process can be caused, and at the moment, the remote control terminal (such as a computer) of the polishing machine can change the loading force by controlling the effective kinetic energy value generated in the polishing process, so that the polishing damage phenomenon of the indium phosphide material in the polishing process can be effectively avoided.
Further, in a preferred embodiment of the present invention, the method for adjusting the processing parameters of the polishing head based on the estimated probability value comprises the following steps:
Judging whether the evaluation probability value is larger than a preset evaluation probability value or not;
If the polishing pressure head is larger than the preset polishing pressure head, adjusting the processing parameters of the current polishing pressure head; the processing parameters include the rotational speed of the polishing head and the feed rate of the polishing head.
Further, in a preferred embodiment of the present invention, the method for optimizing the polishing process of an indium phosphide material further comprises the steps of:
s402, acquiring processing parameters of the adjusted polishing pressure head;
s404, obtaining the material removal rate in a preset time based on the processing parameters of the adjusted polishing press head;
s406, judging whether the material removal rate is within a preset material removal rate range;
And S408, if not, sending out a control command for replacing the polishing pressure head.
It should be noted that, according to the above-mentioned loading force calculation method, although the effective kinetic energy value in the polishing process is adjusted according to the processing parameters of the adjusted polishing press head, the feeding speed in the polishing process should be within the preset range, since the feeding speed in the polishing process affects the material removal rate, the higher the feeding speed is, the higher the material removal rate is, when the material removal rate is within the preset range, the polishing effect is the best at this time, since the taper is changed in the polishing process, the loading force needs to be kept within a certain range, and the feeding speed in the polishing process has to be adjusted at this time, and the feeding speed needs to be kept within a certain range; when the adjusted feed rate cannot be maintained within the preset feed rate (because the feed rate is maintained within the preset range, the polishing effect is better), the polishing head needs to be replaced.
Further, in a preferred embodiment of the present invention, a real-time model map of the polishing press head is built based on the image information, and the real-time model map of the polishing press head is imported into the trained polishing evaluation model to calculate the taper of the polishing press head, which specifically includes the following steps:
S502, establishing a real-time model diagram of the polishing pressure head based on the image information;
s504, obtaining the abrasion loss of the polishing pressure head based on the real-time model diagram of the polishing pressure head and the material characteristics of the indium phosphide material;
s506, establishing a wear model diagram according to the wear amount of the polishing pressure head, and obtaining a final polishing pressure head real-time model diagram based on the polishing pressure head real-time model diagram and the wear model diagram;
And S508, importing the final polishing pressure head real-time model diagram into the trained polishing evaluation model to obtain the taper of the polishing pressure head.
It should be noted that, the three-dimensional modeling software is used to model the workpiece to be polished according to the image information, such as 3DSMAX software, maya three-dimensional modeling software, rhino three-dimensional modeling software, and the like, and due to the material characteristics of indium phosphide and the material characteristics of the polishing press head, when the two are contacted, the polishing press head also generates a certain abrasion, and the abrasion amount can be obtained through a big data network, and represents the abrasion amount generated by the polishing press head at the feeding speed. And the three-dimensional modeling software is utilized to establish a wear model diagram according to the wear amount of the polishing press head, so that the three-dimensional modeling software is utilized again to calculate the taper value in the polishing process according to the wear model diagram volume difference of the real-time model diagram of the polishing press head, thereby obtaining the final real-time model diagram of the polishing press head. Because the images which can be acquired by the camera are limited, the taper of the polishing pressure head can be updated in real time by utilizing the method.
The method can further comprise the following steps:
obtaining the final processing condition of the indium phosphide material;
Establishing an indium phosphide material recommendation model based on a neural network, and introducing a training set of pre-trained indium phosphide processing conditions into the indium phosphide material recommendation model to obtain a trained indium phosphide material recommendation model;
Leading the final processing condition of the indium phosphide material into the trained indium phosphide material recommendation model to obtain a training result of the processing condition of the indium phosphide material;
And determining the use of the indium phosphide material according to the training result of the processing condition of the indium phosphide material.
It should be noted that, the neural network or the convolutional neural network is utilized to build an indium phosphide material recommendation model, in this process, the indium phosphide material recommendation model can be understood as that the final processing condition of the indium phosphide material, for example, the surface roughness of the indium phosphide material accords with the use standard of the semiconductor material, the training result obtained at this time accords with the use standard of the semiconductor material, and the use can be recommended according to the final practical condition by utilizing the method, and the recycling of material resources is caused.
The second aspect of the present invention provides a polishing process optimization system for an indium phosphide material, the system comprising a memory 41 and a processor 62, wherein the memory 41 comprises a polishing process optimization method program for the indium phosphide material, and the polishing process optimization method program for the indium phosphide material is executed to realize the following steps:
collecting real-time processing conditions of the indium phosphide material in the polishing process;
Establishing a polishing evaluation model, obtaining processing drawing parameters of an indium phosphide material, and guiding the processing drawing parameters of the indium phosphide material into the polishing evaluation model for training to obtain a trained polishing evaluation model;
The real-time processing condition of the indium phosphide material in the polishing process is imported into the trained polishing evaluation model to obtain an evaluation probability value;
And adjusting the processing parameters of the polishing press head based on the evaluation probability value.
The method is characterized in that a camera is used for acquiring real-time processing conditions of the indium phosphide material in the polishing process, a neural network or a convolution neural network is used for establishing a polishing evaluation model, wherein processing drawing parameters comprise the surface roughness of indium phosphide which is finally processed and formed, and therefore a trained polishing evaluation model is established.
Further, in a preferred embodiment of the present invention, the real-time processing condition of the indium phosphide material in the polishing process is imported into the trained polishing evaluation model to obtain an evaluation probability value, which specifically includes the following steps:
acquiring image information of the contact surface of the polishing pressure head and the indium phosphide material;
establishing a real-time model diagram of the polishing pressure head based on the image information, guiding the real-time model diagram of the polishing pressure head into the trained polishing evaluation model, and calculating the taper of the polishing pressure head;
acquiring the material characteristics of the indium phosphide material through a big data network; the material characteristics include hardness and elastic modulus of the indium phosphide material;
And calculating an evaluation probability value based on the taper of the polishing pressure head and the material characteristic of the indium phosphide material.
The image information of the contact surface of the polishing press head and the indium phosphide material is obtained by using a camera, and the image information comprises the outline size information of the contact surface of the polishing press head. Wherein the taper of the polishing head is related to the amount of wear of the polishing head and the indium phosphide material during processing to a certain extent, and after the amount of wear is formed, the volume of the polishing head is changed to a certain extent, wherein the polishing evaluation model satisfies:
wherein P is the taper of the polishing head, which is between 0 and 1; v is the original volume of the polishing press head; Is the wear volume of the polishing head; e is the elastic modulus of the indium phosphide material; k is the hardness of the polishing press head;
It should be noted that, according to the polishing evaluation model, the taper value of the polishing pressure head can be obtained, when the taper is closer to the value 1, the contact area between the polishing pressure head and the surface of indium phosphide is larger, and the surface of the value is not easy to cause surface damage of the indium phosphide material in the polishing process; conversely, when the taper value is closer to 0, it is indicated that the indium phosphide material is susceptible to surface damage below the taper value.
Further, in a preferred embodiment of the present invention, the evaluation probability value is calculated based on the taper of the polishing head and the material property of the indium phosphide material, and specifically includes the following steps:
acquiring the material characteristics of a polishing pressure head through a big data network; the material characteristics of the polishing press head comprise hardness and elastic modulus of the polishing press head;
According to the taper of the polishing pressure head and the material characteristics of the polishing pressure head, the loading force generated when the current polishing pressure head is contacted with the indium phosphide material is obtained;
Comparing the loading force with a preset loading force to obtain an evaluation probability value; the loading force is a pressure value generated when the polishing press head is in contact with the indium phosphide material.
In the polishing process, the polishing head is in contact with the indium phosphide material, so that a certain contact force can be generated, and therefore, the contact force satisfies the following relation:
Wherein F is loading force; is a dimensionless constant, and takes a value of 1; e is the elastic modulus of the polishing press head; m is an effective kinetic energy value generated in the polishing process; h is the material hardness of the polishing press head; q is the material toughness of the polishing press head; p is the taper of the polishing head.
The effective kinetic energy value generated in the polishing process is the kinetic energy value brought by the polishing feeding speed in the polishing process; the material toughness of the polishing head may be obtained from a large data network, in relation to the material of the polishing head. According to the relation, the loading force condition in the polishing process can be obtained, so that the loading force and the preset loading force are utilized to perform the formula calculation, and an evaluation probability value is obtained through calculation. When the evaluation probability value is close to the preset evaluation probability value, the ratio is closer to 1 at this time, which indicates that the loading force meets the preset loading force, and the damage to the surface of the total indium phosphide material in the polishing process can not be caused under the taper of the polishing pressure head. When the ratio is larger, the damage to the surface of the total indium phosphide material in the polishing process can be caused, and at the moment, the remote control terminal (such as a computer) of the polishing machine can change the loading force by controlling the effective kinetic energy value generated in the polishing process, so that the polishing damage phenomenon of the indium phosphide material in the polishing process can be effectively avoided.
Further, in a preferred embodiment of the present invention, the method for adjusting the processing parameters of the polishing head based on the estimated probability value comprises the following steps:
Judging whether the evaluation probability value is larger than a preset evaluation probability value or not;
If the polishing pressure head is larger than the preset polishing pressure head, adjusting the processing parameters of the current polishing pressure head; the processing parameters include the rotational speed of the polishing head and the feed rate of the polishing head.
Further, in a preferred embodiment of the present invention, the method for optimizing the polishing process of an indium phosphide material further comprises the steps of:
acquiring the machining parameters of the adjusted polishing press head;
obtaining the material removal rate in a preset time based on the adjusted machining parameters of the polishing press head;
Judging whether the material removal rate is within a preset material removal rate range;
If not, a control command for replacing the polishing pressure head is sent out.
It should be noted that, according to the above-mentioned loading force calculation method, although the effective kinetic energy value in the polishing process is adjusted according to the processing parameters of the adjusted polishing press head, the feeding speed in the polishing process should be within the preset range, since the feeding speed in the polishing process affects the material removal rate, the higher the feeding speed is, the higher the material removal rate is, when the material removal rate is within the preset range, the polishing effect is the best at this time, since the taper is changed in the polishing process, the loading force needs to be kept within a certain range, and the feeding speed in the polishing process has to be adjusted at this time, and the feeding speed needs to be kept within a certain range; when the adjusted feed rate cannot be maintained within the preset feed rate (because the feed rate is maintained within the preset range, the polishing effect is better), the polishing head needs to be replaced.
Further, in a preferred embodiment of the present invention, a real-time model map of the polishing press head is built based on the image information, and the real-time model map of the polishing press head is imported into the trained polishing evaluation model to calculate the taper of the polishing press head, which specifically includes the following steps:
establishing a real-time model diagram of the polishing press head based on the image information;
obtaining the abrasion loss of the polishing pressure head based on the real-time model diagram of the polishing pressure head and the material characteristics of the indium phosphide material;
Establishing a wear model diagram according to the wear amount of the polishing pressure head, and obtaining a final polishing pressure head real-time model diagram based on the polishing pressure head real-time model diagram and the wear model diagram;
And importing the final polishing pressure head real-time model graph into the trained polishing evaluation model to obtain the taper of the polishing pressure head.
It should be noted that, the three-dimensional modeling software is used to model the workpiece to be polished according to the image information, such as 3DSMAX software, maya three-dimensional modeling software, rhino three-dimensional modeling software, and the like, and due to the material characteristics of indium phosphide and the material characteristics of the polishing press head, when the two are contacted, the polishing press head also generates a certain abrasion, and the abrasion amount can be obtained through a big data network, and represents the abrasion amount generated by the polishing press head at the feeding speed. And the three-dimensional modeling software is utilized to establish a wear model diagram according to the wear amount of the polishing press head, so that the three-dimensional modeling software is utilized again to calculate the taper value in the polishing process according to the wear model diagram volume difference of the real-time model diagram of the polishing press head, thereby obtaining the final real-time model diagram of the polishing press head.
The method can further comprise the following steps:
obtaining the final processing condition of the indium phosphide material;
Establishing an indium phosphide material recommendation model based on a neural network, and introducing a training set of pre-trained indium phosphide processing conditions into the indium phosphide material recommendation model to obtain a trained indium phosphide material recommendation model;
Leading the final processing condition of the indium phosphide material into the trained indium phosphide material recommendation model to obtain a training result of the processing condition of the indium phosphide material;
And determining the use of the indium phosphide material according to the training result of the processing condition of the indium phosphide material.
It should be noted that, the neural network or the convolutional neural network is utilized to build an indium phosphide material recommendation model, in this process, the indium phosphide material recommendation model can be understood as that the final processing condition of the indium phosphide material, for example, the surface roughness of the indium phosphide material accords with the use standard of the semiconductor material, the training result obtained at this time accords with the use standard of the semiconductor material, and the use can be recommended according to the final practical condition by utilizing the method, and the recycling of material resources is caused.
A third aspect of the present invention provides a computer-readable storage medium including therein a polishing process optimization method program of an indium phosphide material, which when executed by the processor 62, implements the steps of the polishing process optimization method of an indium phosphide material of any one of the above.
In the several embodiments provided by the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above described device embodiments are only illustrative, e.g. the division of the units is only one logical function division, and there may be other divisions in practice, such as: multiple units or components may be combined or may be integrated into another system, or some features may be omitted, or not performed. In addition, the various components shown or discussed may be coupled or directly coupled or communicatively coupled to each other via some interface, whether indirectly coupled or communicatively coupled to devices or units, whether electrically, mechanically, or otherwise.
The units described above as separate components may or may not be physically separate, and components shown as units may or may not be physical units; can be located in one place or distributed to a plurality of network units; some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in each embodiment of the present invention may be integrated in one processing unit, or each unit may be separately used as one unit, or two or more units may be integrated in one unit; the integrated units may be implemented in hardware or in hardware plus software functional units.
Those of ordinary skill in the art will appreciate that: all or part of the steps for implementing the above method embodiments may be implemented by hardware related to program instructions, and the foregoing program may be stored in a computer readable storage medium, where the program, when executed, performs steps including the above method embodiments; and the aforementioned storage medium includes: a mobile storage device, a Read-Only Memory (ROM), a random access Memory (RAM, random Access Memory), a magnetic disk or optical disk, or the like, which can store program codes.
Or the above-described integrated units of the invention may be stored in a computer-readable storage medium if implemented in the form of software functional modules and sold or used as separate products. Based on such understanding, the technical solutions of the embodiments of the present invention may be embodied in essence or a part contributing to the prior art in the form of a software product stored in a storage medium, including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute all or part of the methods of the embodiments of the present invention. And the aforementioned storage medium includes: a removable storage device, ROM, RAM, magnetic or optical disk, or other medium capable of storing program code.
The foregoing is merely illustrative embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think about variations or substitutions within the technical scope of the present invention, and the invention should be covered. Therefore, the protection scope of the invention is subject to the protection scope of the claims.

Claims (4)

1. The polishing process optimization method for the indium phosphide material is characterized by comprising the following steps of:
collecting real-time processing conditions of the indium phosphide material in the polishing process;
Establishing a polishing evaluation model, obtaining processing drawing parameters of an indium phosphide material, and guiding the processing drawing parameters of the indium phosphide material into the polishing evaluation model for training to obtain a trained polishing evaluation model;
The real-time processing condition of the indium phosphide material in the polishing process is imported into the trained polishing evaluation model to obtain an evaluation probability value;
adjusting a processing parameter of the polishing press head based on the evaluation probability value;
The method comprises the following steps of:
acquiring image information of the contact surface of the polishing pressure head and the indium phosphide material;
establishing a real-time model diagram of the polishing pressure head based on the image information, guiding the real-time model diagram of the polishing pressure head into the trained polishing evaluation model, and calculating the taper of the polishing pressure head;
Acquiring the material characteristics of a polishing pressure head through a big data network; the material characteristics include hardness and elastic modulus of the polishing press head;
calculating an evaluation probability value based on the taper of the polishing pressure head and the material characteristic of the polishing pressure head;
the method for calculating the evaluation probability value based on the taper of the polishing pressure head and the material characteristics of the polishing pressure head specifically comprises the following steps:
According to the taper of the polishing pressure head and the material characteristics of the polishing pressure head, the loading force generated when the current polishing pressure head is contacted with the indium phosphide material is obtained;
comparing the loading force with a preset loading force to obtain an evaluation probability value; the loading force is a pressure value generated when the polishing press head is in contact with the indium phosphide material;
The method specifically comprises the following steps of:
Judging whether the evaluation probability value is larger than a preset evaluation probability value or not;
If the polishing pressure head is larger than the preset polishing pressure head, adjusting the processing parameters of the current polishing pressure head; the processing parameters comprise the rotating speed of the polishing press head and the feeding speed of the polishing press head;
The method comprises the steps of establishing a real-time model diagram of the polishing pressure head based on the image information, importing the real-time model diagram of the polishing pressure head into the trained polishing evaluation model, and calculating the taper of the polishing pressure head, and specifically comprises the following steps:
establishing a real-time model diagram of the polishing press head based on the image information;
obtaining the abrasion loss of the polishing pressure head based on the real-time model diagram of the polishing pressure head and the material characteristics of the polishing pressure head;
Establishing a wear model diagram according to the wear amount of the polishing pressure head, and obtaining a final polishing pressure head real-time model diagram based on the polishing pressure head real-time model diagram and the wear model diagram;
importing the final polishing pressure head real-time model diagram into the trained polishing evaluation model to obtain the taper of the polishing pressure head;
wherein the polishing evaluation model satisfies:
wherein P is the taper of the polishing press head, and the value is between 0 and 1; v is the original volume of the polishing press head; is the wear volume of the polishing head; e is the elastic modulus of the polishing press head; k is the hardness of the polishing press head;
wherein the loading force satisfies the following relationship:
Wherein F is a loading force; is a dimensionless constant, and takes a value of 1; e is the elastic modulus of the polishing press head; m is an effective kinetic energy value generated in the polishing process; h is the material hardness of the polishing press head; q is the material toughness of the polishing press head; p is the taper of the polishing head.
2. The method for optimizing a polishing process of an indium phosphide material as recited in claim 1, further comprising the steps of:
acquiring the machining parameters of the adjusted polishing press head;
obtaining the material removal rate in a preset time based on the adjusted machining parameters of the polishing press head;
Judging whether the material removal rate is within a preset material removal rate range;
If not, a control command for replacing the polishing pressure head is sent out.
3. An optimization system for the polishing process of an indium phosphide material, the system comprising a memory and a processor, wherein the memory comprises a polishing process optimization method program for the indium phosphide material, and when the polishing process optimization method program for the indium phosphide material is executed, the following steps are realized:
collecting real-time processing conditions of the indium phosphide material in the polishing process;
Establishing a polishing evaluation model, obtaining processing drawing parameters of an indium phosphide material, and guiding the processing drawing parameters of the indium phosphide material into the polishing evaluation model for training to obtain a trained polishing evaluation model;
The real-time processing condition of the indium phosphide material in the polishing process is imported into the trained polishing evaluation model to obtain an evaluation probability value;
adjusting a processing parameter of the polishing press head based on the evaluation probability value;
The method comprises the following steps of:
acquiring image information of the contact surface of the polishing pressure head and the indium phosphide material;
establishing a real-time model diagram of the polishing pressure head based on the image information, guiding the real-time model diagram of the polishing pressure head into the trained polishing evaluation model, and calculating the taper of the polishing pressure head;
Acquiring the material characteristics of a polishing pressure head through a big data network; the material characteristics include hardness and elastic modulus of the polishing press head;
calculating an evaluation probability value based on the taper of the polishing pressure head and the material characteristic of the polishing pressure head;
the method for calculating the evaluation probability value based on the taper of the polishing pressure head and the material characteristics of the polishing pressure head specifically comprises the following steps:
According to the taper of the polishing pressure head and the material characteristics of the polishing pressure head, the loading force generated when the current polishing pressure head is contacted with the indium phosphide material is obtained;
comparing the loading force with a preset loading force to obtain an evaluation probability value; the loading force is a pressure value generated when the polishing press head is in contact with the indium phosphide material;
The method specifically comprises the following steps of:
Judging whether the evaluation probability value is larger than a preset evaluation probability value or not;
If the polishing pressure head is larger than the preset polishing pressure head, adjusting the processing parameters of the current polishing pressure head; the processing parameters comprise the rotating speed of the polishing press head and the feeding speed of the polishing press head;
The method comprises the steps of establishing a real-time model diagram of the polishing pressure head based on the image information, importing the real-time model diagram of the polishing pressure head into the trained polishing evaluation model, and calculating the taper of the polishing pressure head, and specifically comprises the following steps:
establishing a real-time model diagram of the polishing press head based on the image information;
obtaining the abrasion loss of the polishing pressure head based on the real-time model diagram of the polishing pressure head and the material characteristics of the polishing pressure head;
Establishing a wear model diagram according to the wear amount of the polishing pressure head, and obtaining a final polishing pressure head real-time model diagram based on the polishing pressure head real-time model diagram and the wear model diagram;
importing the final polishing pressure head real-time model diagram into the trained polishing evaluation model to obtain the taper of the polishing pressure head;
wherein the polishing evaluation model satisfies:
wherein P is the taper of the polishing press head, and the value is between 0 and 1; v is the original volume of the polishing press head; is the wear volume of the polishing head; e is the elastic modulus of the polishing press head; k is the hardness of the polishing press head;
wherein the loading force satisfies the following relationship:
Wherein F is a loading force; is a dimensionless constant, and takes a value of 1; e is the elastic modulus of the polishing press head; m is an effective kinetic energy value generated in the polishing process; h is the material hardness of the polishing press head; q is the material toughness of the polishing press head; p is the taper of the polishing head.
4. A computer-readable storage medium, characterized in that a polishing process optimization method program of an indium phosphide material is included in the computer-readable storage medium, which, when executed by a processor, implements the steps of the polishing process optimization method of an indium phosphide material as set forth in any one of claims 1-2.
CN202210094552.8A 2022-01-26 2022-01-26 Optimization method, system and medium for polishing process of indium phosphide material Active CN114627985B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210094552.8A CN114627985B (en) 2022-01-26 2022-01-26 Optimization method, system and medium for polishing process of indium phosphide material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210094552.8A CN114627985B (en) 2022-01-26 2022-01-26 Optimization method, system and medium for polishing process of indium phosphide material

Publications (2)

Publication Number Publication Date
CN114627985A CN114627985A (en) 2022-06-14
CN114627985B true CN114627985B (en) 2024-06-21

Family

ID=81898330

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210094552.8A Active CN114627985B (en) 2022-01-26 2022-01-26 Optimization method, system and medium for polishing process of indium phosphide material

Country Status (1)

Country Link
CN (1) CN114627985B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114800229B (en) * 2022-06-27 2022-09-13 江苏中清光伏科技有限公司 Double-surface double-glass surface polishing device and polishing method thereof
CN116690402B (en) * 2023-08-09 2023-11-14 浙江晶盛机电股份有限公司 Method and device for adjusting technological parameters of polishing machine, computer equipment and storage medium
CN117549205B (en) * 2024-01-11 2024-04-02 东晶电子金华有限公司 Quartz wafer polishing method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3934140A1 (en) * 1989-10-12 1991-04-18 Wacker Chemitronic METHOD FOR THE TRAINING OF LOCKABLE CENTERS INDUCING SURFACE TREATMENT OF SEMICONDUCTOR DISC AND THEREFORE AVAILABLE WASHER POLISHED
US6001001A (en) * 1997-06-10 1999-12-14 Texas Instruments Incorporated Apparatus and method for chemical mechanical polishing of a wafer
US6169931B1 (en) * 1998-07-29 2001-01-02 Southwest Research Institute Method and system for modeling, predicting and optimizing chemical mechanical polishing pad wear and extending pad life
US6564116B2 (en) * 2001-04-06 2003-05-13 Gou-Jen Wang Method for determining efficiently parameters in chemical-mechanical polishing (CMP)
US6910947B2 (en) * 2001-06-19 2005-06-28 Applied Materials, Inc. Control of chemical mechanical polishing pad conditioner directional velocity to improve pad life
US7024268B1 (en) * 2002-03-22 2006-04-04 Applied Materials Inc. Feedback controlled polishing processes
CN108897946B (en) * 2018-06-27 2022-04-29 西南交通大学 Material equivalent stress-strain relation prediction method based on ball and cone integrated pressure head
CN111062098B (en) * 2019-11-26 2023-09-22 天津津航技术物理研究所 Polishing pad shape design method for improving high-speed polishing surface material removal uniformity
CN112257337B (en) * 2020-10-14 2022-09-16 上海工程技术大学 Prediction method for removal rate of wafer CMP (chemical mechanical polishing) material of GMDH (Gaussian mixture distribution) neural network

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
碳化硅研抛过程中表面损伤的仿真与实验研究;谷岩等;《机械设计与制造》;20200108(第01期);第68-71页 *
磷化铟的化学机械抛光技术研究进展;孙世孔等;《半导体技术》;20180303(第03期);第201-210页 *

Also Published As

Publication number Publication date
CN114627985A (en) 2022-06-14

Similar Documents

Publication Publication Date Title
CN114627985B (en) Optimization method, system and medium for polishing process of indium phosphide material
Alkauskas et al. Role of excited states in Shockley-Read-Hall recombination in wide-band-gap semiconductors
CN107199643B (en) A kind of method of diamond wire cutting silicon rod
US8329046B2 (en) Methods for damage etch and texturing of silicon single crystal substrates
US10679842B2 (en) Semiconductor wafer, and method for polishing semiconductor wafer
US20130109156A1 (en) Indium Phosphide Substrate Manufacturing Method and Epitaxial Wafer Manufacturing Method
JP2019110348A (en) Manufacturing method of crystalline silicon substrate for solar cell, manufacturing method of crystalline silicon solar cell, and manufacturing method of crystalline silicon solar cell module
TWI677105B (en) Method of fabricating thin-film optoelectronic device and thin-film optoelectronic device obtainable by said method
EP3862134B1 (en) Method for producing indium phosphide substrate
CN105374664A (en) Preparation method of InP film composite substrate
CN116314372A (en) Solar cell, preparation method thereof and photovoltaic module
Trinh et al. Progress in and potential of liquid phase crystallized silicon solar cells
EP3862133B1 (en) Method for manufacturing indium phosphide substrate
CN1877854A (en) Compound semiconductor substrate, epitaxial substrate, processes for producing compound semiconductor substrate, and epitaxial substrate
CN114556595A (en) Semiconductor light emitting element and method for manufacturing the same
FR3055563A1 (en) METHOD OF SORTING SILICON PLATES according to their lifetime
Kim et al. Evaluation of cutting ability of electroplated diamond wire using a test system and theoretical approach
JP2018516448A (en) Epitaxial growth method of material interface between III-V material and silicon wafer canceling residual strain
CN114613705A (en) Control method, system and medium for processing semiconductor component
TWI489639B (en) Solar cell wafer, solar cell wafer manufacturing method, solar cell manufacturing method, and solar cell module manufacturing method
CN112233110A (en) Method and device for cutting chip bonding wire
CN107336090A (en) The method of saw blade secondary use
Jooss et al. Process development for MCCE textured solar cells on multicrystalline DWS wafer
JPH0992877A (en) Fabrication of light emitting semiconductor device
CN114975652A (en) Photovoltaic cell and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant