CN114594097A - Method for representing two-dimensional polariton real space characteristics - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 43
- 230000010287 polarization Effects 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000005284 excitation Effects 0.000 claims abstract description 8
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 4
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- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 4
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- 239000000758 substrate Substances 0.000 claims abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 4
- 229910016001 MoSe Inorganic materials 0.000 claims description 3
- 229910003090 WSe2 Inorganic materials 0.000 claims description 3
- 229910052961 molybdenite Inorganic materials 0.000 claims description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 3
- 230000003993 interaction Effects 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 3
- 239000000523 sample Substances 0.000 description 40
- 238000003384 imaging method Methods 0.000 description 6
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- 238000005516 engineering process Methods 0.000 description 5
- 238000012634 optical imaging Methods 0.000 description 5
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- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
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Abstract
The invention provides a method for representing two-dimensional polariton real space characteristics, which comprises the following steps: s1: placing the sample to be detected on a SiO2/Si substrate, and enabling one edge of the sample to be detected to form an angle of 45 degrees with the edge of a cantilever arm of the scattering type near-field optical microscope; s2: scanning a needle point of the scattering type near-field optical microscope along the edge vertical to a measured sample, sequentially changing the wavelength of an excitation laser light source, and obtaining a near-field real space image through scanning by the scattering type near-field optical microscope; s3: fourier transform processing is carried out on the near-field real space images obtained in the step two one by one to respectively obtain wave vector real parts k 'of the hybrid polarization mode'pAnd propagation length Lp(ii) a S4: calculating wave vector k 'of hybrid polarization excimer at each wavelength according to a formula'pAnd Lp. The invention utilizes the scattering type near-field optical microscope to break through the diffraction limit and explore the physical phenomenon of the interaction between light and substances in the near-field areaAnd presenting real space characteristics of two-dimensional polaritons.
Description
Technical Field
The invention relates to the technical field of nano optical imaging of near-field optical detection, in particular to a method for representing real space characteristics of two-dimensional polaritons formed by a heterojunction formed by van der Waals semiconductor layered materials or van der Waals semiconductor layered materials and metals with nano-scale thickness by a scattering type near-field optical microscope.
Background
Optical imaging plays an important role in modern science, however, the spatial resolution of the traditional optical imaging technology is bound by diffraction limit, the research work of optical phenomena under the nanometer scale cannot be solved, and the problem can be just solved by the near-field optical imaging technology which can break through the traditional optical diffraction limit.
The spatial resolution of near-field optical imaging is determined by the distance between the sample and the optical probe and the size of the optical probe; when the incident light wavelength is much larger than the distance between the sample and the optical probe, then the point spread function of the sample in near-field optics is completely determined by the size of the optical probe. The scanning type near-field optical microscope has two types, namely an aperture type scanning type near-field optical microscope and a scattering type scanning type near-field optical microscope, but the application of the aperture type scanning type near-field optical microscope is also limited, because the equipment leads incident laser into an optical fiber as an optical probe and approaches to a near-field area on the surface of a sample, the preparation of a needle point is very complicated, and the prepared optical probe inevitably has the problem of light leakage.
In the prior art, means for studying such physical phenomena in the near field region include electron imaging techniques, electron energy loss spectroscopy, and the like, which detect the optical local density of states (LDOS) of a sample by using energy change after interaction between electrons and substances or cathode ray fluorescence. The related prior art is as follows: (1) chinese patent CN 107655891 a, a method for characterizing van der waals crystal optical anisotropy at nanoscale thickness, published No. 2018.02.02; (2) david T, Schoen, Aa Ron L, et al, binding the electrical switching of a memrisic optical antenna by STEM EELS, Nature communications 2016; (3) raza S, Esfandyarpoor M, Koh A L, et al, Electron energy-loss spectroscopy of branched gap plasma reactors, Nature Communications, 2016. However, the prior art has some defects and shortcomings: firstly, the technologies are optical local state density of a detection mode, and the relationship between the optical state density and a polariton eigenmode is very complex and difficult to explain clearly; secondly, these techniques require the experimental conditions to be in vacuum, which increases the complexity of the equipment and the difficulty of the experiment. For example, the spectrum obtained by the electron energy loss spectrum only reflects the distribution condition of optical local state density in space, and the morphological characteristics of the hybrid polariton mode in real space are not directly presented.
Therefore, a method for simply and conveniently characterizing the two-dimensional polariton real space features is needed.
Disclosure of Invention
The invention mainly solves the technical problem that the scattering type near-field optical microscope breaks through the diffraction limit, explores the physical phenomenon of the interaction of light and substances in a near-field area and presents the real space characteristic of two-dimensional polariton.
In order to solve the above problems, the present invention provides a method for characterizing a two-dimensional polariton real space feature, comprising the following steps:
the method comprises the following steps: placing the sample to be detected on a SiO2/Si substrate, and enabling one edge of the sample to be detected to form an angle of 45 degrees with the edge of a cantilever arm of the scattering type near-field optical microscope;
step two: scanning a needle point of the scattering type near-field optical microscope along the edge vertical to a measured sample, sequentially changing the wavelength of an excitation laser light source, and obtaining a near-field real space image through scanning by the scattering type near-field optical microscope;
step three: fourier transform processing is carried out on the near-field real space images obtained in the step two one by one to respectively obtain wave vector real parts k 'of the hybrid polarization mode'pAnd propagation length Lp；
Step four: according to formula (1)
And formula (2)
Obtaining a wavevector k 'of hybrid polarization excimer at each wavelength'pAnd LpWherein, k'pFor hybridizing the real part of the polariton wave vector, lambda0Is the wavelength of the incident light source, d is the period of the interference fringes, and α is the incident light wave vector k0Angle to the sample plane, beta is incident light wave vector k0Projection k in the sample planexyAngle k with respect to the normal direction of the edge of the sample to be measured0Denotes the wave vector, k, of the incident light0＝2π/λ0，LpTo hybridize the propagation length of the polariton, W is the full width at half maximum of the fourier peak resulting from the fourier transform.
In the invention, the inventor adopts a scattering type near-field optical microscope to complete real-space imaging on the hybrid polariton and ensure the integrity and repeatability of the sample.
Furthermore, the tested sample is a van der Waals semiconductor layered material or a heterojunction of the van der Waals semiconductor layered material and metal, and the transverse size of the tested sample is less than or equal to 140 micrometers.
Furthermore, the tested sample is Van der Waals semiconductor layered material or a heterojunction of the Van der Waals semiconductor layered material and metal, and the longitudinal thickness of the tested sample is less than or equal to 4 micrometers.
Further, the van der waals semiconductor layered material is a thin film that may be WS2, WSe2, MoS2, or MoSe 2.
In a preferred embodiment of the invention, the sample tested was a heterojunction of WS2 with a single crystal silver disk with a lateral dimension of 70 microns and a longitudinal thickness of 2 microns.
The invention has the following technical effects:
the invention uses a scattering type scanning near-field optical microscope (s-SNOM) to excite the interaction between a waveguide mode and excitons in a van der Waals semiconductor layered material or the interaction between the excitons of the van der Waals semiconductor layered material and surface plasmons of metal, and carries out near-field imaging on the interactions, and further obtains a dispersion relation diagram of a measured sample by analyzing a near-field image. The method firstly overcomes the limitation of a far-field measurement means on the size of a sample, can present optical information in a near-field range of the sample, overcomes the defect of complex measurement of an electronic imaging technology, and visually represents the real space characteristics of two-dimensional polaritons.
Drawings
Embodiments of the presently disclosed subject matter will be described with reference to the accompanying drawings, in which:
FIG. 1 is a schematic diagram of the experimental measurements performed in the present invention.
FIG. 2 is a near field image obtained by scanning a light source of different excitation wavelengths using the s-SNOM in the present invention.
Fig. 3 is a dispersion relation graph of heterojunction samples under excitation light sources of different wavelengths, obtained by fourier transform of the near-field image shown in fig. 2.
Fig. 4 is a graph showing the relationship between the propagation lengths of the hybrid modes obtained by fourier transforming the near-field image shown in fig. 2.
Detailed Description
The objects and functions of the present invention and methods for accomplishing the same are explained with reference to exemplary embodiments.
The invention is further illustrated by the following examples in conjunction with the drawings.
The method of the present invention is used to characterize the spatial characteristics of a heterojunction formed by a thin film of van der waals layered semiconductor material WS2 and a single crystal silver disc. The heterojunction has a lateral dimension of 70 microns and a longitudinal thickness of 2 microns.
Referring to fig. 1 to 4, the present invention provides a method for characterizing a two-dimensional polariton real space feature, which includes the following steps:
FIG. 1 is a schematic diagram of the structure of experimental measurements in the present invention. As shown in FIG. 1, the cantilever arm of a scattering type scanning near-field optical microscope (s-SNOM) is taken as a reference, wherein alpha is an incident light wave vector k0Angle between the sample surface and beta is incident light wave vector k0Projection k in the sample planexyThe included angle between the angle alpha and the normal direction of the straight edge of the tested sample is 30 degrees, and k isxyThe included angle between the edge of the sample and the straight edge of the tested sample is beta, and the beta exists due to the different arrangement of the sample in the actual experimentOn the other hand, when λ ═ 617nm, a laser light source is irradiated on a tip of a scattering-type near-field optical microscope (s-SNOM) to excite a surface plasmon mode of a metal surface, which mode propagates in the form of a cylindrical wave on the metal surface, and is scattered at the edge of a sample and collected by an optical probe and returned to a detector. Therefore, a near-field image obtained by a scattering scanning near-field optical microscope (s-SNOM) is mainly a fringe formed by interference between a surface plasmon excited by the tip of the tip and scattered light at the edge of the sample.
Referring to fig. 1, in step one: placing a heterojunction sample to be detected on a SiO2/Si substrate, and enabling one edge of the edge of a silver disc and a cantilever arm of a scattering type scanning near-field optical microscope (s-SNOM) to form an angle of 45 degrees, namely the positive direction of x in figure 1;
referring to fig. 1 and 2, in step two: scanning the heterojunction sample by the tip of the s-SNOM along the direction vertical to the edge of the sample to be detected (namely along the positive v direction in the figure 1), and sequentially changing the wavelength of an excitation light source to obtain a near-field image;
FIG. 2 is a near field image obtained by measuring WS 2/single crystal silver disk heterojunction under different laser light source excitations by using the scattering type scanning near field optical microscope (s-SNOM), wherein the wavelengths of the exciting light source are respectively 610nm, 617nm, 620nm, 622nm, 630nm and 633 nm;
step three: respectively carrying out Fourier transform on the near-field images obtained in the step two to respectively obtain wave vector real parts k 'of hybrid polarization modes'pAnd propagation length Lp；
FIG. 3 is a graph of dispersion relationship obtained by Fourier transform of the near field image shown in step two corresponding to WS 2/single crystal silver disk heterojunction measured at different excitation wavelengths. The hybrid polarization excimer wave vector real part k 'obtained by directly reading the dispersion relation graph'p。
FIG. 4 shows Fourier transform of the near field image shown in step two, and the propagation length of the hybrid polariton in WS 2/single crystal silver disk heterojunction can be determined. The propagation length L of the hybrid polariton obtained by directly reading the propagation length mapp。
Step four: according to formula (1)
And formula (2)
Obtaining polarization excimer wave vector k 'at each wavelength'pAnd LpOf which k'pFor hybridization of real part of polariton wave vector, LpIs the propagation length of the hybrid polariton;
as can be seen from the figure: k 'can be obtained by substituting 610nm λ 1 and 3.016 μm d into equations (1) and (2)'p＝1.0613，Lp＝4.645μm；
As can be seen from the figure: k 'can be obtained by substituting λ 2 ═ 617nm, d ═ 3.034 μm, and equation (1) and equation (2)'p＝1.0409，Lp＝3.394μm；
As can be seen from the figure: k 'can be obtained by substituting equation (1) and equation (2) with λ 3 ═ 620nm and d ═ 3.063 μm'p＝1.0404，Lp＝3.394μm；
As can be seen from the figure: k 'can be obtained by substituting λ 4 ═ 622nm, d ═ 2.981 μm into equations (1) and (2)'p＝1.044，Lp＝3.845μm；
As can be seen from the figure: k 'can be obtained by substituting λ 5 ═ 630nm, d ═ 3.0568 μm into equations (1) and (2)'p＝1.0598，Lp＝9.186μm；
As can be seen from the figure: k 'can be obtained by substituting λ 6 ═ 633nm, d ═ 3.0546 μm, and equation (1) and equation (2)'p＝1.0409，Lp＝6.464μm；
In conclusion: the real-space characteristics of the hybrid polaritons in the WS 2/single crystal silver disk heterojunction in the 605nm-660nm wave band can be characterized by a scattering type scanning near-field optical microscope (s-SNOM).
The invention uses a scattering type scanning near-field optical microscope (s-SNOM) to form a hybrid polariton mode in a van der Waals semiconductor layered material, the mode interacts with an exciton of WS2 to form a hybrid polariton mode, near-field real-space imaging is carried out on the hybrid mode, and then a dispersion relation map of the measured van der Waals semiconductor layered material exciton and the surface plasmon mode is obtained by analyzing images. The method firstly overcomes the limitation of a far-field measurement means on the size of a sample, can present optical information in a near-field range of the sample, also overcomes the defect of complex measurement of an electronic imaging technology, and visually represents the real space characteristics of the two-dimensional polaritons.
Other embodiments of the present invention will readily suggest themselves to such skilled persons, and will not necessarily be described herein in connection with the above-described illustrated embodiments. The true scope and spirit of the invention are defined by the following claims.
Claims (6)
1. A method for characterizing two-dimensional polariton real space features is characterized by comprising the following steps:
s1: placing the sample to be detected on a SiO2/Si substrate, and enabling one edge of the sample to be detected to form an angle of 45 degrees with the edge of a cantilever arm of the scattering type near-field optical microscope;
s2: scanning a needle point of the scattering type near-field optical microscope along the edge vertical to a measured sample, sequentially changing the wavelength of an excitation laser light source, and obtaining a near-field real space image through scanning by the scattering type near-field optical microscope;
s3: fourier transform processing is carried out on the near-field real space images obtained in the step two one by one to respectively obtain wave vector real parts k 'of the hybrid polarization mode'pAnd propagation length Lp；
S4: according to formula (1)
And formula (2)
Obtaining wave vector k 'of hybrid polarization excimer at each wavelength'pAnd LpWherein, k'pFor hybridizing the real part of the polariton wave vector, lambda0Is the wavelength of the incident light source, d is the period of the interference fringes, and α is the incident light wave vector k0The angle between the sample and the plane of the sample,beta is incident light wave vector k0Projection k in the sample planexyAngle k with respect to the normal direction of the edge of the sample to be measured0Denotes the wave vector, k, of the incident light0＝2π/λ0，LpTo hybridize the propagation length of the polariton, W is the full width at half maximum of the fourier peak resulting from the fourier transform.
2. The method of characterizing two-dimensional polariton real space features of claim 1, wherein the sample under test is van der waals semiconductor layered material or a heterojunction of van der waals semiconductor layered material and metal with lateral dimension ≤ 140 μm.
3. The method for characterizing two-dimensional polariton real space features according to claim 1 or 2, wherein the sample to be tested is a van der waals semiconductor layered material or a hetero-junction of van der waals semiconductor layered material and metal, and the longitudinal thickness of the sample is less than or equal to 4 micrometers.
4. The method of characterizing two-dimensional polatographic real space features of claim 2, wherein the van der waals semiconductor layered material is a thin film of WS2, WSe2, MoS2, or MoSe 2.
5. A method of characterizing two-dimensional polatographic real space features as claimed in claim 3 wherein said van der waals semiconductor layered material is a thin film of WS2, WSe2, MoS2 or MoSe 2.
6. The method of characterizing two-dimensional poled excimer real space features of claim 1, wherein the sample under test is a heterojunction of WS2 with a single crystal silver disk with a lateral dimension of 70 microns and a longitudinal thickness of 2 microns.
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|---|---|---|---|---|
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|---|---|---|---|---|
| US6408123B1 (en) * | 1999-11-11 | 2002-06-18 | Canon Kabushiki Kaisha | Near-field optical probe having surface plasmon polariton waveguide and method of preparing the same as well as microscope, recording/regeneration apparatus and micro-fabrication apparatus using the same |
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| Title |
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| 段嘉华 等: "二维极化激元学近场研究进展", 《物理学报》, vol. 68, no. 11, 30 November 2019 (2019-11-30), pages 110701 - 1 * |
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