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CN114507527A - ITO etching solution and preparation method and application method thereof - Google Patents

ITO etching solution and preparation method and application method thereof Download PDF

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Publication number
CN114507527A
CN114507527A CN202111517991.7A CN202111517991A CN114507527A CN 114507527 A CN114507527 A CN 114507527A CN 202111517991 A CN202111517991 A CN 202111517991A CN 114507527 A CN114507527 A CN 114507527A
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Prior art keywords
parts
etching solution
ito
surfactant
etching
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CN202111517991.7A
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Inventor
王维
潘春林
李自杰
林秋玉
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Fujian Zhong'an High Tech Materials Research Institute Co ltd
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Fujian Zhong'an High Tech Materials Research Institute Co ltd
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Priority to CN202111517991.7A priority Critical patent/CN114507527A/en
Publication of CN114507527A publication Critical patent/CN114507527A/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Weting (AREA)

Abstract

The application provides an ITO etching solution, and a preparation method and an application method thereof. The ITO etching solution comprises the following components in parts by weight: 2-10 parts of oxalic acid, 0.01-3 parts of surfactant, 0.01-3 parts of dispersant and water; wherein the surfactant comprises at least one of polyoxyethylene alkyl diamine and polyoxyethylene alkyl amine; the dispersing agent comprises at least one of diglycolamine and polyethylene glycol mono-octyl phenyl ether. The ITO etching solution has good permeability, is not easy to foam, has strong controllability, smooth etching angle and high precision, can finish the etching of the material in a short time, the loss of the critical dimension of the etched material is less than 1.0 mu m, the etching angle is less than 70 degrees, and ITO residues are hardly left in the area without the protection of the photoresist on the etched substrate.

Description

ITO etching solution and preparation method and application method thereof
Technical Field
The application relates to the technical field of chemical etching, in particular to an ITO etching solution and a preparation method and an application method thereof.
Background
Currently, the substrate surface of an electronic device (e.g., an array substrate of a display device) is usually provided with a patterned ITO film for subsequent controlled energization of the electronic device. The ITO film is typically formed by etching a layer of ITO material by chemical etching. Wherein the etching solution mainly comprises sulfuric acid series, aqua regia series and oxalic acid series ITO etching solution. However, because the characteristics of ITO materials of different crystal forms are slightly different, only the oxalic acid ITO etching solution can etch alpha-ITO (i.e., amorphous ITO), and after the oxalic acid reacts with ITO, insoluble tin oxalate and indium oxalate can be generated, and a large amount of precipitates can affect the etching rate, the etching precision and the etching cleanliness of the etching solution.
Disclosure of Invention
In view of the above, the application provides an ITO etchant, and a preparation method and an application method thereof, wherein the etchant has stable performance, strong permeability, and high etching precision and etching cleanliness.
Specifically, the first aspect of the application provides an ITO etching solution, which comprises the following components in parts by weight: 2-10 parts of oxalic acid, 0.01-3 parts of surfactant, 0.01-3 parts of dispersant and water; wherein the surfactant comprises at least one of polyoxyethylene alkyl diamine and polyoxyethylene alkyl amine; the dispersing agent comprises at least one of diglycolamine and polyethylene glycol mono-octyl phenyl ether.
The oxalic acid aqueous solution can dissolve tin oxide and indium oxide in ITO to form Sn4+、In3+However, these two ions react with oxalate in the system rapidly to form Sn (COO) which is hardly soluble2、In2(COO)3. As the etching reaction proceeds, the two substances tend to aggregate to form a large amount of precipitates, and even form oxalate crystals, which affect the performance of the etchant and adhere to the surface of the substrate to cause film contamination. According to the method, at least one of specific surfactant-polyoxyethylene alkyl diamine and polyoxyethylene alkylamine is added on the basis of oxalic acid, the two substances are macromolecular long-chain nonmetal salts which have certain steric hindrance effect and can cooperate with a dispersant in a system to effectively inhibit Sn (COO) in the system2、In2(COO)3The aggregation and precipitation can further ensure the exertion of the performance of the etching solution and the etching precision. Furthermore, polyoxyethylene alkylamines have both two alkyl hydrophobic chains or two polyoxyethylene hydrophilic chains, while polyoxyethylene alkyldiamines have two hydrophobic chains and three hydrophilic chains, and therefore, thisThe two surfactants can remarkably accelerate the infiltration speed of the etching solution on the ITO material, and can remarkably improve the infiltration capacity and the cleaning capacity of the etching solution, thereby improving the etching rate and the etching cleanliness.
In the application, the ITO etching solution contains 2-10 parts of oxalic acid. Illustratively, the parts by weight of oxalic acid may be 2 parts, 3 parts, 4 parts, 5 parts, 6 parts, 7 parts, 8 parts, 9 parts, 10 parts.
In the application, the ITO etching solution contains 0.01-3 parts of surfactant. Illustratively, the weight parts of the surfactant may be 0.01 parts, 0.03 parts, 0.05 parts, 0.06 parts, 0.07 parts, 0.08 parts, 0.1 parts, 0.15 parts, 0.2 parts, 0.25 parts, 0.3 parts, 0.5 parts, 1 part, 1.5 parts, 2 parts, 2.5 parts, 3 parts.
In the application, the ITO etching solution contains 0.01-3 parts of dispersing agent. Illustratively, the weight parts of the dispersant may be 0.01 parts, 0.03 parts, 0.05 parts, 0.06 parts, 0.07 parts, 0.08 parts, 0.1 parts, 0.15 parts, 0.2 parts, 0.25 parts, 0.3 parts, 0.5 parts, 1 part, 1.5 parts, 2 parts, 2.5 parts, 3 parts.
In an embodiment of the present invention, the surfactant further includes at least one of cetyltrimethylammonium bromide and dodecyldimethylbenzylammonium chloride. The cetyl trimethyl ammonium bromide can increase the hydrophilic and antistatic performance of the etching solution and can improve the stability of the etching solution. The dodecyl dimethyl benzyl ammonium chloride has certain corrosion inhibition capacity on the basis of antistatic performance, and can avoid secondary corrosion of the etching solution to the metal film layer to a certain extent under the condition that the metal film layer still exists on the substrate.
In particular, polyoxyethylene alkyl diamine and polyoxyethylene alkylamine have both partial characteristics of a nonionic surfactant and a cationic surfactant, and have an organic amine structure, which can be stably dissolved in an acid solution. The non-ionic property of the surfactant is enhanced along with the increase of the number of oxyethylene groups (EO), and the surfactant can be mutually dissolved with an anionic surfactant (such as polyoxyethylene ether fatty alcohol sulfate) in any proportion, so that the performance of the surfactant is further improved. Thus, in other embodiments, the surfactant comprises at least one of a polyoxyethylene alkyl diamine, a polyoxyethylene alkyl amine, and a polyoxyethylene ether fatty alcohol sulfate.
In the embodiment of the application, the ITO etching solution further includes a metal chelating agent, and the metal chelating agent includes at least one of ethylenediaminetetraacetic acid, citric acid, and tartaric acid. During the etching process, the metal chelating agent can chelate free Sn in the system4+And the formation of tin oxalate precipitates is hindered to some extent.
In the embodiment of the present application, the ITO etching solution further includes an inorganic chloride, and the chloride includes at least one of ferric chloride, potassium chloride, and ammonium chloride. The introduction of a proper amount of inorganic chloride can improve the cleaning capability of the etching solution, namely, is beneficial to removing reaction products on the surface of the substrate.
In the embodiment of the application, the etching solution comprises the following components in parts by weight: 3-6 parts of oxalic acid, 0.01-1 part of surfactant, 0.01-1 part of dispersant and water. Illustratively, the oxalic acid may be present in 3.2 parts, 3.3 parts, 3.4 parts, 3.5 parts, 4 parts, 5 parts, 6 parts by weight. For example, the surfactant may be present in an amount of 0.015 parts, 0.025 parts, 0.035 parts, 0.04 parts, 0.045 parts, 0.055 parts, 0.065 parts, 0.075 parts, 0.085 parts, 0.09 parts, 0.095 parts by weight. Illustratively, the weight parts of the dispersant may be 0.015 parts, 0.025 parts, 0.035 parts, 0.04 parts, 0.045 parts, 0.055 parts, 0.065 parts, 0.075 parts, 0.085 parts, 0.09 parts, 0.095 parts. The content of each component is in the range, so that the etching rate and the etching precision of the whole etching solution are improved.
In the embodiment of the application, the pH value of the ITO etching solution is 1-3. The proper pH value can ensure the good stability and etching effect of the etching solution.
The second aspect of the present application provides a method for preparing an etching solution, comprising the following steps:
mixing oxalic acid, a surfactant, a dispersant and water in proportion to obtain an etching solution; the etching solution comprises the following components in parts by weight: 2-10 parts of oxalic acid, 0.01-3 parts of surfactant, 0.01-3 parts of dispersant and water; wherein the surfactant comprises at least one of polyoxyethylene alkylamine and polyoxyethylene alkyl diamine; the dispersing agent comprises at least one of diglycolamine and polyethylene glycol mono-octyl phenyl ether. The preparation method can obtain the etching solution only by mixing the raw materials, has simple process and high production efficiency, and is suitable for large-scale industrial production.
The third aspect of the application provides an application method of an ITO etching solution, which comprises the following steps:
the etching solution provided by the first aspect of the present application or the etching solution prepared by the preparation method provided by the second aspect of the present application is contacted with a substrate with an ITO film on the surface, so as to etch the ITO film.
The treatment method is simple to operate and suitable for large-scale industrial production.
In the embodiment of the present application, the contacting includes immersing the substrate provided with the ITO film in an etching solution, or spraying/rinsing the etching solution on the substrate provided with the ITO film. In the case of using the spray/rinse, a sample to be etched (a substrate provided with an ITO film) is placed on a conveyor belt, and the etching time and etching rate of ITO can be adjusted by controlling the speed of the conveyor belt. In the present application, the speed of the conveyor belt is generally limited to 0.5m/s to 1 m/s. The etching time and the etching speed can also be adjusted according to the spraying or leaching pressure, and the spraying or leaching pressure is generally limited to be 0.5MPa-1.5MPa in the application. Can be selected according to the actual production condition.
In the embodiment of the application, the etching time is 120-150 s, and the etching temperature is 35-45 ℃. Suitable temperatures and times can improve the cleanliness of the etch.
In some embodiments of the present application, an Open Collector (OC) hole is formed in a surface of the substrate, wherein the OC hole has a diameter of 200nm to 1800 nm. After the ITO etching solution and the application method thereof provided by the application are adopted to treat the substrate provided with the ITO film, no ITO residues are left in the OC hole.
The ITO etching solution provided by the application has the advantages of good permeability, difficulty in foaming, strong controllability, smooth etching angle, high precision and high cleanliness of an etched substrate, the loss of the critical dimension of an etched material is less than 1.0 mu m, and the etching angle is less than 70 degrees.
Drawings
FIG. 1 is a schematic structural diagram of an ITO substrate used in an embodiment of the present application;
fig. 2 is a Scanning Electron Microscope (SEM) photograph of a substrate sample S1 etched according to example 1 of the present application;
FIG. 3 is a SEM image of a cross-section of a local area of a substrate sample S5 etched according to example 5 of the present application;
FIG. 4 is a SEM image of a cross-section of a local area of a substrate sample S7 etched according to example 7 of the present application;
fig. 5 is a sectional SEM photograph of a local area of a substrate sample S8 etched according to example 8 of the present application.
Detailed Description
The technical solution of the present application is described in detail below with reference to a number of examples.
Example 1
The ITO etching solution comprises the following components in parts by weight: 2 parts of oxalic acid, 0.01 part of surfactant, 0.01 part of dispersant and water; wherein the surfactant is a mixture of polyoxyethylene alkyl diamine and polyoxyethylene alkylamine, and the dispersant is a mixture of diglycolamine and polyethylene glycol mono-octyl phenyl ether.
And soaking the substrate sample in the etching solution for 130s at 40 ℃. The structure of the substrate sample is shown in fig. 1, an electrode layer 20 and a passivation layer 30 are sequentially disposed on a glass substrate 10 of the substrate sample, the passivation layer is covered with a buffer layer 40, an OC hole (the aperture of the OC hole is 200nm-1800nm) is preset in the buffer layer, the surface of the OC hole is covered with an ITO film layer 50, and a patterned photoresist layer 60 is disposed in a partial region of the substrate surface. The ITO etching solution is used for etching the ITO film layer which is not covered by the photoresist layer 60. The substrate sample after etching was designated as S1.
Example 2
The differences from example 1 are: the ITO etching solution comprises the following components in parts by weight: 10 parts of oxalic acid, 3 parts of surfactant, 3 parts of dispersant and water; wherein the surfactant is a mixture of polyoxyethylene alkyl diamine and polyoxyethylene alkylamine, and the dispersant is a mixture of diglycolamine and polyethylene glycol mono-octyl phenyl ether. The substrate sample after etching was designated as S2.
Example 3
The differences from example 1 are: the ITO etching solution comprises the following components in parts by weight: 6 parts of oxalic acid, 1 part of surfactant, 1 part of dispersant and water; wherein the surfactant is a mixture of polyoxyethylene alkyl diamine and polyoxyethylene alkylamine, and the dispersant is a mixture of diglycolamine and polyethylene glycol mono-octyl phenyl ether. The substrate sample after etching was designated as S3.
Example 4
The differences from example 1 are: the ITO etching solution comprises the following components in parts by weight: 4 parts of oxalic acid, 0.05 part of surfactant, 0.05 part of dispersant and water. The substrate sample after etching was designated as S4.
Example 5
The differences from example 4 are: the surfactant is a mixture of dodecyl dimethyl benzyl ammonium chloride, hexadecyl trimethyl ammonium bromide, polyoxyethylene alkyl diamine and polyoxyethylene alkylamine. The substrate sample after etching was designated as S5.
Example 6
The differences from example 4 are: the ITO etching solution also contains citric acid. The substrate sample after etching is designated as S6.
Example 7
The differences from example 4 are: the ITO etching solution also contains potassium chloride. The substrate sample after etching is designated as S7.
Example 8:
the differences from example 4 are: the ITO etching solution also contains citric acid and potassium chloride. The substrate sample after etching was designated as S8.
In order to highlight the beneficial effects brought by the technical scheme of the embodiment of the application, the following comparative examples are set.
Comparative example 1
The differences from example 1 are: and the detergent does not contain a surfactant and a dispersant. The substrate sample after etching was designated as DS 1.
SEM test is performed on the substrate samples prepared in the above examples and comparative examples, and SEM photographs of the samples prepared in some examples can be seen in FIGS. 2 to 5. Fig. 2 is an SEM photograph of the whole substrate after etching, and it can be seen that the structure of the substrate after etching is clear, which indicates that the preparation of the predetermined pattern on the substrate can be well completed by using the ITO etchant provided by the present application. In addition, critical dimension loss and etch angle of the post-etch ITIO film layer can be measured from cross-sectional SEM photographs of each substrate sample after etching. The test results of the examples and comparative examples are summarized in table 1.
TABLE 1 test results of samples etched for each of examples and comparative examples
Sample numbering Loss of critical dimension/μm Etching angle/° c Substrate remaining condition
S1 0.953 65.87 Has no residue
S2 0.962 63.26 Has no residue
S3 0.933 64.44 Has no residue
S4 0.952 45.00 Has no residue
S5 0.635 54.16 Has no residue
S6 0.754 54.46 Has no residue
S7 0.814 48.18 Has no residue
S8 0.397 52.59 Has no residue
DS1 1.374 73.35 Has more residue
As can be seen from the data in Table 1, samples S1-S8 prepared in the examples of the present application have smaller critical dimension loss and etching angle (critical dimension loss less than 1.0 μm, etching angle less than 70 °) of the residual ITO film (under the photoresist layer) after etching and high etching cleanliness, compared to sample DS1 prepared in the comparative example. In addition, the metal chelating agent and the chloride are also added into the etching solution of the embodiment 8, and the result shows that the improvement of the performance of the etching solution is more obvious.
Therefore, the etching solution provided by the application has the advantages of strong controllability, smooth etching angle and high precision, the critical dimension loss of the etched ITO material is less than 1.0 mu m, the etching angle is less than 70 degrees, and no ITO residue exists in the area without the protection of the photoresist on the etched substrate.
The foregoing is illustrative of the present application and it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the application and are intended to be within the scope of the application.

Claims (9)

1. The ITO etching solution is characterized by comprising the following components in parts by weight: 2-10 parts of oxalic acid, 0.01-3 parts of surfactant, 0.01-3 parts of dispersant and water; wherein the surfactant comprises at least one of polyoxyethylene alkyl diamine and polyoxyethylene alkyl amine; the dispersing agent comprises at least one of diglycolamine and polyethylene glycol mono-octyl phenyl ether.
2. The ITO etchant of claim 1, wherein the surfactant further comprises at least one of dodecyl dimethyl benzyl ammonium chloride and hexadecyl trimethyl ammonium bromide.
3. The ITO etching solution of claim 1, further comprising a metal chelating agent, wherein the metal chelating agent comprises at least one of ethylenediaminetetraacetic acid, citric acid, and tartaric acid.
4. The ITO etching solution of claim 1, further comprising an inorganic chloride, wherein the inorganic chloride comprises at least one of ferric chloride, potassium chloride, and ammonium chloride.
5. The ITO etching solution of claim 1, wherein the etching solution comprises the following components in parts by weight: 3-6 parts of oxalic acid, 0.01-1 part of surfactant, 0.01-1 part of dispersant and water.
6. The ITO etching solution of any one of claims 1 to 5, wherein the pH of the ITO etching solution is 1 to 3.
7. The preparation method of the ITO etching solution is characterized by comprising the following steps of:
mixing oxalic acid, a surfactant, a dispersant and water in proportion to obtain an ITO etching solution; the ITO etching solution comprises the following components in parts by weight: 2-10 parts of oxalic acid, 0.01-3 parts of surfactant, 0.01-3 parts of dispersant and water; wherein the surfactant comprises at least one of polyoxyethylene alkyl diamine and polyoxyethylene alkyl amine; the dispersing agent comprises at least one of diglycolamine and polyethylene glycol mono-octyl phenyl ether.
8. An application method of an ITO etching solution is characterized by comprising the following steps:
the ITO etching solution according to any one of claims 1 to 6 or the ITO etching solution prepared by the preparation method according to claim 7 is brought into contact with a substrate having an ITO film provided on the surface thereof to etch the ITO film.
9. The method of use according to claim 8, wherein the etching time is 120s to 150s and the etching temperature is 35 ℃ to 45 ℃.
CN202111517991.7A 2021-12-13 2021-12-13 ITO etching solution and preparation method and application method thereof Pending CN114507527A (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN116179205A (en) * 2023-01-30 2023-05-30 昆山晶科微电子材料有限公司 Etching liquid of ITO for semiconductor and preparation method thereof

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JP2007214190A (en) * 2006-02-07 2007-08-23 Nagase Chemtex Corp Etchant composition
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JP2010103214A (en) * 2008-10-22 2010-05-06 Hayashi Junyaku Kogyo Kk Composition of etching liquid for conductor film
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CN104560351A (en) * 2014-12-30 2015-04-29 芜湖市润雨精密机械有限公司 Low-foam descaling type water-based cutting fluid and preparation method thereof
CN104861980A (en) * 2015-04-10 2015-08-26 深圳新宙邦科技股份有限公司 Etching solution used in ITO/Ag/ITO multilayer film
CN109233837A (en) * 2018-10-29 2019-01-18 苏州博洋化学股份有限公司 The novel oxalic acid system ITO etching solution of Display panel array process

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Publication number Priority date Publication date Assignee Title
JPH0527461A (en) * 1991-07-19 1993-02-05 Konica Corp Etching liquid for electrophotographic printing plate
JPH07141932A (en) * 1993-11-18 1995-06-02 Kanto Chem Co Inc Etching liquid composition for transparent conductive film
CN1900146A (en) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 Chemical and mechanical polishing liquid
JP2007214190A (en) * 2006-02-07 2007-08-23 Nagase Chemtex Corp Etchant composition
JP2010103214A (en) * 2008-10-22 2010-05-06 Hayashi Junyaku Kogyo Kk Composition of etching liquid for conductor film
CN101519593A (en) * 2009-04-01 2009-09-02 苏州瑞晶化学有限公司 Wet etching solution for transparent conductive film and manufacture method thereof
CN104388090A (en) * 2014-10-21 2015-03-04 深圳新宙邦科技股份有限公司 Oxalic acid-series ITO (Indium Tin Oxide) etching liquid, as well as preparation method and application thereof
CN104560351A (en) * 2014-12-30 2015-04-29 芜湖市润雨精密机械有限公司 Low-foam descaling type water-based cutting fluid and preparation method thereof
CN104861980A (en) * 2015-04-10 2015-08-26 深圳新宙邦科技股份有限公司 Etching solution used in ITO/Ag/ITO multilayer film
CN109233837A (en) * 2018-10-29 2019-01-18 苏州博洋化学股份有限公司 The novel oxalic acid system ITO etching solution of Display panel array process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116179205A (en) * 2023-01-30 2023-05-30 昆山晶科微电子材料有限公司 Etching liquid of ITO for semiconductor and preparation method thereof

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