CN114256046B - Plasma processing apparatus and method of operating the same - Google Patents
Plasma processing apparatus and method of operating the same Download PDFInfo
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- CN114256046B CN114256046B CN202011004465.6A CN202011004465A CN114256046B CN 114256046 B CN114256046 B CN 114256046B CN 202011004465 A CN202011004465 A CN 202011004465A CN 114256046 B CN114256046 B CN 114256046B
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- 238000012545 processing Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims description 44
- 239000000758 substrate Substances 0.000 claims abstract description 128
- 239000007921 spray Substances 0.000 claims abstract description 65
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims description 126
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 17
- 239000010410 layer Substances 0.000 claims description 16
- 229910052786 argon Inorganic materials 0.000 claims description 15
- 238000001179 sorption measurement Methods 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 9
- 239000011148 porous material Substances 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 239000012495 reaction gas Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 230000003139 buffering effect Effects 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 claims description 2
- 239000010407 anodic oxide Substances 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 238000009434 installation Methods 0.000 abstract description 4
- 238000003672 processing method Methods 0.000 abstract 1
- 239000002210 silicon-based material Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000009471 action Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a plasma processing device and a substrate processing method, wherein the device comprises the following components: the top of the reaction cavity is provided with an opening, and the inner bottom of the reaction cavity is provided with a base which is used for bearing a substrate to be processed; a mounting substrate seated within the opening; the gas spray head is positioned below the mounting substrate and is arranged opposite to the base; the electrode is positioned between the mounting substrate and the gas spray header; the insulating layers are respectively positioned between the mounting substrate and the electrode and between the gas spray header and the electrode; and the direct current is electrically connected with the electrode so that the gas spray header is adsorbed on the mounting substrate. The invention improves the physical contact between the gas spray header and the subsequent electrode, thereby better controlling the temperature of the gas spray header and reducing the complexity of installation.
Description
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to a plasma processing device and a working method thereof.
Background
With the increasing precision of semiconductor manufacturing technology, integrated circuits have also undergone significant changes, so that the computing performance and storage capacity of computers have rapidly advanced, and peripheral industries have been driven to rapidly develop. The semiconductor industry has also developed at a rate that doubles the number of transistors per 18 months on integrated circuits, as predicted by moore's law. For example: the critical dimensions of transistors are also continually shrinking and the density is continually increasing. The process steps for the fabrication of corresponding integrated circuit chips have also become more complex and more complex, and each process step of fabrication is subject to more stringent standards in terms of stability and uniformity.
In order to ensure the continuous stability of the process of manufacturing integrated circuit chips, the stability of the structure of the semiconductor processing apparatus used therein, in particular, the stability of some critical process components, is required.
For example: the electrode structure of existing common capacitively coupled plasma etchers is a parallel plate structure, the lower electrode is an electrostatic chuck (ESC), and the substrate to be processed is typically placed thereon. The ESC is connected with a cooling device to control wafer temperature in the etching process, and is connected with a radio frequency signal. The upper electrode is a silicon-based gas spray head (Si showhead), which is attached to an aluminum mounting substrate (mountain base) in a physical connection manner through aluminum screws and the like, the outer side of the silicon-based gas spray head is an upper grounding ring (upper ground ring) made of silicon-based materials, the upper electrode is fixed on an aluminum alloy chassis (baseplate) through aluminum screws, the aluminum alloy chassis is fixed on the mounting substrate through a group of aluminum screws, and the mounting substrate is arranged on the upper surface of the cavity.
Therefore, the monocrystalline silicon electrode can provide a silicon environment for etching, pollution of other elements is avoided, the aluminum substrate provides a physical process for the monocrystalline silicon electrode through a plurality of screws, and temperature control is achieved through physical contact. However, due to the difference in expansion coefficient between the aluminum substrate and the monocrystalline silicon electrode, the screw for maintaining contact between the aluminum substrate and the monocrystalline silicon electrode inevitably loosens with the increase of time, so that heat conduction and a direct current radio frequency loop are affected, and the problem of poor substrate qualification rate is caused.
Disclosure of Invention
The invention aims to provide a plasma processing device and a working method thereof, so as to realize the purpose of improving the physical contact between a gas spray head and an electrode, thereby realizing better temperature control and improving the substrate yield.
In order to achieve the above object, the present invention is realized by the following technical scheme:
A plasma processing apparatus, comprising: the top of the reaction cavity is provided with an opening, and the inner bottom of the reaction cavity is provided with a base which is used for bearing a substrate to be processed; a mounting substrate seated within the opening; ; the gas spray head is positioned below the mounting substrate and is arranged opposite to the base; the electrode is positioned between the mounting substrate and the gas spray header; the insulating layers are respectively positioned between the mounting substrate and the electrode and between the gas spray header and the electrode; and the direct current is electrically connected with the electrode so that the gas spray header is adsorbed on the mounting substrate.
Optionally, a plurality of mounting through holes are formed in the mounting substrate; the electrode is provided with a plurality of mounting blind holes, and the mounting through holes are in one-to-one correspondence with the mounting blind holes; and a first fixing piece penetrates through the mounting through hole and stops in the mounting blind hole so as to fixedly connect the mounting substrate and the electrode.
Optionally, the electrode is in a U-shaped structure, the mounting substrate is located inside the electrode, and the side wall of the electrode is connected with the side wall of the mounting substrate by adopting a second fixing piece.
Optionally, the second fixing member is a plurality of first screws, and each first screw penetrates through a side wall of the electrode and stops in the mounting substrate.
Optionally, the mounting substrate has a first surface and a second surface opposite to each other, a plurality of first air holes penetrating through the first surface and the second surface are arranged on the mounting substrate at intervals, a first end of each first air hole is connected to a gas source of the reaction gas, and a second end of each first air hole is communicated with the gas spray head.
Optionally, the method further comprises: the gas buffer piece is arranged above the mounting substrate, forms a closed space with the first surface and is used for buffering the reaction gas introduced from the gas path pipe of the gas source; a heater disposed around a periphery of the gas buffer; and a graphite heat conducting sheet is arranged between the heater and the mounting substrate, and heat generated by the heater is conducted to the gas spray head through the graphite heat conducting sheet, the mounting substrate and the electrode so as to control the temperature of the gas spray head.
Optionally, the electrode has relative third surface and fourth surface, the second surface of mounting substrate with the third surface contacts, the electrode is last to be provided with a plurality of second gas pocket that runs through third surface and fourth surface at intervals, first gas pocket with the setting of second gas pocket one-to-one, every second gas pocket's one end with the second end intercommunication of first gas pocket, its other end with the gas shower intercommunication.
Optionally, the method further comprises: the upper grounding ring is provided with an annular step at the inner edge, the gas spray header is positioned in the upper grounding ring, the edge of the gas spray header is carried on the annular step, and the gas spray header is fixed by fixing the upper grounding ring on the electrode.
Optionally, a plurality of first through holes are formed in the edge of the electrode at intervals, a plurality of blind holes are formed in the outer edge of the upper grounding ring at intervals, and the first through holes are in one-to-one correspondence with the blind holes.
Optionally, the method further comprises: and the second screws penetrate through the first through holes and stop in the blind holes.
Optionally, the upper grounding ring further includes a protruding portion, the protruding portion is located on the annular step, a recess is formed in the gas shower head, and the protruding portion is matched with the recess to achieve alignment between the protruding portion and the recess.
Optionally, the method further comprises: and each gasket is positioned between the second screw and the mounting substrate and is respectively contacted with the second screw and the second surface of the mounting substrate.
Optionally, the surface of the mounting substrate is coated with an anodic oxidation and/or yttrium oxide coating except for the surface of the contact surface contacted with the gasket; and anodic oxidation and/or yttrium oxide coating layers are coated in the pore walls of all the first pores.
Optionally, the surface of the electrode and the pore walls of all the second pores are coated with an anodic oxidation and/or yttrium oxide coating; the anodized and/or yttria coating is the insulating layer.
Optionally, the surface of the annular step of the upper ground ring is coated with an anodized and/or yttria coating.
Optionally, the method further comprises: the electrode connector is arranged on one side of the electrode, and the flange is arranged on the side wall of the reaction cavity; the electrode joint is connected with the direct current power supply arranged outside the reaction cavity through the flange.
Optionally, the thickness range of the gas spray header is 1 mm-2 mm.
Optionally, the materials of the mounting substrate and the electrode include: an aluminum alloy.
Optionally, the insulating layer is located between the gas shower head and the mounting substrate, and the electrode is buried in the insulating layer.
In another aspect, the present invention also provides a working method of a plasma processing apparatus, including: and providing a voltage in a preset range for the electrode through the direct current power supply, and accumulating charges between the electrode and the mounting substrate and between the electrode and the gas spray header to generate adsorption force so as to attach and fix the mounting substrate, the electrode and the gas spray header.
Optionally, before the direct current power supply is used for energizing the electrode, the method further comprises: moving a substrate to be treated into the reaction cavity; argon is introduced into the reaction cavity, and the argon is dissociated into argon plasma, so that a direct current loop consisting of a mounting substrate, an upper grounding ring, the argon plasma, a gas spray head and an electrode is formed;
Optionally, after the voltage of the preset range is provided to the electrode by the dc power supply, the method further includes: delivering a process gas into the reaction chamber and dissociating the process gas into a plasma; and processing the substrate to be processed by adopting plasma.
Compared with the prior art, the invention has at least one of the following advantages:
In the plasma processing device provided by the invention, the direct current is supplied to the electrode through the direct current power supply, so that charges can be accumulated on the surfaces between the mounting substrate and the electrode and between the electrode and the gas spray head, and a strong electrostatic adsorption force is generated, so that the mounting substrate and the electrode and between the electrode and the gas spray head are bonded, the adsorption force is uniform, and the attachment between the mounting substrate and the electrode and between the electrode and the gas spray head is firm. Through the voltage value of the external direct current power supply of control, can guarantee to have sufficient electrostatic adsorption force between the three to make and install the inseparable laminating between base plate, electrode and the gas shower head, make the heat conduction between the three better, thereby can realize the better temperature control to the gas shower head.
Further, since the mounting substrate and the electrode are both made of aluminum alloy, no deformation difference is generated between the mounting substrate and the electrode.
Because the gas spray header and the electrode are connected in an electrostatic adsorption mode, the gas spray header is not required to be fixed by adopting a screw between the mounting substrate and the gas spray header, namely, the gas spray header does not need to be additionally processed to form a mechanical fixing structure, the gas spray header can be made of a thinner silicon-based material sheet, and the thickness range of the gas spray header is specifically 1-2 mm, so that the gas spray header provided by the invention has better flexibility. Even under the condition that the mounting substrate and the electrode deform in the temperature changing process, the mounting substrate and the electrode can be clung to the electrode under the action of electrostatic adsorption force so as to ensure the stability of heat conduction. The gas spray header adopts a thinner silicon-based material sheet, so that the utilization rate of the silicon-based material can be improved, and the preparation cost of the upper electrode is reduced.
The side wall of the electrode and the side wall of the mounting substrate are fixedly connected by adopting the second fixing piece, namely the electrode is U-shaped, and the uniqueness of alignment of the mounting substrate and the air holes formed in the electrode is ensured through the arrangement of the screw hole positions of the side wall.
The upper grounding ring provided by the invention further comprises a protruding part, wherein the protruding part is positioned on the annular step, a concave part is arranged on the gas spraying head, and the protruding part is matched with the concave part. Thereby, the positioning of the gas spray header is realized, and the alignment of the gas holes of the gas spray header and the second gas holes on the electrode is ensured.
Drawings
FIG. 1 is a schematic diagram of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic top view of a top ground ring of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of an upper grounding ring of a plasma processing apparatus according to an embodiment of the present invention at a protrusion position;
FIG. 4 is a schematic cross-sectional view of an upper ground ring of a plasma processing apparatus according to an embodiment of the present invention, wherein the upper ground ring is not provided with a protrusion;
FIG. 5 is a schematic view of a plasma processing apparatus according to another embodiment of the present invention;
fig. 6 is a schematic structural view of an electrode of a plasma processing apparatus according to another embodiment of the present invention;
fig. 7 is a flowchart of a method for operating a plasma processing apparatus according to an embodiment of the present invention.
Detailed Description
The following describes a plasma processing apparatus and a method of operating the same in further detail, with reference to fig. 1-7 and detailed description. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.
Fig. 1 is a schematic structural diagram of a plasma processing apparatus according to an embodiment of the invention.
Referring to fig. 1, the plasma processing apparatus includes: a reaction chamber 200 having an opening at the top and a susceptor 100 disposed at the bottom thereof, the susceptor 100 being for carrying a substrate 101 to be processed; a mounting substrate 501 seated within the opening; a first sealing structure 601 is disposed between the mounting substrate 501 and the opening, and is used for sealing the reaction chamber 200. The electrode 502 is located below the mounting substrate 501; a gas shower head 300 disposed below the electrode 502 and opposite to the susceptor 100; a first insulating layer 511 located between the mounting substrate 501 and the electrode 502; a second insulating layer 512 located between the electrode 502 and the gas showerhead 300; the dc power supply 940 is electrically connected to the electrode 502 to collect charges between the mounting substrate 501 and the electrode 502 and between the electrode 502 and the gas shower head 300, thereby generating an adsorption force.
The gas buffer 800 is disposed above the mounting substrate 501, and a second sealing structure 602 is disposed between the gas buffer 800 and the mounting substrate 501, so that the gas buffer 800 and the first surface of the mounting substrate 501 form a closed space for buffering the reaction gas introduced from the gas channel of the gas source; a heater 910 disposed around the periphery of the gas buffer 800; a heat conducting sheet 920 is disposed between the heater 910 and the mounting substrate 501, and heat generated by the heater 910 is conducted to the gas shower head 300 through the heat conducting sheet 920, the mounting substrate 501 and the electrode 502, so as to control the temperature of the gas shower head 300.
In this embodiment, the electrode 502 has a U-shaped structure, specifically, the electrode 502 includes a second bottom plate and a sidewall plate extending upward from an edge of the second bottom plate, and the mounting substrate 501 includes: the device comprises a first bottom plate and a bearing plate extending outwards from the edge of the first bottom plate, wherein the bearing plate is borne on the top of the reaction cavity 200 around the opening, the mounting substrate 501 is positioned inside the electrode 502, and the side wall of the electrode 502 is fixedly connected with the side wall of the mounting substrate 501 by adopting a second fixing piece. Optionally, the second fixing member is a plurality of first screws 701, and each first screw 701 penetrates through a side wall of the electrode 502 and stops in the mounting substrate 501, that is, the fixing and mounting between the side wall plate and the first bottom plate are achieved through the first screws 701. The mounting substrate 501 is further provided with a second surface opposite to the first surface, a plurality of first air holes 503 penetrating the first surface and the second surface are disposed on the mounting substrate 501 at intervals, a first end of each first air hole 503 is connected to a gas source of the reaction gas (i.e. connected to the gas buffer 800 and the first surface to form a closed space), and a second end of each first air hole is communicated with the gas shower head 300.
The electrode 502 is provided with a third surface and a fourth surface which are opposite to each other, the second surface of the mounting substrate 501 is in contact with the third surface, a plurality of second air holes 504 penetrating through the third surface and the fourth surface are arranged on the electrode 502 at intervals, the first air holes 503 are arranged in one-to-one correspondence with the second air holes 504, one end of each second air hole 504 is communicated with the second end of the first air hole 503, and the other end of each second air hole 504 is communicated with the gas shower head 300. It can be seen that the electrode provided in this embodiment is U-shaped, and the uniqueness of alignment between the mounting substrate 501 and the air hole provided by the electrode 502 is ensured by the arrangement of the positions of the screw holes on the side wall (side wall plate).
With continued reference to fig. 2 to 4, the present embodiment further includes: the upper grounding ring 400, an annular step 4003 is provided at the inner edge of the upper grounding ring 400, the gas shower head 300 is located inside the upper grounding ring 400, and the edge thereof is mounted on the annular step 4003, and the gas shower head 300 is fixed by fixing the upper grounding ring 400 on the electrode 502.
The upper grounding ring 400 further comprises a protruding portion 4002, the protruding portion 4002 is located on the annular step 4003, a concave portion is formed on the gas shower head 300, and the protruding portion 4002 is matched with the concave portion to achieve alignment between the protruding portion 4002 and the concave portion.
A plurality of first through holes are formed in the edge of the electrode 502 at intervals, a plurality of blind holes 4001 are formed in the outer edge of the upper grounding ring 400 at intervals, and the first through holes are arranged in one-to-one correspondence with the blind holes 4001. The embodiment further includes: a plurality of second screws 702, each of the second screws 702 extending through the first through hole and stopping within the blind hole 4001.
Referring back to fig. 1, the method further includes: a plurality of spacers 703, each spacer 703 is located between the second screw 702 and the mounting substrate 501 and is respectively in contact with the second screw 702 and the second surface of the mounting substrate 501, so as to form a dc circuit when the plasma processing apparatus is operated subsequently.
With continued reference to fig. 1, the method further includes: an electrode tab 930 and a flange 900, the electrode tab 930 being disposed at one side of the electrode 502, the flange 900 being disposed on a sidewall of the reaction chamber 200; the electrode tab 930 is connected to the dc power supply provided outside the reaction chamber 200 through the flange 900.
The materials of the mounting substrate 501 and the electrode 502 include, but are not limited to, aluminum alloy.
The surface of the mounting substrate 501 is coated with an anodized and/or yttria coating except for the surface of the contact surface contacting the pad 703; and all of the walls of the first gas holes 503 are coated with an anodized and/or yttria coating. The surface of the electrode 502 and the walls of all the second pores 504 are coated with an anodized and/or yttria coating. The surface of the annular step 4003 of the upper ground ring 400 is coated with an anodized and/or yttria coating, thereby forming the first insulating layer and the second insulating layer. The thickness range of the gas spray header is 1 mm-2 mm. And preparing the silicon-based material of the gas spray header for double-sided polishing.
Therefore, the embodiment can ensure that the three parts have enough electrostatic adsorption force by controlling the voltage value of the external direct current power supply, thereby ensuring that the heat conduction of the upper electrode is always in a stable state. Therefore, the mounting substrate, the electrode and the gas spray header can be tightly attached, and the heat conduction among the mounting substrate, the electrode and the gas spray header is good, so that the gas spray header can be well controlled in temperature. .
Second, in this embodiment, since the mounting substrate and the electrode are both made of aluminum alloy, no deformation difference is generated between the two. For the gas spray head, no additional processing is needed to form a mechanical fixing structure, and the thickness of the gas spray head ranges from 1mm to 2mm, namely, the gas spray head adopts a thinner silicon-based material sheet, and has better flexibility. Even under the condition that the mounting substrate and the electrode deform in the temperature changing process, the mounting substrate and the electrode can be clung to the electrode under the action of electrostatic adsorption force so as to ensure the stability of heat conduction. The gas spray header adopts a thinner silicon-based material sheet, so that the utilization rate of the silicon-based material can be improved, and the preparation cost of the upper electrode is reduced.
The side wall of the electrode and the side wall of the mounting substrate are fixedly connected by adopting a second fixing piece, namely the electrode is U-shaped, and the uniqueness of alignment of the mounting substrate and the air holes formed in the electrode is ensured through arrangement of screw hole positions of the side wall.
The upper grounding ring provided by the embodiment further comprises a protruding portion, the protruding portion is located on the annular step, a concave portion is arranged on the gas spraying head, and the protruding portion is matched with the concave portion. Thereby, the positioning of the gas spray header is realized, and the alignment of the gas holes of the gas spray header and the second gas holes on the electrode is ensured.
To sum up, in the embodiment shown in fig. 1, the entire upper electrode mounting process is performed: firstly, aligning a thin gas spray head with a protruding part on the upper grounding ring, placing the gas spray head in the upper grounding ring, fixing the upper grounding ring on an electrode through a second screw, finally placing a gasket on the second screw of the upper grounding ring, hoisting a mounting substrate on the electrode through a first screw of a side wall, and connecting a direct current power supply connector of the mounting substrate with an electrode connector on a flange. The whole process has alignment at each step, which improves the installation accuracy and ensures the alignment of the final air holes. On the other hand, all mounting surfaces are arranged on one side of the mounting substrate, and a thin gas spray header is adopted, so that compared with a traditional gas spray header, the mounting difficulty can be greatly reduced without mechanical hoisting corresponding machining.
Fig. 5 is a schematic structural diagram of a plasma processing apparatus according to another embodiment of the present invention.
Referring to fig. 5, in the present embodiment, the electrode 502 has a flat plate structure, and the mounting substrate 501 is provided with a plurality of mounting through holes; the electrode 502 is provided with a plurality of mounting blind holes, and the mounting blind holes are in one-to-one correspondence with the mounting through holes; the first fixing member 711 penetrates the mounting through hole and stops in the mounting blind hole to fixedly connect the mounting substrate 501 and the electrode 502. The first fixing member 711 may be a screw, but is not limited thereto.
Fig. 6 is a schematic structural diagram of an electrode of a plasma processing apparatus according to another embodiment of the present invention.
Referring to fig. 6, in the present embodiment, the insulating layer 521 is located between the mounting substrate 501 and the gas shower head 300, and the electrode 522 is buried in the insulating layer 521.
The electrode 522 is embedded within the insulating layer 521. In this embodiment, the insulating layer 521 is thinner to allow the mounting substrate 501 to better transfer heat to the gas showerhead 300. The insulating layer 521 further includes a screw 721, and the screw 721 is screwed into the mounting substrate 501 to fix the electrode 522 to the mounting substrate 501. The mounting manner of the upper ground ring and the insulating layer 521 is the same as that of the upper ground ring and the electrode in the embodiment of fig. 1, and will not be described here.
Accordingly, as shown in fig. 7, the present invention also provides a method of operating a plasma processing apparatus,
The method is performed in a plasma processing apparatus as described above, the method comprising the steps of: step S1, a substrate to be processed is moved into the reaction cavity; argon is introduced into the reaction cavity, and the argon is dissociated into argon plasma, so that a direct current loop consisting of a mounting substrate, an upper grounding ring, the argon plasma, a gas spray head and an electrode is formed; step S2, providing a voltage in a preset range for the electrode through the direct-current power supply, and accumulating charges between the electrode and the mounting substrate and between the electrode and the gas spray header to generate adsorption force so as to attach and fix the mounting substrate, the electrode and the gas spray header; s3, conveying process gas into the reaction cavity, and dissociating the process gas into plasma; and processing the substrate to be processed by adopting plasma.
In summary, in the plasma processing apparatus provided in this embodiment, charges are accumulated on the surfaces between the electrode and the gas shower head through between the mounting substrate and the electrode, so that a strong electrostatic adsorption force is generated, so that between the mounting substrate and the electrode, between the electrode and the gas shower head, a fixation is performed, and the adsorption force is more uniform, so that the attachment among the mounting substrate, the electrode and the gas shower head is very firm. By controlling the voltage value of the external direct current power supply, the sufficient electrostatic adsorption force among the three can be ensured, so that the heat conduction of the upper electrode can be ensured to be always in a stable state. Therefore, the physical contact between the gas spray header and the subsequent electrode can be improved, and better temperature control is realized. The electrostatic adsorption mode is adopted to realize the installation between the substrate and the electrode, and the electrode and the gas spray header are fixed, so that the installation complexity can be reduced.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate describing the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
In the description of the present invention, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "secured" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
In the present invention, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (17)
1. A plasma processing apparatus, comprising:
the top of the reaction cavity is provided with an opening, and the inner bottom of the reaction cavity is provided with a base which is used for bearing a substrate to be processed;
a mounting substrate seated within the opening;
the gas spray head is positioned below the mounting substrate and is arranged opposite to the base;
The electrode is positioned between the mounting substrate and the gas spray header, the mounting substrate is fixedly connected with the electrode, and the mounting substrate and the electrode are made of aluminum alloy;
The insulating layers are respectively positioned between the mounting substrate and the electrode and between the gas spray header and the electrode, and the insulating layers are anodic oxidation and/or yttrium oxide coatings;
The direct-current power supply is electrically connected with the electrode so that the gas spray header is adsorbed on the mounting substrate;
The gas shower head is positioned in the upper grounding ring, the edge of the gas shower head is carried on the annular step, a plurality of first through holes are formed in the edge of the electrode at intervals, a plurality of blind holes are formed in the outer edge of the upper grounding ring at intervals, and the first through holes are arranged in one-to-one correspondence with the blind holes;
The second screws penetrate through the first through holes and stop in the blind holes, and the upper grounding ring is fixed on the electrode to fix the gas spray head;
When argon is introduced into the reaction cavity and dissociated into argon plasma, a direct current loop consisting of the mounting substrate, the upper grounding ring, the argon plasma, the gas spray head and the electrode can be formed in the plasma processing device.
2. The plasma processing apparatus according to claim 1, wherein the mounting substrate is provided with a plurality of mounting through holes;
the electrode is provided with a plurality of mounting blind holes, and the mounting through holes are in one-to-one correspondence with the mounting blind holes;
And a first fixing piece penetrates through the mounting through hole and stops in the mounting blind hole so as to fixedly connect the mounting substrate and the electrode.
3. The plasma processing apparatus according to claim 1, wherein the electrode has a U-shaped structure, the mounting substrate is positioned inside the electrode, and a second fixing member is used to connect a side wall of the electrode with a side wall of the mounting substrate.
4. The plasma processing apparatus as recited in claim 3 wherein said second fixture is a plurality of first screws, each of said first screws extending through a sidewall of said electrode and terminating in said mounting substrate.
5. The plasma processing apparatus of claim 1 wherein the mounting substrate has opposite first and second surfaces, the mounting substrate being provided with a plurality of first gas holes spaced apart from each other and extending through the first and second surfaces, a first end of each of the first gas holes being coupled to a source of reactant gas and a second end of each of the first gas holes being in communication with the gas showerhead.
6. The plasma processing apparatus according to claim 5, further comprising: the gas buffer piece is arranged above the mounting substrate, forms a closed space with the first surface and is used for buffering the reaction gas introduced from the gas path pipe of the gas source;
A heater disposed around a periphery of the gas buffer; a graphite heat conducting sheet is arranged between the heater and the mounting substrate,
The heat generated by the heater is conducted to the gas spray head through the graphite heat conducting sheet, the mounting substrate and the electrode, so that the temperature of the gas spray head is controlled.
7. The plasma processing apparatus according to claim 5, wherein the electrode has a third surface and a fourth surface opposite to each other, the second surface is in contact with the third surface, a plurality of second air holes penetrating the third surface and the fourth surface are provided at intervals on the electrode, the first air holes are provided in one-to-one correspondence with the second air holes, one end of each of the second air holes is communicated with the second end of the first air hole, and the other end is communicated with the gas shower head.
8. The plasma processing apparatus of claim 7 wherein said upper ground ring further comprises a protrusion, said protrusion being positioned on said annular step, said gas showerhead having a recess, said protrusion matching said recess to achieve alignment therebetween.
9. The plasma processing apparatus according to claim 8, further comprising: and each gasket is positioned between the second screw and the mounting substrate and is respectively contacted with the second screw and the second surface of the mounting substrate.
10. The plasma processing apparatus according to claim 9, wherein the surface of the mounting substrate is coated with an anodized and/or yttria coating except for a surface of a contact surface with the gasket; and anodic oxidation and/or yttrium oxide coating layers are coated in the pore walls of all the first pores.
11. The plasma processing apparatus according to claim 10, wherein the surface of the electrode and the walls of all the second pores are coated with an anodic oxide and/or yttria coating.
12. The plasma processing apparatus of claim 11 wherein the surface of the annular step of the upper ground ring is coated with an anodized and/or yttria coating.
13. The plasma processing apparatus according to claim 1, further comprising: the electrode connector is arranged on one side of the electrode, and the flange is arranged on the side wall of the reaction cavity; the electrode joint is connected with the direct current power supply arranged outside the reaction cavity through the flange.
14. The plasma processing apparatus according to claim 1, wherein the thickness of the gas shower head is in a range of 1mm to 2mm.
15. A method of operating a plasma processing apparatus as claimed in any one of claims 1 to 14, comprising:
the electrodes are supplied with a voltage of a preset range by means of a direct current power supply,
Charges are accumulated between the electrode and the mounting substrate and between the electrode and the gas shower head to generate adsorption force, so that the mounting substrate, the electrode and the gas shower head are attached and fixed.
16. A method of operating a plasma processing apparatus as recited in claim 15, wherein,
Before energizing the electrode with the dc power supply, further comprising:
a substrate to be treated is moved into the reaction cavity and is placed on the base;
Argon is introduced into the reaction cavity, and the argon is dissociated into argon plasma, so that a direct current loop consisting of the mounting substrate, the upper grounding ring, the argon plasma, the gas spray head and the electrode is formed.
17. The method of operating a plasma processing apparatus according to claim 15, further comprising, after the voltage of the preset range is supplied to the electrode by the dc power supply:
Delivering a process gas into the reaction chamber and dissociating the process gas into a plasma;
and processing the substrate to be processed by adopting plasma.
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| CN202011004465.6A CN114256046B (en) | 2020-09-22 | 2020-09-22 | Plasma processing apparatus and method of operating the same |
| TW110129044A TWI817173B (en) | 2020-09-22 | 2021-08-06 | Plasma treatment device and working method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103177912A (en) * | 2011-12-20 | 2013-06-26 | 中微半导体设备(上海)有限公司 | Stacked assembly for plasma reaction chamber and production method thereof |
| CN104737274A (en) * | 2012-10-26 | 2015-06-24 | 应用材料公司 | PECVD apparatus and process |
| CN110993476A (en) * | 2018-10-02 | 2020-04-10 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4456218B2 (en) * | 2000-03-16 | 2010-04-28 | キヤノンアネルバ株式会社 | Plasma processing equipment |
| US6786175B2 (en) * | 2001-08-08 | 2004-09-07 | Lam Research Corporation | Showerhead electrode design for semiconductor processing reactor |
| JP4082720B2 (en) * | 2001-09-10 | 2008-04-30 | キヤノンアネルバ株式会社 | Substrate surface treatment equipment |
| JP2005019606A (en) * | 2003-06-25 | 2005-01-20 | Anelva Corp | Apparatus for fixing a gas shower head or target plate to an electrode in a plasma processing apparatus |
| JP4513329B2 (en) * | 2004-01-16 | 2010-07-28 | 東京エレクトロン株式会社 | Processing equipment |
| US7712434B2 (en) * | 2004-04-30 | 2010-05-11 | Lam Research Corporation | Apparatus including showerhead electrode and heater for plasma processing |
| KR101180125B1 (en) * | 2004-06-21 | 2012-09-05 | 도쿄엘렉트론가부시키가이샤 | Plasma processing device and method |
| JP5116983B2 (en) * | 2006-03-30 | 2013-01-09 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
| US8375890B2 (en) * | 2007-03-19 | 2013-02-19 | Micron Technology, Inc. | Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers |
| US8419854B2 (en) * | 2007-04-17 | 2013-04-16 | Ulvac, Inc. | Film-forming apparatus |
| US20100184290A1 (en) * | 2009-01-16 | 2010-07-22 | Applied Materials, Inc. | Substrate support with gas introduction openings |
| JP5683822B2 (en) * | 2009-03-06 | 2015-03-11 | 東京エレクトロン株式会社 | Plasma processing apparatus and electrode for plasma processing apparatus |
| US20140141619A1 (en) * | 2012-11-19 | 2014-05-22 | Tokyo Electron Limited | Capacitively coupled plasma equipment with uniform plasma density |
| JP5801374B2 (en) * | 2013-12-27 | 2015-10-28 | 株式会社日立国際電気 | Semiconductor device manufacturing method, program, and substrate processing apparatus |
| JP6169040B2 (en) * | 2014-05-12 | 2017-07-26 | 東京エレクトロン株式会社 | Upper electrode structure of plasma processing apparatus, plasma processing apparatus, and method of operating plasma processing apparatus |
| JP6339866B2 (en) * | 2014-06-05 | 2018-06-06 | 東京エレクトロン株式会社 | Plasma processing apparatus and cleaning method |
| JP6570390B2 (en) * | 2015-09-24 | 2019-09-04 | 東京エレクトロン株式会社 | Temperature control apparatus and substrate processing apparatus |
| JP6607795B2 (en) * | 2016-01-25 | 2019-11-20 | 東京エレクトロン株式会社 | Substrate processing equipment |
| JP7089881B2 (en) * | 2018-01-10 | 2022-06-23 | 東京エレクトロン株式会社 | Film formation method |
-
2020
- 2020-09-22 CN CN202011004465.6A patent/CN114256046B/en active Active
-
2021
- 2021-08-06 TW TW110129044A patent/TWI817173B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103177912A (en) * | 2011-12-20 | 2013-06-26 | 中微半导体设备(上海)有限公司 | Stacked assembly for plasma reaction chamber and production method thereof |
| CN104737274A (en) * | 2012-10-26 | 2015-06-24 | 应用材料公司 | PECVD apparatus and process |
| CN110993476A (en) * | 2018-10-02 | 2020-04-10 | 东京毅力科创株式会社 | Plasma processing apparatus and plasma processing method |
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