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CN114270504B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN114270504B
CN114270504B CN201980099008.9A CN201980099008A CN114270504B CN 114270504 B CN114270504 B CN 114270504B CN 201980099008 A CN201980099008 A CN 201980099008A CN 114270504 B CN114270504 B CN 114270504B
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China
Prior art keywords
semiconductor package
main portion
metal plate
semiconductor
spring
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CN201980099008.9A
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CN114270504A (zh
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吉松直树
荒木慎太郎
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明涉及的半导体装置具有：冷却器；半导体封装件，其设置于冷却器的上表面；金属板，其具有在半导体封装件的上表面设置的主要部分；弹簧，其设置于主要部分之上，通过弹力将主要部分朝向半导体封装件的上表面按压；以及固定件，其在被弹簧施加弹力的状态下将弹簧固定于主要部分的上表面，主要部分的与半导体封装件的上表面相对的面是平坦面。

Description

半导体装置
技术领域
本发明涉及半导体装置。
背景技术
在专利文献1中公开了在中央部具有第1贯通孔的半导体模块。在半导体模块的上表面侧配置弹簧。另外，在半导体模块的下表面侧配置具有螺孔的冷却装置。具有头部的螺钉穿过半导体模块的第1贯通孔，与冷却装置的螺孔螺合，将半导体模块固定于冷却装置。螺钉的头部相对于半导体模块的上表面保持一定间隔，在螺钉的头部与半导体模块的上表面之间夹着弹簧。
专利文献1：日本专利第5754528号公报
发明内容
就半导体装置而言，由于层叠的部件的膨胀收缩差，有时在高温或低温时在部件间产生间隙。另外，部件间有时成为过加压的状态。如果反复出现产生了间隙及成为过加压的状态，则在部件间涂敷的脂状物有可能会泵出。
在专利文献1中，通过弹簧按压被树脂模塑的封装件的树脂面。由此，将封装件的冷却面推压至冷却器。因此，能够与环境温度的变化相应地得到稳定的加压力，能够抑制在封装件冷却面和冷却器之间涂敷的脂状物的泵出。
但是，在使弹簧直接与树脂面接触而按压的情况下，在应力高的部分有可能引起树脂的蠕变或开裂。
本发明就是为了解决上述问题而提出的，其目的在于得到能够提高可靠性的半导体装置。
本发明涉及的半导体装置具有：冷却器；半导体封装件，其设置于该冷却器的上表面；金属板，其具有在该半导体封装件的上表面设置的主要部分；弹簧，其设置于该主要部分之上，通过弹力将该主要部分朝向该半导体封装件的该上表面按压；以及固定件，其在被该弹簧施加该弹力的状态下将该弹簧固定于该主要部分的上表面，该主要部分的与该半导体封装件的该上表面相对的面是平坦面。
发明的效果
就本发明涉及的半导体装置而言，通过弹簧的弹力由金属板的平坦的面按压半导体封装件。因此，与半导体封装件被弹簧直接按压的情况相比，能够对局部地将应力施加于半导体封装件进行抑制。因此，能够抑制在半导体封装件产生蠕变或裂缝，能够提高可靠性。
附图说明
图1是实施方式1涉及的半导体装置的俯视图。
图2是实施方式1涉及的半导体装置的剖视图。
图3是实施方式1涉及的半导体模块的剖视图。
图4是实施方式2涉及的半导体装置的俯视图。
图5是实施方式3涉及的半导体装置的俯视图。
图6是实施方式3涉及的半导体装置的剖视图。
图7是实施方式4涉及的半导体装置的剖视图。
图8是实施方式5涉及的半导体装置的俯视图。
图9是实施方式6涉及的半导体装置的俯视图。
图10是实施方式6涉及的半导体装置的剖视图。
图11是实施方式7涉及的半导体装置的剖视图。
具体实施方式
参照附图对本发明的实施方式涉及的半导体装置进行说明。对相同或对应的结构要素标注相同标号，有时省略重复说明。
实施方式1
图1是实施方式1涉及的半导体装置100的俯视图。图2是实施方式1涉及的半导体装置100的剖视图。半导体装置100具有冷却器10。冷却器10也称为散热器。冷却器10例如由金属形成。
在冷却器10的上表面设置半导体模块20。半导体模块20例如是功率模块。半导体模块20例如也可以是三相逆变器电路。半导体装置100例如用于对电动汽车或电车等的电动机进行控制的逆变器。半导体装置100也可以用于再生用的转换器。
半导体模块20具有在冷却器10的上表面设置的半导体封装件21。半导体封装件21由树脂形成。半导体模块20被通过树脂进行模塑。
在冷却器10和半导体封装件21之间设置脂状物70。脂状物70是以填埋半导体封装件21的背面和冷却器10之间的细小间隙的方式涂敷的。半导体封装件21的背面成为冷却面。
从半导体封装件21延伸出主端子22及信号端子23。主端子22是半导体模块20的电源端子。主端子22从半导体封装件21的侧面在水平方向上延伸。水平方向是沿冷却器10的上表面的方向。信号端子23是输入使半导体封装件21所包含的半导体芯片进行通断的信号的端子。信号端子23从半导体封装件21的侧面在水平方向上延伸，向上方弯折。
在半导体封装件21之上设置金属板30。本实施方式的金属板30整体设置于半导体封装件21的正上方。并不限于此，只要金属板30至少具有在半导体封装件21的上表面设置的部分即可。另外，本实施方式的金属板30为平板状。并不限于此，只要金属板30与半导体封装件21的上表面相对的面是平坦面即可。
半导体封装件21的上表面为树脂面，是平面。半导体封装件21的上表面与金属板30的平坦的面接触。
在金属板30之上设置弹簧40。弹簧40例如为碟形弹簧。弹簧40被后述的固定件50从上方按压，由此在与金属板30的上表面垂直的方向上产生弹力。因此，弹簧40通过弹力向半导体封装件21的上表面按压金属板30。弹簧40设置于半导体封装件21的中央部。
半导体装置100具有固定件50。固定件50例如为螺钉。在冷却器10的上表面形成凹部11。在半导体封装件21形成从上表面贯通至背面的贯通孔24。在金属板30形成从上表面贯通至背面的贯通孔31。而且，在弹簧40也形成从上表面贯通至背面的贯通孔41。凹部11、贯通孔24、31、41在俯视观察时重叠。
凹部11、贯通孔24、31、41各自为螺孔。固定件50的头部设置于弹簧40之上。固定件50从弹簧40的上方穿过贯通孔41、31、24而插入至凹部11。固定件50将弹簧40、金属板30和半导体封装件21贯通而达到冷却器10。由此，能够将半导体模块20紧固而固定于冷却器10。
固定件50在被弹簧40施加弹力的状态下，将弹簧40固定于金属板30的上表面。如果通过固定件50将弹簧40紧固，则弹簧40的外周部分按压金属板30。由此，金属板30按压半导体封装件21的上表面。
另外，固定件50由金属形成。金属板30与冷却器10通过固定件50电连接。
图3是实施方式1涉及的半导体模块20的剖视图。半导体模块20具有散热器27、设置于散热器27之上的多个半导体芯片26、设置于散热器27之下的绝缘片材28。绝缘片材28是为了将冷却器10与散热器27电绝缘而设置的。多个半导体芯片26、散热器27及绝缘片材28被树脂覆盖。贯通孔24形成于半导体封装件21的树脂部分。
半导体芯片26的上表面与主端子22通过焊料25进行接合。另外，多个半导体芯片26中的一个与信号端子23通过导线29连接。导线29例如是铝导线。半导体芯片26的下表面与散热器27通过焊料25进行接合。因此，散热器27为半导体芯片26的下表面的电极。散热器27与不同于图3所示的主端子22的其它主端子22通过焊料进行接合。半导体芯片26和主端子22也可以通过导线进行连接。
与信号端子23通过导线29连接的半导体芯片26例如是开关元件。开关元件为IGBT(Insulated Gate Bipolar Transistor)等。在半导体芯片26为IGBT的情况下，发射极及集电极与主端子22电连接。另外，栅极与信号端子23电连接。另一个半导体芯片26例如为FWD(Free Wheeling Diode)。
在本实施方式中，半导体模块20具有多个半导体芯片26。并不限于此，半导体模块20只要具有大于或等于1个半导体芯片26即可。
接下来，对半导体装置100的动作进行说明。如果从信号端子23输入了信号，则半导体芯片26接通。由此，在主端子22流过电流。通过对信号端子23的微弱的电流或电压进行控制，从而控制在与主端子22连接的主电路流动的电流的通断。这里，主电路是形成多个半导体芯片26的电路。
通常在半导体芯片26通电时，产生DC损耗。另外，通常在半导体芯片26进行通断时，产生通断损耗。由于这些损耗，半导体芯片26发热。
冷却器10具有对半导体模块20进行散热的功能。在本实施方式中，使半导体封装件21的冷却面和冷却器10紧密贴合。由此，能够从半导体模块20有效地将热量传导至冷却器10。
而且，在半导体封装件21的冷却面和冷却器10之间涂敷脂状物70。脂状物70例如是含有填充物的导热率高的散热脂。由此，填埋半导体封装件21与冷却器10之间的微小的间隙，能够使散热性提高。
另外，就半导体装置100而言，多个部件层叠。由于温度变化，这些部件各自按照线膨胀系数而重复膨胀及收缩。温度变化例如是根据半导体芯片26的发热或环境温度的变化而产生的。相对于此，在本实施方式中，通过弹簧40的弹力将半导体封装件21按压至冷却器10。因此，能够通过弹簧40的行程而吸收构成半导体装置100的部件的膨胀及收缩。由此，能够从上方稳定地对半导体封装件21进行加压，能够抑制由温度变化引起的脂状物70的泵出。
另外，通过将碟形弹簧用作弹簧40，从而能够抑制厚度并且得到高载荷。也可以将板状弹簧用作弹簧40。通过使用板状弹簧，从而能够提高弹簧40的形状的自由度。
另外，在通过弹簧直接按压树脂面的情况下，局部地对半导体封装件施加大的应力，有可能产生蠕变或裂缝。特别地，如果半导体芯片进行动作而成为高温，则封装树脂有时发生软化。由此，树脂面中的与施加大的应力的弹簧之间的接触部容易产生凹陷。此时，从弹簧向半导体封装件的载荷有可能降低。如果载荷降低，则在半导体封装件的背面设置的脂状物有可能溢出，散热性降低。
相对于此，在本实施方式中弹簧40不与树脂面接触。另外，金属板30的平坦的面对半导体封装件21进行按压。因此，能够防止由弹簧40形成的局部接触。因此，与半导体封装件21被弹簧40直接按压的情况相比，能够对局部地将应力施加于半导体封装件21进行抑制。即，在半导体封装件21的上表面处，能够使载荷均匀化。
这样，在本实施方式中能够对半导体封装件21施加高载荷，并且能够均匀地按压半导体封装件21。因此，能够对在半导体封装件21产生蠕变或裂缝进行抑制。由此，能够确保稳定的加压力，能够抑制脂状物70的泵出。因此，能够对半导体芯片26的温度上升及半导体模块20的热破坏进行抑制。因此，能够确保长期的可靠性。
另外，通过将圆形的碟形弹簧用作弹簧40，从而能够相对于弹簧40的中心各向同性地对金属板30进行加压。因此，能够更平衡地对半导体封装件21进行加压。另外，优选在被金属板30的上表面涵盖在内的范围内使弹簧40的直径大，以使得能够对大的范围进行加压。碟形弹簧的直径例如也可以大于半导体封装件21的上表面的宽度的一半。
另外，半导体芯片26通常以高频率进行大电流的通断。因此，半导体芯片26容易产生电磁噪声。在本实施方式中，能够通过金属板30将由半导体芯片26产生的电磁噪声遮蔽。特别地，金属板30和冷却器10通过固定件50电连接。因此，金属板30与作为机架接地的冷却器10为相同电位。因此，能够得到高遮蔽效果。由此，能够防止在半导体模块20的周围配置的控制基板的误动作。
此外，在不需要电磁噪声的遮蔽效果的情况下，也可以将金属板30与冷却器10电连接。
另外，固定件50也可以是螺钉之外的部件。固定件50只要能够在施加弹力的状态下将弹簧40固定于金属板30的上表面即可。
另外，为了使向半导体封装件21的上表面的载荷均匀化，在保持与主端子22、信号端子23的绝缘距离的范围内，优选金属板30的面积大。另外，为了提高电磁噪声的遮蔽效果，也优选金属板30的面积大。金属板30也可以是将半导体封装件21的上表面中的例如大于或等于90％覆盖。金属板30也可以将半导体封装件21的上表面全部覆盖。
另外，半导体芯片26也可以由宽带隙半导体形成。宽带隙半导体是碳化硅、氮化镓类材料或金刚石。根据本实施方式，在使由耐热性高的宽带隙半导体形成的半导体芯片26进行高温动作的情况下，也能够对树脂的蠕变进行抑制。
这些变形能够适当应用于以下实施方式涉及的半导体装置。此外，由于与实施方式1的共通点多，因此以与实施方式1的区别为中心对以下实施方式涉及的半导体装置进行说明。
实施方式2
图4是实施方式2涉及的半导体装置200的俯视图。就半导体装置200而言，金属板230的构造与实施方式1不同。金属板230为平板状。金属板230具有在半导体封装件21的上表面设置的主要部分234。主要部分234与实施方式1的金属板30对应，被弹簧40按压。
在俯视观察时第1部分232和第2部分233从主要部分234延伸至半导体封装件21的外侧。第1部分232和第2部分233在水平方向上延伸。第1部分232和第2部分233的延伸方向也可以相对于水平方向倾斜。
第1部分232在俯视观察时与主端子22重叠。由此，能够将与向主端子22的通电的通断相伴的电磁噪声遮蔽。特别地，当在金属板230的上方设置控制基板的情况下，能够通过金属板230将从半导体封装件21延伸的主端子22等端子和控制基板隔开。由此，能够对控制基板受到来自主端子22等的电磁噪声的影响进行抑制。
主端子22的与半导体封装件21相反侧的端部在俯视观察时从金属板230凸出。由此，能够防止金属板230妨碍向主端子22的配线。并不限于此，也可以是主端子22整体在俯视观察时被金属板230覆盖。
另外，第2部分233将信号端子23包围。在第2部分233形成开口。信号端子23穿过第2部分233的开口向上方延伸。由此，能够将来自半导体芯片26或主端子22等的电磁噪声遮蔽。因此，能够对信号端子23受到电磁噪声的影响进行抑制。
实施方式3
图5是实施方式3涉及的半导体装置300的俯视图。图6是实施方式3涉及的半导体装置300的剖视图。就半导体装置300而言，金属板330的构造与实施方式1不同。金属板330具有在半导体封装件21的上表面设置的主要部分334。主要部分334为平板状，与实施方式1的金属板30对应。
在俯视观察时，第1部分332和第2部分333从主要部分334延伸至半导体封装件21的外侧。金属板330在主要部分334的外侧向上方弯折。由此，形成第1部分332和第2部分333。第1部分332和第2部分333的上端部各自向外侧弯折。第1部分332和第2部分333的上端部在水平方向上延伸。
第1部分332在俯视观察时与主端子22重叠。由此，能够与实施方式2同样地将来自主端子22的电磁噪声遮蔽。另外，第2部分333将信号端子23包围。由此，与实施方式2同样地，能够对信号端子23受到来自半导体芯片26或主端子22等的电磁噪声的影响进行抑制。
另外，通过使金属板330向上方弯折，能够确保从半导体封装件21延伸的端子和金属板330之间的距离。特别地，能够确保金属板330与主端子22及信号端子23之间的沿面距离。因此，能够对金属板330与主端子22或信号端子23之间的沿面放电进行抑制。这里，通过在与半导体封装件21的端部相比更靠内侧处使金属板330弯折，从而能够将金属板330与主端子22及信号端子23之间的沿面距离确保得大。
另外，半导体装置300具有设置于金属板330的上方的控制基板360。第1部分332从主要部分334向上方延伸，对控制基板360进行支撑。第1部分332是对控制基板360进行支撑的支撑部。控制基板360在第1部分332中的上端部搭载于在水平方向上延伸的部分之上。
在第1部分332埋入双头螺栓362。控制基板360通过双头螺栓362固定于金属板330。根据双头螺栓362，能够进行安装控制基板360时的定位。控制基板360也可以通过双头螺栓362之外的螺栓固定于金属板330。控制基板360的固定方法没有限定。
在控制基板360的上表面安装IC等电子部件361。另外，信号端子23向上方延伸，与控制基板360电连接。控制基板360例如经由信号端子23进行半导体芯片26的通断控制。
在本实施方式中，能够将金属板330用作控制基板360的支撑部件。因此，能够削减用于搭载控制基板360的部件。另外，半导体封装件21及主端子22与控制基板360之间被金属板330隔开。因此，能够对向控制基板360的电磁噪声的影响进行抑制。
另外，例如在对金属板330中的从主要部分334向上方延伸的部分进行按压而对半导体封装件21进行按压的结构中，存在金属板330的弯折部成为支点而在主要部分334的中央部作用向上的力的情况。此时，对半导体封装件21中的与金属板330的弯折部接触的部分施加大的应力，有可能产生蠕变等。
相对于此，在本实施方式中，弹簧40在施加弹力的状态下固定于主要部分334的上表面。弹簧40设置于主要部分334之上，通过弹力向半导体封装件21的上表面按压主要部分334。这样，由于弹簧40仅按压金属板330中的平板状的主要部分334，因此能够使施加于半导体封装件21的应力均匀化。因此，能够对在半导体封装件21产生蠕变或裂缝进行抑制。此外，只要主要部分334与半导体封装件21的上表面相对的面是平坦面，就能够得到本实施方式的效果。
实施方式4
图7是实施方式4涉及的半导体装置400的剖视图。半导体装置400的半导体模块420的构造与实施方式2不同。半导体模块420的半导体封装件421的形状与半导体模块20不同。除此之外，与实施方式2相同。
在半导体封装件421中的设置于金属板230和从半导体封装件421延伸出的端子之间的部分形成台阶421a。在本实施方式中，在半导体封装件421中的主端子22和第1部分232之间及信号端子23和第2部分233之间形成台阶421a。
由此，能够确保金属板230与主端子22及信号端子23之间的沿面距离。因此，能够对金属板230与主端子22或信号端子23之间的沿面放电进行抑制。另外，在本实施方式中，不需要对金属板230进行弯折加工。因此，与实施方式3相比能够以低成本对沿面放电进行抑制。
台阶421a也可以形成于半导体封装件421的外周部整体。另外，也可以仅形成于金属板230和端子之间。另外，台阶421a的形状并不限于图7所示的形状。作为台阶421a的形状，可以采用能够延长金属板230与主端子22及信号端子23之间的沿面距离的任何形状。
实施方式5
图8是实施方式5涉及的半导体装置500的俯视图。半导体装置500具有半导体模块520。半导体模块520与实施方式1的不同点在于，在半导体封装件521的上表面设置有凸起521a。在半导体封装件521的上表面的对角位置设置有两个凸起521a。
另外，半导体装置500具有金属板530。金属板530与实施方式1的不同点在于形成有开口535。开口535形成于与凸起521a对应的位置。
在本实施方式中，通过将凸起521a嵌入至开口535，从而能够进行金属板530的定位。因此，能够容易地进行半导体装置500的组装。
另外，也可以在金属板530的背面设置凸起，在半导体封装件521的上表面设置凹部，由此金属板530和半导体封装件521的上表面进行嵌合。另外，凸起521a及开口535的位置、数量及形状并不限于图8所示的情况。此外，通过设置多个凸起521a，从而能够准确地进行定位。
实施方式6
图9是实施方式6涉及的半导体装置600的俯视图。图10是实施方式6涉及的半导体装置600的剖视图。半导体装置600与实施方式3的不同点在于，在控制基板360的与上表面相反侧的面设置有接地用图案663。其它构造与实施方式3相同。
接地用图案663设置于支撑部即第1部分332之上，与金属板330电连接。因此，接地用图案663经由金属板330与机架接地成为相同电位。因此，通过接地用图案663，能够进一步将半导体芯片26或主端子22所产生的电磁噪声遮蔽。因此，能够对控制基板360受到电磁噪声的影响进行抑制。
实施方式7
图11是实施方式7涉及的半导体装置700的剖视图。半导体装置700与实施方式6的不同点在于，在控制基板360的上表面设置有接地用图案763。电子部件361安装于控制基板360的背面。
控制基板360通过双头螺栓362被固定于金属板330的第1部分332。双头螺栓362将第1部分332、控制基板360及接地用图案763贯通。接地用图案763通过双头螺栓362与金属板330电连接。因此，接地用图案763经由金属板330与机架接地成为相同电位。因此，通过接地用图案763，能够将来自周边设备或配线的电磁噪声遮蔽。因此，能够对控制基板360受到电磁噪声的影响进行抑制。
此外，也可以适当地组合而使用在各实施方式中说明过的技术特征。
标号的说明
10冷却器，11凹部，20半导体模块，21半导体封装件，22主端子，23信号端子，24贯通孔，25焊料，26半导体芯片，30金属板，31贯通孔，40弹簧，41贯通孔，50固定件，70脂状物，100、200半导体装置，230金属板，232第1部分，233第2部分，234主要部分，300半导体装置，330金属板，332第1部分，333第2部分，334主要部分，360控制基板，361电子部件，362双头螺栓，400半导体装置，420半导体模块，421半导体封装件，421a台阶，500半导体装置，520半导体模块，521半导体封装件，521a凸起，530金属板，535开口，600半导体装置，663接地用图案，700半导体装置，763接地用图案

Claims (16)

1.一种半导体装置，其特征在于，具有：
冷却器；
半导体封装件，其设置于所述冷却器的上表面；
金属板，其具有在所述半导体封装件的上表面设置的主要部分；
弹簧，其设置于所述主要部分之上，通过弹力将所述主要部分朝向所述半导体封装件的所述上表面按压；
固定件，其在被所述弹簧施加所述弹力的状态下将所述弹簧固定于所述主要部分的上表面；以及
从所述半导体封装件延伸出的信号端子，
所述主要部分的与所述半导体封装件的所述上表面相对的面是平坦面，
所述金属板在俯视观察时延伸至所述半导体封装件的外侧，将所述信号端子包围。
2.根据权利要求1所述的半导体装置，其特征在于，
所述固定件是将所述弹簧、所述金属板和所述半导体封装件贯通而达到所述冷却器的螺钉，
通过所述螺钉将所述金属板与所述冷却器电连接。
3.一种半导体装置，其特征在于，具有：
冷却器；
半导体封装件，其设置于所述冷却器的上表面；
金属板，其具有在所述半导体封装件的上表面设置的主要部分；
弹簧，其设置于所述主要部分之上，通过弹力将所述主要部分朝向所述半导体封装件的所述上表面按压；
固定件，其在被所述弹簧施加所述弹力的状态下将所述弹簧固定于所述主要部分的上表面；以及
从所述半导体封装件延伸出的主端子，
所述主要部分的与所述半导体封装件的所述上表面相对的面是平坦面，
所述金属板在俯视观察时延伸至所述半导体封装件的外侧，与所述主端子重叠。
4.一种半导体装置，其特征在于，具有：
冷却器；
半导体封装件，其设置于所述冷却器的上表面；
金属板，其具有在所述半导体封装件的上表面设置的主要部分；
弹簧，其设置于所述主要部分之上，通过弹力将所述主要部分朝向所述半导体封装件的所述上表面按压；以及
固定件，其在被所述弹簧施加所述弹力的状态下将所述弹簧固定于所述主要部分的上表面，
所述主要部分的与所述半导体封装件的所述上表面相对的面是平坦面，
所述金属板在所述主要部分的外侧向上方弯折。
5.一种半导体装置，其特征在于，具有：
冷却器；
半导体封装件，其设置于所述冷却器的上表面；
金属板，其具有在所述半导体封装件的上表面设置的主要部分；
弹簧，其设置于所述主要部分之上，通过弹力将所述主要部分朝向所述半导体封装件的所述上表面按压；以及
固定件，其在被所述弹簧施加所述弹力的状态下将所述弹簧固定于所述主要部分的上表面，
所述主要部分的与所述半导体封装件的所述上表面相对的面是平坦面，
在所述半导体封装件中的设置于所述金属板和从所述半导体封装件延伸出的端子之间的部分形成台阶。
6.根据权利要求1至5中任一项所述的半导体装置，其特征在于，
具有在所述金属板的上方设置的控制基板。
7.根据权利要求6所述的半导体装置，其特征在于，
从所述半导体封装件延伸出的端子和所述控制基板被所述金属板隔开。
8.一种半导体装置，其特征在于，具有：
冷却器；
半导体封装件，其设置于所述冷却器的上表面；
金属板，其具有在所述半导体封装件的上表面设置的主要部分；
弹簧，其设置于所述主要部分之上，通过弹力将所述主要部分朝向所述半导体封装件的所述上表面按压；
固定件，其在被所述弹簧施加所述弹力的状态下将所述弹簧固定于所述主要部分的上表面；以及
控制基板，其设置于所述金属板的上方，
所述主要部分的与所述半导体封装件的所述上表面相对的面是平坦面，
所述金属板具有从所述主要部分向上方延伸的支撑部，
所述控制基板被所述支撑部支撑。
9.根据权利要求8所述的半导体装置，其特征在于，
在所述控制基板的与上表面相反侧的面设置接地用图案，
所述接地用图案设置于所述支撑部之上，与所述金属板电连接。
10.根据权利要求8所述的半导体装置，其特征在于，
在所述控制基板的上表面设置接地用图案，
所述控制基板通过螺栓固定于所述支撑部，
所述接地用图案通过所述螺栓与所述金属板电连接。
11.根据权利要求1至5、8中任一项所述的半导体装置，其特征在于，
所述金属板与所述半导体封装件的所述上表面嵌合。
12.根据权利要求1至5、8中任一项所述的半导体装置，其特征在于，
所述弹簧为碟形弹簧。
13.根据权利要求1至5、8中任一项所述的半导体装置，其特征在于，
在所述冷却器和所述半导体封装件之间设置脂状物。
14.根据权利要求1至5、8中任一项所述的半导体装置，其特征在于，
所述半导体封装件由树脂形成。
15.根据权利要求1至5、8中任一项所述的半导体装置，其特征在于，
所述半导体封装件具有半导体芯片，
所述半导体芯片由宽带隙半导体形成。
16.根据权利要求15所述的半导体装置，其特征在于，
所述宽带隙半导体为碳化硅、氮化镓类材料或金刚石。
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