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CN114068464A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN114068464A
CN114068464A CN202110878280.6A CN202110878280A CN114068464A CN 114068464 A CN114068464 A CN 114068464A CN 202110878280 A CN202110878280 A CN 202110878280A CN 114068464 A CN114068464 A CN 114068464A
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CN
China
Prior art keywords
bonding layer
bonding
semiconductor device
layer
sintered
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Pending
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CN202110878280.6A
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English (en)
Inventor
越智正三
北浦秀敏
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Panasonic Intellectual Property Management Co Ltd
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Panasonic Intellectual Property Management Co Ltd
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Publication of CN114068464A publication Critical patent/CN114068464A/zh
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Abstract

一种半导体装置(1)，具备：绝缘基板(2)；电极(3)，其设置在绝缘基板(2)上；接合层(5)，其设置在电极(3)上，由平均粒径为纳米级的金属粒的烧结体构成；以及半导体元件(6)，其经由接合层(5)与电极(3)接合，接合层(5)的层厚为220μm以上且700μm以下。

Description

半导体装置及其制造方法
技术领域
本公开涉及半导体装置及其制造方法。
背景技术
在用于车载充电器的逆变器控制等的电力变换用半导体装置中，搭载有IGBT(Insulated Gate Bipolar Transistor：绝缘栅双极晶体管)、MOSFET(Metal-oxide-semiconductor Field-effect Transistor：金属氧化物半导体场效应晶体管)、二极管等纵型半导体元件。在这些半导体元件的表面以及背面形成有基于金属金属化的电极，在一般半导体装置的情况下，半导体元件的背面侧的背面电极和电路基板经由焊料接合部连接。
在用于电力变换用半导体装置的接合材料中，存在半导体元件的发热量增大的倾向，因而期望高耐热性能。然而，在现状下，并没有发现无铅且具有高耐热性能的焊料材料。因此，作为代替焊料接合的材料接合技术，研究了将利用了金属粒子的烧结现象的烧结接合技术应用于电力变换用半导体装置。用于烧结接合技术的烧结接合材料包含金属粒子和有机成分。在烧结接合技术中，通过由烧结接合材料包含的金属粒子的烧结现象形成的多孔质形状的接合层，进行与被接合构件的接合。
通常，已知若金属粒子的粒径变小至纳米尺寸，每个粒子的构成原子数变少，则表面积对粒子的体积的影响急剧增大，与块状比较，熔点、烧结温度大幅下降。报告了各种利用了这样的金属纳米粒子的低温烧结性的烧结接合技术。
例如，在专利文献1中，公开了在将包含金属超微粒的粒子层设置在基材的表面的接合材料中，在基材包含金属时，适合于确保金属结合的接合材料构造。在专利文献2中公开了如下的半导体装置，即，是一种电子构件彼此经由接合层而电连接的半导体装置，接合层包含：Ag基体(matrix)，其包含比100nm小的晶粒；以及分散相，其分散在Ag基体中，并包含硬度比Ag高的金属X。在专利文献3中公开了一种如下的半导体装置，所述半导体装置具备：绝缘板；电极，其设置在绝缘板上，并具有凹部；接合层，其设置在电极上且包含平均粒径为10nm以上且150nm以下的金属粒的烧结体；以及半导体元件，其经由接合层与电极接合，凹部不到达电极与接合层的接合面的端部。
在先技术文献
专利文献
专利文献1：日本特开2007-214340号公报
专利文献2：日本特开2012-124497号公报
专利文献3：日本专利第6632686号公报
发明内容
本公开的实施方式涉及的半导体装置具备：
绝缘基板；
电极，其设置在所述绝缘基板上；
接合层，其设置在所述电极上，并由平均粒径为纳米级(order)的金属粒的烧结体构成；以及
半导体元件，其经由所述接合层与所述电极接合，
所述接合层的层厚为220μm以上且700μm以下。
本公开的实施方式涉及的半导体装置的制造方法包括：
在与绝缘基板接合的电极上印刷包含金属纳米粒子的第1烧结接合材料的工序；
在所述第1烧结接合材料上载置由平均粒径为纳米级的金属粒的烧结体构成的第2接合层的工序；
在所述第2接合层上印刷包含金属纳米粒子的第3烧结接合材料的工序；
在所述第3烧结接合材料上载置半导体元件的工序；以及
在载置所述半导体元件后，加压并加热，使所述第1烧结接合材料和所述第3烧结接合材料烧结，形成包含所述第2接合层的烧结接合层，经由所述烧结接合层将所述电极和所述半导体元件接合的工序。
附图说明
图1是示出本公开的实施方式涉及的半导体装置的结构的剖视图。
图2是示出本公开的实施方式涉及的半导体装置的结构的剖视图。
图3是示出本公开的实施方式涉及的半导体装置的结构的俯视图。
图4A是示出本公开的实施方式涉及的半导体装置的制造方法的图。
图4B是示出本公开的实施方式涉及的半导体装置的制造方法的图。
图4C是示出本公开的实施方式涉及的半导体装置的制造方法的图。
图4D是示出本公开的实施方式涉及的半导体装置的制造方法的图。
图4E是示出本公开的实施方式涉及的半导体装置的制造方法的图。
图4F是示出本公开的实施方式涉及的半导体装置的制造方法的图。
图5A是示出本公开的实施方式涉及的第2接合层的制造方法的图。
图5B是示出本公开的实施方式涉及的第2接合层的制造方法的图。
图5C是示出本公开的实施方式涉及的第2接合层的制造方法的图。
图5D是示出本公开的实施方式涉及的第2接合层的制造方法的图。
图5E是示出本公开的实施方式涉及的第2接合层的制造方法的图。
图5F是示出本公开的实施方式涉及的第2接合层的制造方法的图。
附图标记说明
1：半导体装置；
2：绝缘基板；
3、4：电极；
5：接合层；
6：半导体元件；
7：第1接合层；
8：第2接合层；
9：第3接合层；
10：金属层；
31：第1烧结接合材料；
33：第3烧结接合材料；
34、35、44：金属掩模；
41：支承底座；
42：第2烧结接合材料；
43a、43b：脱模剂。
具体实施方式
在本公开的实施方式涉及的半导体装置中，由于由平均粒径为纳米级的金属粒的烧结体构成的接合层的层厚比以往厚，所以即使是高温环境下的使用，也能够抑制可能在接合层中产生的裂纹，能够使接合可靠性提高。
在上述专利文献1以及专利文献2所公开的以往的半导体装置中，由于因例如175℃～300℃等高温与低温的反复而产生的电路基板的电极与接合层的热应力，存在在接合层产生裂纹而得不到良好的接合可靠性的情况。
在专利文献3所公开的以往的半导体装置中，通过有意地使局部的位置产生裂纹，从而缓和施加于接合层整体的应力。但是，存在如下情况，即，由于存在裂纹而产生裂纹进展，从而得不到良好的接合可靠性。
本公开是为了解决如上所述的课题而完成的，其目的在于，提供一种在使用金属纳米粒子的烧结接合技术中接合层的可靠性良好的半导体装置以及该半导体装置的制造方法。
如专利文献1～3所公开的现有技术那样，只是将包含金属纳米粒子的烧结接合材料简单地印刷在电极上进行加热，是难以得到层厚厚的接合层的。这是因为，在烧结接合材料包含金属纳米粒子的情况下，如后所述，即使在电极上配置金属掩模并将烧结接合材料印刷得厚，在加热后去除了金属掩模时，所形成的接合层也会向外侧松垂(だれ)。
本发明人们鉴于上述情形，进行了潜心研究，完成了在使用金属纳米粒子的烧结接合技术中，接合层的层厚比以往厚的半导体装置。
以下，参照附图对本公开的实施方式进行说明。但是，本公开的半导体装置并不限定于该附图的方式，能够在不脱离本公开的主旨的范围内采用各种方式。另外，有时对于相同的构成要素，标注相同的附图标记，并省略说明。
图1以及图2是本公开的实施方式涉及的半导体装置1的剖视图。图3是本公开的实施方式涉及的半导体装置1的俯视图。
<1.结构>
如图1～图3所示，本公开的实施方式涉及的半导体装置1具备绝缘基板2、设置在绝缘基板2上的电极3以及电极4、设置在电极3上并且由平均粒径为纳米级的金属粒的烧结体构成的接合层(烧结接合层)5、以及经由接合层5与电极3接合的半导体元件6。
<1-1.绝缘基板>
绝缘基板2对电极3、电极4、接合层5、以及半导体元件6进行支承。绝缘基板2没有特别限定，但是能够使用氮化硅、氧化铝等陶瓷基板。
<1-2.电极>
电极3是图案化的布线电极。电极4是在下部设置如散热器这样的散热构件(省略图示)的电极。电极3以及电极4的材料优选为铜(Cu)、铝(Al)。通过使用导电性优异的铜、铝等材料，提高半导体装置1的电特性。此外，也可以对电极3实施Au、Pt、Pd、Ag、Cu、Ti以及Ni中的任一种的镀敷处理或溅射处理。即，与电极3的金属材料不同的金属层10设置在电极3上，该金属层10的材料可以是Au、Pt、Pd、Ag、Cu、Ti以及Ni中的任一种。由此，电极3与接合层5的接合性变得良好，即使在高温环境下，也能够得到具有优异的接合可靠性的半导体装置1。另外，如图1以及图2那样，电极只要设置在绝缘基板2的两面、或绝缘基板2的任一个表面即可。因而，例如，也可以省略电极4，散热构件(省略图示)与绝缘基板2直接接合。
<1-3.接合层>
接合层(烧结接合层)5将电极3和半导体元件6接合。接合层5通过将使金属纳米粒子分散到有机溶剂中的烧结接合材料印刷在电极3上，加压并加热，从而使多个金属纳米粒子烧结结合而形成。由此，接合层5由平均粒径为纳米级的金属粒的烧结体构成。
金属粒的材料优选为Ag。通过对包含Ag纳米粒子的烧结接合材料进行烧结而形成多孔质形状的接合层，从而能够缓和因例如175～300℃等高温与低温的反复而产生的电极3与接合层5的热应力，得到良好的接合可靠性。
金属粒的平均粒径优选为10nm以上且100nm以下。通过减小烧结体的金属粒的平均粒径，接合层5的变形能力变高，即使在高温环境下也能够得到充分的延伸率，能够得到良好的接合可靠性。另一方面，若烧结体的金属粒的平均粒径过小，则金属粒的烧结结合变得不充分，接合强度不足。因此，平均粒径优选为10nm以上。为了减小金属粒的平均粒径，需要所使用的烧结接合材料包含的烧结前的金属纳米粒子的平均粒径小。特别期望烧结前的金属纳米粒子的平均粒径为50nm以下。另外，金属粒的平均粒径例如能够使用如SEM(扫描型电子显微镜)、TEM(透射型电子显微镜)那样高倍率且分辨率高的装置来进行测定。具体地，例如，在SEM图像中或TEM图像中任意地描绘直线，求出成为该直线横穿的对象的多个金属粒的各面积，根据该各面积求出各当量圆直径(
Figure BDA0003188613500000061
相当直径)，计算其总和。对任意的五个视野进行该操作，合计计算200个以上的当量圆直径。优选设将五个视野中的当量圆直径的总和除以测定对象的金属粒的数量所得到的值为金属粒的平均粒径。或者，金属粒的平均粒径例如也能够通过电子背散射衍射法(EBSD：Electron BackScatter Diffraction)测定。在该情况下，将晶界定义为晶体取向5°以上，求出各个金属粒的面积，根据该面积求出当量圆直径。然后，优选将求出的当量圆直径的平均值设为金属粒的平均粒径。
接合层5的层厚为220μm以上且700μm以下。通过使接合层5的层厚为220μm以上，能够缓和因例如175℃～300℃等高温与低温的反复而产生的电极3与接合层5的热应力，能够得到良好的接合可靠性。通过使接合层5的层厚为700μm以下，防止对烧结接合材料进行印刷时的气泡的产生、或刚刚印刷之后的周边部的松垂(ダレ，sagging)，维持稳定的形状，由此能够得到良好的接合可靠性。为了更有效地发挥上述的效果，接合层5的层厚优选为290μm以上，更优选为350μm以上。此外，接合层5的层厚优选为520μm以下，更优选为460μm以下。
接合层(烧结接合层)5的形态只要能够使层厚厚并且使接合可靠性提高，就没有特别限定。例如，在剖面观察下，接合层5的侧面也可以是锥形形状。例如，如图1所示，在剖面观察下，接合层5的侧面也可以具有阶梯状的台阶。例如，接合层5也可以层叠多个接合层。例如，如图2所示，接合层5也可以是层叠有多个接合层的形态，并且接合层5的侧面具有阶梯状的台阶。在图2中，作为接合层的一个实施方式，接合层5具备设置在电极3上的第1接合层7、设置在第1接合层7上的第2接合层8、以及设置在第2接合层8上的第3接合层9。以下，对图2所示的半导体装置1进行详细说明。
第1接合层7以及第3接合层9的层厚优选分别为10μm以上且100μm以下。通过使第1接合层7以及第3接合层9的层厚分别为10μm以上，在高温环境下的使用中，能够缓和因低温与高温的反复而产生的电极3与接合层5的热应力，能够得到良好的接合可靠性。通过使第1接合层7以及第3接合层9的层厚分别为100μm以下，从而在第1接合层7以及第3接合层9的烧结前的第1烧结接合材料以及第3烧结接合材料的烧结时缓和烧结体的收缩量。由此，能够缓和在电极3与接合层5之间产生的应力，能够保持稳定的形状。为了更有效地发挥上述的效果，第1接合层7以及第3接合层9的层厚分别更优选为40μm以上，更进一步优选为50μm以上。此外，第1接合层7以及第3接合层9的层厚分别更优选为70μm以下，更进一步优选为60μm以下。
第2接合层8的层厚优选为200μm以上且500μm以下。通过使第2接合层的层厚为200μm以上，能够缓和因例如175℃～300℃等高温与低温的反复而产生的电路基板的电极与接合层的热应力，能够得到良好的接合可靠性。通过使第2接合层的层厚为500μm以下，在第2接合层8的烧结前的第2烧结接合材料的烧结时，能够缓和烧结体的收缩量，能够保持稳定的形状。为了更有效地发挥上述的效果，第2接合层8的层厚更优选为250μm以上，更进一步优选为300μm以上。此外，第2接合层8的层厚更优选为450μm以下，更进一步优选为400μm以下。优选第2接合层8的层厚比第1接合层7以及第3接合层9各自的层厚厚。由此，能够使接合层5的层厚厚，使接合可靠性提高。
如图3所示，第1接合层7、第2接合层8以及第3接合层9各自在俯视观察下为矩形形状。在图2中是正方形。第1接合层7、第2接合层8和第3接合层9在俯视观察下的面积优选满足下述数式(1)。
第1接合层≥第2接合层≥第3接合层 (1)
由此，在第1接合层7上形成第2接合层8时，能够抑制由位置精度的偏差、尺寸偏差引起的突出。此外，在第2接合层8上形成第3接合层9时，也同样地能够抑制由位置精度的偏差、尺寸偏差引起的突出。
此外，在满足上述数式(1)的情况下，如图2所示，半导体装置1优选具有由第1接合层7、第2接合层8以及第3接合层9的侧面构成的阶梯状的台阶。由此，上层不会从下层突出，而能够更可靠地层叠。
另外，在无法识别图2中的接合层5的层间(即，第1接合层7与第2接合层8的界面以及第2接合层8与第3接合层9的界面)的情况下，能够相当于图1。
<1-4.半导体元件>
半导体元件6的材料优选为碳化硅、氮化镓、砷化镓以及金刚石中的任一种。包含这些宽带隙半导体材料的半导体元件6与包含硅的半导体元件相比动作极限的结(junction)温高，因此能够在高温环境下使用。使用包含硅的半导体元件的半导体装置只能在大致150℃以下的状态下使用，但是包含这些宽带隙半导体材料的半导体元件6的半导体装置1在250℃～300℃这样的高温下也能够使用。
<1-5.尺寸>
上述的各构件的尺寸没有特别限定，但是作为优选的一个例子，可列举绝缘基板2为24mm×24mm×厚度0.3mm，电极3以及电极4为22mm×22mm×厚度0.8mm，第1接合层7为7mm×7mm×厚度0.05mm，第2接合层8为6mm×6mm×厚度0.25mm，第3接合层9为5mm×5mm×厚度0.05mm，半导体元件6为5mm×5mm×厚度0.3mm。
<1-6.作用效果>
根据本公开的实施方式，能够提供一种在使用金属纳米粒子的烧结接合技术中接合层的可靠性良好的半导体装置及其制造方法。
具体地，根据上述的结构，由于接合层5的层厚比以往厚，所以能够降低因电极3与接合层5的热膨胀差而产生的应力，能够抑制能在接合层5中产生的裂纹，能够提供接合可靠性高的半导体装置1。具体地，能够缓和因例如175℃～300℃等高温与低温的反复而产生的电极3与接合层5的热应力，能够得到良好的接合可靠性。作为更具体的一个例子，即使将-40℃～200℃之间的低温以及高温的反复进行1000次循环，也能够抑制能在接合层产生的热应力，抑制裂纹的产生，能够使接合可靠性提高。
<2.制造方法>
接着，对本公开的实施方式涉及的半导体装置1的制造方法进行说明。图4A～图4F是示出本公开的实施方式涉及的半导体装置1的制造方法的图。
首先，如图4A所示，准备包含绝缘基板2和与绝缘基板2接合的电极3以及电极4的DBC(Direct Bonded Copper，直接敷铜)基板。然后，在电极3上配置金属掩模34，印刷包含金属纳米粒子的第1烧结接合材料31。金属掩模34的厚度例如为0.1mm。
接着，如图4B所示，使第1烧结接合材料31的溶剂成分干燥后，去除金属掩模34。
接着，如图4C所示，在第1烧结接合材料31上载置由平均粒径为纳米级的金属粒的烧结体构成的第2接合层8。第2接合层8的制造方法将在后面叙述。
接着，如图4D所示，在第2接合层8上配置金属掩模35，印刷包含金属纳米粒子的第3烧结接合材料33。金属掩模35的厚度例如为0.1mm。
接着，如图4E所示，使第3烧结接合材料33的溶剂成分干燥后，去除金属掩模35。
接着，如图4F所示，在第3烧结接合材料33上载置半导体元件6。然后，加压并加热，使第1烧结接合材料31以及第3烧结接合材料33烧结。由此，形成包含第2接合层8的接合层(烧结接合层)5。在图4F中，第1烧结接合材料31以及第3烧结接合材料33被烧结，分别形成第1接合层7以及第3接合层9。由此，第1接合层7、第2接合层8和第3接合层9被层叠而形成接合层(烧结接合层)5。此时，第1烧结接合材料31和第3烧结接合材料33通过烧结可能在平面方向上收缩5％，在厚度方向上收缩50％。加热条件优选如下，即，在进行60℃下保持30分钟的预加热后，用70分钟升温至270℃，在270℃下保持60分钟。
如以上那样，电极3和半导体元件6经由接合层5(第1接合层7、第2接合层8和第3接合层9)接合，制造半导体装置1。另外，在图4F中，示出了接合层5由多个接合层层叠的半导体装置1，但是在无法识别接合层5的层间的情况下，可制造如图1所示的半导体装置1。
接着，对本公开的实施方式涉及的第2接合层8的制造方法进行说明。图5A～图5F是示出本公开的实施方式涉及的第2接合层8的制造方法的图。
首先，如图5A所示，准备支承底座41。支承底座41优选包含玻璃、铜、黄铜等。
接着，如图5B所示，在支承底座41上喷涂第1脱模剂43a，使其在100℃下干燥60分钟。第1脱模剂43a优选使用例如氮化硼(ボ口ンナイ卜ライド，boron nitride)等。第1脱模剂43a的厚度例如为10μm～20μm。
接着，如图5C所示，在第1脱模剂43a上喷涂第2脱模剂43b，使其在100℃下干燥60分钟。第2脱模剂43b也同样优选使用氮化硼等。第1脱模剂43a以及第2脱模剂43b的合计厚度例如为15μm～30μm。这样，通过涂敷两次脱模剂，堵塞针孔(pin hole)等间隙，第2接合层8的脱模性提高。
接着，如图5D所示，在第2脱模剂43b上配置金属掩模44，印刷包含金属纳米粒子的第2烧结接合材料42。金属掩模44的厚度例如为0.5mm。
接着，如图5E所示，使第2烧结接合材料42的溶剂成分干燥后，去除金属掩模44。
接着，图5F所示，对第2烧结接合材料42进行加热并使其烧结，形成第2接合层8后，将第2接合层8从支承底座41脱模。此时，第2烧结接合材料42通过烧结能在平面方向上收缩5％，在厚度方向上收缩50％。加热条件优选为如下，即，进行在60℃下保持30分钟的预加热后，用70分钟升温至270℃，在270℃下保持60分钟。如以上那样，制造第2接合层8。
根据上述的半导体装置1的制造方法，预先准备层厚厚的第2接合层8。然后，在电极3上印刷第1烧结接合材料31，在其上载置该已预先准备的第2接合层8，进而在其上印刷第3烧结接合材料33，由此在加热后，能够得到层厚厚的接合层(烧结接合层)5。
如上所述，在以往的方法中，将烧结接合材料印刷得厚，从而一次性得到膜厚大的接合层是困难的。进而，在将烧结接合材料印刷得厚的情况下，可预想到烧结时的尺寸收缩变大，在该时刻施加在接合层的应力变大。根据上述的半导体装置1的制造方法，在将第2接合层8载置于第1烧结接合材料31上时，由于第2接合层8已经进行了尺寸收缩，所以施加在第1烧结接合材料31以及第3烧结接合材料33的烧结后的接合层5的应力变小。其结果是，能够使接合可靠性提高。
根据上述的第2接合层8的制造方法，虽然第2烧结接合材料42在烧结时收缩，但是通过使用脱模剂来使脱模性提高，能够应对收缩，在不破裂的情况下以单体形成膜厚大的接合层。
[产业上的可利用性]
本公开的半导体装置能够降低因基板上的电极与接合层的热膨胀差而产生的应力，即使在高温环境下使用，接合层的可靠性也良好，能够应用于车载充电器等的逆变器控制所使用的高性能的功率模块等。

Claims (14)

1.一种半导体装置，具备：
绝缘基板；
电极，其设置在所述绝缘基板上；
接合层，其设置在所述电极上，由平均粒径为纳米级的金属粒的烧结体构成；以及
半导体元件，其经由所述接合层与所述电极接合，
所述接合层的层厚为220μm以上且700μm以下。
2.根据权利要求1所述的半导体装置，其中，
在剖面观察下，所述接合层的侧面具有阶梯状的台阶。
3.根据权利要求1所述的半导体装置，其中，
所述接合层具备：
第1接合层，其设置在所述电极上；
第2接合层，其设置在所述第1接合层上；以及
第3接合层，其设置在所述第2接合层上，
所述第2接合层的层厚比所述第1接合层以及所述第3接合层各自的层厚厚。
4.根据权利要求3所述的半导体装置，其中，
所述第2接合层的层厚为200μm以上且500μm以下。
5.根据权利要求3或4所述的半导体装置，其中，
所述第1接合层和所述第3接合层的层厚分别为10μm以上且100μm以下。
6.根据权利要求3～5中任一项所述的半导体装置，其中，
所述第1接合层、所述第2接合层和所述第3接合层在俯视观察下的面积满足下述式(1)：
第1接合层的面积≥第2接合层的面积≥第3接合层的面积(1)。
7.根据权利要求6所述的半导体装置，其中，
在剖面观察下，具有由所述第1接合层、所述第2接合层以及所述第3接合层的侧面构成的阶梯状的台阶。
8.根据权利要求1～7中任一项所述的半导体装置，其中，
所述金属粒的平均粒径为10nm以上且100nm以下。
9.根据权利要求1～8中任一项所述的半导体装置，其中，
所述金属粒的材料为Ag。
10.根据权利要求1～9中任一项所述的半导体装置，其中，
所述电极的材料为Cu或者Al。
11.根据权利要求1～10中任一项所述的半导体装置，其中，
与所述电极的金属材料不同的金属层设置在所述电极上，所述金属层的材料是Au、Pt、Pd、Ag、Cu、Ti以及Ni中的任一种。
12.根据权利要求1～11中任一项所述的半导体装置，其中，
所述半导体元件的材料是碳化硅、氮化镓、砷化镓以及金刚石中的任一种。
13.一种半导体装置的制造方法，包括以下工序：
在与绝缘基板接合的电极上印刷包含金属纳米粒子的第1烧结接合材料；
在所述第1烧结接合材料上载置由平均粒径为纳米级的金属粒的烧结体构成的第2接合层；
在所述第2接合层上印刷包含金属纳米粒子的第3烧结接合材料；
在所述第3烧结接合材料上载置半导体元件；以及
在载置所述半导体元件后加压并加热，使所述第1烧结接合材料和所述第3烧结接合材料烧结，形成包含所述第2接合层的烧结接合层，经由所述烧结接合层将所述电极和所述半导体元件接合。
14.根据权利要求13所述的半导体装置的制造方法，其中，
所述第2接合层通过如下方法预先准备，所述方法包括以下工序：
准备支承底座；
在所述支承底座上涂敷第1脱模剂并使所述第1脱模剂干燥；
在所述第1脱模剂上涂敷第2脱模剂并使所述第2脱模剂干燥；
在所述第2脱模剂上印刷包含金属纳米粒子的第2烧结接合材料；
对所述第2烧结接合材料进行加热并使所述第2烧结接合材料烧结而形成第2接合层；以及
将所述第2接合层从所述支承底座脱模。
CN202110878280.6A 2020-08-04 2021-07-30 半导体装置及其制造方法 Pending CN114068464A (zh)

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