CN114137657B - Optical coupling structure and silicon-based chip comprising same - Google Patents
Optical coupling structure and silicon-based chip comprising same Download PDFInfo
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- CN114137657B CN114137657B CN202111531015.7A CN202111531015A CN114137657B CN 114137657 B CN114137657 B CN 114137657B CN 202111531015 A CN202111531015 A CN 202111531015A CN 114137657 B CN114137657 B CN 114137657B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12121—Laser
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The embodiment of the application provides an optical coupling structure and a silicon-based chip comprising the optical coupling structure, wherein the optical coupling structure is used for transmitting continuous light, and the optical coupling structure comprises: a substrate and an optical coupling layer over the substrate; the optical coupling layer comprises a first optical coupling region and a second optical coupling region which are connected, and the continuous light is transmitted to the second optical coupling region along the first optical coupling region; the first light coupling region is parallel to the substrate; the second optical coupling region and the substrate have an included angle of less than 90 degrees.
Description
Technical Field
The embodiment of the application relates to the technical field of optical communication, in particular to an optical coupling structure and a silicon-based chip comprising the optical coupling structure.
Background
Silicon photonics is a new generation of technology for optical device development and integration based on silicon and silicon-based substrate materials (e.g., siGe/Si, silicon-on-insulator, etc.), using existing complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) processes. The silicon photon technology combines the characteristics of ultra-large scale and ultra-high precision manufacture of integrated circuit technology and the advantages of ultra-high speed and ultra-low power consumption of photon technology, and is a subversion technology for coping with the failure of moore's law. This combination is advantageous in terms of scalability in semiconductor wafer fabrication, and thus can reduce costs.
However, the integration between the light source and the modulator still has the problem of low coupling efficiency, and thus needs to be further improved.
Disclosure of Invention
In view of this, embodiments of the present application provide an optical coupling structure and a silicon-based chip including the optical coupling structure to solve at least one technical problem existing in the prior art.
In order to achieve the above purpose, the technical scheme of the application is realized as follows:
in a first aspect, embodiments of the present application provide an optical coupling structure for transmitting continuous light, the optical coupling structure comprising: a substrate and an optical coupling layer over the substrate;
the optical coupling layer comprises a first optical coupling region and a second optical coupling region which are connected, and the continuous light is transmitted to the second optical coupling region along the first optical coupling region; the first light coupling region is parallel to the substrate; the second optical coupling region and the substrate have an included angle of less than 90 degrees.
In some embodiments of the present application, the optical coupling layer further comprises a third optical coupling region connected to the second optical coupling region, the continuous light being transmitted along the second optical coupling region to the third optical coupling region; the third light coupling region is parallel to the substrate.
In some embodiments of the present application, the material of the optical coupling layer comprises at least one of: organic polymers, silicon nitride and silicon oxynitride.
In a second aspect, embodiments of the present application provide a silicon-based chip, including: a laser, an electro-absorption modulator and an optical coupling structure as described in the above technical solutions; the optical coupling structure is positioned between the laser and the electroabsorption modulator;
the laser outputs continuous light to the optical coupling structure, the optical coupling structure couples the continuous light to the electroabsorption modulator, and the electroabsorption modulator modulates the continuous light and outputs a modulated optical signal.
In some embodiments of the present application, the laser includes a laser active region and a laser output region, an isolation structure is disposed between the laser active region and the laser output region, and the isolation structure penetrates through the laser in a direction perpendicular to the substrate; the isolation structure is used for filtering the continuous light generated by the laser active region.
In some embodiments of the present application, the light output end of the laser output region is provided with a transition region, and the transition region is connected with the first optical coupling region; the laser output continuous light is output to the first light coupling region via the transition region.
In some embodiments of the present application, the transition region is parallel to the substrate, and the cross-sectional area of the transition region in a direction perpendicular to the continuous light transmission direction decreases in the continuous light transmission direction.
In some embodiments of the present application, the electroabsorption modulator includes an electroabsorption modulation region, a first graded thickness region at an optical input end of the electroabsorption modulation region, and a second graded thickness region at an optical output end of the electroabsorption modulation region; the first thickness-graded region increases in thickness in a direction perpendicular to the substrate along the continuous light transmission direction; along the continuous light transmission direction, the second thickness-graded region has a reduced thickness along a direction perpendicular to the substrate.
In some embodiments of the present application, the electroabsorption modulator is formed on and in direct contact with a silicon layer;
the length of the silicon layer along the continuous light transmission direction is greater than the length of the electroabsorption modulator along the continuous light transmission direction.
In some embodiments of the present application, the second optical coupling region overlaps a projected portion of the silicon layer on the substrate.
In some embodiments of the present application, the material of the electroabsorption modulation region comprises at least one of: germanium, silicon germanium alloys, and group iii-v materials.
The embodiment of the application provides an optical coupling structure and a silicon-based chip comprising the optical coupling structure, wherein the optical coupling structure is used for transmitting continuous light, and the optical coupling structure comprises: a substrate and an optical coupling layer over the substrate; the optical coupling layer comprises a first optical coupling region and a second optical coupling region which are connected, and the continuous light is transmitted to the second optical coupling region along the first optical coupling region; the first light coupling region is parallel to the substrate; the second optical coupling region and the substrate have an included angle of less than 90 degrees. In the optical coupling structure provided by the embodiment of the application, the first optical coupling area and the second optical coupling area are connected, the first optical coupling area is parallel to the substrate, and the included angle between the second optical coupling area and the substrate is smaller than 90 degrees, so that larger coupling efficiency is realized; and compared with the arrangement of a single optical coupling layer, the arrangement of the connected first optical coupling region and the second optical coupling region can reduce the thickness of the first optical coupling region and the second optical coupling region in the direction perpendicular to the substrate, thereby reducing the process difficulty for preparing the optical coupling layer.
Drawings
FIG. 1 is a side cross-sectional view of an optical coupling structure provided in an embodiment of the present application;
FIG. 2 is a top view of the optical coupling structure shown in FIG. 1;
FIG. 3 is a side cross-sectional view of another optical coupling structure provided in an embodiment of the present application;
FIG. 4 is a top view of the optical coupling structure shown in FIG. 3;
FIG. 5 is a top view of a silicon-based chip according to an embodiment of the present disclosure;
FIG. 6 is a side cross-sectional view of a silicon-based chip along the A-A direction in FIG. 5 according to an embodiment of the present application;
FIG. 7 is a partial side cross-sectional view of a silicon-based chip along the A-A direction in FIG. 5 according to an embodiment of the present application;
FIG. 8 is a partial top view of another silicon-based chip provided in an embodiment of the present application;
FIG. 9 is a partial side cross-sectional view of another silicon-based chip along the direction B-B in FIG. 8, as provided in an embodiment of the present application;
FIG. 10 is a partial top view of yet another silicon-based chip provided in an embodiment of the present application;
FIG. 11 is a partial side cross-sectional view of yet another silicon-based chip provided in an embodiment of the present application along the direction C-C in FIG. 10;
the drawings include: 10-a substrate; an 11-SOI substrate; 111-an underlying substrate; 112-an oxygen-buried layer; 113-a top layer substrate; a 20-optical coupling layer; 21-a first light coupling region; 22-a second light coupling region; 23-a third light coupling region; t (T) 1 -a thickness of the first light coupling region; t (T) 2 -a thickness of the second light coupling region; t (T) 3 -a thickness of the third light coupling region; l (L) 1 -a length of the first light coupling region; l (L) 2 -a length of the second light coupling region; l (L) 3 -a length of the third light coupling region; the included angle between the gamma-second optical coupling area and the bottom substrate; 30-a layer of filler material; 40-an optical coupling structure; a 50-laser; 51-laser active region; 52-isolation structures; 53-laser output area; 54-transition zone; 55-a support structure; a 60-electroabsorption modulator; 61-electroabsorption modulation zone; 71-a first thickness gradient region; 72-a second thickness gradient region; 81-a first equal thickness region; 82-a second equivalent thickness region; t (T) 71 -a maximum thickness of the first thickness gradation region; t (T) 72 -a maximum thickness of the second thickness graded region; t (T) 81 -the thickness of the first equal thickness region; t (T) 82 -the thickness of the second equal thickness region; l (L) 71 -the length of the first thickness gradient region; l (L) 72 -the length of the second thickness gradient region; l (L) 81 -the length of the first equal thickness region; l (L) 82 -the length of the second equal thickness region; l (L) 281 -the second light coupling region and the first constant thickness region project the length of the overlap portion on a cross-section perpendicular to the substrate and parallel to the continuous light transmission direction; l'. 281 -the second light coupling region and the first constant thickness region project the length of the overlap portion on the substrate; l (L) 381 -the length of the third light coupling region and the projected overlap of the first constant thickness region; beta 1 -a first thickness-graded region and a top layer substrateIs included in the plane of the first part; beta 2 -the angle of the second graded thickness region with the top substrate.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the embodiments of the present application and the accompanying drawings, and it is apparent that the described embodiments are only some, but not all, embodiments of the present application. All other embodiments, based on the embodiments herein, which would be apparent to one of ordinary skill in the art without undue burden are within the scope of the present application.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. However, it will be apparent to one skilled in the art that the present application may be practiced without one or more of these details. In other instances, well-known features have not been described in detail so as not to obscure the application; that is, not all features of an actual implementation are described in detail herein, and well-known functions and constructions are not described in detail.
In the drawings, the size of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like numbers refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "" adjacent to "… …," "connected to" or "coupled to" another element or layer, it can be directly on, adjacent to, connected to or coupled to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on" … …, "" directly adjacent to "… …," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application. When a second element, component, region, layer or section is discussed, it does not necessarily mean that the first element, component, region, layer or section is present in the present application.
Spatially relative terms, such as "under … …," "under … …," "below," "under … …," "above … …," "above," and the like, may be used herein for ease of description to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "under" or "beneath" other elements would then be oriented "on" the other elements or features. Thus, the exemplary terms "under … …" and "under … …" may include both an upper and a lower orientation. The device may be otherwise oriented (rotated 90 degrees or other orientations) and the spatially relative descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
For a thorough understanding of the present application, detailed steps and detailed structures will be presented in the following description in order to explain the technical aspects of the present application. Preferred embodiments of the present application are described in detail below, however, the present application may have other implementations in addition to these detailed descriptions.
Referring to fig. 1 and 2, fig. 1 is a side sectional view of an optical coupling structure according to an embodiment of the present application, and fig. 2 is a top view of the optical coupling structure shown in fig. 1. As shown in fig. 1, an optical coupling structure provided in an embodiment of the present application is configured to transmit continuous light, where the optical coupling structure includes: a substrate 10 and an optical coupling layer 20 over the substrate 10;
the optical coupling layer 20 includes a first optical coupling region 21 and a second optical coupling region 22 connected, and the continuous light is transmitted along the first optical coupling region 21 to the second optical coupling region 22; the first light coupling region 21 is parallel to the substrate 10; the angle between the second light coupling region 22 and the substrate 10 is less than 90 degrees.
In the embodiments of the present application, the substrate may be a simple substance semiconductor material substrate (for example, a silicon (Si) substrate, a germanium (Ge) substrate, etc.), a compound semiconductor material substrate (for example, a silicon germanium (SiGe) substrate, etc.), or a silicon-on-insulator (SOI) substrate, a germanium-on-insulator (GeOI) substrate, etc. Here, the description will be given taking the substrate as a silicon substrate as an example. Still referring to fig. 1, the optical coupling structure includes a silicon substrate 10 with an optical coupling layer 20 disposed over the silicon substrate 10.
Here, a direction perpendicular to the substrate is defined as a Z direction. An X direction and a Y direction perpendicular to each other are defined in a top surface or a bottom surface of the substrate perpendicular to the Z direction. Here, the transmission direction of the continuous light is defined as the X direction. Here, the Y direction is parallel to the substrate and perpendicular to the X direction.
Here, the dimension of the optical coupling layer in the direction perpendicular to the substrate is defined as the thickness of the optical coupling layer, i.e., the dimension of the optical coupling layer in the Z direction is defined as the thickness of the optical coupling layer; defining the dimension of the optical coupling layer along the continuous light transmission direction as the length of the optical coupling layer, namely, the dimension of the optical coupling layer along the X direction as the length of the optical coupling layer; the dimension of the light coupling layer in a direction parallel to the substrate and perpendicular to the continuous light transmission direction is defined as the width of the light coupling layer, i.e. the dimension of the light coupling layer in the Y-direction is defined as the width of the light coupling layer.
Similarly, the first/second/third light coupling region has a dimension in the Z direction of the thickness of the first/second/third light coupling region, the first/second/third light coupling region has a dimension in the X direction of the length of the first/second/third light coupling region, and the first/second/third light coupling region has a dimension in the Y direction of the width of the first/second/third light coupling region.
As shown in fig. 1, the optical coupling layer 20 includes a first optical coupling region 21 and a second optical coupling region 22 connected, and the first optical coupling region 21 and the second optical coupling region 22 are sequentially disposed along a continuous light transmission direction, wherein the first optical coupling region 21 is parallel to the substrate 10, and the second optical coupling region 22 forms an angle γ with the substrate 10. Here, the second light coupling region 22 forms an angle γ with the substrate 10 of less than 90 degrees. More specifically, the height of the first light coupling region 21 in the direction perpendicular to the substrate 10 is constant in the continuous light transmission direction, and the height of the second light coupling region 22 in the direction perpendicular to the substrate 10 is reduced in the continuous light transmission direction. Wherein the first light coupling region 21 and the second light coupling region 22 are both formed within the filler material layer 30.
In embodiments of the present application, the second light coupling region has an angle γ with the substrate in the range of 10 ° to 60 °, i.e., 10 ° < γ <60 °.
Here, the filling material layer may be a silicon dioxide material layer for supporting and fixing the first light coupling region and the second light coupling region, and the silicon dioxide material layer has a low refractive index so that continuous light transmitted in the first light coupling region and the second light coupling region may be light-constrained.
Still referring to fig. 1, the thickness of the first light coupling region 21 in the direction perpendicular to the substrate 10 may be the same as the thickness of the second light coupling region 22 in the direction perpendicular to the substrate 10, that is, the thickness T of the first light coupling region 1 May be equal to the thickness T of the second light coupling region 2 I.e. T 1 ＝T 2 。
As shown in fig. 1, the length of the first light coupling region 21 in the direction parallel to the continuous light transmission direction may be smaller than the length of the second light coupling region 22 in the direction parallel to the continuous light transmission direction, that is, the length L of the first light coupling region 1 May be smaller than the length of the second light coupling regionDegree L 2 I.e. L 1 <L 2 . In this embodiment, the relationship between the length of the first optical coupling region and the length of the second optical coupling region is not particularly limited, and the length of the first optical coupling region may be greater than the length of the second optical coupling region, or the length of the first optical coupling region may be equal to the length of the second optical coupling region.
As shown in fig. 2, the widths of the first and second light coupling regions in the direction parallel to the substrate and perpendicular to the continuous light transmission direction are the same, that is, the widths of the first and second light coupling regions in the Y direction are the same.
The first optical coupling area and the second optical coupling area which are connected are arranged in the embodiment of the application, so that the coupling efficiency of continuous light transmission in different optical coupling areas can be ensured. Here, the provision of the first light coupling region and the second light coupling region having the same width can further ensure the coupling efficiency of the light coupling structure to the continuous light.
Still referring to fig. 1, the first light coupling region 21 and the second light coupling region 22 are connected to each other, in other words, the first light coupling region 21 and the second light coupling region 22 are in direct contact with each other. However, the second light coupling region 22 is located above the substrate 10, that is, there is no direct contact between the second light coupling region 22 and the substrate 10.
The continuous light is input from the first light coupling region and output from the second light coupling region. According to the embodiment of the application, the first optical coupling area and the second optical coupling area are connected, the first optical coupling area is parallel to the substrate, and the included angle between the second optical coupling area and the substrate is smaller than 90 degrees, so that larger coupling efficiency is achieved. In practice, the difficulty of manufacturing the large-sized optical coupling region is relatively high, and therefore, the first optical coupling region and the second optical coupling region having relatively small thickness dimensions are manufactured and are connected to each other, so that the difficulty of manufacturing the first optical coupling region and the second optical coupling region can be reduced while relatively high coupling efficiency is achieved.
Referring to fig. 3 and 4, fig. 3 is a side cross-sectional view of another optical coupling structure provided in an embodiment of the present application, and fig. 4 is a top view of the optical coupling structure shown in fig. 3. As shown in fig. 3 and 4, the optical coupling layer 20 further includes a third optical coupling region 23, where the first optical coupling region 21, the second optical coupling region 22, and the third optical coupling region 23 are sequentially disposed along the continuous light transmission direction, and the first optical coupling region 21 and the third optical coupling region 23 are parallel to the substrate 10, and an included angle between the second optical coupling region 22 and the substrate 10 is smaller than 90 degrees. More specifically, the heights of the first optical coupling region 21 and the third optical coupling region 23 in the direction perpendicular to the substrate 10 are each constant in the continuous light transmission direction, and the height of the second optical coupling region 22 in the direction perpendicular to the substrate 10 decreases in the continuous light transmission direction. Wherein the first light coupling region 21, the second light coupling region 22 and the third light coupling region 23 are all formed within the filler material layer 30. Here, the description will be given taking the substrate as a silicon substrate as an example. Still referring to fig. 3, the optical coupling structure includes a silicon substrate 10 with an optical coupling layer 20 disposed over the silicon substrate 10.
Still referring to fig. 3, the thickness of the first optical coupling region 21 in the direction perpendicular to the substrate 10 may be the same as the thickness of the second optical coupling region 22 in the direction perpendicular to the substrate 10, and the thickness of the second optical coupling region 22 in the direction perpendicular to the substrate 10 may be the same as the thickness of the third optical coupling region 23 in the direction perpendicular to the substrate 10, that is, the thickness T of the first optical coupling region 1 Thickness T of the second light coupling region 2 Thickness T of the third light coupling region 3 Identical, i.e. T 1 ＝T 2 ＝T 3 。
As shown in fig. 3, the length of the third light coupling region 23 in the direction parallel to the continuous light transmission direction may be smaller than the length of the second light coupling region 22 in the direction parallel to the continuous light transmission direction, that is, the length L of the third light coupling region 3 May be smaller than the length L of the second light coupling region 2 I.e. L 3 <L 2 . In this embodiment, the relationship between the length of the third optical coupling region and the length of the second optical coupling region is not particularly limited, and the length of the third optical coupling region may be greater than the length of the second optical coupling region, or the length of the third optical coupling region may be equal to the length of the second optical coupling region.
As shown in fig. 4, the widths of the first, second, and third light coupling regions in the direction parallel to the substrate and perpendicular to the continuous light transmission direction are the same, that is, the widths of the first, second, and third light coupling regions in the Y direction are the same.
According to the embodiment of the application, the first optical coupling area, the second optical coupling area and the third optical coupling area which are sequentially connected are arranged, so that the coupling efficiency of continuous light transmission in different optical coupling areas can be ensured. Here, the provision of the first light coupling region, the second light coupling region, and the third light coupling region having the same width can further ensure the coupling efficiency of the light coupling structure to continuous light.
Still referring to fig. 3, the first light coupling region 21 and the second light coupling region 22 are connected to each other, and the second light coupling region 22 and the third light coupling region 23 are connected to each other, in other words, the first light coupling region 21 and the second light coupling region 22 are in direct contact, and the second light coupling region 22 and the third light coupling region 23 are in direct contact. However, the third light coupling region 23 is located above the substrate 10, that is, there is no direct contact between the third light coupling region 23 and the substrate 10.
The continuous light is input from the first light coupling region, passes through the second light coupling region, and is output from the third light coupling region. According to the embodiment of the application, the first optical coupling area, the second optical coupling area and the third optical coupling area which are sequentially connected are arranged, the first optical coupling area and the third optical coupling area are parallel to the substrate, and the included angle between the second optical coupling area and the substrate is smaller than 90 degrees, so that larger coupling efficiency is achieved. In fact, the difficulty of manufacturing the large-size optical coupling region is high, so that the first optical coupling region, the second optical coupling region and the third optical coupling region with smaller thickness dimensions are manufactured, and the first optical coupling region, the second optical coupling region and the third optical coupling region are sequentially connected, so that the difficulty of manufacturing the first optical coupling region, the second optical coupling region and the third optical coupling region can be reduced while high coupling efficiency is achieved.
In an embodiment of the present application, the material of the optical coupling layer includes at least one of: organic polymers, silicon nitride and silicon oxynitride.
Here, the organic polymer may be, for example, polymethyl methacrylate (PMMA) or epoxy resin (SU 8).
Referring to fig. 5 and 6, fig. 5 is a top view of a silicon-based chip according to an embodiment of the present application, and fig. 6 is a side cross-sectional view of the silicon-based chip according to an embodiment of the present application along A-A in fig. 5. As shown in fig. 5 and 6, an embodiment of the present application further provides a silicon-based chip, including: a laser 50, an electro-absorption modulator 60, and an optical coupling structure 40 as described in the above-described embodiments; the optical coupling structure 40 is located between the laser 50 and the electroabsorption modulator 60; wherein the laser 50 outputs continuous light to the optical coupling structure 40, the optical coupling structure 40 couples the continuous light to the electroabsorption modulator 60, and the electroabsorption modulator 60 modulates the continuous light and outputs a modulated optical signal.
In embodiments of the present application, the active region of the laser may be a Fabry-Perot (F-P) or distributed feedback (Distributed Feedback, DFB) structure.
Here, the F-P laser is a multimode laser, and an optical resonator (also referred to as a "fabry-perot resonator") is formed by using a natural cleavage plane of an active region crystal, and the resonator is a parallel-end reflection type. DFB lasers are single mode lasers that produce periodic gratings longitudinally along the active region, with each slope of the grating reflecting a portion of the light back to form a resonant cavity.
In the embodiments of the present application, a DFB laser is taken as an example for explanation. Here, the above-described substrate is described as an SOI substrate. As shown in fig. 6, the SOI substrate 11 includes a base substrate 111, an buried oxide layer 112 on the base substrate 111, and a top substrate 113 on the buried oxide layer 112. Here, the bottom substrate and the top substrate are both silicon substrates, and the thickness of the top substrate is smaller than that of the bottom substrate, and the thickness of the top substrate ranges from 220nm to 340nm. The top substrate 113 and the buried oxide layer 112 are etched away, and the bottom substrate 111 is further etched to form a recess in the bottom substrate 111. And forming a P-type substrate in the groove, wherein the P-type substrate can be indium phosphide (InP), and a P-type cladding layer, a first waveguide layer, an active layer, a second waveguide layer, an N-type cladding layer and an N-type ohmic contact layer can be formed on the P-type substrate in sequence. Etching to remove the N-type ohmic contact layer and part of the N-type cladding layer in the non-preset area, so as to form a current injection area, namely a ridge-shaped table, in the preset area, and then forming a current insulation layer covering the N-type cladding layer and the side surface of the ridge-shaped table; preparing N-type ohmic contact electrodes on the upper surfaces of the current insulation layer and the ridge-shaped table; finally, the P-type substrate is thinned and polished, and then the P-type ohmic contact electrode is prepared on the P-type substrate.
In the embodiment of the application, the bottom substrate is etched to form the groove, and the P-type substrate is formed in the groove, so that the light emitting height of the laser can be reduced, and the laser is easy to integrate with other components.
Still referring to fig. 6, the laser 50 includes a laser active region 51 and a laser output region 53, an isolation structure 52 is disposed between the laser active region 51 and the laser output region 53, and the isolation structure 52 penetrates the laser 50 in a direction perpendicular to the substrate; the isolation structure 52 is used to filter the continuous light generated by the laser active region 51.
In the embodiment of the application, the laser can be etched along the direction perpendicular to the substrate to form the isolation groove, and the isolation groove is filled with isolation materials to form the isolation structure. Here, the isolating material cannot absorb the continuous light of the operating band, otherwise part of the continuous light generated by the laser, even all of the continuous light is absorbed by the isolating structure, and a sufficient continuous light output cannot be ensured.
In the embodiment of the application, the laser can emit light from one side, and the light-emitting power is generally greater than 10mW. Here, the side of the laser output region is used to output continuous light.
Still referring to fig. 6, the light output end of the laser output region 53 is provided with a transition region 54, and the transition region 54 is connected to the first optical coupling region; the laser output continuous light is output to the first light coupling region via the transition region 54; the transition region 54 is parallel to the substrate and the cross-sectional area of the transition region 54 in a direction perpendicular to the continuous light transmission direction decreases in the continuous light transmission direction.
In this embodiment, the transition region is used to transmit the continuous light output by the laser to the optical coupling structure, and more specifically, the transition region is used to transmit the continuous light output by the laser to the first optical coupling region. By providing a transition region with a cross-sectional area in a direction perpendicular to the direction of transmission of the continuous light that decreases in the direction of transmission of the continuous light, it is facilitated that the continuous light output by the laser is slowly coupled into the first light coupling region.
Still referring to fig. 6, the light output end of the laser output region 53 is further provided with a support structure 55, the support structure 55 being located above the substrate, and the support structure 55 being used to provide support for the first light coupling region. Here, the upper surface of the support structure may be in direct contact with the lower surface of the first light coupling region, or the upper surface of the support structure may not be in direct contact with the lower surface of the first light coupling region, but may be filled with a silicon oxide material between the support structure and the first light coupling region.
In an embodiment of the present application, a ratio of a height of the first optical coupling region in a direction perpendicular to the substrate to a height of the laser in a direction perpendicular to the substrate ranges from 1/2 to 3/4.
The electroabsorption modulator in the embodiment of the application comprises an electroabsorption modulation region, and the electroabsorption modulation region is used for modulating continuous light. Here, the above-described substrate is described as an SOI substrate. As shown in fig. 5 and 6, the SOI substrate 11 includes a base substrate 111, an buried oxide layer 112 on the base substrate 111, and a top substrate 113 on the buried oxide layer 112. Here, the base substrate and the top substrate may both be silicon substrates, and the thickness of the top substrate is smaller than that of the base substrate, and the thickness of the top substrate may be 220nm or 340nm, for example. The electroabsorption modulation region 61 comprises: a top substrate, which may include a P-type doped region; a first light absorbing layer and a second light absorbing layer in contact with the top substrate, each of the first light absorbing layer and the second light absorbing layer may include an N-type doped region; an optical waveguide including a first optical waveguide region located between the first light absorbing layer and the second light absorbing layer, the first optical waveguide region increasing in width along a transmission direction of the continuous light along a direction in which the first light absorbing layer is directed toward the second light absorbing layer; wherein the optical waveguide is configured to transmit the continuous light and couple the continuous light to the first light absorbing layer and the second light absorbing layer, respectively, the first light absorbing layer and the second light absorbing layer being configured to modulate the continuous light.
In this embodiment of the present application, a first metal electrode and a second metal electrode may also be respectively disposed on the N-type doped region on two opposite sides of the electroabsorption modulation region in the Y direction.
In an embodiment of the present application, the material of the electroabsorption modulation region includes at least one of the following: germanium, silicon germanium alloys, and group iii-v materials. Specifically, the materials of the first light absorbing layer and the second light absorbing layer within the electroabsorption modulation region include at least one of: germanium, silicon germanium alloys, and group iii-v materials.
Here, the first light absorbing layer and the second light absorbing layer have a feature that light absorption is electrically adjustable.
In the embodiment of the application, the continuous light output by the laser is coupled to the electroabsorption modulator through the light coupling structure, and the electroabsorption modulator continuously modulates the light and outputs the modulated light signal. That is, the silicon-based chip provided by the embodiment of the application integrates the laser and the electroabsorption modulator on the SOI substrate, so that monolithic integration can be realized, and the integration level is high and the expansibility is strong.
In the embodiment of the application, the electroabsorption modulator is based on Franz-Keldysh effect or Quantum-constrained Stark effect (QCSE) to realize modulation, and has bandwidth response larger than 100 GHz.
Referring to fig. 7, fig. 7 is a partial side cross-sectional view of a silicon-based chip along A-A in fig. 5 according to an embodiment of the present application. As shown in fig. 7, the electro-absorption modulator includes an electro-absorption modulation region 61, a first thickness gradient region 71 at the light input end of the electro-absorption modulation region 61, and a second thickness gradient region 72 at the light output end of the electro-absorption modulation region 61; along the continuous light transmission direction, the first thickness-gradation region 71 increases in thickness in a direction perpendicular to the substrate; along the continuous light transmission direction, the second thickness-gradual-change region 72 decreases in thickness in a direction perpendicular to the substrate.
In this embodiment of the present application, the first thickness gradient region, the electroabsorption modulation region, and the second thickness gradient region are sequentially disposed along the continuous light transmission direction, and the first thickness gradient region, the electroabsorption modulation region, and the second thickness gradient region are all located on the top substrate and are in direct contact with the top substrate.
Still referring to fig. 7, the first thickness-graded region has a dimension in a direction perpendicular to the substrate of the thickness of the first thickness-graded region, the second thickness-graded region has a dimension in a direction perpendicular to the substrate of the thickness of the second thickness-graded region, and the maximum thickness T of the first thickness-graded region 71 Maximum thickness T that can be matched with the second thickness-graded region 72 The same or different. FIG. 7 illustrates only T 71 And T is 72 The same is true.
Still referring to fig. 7, the first thickness-graded region has a dimension in the continuous light transmission direction of the length of the first thickness-graded region, the second thickness-graded region has a dimension in the continuous light transmission direction of the length of the second thickness-graded region, and the length of the first thickness-graded region L 71 Length L of the second thickness-graded region 72 The same or different.
Still referring to fig. 7, the first thickness gradient region includes an angle β with the top substrate 1 And an included angle beta between the second thickness-gradual-change region and the top layer substrate 2 May be the same or different. For example, the upper surface of the first graded region may have an angle of 15 ° to 60 °, i.e., 15 °, with the top substrate<β 1 <The upper surface of the second graded region may have an included angle ranging from 15 ° to 60 °, i.e., 15 °, with the top substrate of 60 °<β 2 <60°。
In the embodiment of the present application, the material of the first thickness gradient region and the second thickness gradient region may be the same as the material of the top layer substrate.
In the embodiment of the application, the first thickness gradient region and the second thickness gradient region may be formed in the same manufacturing process with the top layer substrate.
Here, the opposite two sides in the X direction of the electroabsorption modulation region are respectively provided with a first thickness gradient region and a second thickness gradient region, wherein the first thickness gradient region can play a role in transition on continuous light output by the optical coupling structure, and reflection is reduced, so that optical coupling and efficiency are improved.
Still referring to fig. 7, the electro-absorption modulator is formed on the top substrate 113 and is in direct contact with the top substrate 113; the length of the top substrate 113 in the continuous light transmission direction is greater than the length of the electro-absorption modulator in the continuous light transmission direction. In other words, after the electroabsorption modulator is formed on the top substrate, a portion of the top surface of the top substrate is still exposed. As shown in fig. 7, the top substrate 113 with the light input end of the first thickness gradation region 71 exposed is taken as a first equal thickness region 81, and the top substrate 113 with the light output end of the second thickness gradation region 72 exposed is taken as a second equal thickness region 82. Here, the first equal thickness region 81 and the second equal thickness region 82 are each part of the top layer substrate 113. Thus, the thickness T of the first equal thickness region 81 Thickness T of the second equal thickness region 82 Are the same as the thickness of the top substrate.
Still referring to fig. 7, the first equal thickness region has a dimension in the continuous light transmission direction that is the length of the first equal thickness region, the second equal thickness region has a dimension in the continuous light transmission direction that is the length of the second equal thickness region, and the length L of the first equal thickness region 81 Length L of the second equal thickness region 82 The same or different.
The following describes in detail the relative positional relationship between the second optical coupling region and the top substrate in the optical coupling layer provided in the embodiment of the present application, with reference to fig. 5 and fig. 7. Here, the SOI substrate is described as an example, and the SOI substrate includes a base substrate, an oxygen-buried layer provided over the base substrate, and a top substrate provided over the oxygen-buried layer.
In an embodiment of the present application, the second light coupling region overlaps with a projection portion of the top layer substrate on a cross section perpendicular to the substrate and parallel to the continuous light transmission direction.
It should be noted that, as shown in fig. 5 and 7, the second light coupling region 22 and the top substrate 113The projections onto the substrate do not overlap, whereas the second light coupling region 22 and the top substrate 113 partially overlap in a side cross-sectional view. Specifically, the second light coupling region and the first constant thickness region project the length L of the overlapping portion on a section perpendicular to the substrate and parallel to the continuous light transmission direction 281 That is, the projected overlapping portion of the second light coupling region and the first constant thickness region has a dimension L in the X direction 281 。
In an embodiment of the present application, a ratio between a length of an overlapping portion of the second light coupling region and the top layer substrate projected on a cross section perpendicular to the substrate and parallel to a continuous light transmission direction and a length of the second light coupling region ranges from 1/3 to 3/4. As an example, 1/3 of<L 281 /L 2 <3/4。
Here, by setting the ratio of the second light coupling region to the top substrate projecting the overlapping portion on a cross section perpendicular to the substrate and parallel to the continuous light transmission direction, a larger coupling efficiency can be achieved.
As shown in fig. 5, the width of the second light coupling region in the direction parallel to the substrate and perpendicular to the continuous light transmission direction is the same as the width of the top substrate, that is, the widths of the first light coupling region, the second light coupling region, and the top substrate in the Y direction are all the same.
The following describes in detail the relative positional relationship between the second optical coupling region and the top substrate in another optical coupling layer according to the embodiment of the present application, with reference to fig. 8 and 9. Here, the SOI substrate is described as an example, and the SOI substrate includes a base substrate, an oxygen-buried layer provided over the base substrate, and a top substrate provided over the oxygen-buried layer.
In an embodiment of the present application, the second optical coupling region overlaps with a projection portion of the silicon layer on the substrate. Here, the silicon layer may refer to a top layer substrate within the SOI substrate as previously described.
Referring to fig. 8 and 9, fig. 8 is a partial top view of another silicon-based chip according to an embodiment of the present application, and fig. 9 is a partial side surface of another silicon-based chip according to an embodiment of the present application along the direction B-B in fig. 8A cross-sectional view. It should be noted that, fig. 8 and 9 show that the second light coupling region 22 is located above the top substrate 113, and the second light coupling region 22 overlaps with the projection portion of the top substrate 113 on the substrate. Specifically, the second light coupling region 22 overlaps with the projected portion of the first constant thickness region 81 on the underlying substrate 111, and the second light coupling region and the projected portion of the first constant thickness region on the substrate have a length L' 281 That is, the projected overlapping portion of the second light coupling region and the first equal thickness region on the underlying substrate has a dimension L 'in the X direction' 281 。
In an embodiment of the present application, a ratio between a length of an overlapping portion of the second light coupling region and the projection of the top layer substrate on the substrate and a length of the second light coupling region ranges from 1/3 to 3/4. As an example, 1/3 of <L’ 281 /L 2 <3/4。
Here, by setting the ratio of the second light coupling region to the projected overlapping portion of the top substrate on the substrate, a larger coupling efficiency can be achieved.
The following describes in detail the relative positional relationship between the third optical coupling region and the top substrate in the optical coupling layer according to the embodiment of the present application, with reference to fig. 10 and 11. Here, the SOI substrate is described as an example, and the SOI substrate includes a base substrate, an oxygen-buried layer provided over the base substrate, and a top substrate provided over the oxygen-buried layer.
In an embodiment of the present application, the third light coupling area overlaps with a projection portion of the top layer substrate on the substrate.
Referring to fig. 10 and 11, fig. 10 is a partial top view of yet another silicon-based chip provided in an embodiment of the present application, and fig. 11 is a partial side sectional view of yet another silicon-based chip provided in an embodiment of the present application along the direction C-C in fig. 10. Note that, the third light coupling region 23 shown in fig. 10 and 11 is located above the top substrate 113, and the third light coupling region 23 overlaps with a projection portion of the top substrate 113 on the substrate. Specifically, the third light coupling region 23 overlaps with the projected portion of the first constant thickness region 81 on the underlying substrate 10, and the third Length L of projected overlap of light coupling region and first equal thickness region 381 That is, the projected overlapping portion of the third light coupling region and the first equal thickness region on the underlying substrate has a dimension L in the X direction 381 。
In an embodiment of the present application, the third light coupling region may be located entirely on the top substrate, i.e. the length of the overlapping portion of the third light coupling region and the projection of the top substrate on the substrate is equal to the length of the third light coupling region. Of course, the third light coupling region may be located partly on the top substrate, the ratio between the length of the overlapping portion of the third light coupling region and the projection of the top substrate onto the substrate and the length of the third light coupling region being in the range of 1/3 to 3/4. As an example, 1/3 of<L 381 /L 3 <3/4. Here, by setting the ratio of the third light coupling region to the projected overlapping portion of the top substrate on the substrate, a larger coupling efficiency can be achieved.
The method for manufacturing the silicon-based chip provided in the embodiment of the present application will be described in detail.
First, a substrate is provided. The substrate will be described here as an SOI substrate. The substrate comprises a bottom substrate, an oxygen-buried layer arranged on the bottom substrate and a top substrate arranged on the oxygen-buried layer.
Then, etching to remove part of the top substrate and part of the buried oxide layer to expose part of the bottom substrate, and further wet etching the bottom substrate to form a groove; and selectively growing a high-quality III-V material layer in the groove by utilizing processes such as molecular beam epitaxial growth and the like for multiple times, wherein the high-quality III-V material layer comprises a quantum well and a quantum dot structure, and doping and etching are performed to form an active region, an isolation structure and a laser output region of the laser.
Next, a transition region of the laser is formed.
And forming a first light coupling region and a second light coupling region above the exposed part of the bottom substrate, wherein the first light coupling region and the second light coupling region form a light coupling structure. Here, the first, second and third optical coupling regions may also be formed over the underlying substrate, the first, second and third optical coupling regions together constituting an optical coupling structure.
Next, P-type doping is carried out on the top substrate, for example, a 220 (340) nm thin silicon layer, and an electroabsorption material layer is prepared, and then an active region of the electroabsorption modulator is formed through exposure and etching; depositing material layers with gradually changed thickness on two sides of an active area of the electro-absorption modulator to form a first gradually changed thickness area and a second gradually changed thickness area; n-type doping is performed on top of the active region of the laser and the active region of the electroabsorption modulator.
Next, a filling material layer is formed, for example, a silicon dioxide material is deposited, and a planarization process is performed on an upper surface of the filling material layer.
Finally, the metal electrodes required by the active area of the laser and the active area of the electroabsorption modulator are manufactured by utilizing the processes of photoetching, inductively coupled plasma etching, windowing, magnetron sputtering, depositing metal materials and the like.
As described above, the preparation process of the silicon-based chip provided in the embodiment of the present application is completed. The technical features of the embodiments described in the present invention may be combined arbitrarily without any conflict.
The embodiment of the application provides an optical coupling structure and a silicon-based chip comprising the optical coupling structure, wherein the optical coupling structure is used for transmitting continuous light, and the optical coupling structure comprises: a substrate and an optical coupling layer over the substrate; the optical coupling layer comprises a first optical coupling region and a second optical coupling region which are connected, and the continuous light is transmitted to the second optical coupling region along the first optical coupling region; the first light coupling region is parallel to the substrate; the second optical coupling region and the substrate have an included angle of less than 90 degrees. In the optical coupling structure provided by the embodiment of the application, the first optical coupling area and the second optical coupling area are connected, the first optical coupling area is parallel to the substrate, and the included angle between the second optical coupling area and the substrate is smaller than 90 degrees, so that larger coupling efficiency is realized; and compared with the arrangement of a single optical coupling layer, the arrangement of the connected first optical coupling region and the second optical coupling region can reduce the thickness of the first optical coupling region and the second optical coupling region in the direction perpendicular to the substrate, thereby reducing the process difficulty for preparing the optical coupling layer.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in various embodiments of the present application, the sequence numbers of the foregoing processes do not mean the order of execution, and the order of execution of the processes should be determined by the functions and internal logic thereof, and should not constitute any limitation on the implementation process of the embodiments of the present application. The foregoing embodiment numbers of the present application are merely for describing, and do not represent advantages or disadvantages of the embodiments.
The foregoing description is only of the preferred embodiments of the present application, and is not intended to limit the scope of the claims, and all equivalent structural changes made by the specification and drawings of the present application or direct/indirect application in other related technical fields are included in the scope of the claims of the present application.
Claims (9)
1. A silicon-based chip, the silicon-based chip comprising: a laser, an electroabsorption modulator, and an optical coupling structure; the optical coupling structure is positioned between the laser and the electroabsorption modulator; the laser outputs continuous light to the optical coupling structure, the optical coupling structure couples the continuous light to the electroabsorption modulator, and the electroabsorption modulator modulates the continuous light and outputs a modulated optical signal;
the optical coupling structure is used for transmitting continuous light, and the optical coupling structure comprises: a substrate and an optical coupling layer over the substrate; the optical coupling layer comprises a first optical coupling region and a second optical coupling region which are connected, and the continuous light is transmitted to the second optical coupling region along the first optical coupling region; the first light coupling region is parallel to the substrate; an included angle between the second optical coupling region and the substrate is less than 90 degrees;
the electroabsorption modulator comprises an electroabsorption modulation region, a first thickness gradual change region positioned at the light input end of the electroabsorption modulation region and a second thickness gradual change region positioned at the light output end of the electroabsorption modulation region; the first thickness-graded region increases in thickness in a direction perpendicular to the substrate along the continuous light transmission direction; along the continuous light transmission direction, the second thickness-graded region has a reduced thickness along a direction perpendicular to the substrate.
2. The silicon-based chip of claim 1, wherein the optical coupling layer further comprises a third optical coupling region connected to the second optical coupling region, the continuous light being transmitted along the second optical coupling region to the third optical coupling region; the third light coupling region is parallel to the substrate.
3. The silicon-based chip of claim 1, wherein the material of the optical coupling layer comprises at least one of: organic polymers, silicon nitride and silicon oxynitride.
4. The silicon-based chip of claim 1, wherein the laser comprises a laser active region and a laser output region, an isolation structure is disposed between the laser active region and the laser output region, and the isolation structure penetrates the laser in a direction perpendicular to the substrate; the isolation structure is used for filtering the continuous light generated by the laser active region.
5. A silicon-based chip as defined in claim 4 wherein the light output end of the laser output region is provided with a transition region, and wherein the transition region is connected to the first optical coupling region; the laser output continuous light is output to the first light coupling region via the transition region.
6. The silicon-based chip of claim 5, wherein the transition region is parallel to the substrate and the cross-sectional area of the transition region decreases in the direction of continuous light transmission along a direction perpendicular to the direction of continuous light transmission.
7. The silicon-based chip of claim 1, wherein the electroabsorption modulator is formed on and in direct contact with a silicon layer;
the length of the silicon layer along the continuous light transmission direction is greater than the length of the electroabsorption modulator along the continuous light transmission direction.
8. The silicon-based chip of claim 7, wherein the second optical coupling region overlaps a projected portion of the silicon layer on the substrate.
9. The silicon-based chip of claim 1, wherein the material of the electroabsorption modulation region comprises at least one of: germanium, silicon germanium alloys, and group iii-v materials.
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| CN107003478A (en) * | 2015-05-05 | 2017-08-01 | 华为技术有限公司 | Optically coupled device |
| CN209044108U (en) * | 2018-09-27 | 2019-06-28 | 上海新微科技服务有限公司 | Laser and silicon optical chip integrated morphology |
| CN110954998A (en) * | 2018-09-27 | 2020-04-03 | 上海新微技术研发中心有限公司 | Laser and silicon optical chip integrated structure and preparation method thereof |
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| CN209044108U (en) * | 2018-09-27 | 2019-06-28 | 上海新微科技服务有限公司 | Laser and silicon optical chip integrated morphology |
| CN110954998A (en) * | 2018-09-27 | 2020-04-03 | 上海新微技术研发中心有限公司 | Laser and silicon optical chip integrated structure and preparation method thereof |
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