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CN114171694A - Display panel and manufacturing method thereof - Google Patents

Display panel and manufacturing method thereof Download PDF

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Publication number
CN114171694A
CN114171694A CN202111485672.2A CN202111485672A CN114171694A CN 114171694 A CN114171694 A CN 114171694A CN 202111485672 A CN202111485672 A CN 202111485672A CN 114171694 A CN114171694 A CN 114171694A
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electrode
display panel
emitting layer
cathode
substrate
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CN202111485672.2A
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CN114171694B (en
Inventor
王兴华
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The application discloses display panel and manufacturing method thereof, and the display panel comprises: a substrate, an anode, a light emitting layer and a cathode; the anode is arranged on the substrate; the luminescent layer is arranged on the anode; the cathode is arranged on one side, far away from the substrate, of the light-emitting layer, the cathode comprises a first electrode and a second electrode, the first electrode comprises an electron transport material and an active metal material, the second electrode comprises a hole transport material and a p-type material, and the second electrode is arranged on one side, far away from the light-emitting layer, of the first electrode. The application provides a display panel, through setting up compound electrode type negative pole, can reduce the injection potential barrier of negative pole electron, improve display panel's luminous efficacy.

Description

Display panel and manufacturing method thereof
Technical Field
The application relates to the technical field of display, in particular to a display panel and a manufacturing method thereof.
Background
An Organic Light Emitting diode Display (OLED) has many advantages of self-luminescence, low driving voltage, high luminous efficiency, short response time, high definition and contrast, a viewing angle of nearly 180 °, a wide temperature range, flexible Display, large-area full color Display, and the like, and is considered as a Display device with the most potential for development.
The light emitting principle of the OLED is based on the fact that under the action of an external electric field, electrons are injected from a cathode to the Lowest Unoccupied Molecular Orbital (LUMO) of an organic substance, holes are injected from an anode to the Highest Occupied Molecular Orbital (HOMO) of the organic substance, the electrons and the holes meet and are combined in a light emitting layer to form excitons, the excitons migrate under the action of the electric field and transfer energy to a light emitting material, excited electrons transit from a ground state to an excited state, the excited state energy is inactivated through radiation, photons are generated, and light energy is released.
At present, one of the reasons for the low light emitting efficiency of the organic electroluminescent device is that the difference between the injection and transport rates of the holes and the injection and transport rates of the electrons is large, so that the holes and the electrons cannot be effectively recombined to emit light, and the electrons and the holes are injected first and then transported, and the injection efficiency of the holes and the electrons is an important factor influencing the transport rates of the holes and the electrons. For the injection of electrons, the work function of the current cathode metal material is higher than the LUMO energy of the electron injection layer, and the two are not matched, so that the electron injection efficiency is low, and finally, the electron transport and the hole transport cannot be matched, and the light emitting efficiency of the organic electroluminescent device is low.
Disclosure of Invention
The embodiment of the application provides a display panel and a manufacturing method thereof, which are used for reducing the injection barrier of cathode electrons and improving the luminous efficiency of the display panel.
In one aspect, an embodiment of the present application provides a display panel, including: a substrate, an anode, a light emitting layer and a cathode; the anode is arranged on the substrate; the luminescent layer is arranged on the anode; the cathode is arranged on one side, far away from the substrate, of the light emitting layer and comprises a first electrode and a second electrode, the first electrode comprises an electron transport material and an active metal material, the second electrode comprises a hole transport material and a p-type material, and the second electrode is arranged on one side, far away from the light emitting layer, of the first electrode.
Optionally, in some embodiments of the present application, the active metal material includes at least one of ytterbium, lithium, sodium, potassium, beryllium, calcium, magnesium, cesium, and barium, and a mass fraction of the active metal material in the first electrode is 1% to 3%.
Optionally, in some embodiments of the present application, the thickness of the first electrode is 10 nm to 20 nm.
Optionally, in some embodiments of the present application, the p-type material includes at least one of antimony chloride, molybdenum oxide, tungsten oxide, vanadium oxide, and rhenium oxide, and a mass fraction of the p-type material in the second electrode is 3% to 5%.
Optionally, in some embodiments of the present application, the display panel further includes a first hole blocking layer, where the first hole blocking layer is disposed on a side of the second electrode away from the light emitting layer.
Optionally, in some embodiments of the present application, the first hole blocking layer has a thickness of 10 nm to 15 nm.
Optionally, in some embodiments of the present application, the material of the first hole blocking layer is ytterbium.
Optionally, in some embodiments herein, the electron transport material comprises at least one of 4, 7-diphenyl-1, 10-phenanthroline, 4-biphenol-bis (2-methyl-8-hydroxyquinoline) aluminum, 8-hydroxyquinoline aluminum, 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-triazole, 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene; the hole transport material includes at least one of N, N '-diphenyl-N, N' -di (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, 4',4 ″ -tris (carbazol-9-yl) triphenylamine, 4' -di (9-carbazol) biphenyl, N '-di (3-methylphenyl) -N, N' -diphenyl-4, 4 '-biphenyldiamine, 1-di [4- [ N, N' -di (p-tolyl) amino ] phenyl ] cyclohexane.
Optionally, in some embodiments of the present application, the cathode further includes a third electrode, and the third electrode is disposed on a side of the first electrode close to the light emitting layer.
On the other hand, the application also provides a manufacturing method of the display panel, which comprises the following steps: providing a substrate, and forming an anode on the substrate; forming a light emitting layer on the anode; and forming a cathode on the light-emitting layer, wherein the cathode comprises a first electrode and a second electrode, the first electrode comprises an electron transport material and an active metal material, the second electrode comprises a hole transport material and a p-type material, and the second electrode is formed on one side of the first electrode, which is far away from the light-emitting layer.
The embodiment of the application provides a display panel and a manufacturing method thereof, the display panel can reduce the injection barrier of cathode electrons and improve the electron injection efficiency by arranging a composite electrode type cathode, thereby improving the electron transmission rate, balancing the hole and electron transmission, improving the luminous efficiency of the display panel and prolonging the service life of the display panel.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic view of a first structure of a display panel provided in an embodiment of the present application;
fig. 2 is a schematic diagram of a second structure of a display panel provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a third display panel provided in the embodiment of the present application;
fig. 4 is a schematic diagram of a fourth structure of a display panel provided in the embodiment of the present application;
fig. 5 is a schematic view of a manufacturing process of a display panel according to an embodiment of the present disclosure.
100/200/300/400, display panel, 10, substrate, 20, anode, 30, hole injection layer, 31, hole transport layer, 40, electron blocking layer, 50, light emitting layer, 60, second hole blocking layer, 70, cathode, 71, first electrode, 72, second electrode, 73, third electrode, 80, first hole blocking layer, 90, encapsulation layer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the application provides a display panel and a manufacturing method thereof, which are used for reducing the injection barrier of cathode electrons and improving the luminous efficiency of the display panel. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms "first," "second," "third," and the like are used merely as labels to distinguish between different objects and not to describe a particular order.
Referring to fig. 1, fig. 1 is a first structural schematic diagram of a display panel according to an embodiment of the present disclosure. As shown in fig. 1, an embodiment of the present application provides a display panel 100, including: a substrate 10, an anode 20, a light emitting layer 50, and a cathode 70; the anode 20 is arranged on the substrate 10; the light emitting layer 50 is provided on the anode 20; the cathode 70 is disposed on a side of the light emitting layer 50 away from the substrate 10, the cathode 70 includes a first electrode 71 and a second electrode 72, the first electrode 71 includes an electron transport material and an active metal material, the second electrode 72 includes a hole transport material and a p-type material, and the second electrode 72 is disposed on a side of the first electrode 71 away from the light emitting layer 50.
In the embodiment of the present application, the substrate 10 may be a conductive glass substrate 10 selected from indium tin oxide glass (ITO glass), fluorine-doped tin oxide glass (FTO glass), aluminum-doped zinc oxide glass (AZO glass), or indium-doped zinc oxide glass (IZO glass). Preferably, the thickness of the anode 20 on the substrate 10 is 100 nm to 150 nm, and the anode comprises a 10 nm ITO layer, a 100 nm metallic silver layer and a 10 nm ITO layer in sequence.
In the embodiment of the present application, the material of the light emitting layer 50 is a mixed material formed by doping a host material with a green guest material. Preferably, the host material includes at least one of 4,4',4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA), 9' - (1, 3-phenyl) di-9H-carbazole (mCP), 4' -bis (9-Carbazole) Biphenyl (CBP), N ' -bis (3-methylphenyl) -N, N ' -diphenyl-4, 4' -biphenyldiamine (TPD), 1-bis [4- [ N, N ' -bis (p-tolyl) amino ] phenyl ] cyclohexane (TAPC), 9, 10-bis (1-naphthyl) Anthracene (ADN), or the like. Wherein the green guest material comprises at least one of tris (2-phenylpyridine) iridium (ir (ppy)3), bis (2-phenylpyridine) iridium acetylacetonate (ir (ppy)2(acac)), tris [2- (p-tolyl) pyridine ] iridium (ir (mppy)3), or the like. The green guest material can be other guest materials such as blue light, white light and the like. Preferably, the thickness of the light emitting layer 50 is 20 nm to 50 nm.
In the embodiment of the present application, the cathode 70 includes a first electrode 71 and a second electrode 72, wherein the first electrode 71 includes an electron transport material and an active metal material, and the mass fraction of the active metal material in the first electrode 71 is 1% to 3%.
In the examples of the present application, at least one of 4, 7-diphenyl-1, 10-phenanthroline (Bphen), 4, 7-diphenyl-1, 10-phenanthroline (BCP), 4-biphenol-bis (2-methyl-8-hydroxyquinoline) aluminum (BAlq), 8-hydroxyquinoline aluminum (Alq3), 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-Triazole (TAZ), 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene (TPBI), and the like, which have high electron mobility, is used as the electron transport material.
In an embodiment of the present application, the active metal material comprises at least one of ytterbium, lithium, sodium, potassium, beryllium, calcium, magnesium, cesium, barium, and the like. Preferably, the active metal material is ytterbium.
In the embodiment of the present application, the thickness of the first electrode 71 is 10 nm to 20 nm.
In the embodiment of the present application, the second electrode 72 includes a hole transport material and a p-type material, and includes at least one of antimony chloride, molybdenum oxide, tungsten oxide, vanadium oxide, and rhenium oxide, and preferably includes SbCl5And oxide MoO3、WO3、V2O5Or ReO3And the p-type material in the second electrode 72 is 3 to 5% by mass.
In the examples of the present application, at least one of N, N '-diphenyl-N, N' -bis (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPB), 4',4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA), 4' -bis (9-Carbazole) Biphenyl (CBP), N '-bis (3-methylphenyl) -N, N' -diphenyl-4, 4 '-biphenyldiamine (TPD), 1-bis [4- [ N, N' -bis (p-tolyl) amino ] phenyl ] cyclohexane (TAPC), and the like is used as the hole transport material.
The display panel that this application embodiment provided can reduce the injection potential barrier of negative pole 70 electron through setting up composite electrode type negative pole 70, improves electron injection efficiency to improve electron transport rate, make hole and electron transport reach balance, improve display panel's luminous efficacy, in addition, more excellent electron injection can satisfy and reduce organic electroluminescent device's operating voltage when raising the efficiency, extension display panel's life.
As an embodiment of the present application, please refer to fig. 2, fig. 2 is a schematic diagram of a second structure of a display panel provided in an embodiment of the present application, and as shown in fig. 2, a display panel 200 includes: a substrate 10, an anode 20, a light emitting layer 50, and a cathode 70; the anode 20 is arranged on the substrate 10; the light emitting layer 50 is provided on the anode 20; the cathode 70 is disposed on a side of the light emitting layer 50 away from the substrate 10, the cathode 70 includes a first electrode 71 and a second electrode 72, the first electrode 71 includes an electron transport material and an active metal material, the second electrode 72 includes a hole transport material and a p-type material, and the second electrode 72 is disposed on a side of the first electrode 71 away from the light emitting layer 50.
In the embodiment of the present application, the display panel 200 further includes:
and the first hole blocking layer 80 is arranged on the side, away from the light-emitting layer 50, of the second electrode 72, and the thickness of the first hole blocking layer 80 is 10 nanometers. Preferably, the material of the first hole blocking layer 80 is ytterbium.
And a hole injection layer 30 disposed on the anode, wherein the hole injection layer is a mixed material formed by doping a p-type material with a hole injection material, such as NBP: F4-TCNQ. The hole injection layer 30 has a thickness of 10 nm to 12 nm.
The hole transport layer 31 is disposed on the hole injection layer 30, and the hole transport material mostly adopts a classic tertiary aromatic amine hole transport material such as TPD and NPB, and the specific materials are as above, and are not described herein again. The hole transport layer 31 has a thickness of 120 to 150 nm.
And an electron blocking layer 40 provided on the hole transport layer 31, wherein the electron blocking layer 40 is made of a hole transport material having a high LUMO level, for example, TCTA. The electron blocking layer 40 has a thickness of 5 nm to 6 nm.
And a second hole blocking layer 60 disposed between the light emitting layer 50 and the cathode 70, wherein the second hole blocking layer 60 is made of an electron transport material having a lower HOMO level, such as TPBI. The thickness of the second hole blocking layer 60 is 5 nm to 6 nm.
The display panel that this application embodiment provided can reduce the injection potential barrier of negative pole 70 electron through setting up composite electrode type negative pole 70, improves electron injection efficiency to improve electron transport rate, make hole and electron transport reach balance, improve display panel's luminous efficacy, in addition, more excellent electron injection can satisfy and reduce organic electroluminescent device's operating voltage when raising the efficiency, extension display panel's life.
As an embodiment of the present application, please refer to fig. 3, where fig. 3 is a schematic diagram of a third structure of a display panel provided in the embodiment of the present application. As shown in fig. 3, the present embodiment provides a display panel 300, where the display panel 300 is different from the display panel 200 in that: the display panel 300 includes an encapsulation layer 90, and the encapsulation layer 90 is disposed on a side of the first hole blocking layer 80 away from the light-emitting layer 50.
In the embodiment of the present application, the display panel 300 further includes: a substrate 10, an anode 20, a light emitting layer 50, and a cathode 70; the anode 20 is arranged on the substrate 10; the light emitting layer 50 is provided on the anode 20; the cathode 70 is disposed on a side of the light emitting layer 50 away from the substrate 10, the cathode 70 includes a first electrode 71 and a second electrode 72, the first electrode 71 includes an electron transport material and an active metal material, the second electrode 72 includes a hole transport material and a p-type material, and the second electrode 72 is disposed on a side of the first electrode 71 away from the light emitting layer 50.
In the embodiment of the present application, the substrate 10 may be a conductive glass substrate 10 selected from indium tin oxide glass (ITO glass), fluorine-doped tin oxide glass (FTO glass), aluminum-doped zinc oxide glass (AZO glass), or indium-doped zinc oxide glass (IZO glass). Preferably, the thickness of the anode 20 on the substrate 10 is 100 nm to 150 nm, and the anode comprises a 10 nm ITO layer, a 100 nm metallic silver layer and a 10 nm ITO layer in sequence.
In the embodiment of the present application, the material of the light emitting layer 50 is a mixed material formed by doping a host material with a green guest material. Preferably, the host material includes at least one of 4,4',4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA), 9' - (1, 3-phenyl) di-9H-carbazole (mCP), 4' -bis (9-Carbazole) Biphenyl (CBP), N ' -bis (3-methylphenyl) -N, N ' -diphenyl-4, 4' -biphenyldiamine (TPD), 1-bis [4- [ N, N ' -bis (p-tolyl) amino ] phenyl ] cyclohexane (TAPC), 9, 10-bis (1-naphthyl) Anthracene (ADN), or the like.
Wherein the green guest material comprises at least one of tris (2-phenylpyridine) iridium (ir (ppy)3), bis (2-phenylpyridine) iridium acetylacetonate (ir (ppy)2(acac)), tris [2- (p-tolyl) pyridine ] iridium (ir (mppy)3), or the like. The green guest material can be other guest materials such as blue light, white light and the like. Preferably, the thickness of the light emitting layer 50 is 20 nm to 50 nm.
In the embodiment of the present application, the cathode 70 includes a first electrode 71 and a second electrode 72, wherein the first electrode 71 includes an electron transport material and an active metal material, and the mass fraction of the active metal material in the first electrode 71 is 1% to 3%.
In the examples of the present application, at least one of 4, 7-diphenyl-1, 10-phenanthroline (Bphen), 4, 7-diphenyl-1, 10-phenanthroline (BCP), 4-biphenol-bis (2-methyl-8-hydroxyquinoline) aluminum (BAlq), 8-hydroxyquinoline aluminum (Alq3), 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-Triazole (TAZ), 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene (TPBI), and the like, which have high electron mobility, is used as the electron transport material.
In an embodiment of the present application, the active metal material comprises at least one of ytterbium, lithium, sodium, potassium, beryllium, calcium, magnesium, cesium, barium, and the like. Preferably, the active metal material is ytterbium.
In the embodiment of the present application, the thickness of the first electrode 71 is 10 nm to 20 nm.
In the embodiment of the present application, the second electrode 72 includes a hole transport material and a p-type material, and includes at least one of antimony chloride, molybdenum oxide, tungsten oxide, vanadium oxide, and rhenium oxide, and preferably includes SbCl5And oxide MoO3、WO3、V2O5Or ReO3And the like, the mass fraction of the hole injection material in the second electrode 72 is 3% to 5%.
In the examples of the present application, at least one of N, N '-diphenyl-N, N' -bis (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPB), 4',4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA), 4' -bis (9-Carbazole) Biphenyl (CBP), N '-bis (3-methylphenyl) -N, N' -diphenyl-4, 4 '-biphenyldiamine (TPD), 1-bis [4- [ N, N' -bis (p-tolyl) amino ] phenyl ] cyclohexane (TAPC), and the like is used as the hole transport material.
In the embodiment of the present application, the display panel 300 further includes:
and the first hole blocking layer 80 is arranged on the side, away from the light-emitting layer 50, of the second electrode 72, and the thickness of the first hole blocking layer 80 is 10 nanometers. Preferably, the material of the first hole blocking layer 80 is ytterbium.
And a hole injection layer 30 disposed on the anode, wherein the hole injection layer is a mixed material formed by doping a P-type material with a hole injection material, such as NBP: F4-TCNQ. The hole injection layer 30 has a thickness of 10 nm to 12 nm.
The hole transport layer 31 is disposed on the hole injection layer 30, and the hole transport material mostly adopts a classic tertiary aromatic amine hole transport material such as TPD and NPB, and the specific materials are as above, and are not described herein again. The hole transport layer 31 has a thickness of 120 to 150 nm.
And an electron blocking layer 40 provided on the hole transport layer 31, wherein the electron blocking layer 40 is made of a hole transport material having a high LUMO level, for example, TCTA. The electron blocking layer 40 has a thickness of 5 nm to 6 nm.
And a second hole blocking layer 60 disposed between the light emitting layer 50 and the cathode 70, wherein the second hole blocking layer 60 is made of an electron transport material having a lower HOMO level, such as TPBI. The thickness of the second hole blocking layer 60 is 5 nm to 6 nm.
The cathode 70 structure of the existing OLED display device mostly adopts the mode of alloy (such as Mg: Ag) or multilayer metal (such as Li/Al), and in the aging process of the service life of the device, the invasion of active components such as water, oxygen and the like caused by poor packaging can corrode and damage the electrode to form non-luminous black spots. The application provides a display panel through setting up composite electrode type negative pole 70 to and be provided with encapsulation layer 90, can effectively reduce the corruption of active ingredient such as water oxygen that the encapsulation is bad to the electrode, promote display panel's life.
As an embodiment of the present application, please refer to fig. 4, where fig. 4 is a schematic diagram of a fourth structure of a display panel provided in the embodiment of the present application. As shown in fig. 4, the embodiment of the present application provides a display panel 400, where the display panel 400 is different from the display panel 300 in that: the cathode 70 further includes a third electrode 73, and the third electrode 73 is provided on a side of the first electrode 71 adjacent to the light-emitting layer 50.
The application provides a display panel through setting up composite electrode type negative pole 70 to and be provided with encapsulation layer 90, can effectively reduce the corruption of active ingredient such as water oxygen that the encapsulation is bad to the electrode, promote display panel's life.
On the other hand, please refer to fig. 5, fig. 5 is a schematic view illustrating a manufacturing process of a display panel according to an embodiment of the present disclosure; as shown in fig. 5, the present application further provides a manufacturing method of a display panel, including the following steps:
s10, providing a substrate 10, and forming an anode 20 on the substrate 10;
specifically, a substrate 10 is provided, the substrate 10 may be a glass substrate 10, after the fabrication of the thin film transistor layer is completed on the glass substrate 10, the glass substrate 10 is sequentially cleaned with detergent, deionized water, acetone and ethanol under the ultrasonic condition, each cleaning is performed for 5 minutes, the cleaning is stopped for 5 minutes, the cleaning is respectively repeated for 3 times, and then the glass substrate 10 is dried by an oven, so that the cleaned glass substrate 10 is obtained; the glass substrate 10 after cleaning is subjected to ultraviolet ozone treatment for 10 minutes to 30 minutes at a power of 10 watts to 50 watts. An ITO layer with the thickness of 10 nanometers, a metal silver layer with the thickness of 100 nanometers and an ITO layer with the thickness of 10 nanometers are sequentially manufactured on the glass substrate 10.
S20, forming a light emitting layer 50 on the anode 20;
in the embodiment of the present application, the step of forming the light emitting layer 50 on the anode 20 specifically includes:
forming a hole injection layer 30 on the anode 20 layer 20: in the organic evaporation chamber, a mixed material obtained by F4-TCNQ doped NBP is evaporated on the ITO glass substrate 10, the mass fraction of F4-TCNQ in the hole injection layer 30 can be 30%, and the vacuum degree during evaporation can be 5 multiplied by 10-5Pa, evaporation rate can be 0.1 angstrom per second, resulting in a hole injection layer 30 with a thickness of 10 nanometers;
forming a hole transport layer 31 on the hole injection layer 30: NBP is deposited on the hole injection layer 30 in a vacuum degree of 5X 10-5Pa, evaporation rate can be 0.1 angstrom per second, resulting in a hole transport layer 31 with a thickness of 120 to 150 nm;
forming an electron blocking layer 40 on the hole transport layer 31: TCTA is vapor-deposited on the hole transport layer 31 in a degree of vacuum of 5X 10-5Pa, evaporation rate can be 0.1 angstrom per second, resulting in a hole transport layer 31 with a thickness of 5 nanometers;
forming a light emitting layer 50 on the electron blocking layer 40: a mixed material formed by doping a host material TCTA and a green guest material Ir (ppy)3 is evaporated on the electron blocking layer 40, the mass fraction of the green guest material in the luminescent layer can be 5%, and the vacuum degree during evaporation can be 5 multiplied by 10-5Pa, evaporation rate can be 0.1 angstrom per second, resulting in a light emitting layer 50 with a thickness of 20 nm to 50 nm.
S30, forming a cathode 70 on the light-emitting layer 50, where the cathode 70 includes a first electrode 71 and a second electrode 72, the first electrode 71 includes an electron transport material and an active metal material, the second electrode 72 includes a hole transport material and a p-type material, and the second electrode 72 is formed on a side of the first electrode 71 away from the light-emitting layer 50.
In the embodiment of the present application, the step of forming the cathode 70 on the light-emitting layer 50 specifically includes:
forming a second hole blocking layer 60 on the light emitting layer 50: TPBI is vapor-deposited on the light-emitting layer 50 at a degree of vacuum of 5X 10-5Pa, evaporation rate can be 0.1 angstrom per second, yielding a second hole blocking layer 60, 5 nanometers thick;
forming a first electrode 71 on the second hole blocking layer 60: evaporating on the second hole blocking layer 60Plating a mixed material formed by doping a host material BCP and Yb (ytterbium), wherein the mass fraction of the Yb in the first electrode is 1 to 3 percent, and the vacuum degree during evaporation can be 5 multiplied by 10-5Pa, evaporation rate can be 0.1 angstrom per second, resulting in a first electrode 71 of cathode 70, with a thickness of 10 to 20 nm;
forming a second electrode 72 on the first electrode 71: the body materials TPD and WO are vapor-deposited on the first electrode 713Doped to form hybrid materials, WO3The second electrode 72 may have a mass fraction of 3% to 5%, and a degree of vacuum at the time of vapor deposition may be 5 × 10- 5Pa, evaporation rate can be 0.1 angstrom per second, resulting in a second electrode 72 of cathode 70, with a thickness of 10 to 20 nanometers;
forming a first hole blocking layer 80 on the second electrode 72: yb is vapor-deposited on the second electrode 72 in a degree of vacuum of 5X 10-5Pa and the evaporation rate may be 0.1 angstrom per second, resulting in a first hole blocking layer 80 having a thickness of 10 nanometers.
In the embodiment, the material of the first hole blocking layer 80 is ytterbium, and the material of the second hole blocking layer 60 is an electron transport material.
In the embodiment of the application, the method further comprises the following steps: an encapsulation layer 90 is formed on the first hole blocking layer 80, and an SIO film, an SINO film, and an SIO film are sequentially deposited on the first hole blocking layer 80 in a Chemical Vapor Deposition (CVD) chamber and transferred into a lamination chamber to complete encapsulation.
The display panel provided by the embodiment of the application can reduce the electron injection barrier of the cathode 70 and improve the electron injection efficiency by arranging the composite electrode type cathode 70, so that the electron transmission rate is improved, the hole and electron transmission are balanced, the luminous efficiency of the display panel is improved, and the better electron injection can meet the requirement of reducing the working voltage of an organic electroluminescent device while improving the efficiency; meanwhile, the encapsulation layer 90 is arranged, so that corrosion of active components such as water, oxygen and the like to the electrode caused by poor encapsulation can be effectively reduced, and the service life of the display panel is prolonged.
The display panel and the manufacturing method thereof provided by the embodiments of the present application are described in detail above, and the principle and the embodiment of the present application are explained herein by applying specific examples, and the description of the embodiments above is only used to help understanding the method and the core idea of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. A display panel, comprising:
a substrate;
an anode disposed on the substrate;
a light emitting layer disposed on the anode;
the cathode is arranged on one side, far away from the substrate, of the light emitting layer and comprises a first electrode and a second electrode, the first electrode comprises an electron transport material and an active metal material, the second electrode comprises a hole transport material and a p-type material, and the second electrode is arranged on one side, far away from the light emitting layer, of the first electrode.
2. The display panel according to claim 1, wherein the active metal material comprises at least one of ytterbium, lithium, sodium, potassium, beryllium, calcium, magnesium, cesium and barium, and the mass fraction of the active metal material in the first electrode is 1% to 3%.
3. The display panel according to claim 1 or 2, wherein the thickness of the first electrode is 10 nm to 20 nm.
4. The display panel according to claim 1, wherein the p-type material comprises at least one of antimony chloride, molybdenum oxide, tungsten oxide, vanadium oxide, and rhenium oxide, and the mass fraction of the p-type material in the second electrode is 3% to 5%.
5. The display panel according to claim 1, further comprising a first hole blocking layer provided on a side of the second electrode away from the light-emitting layer.
6. The display panel according to claim 5, wherein the first hole blocking layer has a thickness of 10 nm to 15 nm.
7. A display panel as claimed in claim 5 or 6 characterized in that the material of the first hole blocking layer is ytterbium.
8. The display panel according to claim 1, wherein the electron transport material comprises at least one of 4, 7-diphenyl-1, 10-phenanthroline, 4-biphenol-bis (2-methyl-8-hydroxyquinoline) aluminum, 8-hydroxyquinoline aluminum, 3- (biphenyl-4-yl) -5- (4-tert-butylphenyl) -4-phenyl-4H-1, 2, 4-triazole, 1,3, 5-tris (1-phenyl-1H-benzimidazol-2-yl) benzene;
the hole transport material includes at least one of N, N '-diphenyl-N, N' -di (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, 4',4 ″ -tris (carbazol-9-yl) triphenylamine, 4' -di (9-carbazol) biphenyl, N '-di (3-methylphenyl) -N, N' -diphenyl-4, 4 '-biphenyldiamine, 1-di [4- [ N, N' -di (p-tolyl) amino ] phenyl ] cyclohexane.
9. The display panel according to claim 1, wherein the cathode further comprises a third electrode provided on a side of the first electrode adjacent to the light-emitting layer.
10. A manufacturing method of a display panel is characterized by comprising the following steps:
providing a substrate, and forming an anode on the substrate;
forming a light emitting layer on the anode;
and forming a cathode on the light-emitting layer, wherein the cathode comprises a first electrode and a second electrode, the first electrode comprises an electron transport material and an active metal material, the second electrode comprises a hole transport material and a p-type material, and the second electrode is formed on one side of the first electrode, which is far away from the light-emitting layer.
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