CN114086144A - Magnetron sputtering device for physical vapor deposition - Google Patents
Magnetron sputtering device for physical vapor deposition Download PDFInfo
- Publication number
- CN114086144A CN114086144A CN202111499885.0A CN202111499885A CN114086144A CN 114086144 A CN114086144 A CN 114086144A CN 202111499885 A CN202111499885 A CN 202111499885A CN 114086144 A CN114086144 A CN 114086144A
- Authority
- CN
- China
- Prior art keywords
- magnetron sputtering
- shaped permanent
- permanent magnet
- sputtering device
- bar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 98
- 238000005240 physical vapour deposition Methods 0.000 title claims description 32
- 230000007246 mechanism Effects 0.000 claims abstract description 29
- 238000007885 magnetic separation Methods 0.000 claims 1
- 239000013077 target material Substances 0.000 abstract description 21
- 238000004544 sputter deposition Methods 0.000 abstract description 17
- 239000000758 substrate Substances 0.000 abstract description 16
- 230000006698 induction Effects 0.000 abstract description 15
- 210000002381 plasma Anatomy 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009826 distribution Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- -1 at this time Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005389 magnetism Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
According to the invention, the strip-shaped permanent magnets with even number are radially staggered and uniformly arranged on the base of the magnetron sputtering device, so that magnetic lines of force at two ends of two adjacent strip-shaped permanent magnets are closed, electrons in a cavity are bound, more plasmas are formed, and the sputtering efficiency is increased; the magnet adjusting mechanism is arranged to adjust the position of the strip-shaped permanent magnet in the radial direction, so that the magnetic induction intensity distribution on the target material is more uniform, the target material is uniformly sputtered, and the utilization rate of the target material is improved; the annular permanent magnet with the S pole at the upper part and the N pole at the lower part is arranged at the edge of the magnetron sputtering device, so that the magnetic induction intensity at the edge of the device is enhanced, electrons at the edge of the target material are effectively bound, the sputtering speed at the edge of the target material is the same as that at the middle part, the utilization rate of the target material is improved, and the uniformity of a film on a substrate is improved. The utilization rate of the target is improved to about 60 percent from the original 30 percent, and the production cost is reduced; the uniformity of the substrate film is improved from about 3% to about 0.8%, the stability of the product is improved, and the yield is increased.
Description
Technical Field
The invention relates to the field of physical vapor deposition, in particular to a magnetron sputtering device.
Background
The Physical Vapor Deposition (PVD) technique is a technique of vaporizing a material source, i.e., a solid or liquid surface, into gaseous atoms, molecules or partially ionized ions by a Physical method under a vacuum condition, and depositing a thin film having a specific function on a substrate surface by a low-pressure gas (or plasma) process. The main methods of physical vapor deposition include vacuum evaporation, sputter coating, arc plasma coating, ion coating, and molecular beam epitaxy.
The basic principle of sputter coating is to make argon gas undergo glow discharge under the vacuum condition of argon (Ar) gas, at this time, argon (Ar) atoms are ionized into argon ions (Ar +), the argon ions are accelerated to bombard under the action of electric field force to form cathode target material made of coating material, and the target material is sputtered out and deposited on the surface of a workpiece. If DC glow discharge is used, it is referred to as DC (Qc) sputtering, and Radio Frequency (RF) glow discharge-induced sputtering is referred to as RF sputtering. Magnetron (M) glow discharge induced magnetron sputtering. The invention relates to a magnetron sputtering technology.
A magnetron sputtering apparatus forms a magnetic field on a surface of a sputtering target and efficiently turns sputtering gas into plasma by moving electrons in the magnetic field. In comparison with other methods, magnetron sputtering is widely used for forming a thin film because of its capability of improving the coating efficiency and coating uniformity.
The existing magnetron sputtering device has two defects:
1. the utilization rate of the target is low and is about 30 percent.
2. The uniformity of the film deposited on the surface of the substrate is low, and the uniformity is about 3%. The film is thin at the edge and thick in the middle of the surface of the substrate.
Disclosure of Invention
The invention solves two technical problems:
1, the magnetic induction intensity is unevenly distributed on the target material, the target material is unevenly sputtered, and the utilization rate of the target material is low.
2, the uniformity of the film deposited on the surface of the substrate is poor.
The embodiment of the invention provides a magnetron sputtering device for physical vapor deposition, which comprises: a magnetron sputtering device base 7, a strip permanent magnet 8 and a magnet position adjusting mechanism 9;
the bar-shaped permanent magnets 8 are uniformly distributed in the magnetron sputtering device base 7 along the radial direction, the positions of the bar-shaped permanent magnets 8 in the radial direction are the same, the bar-shaped permanent magnets are arranged in an even number of more than six, the N poles and the S poles of two adjacent bar-shaped permanent magnets 8 are staggered, when the N pole of the first bar-shaped permanent magnet 8 points to the circle center of the magnetron sputtering device base 7 and the S pole points to the circumference of the magnetron sputtering device base 7, the N pole of the second adjacent magnet points to the circumference of the magnetron sputtering device base 7, and the S pole points to the circle center of the magnetron sputtering device base 7;
the magnet position adjusting mechanism 9 is fixed on the magnetron sputtering device base 7, positioned above the bar-shaped permanent magnet 8, connected with the bar-shaped permanent magnet 8, and used for driving the bar-shaped permanent magnet 8 to move along the radial direction of the magnetron sputtering device; above each of the bar permanent magnets 8 is one of the magnet position adjusting mechanisms 9.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, wherein the magnet position adjusting mechanism 9 of the apparatus comprises:
a stepping motor 14; a screw rod 12 connected to the stepping motor 14; a slider 13 mounted on the screw rod 12;
the stepping motor 14 and the screw rod 12 are fixed on the magnetron sputtering device base 7;
the slide block 13 is connected with the strip permanent magnet 8, and a magnetism isolating sheet 15 is arranged between the slide block 13 and the strip permanent magnet 8;
when the stepping motor 14 rotates, the slider 13 slides along the lead screw 12, and drives the bar-shaped permanent magnet 8 connected with the slider 13 to adjust the position along the lead screw 12, i.e. along the radial direction of the magnetron sputtering device base 7.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, wherein the magnet position adjusting mechanism 9 of the apparatus further comprises:
and a position sensor for detecting the position of the bar permanent magnet 8.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, wherein the moving speed of the magnet position adjusting mechanism 9 of the apparatus is: 6-10 mm/s.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, in which the positions of the bar-shaped permanent magnets 8 within the same set of closed magnetic lines of force in the radial direction of the magnetron sputtering apparatus base 7 are kept consistent, that is, the centers of the bar-shaped permanent magnets 8 within the same set of closed magnetic lines of force are always on the same circumferential line.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, the apparatus further comprising:
and the rotating motor 10 is fixed on the magnetron sputtering device base 7 and is used for driving the magnetron sputtering device to rotate integrally.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, wherein the rotating speed of a rotating motor 10 of the apparatus is: 60-90 turns/min.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, the apparatus further comprising:
and the annular permanent magnet 11 is fixed on the edge of the base 7 of the magnetron sputtering device and surrounds the magnetron sputtering device, and the S pole of the annular permanent magnet 11 faces upwards and the N pole of the annular permanent magnet faces downwards.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, wherein the magnetic field strength of the strip permanent magnet 8 of the apparatus is: 500-600 gauss.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, the number of the strip permanent magnets 8 of the apparatus is: 6 or 8 or 10.
In conclusion, the beneficial effects of the invention are as follows:
according to the invention, the strip-shaped permanent magnets 8 with even number are radially staggered and uniformly arranged on the base 7 of the magnetron sputtering device, so that magnetic lines of force at two ends of two adjacent strip-shaped permanent magnets 8 are closed, electrons in a cavity are bound, more plasmas are formed, and the sputtering efficiency is increased; the magnet adjusting mechanism is arranged to adjust the position of the bar-shaped permanent magnet 8 in the radial direction, so that the magnetic induction intensity distribution on the target material is more uniform, the target material is uniformly sputtered, and the utilization rate of the target material is improved; the annular permanent magnet 11 with the S pole at the upper part and the N pole at the lower part is arranged at the edge of the magnetron sputtering device, so that the magnetic induction intensity at the edge of the device is enhanced, electrons at the edge of the target material are effectively bound, the sputtering speed at the edge of the target material is the same as that at the middle part, the utilization rate of the target material is improved, and the uniformity of a film on a substrate is improved. After the achievement of the invention is applied, the utilization rate of the target material is improved to about 60 percent from the original 30 percent, and the production cost is reduced; the uniformity of the substrate film is improved from about 3% to about 0.8%, the stability of the product is improved, and the yield is increased. The utilization rate of the target material and the uniformity of the substrate film are greatly improved, and the quantity is changed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a schematic view of a physical vapor deposition apparatus chamber;
FIG. 2 is a schematic structural diagram of a magnetron sputtering apparatus for physical vapor deposition according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a magnet position adjusting mechanism 9 of a magnetron sputtering apparatus for physical vapor deposition according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a conventional magnetron sputtering apparatus;
FIG. 5 is a schematic diagram of the consumption of a target material after use in a conventional magnetron sputtering apparatus;
FIG. 6 is a schematic diagram illustrating the consumption of the target after use of the magnetron sputtering apparatus for physical vapor deposition according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It should be understood by those skilled in the art that the embodiments described are a part of the embodiments of the present invention, and not all embodiments. Based on the embodiments in this application, a person skilled in the art can make any suitable modification or variation to obtain all other embodiments.
The embodiment of the invention provides a magnetron sputtering device for physical vapor deposition, which comprises: a magnetron sputtering device base 7, a strip permanent magnet 8 and a magnet position adjusting mechanism 9;
the bar-shaped permanent magnets 8 are uniformly distributed in the magnetron sputtering device base 7 along the radial direction, the positions of the bar-shaped permanent magnets 8 in the radial direction are the same, the bar-shaped permanent magnets are arranged in an even number of more than six, the N poles and the S poles of two adjacent bar-shaped permanent magnets 8 are staggered, when the N pole of the first bar-shaped permanent magnet 8 points to the circle center of the magnetron sputtering device base 7 and the S pole points to the circumference of the magnetron sputtering device base 7, the N pole of the second adjacent magnet points to the circumference of the magnetron sputtering device base 7, and the S pole points to the circle center of the magnetron sputtering device base 7;
the magnet position adjusting mechanism 9 is fixed on the magnetron sputtering device base 7, positioned above the bar-shaped permanent magnet 8, connected with the bar-shaped permanent magnet 8, and used for driving the bar-shaped permanent magnet 8 to move along the radial direction of the magnetron sputtering device; above each of the bar permanent magnets 8 is one of the magnet position adjusting mechanisms 9.
In this embodiment, as shown in the schematic diagram of the physical vapor deposition apparatus cavity in fig. 1, the object vapor deposition apparatus cavity is composed of a cavity housing 1, a cavity base 2, a target 3, and a magnetron sputtering device 4. The magnetron sputtering device 4 is connected to a target base 16 by a taper pin 5. A gap is arranged between a magnet and a target 3 in the magnetron sputtering device, and the gap is about 1-3 mm. The substrate 6 on which the thin film is to be deposited is placed on the susceptor.
As shown in fig. 2, the magnetron sputtering device includes a magnetron sputtering device base 7, a plurality of bar-shaped permanent magnets 8 with even number and uniformly distributed in the magnetron sputtering device base 7, and a magnet position adjusting mechanism 9. The number of the strip permanent magnets 8 can be increased or decreased according to actual requirements, and the strip permanent magnets are arranged in even numbers. The N poles and the S poles of two adjacent strip-shaped permanent magnets 8 are staggered. For example, the N pole of the first bar permanent magnet 8 faces the inside of the device and points to the center of the circle, the S pole faces the outside of the device and points to the circumference, the N pole of the adjacent bar permanent magnet 8 faces the outside of the device and points to the circumference, the S pole faces the inside of the device and points to the center of the circle, and so on, and they are placed in a staggered manner. The strip-shaped permanent magnets 8 are uniformly arranged, so that the uniformity of a magnetic field in the device can be improved. The staggered arrangement is convenient for the closing of magnetic lines of force at two ends of two adjacent magnets, is beneficial to binding electrons in the cavity, forms more plasmas and increases the sputtering efficiency. However, since the magnetic induction intensity of the two poles of the strip permanent magnet 8 is strong, and the magnetic induction intensity in the middle is weak, although the uniformity of the magnetic induction intensity is improved as a whole, the distribution of the magnetic induction intensity on a local area is still uneven, and the target 3 is also reflected on the target 3, so that the target 3 can be sputtered unevenly, two circles of V-shaped grooves can be formed on the used target 3, and the groove areas correspond to the positions of the two poles of the magnet. Therefore, a magnet position adjusting mechanism 9 is provided above each of the bar permanent magnets 8. The magnet position adjusting mechanism 9 can be realized in various ways, such as a stepping motor 14 driving a screw rod 12 and a slide block 13, a synchronous toothed belt transmission and the like, and can drive a strip-shaped permanent magnet 8 to do linear motion through the existing mechanical structure. This magnet position control mechanism 9 drives this bar permanent magnet 8 along this magnetron sputtering device's radial motion, adjusts this bar permanent magnet 8's position, and the two poles of the earth of this bar permanent magnet 8 and middle zone are all no longer fixed same region corresponding to target 3 for each regional magnetic induction intensity distributes evenly from the time dimension on the target 3, and target 3 is by even sputtering, improves the rate of utilization of target 3.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, wherein the magnet position adjusting mechanism 9 of the apparatus comprises:
a stepping motor 14; a screw rod 12 connected to the stepping motor 14; a slider 13 mounted on the screw rod 12;
the stepping motor 14 and the screw rod 12 are fixed on the magnetron sputtering device base 7;
the slide block 13 is connected with the strip permanent magnet 8, and a magnetism isolating sheet 15 is arranged between the slide block 13 and the strip permanent magnet 8;
when the stepping motor 14 rotates, the slider 13 slides along the lead screw 12, and drives the bar-shaped permanent magnet 8 connected with the slider 13 to adjust the position along the lead screw 12, i.e. along the radial direction of the magnetron sputtering device base 7.
In this embodiment, as shown in fig. 3, the magnet position adjusting mechanism 9 drives the screw rod 12 to rotate through the stepping motor 14, so that the slider 13 moves along the direction of the screw rod 12, that is, moves along the radial direction of the magnetron sputtering apparatus base 7, and adjusts the position of the bar permanent magnet 8, so that two poles and a middle region of the bar permanent magnet 8 are not fixed in the same region corresponding to the target 3, the target 3 is uniformly sputtered, and the utilization rate of the target 3 is improved. The antimagnetic sheet 15 is added because the magnetic field intensity of the bar permanent magnet 8 is about 550 gauss, and if the bar permanent magnet 8 is directly connected with the slider 13, the bar permanent magnet 8 gives a suction force to the slider 13 and the following connecting parts, which is inconvenient for the slider 13 to move.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, wherein the magnet position adjusting mechanism 9 of the apparatus further comprises:
and a position sensor for detecting the position of the permanent magnet 7.
In this embodiment, the magnet position adjustment mechanism 9 further includes a position sensor. The position sensor is used for detecting the position of the bar permanent magnet 8, and may be a proximity sensor, a distance meter, or the like, and may be configured to determine the position of the bar permanent magnet 8 at a specific time by detecting that the bar permanent magnet 8 reaches the specific position, or determine the position of the bar permanent magnet at the measurement time by measuring the distance from the bar permanent magnet 8 to the installation position of the sensor. By detecting the position of the bar permanent magnet 8, a better control of the positional shift of the bar permanent magnet 8 can be facilitated, so that the distribution of the magnetic induction on the target 3 is more uniform in the time dimension.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, wherein the moving speed of the magnet position adjusting mechanism 9 of the apparatus is: 6-10 mm/s.
In this embodiment, the moving speed of the magnet position adjusting mechanism 9 is preferably: 6-10 mm/s. If the speed is too high, the magnetic field may change too sharply and become unstable, which may affect the use of the target 3 and the uniformity of film formation of the product.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, in which the positions of the bar-shaped permanent magnets 8 within the same set of closed magnetic lines of force in the radial direction of the magnetron sputtering apparatus base 7 are kept consistent, that is, the centers of the bar-shaped permanent magnets 8 within the same set of closed magnetic lines of force are always on the same circumferential line.
In this embodiment, when the position of the bar permanent magnet 8 is adjusted, each of the stepping motors 14 rotates simultaneously, in the same direction and at the same speed, and also stops synchronously, so that the motion state of the slider 13 on the lead screw 12 is kept the same, and the center of each of the bar permanent magnets 8 is ensured to be on the same circumferential line, thereby ensuring the uniformity of the magnetic induction intensity on the whole.
For example, three proximity sensors are provided outside the guide rail of the screw 12, and detect the left limit position, the right limit position, and the zero point position of the slider 13. Since the slide 13 is connected to the permanent bar magnet 8, the position of the slide 13 is the position of the permanent bar magnet 8. The middle position of the adjustable range of the strip permanent magnet 8 is taken as a zero position, and the extreme positions at the two ends of the adjustable range are respectively taken as a left extreme position and a right extreme position. For example, the adjustable range is 60mm, the right limit position is 30mm of positive direction close to the center of the circle, and the left limit position is 30mm of negative direction close to the circumference. The magnet position adjusting mechanism 9 moves to the zero position to perform position calibration and then moves to the target position each time the position of the bar permanent magnet 8 is adjusted. Through software control, the bar-shaped permanent magnets 8 can be simultaneously adjusted to the inside of the device or the outside of the device at the same speed, and the centers of the bar-shaped permanent magnets are always on the same circumference.
| Number of times of |
1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
| Consumption of target material (KWH) | 0～100 | 100～200 | 200～300 | 300～400 | 400～500 | 500～600 | 600～700 | 700～800 | 800～900 |
| Magnet position (mm) | 0 | -7.5 | -15 | -22.5 | -30 | 7.5 | 15 | 22.5 | 30 |
As one specific example shown in the above table, the strip permanent magnet 8 is subjected to position adjustment 8 times throughout the period of use of the target 3. The position of the bar permanent magnet 8 is adjusted every time the target 3 consumes about 100 KWH. The target 3 consumption is usually expressed in kilowatt-hours (KWH). During production, the software can automatically record the consumption of the target 3. When the consumption of the target 3 is 0-100 kwh, the magnet position is at the initial position with the coordinate of 0, namely the position 1; when the consumption of the target 3 is 100-200 KWH, the position of the target 3 is adjusted to a position with a coordinate of-7.5 mm, namely a position of 2 … …, and the like. After adjusting the position each time, determining whether the new position is optimal by the following two methods:
1) and sputtering the substrate, measuring the uniformity of the film deposition on the substrate, fine-tuning the position of the magnet if the uniformity is not good, and performing the sputtering test again on the substrate until the uniformity of the film on the substrate is good.
2) And opening the cavity, checking whether the surface of the target 3 is uniformly sputtered, and finely adjusting the position of the magnet if the sputtering is not uniform.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, the apparatus further comprising:
and the rotating motor 10 is fixed on the magnetron sputtering device base 7 and is used for driving the magnetron sputtering device to rotate integrally.
In this embodiment, a rotating motor 10 is disposed at the top end of the magnetron sputtering apparatus, and the rotating motor 10 drives the magnetron sputtering apparatus to rotate integrally to generate a rotating magnetic field. The rotating magnetic field can ensure that the magnetic induction intensity is uniformly distributed in the whole magnetron sputtering device within a certain time period, namely, the magnetic induction intensity is uniformly distributed on the target 3, so that the target 3 is uniformly sputtered, the utilization rate of the target 3 is improved, and the uniformity of film forming can also be improved.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, wherein the rotating speed of a rotating motor 10 of the apparatus is: 60-90 turns/min.
In the present embodiment, the rotation speed of the rotating electrical machine 10 is preferably: 60-90 turns/min. If the speed is too slow, the improvement effect on the uniformity of the magnetic field is limited. If the speed is too high, the variation of the rotating magnetic field is too severe, and the sputtering and film formation uniformity of the target 3 is adversely affected.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, the apparatus further comprising:
and the annular permanent magnet 11 is fixed on the edge of the base 7 of the magnetron sputtering device and surrounds the magnetron sputtering device, and the S pole of the annular permanent magnet 11 faces upwards and the N pole of the annular permanent magnet faces downwards.
In this embodiment, a ring permanent magnet 11 is disposed at the edge of the magnetron sputtering apparatus, and the upper side of the ring permanent magnet 11 is an S pole and the lower side thereof is an N pole. The magnetic field generated by the annular permanent magnet 11 can effectively bind electrons at the edge of the target 3, so that the concentration of ionized ions at the edge of the target 3 is the same as that of ionized ions in the middle, the sputtering speed at the edge of the target 3 is the same as that of the ionized ions in the middle, the utilization rate of the target 3 is improved, and the uniformity of a film on a substrate is improved.
Fig. 4 is a schematic structural diagram of a conventional magnetron sputtering apparatus. As can be seen from the figure, the bar magnet of the prior art device is mounted in a fixed position with the ring magnet located in the center of the device. Compared with the magnetron sputtering device provided by the invention, the designs are not favorable for the sputtering of the target 3 and the uniformity of product film formation. Fig. 5 shows the consumption of the target 3 after use in the conventional magnetron sputtering apparatus. The target 3 is located on a target base 16. Suppose that the initial thickness H of the new target 3 is 10mm, the radius R of the target 3 is 150mm, and the volume V of the target 3 is pi R2 H＝3.14×1502×10＝706500mm3. Because the magnetic induction intensity of the original device is not uniformly distributed on the surface of the target 3, two circles of grooves, namely an inner circle groove and an outer circle groove, are formed on the target 3 as shown in the figure. After the target 3 is used, the thickness of the target 3 in the rest areas except the groove area is about 8 mm. The depth and the width of the grooves of the inner ring and the outer ring are similar, the depth is about 6mm, and the width is about 20 mm. To ensure safe production, 2mm remains at the bottom of the target 3 to ensure that the target 3 is not completely broken down. The calculation process of the utilization rate of the target 3 of the original device is as follows:
volume of the outer ring groove: v1＝3.14×120×120×6-3.14×100×100×6＝82896mm3
Volume of the inner ring groove: v2＝3.14×40×40×6-3.14×20×20×6＝22608mm3
Residual volume of the target 3: v3＝V×0.8-V1-V2＝702000×0.8-82896-22608＝459696mm3
Utilization rate of the target 3: u% ((V-V))3)/V×100％＝34.93％
The utilization rate of the target 3 of the original device is about: 35 percent.
After the achievement of the invention is comprehensively applied, the target 3 is uniformly sputtered through the comprehensive action of the control of the position of the magnet, the rotating magnetic field, the annular magnetic field and the like. Fig. 6 is a schematic view showing consumption of the target 3 after use in combination with the results of the present invention. The target 3 is located on a target base 16. As a comparison with the conventional apparatus, similarly, it is assumed that the initial thickness H of the new target 3 is 10mm and the radius R of the target 3 is 150 mm. To ensure safe production, 2mm remains at the bottom of the target 3 after use to ensure that the target 3 is not completely broken down. Compared with the prior device, the thickness of the thickest part is only about 4mm, and the utilization rate of the target 3 is improved to more than 60 percent. Meanwhile, the film forming uniformity of the product is improved from about 3 percent to about 0.8 percent. The utilization rate of the target 3 and the uniformity of the substrate film are greatly improved, and the 'quantity' change is generated.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, wherein the magnetic field strength of the strip permanent magnet 8 of the apparatus is: 500-600 gauss.
In the present embodiment, the magnetic field strength of the strip permanent magnet 8 is preferably: 500-600 gauss.
In some embodiments, the present invention provides a magnetron sputtering apparatus for physical vapor deposition, the number of the strip permanent magnets 8 of the apparatus is: 6 or 8 or 10.
In this embodiment, the number of the strip permanent magnets 8 is preferably: 6 or 8 or 10.
Claims (10)
1. A magnetron sputtering apparatus for physical vapor deposition, comprising: a magnetron sputtering device base (7), a bar-shaped permanent magnet (8) and a magnet position adjusting mechanism (9);
the bar-shaped permanent magnets (8) are uniformly distributed in the magnetron sputtering device base (7) along the radial direction, the positions of the bar-shaped permanent magnets in the radial direction are the same, the bar-shaped permanent magnets are arranged in an even number of more than six, the N poles and the S poles of two adjacent bar-shaped permanent magnets (8) are staggered, when the N pole of a first bar-shaped permanent magnet (8) points to the circle center of the magnetron sputtering device base (7) and the S pole points to the circumference of the magnetron sputtering device base (7), the N pole of an adjacent second magnet points to the circumference of the magnetron sputtering device base (7), and the S pole points to the circle center of the magnetron sputtering device base (7);
the magnet position adjusting mechanism (9) is fixed on the magnetron sputtering device base (7), is positioned above the bar-shaped permanent magnet (8), is connected with the bar-shaped permanent magnet (8), and is used for driving the bar-shaped permanent magnet (8) to move along the radial direction of the magnetron sputtering device; and a magnet position adjusting mechanism (9) is arranged above each strip-shaped permanent magnet (8).
2. The device according to claim 1, wherein the magnet position adjustment mechanism (9) comprises:
a stepping motor (14); the screw rod (12) is connected with the stepping motor (14); a slide block (13) mounted on the screw rod (12);
the stepping motor (14) and the screw rod (12) are fixed on the magnetron sputtering device base (7);
the sliding block (13) is connected with the strip-shaped permanent magnet (8), and a magnetic separation sheet (15) is arranged between the sliding block (13) and the strip-shaped permanent magnet (8);
when the stepping motor (14) rotates, the sliding block (13) slides along the screw rod (12),
the strip-shaped permanent magnet (8) connected with the sliding block (13) is driven to adjust the position along the screw rod (12), namely along the radial direction of the magnetron sputtering device base (7).
3. The apparatus according to claim 2, wherein the magnet position adjustment mechanism (9) further comprises:
and the position sensor is used for detecting the position of the strip-shaped permanent magnet (8).
4. The device according to claim 2, characterized in that the speed of movement of the magnet position adjustment mechanism (9) is: 6-10 mm/s.
5. The apparatus according to any one of claims 1-4, wherein:
the positions of the strip-shaped permanent magnets (8) in the same group of closed magnetic lines of force on the radial direction of the magnetron sputtering device base (7) are kept consistent, namely the centers of the strip-shaped permanent magnets (8) in the same group of closed magnetic lines of force are always on the same circumferential line.
6. The apparatus of any of claims 1-4, further comprising:
and the rotating motor (10) is fixed on the magnetron sputtering device base (7) and is used for driving the magnetron sputtering device to rotate integrally.
7. The device according to claim 6, characterized in that the rotational speed of the rotating electrical machine (10) is: 60-90 turns/min.
8. The apparatus of any of claims 1-4, further comprising:
and the annular permanent magnet (11) is fixed on the edge of the magnetron sputtering device base (7) and surrounds the magnetron sputtering device, and the S pole of the annular permanent magnet (11) faces upwards and the N pole of the annular permanent magnet faces downwards.
9. A device according to any one of claims 1-4, characterized in that the magnetic field strength of the strip-shaped permanent magnet (8) is: 500-600 gauss.
10. Device according to any one of claims 1 to 4, characterized in that the number of bar-shaped permanent magnets (8) is: 6 or 8 or 10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111499885.0A CN114086144A (en) | 2021-12-09 | 2021-12-09 | Magnetron sputtering device for physical vapor deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111499885.0A CN114086144A (en) | 2021-12-09 | 2021-12-09 | Magnetron sputtering device for physical vapor deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114086144A true CN114086144A (en) | 2022-02-25 |
Family
ID=80307096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111499885.0A Pending CN114086144A (en) | 2021-12-09 | 2021-12-09 | Magnetron sputtering device for physical vapor deposition |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114086144A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114231923A (en) * | 2021-12-10 | 2022-03-25 | 华虹半导体(无锡)有限公司 | Magnetron of magnetron sputtering device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000273627A (en) * | 1999-03-23 | 2000-10-03 | Sanyo Shinku Kogyo Kk | Magnetron sputtering method |
| US6132565A (en) * | 1999-10-01 | 2000-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd | Magnetron assembly equipped with traversing magnets and method of using |
| TW421819B (en) * | 1999-09-07 | 2001-02-11 | Taiwan Semiconductor Mfg | Sweeping magnetron sputtering apparatus |
| JP2001271163A (en) * | 2000-03-24 | 2001-10-02 | Ulvac Japan Ltd | Magnetic neutral loop discharge sputtering system |
| CN104928635A (en) * | 2014-03-21 | 2015-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering chamber and magnetron sputtering equipment |
| CN216712226U (en) * | 2021-12-09 | 2022-06-10 | 盛吉盛(宁波)半导体科技有限公司 | Magnetron sputtering device for physical vapor deposition |
-
2021
- 2021-12-09 CN CN202111499885.0A patent/CN114086144A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000273627A (en) * | 1999-03-23 | 2000-10-03 | Sanyo Shinku Kogyo Kk | Magnetron sputtering method |
| TW421819B (en) * | 1999-09-07 | 2001-02-11 | Taiwan Semiconductor Mfg | Sweeping magnetron sputtering apparatus |
| US6132565A (en) * | 1999-10-01 | 2000-10-17 | Taiwan Semiconductor Manufacturing Company, Ltd | Magnetron assembly equipped with traversing magnets and method of using |
| JP2001271163A (en) * | 2000-03-24 | 2001-10-02 | Ulvac Japan Ltd | Magnetic neutral loop discharge sputtering system |
| CN104928635A (en) * | 2014-03-21 | 2015-09-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering chamber and magnetron sputtering equipment |
| CN216712226U (en) * | 2021-12-09 | 2022-06-10 | 盛吉盛(宁波)半导体科技有限公司 | Magnetron sputtering device for physical vapor deposition |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114231923A (en) * | 2021-12-10 | 2022-03-25 | 华虹半导体(无锡)有限公司 | Magnetron of magnetron sputtering device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5833815A (en) | Sputter deposition system | |
| CN105102671B (en) | HIPIMS sputtering method and HIPIMS sputtering system | |
| KR0165860B1 (en) | Magnetron sputtering device | |
| CN102227514B (en) | Sputtering equipment, sputtering method and method for manufacturing electronic device | |
| US4025410A (en) | Sputtering apparatus and methods using a magnetic field | |
| CN103374705B (en) | A kind of magnetic control sputtering device | |
| US9812304B2 (en) | Method of fine tuning a magnetron sputtering electrode in a rotatable cylindrical magnetron sputtering device | |
| WO2009085157A1 (en) | Prediction and compensation of erosion in a magnetron sputtering target | |
| CN216712226U (en) | Magnetron sputtering device for physical vapor deposition | |
| CN114086144A (en) | Magnetron sputtering device for physical vapor deposition | |
| US20090314631A1 (en) | Magnetron With Electromagnets And Permanent Magnets | |
| CN115449763B (en) | Fan-shaped magnet structure for magnetron sputtering and magnetron sputtering equipment | |
| GB2310433A (en) | Cathode sputtering | |
| CN1948548A (en) | Magnetic mirror field constrained bitarget non balancing magnetron sputtering method | |
| US6464841B1 (en) | Cathode having variable magnet configuration | |
| CN109666910B (en) | Production process of coated plastic tableware | |
| CN115181954B (en) | Electromagnetically controlled physical vapor deposition apparatus | |
| CN214655217U (en) | Magnetron sputtering target follows workpiece and moves device | |
| CN205934013U (en) | Vacuum magnetron spatters sector magnet seat and magnetism boots of equipment | |
| RU2242821C2 (en) | Magnetron spraying system | |
| CN111411337B (en) | Excitation modulation anode auxiliary magnetron sputtering ion coating system | |
| US8852412B2 (en) | Magnetron source and method of manufacturing | |
| Bugaev et al. | Improvement of coating deposition and target erosion uniformity in rotating cylindrical magnetrons | |
| CN114606472B (en) | Film plating workpiece bearing device and roller type film plating machine | |
| CN1040234C (en) | Arc source with rotary magneitcally-controlled columnar cathode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |