CN114360824A - NiCr CuNi double-layer film resistor with near-zero resistance temperature coefficient and preparation method thereof - Google Patents
NiCr CuNi double-layer film resistor with near-zero resistance temperature coefficient and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the technical field of metal film surface treatment, and discloses a NiCr CuNi double-layer film resistor with a near-zero resistance temperature coefficient, which consists of a NiCr layer and a CuNi layer, wherein the NiCr layer is arranged on the substrate side, the CuNi layer is arranged on the top of the NiCr layer, the NiCr layer contains 80:20 wt% of Ni and has a thickness of 150-300 nm, the CuNi layer contains 75:25 at% to 50:50 at% of Cu and Ni, and has an overall thickness of 250-720 nm, and the crystal structures of the NiCr layer and the CuNi layer are both FCC single-phase solid solutions. The NiCr CuNi double-layer film resistor with the resistance temperature coefficient close to 0 is prepared by using a NiCr alloy target, a Cu target and a Ni target and adopting a magnetron sputtering technology, the element content of a CuNi layer can be adjusted by changing the power ratio of Cu and Ni targets during co-sputtering, so that the resistance temperature coefficient of the CuNi layer is changed, the effect of adjusting the thickness ratio of the two layers can be achieved by adjusting the sputtering time length of the NiCr layer and the sputtering time length of the co-sputtered CuNi layer, and the resistance temperature coefficient is adjusted so that the absolute value of the resistance temperature coefficient is close to 0.
Description
Technical Field
The invention belongs to the technical field of metal film surface treatment, and particularly relates to a NiCr CuNi double-layer film resistor with a near-zero resistance temperature coefficient and a preparation method thereof.
Background
The thin film resistor is one of the basic devices of an integrated circuit, and is used in a huge amount in the integrated circuit. The preparation of the low-resistance temperature coefficient film with the resistivity not changing along with the temperature of a working environment is one of the core problems which are urgently needed to be solved in the development of high-precision integrated circuits. The thin film resistor has the advantages of wide surface sheet resistance value range (10 omega/□ -100K omega/□), low and adjustable resistance temperature coefficient, long service life, good repeatability, small parasitic resistance and the like, and is widely applied to hybrid integrated circuits, microwave integrated circuits, chip resistors and other precise electronic instruments at present.
With the improvement of the integration density of microelectronic devices, the preparation of passive thin film resistors on a substrate by using a thin film process has become a very important part in the integrated circuit process, and the thin film resistors play an important role in the aspects of current limiting, voltage stabilizing, high-frequency terminal impedance and the like in the integrated circuit; several material systems are commonly used for the thin film resistor at present: NiCr, CrSi and TaNx, NiCr alloy has high resistivity and excellent stability, so that it is widely commercialized as thin film resistor material, but NiCr alloy thin film resistor has short plates with insufficient resistance stability and large temperature coefficient of resistance.
Disclosure of Invention
The invention aims to solve the problems, and provides a NiCr CuNi double-layer film resistor with a near-zero resistance temperature coefficient and a preparation method thereof, wherein the method is mainly realized by adopting a magnetron sputtering technology, and the prepared double-layer film resistor has the advantage that the film resistor with the resistance temperature coefficient ranging from 0 ppm/DEG C to 10 ppm/DEG C can be obtained by adjusting the thickness ratio of a NiCr layer to a CuNi layer.
In order to achieve the purpose, the invention provides the following technical scheme: the NiCr CuNi double-layer film resistor with the near-zero resistance temperature coefficient is composed of a NiCr layer and a CuNi layer, wherein the NiCr layer is arranged on the bottom side of a substrate, the CuNi layer is arranged on the top of the NiCr layer, the content of elements of the NiCr layer is 80:20 wt% of Cr and 150-300 nm in thickness, the content ratio of Cu to Ni in the CuNi layer is 75:25 at% to 50:50 at% and the overall thickness is 250-720 nm, and the crystal structures of the NiCr layer and the CuNi layer are both FCC single-phase solid solutions;
according to the invention, a traditional NiCr alloy (80:20 wt%) film resistor and a CuNi film are stacked to form a double-layer film structure, the current direction is parallel to the film surface, so that the NiCr film and the CuNi film can achieve the effect of parallel connection, and the effect of adjusting the temperature coefficient of the double-layer film resistor can be achieved by adjusting the thickness proportion of the NiCr film with a positive temperature coefficient of resistance and the CuNi film with a negative temperature coefficient of resistance, so that the absolute value of the temperature coefficient of resistance is close to 0; the other film layer is selected from CuNi, the film layer with the negative resistance temperature coefficient can be obtained by changing the element content of the CuNi film, and the film layer and the NiCr film are compounded to form the film resistor with the zero resistance temperature coefficient.
As a preferred technical scheme of the invention, the double-layer film resistor has an average temperature coefficient of resistance of-86-15 ppm/DEG C, an average square resistance value of 0.70-1.47 omega/□, an average elastic modulus of 70GPa and an average hardness of 5GPa when the temperature is in the range of 25-125 ℃;
for the above-mentioned Ω/□, the unit is a unit of Sheet Resistance, the size of which is independent of the sample size, and is defined as a square semiconductor thin layer, the Resistance presented in the direction of current flow is in ohms per square, and the Sheet Resistance (Sheet Resistance) is the Resistance per unit area of unit thickness of the conductive material, called Sheet Resistance for short, and ideally is equal to the resistivity of the material divided by the thickness.
The application also provides a preparation method of the NiCr CuNi double-layer film resistor with the near-zero resistance temperature coefficient, which comprises the following specific operation steps:
s1, placing a Si sheet or other substrates on a sample table in a magnetron sputtering device, and mounting a sputtering target material on a target seat, wherein the target material is a NiCr alloy target material, a Cu target and a Ni target;
s2, vacuumizing the deposition chamber, introducing Ar gas, and connecting the substrate to a radio frequency power supply for reverse sputtering cleaning;
s3, connecting the NiCr alloy target material into a sputtering power supply, sputtering and depositing a NiCr film, and closing the NiCr target after the specified time is reached;
and S4, connecting the Cu and Ni targets into a sputtering power supply, co-sputtering and depositing a CuNi film, adjusting the sputtering power of the two targets as required, and closing the Cu and Ni targets after reaching the specified time.
In a preferred embodiment of the present invention, the sputtering target used in step S1 is an NiCr alloy target material, a Cu target, or an Ni target, wherein the mass ratio of the NiCr alloy target elements is Ni to Cr 80 to 20.
As a preferred technical scheme of the invention, the vacuum degree is pumped to in the step S2<7×10-4And after Pa, introducing Ar to keep the pressure in the vacuum chamber at about 1.0-2.0 Pa, turning on a radio frequency power supply and adjusting the power to 60-120W, and carrying out reverse sputtering cleaning on the substrate for 10-15 min.
As a preferred technical scheme of the invention, in the step S3, the vacuum degree in the sputtering chamber is pumped to<7×10-4And introducing Ar gas, adjusting the vacuum degree to 0.2-0.8 Pa, sputtering the NiCr alloy target with the sputtering power of 100W and the substrate bias voltage of-40V-100V, and stopping sputtering the NiCr target after depositing for 20-40 min.
As a preferred technical scheme of the invention, the power of a Cu target is 50W, the power of a Ni target is 50W-120W, the bias voltage of a substrate is-40V-100V when the co-sputtering deposition is carried out in the step S4, and the sputtering of the Ni target and the Cu target is stopped after the deposition is carried out for 20-60 min; when Cu and Ni targets are co-sputtered, the component of the CuNi layer can be adjusted by adjusting the sputtering power ratio of the two targets, and the component content range of the CuNi layer film is 75:25 at% to 50:50 at%.
As a preferred technical scheme of the invention, the sputtering power supply, the bias power supply and the Ar gas are closed and the vacuum pumping is continued after the deposition in the step S4 is finished, and the substrate is taken out after the temperature is lower than 50 ℃, so that the double-layer film resistor with the near-zero resistance temperature coefficient can be obtained.
Compared with the prior art, the invention has the following beneficial effects:
1. the prepared NiCr CuNi double-layer film resistor is prepared by utilizing a NiCr alloy target, a Cu target and a Ni target and adopting a magnetron sputtering technology, the element content of a CuNi layer can be adjusted by changing the power ratio of Cu and Ni targets during co-sputtering, so that the resistance temperature coefficient of the CuNi layer is changed, the effect of adjusting the thickness ratio of the two layers can be achieved by adjusting the sputtering time length of the NiCr layer and the sputtering time length of the co-sputtered CuNi layer, and the resistance temperature coefficient is adjusted to enable the absolute value to be close to 0.
Drawings
FIG. 1 is a schematic view of an SEM surface morphology picture of a NiCr CuNi double-layer film resistor of the invention;
FIG. 2 is a schematic view of a SEM cross-section of a NiCr CuNi double-layer film resistor of the present invention;
FIG. 3 is a schematic diagram of an XRD spectrum of a NiCr CuNi double-layer film resistor of the present invention;
FIG. 4 is a GDOES element content map diagram of the NiCr CuNi double-layer film resistor of the present invention;
FIG. 5 is a schematic diagram of a square resistance-temperature line graph (540 nm; 720 nm; 1040nm) of a NiCr CuNi double-layer thin film resistor according to the present invention;
FIG. 6 is a schematic diagram of the temperature coefficient of resistance-temperature line of the NiCr CuNi dual-layer thin film resistor of the present invention (540 nm; 720 nm; 1040 nm).
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 6, the present invention provides a NiCr CuNi dual-layer thin film resistor having a near-zero temperature coefficient of resistance and a method for manufacturing the same, which will be briefly described with reference to the following drawings, wherein the upper line of fig. 3 is Ni fcc, and the lower line thereof is Cr fcc.
Example 1
The invention provides a preparation method of a thin film resistor with a near-zero resistance temperature coefficient, which specifically comprises the following steps:
sequentially carrying out ultrasonic cleaning on a Si sheet with a high-resistance silicon film with the resistivity of 7.5-11.5 omega-cm in acetone, alcohol and deionized water, aiming at removing pollutants attached to the surface of the Si sheet and blow-drying deionized water stain on the surface of the Si sheet by using a blower;
after being fixed on a sample disc, the Si wafer is placed in a sample transmission chamber of the magnetron sputtering equipment, and the vacuum degree of the sample transmission chamber is pumped to 7 multiplied by 10-4After Pa, introducing Ar, regulating the flow rate of Ar to 30sccm, turning on a radio frequency power supply to regulate the power to 120W so as to perform reverse sputtering cleaning on the Si wafer and further remove impurities on the surface of the Si wafer, wherein the pressure of a sample transfer chamber is kept at about 2.0Pa during reverse sputtering, and the reverse sputtering time is 10 min;
and conveying the Si sheet after back-sputtering cleaning and the sample disc into a sputtering chamber, wherein the sputtering target material is a NiCr alloy target, a Cu target and a Ni target, wherein the mass ratio of the elements of the NiCr alloy target is Ni to Cr 80 to 20. The vacuum degree in the sputtering chamber is pumped to 5X 10-4Pa；
Introducing Ar, setting the flow of Ar to be 30sccm, adjusting the vacuum degree to be 5 multiplied by 10 < -1 > Pa by adjusting a molecular pump valve, firstly connecting a NiCr target into a direct-current power supply, setting the sputtering power to be 100W, setting the bias voltage to be minus 80V, pre-sputtering for 10min, and removing impurities and pollutants on the surface of the target so as to improve the quality of subsequent coating;
after the pre-sputtering is finished, moving away the sample plate baffle and simultaneously opening a power supply of a sample plate rotation motor to start sputtering;
the sputtering duration is 40min, the sputtering power supply, the bias power supply and the argon gas flowmeter are closed after the sputtering is finished, then the Cu target and the Ni target are simultaneously connected into the direct current power supply, the Ar flowmeter is opened and set to be 30sccm, the sputtering pressure is adjusted to be 0.5Pa, the sputtering power supply and the bias power supply are opened, the power of the Cu target and the power of the Ni target are respectively adjusted to be 50W, the bias voltage is adjusted to be-80V, the co-sputtering duration is 20min, the sputtering power supply, the bias power supply, the rotation motor, the sample disc baffle, the Ar flowmeter and the valves thereof are closed after the sputtering is finished, then the molecular pump valve is opened to the maximum for continuous vacuum pumping, finally the sample disc with the plated thin film Si sheet is transferred into the sample transfer chamber and taken out, and the thin film resistor with the near-zero resistance temperature coefficient can be obtained, the total thickness of the thin film resistor obtained in the embodiment is 540nm, the thickness of the first layer NiCr close to the side of the Si substrate is 300nm, the thickness of the second CuNi layer is 240nm, the square resistance value of the film at 25 ℃ is 1.47 omega/□, and the variation range of the temperature coefficient of resistance of the film at 25 ℃ to 125 ℃ is 0-7.9 ppm/DEG C.
Example 2
The invention provides a preparation method of a thin film resistor with a near-zero resistance temperature coefficient, which comprises the following steps:
sequentially carrying out ultrasonic cleaning on a Si sheet with a high-resistance silicon film with the resistivity of 7.5-11.5 omega-cm in acetone, alcohol and deionized water, aiming at removing pollutants attached to the surface of the Si sheet and blow-drying deionized water stain on the surface of the Si sheet by using a blower;
after being fixed on a sample disc, the Si wafer is placed in a sample transmission chamber of the magnetron sputtering equipment, and the vacuum degree of the sample transmission chamber is pumped to 6 multiplied by 10-4After Pa, introducing Ar, regulating the flow rate of Ar to 30sccm, turning on a radio frequency power supply to regulate the power to 100W so as to perform reverse sputtering cleaning on the Si wafer and further remove impurities on the surface of the Si wafer, wherein the pressure of a sample transfer chamber is kept about 1.7Pa during reverse sputtering, and the reverse sputtering time is 13 min;
conveying the Si sheet after back-sputtering cleaning together with a sample disc into a sputtering chamber, wherein the sputtering target material is selected from NiCr alloy target material, Cu target and Ni target, the mass ratio of the elements of the NiCr alloy target material is Ni: Cr: 80:20, and pumping the vacuum degree in the sputtering chamber to 3.5 multiplied by 10-4Pa；
Ar is introduced, the flow rate of the Ar is set to be 30sccm, and the vacuum degree is adjusted to be 5 multiplied by 10 by adjusting a molecular pump valve-1Pa, firstly connecting a NiCr target material into a direct-current power supply, setting the sputtering power to be 100W, setting the bias voltage to be-80V, pre-sputtering for 15min, and removing impurities and pollutants on the surface of the target material so as to improve the quality of subsequent coating;
after the pre-sputtering is finished, moving away the sample plate baffle and simultaneously opening a power supply of a sample plate rotation motor to start sputtering;
the sputtering duration is 40min, the sputtering power supply, the bias power supply and the argon gas flowmeter are closed after the sputtering is finished, then the Cu target and the Ni target are simultaneously connected into the direct current power supply, the Ar flowmeter is opened and set to be 30sccm, the sputtering pressure is adjusted to be 0.5Pa, the sputtering power supply and the bias power supply are opened, the power of the Cu target and the power of the Ni target are respectively adjusted to be 50W, the bias voltage is adjusted to be-80V, the co-sputtering duration is 40min, the sputtering power supply, the bias power supply, the rotation motor, the sample disc baffle, the Ar flowmeter and the valve thereof are closed after the sputtering is finished, then the molecular pump valve is opened to the maximum for continuous vacuum pumping, finally the sample disc with the plated thin film Si sheet is transferred into the sample transfer chamber and taken out, and the thin film resistor with the near-zero resistance temperature coefficient can be obtained, the total thickness of the thin film resistor obtained in the embodiment is 720nm, the thickness of the first layer NiCr close to the side of the Si substrate is 300nm, the thickness of the second CuNi layer is 420nm, the square resistance of the film at 25 ℃ is 0.89 omega/□, and the variation range of the temperature coefficient of resistance of the film at 25 ℃ to 125 ℃ is-170-0 ppm/DEG C.
Example 3
The invention provides a preparation method of a thin film resistor with a near-zero resistance temperature coefficient, which comprises the following steps:
sequentially carrying out ultrasonic cleaning on a Si sheet with a high-resistance silicon film with the resistivity of 7.5-11.5 omega-cm in acetone, alcohol and deionized water, aiming at removing pollutants attached to the surface of the Si sheet and blow-drying deionized water stain on the surface of the Si sheet by using a blower;
after being fixed on a sample disc, the Si wafer is placed in a sample transmission chamber of the magnetron sputtering equipment, and the vacuum degree of the sample transmission chamber is pumped to 5 multiplied by 10-4After Pa, Ar is introduced and the flow rate is adjusted to 30sccm, and the gun is openedAnd adjusting the power of the frequency power supply to 80W to perform reverse sputtering cleaning on the Si wafer, aiming at further removing impurities on the surface of the Si wafer, wherein the pressure of the sample transfer chamber is kept at about 1.5Pa during reverse sputtering, and the reverse sputtering time is 15 min.
Conveying the Si sheet after back-sputtering cleaning together with a sample disc into a sputtering chamber, selecting a NiCr alloy target material, a Cu target and a Ni target as the sputtering target material, wherein the mass ratio of the elements of the NiCr alloy target material to the elements of the Cr alloy target material is 80:20, and pumping the vacuum degree in the sputtering chamber to 2 multiplied by 10-4Pa。
Introducing Ar, setting the flow of Ar to be 30sccm, adjusting the vacuum degree to be 5 multiplied by 10 < -1 > Pa by adjusting a molecular pump valve, firstly connecting the NiCr target material into a direct-current power supply, setting the sputtering power to be 100W, setting the bias voltage to be minus 80V, pre-sputtering for 20min, and removing impurities and pollutants on the surface of the target material so as to improve the quality of subsequent coating.
After the pre-sputtering is finished, moving away the sample plate baffle and simultaneously opening a power supply of a sample plate rotation motor to start sputtering;
the sputtering duration is 40min, the sputtering power supply, the bias power supply and the argon gas flowmeter are closed after the sputtering is finished, then the Cu target and the Ni target are simultaneously connected into the direct current power supply, the Ar flowmeter is opened and set to be 30sccm, the sputtering pressure is adjusted to be 0.5Pa, the sputtering power supply and the bias power supply are opened, the power of the Cu target and the power of the Ni target are respectively adjusted to be 50W, the bias voltage is adjusted to be-80V, the co-sputtering duration is 60min, the sputtering power supply, the bias power supply, the rotation motor, the sample disc baffle, the Ar flowmeter and the valve thereof are closed after the sputtering is finished, then the molecular pump valve is opened to the maximum for continuous vacuum pumping, finally the sample disc with the plated thin film Si sheet is transferred into the sample transfer chamber and taken out, and the thin film resistor with the near-zero resistance temperature coefficient can be obtained, the total thickness of the thin film resistor obtained in the embodiment is 1040nm, the thickness of the first layer NiCr close to the side of the Si substrate is 300nm, the thickness of the second CuNi layer is 740nm, the square resistance value of the film at 25 ℃ is 0.69 omega/□, and the variation range of the temperature coefficient of resistance of the film at 25 ℃ to 125 ℃ is-275 ppm to 150 ppm/DEG C.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A NiCr CuNi double-layer film resistor with a near-zero temperature coefficient of resistance is characterized in that: the double-layer film resistor is composed of a NiCr layer and a CuNi layer, wherein the NiCr layer is arranged on the bottom side of a substrate, the CuNi layer is arranged on the top of the NiCr layer, the content of elements of the NiCr layer is 80:20 wt%, the thickness of the NiCr layer is 150-300 nm, the content ratio of Cu to Ni in the CuNi layer is 75:25 at% to 50:50 at%, the overall thickness of the CuNi layer is 250-720 nm, and the crystal structures of the NiCr layer and the CuNi layer are both FCC single-phase solid solutions.
2. A NiCr CuNi double layer thin film resistor having a near-zero temperature coefficient of resistance according to claim 1, wherein: the double-layer film resistor has an average temperature coefficient of resistance of-86 to 15 ppm/DEG C, an average square resistance of 0.70 to 1.47 omega/□, an average elastic modulus of 70GPa, and an average hardness of 5GPa in a temperature range of 25 to 125 ℃.
3. A preparation method of a NiCr CuNi double-layer film resistor with a near-zero resistance temperature coefficient is characterized by comprising the following steps: the specific operation steps are as follows:
s1, placing a Si sheet or other substrates on a sample table in a magnetron sputtering device, and mounting a sputtering target material on a target seat, wherein the target material is a NiCr alloy target material, a Cu target and a Ni target;
s2, vacuumizing the deposition chamber, introducing Ar gas, and connecting the substrate to a radio frequency power supply for reverse sputtering cleaning;
s3, connecting the NiCr alloy target material into a sputtering power supply, sputtering and depositing a NiCr film, and closing the NiCr target after the specified time is reached;
and S4, connecting the Cu and Ni targets into a sputtering power supply, co-sputtering and depositing a CuNi film, adjusting the sputtering power of the two targets as required, and closing the Cu and Ni targets after reaching the specified time.
4. The method for preparing NiCr CuNi double-layer film resistor with near-zero temperature coefficient of resistance according to claim 3, characterized in that: the sputtering target used in the step S1 is an NiCr alloy target material, a Cu target, and an Ni target, wherein the mass ratio of the elements of the NiCr alloy target is Ni: Cr ═ 80: 20.
5. The method for preparing NiCr CuNi double-layer film resistor with near-zero temperature coefficient of resistance according to claim 3, characterized in that: in the step S2, the vacuum degree is pumped to<7×10-4And after Pa, introducing Ar to keep the pressure in the vacuum chamber at about 1.0-2.0 Pa, turning on a radio frequency power supply and adjusting the power to 60-120W, and carrying out reverse sputtering cleaning on the substrate for 10-15 min.
6. The method for preparing NiCr CuNi double-layer film resistor with near-zero temperature coefficient of resistance according to claim 3, characterized in that: in step S3, the vacuum degree in the sputtering chamber is pumped to<7×10-4And introducing Ar gas, adjusting the vacuum degree to 0.2-0.8 Pa, sputtering the NiCr alloy target with the sputtering power of 100W and the substrate bias voltage of-40V-100V, and stopping sputtering the NiCr target after depositing for 20-40 min.
7. The method for preparing NiCr CuNi double-layer film resistor with near-zero temperature coefficient of resistance according to claim 3, characterized in that: s4, the Cu target power is 50W, the Ni target power is 50W-120W, the substrate bias is-40V-100V when co-sputtering deposition is carried out, and the sputtering of Ni and Cu targets is stopped after 20-60 min of deposition; when Cu and Ni targets are co-sputtered, the component of the CuNi layer can be adjusted by adjusting the sputtering power ratio of the two targets, and the component content range of the CuNi layer film is 75:25 at% to 50:50 at%.
8. The method for preparing NiCr CuNi double-layer film resistor with near-zero temperature coefficient of resistance according to claim 3, characterized in that: and S4, after the deposition is finished, turning off a sputtering power supply, a bias power supply and Ar gas, continuously vacuumizing, and taking out the substrate when the temperature of the substrate is lower than 50 ℃ to obtain the double-layer film resistor with the near-zero resistance temperature coefficient.
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| US4104607A (en) * | 1977-03-14 | 1978-08-01 | The United States Of America As Represented By The Secretary Of The Navy | Zero temperature coefficient of resistance bi-film resistor |
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| CN1243322A (en) * | 1999-08-06 | 2000-02-02 | 上海交通大学 | Metal film high-resistance resistor and mfg. technology thereof |
| CN1547218A (en) * | 2003-12-01 | 2004-11-17 | 上海应用技术学院 | Method for making double-layer alloy plating metallic film resistor |
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2021
- 2021-12-29 CN CN202111640595.3A patent/CN114360824A/en active Pending
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| US4104607A (en) * | 1977-03-14 | 1978-08-01 | The United States Of America As Represented By The Secretary Of The Navy | Zero temperature coefficient of resistance bi-film resistor |
| US4746896A (en) * | 1986-05-08 | 1988-05-24 | North American Philips Corp. | Layered film resistor with high resistance and high stability |
| CN1243322A (en) * | 1999-08-06 | 2000-02-02 | 上海交通大学 | Metal film high-resistance resistor and mfg. technology thereof |
| CN1547218A (en) * | 2003-12-01 | 2004-11-17 | 上海应用技术学院 | Method for making double-layer alloy plating metallic film resistor |
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| HUAN-YI CHENG: "（"Developments of Cr-Si and Ni-Cr Single-Layer Thin-Film Resistors and a Bi-Layer Thin-Film Resistor with Adjustable Temperature Coefficient of Resistor"", 《MATERIALS SCIENCES AND APPLICATIONS》 * |
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