CN114243310B - Optical transparent broadband high-wave-absorbing-rate wave absorber - Google Patents
Optical transparent broadband high-wave-absorbing-rate wave absorber Download PDFInfo
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 115
- 230000003287 optical effect Effects 0.000 title claims abstract description 17
- 238000010521 absorption reaction Methods 0.000 claims abstract description 40
- 238000005452 bending Methods 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 141
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 61
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 11
- 239000007787 solid Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000011229 interlayer Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 244000126211 Hericium coralloides Species 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- -1 polyethylene terephthalate Polymers 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000011247 coating layer Substances 0.000 claims 1
- 230000009467 reduction Effects 0.000 abstract description 21
- 238000002834 transmittance Methods 0.000 abstract description 4
- 238000004088 simulation Methods 0.000 description 28
- 230000000694 effects Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000005530 etching Methods 0.000 description 8
- 230000010287 polarization Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 101500023488 Lithobates catesbeianus GnRH-associated peptide 1 Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000035899 viability Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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Abstract
The invention discloses an optical transparent broadband high-wave-absorbing-rate wave absorber, which consists of N multiplied by M wave absorber units arranged in an array; the wave absorber unit comprises a top PET medium layer, a middle PET medium layer, a bottom PET medium layer and a middle air layer; each dielectric layer comprises a dielectric plate and a patterned ITO resistive film layer printed on the dielectric plate, and the bottom PET dielectric layer also comprises a bottom ITO resistive film layer; the ITO resistive film layer pattern of the top PET dielectric layer is of a square bending ring structure; the patterns of the ITO resistance film layer of the middle PET medium layer are regular octagon rings and internal interdigital structures; the pattern of the bottom PET medium layer ITO resistance film layer is of a square ring structure; the wave absorber unit realizes broadband and high-efficiency wave absorption and high light transmittance in a broadband through superposition of multiple frequency points of structures with different sizes, and has good RCS reduction performance.
Description
Technical Field
The invention belongs to the technical field of electromagnetic fields and microwaves, and particularly relates to an optical transparent broadband high-wave-absorption wave absorber. The invention has the optical transparent characteristic, realizes the broadband high-efficiency absorption of electromagnetic waves, and can be used for carrier platforms and antenna systems with low scattering requirements.
Background
With the continuous development of radar detection technology, the battlefield viability of stealth targets is severely threatened. To improve the stealth performance of the target, the scattering property of the target needs to be studied, and a key indicator for measuring the scattering property of the target is Radar Cross Section (RCS), wherein a lower RCS means better stealth performance. In recent years, electromagnetic supersurfaces have been attracting attention from researchers because of their ability to flexibly control electromagnetic waves, and research on achieving RCS reduction using electromagnetic supersurfaces has also been under great development.
The super-surface wave absorber converts the energy of the incident electromagnetic wave into other forms of energy, thereby absorbing the electromagnetic wave in the working frequency band of the wave absorber. Compared with the traditional material type wave absorber, the super-surface wave absorber has the characteristics of light and thin structure, low cost, high absorptivity and the like. In order to expand the working frequency band of the super-surface wave absorber and improve the wave absorbing performance of the super-surface wave absorber, researchers mainly adopt means such as multilayer or three-dimensional structural design, adding matching layers, adding lumped elements and the like.
The university of martial arts discloses a transparent metamaterial absorber which is formed by placing transparent metamaterial units on a transparent reflection back plate and periodically embedding arrays into a transparent flat plate matrix in a patent of 'a vertical transparent metamaterial absorber' (application number: CN201610079121.9, application publication number: CN 105552566A), but the excellent wave absorbing property of the absorber is limited to the condition of incidence of electromagnetic waves with specific polarization. The university of Harbin industry discloses an ultra-wideband metamaterial wave absorber with low RCS (radio frequency standard) and insensitive polarization for visible light transmission (application number: 202010358422.1, application publication number: CN 111430926A), which sequentially comprises a patterned impedance film layer, a first transparent substrate, a middle transparent medium layer, a second transparent substrate and a transparent conductive film from top to bottom, wherein the wave absorber can realize the absorption rate of more than 90% in the relative bandwidth of 125% while the visible light transparency is not lower than 75%, and has the characteristic of insensitive polarization. The wave absorber only adopts a single-layer patterned impedance film layer, and the absorption bandwidth and the absorption rate of the wave absorber can be further improved by using a multi-layer impedance film structure.
Chen Jianlin et al in the paper "Double-Layer Circuit Analog Absorbers Based on Resistor-Loaded Square-Loop designs" published on pages 591-595 of journal 17, volume 4, in IEEE ANTENNAS AND WIRELESS Propagation Letters, in 2018, proposed a super-surface absorber, which was designed by adding lumped resistance and increasing the dielectric matching layer by superposition of three layers, achieved effective absorption of electromagnetic waves in the ultra-wide band of 1.64-17.6 GHz, but the absorber of the multilayer structure did not have the property of optical transparency.
At present, the problems of narrow band, low efficiency, single function and the like to be solved still exist in the work of reducing RCS by utilizing the super-surface wave absorber. The wave absorber which has the excellent performances of high light transmittance, wide absorption frequency band, high absorptivity, low profile, low radar cross section and the like is designed, and has high research and application values.
Disclosure of Invention
The invention aims to provide an optical transparent broadband high-wave-absorption wave absorber, which aims at solving the problem that the conventional wave absorber is difficult to realize broadband high-efficiency wave absorption and high light transmittance.
The invention is realized by the following technical scheme.
The invention provides an optical transparent broadband high-wave-absorbing-rate wave absorber, which consists of N multiplied by M wave absorber units arranged in an array, wherein N is more than or equal to 10 columns, and M is more than or equal to 10 rows;
the wave absorber unit comprises a top PET medium layer, a middle PET medium layer and a bottom PET medium layer which are distributed from top to bottom, and an air layer is arranged between the three medium layers;
Each dielectric layer comprises a dielectric plate and a patterned ITO resistive film layer printed on the dielectric plate, and the bottom PET dielectric layer further comprises an unetched ITO resistive film layer;
the ITO resistive film layer pattern of the top PET dielectric layer is of a square bending ring structure; the patterns of the ITO resistance film layer of the middle PET medium layer are regular octagon rings and internal interdigital structures; the pattern of the bottom PET medium layer ITO resistance film layer is of a square ring structure;
the wave absorber unit is overlapped through multiple frequency points of structures with different sizes, so that high wave absorption rate in a wide frequency band is realized.
By combining the technical scheme provided by the above, the square bending ring structure of the top PET dielectric layer is formed by symmetrically bending three periods at equal intervals on each side of the square, and the width of the inner bending side is smaller than that of the side bending side.
In combination with the technical scheme provided by the above, the regular octagon ring and the internal interdigital structure of the middle PET dielectric layer comprise external regular octagon structures, the interdigital structures distributed in a cross shape are symmetrically distributed on the inner side and the outer side of the regular octagon, the middle part of the interdigital structure is a solid body, a plurality of comb teeth are respectively extended in four directions of the solid body, a plurality of comb teeth are inwards extended on four sides of the regular octagon structure, and the comb teeth are mutually inserted to be interdigital.
By combining the technical scheme provided above, the width and the extension length of each comb tooth are the same.
By combining the technical scheme provided above, the thickness of the bottom PET medium layer is larger than that of the middle PET medium layer is larger than that of the top PET medium layer.
By combining the technical scheme provided by the above, the thickness of the air layer between the top PET medium layer and the middle PET medium layer is larger than that of the air layer between the middle PET medium layer and the bottom PET medium layer.
According to the technical scheme, the supporting frame is prepared around the interlayer by the air layer through the transparent composite material, and air is filled in the supporting frame.
By combining the technical scheme provided by the above, the patterned ITO resistive film and the unetched ITO resistive film are obtained by coating a layer of indium tin oxide ITO coating on a transparent organic substrate material through a sputtering process and then carrying out high-temperature annealing treatment.
By combining the technical scheme provided above, the ITO resistive film layer is a polyethylene terephthalate film.
The structure of the absorber of the invention uses transparent polyester plastic and Indium Tin Oxide (ITO) film to replace the traditional dielectric substrate and periodic metal pattern, so as to realize the optical transparent characteristic. By means of the multi-layer design of the air cavity, multiple layers of transparent impedance film structures with different electric sizes are introduced to perform multi-frequency point superposition and other methods, so that the absorption frequency band and the absorption rate of the wave absorber are improved.
Due to the adoption of the technical scheme, the invention has the following beneficial effects:
First, the present invention has an optically transparent property. The transparent polyester plastic and the ITO film are used for replacing a dielectric substrate and a patterned metal patch in the traditional metamaterial wave absorber, wherein the transmittance of the ITO film used is more than 65% in the whole visible light wave band, and the optical transparency characteristic of the wave absorber is realized. The optical transparency of the super-surface absorber further expands the application prospect of the structure.
Secondly, the wave absorber designed by the invention adopts the multilayer design of adding the air cavity by using the ITO film material with the loss characteristic, introduces structures with different electric sizes to carry out multi-frequency point superposition, and introduces an interdigital structure to flexibly adjust the surface capacitance of the structural layer, so that the super-surface wave absorber has the working performance of wide frequency band and high absorptivity (the relative bandwidth of the absorptivity is 133 percent when the absorptivity is more than 90 percent, and the relative bandwidth of the absorptivity is 115 percent when the absorptivity is more than 95 percent). The wave absorber unit has better polarization insensitivity and incident angle stability, and can still maintain the wave absorption rate of more than 80% in the frequency band of 5-25 GHz when the incident angle is increased to 50 degrees.
Third, the present invention possesses good RCS shrinkage reduction performance. When the incident angle range of electromagnetic waves of the TE mode and the TM mode is 0-30 degrees, the average RCS value of the super-surface wave absorber is reduced by not less than 10dB in a wide frequency band of 5-25 GHz compared with an equal-sized metal plate. When the incident angle of electromagnetic waves reaches 45 degrees, the average double-station RCS reduction of the super-surface wave absorber in the frequency band of 5-25 GHz is still more than 8dB.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and constitute a part of this specification, are incorporated in and constitute a part of this specification and do not limit the application in any way, and in which:
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic structural view of a metamaterial absorber unit according to the present invention;
FIG. 3 is a top view of the substructure in the cell structure of the present invention;
FIG. 4 (a) is a top view of an interlayer structure in the cell structure of the present invention;
FIGS. 4 (b), (c) are schematic diagrams of the interdigital structures in the patterned ITO resistive film of the interlayer structure of the present invention;
FIG. 5 is a top view of the top layer structure in the cell structure of the present invention;
FIG. 6 is a graph of simulation results of the wave absorption of the unit of the present invention;
FIG. 7 is a graph of S-parameter simulation results for a cell of the present invention;
FIG. 8 is a graph showing simulation results of wave absorption rate of the wave absorber unit according to the present invention when electromagnetic waves are obliquely incident at different angles;
FIG. 9 (a) is a graph of a single-station RCS simulation of a broadband ultra-surface absorber containing 10X 10 absorber units at TE wave normal incidence;
FIG. 9 (b) is a graph of a single-station RCS simulation of a broadband ultra-surface absorber containing 10X 10 absorber units at normal incidence of the TM wave;
FIG. 10 (a) is a graph of a two-station RCS simulation of a broadband super surface absorber comprising 10X 10 absorbing units with the mirror direction of the oblique incidence direction as the observation point when TE waves are obliquely incident at 15 °;
FIG. 10 (b) is a graph of a two-station RCS simulation of a broadband super surface absorber comprising 10X 10 absorber units with the mirror direction of the oblique incidence direction as the observation point when the TM wave is obliquely incident at 15 °;
FIG. 11 (a) is a graph of a two-station RCS simulation of a broadband super surface absorber comprising 10X 10 absorbing units with the mirror direction of the oblique incidence direction as the observation point when TE waves are obliquely incident at 30 °;
FIG. 11 (b) is a graph of a two-station RCS simulation of a broadband super surface absorber comprising 10X 10 absorbing units with the mirror direction of the oblique incidence direction as the observation point when the TM wave is obliquely incident at 30 °;
FIG. 12 (a) is a graph of a two-station RCS simulation of a broadband super surface absorber comprising 10X 10 absorbing units with the mirror direction of the oblique incidence direction as the observation point when TE waves are obliquely incident at 45 °;
Fig. 12 (b) is a graph of a simulation of a two-station RCS with the mirror direction of the oblique incidence direction as the observation point when a TM wave is obliquely incident at 45 ° for a broadband super-surface absorber including 10×10 absorbing units.
In the figure, 1 is a top patterned ITO resistive film layer, 2 is a top PET dielectric layer, 3 is an intermediate patterned ITO resistive film layer, 4 is an intermediate PET dielectric layer, 5 is a bottom ITO resistive film layer, 6 is a bottom PET dielectric layer, and 7 is an unetched ITO resistive film layer.
Detailed Description
The present invention will now be described in detail with reference to the drawings and the specific embodiments thereof, wherein the exemplary embodiments and descriptions of the present invention are provided for illustration of the invention and are not intended to be limiting.
Referring to FIG. 1, the optical transparent broadband high-absorption wave absorber provided by the embodiment of the invention consists of N multiplied by M wave absorber units which are arranged in an array, wherein N is more than or equal to 10 columns, and M is more than or equal to 10 rows. The wave absorber unit comprises a top PET medium layer 2, an air layer, an intermediate PET medium layer 4, an air layer and a bottom PET medium layer 6. The top PET medium layer 2 and the middle PET medium layer 4 both take the PET medium layer as a substrate, and the upper surface of the medium layer is provided with a top patterned ITO resistance film layer 1; the middle of the bottom PET dielectric layer 6 is a PET dielectric layer, the upper surface of the dielectric layer is a patterned bottom ITO resistive film layer 5, and the lower surface of the dielectric layer is an unetched ITO resistive film layer 7.
In one embodiment, the unit structure of the wave absorber of the present invention will be described in further detail with reference to fig. 2.
The overall structural dimensions of the absorber unit were 11×11× 6.925mm 3, and the length and width of the unit were p=11 mm. The upper surface of the top layer of the wave absorber unit is an ITO resistance film layer 1, a square bending ring structure with etching patterns is adopted, the substrate of the top layer is a PET dielectric layer 2, and the thickness of the PET dielectric layer 2 is H1 = 0.175mm.
The thickness of the bottom PET medium layer of the wave absorber unit is larger than that of the middle PET medium layer and larger than that of the top PET medium layer, and the thickness of the air layer between the top PET medium layer and the middle PET medium layer is larger than that between the middle PET medium layer and the bottom PET medium layer.
The upper surface of the middle layer PET medium layer is an ITO resistance film layer 3, etching patterns are respectively regular octagon ring combined internal interdigital structures, and the substrate of the middle layer is a middle layer PET medium layer 4. The thickness of the middle PET medium layer 4 is H2=0.75 mm, and an air layer with the thickness of GAP1=3 mm is arranged between the top layer and the middle layer.
The upper surface of the bottom layer of the wave absorber unit is provided with a bottom ITO resistance film layer 5, the etched patterns are respectively in a square ring structure, the substrate of the bottom layer is a bottom PET dielectric layer 6, and the thickness of the bottom PET dielectric layer 6 is H3 = 1mm. The lower surface of the underlayer is an unetched ITO resistive film layer 7, and an air layer with a thickness of GAP 2=2 mm is provided between the intermediate layer and the underlayer.
Wherein, the air layer is made of transparent composite material, and the support frame is prepared around the interlayer, and the air is filled in the air layer. The patterned ITO resistive film and the unetched ITO resistive film are obtained by coating a layer of indium tin oxide ITO coating on a transparent organic substrate material through a sputtering process and then carrying out high-temperature annealing treatment. The ITO resistive film layer is a polyethylene terephthalate film. The square resistance values of the four layers of ITO resistance films of the wave absorber unit are 35 omega.
The etching pattern of the ITO resistive film layer on the upper surface of the bottom layer of the present absorber unit will be described in further detail with reference to fig. 3. The etching pattern of the bottom ITO resistive film layer 5 on the upper surface of the bottom layer of the wave absorber unit is of a square ring structure, the side length of the outer square is P=11 mm, and the side length of the inner square is W1=1.4 mm.
The etching pattern of the patterned ITO resistive film layer on the upper surface of the intermediate PET dielectric layer 4 of the present absorber unit will be described in further detail with reference to fig. 4 (a) - (c).
Referring to fig. 4 (a), the etching pattern of the middle layer patterned ITO resistive film layer 3 on the upper surface of the middle layer of the wave absorber unit is a regular octagon ring structure and an internal interdigital structure, the interdigital structures distributed in a cross shape are symmetrically distributed on the inner side and the outer side of the regular octagon, the middle of the interdigital structure is a solid body, the four directions of the solid body are respectively extended with a plurality of comb teeth, the four sides of the regular octagon structure are extended with a plurality of comb teeth inwards, and the comb teeth are mutually inserted into each other to form interdigital shapes. The width and the extension length of each comb tooth are the same.
The outer side length of the regular octagonal ring is l2=4.17 mm, and the thickness of the regular octagonal ring is w3=0.46 mm. The side length of the inner square is w4=2.38 mm. In the interdigital structure between the regular octagonal ring and the four sides of the inner square, the interdigital structures are the same, and the length of the interdigital structure is l3=3.21 mm.
Referring to fig. 4 (b) and 4 (c), the interdigital structure 8 in fig. 4 (a) will be further described, wherein the width of the interdigital structure is w8=0.14 mm, and the adjacent interdigital structures extending from the same side are equally spaced, and the spacing is w7=0.42 mm.
The etching pattern of the ITO resistive film layer on the top surface of the top layer of the absorber unit will be described in further detail with reference to fig. 5.
The etching pattern of the top layer patterning ITO resistive film layer 1 on the upper surface of the top layer of the wave absorber unit is of a square bending ring structure, three periods are symmetrically and equidistantly bent on each side of the square, and the width of the inner bending side is smaller than that of the side bending edge. I.e. on the basis of a square ring, four sides of the square ring are added with the same bending structure to introduce more resonances. As shown in FIG. 5, each side of the square ring has two identical inward concave bends, the length of the square ring side length between the two concave portions is L5=2.1 mm, the length of the square ring side length at two sides of the two concave portions is L4=L6=3.35 mm, and the width of the concave portions is L7=0.5 mm. The thickness of the square ring at the non-inward concave part and the square ring at the side surface of the inward concave part is W5=0.8 mm, and the thickness of the square ring at the bottom of the inward concave part is W6=0.5 mm.
The technical effects of the invention are further described by combining simulation experiments:
the broadband high-absorptivity super-surface wave absorber unit is subjected to simulation analysis by using commercial simulation software, and a simulation curve of the wave absorption rate of the wave absorber unit when electromagnetic waves are vertically incident is shown in fig. 6. The abscissa in fig. 6 is the frequency value in GHz, and the ordinate is the wave absorption rate. As shown in the figure, the wave absorption rate of the wave absorber unit is more than 90% in the frequency band of 4.92-24.55 GHz, and the wave absorber unit realizes the wave absorption rate of more than 95% in the frequency band of 5.74-21.85 GHz. Compared with the super-surface wave absorber which realizes 90% wave absorption rate in other working frequency bands, the wave absorber unit realizes higher absorption rate, can realize more efficient absorption of electromagnetic waves in a wide frequency band, and realizes performance improvement of the super-surface wave absorber relative to other resistive film types.
The simulation result of the S parameter of the absorber unit is shown in fig. 7. The abscissa in fig. 7 is the frequency value in GHz, and the ordinate is the S parameter in dB. The curve with square targets in fig. 7 is the S 11 curve, and the curve with circular targets is the S 21 curve. As can be seen from the figure, the unit reflection coefficient is smaller than-10 dB in the 4.91-24.54 GHz frequency band, and the transmission coefficient is smaller than-30 dB in the full frequency band. The low transmission coefficient is caused by the ITO resistive film adopted in the absorber unit structure, and the resistive film has low surface resistance property, so that most electromagnetic wave energy is converted into internal energy through ohmic loss and cannot penetrate.
The simulation curves of the wave absorption rate when the electromagnetic waves obliquely enter the wave absorber unit at different incidence angles are shown in fig. 8. As shown in fig. 8, when the electromagnetic wave is obliquely incident to the wave absorber unit, the wave absorption rate of the unit gradually decreases with the increase of the incident angle, and when the incident angle increases to 50 °, the wave absorption rate of the wave absorber unit remains above 80% in the frequency band of 5-25 GHz, reflecting that the invention also has more stable working performance under the irradiation of the obliquely incident electromagnetic wave.
In order to verify the scattering characteristics of the invention on electromagnetic waves, the invention is modeled and simulated by using commercial simulation software. The modeling model of the invention is shown in fig. 1, the wave absorber of the invention is composed of N multiplied by M (N=10, M=10) wave absorber units which are arranged in an array, and the structural size of the broadband super-surface wave absorber is 110 multiplied by 6.925mm 3. Fig. 9 (a) and 9 (b) are graphs of a single-station RCS when TE waves and TM waves are perpendicularly incident to the present invention, respectively. In fig. 9 (a) and 9 (b), the abscissa indicates frequency values in GHz, and the ordinate indicates RCS, in dBsm. The curves shown in fig. 9 (a) and 9 (b) are RCS simulation curves of the wave absorber, the curves shown in the circular target are RCS simulation curves of the equal-sized metal plates, and the same-sized metal plates are used as references to verify the absorption performance of the broadband super-surface wave absorber on electromagnetic waves. When TE waves are vertically incident, the broadband super-surface wave absorber has obvious RCS reduction effect at 4.5-26 GHz, and the average RCS reduction amount is 12.05dB; when TM waves are perpendicularly incident, the broadband super-surface wave absorber has obvious RCS reduction effect at 4.5-26 GHz, and the average RCS reduction amount is 12.39dB. Simulation results show that when two polarized plane waves are perpendicularly incident, the broadband super-surface wave absorber can effectively absorb electromagnetic waves in a wide working frequency band.
Fig. 10 (a) and 10 (b) are graphs of a dual-station RCS when TE and TM waves are obliquely incident at 15 °, respectively. The abscissa in fig. 10 (a) and 10 (b) is the frequency value in GHz, and the ordinate is the RCS in dBsm. The curve with square mark in fig. 10 (a) and 10 (b) is the RCS simulation curve of the absorber, the curve with circular mark is the RCS simulation curve of the equal-sized metal plate, and the same-sized metal plate is used as a reference to verify the absorption performance of the broadband super-surface absorber to electromagnetic waves. For double-station scattering, the mirror image direction of the oblique incidence direction is taken as an observation point, and the double-station RCS of the super-surface absorber at the position is maximum. When TE waves are incident, the broadband super-surface wave absorber has obvious RCS reduction effect at 4.5-26 GHz, and the average RCS reduction amount is 11.39dB; when TM wave is incident, the broadband super-surface wave absorber has obvious RCS reduction effect at 4.5-26 GHz, and the average RCS reduction amount is 11.87dB.
Fig. 11 (a) and 11 (b) are graphs of a dual-station RCS when TE and TM waves are obliquely incident at 30 °, respectively. The abscissa in fig. 11 (a) and 11 (b) is the frequency value in GHz, and the ordinate is the RCS in dBsm. The square standard curve in fig. 11 (a) and 11 (b) is the RCS simulation curve of the absorber, the circular standard curve is the RCS simulation curve of the equal-sized metal plate, and the same-sized metal plate is used as a reference to verify the absorption performance of the broadband super-surface absorber to electromagnetic waves. When TE waves are incident, the broadband super-surface wave absorber has obvious RCS reduction effect at 4.5-24 GHz, and the average RCS reduction amount is 10.05dB; when TM wave is incident, the broadband super-surface wave absorber has obvious RCS reduction effect at 4.5-24 GHz, and the average RCS reduction amount is 10.51dB. Simulation results show that when electromagnetic waves are obliquely incident at 30 degrees, the broadband super-surface wave absorber can still maintain good wave absorbing effect.
Fig. 12 (a) and 12 (b) are graphs of a dual-station RCS when TE and TM waves are obliquely incident at 45 °, respectively. The abscissa in fig. 12 (a) and 12 (b) is the frequency value in GHz, and the ordinate is the RCS in dBsm. The square standard curve in fig. 12 (a) and fig. 12 (b) is the RCS simulation curve of the absorber, the circular standard curve is the RCS simulation curve of the equal-sized metal plate, and the same-sized metal plate is used as a reference to verify the absorption performance of the broadband super-surface absorber to electromagnetic waves. When TE waves are incident, the broadband super-surface wave absorber has obvious double-station RCS reduction effect at 8-24.5 GHz, and the average RCS reduction amount is 8.31dB; when TM wave is incident, the broadband super-surface wave absorber has obvious double-station RCS reduction effect at 7.5-24 GHz, and the average RCS reduction amount is 8.11dB. Simulation results show that when electromagnetic waves are obliquely incident at 45 degrees, the performance of the broadband super-surface wave absorber is reduced, but better wave absorbing effect can be realized on the electromagnetic waves in a broadband, and the effect that the average RCS is reduced by more than 8dB is achieved in the broadband.
Compared with the prior art, the simulation result shows that the optical transparent broadband high-absorption wave absorber realizes wider frequency band and higher efficiency absorption of electromagnetic waves on the premise of having optical transparent characteristics, has good RCS shrinkage reduction performance, has good polarization insensitivity and incidence angle stability, and can be used for carrier platforms and antenna systems with low scattering requirements.
The invention is not limited to the above embodiments, and based on the technical solution disclosed in the invention, a person skilled in the art may make some substitutions and modifications to some technical features thereof without creative effort according to the technical content disclosed, and all the substitutions and modifications are within the protection scope of the invention.
Claims (7)
1. An optical transparent broadband high-wave-absorbing-rate wave absorber is characterized by comprising N multiplied by M wave-absorbing-rate wave absorber units which are arranged in an array, wherein N is more than or equal to 10 columns, and M is more than or equal to 10 rows;
the wave absorber unit comprises a top PET medium layer, a middle PET medium layer and a bottom PET medium layer which are distributed from top to bottom, and an air layer is arranged between the three medium layers;
Each dielectric layer comprises a dielectric plate and a patterned ITO resistive film layer printed on the dielectric plate, and the bottom PET dielectric layer further comprises an unetched ITO resistive film layer;
the ITO resistive film layer pattern of the top PET dielectric layer is of a square bending ring structure; the patterns of the ITO resistance film layer of the middle PET medium layer are regular octagon rings and internal interdigital structures; the pattern of the bottom PET medium layer ITO resistance film layer is of a square ring structure;
the square bending ring structure of the top PET dielectric layer is formed by symmetrically bending three periods at equal intervals on each side of a square, and the width of the inner bending side is smaller than that of the side bending side;
The regular octagon ring and the inner interdigital structure of the middle PET dielectric layer comprise an outer regular octagon structure, interdigital structures which are distributed in a cross shape are symmetrically distributed on the inner side of the outer length of the regular octagon, the middle part of the interdigital structure is a solid body, a plurality of comb teeth are respectively extended in four directions of the solid body, a plurality of comb teeth are inwards extended on four sides of the regular octagon structure, and the comb teeth are mutually inserted into the comb teeth to form interdigital shapes;
the wave absorber unit is overlapped through multiple frequency points of structures with different sizes, so that high wave absorption rate in a wide frequency band is realized.
2. The optically transparent broadband high-absorption wave absorber according to claim 1, wherein the width and extension length of each comb tooth are the same.
3. The optically transparent broadband high-absorption wave absorber according to claim 1, wherein the thickness of the bottom PET dielectric layer > the thickness of the middle PET dielectric layer > the thickness of the top PET dielectric layer.
4. The optically transparent broadband high-absorption wave absorber according to claim 1, wherein the air layer thickness between the top PET medium layer and the middle PET medium layer is greater than the air layer thickness between the middle PET medium layer and the bottom PET medium layer.
5. The optical transparent broadband high-absorption wave absorber according to claim 4, wherein the air layer is a transparent composite material, and a supporting frame is prepared around the interlayer, and the air is filled in the supporting frame.
6. The optical transparent broadband high-absorption wave absorber according to claim 1, wherein the patterned ITO resistive film and the unetched ITO resistive film are obtained by coating an indium tin oxide ITO coating layer on a transparent organic substrate material through a sputtering process and then performing high-temperature annealing treatment.
7. The optically transparent broadband high-absorption wave absorber according to claim 1, wherein the ITO resistive film layer is a polyethylene terephthalate film.
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