CN114157267B - Packaging structure of bulk acoustic wave filter chip - Google Patents
Packaging structure of bulk acoustic wave filter chip Download PDFInfo
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- CN114157267B CN114157267B CN202210116891.1A CN202210116891A CN114157267B CN 114157267 B CN114157267 B CN 114157267B CN 202210116891 A CN202210116891 A CN 202210116891A CN 114157267 B CN114157267 B CN 114157267B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 35
- 239000010408 film Substances 0.000 claims description 24
- 238000003466 welding Methods 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 8
- 238000013461 design Methods 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 238000012360 testing method Methods 0.000 claims description 2
- 230000010354 integration Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000001629 suppression Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
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- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
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- 230000005764 inhibitory process Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/58—Multiple crystal filters
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a packaging structure of a bulk acoustic wave filter chip, which comprises a phase compensator, a plurality of first bulk acoustic wave resonator units, a second bulk acoustic wave resonator unit and an inductor, wherein the phase compensator is used for compensating the phase of a bulk acoustic wave; the first integral acoustic wave resonator units are sequentially connected in series; one end of the second bulk acoustic wave resonator unit is connected between the adjacent first bulk acoustic wave resonator units; the inductor is connected with the other end of the second bulk acoustic wave resonator unit; the phase compensator is connected with a pin of any one of the first bulk acoustic wave resonator units. According to the bulk acoustic wave filter chip, the phase compensator is connected to the pin of at least one first bulk acoustic wave resonator unit for phase compensation, the matching performance and the integration degree of the phase compensator and the bulk acoustic wave filter chip are improved, the bulk acoustic wave distortion is reduced or reduced, a phase compensation circuit is not required to be arranged during use, the arrangement of an external matching circuit can be simplified, the bulk acoustic wave filter chip is more convenient to use, and the miniaturization of an application product is facilitated.
Description
Technical Field
The invention relates to the technical field of bulk acoustic wave filter chips, in particular to a packaging structure of a bulk acoustic wave filter chip.
Background
Compared with a surface acoustic wave filter chip, the Bulk Acoustic Wave (BAW) filter chip has the characteristics of high quality factor, low insertion loss, high temperature stability and the like, can be applied to a higher frequency band, can have high selectivity and strong out-of-band inhibition, and can be suitable for a 5G technology.
The existing bulk acoustic wave filter chip has the following defects: firstly, the output bulk acoustic wave and the input bulk acoustic wave after the processing of the bulk acoustic wave filter chip have phase deviation, and when the phase-shifting circuit is used, a corresponding compensation circuit needs to be arranged for the bulk acoustic wave filter chip to perform phase compensation; secondly, the size of the bulk acoustic wave filter chip is further reduced.
Disclosure of Invention
In order to solve the above technical problem, the present invention provides a package structure of a bulk acoustic wave filter chip, including a phase compensator, a plurality of first bulk acoustic wave resonator units, a second bulk acoustic wave resonator unit, and an inductor;
the first integral acoustic wave resonator units are sequentially connected in series; one end of the second bulk acoustic wave resonator unit is connected between the adjacent first bulk acoustic wave resonator units;
the inductor is connected with the other end of the second bulk acoustic wave resonator unit;
the phase compensator is connected with a pin of any one of the first bulk acoustic wave resonator units.
Optionally, the first bulk acoustic wave resonator unit and the second bulk acoustic wave resonator unit both include a bulk acoustic wave resonator, and the bulk acoustic wave resonator employs a film bulk acoustic wave resonator.
Optionally, the second bulk acoustic wave resonator units and the inductors are arranged in a one-to-one correspondence, and at least one inductor is connected to a pin between another inductor and the corresponding second bulk acoustic wave resonator unit at a position far from one end of the second bulk acoustic wave resonator unit to which the inductor is connected.
Optionally, the first bulk acoustic wave resonator unit includes a plurality of bulk acoustic wave resonators which are connected in series in sequence.
Optionally, the second bulk acoustic wave resonator unit includes a plurality of bulk acoustic wave resonators which are connected in parallel in sequence.
Optionally, the bulk acoustic wave resonator includes a bottom electrode, a piezoelectric film, and a top electrode sequentially disposed on a substrate;
a supporting layer is arranged between the bottom electrode and the substrate;
and a cavity is arranged at the substrate position at the lower part of the supporting layer.
Optionally, the bulk acoustic wave resonator is provided with a packaging layer, the packaging layer includes an inner cavity, and the bulk acoustic wave resonator is disposed in the inner cavity.
Optionally, a first bonding pad is embedded in the bottom electrode at the side of the substrate; the top electrode is provided with a second welding disc extending to the substrate;
and the substrate is provided with a column hole extending to the surface departing from the bulk acoustic wave resonator at the first welding disc and the second welding disc, and the column hole is filled with a conductive electrode.
Optionally, the inductor and/or the phase compensator are disposed on a surface of the substrate facing away from the bulk acoustic wave resonator.
Optionally, a thermal insulation layer is disposed on the upper surface of the top electrode, and the thickness of the thermal insulation layer is not less than half of the thickness of the piezoelectric film.
According to the packaging structure of the bulk acoustic wave filter chip, the bulk acoustic wave filter chip is in a trapezoidal structure formed by the first bulk acoustic wave resonator units and the second bulk acoustic wave resonator units, the second bulk acoustic wave resonator unit is connected with the inductor, the inductance value of the inductor is debugged, the position of the inductor influencing the frequency response of the filter and the introduced inductance initial value are determined, the fast roll-off and high suppression effect of the bulk acoustic wave filter chip can be optimized, the insertion loss is reduced by adopting fewer elements, and better out-of-band suppression performance is guaranteed; in addition, the phase compensator is connected to the pin of at least one first bulk acoustic wave resonator unit, the phase offset of bulk acoustic waves processed by the bulk acoustic wave filter chip can be compensated, the matching performance and the integration degree of the phase compensator and the bulk acoustic wave filter chip are improved, the bulk acoustic wave distortion is further reduced or reduced, in use, the situation that a compensation circuit needs to be arranged for phase compensation aiming at the bulk acoustic wave filter chip is avoided, the external matching circuit setting of application can be simplified, the use of the bulk acoustic wave filter chip is more convenient, and the miniaturization of application products is facilitated.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
fig. 1 is a schematic diagram of a package structure of a bulk acoustic wave filter chip according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a second package structure of a bulk acoustic wave filter chip according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional view of a bulk acoustic wave resonator adopted in an embodiment of a package structure of a bulk acoustic wave filter chip according to the present invention.
In the figure: 1-substrate, 2-bottom electrode, 3-piezoelectric film, 4-top electrode, 5-supporting layer, 6-cavity, 7-first welding pad, 8-second welding pad, 9-conductive electrode, 10-packaging layer and 11-inner cavity.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it should be understood that they are presented herein only to illustrate and explain the present invention and not to limit the present invention.
As shown in fig. 1, an embodiment of the present invention provides a package structure of a bulk acoustic wave filter chip, including a phase compensator, a plurality of first bulk acoustic wave resonator units, a second bulk acoustic wave resonator unit, and an inductor;
the first integral acoustic wave resonator units are sequentially connected in series; one end of the second bulk acoustic wave resonator unit is connected between the adjacent first bulk acoustic wave resonator units;
the inductor is connected with the other end of the second bulk acoustic wave resonator unit;
the phase compensator is connected with a pin of any one of the first bulk acoustic wave resonator units.
The working principle and the beneficial effects of the technical scheme are as follows: the bulk acoustic wave filter chip of the scheme has the advantages that the plurality of first bulk acoustic wave resonator units and the second bulk acoustic wave resonator units form a trapezoidal structure, the second bulk acoustic wave resonator unit is connected with the inductor, the inductance value of the inductor is debugged, the position of the inductor influencing the frequency response of the filter and the introduced initial inductance value are determined, the fast roll-off and high suppression effect of the bulk acoustic wave filter chip can be optimized, the insertion loss is reduced by adopting fewer elements, and the better out-of-band suppression performance is guaranteed; in addition, the phase compensator is connected to the pin of the at least one first bulk acoustic wave resonator unit, the phase offset of bulk acoustic waves processed by the bulk acoustic wave filter chip can be compensated, the matching performance and the integration degree of the phase compensator and the bulk acoustic wave filter chip are improved, the bulk acoustic wave distortion is further reduced or reduced, in use, the situation that a compensation circuit needs to be arranged for the bulk acoustic wave filter chip again to perform phase compensation is avoided, the external matching circuit setting of application can be simplified, the use of the bulk acoustic wave filter chip is more convenient, and the miniaturization of application products is facilitated.
In one embodiment, the first bulk acoustic wave resonator unit comprises a plurality of bulk acoustic wave resonators which are connected in series in sequence; the second bulk acoustic wave resonator unit comprises a plurality of bulk acoustic wave resonators which are connected in parallel in sequence.
The working principle and the beneficial effects of the technical scheme are as follows: according to the scheme, the plurality of bulk acoustic wave resonators are sequentially connected in series to form the first bulk acoustic wave resonator unit, the plurality of bulk acoustic wave resonators are sequentially connected in parallel to form the second bulk acoustic wave resonator unit, the first bulk acoustic wave resonator unit and the second bulk acoustic wave resonator unit are arranged according to needs, the bulk acoustic wave resonator can adapt to different use requirements, can be freely expanded, and the flexibility of the design of a bulk acoustic wave filter chip is improved.
In one embodiment, as shown in fig. 2, the second bulk acoustic wave resonator units and the inductors are provided in a plurality in one-to-one correspondence, and at least one inductor is present to be connected with a pin between another inductor and the corresponding second bulk acoustic wave resonator unit at an end of the second bulk acoustic wave resonator unit away from its connection.
The working principle and the beneficial effects of the technical scheme are as follows: in the scheme, the rear end of at least one inductor is connected to the front end of the inductor of the branch of the other parallel second bulk acoustic wave resonator unit, so that the inductance value of the inductor of the branch of the other parallel second bulk acoustic wave resonator unit is reduced to half of the original inductance value, the zero point position is unchanged by introduction, and the inductance effect is unchanged; this scheme of adoption can be on the basis of guarantee outband suppression, owing to can select for use the inductor that inductance value is less, can reduce the inductor and occupy the position to further reduce the chip volume.
In one embodiment, the first bulk acoustic wave resonator unit and the second bulk acoustic wave resonator unit both comprise a bulk acoustic wave resonator, and the bulk acoustic wave resonator adopts a film bulk acoustic wave resonator;
as shown in fig. 3, the bulk acoustic wave resonator includes a bottom electrode 2, a piezoelectric thin film 3, and a top electrode 4 sequentially disposed on a substrate 1;
a supporting layer 5 is arranged between the bottom electrode 2 and the substrate 1;
and a cavity 6 is arranged at the position of the substrate 1 at the lower part of the supporting layer 5, and the cavity 6 adopts a vacuum cavity.
The working principle and the beneficial effects of the technical scheme are as follows: the scheme adopts the technical scheme that a bottom electrode, a piezoelectric film and a top electrode are arranged on a substrate to form a bulk acoustic wave resonator, the bottom electrode is fixedly connected with the substrate through a supporting layer, the piezoelectric film is arranged on the surface of the bottom electrode, which is far away from the substrate, and the top electrode is arranged on the surface of the piezoelectric film, which is far away from the bottom electrode, namely the piezoelectric film is arranged between the bottom electrode and the top electrode; the bulk acoustic wave resonator can adopt a Film Bulk Acoustic Resonator (FBAR), and the manufacturing cost is low.
In one embodiment, as shown in fig. 3, the bulk acoustic wave resonator is provided with an encapsulation layer 10, the encapsulation layer 10 includes an inner cavity 11, and the bulk acoustic wave resonator is disposed in the inner cavity 11;
a first welding pad 7 is embedded in the bottom electrode 2 at the substrate 1 side; the top electrode 4 is provided with a second bonding pad 8 extending to the substrate 1;
the substrate 1 is provided with a column hole extending to a position departing from the surface of the bulk acoustic wave resonator at the first bonding pad 7 and the second bonding pad 8, and the column hole is filled with a conductive electrode 9.
The working principle and the beneficial effects of the technical scheme are as follows: the packaging layer is arranged to wrap the bulk acoustic wave resonator in the inner cavity of the packaging layer, the sealed cavity is formed between the packaging layer and the bulk acoustic wave resonator, the moisture-proof and waterproof performance and the service life of the bulk acoustic wave resonator are improved, and the inhibition of air in the sealed cavity on the transmission of the bulk acoustic wave resonator cannot generate adverse effects on the performance of the bulk acoustic wave resonator; in addition, the first welding pad connected with the bottom electrode and the second welding pad connected with the top electrode are both arranged to face the substrate direction, and the conductive electrode filled in the column hole extends to the other surface of the substrate, so that other related components of the chip can be arranged on the other surface of the substrate opposite to the bulk acoustic wave resonator to realize related connection, and therefore the two surface spaces of the substrate can be fully utilized to carry out design layout, the size of the chip is further reduced, and further miniaturization of the chip is facilitated.
In one embodiment, the inductor and/or the phase compensator are arranged at a surface of the substrate facing away from the bulk acoustic wave resonator.
The working principle and the beneficial effects of the technical scheme are as follows: according to the scheme, on the basis that the first welding disk connected with the bottom electrode and the second welding disk connected with the top electrode extend to the other side of the substrate through the conductive electrode filled in the column hole, the inductor and/or the phase compensator are/is arranged on the surface of the substrate, which is far away from the bulk acoustic wave resonator, so that the two surface spaces of the substrate can be fully utilized for design layout, the size of a chip is further reduced, and the further miniaturization of the chip is facilitated.
In one embodiment, the upper surface of the top electrode is provided with a thermal insulation layer, and the thickness of the thermal insulation layer is not less than half of the thickness of the piezoelectric film; the thermal insulation layer can be made by Low Pressure Chemical Vapor Deposition (LPCVD), and the material of the thermal insulation layer can be silicon dioxide (SiO)2) The material forms a thin film layer.
The working principle and the beneficial effects of the technical scheme are as follows: according to the scheme, the heat insulation layer is arranged, so that heat transfer of the bulk acoustic wave resonator is prevented or delayed, when the bulk acoustic wave resonator is used, the temperatures of the bottom electrode, the piezoelectric film and the top electrode of the bulk acoustic wave resonator are basically consistent, and therefore deflection caused by the influence of temperature difference when the bulk acoustic waves are transferred in the bottom electrode, the piezoelectric film and the top electrode is reduced, and a temperature compensation effect is formed. The scheme adopts silicon dioxide (SiO) for example on a film bulk acoustic resonator structure with a trapezoidal framework2) The thermal insulation layer made of the material can solve the problem of drift of the film bulk acoustic resonator caused by temperature difference of different layers, and the drift can generate mutual interference when the film bulk acoustic resonator is used in a mobile television and a mobile phone at the same time and bring adverse effects on the performance of a filter chip. For example, in mobile TV and mobile phone, two set partitions are adoptedA bulk acoustic wave filter chip manufactured by a film bulk acoustic resonator of a thermal layer has low insertion loss (0-3 dB), high out-of-band rejection (35-40 dB) and rapid roll-off characteristics (namely the roll-off from a pass band to a stop band is 10 MHz), and has an extremely low frequency temperature coefficient (TCF-4 ppm/° C).
In one embodiment, the phase compensator includes a capacitor, the capacitance of which is calculated using the following equation:
in the above formula, the first and second carbon atoms are,
represents the capacitance of the phase compensator capacitor;
the maximum frequency of the bulk acoustic wave applicable to the bulk acoustic wave filter chip is shown, and the maximum frequency is set after the maximum frequency is determined during design;
the equivalent resistance of the bulk acoustic wave filter chip is represented, is related to the number, the connection mode, the inductor and the like of the bulk acoustic wave resonators adopted by the bulk acoustic wave filter chip, and is determined according to the specific design of the bulk acoustic wave filter chip or obtained through experimental tests.
The working principle and the beneficial effects of the technical scheme are as follows: the phase compensator of the scheme mainly carries out phase compensation by arranging the capacitor, and in order to achieve a good phase compensation effect, the capacitor needs to be well matched with a bulk acoustic wave filter chip; the equivalent resistance of the bulk acoustic wave filter chip is adopted in the formula to reflect the characteristics of the bulk acoustic wave filter, so that the capacitance of the phase compensator capacitor is calculated and determined to form the quantitative relation between the equivalent resistance and the capacitance, the maximum frequency of the bulk acoustic wave filter chip suitable for the bulk acoustic wave is introduced to define the application range or the scene of the chip, and the formula can realize the better phase compensation effect of processing the bulk acoustic wave on the bulk acoustic wave filter chip.
The bulk acoustic resonator can adopt a Film Bulk Acoustic Resonator (FBAR), a piezoelectric film of the Film Bulk Acoustic Resonator (FBAR) is made of piezoelectric materials, such as aluminum nitride (AlN) materials, Zinc Oxide (Zinc Oxide) materials or piezoelectric ceramics (PZT) and the like, if the aluminum nitride (AlN) is adopted, the film can be formed through a growth process of a medium-frequency magnetron sputtering film coating machine, the thickness uniformity of the sputtered film is controlled through sputtering power, chamber pressure and substrate bias voltage, and the film making quality is guaranteed. The substrate may be a composite substrate, and a wafer material may be used, and the wafer material may include silicon wafer (Si) and silicon dioxide (SiO)2) Silicon nitride (Si)3N4) And molybdenum (Mo) material, which is easily fabricated using deposition and etching processes. The packaging layer can also be made of a wafer material, and the inner cavity is manufactured through an etching process, so that the manufacturing precision and efficiency are improved, and the manufacturing cost is reduced.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (10)
1. A packaging structure of a bulk acoustic wave filter chip is characterized by comprising a phase compensator, a plurality of first bulk acoustic wave resonator units, a plurality of second bulk acoustic wave resonator units and an inductor;
the first integral acoustic wave resonator units are sequentially connected in series; one end of the second bulk acoustic wave resonator unit is connected between the adjacent first bulk acoustic wave resonator units;
the inductor is connected with the other end of the second bulk acoustic wave resonator unit;
the phase compensator is connected with a pin of any one first integral acoustic wave resonator unit;
the phase compensator comprises a capacitor, and the capacitance of the capacitor is calculated and determined by adopting the following formula:
in the above formula, the first and second carbon atoms are,
represents the capacitance of the phase compensator capacitor;
the maximum frequency of the bulk acoustic wave applicable to the bulk acoustic wave filter chip is shown, and the maximum frequency is set after the maximum frequency is determined during design;
and the equivalent resistance of the bulk acoustic wave filter chip is shown, and is determined according to the specific design of the bulk acoustic wave filter chip or obtained through experimental tests.
2. The package structure of the bulk acoustic wave filter chip according to claim 1, wherein the first bulk acoustic wave resonator unit and the second bulk acoustic wave resonator unit each include a bulk acoustic wave resonator, and the bulk acoustic wave resonator is a thin film bulk acoustic wave resonator.
3. The package structure of a bulk acoustic wave filter chip according to claim 1, wherein the second bulk acoustic wave resonator units and the inductors are provided in plural in one-to-one correspondence, and at least one of the inductors is connected to a pin between another inductor and the corresponding second bulk acoustic wave resonator unit at an end of the second bulk acoustic wave resonator unit away from the connection thereof.
4. The package structure of a bulk acoustic wave filter chip according to claim 1, wherein the first bulk acoustic wave resonator unit includes a plurality of bulk acoustic wave resonators which are connected in series in sequence.
5. The package structure of the bulk acoustic wave filter chip according to claim 1, wherein the second bulk acoustic wave resonator unit comprises a plurality of bulk acoustic wave resonators which are connected in parallel in sequence.
6. The package structure of a bulk acoustic wave filter chip according to claim 2, wherein the bulk acoustic wave resonator comprises a bottom electrode, a piezoelectric film, and a top electrode sequentially disposed on a substrate;
a supporting layer is arranged between the bottom electrode and the substrate;
and a cavity is arranged at the substrate position at the lower part of the supporting layer.
7. The package structure of the bulk acoustic wave filter chip according to claim 6, wherein the bulk acoustic wave resonator is provided with a package layer, the package layer comprises an inner cavity, and the bulk acoustic wave resonator is disposed in the inner cavity.
8. The package structure of a bulk acoustic wave filter chip according to claim 6, wherein the bottom electrode has a first bonding pad buried in a substrate side; the top electrode is provided with a second welding disc extending to the substrate;
and the substrate is provided with a column hole extending to the surface departing from the bulk acoustic wave resonator at the first welding disc and the second welding disc, and the column hole is filled with a conductive electrode.
9. The package structure of a bulk acoustic wave filter chip according to claim 7, wherein the inductor and/or the phase compensator are disposed on a surface of the substrate facing away from the bulk acoustic wave resonator.
10. The package structure of the bulk acoustic wave filter chip according to any one of claims 6 to 9, wherein a thermal insulation layer is disposed on an upper surface of the top electrode, and a thickness of the thermal insulation layer is not less than half of a thickness of the piezoelectric thin film.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100777451B1 (en) * | 2006-10-31 | 2007-11-21 | 삼성전자주식회사 | Film bulk acoustic resonator filter and duplexer |
| CN108123698A (en) * | 2018-02-08 | 2018-06-05 | 武汉衍熙微器件有限公司 | A kind of wave filter with Out-of-band rejection |
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| KR100635268B1 (en) * | 2004-05-17 | 2006-10-19 | 삼성전자주식회사 | Filter comprising inductor, duplexer using the filter and fabricating methods thereof |
| JP2006019935A (en) * | 2004-06-30 | 2006-01-19 | Toshiba Corp | Thin film piezoelectric resonator and manufacturing method thereof |
| CN102111124A (en) * | 2009-12-24 | 2011-06-29 | 华为技术有限公司 | Film bulk acoustic resonator (FBAR) filter and components thereof |
| JP2011193080A (en) * | 2010-03-12 | 2011-09-29 | Ube Industries Ltd | Branching filter |
| JP5588838B2 (en) * | 2010-11-17 | 2014-09-10 | 太陽誘電株式会社 | Filter circuit, duplexer and RF module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100777451B1 (en) * | 2006-10-31 | 2007-11-21 | 삼성전자주식회사 | Film bulk acoustic resonator filter and duplexer |
| CN108123698A (en) * | 2018-02-08 | 2018-06-05 | 武汉衍熙微器件有限公司 | A kind of wave filter with Out-of-band rejection |
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