CN114141975A - Method for improving roughness of anode film layer of OLED device and laser - Google Patents
Method for improving roughness of anode film layer of OLED device and laser Download PDFInfo
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- CN114141975A CN114141975A CN202111441056.7A CN202111441056A CN114141975A CN 114141975 A CN114141975 A CN 114141975A CN 202111441056 A CN202111441056 A CN 202111441056A CN 114141975 A CN114141975 A CN 114141975A
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Abstract
The application provides a method for improving roughness of an anode film layer of an OLED device and a laser, comprising the following steps: providing a substrate; and arranging an anode film layer on the substrate, and carrying out laser treatment on one side of the anode film layer, which is far away from the substrate, so as to reduce the roughness of the anode film layer. According to the method for improving the roughness of the anode film layer of the OLED device, the roughness of the film layer is improved and the efficiency of the OLED device is improved by carrying out laser treatment on the anode film of the OLED device.
Description
Technical Field
The invention relates to the field of displays, in particular to a method for improving the roughness of an anode film layer of an OLED device and a laser.
Background
With the development of display technology, the application of OLED (Organic Light-Emitting Diode) screens is becoming more widespread, and the use of OLED screens is also developing towards medium and large sizes. The efficiency of the OLED screen is improved, the power consumption of the product is reduced, the use cost is reduced, and the green economic concept is better met.
However, the roughness of the anode film layer of the OLED screen affects the device efficiency. Generally, the smaller the roughness of the anode film layer, the higher the OLED screen efficiency. Under the existing manufacturing conditions, after the roughness of the anode film layer of the OLED screen reaches a certain value, the roughness cannot be improved through the optimization of the manufacturing process of the anode.
Disclosure of Invention
The embodiment of the application provides a method for improving the roughness of an anode film layer of an OLED device and a laser.
The embodiment of the application provides a method for improving roughness of an anode film layer of an OLED device, which comprises the following steps:
providing a substrate;
and arranging an anode film layer on the substrate, and carrying out laser treatment on one side of the anode film layer, which is far away from the substrate, so as to reduce the roughness of the anode film layer.
In some embodiments, the anodic film layer includes a plurality of first sub-film layers, and laser processing a side of the anodic film layer away from the substrate includes: and performing laser processing on one side of each first sub-film layer far away from the substrate.
In some embodiments, the anodic film layer includes a plurality of second sub-film layers and a third sub-film layer, the plurality of second sub-film layers are disposed between the third sub-film layer and the substrate, and the laser processing the side of the anodic film layer away from the substrate includes: and carrying out laser processing on one side of the third sub-film layer far away from the substrate.
In some embodiments, the material of the anode film layer includes one or more of indium zinc oxide, indium tin oxide, silver, silicon carbide hybrid polymer, and tungsten oxide.
In some embodiments, after the laser processing is performed on the side of the anode film layer away from the substrate, the method further includes cleaning the anode film layer to remove particles generated by the laser processing.
In some embodiments, the laser has a wavelength of 355 nm.
In some embodiments, the laser has an energy density of 75mJ/cm2
In some embodiments, before the laser processing the side of the anode film layer away from the substrate, etching the anode film layer is further included.
The embodiment of the application provides a laser, which is applied to the method for improving the roughness of the anode film layer of the OLED device.
In some embodiments, the laser is a nanosecond Q-switched laser.
The method for improving the roughness of the anode film layer of the OLED device comprises the following steps: set up the positive pole rete on the base plate to one side of keeping away from the base plate to the positive pole rete carries out laser beam treatment, in order to reduce the roughness of positive pole rete. Namely, the OLED anode film is subjected to post-treatment by adjusting laser process parameters. Because the thickness of the film layer can be kept by laser treatment, the roughness of the film layer can be improved by laser treatment on the premise of keeping the thickness of the film layer basically unchanged, and the efficiency of an OLED device is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings used in the description of the embodiments will be briefly introduced below. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort.
Fig. 1 is a schematic flowchart of a method for improving roughness of an anode film layer of an OLED device according to an embodiment of the present disclosure.
Fig. 2 is a graph comparing roughness of the anode film layer before and after the laser treatment provided in the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the application provides a method for improving the roughness of an anode film layer of an OLED device and a laser. The following detailed description is made with reference to the accompanying drawings.
The OLED device mainly refers to an OLED screen, wherein the OLED screen can be used for display devices such as mobile phones, notebook computers and televisions.
The principle of an OLED device is that an organic light-emitting layer is sandwiched between two electrodes, and electrons and holes will emit light when they meet in an organic material, i.e., the OLED is capable of self-emitting light. The OLED device has the advantages of low production cost, low weight, low energy consumption, flexibility and wide application range. The OLED device mainly comprises a substrate, an anode film layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode film layer. Wherein the substrate is mainly used for supporting other structures of the whole OLED device. The anode film layer forms holes when current flows, and the holes are positively charged ions. The hole transport layer and the electron transport layer are mainly composed of organic material molecules, the hole transport layer is mainly used for transporting holes from the anode film layer, and the electron transport layer is mainly used for transporting electrons from the cathode film layer. The luminescent layer is made of organic molecular materials, and when holes and electrons move to the luminescent layer, the holes and the electrons are bound together by the action of coulomb force to form electron-hole pairs, namely excitons; due to the imbalance of electron and hole transport, the main formation region of excitons generally does not cover the entire light-emitting layer, and thus diffusion migration occurs due to a concentration gradient; the exciton radiates a transition, emitting a photon, releasing energy. The above is a forming method of the OLED device, and the hole transport layer, the light emitting layer and the electron transport layer are mixed and filled between the anode film layer and the cathode film layer.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a method for improving roughness of an anode film layer of an OLED device according to an embodiment of the present disclosure.
The method for improving the roughness of the anode film layer of the OLED device comprises the following steps:
s100, providing a substrate;
s200, an anode film layer is arranged on the substrate, and laser processing is carried out on one side, far away from the substrate, of the anode film layer so as to reduce the roughness of the anode film layer.
As mentioned above, the substrate may be a glass substrate, a plastic substrate, a metal foil substrate, or the like, which is used to support other structures of the entire OLED device.
After the anode film layer is arranged on the substrate, under the action of an external power supply, holes are injected into the anode film layer, and the holes can be compounded with electrons only after moving to the hole transport layer to reach the light-emitting layer. Therefore, when the roughness of the anode film layer is smaller, the contact area with the hole transport layer is larger, and holes are easier to diffuse from the anode film layer to the hole transport layer, that is, the efficiency of hole transport is higher, and the efficiency of the OLED device is correspondingly improved. The rough surface of the anode film layer may affect the internal electric field distribution of the OLED device. The peak on the surface of the anode film layer will cause local high electric field, which will dissociate the exciton into positive negative carriers, resulting in a decrease in luminous intensity; and the high electric field will accelerate the degradation of the organic material, so that the stability of the OLED device is reduced.
Because of the limitation of manufacturing process, equipment, materials and the like, the roughness of the anode film layer is difficult to further reduce after reaching a certain value, but the roughness can be improved through a post-treatment mode, namely after the anode film layer is arranged on the substrate, a laser is used for carrying out laser treatment on one side of the anode film layer, which is far away from the substrate, so as to reduce the roughness of the anode film layer. And irradiating one side of the anode film layer, which is far away from the substrate, by using a laser beam with certain power density to vaporize the material of the anode film layer so as to reduce the roughness. The wavelength of the laser may be 355 nm.
The method for improving the roughness of the anode film layer of the OLED device comprises the following steps: set up the positive pole rete on the base plate to one side of keeping away from the base plate to the positive pole rete carries out laser beam treatment, in order to reduce the roughness of positive pole rete. Namely, the OLED anode film is subjected to post-treatment by adjusting laser process parameters. Because the thickness of the film layer can be kept by laser treatment, the roughness of the film layer can be improved by laser treatment on the premise of keeping the thickness of the film layer basically unchanged, and the efficiency of an OLED device is improved.
The anode film layer can be of a single-layer structure or a multi-layer structure. The anode film layer is made of one or more of indium zinc oxide, indium tin oxide, silver, silicon carbide hybrid polymer and tungsten oxide. For example, when the anode film layer is a single-layer structure, the material of the anode film layer may be indium zinc oxide or indium tin oxide; when the anode film layer is of a multilayer structure, the anode film layer can be made of indium tin oxide, or the anode film layer can be made of different materials such as indium zinc oxide, silver, silicon carbide hybrid polymer and the like.
In some embodiments, the anodic film layer includes a plurality of first sub-film layers, and the step of laser processing the side of the anodic film layer away from the substrate includes: and performing laser processing on one side of each first sub-film layer far away from the substrate.
It can be understood that, every time a first sub-film layer is added on the substrate, the side of the first film layer away from the substrate is subjected to laser processing, so that the roughness of each layer is low, and hole diffusion is facilitated.
In some embodiments, the anodic film layer includes a plurality of second sub-film layers and a third sub-film layer, the plurality of second sub-film layers are disposed between the third sub-film layer and the substrate, wherein the step of laser processing the side of the anodic film layer away from the substrate includes: and carrying out laser processing on one side of the third sub-film layer far away from the substrate.
It can be understood that, after the second sub-film layers and the third sub-film layers are stacked on the substrate, laser processing is performed on the side, away from the substrate, of the finally stacked third sub-film layer, it can be understood that the rough surface of the third sub-film layer affects the internal electric field distribution of the OLED device, and the peak of the surface of the third sub-film layer will cause a local high electric field, which will dissociate the exciton into a positive negative carrier, resulting in a decrease in the light emission intensity; and the high electric field will accelerate the degradation of the organic material, so that the stability of the OLED device is reduced. Therefore, the side of the third sub-film layer away from the substrate is subjected to laser processing, and since the side of the third sub-film layer away from the substrate is in contact with the third sub-film layer, the side of the fourth scattering film layer away from the substrate is subjected to laser processing in this embodiment, so that the contact area between the third sub-film layer and the hole transport layer is increased.
In some embodiments, after the laser treatment is performed on the side of the anode film layer away from the substrate, the method for improving the roughness of the anode film layer of the OLED device further comprises cleaning the anode film layer to remove particles generated by the laser treatment.
Particles may be generated after laser processing, and the particles may affect the light emitting performance of the OLED device. The cleaning method is mainly classified into a chemical method and a physical method. The chemical method comprises acid-base treatment; the physical methods include plasma treatment or inert gas sputtering.
In some embodiments, as shown in table 1, taking the thickness of the anodic film layer before laser treatment as 251.2nm as an example, by adjusting the energy density of the laser, it can be found that the treatment of the anodic film layer by the laser can improve the surface roughness of the anodic film layer without damaging the anodic film layer.
TABLE 1 comparison of energy density and thickness of anodic film
| Energy Density (mJ/cm)2) | Thickness (nm) |
| 55 | 250.8 |
| 65 | 250.45 |
| 75 | 250.7 |
As can be seen from Table 1, the energy density of the laser beam was 55mJ/cm2The thickness of the anode film layer is 250.8nm, and the reduced thickness is 0.4 nm; if the energy density of the laser is 65mJ/cm2The thickness of the anode film layer is 250.45nm, and the reduced thickness is 0.75 nm; if the energy density of the laserIs 75mJ/cm2The thickness of the anode film layer was 250.7nm, and the reduced thickness was 0.5 nm. Therefore, after the surface of the anode film layer is treated by the laser, the thickness of the anode film layer is substantially unchanged.
Referring to fig. 2, fig. 2 is a graph illustrating roughness of an anode layer before and after laser processing according to an embodiment of the disclosure.
The anode film layer is a single layer film and the material of the anode film layer is indium zinc oxide. As shown in (1) of FIG. 2, the roughness of the anodic film layer before laser treatment was 12.75nm, and the energy density when used was 75mJ/cm2After the laser of (2) in fig. 2 is used to treat the anodic film layer, the roughness of the anodic film layer is 8.62nm, which is reduced by 32.4%. The height of the conical protrusions on the surface of the anode film layer is reduced, the surface becomes flat, and the roughness is obviously improved.
The anode film layer is used as an electrode, needs a specific shape, size and pattern to meet the design requirements of the OLED device, and is cut and patterned by etching. In some embodiments, the method for improving the roughness of the anode film layer of the OLED device further comprises etching the anode film layer before the laser processing the side of the anode film layer away from the substrate.
In other embodiments, after laser processing the side of the anode film layer away from the substrate, the method for improving the roughness of the anode film layer of the OLED device further includes etching the anode film layer, that is, laser processing the anode film layer that has not been etched yet. It can be understood that laser processing the anode film layer which is not etched can effectively improve the efficiency of laser processing the anode film layer.
The application also provides a laser which is applied to the method for improving the roughness of the anode film layer of the OLED device. The laser is a nanosecond Q-switched laser.
The method for improving the roughness of the anode film layer of the OLED device comprises the following steps: set up the positive pole rete on the base plate to one side of keeping away from the base plate to the positive pole rete carries out laser beam treatment, in order to reduce the roughness of positive pole rete. Namely, the OLED anode film is subjected to post-treatment by adjusting laser process parameters. Because the thickness of the film layer can be kept by laser treatment, the roughness of the film layer can be improved by laser treatment on the premise of keeping the thickness of the film layer basically unchanged, and the efficiency of an OLED device is improved.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
In the description of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features.
The method for improving the roughness of the anode film layer of the OLED device and the laser provided by the embodiment of the present application are described in detail above. The principles and implementations of the present application are described herein using specific examples, which are presented only to aid in understanding the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.
Claims (10)
1. A method for improving roughness of an anode film layer of an OLED device is characterized by comprising the following steps:
providing a substrate;
and arranging an anode film layer on the substrate, and carrying out laser treatment on one side of the anode film layer, which is far away from the substrate, so as to reduce the roughness of the anode film layer.
2. The method of claim 1, wherein the anode film layer comprises a plurality of first sub-film layers, and the laser processing the side of the anode film layer away from the substrate comprises: and performing laser processing on one side of each first sub-film layer far away from the substrate.
3. The method of claim 1, wherein the anode film layer comprises a plurality of second sub-film layers and a third sub-film layer, the plurality of second sub-film layers are disposed between the third sub-film layer and the substrate, and the laser processing the side of the anode film layer away from the substrate comprises: and carrying out laser processing on one side of the third sub-film layer far away from the substrate.
4. The method of claim 1, wherein the anode film layer comprises one or more of indium zinc oxide, indium tin oxide, silver, silicon carbide hybrid polymer, and tungsten oxide.
5. The method of claim 1, wherein after the laser processing the side of the anode film layer away from the substrate, the method further comprises cleaning the anode film layer to remove particles generated by the laser processing.
6. The method for improving the roughness of the anode film layer of the OLED device as claimed in claim 1, wherein the wavelength of the laser is 355 nm.
7. The method for improving the roughness of the anode film layer of the OLED device as claimed in claim 6, wherein the energy density of the laser is 75mJ/cm2。
8. The method of claim 1, wherein after the laser processing the side of the anode film layer away from the substrate, the method further comprises etching the anode film layer.
9. A laser applied to the method for improving the roughness of the anode film layer of the OLED device as claimed in any one of claims 1 to 8.
10. The laser of claim 9, wherein the laser is a nanosecond Q-switched laser.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5929561A (en) * | 1996-03-06 | 1999-07-27 | Pioneer Electronic Corporation | Organic electroluminescence element and method of making thereof |
| CN1472825A (en) * | 2002-08-01 | 2004-02-04 | 友达光电股份有限公司 | Method for improving anodic surface toughness of organic LED |
| JP2004140003A (en) * | 2004-02-16 | 2004-05-13 | Idemitsu Kosan Co Ltd | Microfabrication method of electroluminescent element, and element obtained from it |
| CN101822125A (en) * | 2008-06-27 | 2010-09-01 | 佳能株式会社 | Organic electroluminescence display apparatus and manufacturing method therefor |
| CN102284794A (en) * | 2011-07-27 | 2011-12-21 | 苏州德龙激光有限公司 | Device and method for performing laser etching on organic light emitting diode (OLED) display anode film material |
| CN109638176A (en) * | 2018-12-17 | 2019-04-16 | 深圳市华星光电技术有限公司 | The production method and oled substrate of oled substrate |
| CN110088914A (en) * | 2016-12-16 | 2019-08-02 | 索尼公司 | The manufacturing method of image-forming component, laminated type image-forming component, imaging device and image-forming component |
-
2021
- 2021-11-30 CN CN202111441056.7A patent/CN114141975A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5929561A (en) * | 1996-03-06 | 1999-07-27 | Pioneer Electronic Corporation | Organic electroluminescence element and method of making thereof |
| CN1472825A (en) * | 2002-08-01 | 2004-02-04 | 友达光电股份有限公司 | Method for improving anodic surface toughness of organic LED |
| JP2004140003A (en) * | 2004-02-16 | 2004-05-13 | Idemitsu Kosan Co Ltd | Microfabrication method of electroluminescent element, and element obtained from it |
| CN101822125A (en) * | 2008-06-27 | 2010-09-01 | 佳能株式会社 | Organic electroluminescence display apparatus and manufacturing method therefor |
| CN102284794A (en) * | 2011-07-27 | 2011-12-21 | 苏州德龙激光有限公司 | Device and method for performing laser etching on organic light emitting diode (OLED) display anode film material |
| CN110088914A (en) * | 2016-12-16 | 2019-08-02 | 索尼公司 | The manufacturing method of image-forming component, laminated type image-forming component, imaging device and image-forming component |
| CN109638176A (en) * | 2018-12-17 | 2019-04-16 | 深圳市华星光电技术有限公司 | The production method and oled substrate of oled substrate |
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