CN114196936A - Novel preparation process for preparing DLC coating by ion beam method - Google Patents
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- CN114196936A CN114196936A CN202111519322.3A CN202111519322A CN114196936A CN 114196936 A CN114196936 A CN 114196936A CN 202111519322 A CN202111519322 A CN 202111519322A CN 114196936 A CN114196936 A CN 114196936A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/0281—Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/343—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one DLC or an amorphous carbon based layer, the layer being doped or not
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Abstract
The invention discloses a novel preparation process for preparing a DLC coating by an ion beam method, which relates to the field of surface strengthening and comprises the following steps: ion cleaning; preparing a metal transition layer: depositing a metal transition layer on the surface of the workpiece; preparing a DLC coating: introducing acetylene gas, and simultaneously starting ion beams to prepare the DLC coating; removing the stress of the coating: stopping introducing acetylene gas, introducing argon gas at the same time, closing an ion beam baffle, and applying 3-5V bias pulse to the workpiece at the same time; deposition of DLC coating: and repeating and circulating the steps of preparing the DLC coating and removing the stress of the coating until the DLC coating reaches the design requirement. The invention has the advantages that: adopt neotype DLC preparation technology, alternating lets in acetylene gas and argon gas in DLC deposition process flow, constantly carries out the cleanness of ion beam at DLC deposition process, releases coating internal stress simultaneously, reduces DLC coating internal stress, improves the cohesion of coating, avoids appearing the condition emergence that the coating drops, improves the protective capacities of coating.
Description
Technical Field
The invention relates to the field of surface strengthening, in particular to a preparation process for preparing a DLC coating by a novel ion beam method.
Background
Diamond-like coatings (Diamond-like Carbon) or DLC coatings for short are metastable amorphous substances containing a Diamond structure (sp3 bonds) and a graphite structure (sp2 bonds), with Carbon atoms mainly bonded by sp3 and sp2 hybrid bonds. Diamond-like coatings, or DLC coatings for short, are amorphous films that can be divided into substantially hydrogen-containing diamond-like (a-C: H) coatings and hydrogen-free diamond-like coatings.
The traditional DLC deposition process needs to add a process gas C in the preparation process2H2The time is about 200 to 240 minutes, and in the process, the ion beam is introduced into the C for a long time2H2In the process, the pollution between the cathode and the anode is serious, the normal work of the ion beam is seriously influenced, and therefore, the C can not be ensured2H2The ionization of the coating is realized, and meanwhile, the internal stress of the coating is continuously accumulated in the long-time DLC deposition process, so that the binding force of the coating is reduced, and the coating is easy to fall off.
Disclosure of Invention
In order to solve the technical problems, the technical scheme provides a novel preparation process for preparing the DLC coating by the ion beam method, and solves the problem that the process gas C needs to be added in the preparation process in the traditional DLC deposition process2H2The time is about 200 to 240 minutes, and in the process, the ion beam is introduced into the C for a long time2H2In the process, the pollution between the cathode and the anode is serious, the normal work of the ion beam is seriously influenced, and therefore, the C can not be ensured2H2The ionization of the coating is realized, and meanwhile, the internal stress of the coating is continuously accumulated in the long-time DLC deposition process, so that the binding force of the coating is reduced, and the problem of coating falling is easily caused.
In order to achieve the above purposes, the technical scheme adopted by the invention is as follows:
a novel process for preparing a DLC coating by an ion beam method comprises the step of sequentially and alternately introducing acetylene gas and argon gas into a vacuum deposition cavity and an ion beam in the DLC coating deposition process.
Preferably, the preparation process specifically comprises the following steps:
ion cleaning: introducing inert gas into the vacuum deposition cavity to keep the pressure in the vacuum deposition cavity at 0.1-0.25Pa, then opening an ion beam, applying a working voltage of 1400-1600V and a working current of 150-180mA to the ion beam, and simultaneously applying a bias pulse of 1000-1500V to the workpiece, wherein the duty ratio is 20%, and performing ion cleaning on the surface of the workpiece;
preparing a metal transition layer: discharging the metal target in a direct-current magnetron sputtering mode, and depositing a metal transition layer on the surface of the workpiece;
preparing a DLC coating: introducing acetylene gas into the vacuum deposition cavity and the ion beam, starting the ion beam at the same time, and preparing the DLC coating on the surface of the workpiece for 30-60 min;
removing the stress of the coating: stopping introducing acetylene gas into the vacuum deposition cavity, introducing argon gas into the vacuum deposition cavity and the ion beam, closing an ion beam baffle, adjusting the ion beam current to be about 500mA, and simultaneously applying 3-5V bias pulse to the workpiece to eliminate the coating stress for 5-10 min;
deposition of DLC coating: and repeating and circulating the steps of preparing the DLC coating and removing the stress of the coating until the DLC coating reaches the design requirement.
Preferably, in the step of preparing the metal transition layer, the technological parameters of the direct current magnetron sputtering are as follows: the current is 6-10A, the voltage is 600V, 100-300V bias pulses are applied to the workpiece, and the duty ratio is 30%.
Preferably, in the DLC coating preparation step, after introducing acetylene gas into the vacuum deposition chamber and the ion beam, the pressure inside the vacuum deposition chamber is maintained at 0.1-0.25Pa, and simultaneously, 1400-.
Preferably, in the coating stress removing step, after argon is introduced into the vacuum deposition chamber and the ion beam, the pressure inside the vacuum deposition chamber is kept at 1.8-2.2 Pa.
Compared with the prior art, the invention has the advantages that:
adopts a preparation process of alternately introducing process gas and argon, continuously cleans ion beams in the DLC coating conversion process, and releasing the internal stress of the coating, during preparation, firstly introducing acetylene gas into the vacuum deposition cavity to promote the conversion of the metal transition layer from the metal coating to the DLC coating, then introducing argon gas into the vacuum deposition cavity and the ion beam, wherein the interior of the ion beam is cleaned under the condition of argon gas to ensure the normal work of the subsequent ion beam, meanwhile, bias pulse is applied to the workpiece, argon ions perform low-bias bombardment on the DLC coating, so that stress in the DLC deposition process is released in time, stress reduction in the DLC coating is reduced, the steps are repeated for multiple times, internal stress of the coating is released in time, stress accumulation in the DLC coating preparation process is greatly reduced, the binding force of the coating is improved, and the condition that the coating falls off is avoided.
Drawings
FIG. 1 is a bar graph of stress change of DLC coating prepared by the present invention.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art.
Example one
A novel preparation process for preparing a DLC coating by an ion beam method specifically comprises the following steps:
ion cleaning: introducing inert gas into the vacuum deposition cavity to keep the pressure in the vacuum deposition cavity at 0.1-0.25Pa, then opening an ion beam, applying a working voltage of 1400-1600V and a working current of 150-180mA to the ion beam, and simultaneously applying a bias pulse of 1000-1500V to the workpiece, wherein the duty ratio is 20%, and performing ion cleaning on the surface of the workpiece;
preparing a metal transition layer: discharging a metal target in a direct current magnetron sputtering mode, and depositing a metal transition layer on the surface of a workpiece, wherein the process parameters of the direct current magnetron sputtering are as follows: the current is 6-10A, the voltage is 600V, 100-300V bias pulse is applied to the workpiece, and the duty ratio is 30 percent;
preparing a DLC coating: keeping the pressure in the vacuum deposition cavity to be 0.1-0.25Pa after introducing acetylene gas into the vacuum deposition cavity and the ion beam, simultaneously applying a working voltage of 1500-1800V and a working current of 180-200mA to the ion beam, applying a bias pulse of 800-1200V to the workpiece, and performing DLC coating preparation for 30min, wherein the duty ratio is 30%;
removing the stress of the coating: stopping introducing acetylene gas into the vacuum deposition cavity, introducing argon gas into the vacuum deposition cavity and the ion beam at the same time, keeping the air pressure in the vacuum deposition cavity at 1.8-2.2Pa, closing an ion beam baffle, adjusting the ion beam current to be about 500mA, and simultaneously applying 3-5V bias pulse to the workpiece to eliminate the coating stress for 7.5 min;
deposition of DLC coating: and repeating and circularly performing the steps of preparing the DLC coating and removing the stress of the coating until the DLC coating preparation time reaches 240 min.
Example two
A novel preparation process for preparing a DLC coating by an ion beam method specifically comprises the following steps:
ion cleaning: introducing inert gas into the vacuum deposition cavity to keep the pressure in the vacuum deposition cavity at 0.1-0.25Pa, then opening an ion beam, applying a working voltage of 1000-1500V and a working current of 150-180mA to the ion beam, and simultaneously applying a bias pulse of 1000-1500V to the workpiece, wherein the duty ratio is 20%, and performing ion cleaning on the surface of the workpiece;
preparing a metal transition layer: discharging a metal target in a direct current magnetron sputtering mode, and depositing a metal transition layer on the surface of a workpiece, wherein the process parameters of the direct current magnetron sputtering are as follows: the current is 6-10A, the voltage is 100-300V, 100-300V bias pulse is applied to the workpiece, and the duty ratio is 30%;
preparing a DLC coating: keeping the pressure in the vacuum deposition cavity to be 0.1-0.25Pa after introducing acetylene gas into the vacuum deposition cavity and the ion beam, simultaneously applying a working voltage of 1500-1800V and a working current of 180-200mA to the ion beam, applying a bias pulse of 800-1200V to the workpiece, and performing DLC coating preparation for 60min at a duty ratio of 30%;
removing the stress of the coating: stopping introducing acetylene gas into the vacuum deposition cavity, introducing argon gas into the vacuum deposition cavity and the ion beam at the same time, keeping the air pressure in the vacuum deposition cavity at 1.8-2.2Pa, closing an ion beam baffle, adjusting the ion beam current to be about 500mA, and simultaneously applying 3-5V bias pulse to the workpiece to eliminate the coating stress for 5 min;
deposition of DLC coating: and repeating and circulating the steps of preparing the DLC coating and removing the stress of the coating until the DLC coating preparation time reaches 240 min.
EXAMPLE III
A novel preparation process for preparing a DLC coating by an ion beam method specifically comprises the following steps:
ion cleaning: introducing inert gas into the vacuum deposition cavity to keep the pressure in the vacuum deposition cavity at 0.1-0.25Pa, then opening an ion beam, applying a working voltage of 1000-1500V and a working current of 150-180mA to the ion beam, and simultaneously applying a bias pulse of 1000-1500V to the workpiece, wherein the duty ratio is 20%, and performing ion cleaning on the surface of the workpiece;
preparing a metal transition layer: discharging a metal target in a direct current magnetron sputtering mode, and depositing a metal transition layer on the surface of a workpiece, wherein the process parameters of the direct current magnetron sputtering are as follows: the current is 6-10A, the voltage is 600V, 100-300V bias pulse is applied to the workpiece, and the duty ratio is 30 percent;
preparing a DLC coating: keeping the pressure in the vacuum deposition cavity to be 0.1-0.25Pa after introducing acetylene gas into the vacuum deposition cavity and the ion beam, simultaneously applying a working voltage of 800-1200V and a working current of 150-180mA to the ion beam, applying a bias pulse of 800-1200V to the workpiece, wherein the duty ratio is 30%, and performing DLC coating preparation for 80 min;
removing the stress of the coating: stopping introducing acetylene gas into the vacuum deposition cavity, introducing argon gas into the vacuum deposition cavity and the ion beam at the same time, keeping the air pressure in the vacuum deposition cavity at 1.8-2.2Pa, closing an ion beam baffle, adjusting the ion beam current to be about 500mA, and simultaneously applying 3-5V bias pulse to the workpiece to eliminate the coating stress for 10 min;
deposition of DLC coating: and repeating and circulating the steps of preparing the DLC coating and removing the stress of the coating until the DLC coating preparation time reaches 240 min.
Comparative example
A novel preparation process for preparing a DLC coating by an ion beam method specifically comprises the following steps:
ion cleaning: introducing inert gas into the vacuum deposition cavity to keep the pressure in the vacuum deposition cavity at 0.1-0.25Pa, then opening an ion beam, applying a working voltage of 1400-1600V and a working current of 150-180mA to the ion beam, and simultaneously applying a bias pulse of 1000-1500V to the workpiece, wherein the duty ratio is 20%, and performing ion cleaning on the surface of the workpiece;
preparing a metal transition layer: discharging a metal target in a direct current magnetron sputtering mode, and depositing a metal transition layer on the surface of a workpiece, wherein the process parameters of the direct current magnetron sputtering are as follows: the current is 6-10A, the voltage is 600V, 100-300V bias pulse is applied to the workpiece, and the duty ratio is 30 percent;
preparing a DLC coating: and (3) introducing acetylene gas into the vacuum deposition cavity and the ion beam, keeping the pressure in the vacuum deposition cavity at 0.1-0.25Pa, simultaneously applying a working voltage of 1500-1800V and a working current of 150-180mA to the ion beam, applying a bias pulse of 800-1200V to the workpiece, and performing DLC coating preparation for 240min, wherein the duty ratio is 30%.
Testing the internal stress performance of the coating:
the DLC coatings prepared using the process methods of example one, example two, example three and comparative example were tested for internal stress using the substrate bending method, respectively, and the results are shown in the following table:
stress (GPa) | Mean stress (GPa) | |
Example one | 0.35 | 0.03 |
Example two | 0.38 | 0.04 |
EXAMPLE III | 0.36 | 0.03 |
Comparative example | 8.33 | 0.76 |
The data in the table show that the internal stress in the traditional DLC coating preparation process can not be released in time, and in the long-time superposition accumulation process, the internal stress reaches over 8GPa, so that the bonding force between DLC and a substrate is poor, the coating can be instantaneously collapsed and failed in the use process, and the protection effect is lost.
In summary, the invention has the advantages that: adopt neotype DLC preparation technology, alternating lets in acetylene gas and argon gas in DLC deposition process flow, constantly carries out the cleanness of ion beam at DLC deposition process, releases coating internal stress simultaneously, reduces DLC coating internal stress, improves the cohesion of coating, avoids appearing the condition emergence that the coating drops, improves the protective capacities of coating.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are merely illustrative of the principles of the invention, but that various changes and modifications may be made without departing from the spirit and scope of the invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (5)
1. A novel preparation process for preparing a DLC coating by an ion beam method is characterized in that acetylene gas and argon gas are sequentially and alternately introduced into a vacuum deposition cavity and an ion beam in the DLC coating deposition process.
2. The novel process for preparing DLC coating by ion beam method as claimed in claim 1, which comprises the following steps:
ion cleaning: introducing inert gas into the vacuum deposition cavity to keep the pressure in the vacuum deposition cavity at 0.1-0.25Pa, then opening an ion beam, applying a working voltage of 1400-1600V and a working current of 150-180mA to the ion beam, and simultaneously applying a bias pulse of 1000-1500V to the workpiece, wherein the duty ratio is 20%, and performing ion cleaning on the surface of the workpiece;
preparing a metal transition layer: discharging the metal target in a direct-current magnetron sputtering mode, and depositing a metal transition layer on the surface of the workpiece;
preparing a DLC coating: introducing acetylene gas into the vacuum deposition cavity and the ion beam, starting the ion beam at the same time, and preparing the DLC coating on the surface of the workpiece for 30-60 min;
removing the stress of the coating: stopping introducing acetylene gas into the vacuum deposition cavity, introducing argon gas into the vacuum deposition cavity and the ion beam, closing an ion beam baffle, adjusting the ion beam current to be about 500mA, and simultaneously applying 3-5V bias pulse to the workpiece to eliminate the coating stress for 5-10 min;
deposition of DLC coating: and repeating and circulating the steps of preparing the DLC coating and removing the stress of the coating until the DLC coating reaches the design requirement.
3. The novel ion beam method for preparing DLC coating as claimed in claim 2, wherein in said metal transition layer preparation step, the DC magnetron sputtering process parameters are: the current is 6-10A, the voltage is 600V, 100-300V bias pulses are applied to the workpiece, and the duty ratio is 30%.
4. The process as claimed in claim 2, wherein in the step of preparing DLC coating, the pressure inside the vacuum deposition chamber is maintained at 0.1-0.25Pa after acetylene gas is introduced into the vacuum deposition chamber and the ion beam, and the ion beam is applied with an operating voltage of 1500-1800V and an operating current of 180-200mA, and a bias pulse of 50-100V is applied to the workpiece at a duty ratio of 30%.
5. The process for preparing DLC coating by ion beam method as claimed in claim 3, wherein in said coating stress removing step, after introducing argon gas into the vacuum deposition chamber and the ion beam, the pressure inside the vacuum deposition chamber is maintained at 1.8-2.2 Pa.
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CN116676557A (en) * | 2023-06-08 | 2023-09-01 | 广东省广新离子束科技有限公司 | Drill bit with self-lubricating DLC coating and preparation method thereof |
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CN108754450A (en) * | 2018-07-03 | 2018-11-06 | 广东省新材料研究所 | A kind of low stress diamond-like multi-layer film and preparation method thereof |
CN109811303A (en) * | 2019-01-23 | 2019-05-28 | 上海大学 | Nano-diamond film preparation method based on DLC film middle layer |
CN112553584A (en) * | 2020-11-04 | 2021-03-26 | 河北汉光重工有限责任公司 | Method for depositing diamond-like carbon film on outer surface of inner ring of knuckle bearing |
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CN116676557A (en) * | 2023-06-08 | 2023-09-01 | 广东省广新离子束科技有限公司 | Drill bit with self-lubricating DLC coating and preparation method thereof |
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