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CN114497330B - A TO UV device packaging structure - Google Patents

A TO UV device packaging structure Download PDF

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CN114497330B
CN114497330B CN202210400938.7A CN202210400938A CN114497330B CN 114497330 B CN114497330 B CN 114497330B CN 202210400938 A CN202210400938 A CN 202210400938A CN 114497330 B CN114497330 B CN 114497330B
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pad
ceramic module
chip
pads
metal
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CN114497330A (en
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闫志超
黄小辉
刘建青
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Zhixin Semiconductor Hangzhou Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/93Interconnections
    • H10F77/933Interconnections for devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

本发明公开了一种TO紫外器件封装结构,涉及半导体封装技术领域,陶瓷模块安装在底座上,正面焊盘和底端焊盘分别安装于陶瓷模块的上下端面,多个侧面焊盘围绕陶瓷模块的外侧壁安装,不同的侧面焊盘能够与正面焊盘对应的不同部位导通,深紫外发射芯片安装于正面焊盘上,多个探测芯片分别安装于各侧面焊盘上,多个电极柱依次穿过底座、底端焊盘和陶瓷模块,并与正面焊盘的不同部位导通,正面焊盘的不同部位还能够分别导通深紫外发射芯片和通过侧面焊盘导通探测芯片,并使探测芯片能够接收到深紫外发射芯片发出的信号。该TO紫外器件封装结构能够达到单一器件同时具有深紫外发射与360度接收的光通信技术要求。

Figure 202210400938

The invention discloses a TO UV device packaging structure, which relates to the technical field of semiconductor packaging. A ceramic module is mounted on a base, a front pad and a bottom pad are respectively mounted on the upper and lower end faces of the ceramic module, and a plurality of side pads surround the ceramic module. It is installed on the outer side wall of the device, and different side pads can be connected to different parts corresponding to the front pads. It passes through the base, the bottom pad and the ceramic module in sequence, and conducts with different parts of the front pad. Different parts of the front pad can also conduct the deep ultraviolet emitting chip and the detection chip through the side pad respectively. The detection chip can receive the signal sent by the deep ultraviolet emission chip. The TO UV device packaging structure can meet the optical communication technical requirements that a single device has both deep UV emission and 360-degree reception.

Figure 202210400938

Description

一种TO紫外器件封装结构A TO UV device packaging structure

技术领域technical field

本发明涉及半导体封装技术领域,具体是涉及一种TO紫外器件封装结构。The invention relates to the technical field of semiconductor packaging, in particular to a packaging structure of a TO ultraviolet device.

背景技术Background technique

深紫外发光二极管(UVC LED)具有可靠性高、寿命长、反应快、功耗低、环保无污染和体型小等优势,被广泛应用于紫外光通信、杀菌消毒等领域。其紫外光通信具有灵活、低窃听、全方位和非视距通信的独特优势,紫外线光子主要应用于短距离的、高保密性等重要通信领域,深紫外光子在大气中的散射作用使紫外光的能量传输方向发生改变,这也为紫外光通信奠定了通信基础。但目前深紫外发光二极管发射器件与深紫外信号接收器件为分开器件设计,单一深紫外信号接收器件接收信号角度为180度,无法实现360度深紫外信号接收。Deep ultraviolet light-emitting diodes (UVC LEDs) have the advantages of high reliability, long life, fast response, low power consumption, environmental protection, no pollution and small size, and are widely used in ultraviolet light communication, sterilization and other fields. Its ultraviolet light communication has the unique advantages of flexibility, low eavesdropping, omnidirectional and non-line-of-sight communication. Ultraviolet photons are mainly used in important communication fields such as short distance and high confidentiality. The scattering effect of deep ultraviolet photons in the atmosphere makes ultraviolet light The direction of energy transmission has changed, which also laid the communication foundation for ultraviolet light communication. However, at present, the deep ultraviolet light emitting diode emitting device and the deep ultraviolet signal receiving device are designed as separate devices, and the single deep ultraviolet signal receiving device receives the signal at an angle of 180 degrees, which cannot achieve 360 degree deep ultraviolet signal reception.

发明内容SUMMARY OF THE INVENTION

本发明的目的是提供一种TO紫外器件封装结构,以解决上述现有技术存在的问题,达到单一器件同时具有深紫外发射与360度接收的光通信技术要求。The purpose of the present invention is to provide a TO UV device packaging structure, so as to solve the problems existing in the above-mentioned prior art, and achieve the optical communication technical requirement that a single device has both deep UV emission and 360-degree reception.

为实现上述目的,本发明提供了如下方案:For achieving the above object, the present invention provides the following scheme:

本发明提供了一种TO紫外器件封装结构,包括底座、陶瓷模块、底端焊盘、正面焊盘、侧面焊盘、深紫外发射芯片、探测芯片、顶端透镜和电极柱,所述陶瓷模块安装在所述底座上,且所述正面焊盘和所述底端焊盘分别安装于所述陶瓷模块的上端面和下端面,所述侧面焊盘为多个且围绕所述陶瓷模块的外侧壁安装,不同的所述侧面焊盘能够与所述正面焊盘对应的不同部位导通,所述深紫外发射芯片安装于所述正面焊盘上,所述探测芯片为多个,且分别安装于各所述侧面焊盘上,所述电极柱为多个,且均依次穿过所述底座、所述底端焊盘和所述陶瓷模块,并与所述正面焊盘的不同部位导通,所述正面焊盘的不同部位还能够分别导通所述深紫外发射芯片和通过所述侧面焊盘导通所述探测芯片,并使所述探测芯片能够接收到所述深紫外发射芯片发出的信号,所述顶端透镜位于所述深紫外发射芯片的上方。The invention provides a TO UV device packaging structure, comprising a base, a ceramic module, a bottom pad, a front pad, a side pad, a deep UV emission chip, a detection chip, a top lens and an electrode post. The ceramic module is installed On the base, the front-side pads and the bottom-side pads are respectively mounted on the upper end face and the lower end face of the ceramic module, and the side pads are multiple and surround the outer sidewall of the ceramic module Installation, the different side pads can be connected to different parts corresponding to the front pads, the deep ultraviolet emission chip is installed on the front pad, the detection chips are multiple, and they are respectively installed in On each of the side pads, there are a plurality of the electrode posts, and all of them pass through the base, the bottom pad and the ceramic module in sequence, and are connected to different parts of the front pad, Different parts of the front pad can also conduct the deep ultraviolet emitting chip and the detection chip through the side pad respectively, so that the detection chip can receive the light emitted by the deep ultraviolet emitting chip. signal, the top lens is located above the deep ultraviolet emitting chip.

优选地,所述正面焊盘包括第一正面焊盘、第二正面焊盘、第三正面焊盘和第四正面焊盘,且所述深紫外发射芯片安装于所述第一正面焊盘和所述第二正面焊盘的上端面,所述第三正面焊盘和所述第四正面焊盘能够通过所述侧面焊盘与所述探测芯片导通。Preferably, the front-side pads include a first front-side pad, a second front-side pad, a third front-side pad and a fourth front-side pad, and the deep ultraviolet emitting chip is mounted on the first front-side pad and the fourth front-side pad. The upper end surface of the second front-side pad, the third front-side pad and the fourth front-side pad can be connected to the probe chip through the side pad.

优选地,所述底座的底端外缘设有环形台阶,且所述底座上开设有多个第一通孔,所述底端焊盘上对应各所述第一通孔的位置开设有第二通孔,所述第一通孔和所述第二通孔均用于所述电极柱的通过。Preferably, the outer edge of the bottom end of the base is provided with an annular step, the base is provided with a plurality of first through holes, and the bottom end pad is provided with a first through hole at a position corresponding to each of the first through holes. Two through holes, the first through hole and the second through hole are both used for the passage of the electrode column.

优选地,所述第二通孔的内径大于所述第一通孔的内径。Preferably, the inner diameter of the second through hole is larger than the inner diameter of the first through hole.

优选地,各所述第一通孔内均安装有一绝缘套,所述绝缘套的两端开口,且一个所述绝缘套内部同轴安装一个所述电极柱。Preferably, an insulating sleeve is installed in each of the first through holes, both ends of the insulating sleeve are open, and one of the electrode posts is coaxially installed inside one of the insulating sleeves.

优选地,还包括一环形透镜,所述环形透镜套设于所述底座和所述陶瓷模块外周,且所述环形透镜的下端与所述环形台阶的上端面接触,所述环形透镜的上端与所述顶端透镜的下端固定,所述环形透镜位于各所述探测芯片的外部。Preferably, it also includes an annular lens, the annular lens is sleeved on the base and the outer periphery of the ceramic module, the lower end of the annular lens is in contact with the upper end surface of the annular step, and the upper end of the annular lens is in contact with the upper end surface of the annular step. The lower end of the top lens is fixed, and the annular lens is located outside each of the detection chips.

优选地,还包括一管帽,所述管帽套设于所述环形透镜外周,且所述管帽的下端与所述环形台阶的上端面接触,且所述管帽下端的外缘与所述环形台阶的外缘平齐,所述管帽的上端高于所述顶端透镜下端的环形边缘,且低于所述顶端透镜的上端,所述管帽上对应各所述侧面焊盘的位置均开设有光出口。Preferably, a tube cap is also included, the tube cap is sleeved on the outer circumference of the annular lens, the lower end of the tube cap is in contact with the upper end surface of the annular step, and the outer edge of the lower end of the tube cap is in contact with the The outer edge of the annular step is flush, the upper end of the cap is higher than the annular edge of the lower end of the top lens, and lower than the upper end of the top lens, and the cap corresponds to the position of each of the side pads All have light exits.

优选地,所述陶瓷模块的侧壁设有四个平面结构,且所述平面结构围绕所述陶瓷模块的侧壁均匀设置,相邻的所述平面结构之间不接触,一个所述平面结构上对应安装一个所述侧面焊盘,且所述侧面焊盘分为第一侧面焊盘和第二侧面焊盘;所述陶瓷模块上设有多个第三通孔,所述第三通孔用于所述电极柱的通过;还包括第一金属柱和第二金属柱,且所述第一金属柱和所述第二金属柱分别固定在不同的所述平面结构上,所述第一金属柱能够通过所述第一侧面焊盘导通所述侧面焊盘的下层线路和所述第四正面焊盘,所述第二金属柱能够通过所述第二侧面焊盘导通所述侧面焊盘的上层线路和所述第三正面焊盘。Preferably, the side wall of the ceramic module is provided with four plane structures, and the plane structures are evenly arranged around the side wall of the ceramic module, and the adjacent plane structures do not contact each other, and one plane structure A corresponding side pad is installed on the side pad, and the side pad is divided into a first side pad and a second side pad; the ceramic module is provided with a plurality of third through holes, and the third through holes It is used for the passage of the electrode column; it also includes a first metal column and a second metal column, and the first metal column and the second metal column are respectively fixed on the different plane structures, and the first metal column and the second metal column are respectively fixed on the different plane structures. The metal post can conduct the lower layer circuit of the side pad and the fourth front pad through the first side pad, and the second metal post can conduct the side surface through the second side pad the upper-layer wiring of the pad and the third front-side pad.

优选地,所述陶瓷模块的上端面对应所述第一金属柱和所述第二金属柱的位置还开设有正面通孔槽,且两个所述正面通孔槽能够分别与所述第一金属柱和所述第二金属柱导通,各所述平面结构上均开设有侧面通孔,且所述侧面通孔内部能够电镀铜金属,并通过电镀铜金属导通所述金属柱和所述侧面焊盘。Preferably, the upper end surface of the ceramic module is further provided with front through-hole slots corresponding to the positions of the first metal pillar and the second metal pillar, and the two front through-hole slots can be respectively connected with the first metal pillar and the second metal pillar. A metal column is connected to the second metal column, each of the planar structures is provided with side through holes, and the inside of the side through holes can be electroplated with copper metal, and the metal column and the metal column are connected by electroplating copper metal. the side pads.

优选地,各所述探测芯片的正极和正极对应、负极和负极对应。Preferably, the positive electrodes of the detection chips correspond to the positive electrodes, and the negative electrodes correspond to the negative electrodes.

本发明相对于现有技术取得了以下技术效果:The present invention has achieved the following technical effects with respect to the prior art:

本发明提供的TO紫外器件封装结构,正面焊盘和底端焊盘分别安装于陶瓷模块的上端面和下端面,侧面焊盘为多个且围绕陶瓷模块的外侧壁安装,不同的侧面焊盘能够与正面焊盘对应的不同部位导通,进而便于实现对安装于正面焊盘上的深紫外发射芯片和安装于各侧面焊盘上端的探测芯片进行电路导通,正面焊盘的不同部位还能够分别导通深紫外发射芯片和通过侧面焊盘导通探测芯片,并使探测芯片能够接收到深紫外发射芯片发出的信号,同时周向设置的侧面焊盘和探测芯片,能够实现单一TO器件正面发射深紫外光子信号,侧面接收来自360°的深紫外光子信号,达到TO紫外器件集发射深紫外信号和接收深紫外信号于一体的要求,简化系统结构,顶端透镜位于深紫外发射芯片的上方,进而能够实现聚光功能。In the packaging structure of the TO UV device provided by the present invention, the front pad and the bottom pad are respectively installed on the upper end face and the lower end face of the ceramic module, the side pads are multiple and are installed around the outer side wall of the ceramic module, and different side pads It can be connected to different parts corresponding to the front pads, so as to facilitate the circuit conduction of the deep ultraviolet emission chip mounted on the front pad and the detection chip mounted on the upper end of each side pad, and different parts of the front pad are also connected. It can turn on the deep ultraviolet emitting chip and the detection chip through the side pad respectively, so that the detection chip can receive the signal from the deep ultraviolet emitting chip. At the same time, the circumferentially arranged side pads and the detection chip can realize a single TO device The front side emits the deep ultraviolet photon signal, and the side receives the deep ultraviolet photon signal from 360°, which meets the requirements of the TO ultraviolet device that transmits the deep ultraviolet signal and receives the deep ultraviolet signal, and simplifies the system structure. The top lens is located above the deep ultraviolet emission chip. , and then can realize the light-gathering function.

附图说明Description of drawings

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the accompanying drawings required in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some of the present invention. In the embodiments, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.

图1是本发明提供的TO紫外器件封装结构的结构示意图;Fig. 1 is the structural representation of the TO UV device packaging structure provided by the present invention;

图2是图1的剖视图;Fig. 2 is the sectional view of Fig. 1;

图3是图1的爆炸图;Fig. 3 is the exploded view of Fig. 1;

图4是本发明提供的TO紫外器件封装结构的内部结构示意图;4 is a schematic diagram of the internal structure of the TO UV device packaging structure provided by the present invention;

图5是本发明中陶瓷模块外部线路示意图;5 is a schematic diagram of the external circuit of the ceramic module in the present invention;

图6是本发明中陶瓷模块的结构示意图;Fig. 6 is the structural representation of the ceramic module in the present invention;

图7是本发明中帽盖的结构示意图;Fig. 7 is the structural representation of the cap in the present invention;

图8是本发明中环形透镜的结构示意图;8 is a schematic structural diagram of an annular lens in the present invention;

图中:100-TO紫外器件封装结构,1-管帽,2-顶端透镜,3-环形透镜,4-深紫外发射芯片,5-正面焊盘,6-陶瓷模块,7-探测芯片,8-侧面焊盘,9-底端焊盘,10-底座,11-绝缘套,12-电极柱,13-光出口,14-环形边缘,15-第三通孔,16-正面通孔槽,17-第一金属柱,18-侧面通孔,19-第二通孔,20-第一通孔,21-环形台阶,22-平面结构,23-第一正面焊盘,24-第二正面焊盘,25-第三正面焊盘,26-第四正面焊盘,27-第一侧面焊盘,28-第二侧面焊盘,29-帽沿,30-第二金属柱。In the picture: 100-TO UV device package structure, 1-cap, 2-top lens, 3-ring lens, 4-deep UV emission chip, 5-front pad, 6-ceramic module, 7-detection chip, 8 -Side Pad, 9- Bottom Pad, 10- Base, 11- Insulation Sleeve, 12- Electrode Post, 13- Light Exit, 14- Ring Edge, 15- Third Through Hole, 16- Front Through Hole Slot, 17-first metal pillar, 18-side through hole, 19-second through hole, 20-first through hole, 21-ring step, 22-planar structure, 23-first front side pad, 24-second front side Pad, 25-third front side pad, 26-fourth front side pad, 27-first side pad, 28-second side pad, 29-cap brim, 30-second metal post.

具体实施方式Detailed ways

下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

本发明的目的是提供一种TO紫外器件封装结构,以解决现有的TO紫外器件为分体设计,无法实现单一TO紫外器件既能发射深紫外信号又能接收深紫外信号、结构复杂的技术问题。The purpose of the present invention is to provide a TO UV device packaging structure, in order to solve the existing TO UV device as a separate design, it is impossible to realize the technology that a single TO UV device can both emit deep UV signals and receive deep UV signals, and has a complex structure question.

为使本发明的上述目的、特征和优点能够更加明显易懂,下面结合附图和具体实施方式对本发明作进一步详细的说明。In order to make the above objects, features and advantages of the present invention more clearly understood, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.

如图1-图8所示,本发明提供一种TO紫外器件封装结构100,包括底座10、陶瓷模块6、底端焊盘9、正面焊盘5、侧面焊盘8、深紫外发射芯片4、探测芯片7、顶端透镜2和电极柱12,陶瓷模块6安装在底座10上,且底座10为金属材料制成,作为整个封装结构的支撑载体,正面焊盘5和底端焊盘9分别安装于陶瓷模块6的上端面和下端面,便于实现电路的导通,且正面焊盘5、底端焊盘9和侧面焊盘8均为电镀铜金属形成,形成金属线路焊盘结构,并通过金属焊料焊接与陶瓷模块6形成一整体,侧面焊盘8为多个且围绕陶瓷模块6的外侧壁安装,不同的侧面焊盘8能够与正面焊盘5对应的不同部位导通,进而便于实现对安装于正面焊盘5上的深紫外发射芯片4和安装于各侧面焊盘8上端的探测芯片7进行电路导通,电极柱12为多个,且均依次穿过底座10、底端焊盘9和陶瓷模块6,并与正面焊盘5的不同部位导通,正面焊盘5的不同部位还能够分别导通深紫外发射芯片4和通过侧面焊盘8导通探测芯片7,并使探测芯片7能够接收到深紫外发射芯片4发出的信号,同时周向设置的侧面焊盘8和探测芯片7,能够实现单一TO器件正面发射深紫外光子信号,侧面接收来自360°的深紫外光子信号,达到TO紫外器件集发射深紫外信号和接收深紫外信号于一体的要求,简化系统结构,顶端透镜2位于深紫外发射芯片4的上方,进而能够实现聚光功能,顶端透镜2的下端外周设有一圈环形边缘14。As shown in FIGS. 1-8 , the present invention provides a TO UV device packaging structure 100 , including a base 10 , a ceramic module 6 , a bottom pad 9 , a front pad 5 , a side pad 8 , and a deep UV emission chip 4 , the detection chip 7, the top lens 2 and the electrode column 12, the ceramic module 6 is mounted on the base 10, and the base 10 is made of metal material, as the support carrier of the whole package structure, the front pad 5 and the bottom pad 9 are respectively It is installed on the upper and lower end surfaces of the ceramic module 6 to facilitate the conduction of the circuit, and the front pad 5, the bottom pad 9 and the side pad 8 are formed of electroplated copper metal to form a metal circuit pad structure, and It is integrated with the ceramic module 6 by metal solder welding. There are multiple side pads 8 and are installed around the outer side wall of the ceramic module 6. Different side pads 8 can be connected to different parts corresponding to the front pads 5, which is convenient for Realize the circuit conduction of the deep ultraviolet emission chip 4 installed on the front pad 5 and the detection chip 7 installed on the upper end of each side pad 8, and the electrode posts 12 are multiple, and all pass through the base 10 and the bottom in turn. The pad 9 and the ceramic module 6 are connected to different parts of the front pad 5. Different parts of the front pad 5 can also conduct the deep ultraviolet emission chip 4 and the detection chip 7 through the side pad 8 respectively. The detection chip 7 can receive the signal sent by the deep ultraviolet emission chip 4, and the side pads 8 and the detection chip 7 arranged in the circumferential direction can realize the front side of a single TO device emits deep ultraviolet photon signals, and the side receives the deep ultraviolet light from 360° The photon signal meets the requirements of the TO ultraviolet device integrating the emission of deep ultraviolet signals and the reception of deep ultraviolet signals, and the system structure is simplified. An annular rim 14 is provided on the outer periphery.

具体地,如图5所示,正面焊盘5包括第一正面焊盘23、第二正面焊盘24、第三正面焊盘25和第四正面焊盘26,且正面焊盘5中的各相邻焊盘之间不直接接触,深紫外发射芯片4安装于第一正面焊盘23和第二正面焊盘24的上端面,并通过高温进行焊接固定,第三正面焊盘25和第四正面焊盘26能够通过侧面焊盘8与探测芯片7导通,进而便于实现通过深紫外发射芯片4正面发射深紫外信号,通过探测芯片7实现侧面接收深紫外信号。Specifically, as shown in FIG. 5 , the front-side pads 5 include a first front-side pad 23 , a second front-side pad 24 , a third front-side pad 25 and a fourth front-side pad 26 , and each of the front-side pads 5 There is no direct contact between adjacent pads, the deep ultraviolet emitting chip 4 is mounted on the upper end surfaces of the first front pad 23 and the second front pad 24, and is fixed by welding at high temperature, the third front pad 25 and the fourth The front pads 26 can be connected to the detection chip 7 through the side pads 8 , thereby facilitating the front-side emission of the deep-ultraviolet signal through the deep-ultraviolet emitting chip 4 , and the side reception of the deep-ultraviolet signal through the detection chip 7 .

底座10的底端外缘设有环形台阶21,环形台阶21的设置能够便于其它部件的安装,底座10上开设有多个第一通孔20,底端焊盘9上对应各第一通孔20的位置开设有第二通孔19,第一通孔20和第二通孔19均用于电极柱12的通过,以便于实现电路的导通。优选的,底座10通过模具一体冲压成型,生产工艺简单。The outer edge of the bottom end of the base 10 is provided with an annular step 21, which can facilitate the installation of other components. The base 10 is provided with a plurality of first through holes 20, and the bottom end pad 9 corresponds to each first through hole. The position 20 is provided with a second through hole 19, and both the first through hole 20 and the second through hole 19 are used for the passage of the electrode post 12, so as to realize the conduction of the circuit. Preferably, the base 10 is integrally stamped and formed by a die, and the production process is simple.

第二通孔19的内径大于第一通孔20的内径,进而防止电极柱12安装时与底端焊盘9出现短路异常。The inner diameter of the second through hole 19 is larger than the inner diameter of the first through hole 20 , thereby preventing an abnormal short circuit between the electrode post 12 and the bottom pad 9 during installation.

各第一通孔20内均安装有一绝缘套11,第一通孔20的内径与绝缘套11的外径相等,第一通孔20内壁涂覆有高温粘合剂,实现绝缘套11和底座10的高温粘合固定,绝缘套11的两端开口,且一个绝缘套11内部同轴安装一个电极柱12,且电极柱12的上端伸出绝缘套11,通过绝缘套11对电极柱12进行固定和绝缘。An insulating sleeve 11 is installed in each first through hole 20, the inner diameter of the first through hole 20 is equal to the outer diameter of the insulating sleeve 11, and the inner wall of the first through hole 20 is coated with a high-temperature adhesive to realize the insulating sleeve 11 and the base. 10 is bonded and fixed at high temperature, both ends of the insulating sleeve 11 are open, and an electrode column 12 is coaxially installed inside an insulating sleeve 11, and the upper end of the electrode column 12 protrudes from the insulating sleeve 11, and the electrode column 12 is subjected to the insulation sleeve 11. Fixed and insulated.

本发明提供的TO紫外器件封装结构100还包括一环形透镜3,环形透镜3套设于底座10和陶瓷模块6外周,且环形透镜3的下端与环形台阶21的上端面接触,并通过金属焊料高温焊接固定,环形透镜3的上端与顶端透镜2的下端固定,环形透镜3位于各探测芯片7的外部,进而用于对探测芯片7起到保护作用,延长整体使用寿命,同时还提高整体美观性。The TO UV device packaging structure 100 provided by the present invention further includes an annular lens 3, the annular lens 3 is sleeved on the base 10 and the outer periphery of the ceramic module 6, and the lower end of the annular lens 3 is in contact with the upper end surface of the annular step 21, and passes through the metal solder High temperature welding and fixing, the upper end of the annular lens 3 is fixed with the lower end of the top lens 2, and the annular lens 3 is located outside each detection chip 7, which is used to protect the detection chip 7, prolong the overall service life, and improve the overall appearance. sex.

本发明提供的TO紫外器件封装结构100还包括一管帽1,管帽1套设于环形透镜3外周,且管帽1的下端与环形台阶21的上端面接触,管帽1下端的外缘与环形台阶21的外缘平齐,既实现了管帽1的安装,又保证了整体美观性,同时避免电子器件外露影响美观性,管帽1的上端高于顶端透镜2下端的环形边缘14,且低于顶端透镜2的上端,优选的,如图7所示,在管帽1的下端设有一圈帽沿29,帽沿29的下端面与顶端透镜2的环形边缘14上端面接触并固定,以实现稳定安装,管帽1上对应各侧面焊盘8的位置均开设有光出口13,避免影响探测芯片7对深紫外信号的接收。优选的,管帽1通过模具一体挤压成型。The TO UV device packaging structure 100 provided by the present invention further includes a tube cap 1, the tube cap 1 is sleeved on the outer periphery of the annular lens 3, and the lower end of the tube cap 1 is in contact with the upper end surface of the annular step 21, and the outer edge of the lower end of the tube cap 1 It is flush with the outer edge of the annular step 21, which not only realizes the installation of the cap 1, but also ensures the overall aesthetics, and at the same time avoids the exposure of electronic devices to affect the aesthetics. The upper end of the cap 1 is higher than the annular edge 14 at the lower end of the top lens 2 , and is lower than the upper end of the top lens 2, preferably, as shown in FIG. 7, a ring of cap rim 29 is provided at the lower end of the cap 1, and the lower end face of the cap rim 29 is in contact with the upper end face of the annular edge 14 of the top lens 2 and To achieve stable installation, light outlets 13 are provided on the cap 1 at positions corresponding to the side pads 8 to avoid affecting the detection chip 7's reception of deep ultraviolet signals. Preferably, the cap 1 is integrally extruded through a die.

如图4所示,陶瓷模块6的侧壁设有四个平面结构22,各平面结构22均与陶瓷模块6的轴向平行,且平面结构22围绕陶瓷模块6的侧壁均匀设置,进而便于侧面焊盘8和探测芯片7的安装,相邻的平面结构22之间不接触,一个平面结构22上对应安装一个侧面焊盘8,且侧面焊盘8分为第一侧面焊盘27和第二侧面焊盘28,第一侧面焊盘27用于导通下层线路,第二侧面焊盘28用于导通上层线路;陶瓷模块6上设有多个第三通孔15,第三通孔15用于电极柱12的通过,第三通孔15内填充金属焊料,通过高温把陶瓷模块6与电极柱12的焊接在一起,形成稳定连接,第一通孔20、第二通孔19和第三通孔15的位置一一对应,均为四个,电极柱12也为四个,电极柱12能够依次穿过第一通孔20、第二通孔19和第三通孔15并与正面焊盘5中不同的焊盘导通,即四个电极柱12分别导通第一正面焊盘23、第二正面焊盘24、第三正面焊盘25和第四正面焊盘26;还包括第一金属柱17和第二金属柱30,且第一金属柱17和第二金属柱30分别固定在不同的平面结构22上,第一金属柱17能够通过第一侧面焊盘27导通侧面焊盘8的下层线路和第四正面焊盘26,第二金属柱30能够通过第二侧面焊盘28导通侧面焊盘8的上层线路和第三正面焊盘25,进而再通过第三正面焊盘25和第四正面焊盘26导通探测芯片7。优选的,陶瓷模块6的平面结构22通过铣刀加工而成。As shown in FIG. 4 , the side wall of the ceramic module 6 is provided with four planar structures 22 , each of which is parallel to the axial direction of the ceramic module 6 , and the planar structures 22 are evenly arranged around the side wall of the ceramic module 6 , thereby facilitating the The side pads 8 and the detection chip 7 are installed without contact between the adjacent plane structures 22. One side pad 8 is correspondingly installed on one plane structure 22, and the side pads 8 are divided into a first side pad 27 and a second side pad 27. Two side pads 28, the first side pad 27 is used to conduct the lower layer circuit, and the second side pad 28 is used to conduct the upper layer circuit; the ceramic module 6 is provided with a plurality of third through holes 15, and the third through holes 15 is used for the passage of the electrode column 12, the third through hole 15 is filled with metal solder, and the ceramic module 6 and the electrode column 12 are welded together at high temperature to form a stable connection. The first through hole 20, the second through hole 19 and The positions of the third through holes 15 correspond one by one, and there are four, and there are also four electrode columns 12. The electrode columns 12 can pass through the first through hole 20, the second through hole 19 and the third through hole 15 in sequence and connect with Different pads in the front pads 5 are turned on, that is, the four electrode posts 12 are respectively turned on to the first front pad 23, the second front pad 24, the third front pad 25 and the fourth front pad 26; also It includes a first metal column 17 and a second metal column 30, and the first metal column 17 and the second metal column 30 are respectively fixed on different plane structures 22, and the first metal column 17 can be conductive through the first side pad 27 The lower layer circuit of the side pad 8 and the fourth front pad 26, the second metal pillar 30 can conduct the upper layer circuit of the side pad 8 and the third front pad 25 through the second side pad 28, and then pass through the third side pad 25. The front-side pads 25 and the fourth front-side pads 26 conduct the probe chip 7 . Preferably, the planar structure 22 of the ceramic module 6 is processed by a milling cutter.

陶瓷模块6的上端面对应第一金属柱17和第二金属柱30的位置还开设有正面通孔槽16,且两个正面通孔槽16能够分别与第一金属柱17和第二金属柱30导通,实际生产制造过程中,通过线路设计结构依次对陶瓷模块6的平面结构22进行电镀铜金属,形成一个并联的线路层结构,并通过电镀铜金属填充在正面通孔槽16内,各平面结构22上均开设有侧面通孔18,且侧面通孔18内部能够电镀铜金属,并通过电镀铜金属导通金属柱和侧面焊盘8,便于实现电路的导通。优选的,各侧面通孔18、正面通孔槽16和第三通孔15等均为通过激光在陶瓷模块6的平面结构22指定位置进行激光打孔形成。The upper end surface of the ceramic module 6 is also provided with a front through hole slot 16 at the position corresponding to the first metal column 17 and the second metal column 30 , and the two front through hole slots 16 can be respectively connected with the first metal column 17 and the second metal column 17 . The column 30 is turned on. In the actual manufacturing process, the planar structure 22 of the ceramic module 6 is electroplated with copper metal in turn through the circuit design structure to form a parallel circuit layer structure, and the front through-hole groove 16 is filled with electroplated copper metal. Each plane structure 22 is provided with side through holes 18, and the inside of the side through holes 18 can be electroplated with copper metal, and the metal pillars and the side pads 8 are connected through the electroplated copper metal, so as to facilitate the conduction of the circuit. Preferably, each of the side through holes 18 , the front through hole grooves 16 and the third through holes 15 are formed by laser drilling at designated positions of the planar structure 22 of the ceramic module 6 by laser.

各探测芯片7的正极和正极对应、负极和负极对应,形成多颗探测芯片7并联线路结构,实现更高的深紫外信号接收灵敏度。The positive electrode of each detection chip 7 corresponds to the positive electrode, and the negative electrode corresponds to the negative electrode to form a parallel circuit structure of multiple detection chips 7, so as to achieve higher deep ultraviolet signal receiving sensitivity.

在实际加工过程中,通过电镀方式,在整体结构外面依次进行电镀镍钯金材质金属。In the actual processing process, the nickel-palladium-gold material metal is electroplated on the outside of the overall structure in turn by means of electroplating.

本说明书中应用了具体个例对本发明的原理及实施方式进行了阐述,以上实施例的说明只是用于帮助理解本发明的方法及其核心思想;同时,对于本领域的一般技术人员,依据本发明的思想,在具体实施方式及应用范围上均会有改变之处。综上,本说明书内容不应理解为对本发明的限制。In this specification, specific examples are used to illustrate the principles and implementations of the present invention, and the descriptions of the above embodiments are only used to help understand the method and the core idea of the present invention; There will be changes in the specific implementation manner and application scope of the idea of the invention. In conclusion, the contents of this specification should not be construed as limiting the present invention.

Claims (6)

1. A TO ultraviolet device packaging structure is characterized in that: the deep ultraviolet radiation detection device comprises a base, a ceramic module, a bottom pad, a front pad, side pads, a deep ultraviolet radiation chip, a detection chip, a top lens and electrode columns, wherein the ceramic module is installed on the base, the front pad and the bottom pad are respectively installed on the upper end face and the lower end face of the ceramic module, the side pads are multiple and are installed around the outer side wall of the ceramic module, different side pads can be conducted with different parts corresponding to the front pad, the deep ultraviolet radiation chip is installed on the front pad, the detection chips are multiple and are respectively installed on the side pads, the electrode columns are multiple, sequentially penetrate through the base, the bottom pad and the ceramic module and are conducted with different parts of the front pad, different parts of the front pad can also be respectively conducted with the deep ultraviolet radiation chip and the detection chip through the side pad, the detection chip can receive signals sent by the deep ultraviolet emission chip, and the top end lens is positioned above the deep ultraviolet emission chip;
the front bonding pads comprise a first front bonding pad, a second front bonding pad, a third front bonding pad and a fourth front bonding pad, the deep ultraviolet emission chip is mounted on the upper end faces of the first front bonding pad and the second front bonding pad, and the third front bonding pad and the fourth front bonding pad can be conducted with the detection chip through the side bonding pads;
an annular step is arranged at the outer edge of the bottom end of the base, a plurality of first through holes are formed in the base, second through holes are formed in positions, corresponding to the first through holes, of the bottom end bonding pad, and the first through holes and the second through holes are used for the electrode column to pass through;
the annular lens is sleeved on the peripheries of the base and the ceramic module, the lower end of the annular lens is in contact with the upper end face of the annular step, the upper end of the annular lens is fixed with the lower end of the top end lens, and the annular lens is positioned outside each detection chip;
the side wall of the ceramic module is provided with four planar structures, the planar structures are uniformly arranged around the side wall of the ceramic module, adjacent planar structures are not in contact with each other, one planar structure is correspondingly provided with one side surface bonding pad, and the side surface bonding pads are divided into a first side surface bonding pad and a second side surface bonding pad; a plurality of third through holes are formed in the ceramic module and used for the electrode columns to pass through; still include first metal post and second metal post, just first metal post with the second metal post is fixed respectively different on the planar structure, first metal post can pass through first side pad switches on the lower floor's circuit of side pad with the positive pad of fourth, the second metal post can pass through second side pad switches on the upper strata circuit of side pad with the positive pad of third.
2. The TO ultraviolet device package structure of claim 1, wherein: the inner diameter of the second through hole is larger than that of the first through hole.
3. The TO ultraviolet device package structure of claim 1, wherein: and each first through hole is internally provided with an insulating sleeve, two ends of each insulating sleeve are opened, and one electrode column is coaxially arranged in one insulating sleeve.
4. The TO ultraviolet device package structure of claim 1, wherein: the LED lamp tube is characterized by further comprising a tube cap, the tube cap is sleeved on the periphery of the annular lens, the lower end of the tube cap is in contact with the upper end face of the annular step, the outer edge of the lower end of the tube cap is flush with the outer edge of the annular step, the upper end of the tube cap is higher than the annular edge of the lower end of the top end lens and lower than the upper end of the top end lens, and light outlets are formed in positions, corresponding to the side surface welding discs, on the tube cap.
5. The TO ultraviolet device package structure of claim 1, wherein: the upper end face of the ceramic module is provided with front through hole grooves corresponding to the positions of the first metal column and the second metal column, the two front through hole grooves can be respectively communicated with the first metal column and the second metal column, each plane structure is provided with side through holes, copper metal can be electroplated inside the side through holes, and the metal columns and the side pads are communicated through the electroplated copper metal.
6. The TO ultraviolet device package structure of claim 1, wherein: the positive pole and the positive pole of each detection chip correspond to each other, and the negative pole of each detection chip correspond to each other.
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