CN103955111B - The manufacture method of base board for optical mask group and photomask group and display device - Google Patents
The manufacture method of base board for optical mask group and photomask group and display device Download PDFInfo
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- CN103955111B CN103955111B CN201410219079.7A CN201410219079A CN103955111B CN 103955111 B CN103955111 B CN 103955111B CN 201410219079 A CN201410219079 A CN 201410219079A CN 103955111 B CN103955111 B CN 103955111B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/76—Patterning of masks by imaging
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Optical Filters (AREA)
Abstract
The present invention provides the manufacture method of base board for optical mask group and photomask group and display device.Base board for optical mask group has：1st base board for optical mask, it is used to form the transfer pattern to be transferred to transfer printing body on main surface and turn into the 1st photomask；And the 2nd base board for optical mask, it, which is used to be formed on main surface, treats to be transferred to the transfer pattern of the transfer printing body with the transfer pattern overlapping and turn into the 2nd photomask, wherein, when height of the arbitrary point M relative to reference plane set in the area of the pattern on the main surface for setting the 1st base board for optical mask is Zm, if the point N at position corresponding with the point M on the 1st base board for optical mask in the area of the pattern on the main surface of the 2nd base board for optical mask is Zn relative to the height of the reference plane, and when having obtained the Zm and Zn difference Zd, in the area of the pattern, the maximum Δ Zdmax of the Zd is less than 17 μm.
Description
The application be the applying date be on April 12nd, 2012, Application No. 201210106982.3, it is entitled that " light is covered
The divisional application of the application for a patent for invention of mould substrate and photomask and their group, manufacture method and printing transferring method ".
Technical field
The present invention relates to base board for optical mask, photomask, base board for optical mask group, photomask group, photomask manufacturer
Method and pattern transfer-printing method.
Background technology
The liquid crystal display device that computer or portable terminal device etc. have has following structure：It will be formed on Mght-transmitting base material
The TFT substrate for having TFT (thin film transistor (TFT)) array (array) and the colour filter that RGB pattern is formed with Mght-transmitting base material glue
Stick together, and enclosed liquid crystal between them.Colour filter (below be also referred to as CF) be by implement successively following process come
Manufacture：Black matrix (black matrix) layer for constituting color boundaries portion is formed on a main surface of Mght-transmitting base material；
And then red filter layer, Green color filter, indigo plant are formed on a main surface of the Mght-transmitting base material after being divided by black matrix layer
The colour filters such as chromogenic filter layer (are also referred to as color layer) below.Above-mentioned TFT and colour filter can be using the photoetching for having used photomask
To be manufactured.
On the other hand, when setting photomask (set) to carry out pattern transfer in exposure machine, photomask is due to deadweight
Flexure can be slightly produced, therefore the exposure machine supporting mechanism for being used for mitigating the flexure has been recorded in patent document 1.
In addition, the problem of being bent downwards due to deadweight for photomask when being supported on exposure machine, in order to obtain in water
There is the photomask-blank of high flat degree, documents 2 disclose following technical scheme during flat holding：For for photomask
Glass substrate, by calculating every piece of glass substrate due to the bending caused by its own weight relative to its thickness, by glass
Baseplate material is processed into and has carried out the shape that shape, the i.e. lower surface of pre-degeneration is recessed on the contrary with the bending, thus, glass base
Plate bends under horizontal attitude and is changed into just completely flat.
【Patent document 1】Japanese Unexamined Patent Publication 9-306832 publications
【Patent document 2】Chinese patent application Publication CN101006021A
It is required that improving the expectation of the performance of liquid crystal display device increasingly strengthens.Especially portable terminal device equidimension it is smaller and
The display device of fine image is needed in performance of several aspects requirement more than conventional product.Above-mentioned performance is the distinctness of color
Property (sharpness) (no muddy stain), reaction speed, resolving power etc..Expect for this, it is desirable to manufacture TFT and CF light
The pattern formation precision of mask is higher than ever.
For example, in the photomask of TFT formation, in order to improve the reaction speed of liquid crystal display device, so that TFT schemes
Case itself becomes trickle, or trickleer TFT mode etc. is applied in combination together with main TFT forms pattern on the photomask
When, it is necessary to subtly form the line width of fine dimension.In addition, when overlappingly using TFT and CF, if without extremely subtly
, then there is following risk in the positioning when coordinate precision of each pattern on control photomask and transfer：Produce therebetween
Raw position deviation, so that the work for producing liquid crystal is bad.
On the other hand, in the photomask of CF formation, following aspect still has problem.As described above, overlappingly making
During with black matrix layer and color layer, can while subtly form pattern on mask, pattern plane shape during due to transfer
Change and deviation etc. and produce grid deviation, now, the problems such as muddy stain being produced.
When forming black matrix layer and colour filter on Mght-transmitting base material using photomask, most advantageously using proximity
(proximity) expose.Because, need not in the structure of exposure machine compared with projection (projection) exposes
Complicated optical system, installation cost is relatively low, therefore production efficiency is high.But, in application proximity printing, in transfer
It is difficult to correct deformation implementation, therefore compared with projection exposure, transfer printing precision is easily deteriorated.
In proximity printing, keep being formed with the transfer printing body and photomask of resist film in mode relative to each other
Pattern plane, makes pattern plane downward, and from the rear side irradiation light of photomask, thus transfers pattern on resist film.
Now, predetermined slight gap (proximity gap) is set between photomask and transfer printing body.In addition, photomask has
The photomask on the main surface to being formed at transparency carrier carries out the transfer pattern of predetermined composition.
In general, when photomask is disposed proximate into formula exposure exposure machine, being protected by the holding member of exposure machine
Hold the outside of region on the main surface for being formed with transfer pattern, being formed with transfer pattern (also referred to as area of the pattern).
Herein, the photomask for being equipped on exposure machine is bent due to the weight of itself sometimes, but can utilize the holding of exposure machine
Mechanism carries out a certain degree of correction to above-mentioned flexure.For example, in the method for patent document 1, describing and supporting from below
The outside of the strong point of the holding member of photomask, applies the method for predetermined pressure from the top of mask.
But, inventors herein have recognized that following situation：Even if the method for documents 1,2 is for mitigating photomask
Flexure be useful to the influence in terms of pattern transfer, but the accurate display merely with this method for manufacture such use is filled
It is still insufficient to put.For example, having distinguished following situation：When carrying out above-mentioned proximity printing, although turn that photomask has
The formation precision of print pattern is sufficiently high and in reference range, but the overlapping essence for the transfer pattern being formed on transfer printing body
Degree is insufficient, may produce the unfavorable condition or muddy stain etc. in the work of liquid crystal display device.As liquid crystal display is filled
The continuous High precision put, it is impossible to allow the deterioration of such pattern overlapping precision.
The content of the invention
The purpose of the present application is, is transferred in the transfer that be will be formed in by proximity printing on photomask with pattern
To the transfer printing precision that pattern is improved during transfer printing body.Especially, it is therefore intended that, turned successively using multiple photomasks to same
When being transferred on print body, the overlapping accuracy of pattern is improved.
According to the 1st mode of the present invention there is provided a kind of base board for optical mask, it is used to form transfer figure on main surface
Case and as photomask, in the base board for optical mask, the maximum Δ of the variation in altitude of the area of the pattern on the main surface
Zmax is less than 8.5 μm.
Base board for optical mask according to the 2nd mode of the present invention there is provided the 1st mode, wherein, separate predetermined when setting
Standoff distance P is equally spaced set in each measuring point in the area of the pattern when being Z relative to the height of reference plane, the height
The maximum Δ Zmax that degree changes is the difference of the maxima and minima of the Z.
Base board for optical mask according to the 3rd mode of the present invention there is provided the 2nd mode, wherein, the standoff distance P
For 5mm≤P≤15mm.
According to the 4th mode of the present invention there is provided a kind of manufacture method of photomask, the manufacture method includes following process：
Using the base board for optical mask described in any one mode in the 1st~the 3rd mode, on the main surface of the base board for optical mask
Optical film is formed, and composition is implemented to the optical film, transfer pattern is consequently formed.
According to the 5th mode of the present invention there is provided a kind of photomask, the photomask is formed with transfer figure on main surface
Case, in the photomask, the maximum Δ Zmax of the variation in altitude of the area of the pattern on the main surface is less than 8.5 μm.
Photomask according to the 6th mode of the present invention there is provided the 5th mode, wherein, separate predetermined phase gauge setting
When height of each measuring point relative to reference plane in the area of the pattern is equally spaced set in from P for Z, the variation in altitude
Maximum Δ Zmax be the Z maxima and minima difference.
According to the present invention the 7th mode there is provided the 6th mode described in photomask, wherein, the standoff distance P be 5mm≤
P≦15mm。
Photomask according to the 8th mode of the present invention there is provided any one mode in the 5th~the 7th mode, its
In, the photomask is used for proximity printing.
Photomask according to the 9th mode of the present invention there is provided any one mode in the 5th~the 8th mode, its
In, there is colour filter manufacture pattern in the area of the pattern.
According to the 10th mode of the present invention there is provided a kind of pattern transfer-printing method, by any one in the 5th~the 9th mode
Photomask described in mode is disposed proximate to the exposure machine of formula exposure, and pattern transfer is carried out to transfer printing body.
According to the 11st mode of the present invention there is provided a kind of base board for optical mask group, it has：1st base board for optical mask, its
For forming the transfer pattern to be transferred to transfer printing body on main surface as the 1st photomask；And the 2nd photomask use
Substrate, it, which is used to be formed on main surface, treats the transfer that the transfer printing body is transferred to transfer pattern overlapping figure
Case and as the 2nd photomask, in the base board for optical mask group, the figure on the main surface for setting the 1st base board for optical mask
Height of the arbitrary point M relative to reference plane set in case region is Zm, if on the main surface of the 2nd base board for optical mask
Area of the pattern in the point N at the position corresponding with the point M on the 1st base board for optical mask relative to the benchmark
The height in face is Zn, and when having obtained the Zm and Zn difference Zd, in the area of the pattern, the maximum Δ of the Zd
Zdmax be 17 (μm) below.
According to the 12nd mode of the present invention there is provided a kind of photomask group, it has：1st photomask, is formed on main surface
Need to be transferred to the transfer pattern of transfer printing body；And the 2nd photomask, it is formed on main surface needs and described 1st turn
The transfer pattern of the transfer printing body is transferred to print pattern overlapping, in photomask setting, is covered when setting the 1st light
Height of the arbitrary point M relative to reference plane set in area of the pattern on the main surface of mould is Zm, if the 2nd photomask
Main surface on area of the pattern in the point N at the position corresponding with the point M on the 1st photomask relative to described
The height of reference plane is Zn, and when having obtained the Zm and Zn difference Zd, in the area of the pattern, the maximum of the Zd
Δ Zdmax be 17 (μm) below.
, will using the exposure machine of proximity printing according to the 13rd mode of the present invention there is provided a kind of pattern transfer-printing method
The 2nd photomask institute that the transfer that the 1st photomask that 12nd mode is recorded has is recorded with pattern and the 12nd mode
It is transferred to same transfer printing body the transfer pattern overlapping having.
According to the present application, it can be transferred in the transfer that be will be formed in by proximity printing on photomask with pattern
The transfer printing precision of pattern is improved during transfer printing body.Especially, it can entered successively using multiple photomasks to same transfer printing body
During row transfer, the overlapping accuracy of pattern is improved.
Brief description of the drawings
Fig. 1 is the flow chart of the outline of the manufacturing process for the colour filter for illustrating present embodiment.
Fig. 2 (a) is to be illustrated in the situation that proximity printing is carried out in the manufacturing process of the colour filter of present embodiment
Side view, (b) is its top view.
Fig. 3 (a) is the top view of the planar structure for the photomask for illustrating present embodiment, and (b) is to illustrate its variation
Top view.
Fig. 4 is the signal for being illustrated in the situation of pattern transfer printing precision deterioration on the transfer printing body for overlappingly carrying out pattern transfer
Figure, (a) shows the enlarged section for the 1st photomask to form black matrix layer, and (b) shows to form red filter layer the 2nd
The enlarged section of photomask, (c) shows the situation that pattern is transferred to resist film.
Fig. 5 is the flow chart of the manufacturing process for the photomask for illustrating present embodiment.
Fig. 6 is the schematic diagram for illustrating the situation that flatness is determined by incident laser.
Fig. 7 is the figure of the relation for the overlapping and grid deviation for showing base board for optical mask.
Fig. 8 is the figure for the flatness characteristic for illustrating main surface.
Fig. 9 is the signal for being illustrated in the situation of pattern transfer printing precision deterioration on the transfer printing body for overlappingly carrying out pattern transfer
Figure, (a) shows the enlarged section of the 1st photomask of the flatness trend for representing predetermined, and (b) shows expression and the 1st light
The enlarged section of 2nd photomask of mask identical flatness trend, (c) shows the feelings that pattern is transferred to resist film
Shape.
Label declaration
100：1st photomask；101：Transparency carrier (the 1st base board for optical mask)；103：Bearing surface；112p：Transfer is schemed
Case；133：Area of the pattern；200：2nd photomask；201：Transparency carrier (the 2nd base board for optical mask)；203：Bearing surface；212p：
Transfer pattern；233：Area of the pattern；500：Exposure machine；503：Support member.
Embodiment
<An embodiment of the invention>
An embodiment of the invention is illustrated below.
(1) manufacturing process of colour filter
First, the manufacturing process of colour filters of the 1~Fig. 3 of reference picture to being used in liquid crystal display device etc. illustrates.Fig. 1
It is the flow chart of the outline of the manufacturing process for the colour filter for illustrating present embodiment.Fig. 2 (a) is the filter for being illustrated in present embodiment
The side view of the situation of proximity printing is carried out in the manufacturing process of color chips, Fig. 2 (b) is its top view.Fig. 3 (a) is to illustrate this
The top view of the planar structure of the photomask of embodiment, Fig. 3 (b) is the top view for illustrating its variation.
As shown in figure 1, the colour filter 10 of liquid crystal display device is manufactured by implementing following process successively：Saturating
The black matrix layer 12p (Fig. 1 (a)~(e)) for constituting color boundaries portion is formed on one main surface of photosensitiveness base material 11；And then in quilt
Black matrix layer 12p divide after Mght-transmitting base material 11 a main surface on formed red filter layer 14p, Green color filter 15p,
The colour filters such as blue filter layer 16p (Fig. 1 (f)~(j)).Each process is illustrated below.
(formation of black matrix layer)
First, the Mght-transmitting base material 11 being made up of translucent resin or glass etc. is prepared, at one of Mght-transmitting base material 11
Light screening material film 12 is formed on main surface, resist film 13 (Fig. 1 (a)) is formed on light screening material film 12.
Then, using the 1st photomask 100 of black matrix formation and it is formed with light screening material film 12 as transfer printing body
It is configured to the Mght-transmitting base material 11 of resist film 13 in the exposure machine 500 of proximity printing (Fig. 1 (b), Fig. 2).
In addition, as shown in Fig. 3 (a) top view, the 1st photomask 100 possesses transfer pattern 112p pattern area
Domain 133, the transfer is to carry out predetermined composition to the photomask for being formed at transparency carrier 101 main surface with pattern 112p
Formed by (it is following, in addition to being formed with the region of transfer pattern, presumptive area to be formed is also set to pattern sometimes
Region 133).Transfer is, for example, clathrate with pattern 112p shape, to form black matrix layer 12p.In addition, being covered in the 1st light
On one main surface of the transparency carrier 101 of mould 100, in main table outside, constituting transparency carrier 101 of area of the pattern 133
The relative both sides of face periphery are respective nearby to have the bearing surface 103 abutted with the holding member 503 of exposure machine 500 respectively.
In bearing surface 103, photomask can be formed, can also expose a main surface of transparency carrier 101.
As shown in Fig. 2 (a), bearing surface 103 is supported from below respectively with the holding member 503 of exposure machine 500, thus makes the
1 photomask 100 is configured in exposure machine 500 with flat-hand position.And so that the transfer pattern that the 1st photomask 100 has
112p is with forming the resist film 13 on Mght-transmitting base material 11 relatively, such as small within more than 10 μm 300 μm
Every being configured.
1st photomask 100 and the Mght-transmitting base material 11 for being formed with light screening material film 12 and resist film 13 are configured to
In the exposure machine 500 of proximity printing, after mutual contraposition is completed, using light source 501 and irradiation system 502, from the 1st
The light of the rear side irradiation ultraviolet radiation of photomask 100 etc., is exposed across transfer pattern 112p to resist film 13, makes to resist
Lose a part of photosensitive (Fig. 1 (c), Fig. 2 (a)) of agent film 13.In exposure, the light source of i lines~g lines can be used.
Then, the 1st photomask 100 is taken out from exposure machine 500 and light screening material film 12 and resist film 13 is formed with
Exposure after Mght-transmitting base material 11.Then, resist film 13 is developed, formation partly covers the against corrosion of photomask
Agent pattern 13p (Fig. 1 (d)).
Then, the Resist patterns 13p using formation is etched as mask to light screening material film 12, in Mght-transmitting base material 11
A main surface on formed black matrix layer 12p (Fig. 1 (e)).After black matrix layer 12p is formd, Resist patterns is removed
13p。
(formation of red filter layer)
Then, it is being formed with a main surface of black matrix layer 12p Mght-transmitting base material 11, is being formed for example by photonasty
The red resist film 14 (Fig. 1 (f)) that resin material is constituted.
Then, using the 2nd photomask 200 of red filter layer formation and it is formed with black matrix as transfer printing body
The Mght-transmitting base material 11 of layer 12p and red resist film 14 is configured to (Fig. 1 in the above-mentioned exposure machine 500 of proximity printing
(g))。
In addition, as the planar structure illustrated in Fig. 3 (a), the 2nd photomask 200 possesses transfer pattern 212p
Area of the pattern 233, the transfer is by being processed into photomask on a main surface of transparency carrier 201 with pattern 212p
Formed by predetermined transfer pattern.In addition, transfer pattern 212p's is shaped so as to for forming red filter layer 14p
Shape, be transfer from the 1st photomask 100 with the different shapes of pattern 112p.In addition, in the transparent base of the 2nd photomask 200
On one main surface of plate 201, the relative both sides of periphery on the outside of area of the pattern 233, constituting transparency carrier 201 are each
Near zone in there is the bearing surface 203 that is abutted with the holding member 503 of exposure machine 500 respectively., can in bearing surface 203
It to form photomask, can also expose a main surface of transparency carrier 201.
As shown in Fig. 2 (a), bearing surface 203 is supported from below respectively with the holding member 503 of exposure machine 500, thus makes the
2 photomasks 200 are configured in exposure machine 500 with flat-hand position.Also, the transfer pattern with the 2nd photomask 200
212p is relative with forming the red resist film 14 on Mght-transmitting base material 11, is configured across above-mentioned slight gap.
2nd photomask 200 and the Mght-transmitting base material 11 for being formed with black matrix layer 12p and red resist film 14 are matched somebody with somebody
Put in the exposure machine 500 of proximity printing, after mutual contraposition is completed, using light source 501 and irradiation system 502,
The light of rear side irradiation ultraviolet radiation from the 2nd photomask 200 etc., is carried out across transfer with pattern 212p to red resist film 14
Exposure, makes a part of photosensitive (Fig. 1 (h)) of red resist film 14.
Then, it is saturating after the 2nd photomask 200 is taken out from exposure machine 500 and red resist film 14 is exposed
Photosensitiveness base material 11.Then, red resist film 14 is developed to remove unnecessary red resist film 14, and to residual
Red resist film 14, which is toasted (bake), hardens it, is consequently formed red filter layer 14p (Fig. 1 (i)).
(formation of Green color filter and blue filter layer)
Then, Green color filter 15p and blue filter layer 16p shape is carried out in the same manner as red filter layer 14p formation
Into terminating to form red filter layer 14p on a main surface of the Mght-transmitting base material 11 after being divided by black matrix layer 12p, green
The process (Fig. 1 (j)) of the colour filters such as chromogenic filter layer 15p, blue filter layer 16p.
(formation of ITO electrode)
Although it is not shown, after still, to cover black matrix layer 12p, red filter layer 14p, Green color filter 15p, indigo plant
The mode of the upper surfaces of colour filter such as chromogenic filter layer 16p forms ito film and is used as transparency electrode, so as to terminate the system of colour filter 10
Make.
(2) on pattern transfer printing precision
As described above, when manufacturing colour filter, being filtered using black matrix layer 12p, red filter layer 14p, green is formed with
Layer 15p, blue filter layer 16p photomask etc., carry out the multiexposure, multiple exposure based on proximity printing.It has however been found that following feelings
Condition：When carrying out proximity printing, although the machining accuracy for the transfer pattern that each photomask has is sufficiently high and in base
In quasi- scope, but as the coincidence result of transfer pattern, transfer printing precision may be insufficient.
According to the deep research of inventor etc., distinguish：The deterioration of above-mentioned transfer printing precision be due to it is in each photomask,
Transfer what coordinate changed and produced caused by the little height of area of the pattern changes.Further distinguish：The transfer printing precision it is bad
Change may amplify due to the transfer pattern of overlapping multiple photomasks on transfer printing body, discounting for the situation, sometimes
Influence can be produced on the function of final products.Pattern transfer printing precision deterioration when Fig. 4 is illustrated in lasting progress proximity printing
The schematic diagram of situation, (a) shows the enlarged section for the photomask 100 ' to form black matrix layer, and (b) shows to form red
The enlarged section of the photomask 200 ' of filter layer, (c) shows the situation that pattern is transferred to resist film 13,14.Certainly, this
A little photomasks can also be the photomask for forming other layers.
As shown in Fig. 4 (c), on condition that：The exposure of resist film is irradiated to across photomask 100 ', 200 ' from exposure machine 500
Light light impinges perpendicularly on a main surface of photomask 100 ', 200 '.But, actually the incidence angle can not be excluded completely slightly
Inclined situation, (such as θ) progress that is tilted by a predetermined angle sometimes is incident.In reality, the θ upper limit is 1 degree or so.In above-mentioned feelings
Under condition, the position of the pattern to be transferred to resist film 13,14 is projected with being inclined by, thus with expose light inclination angle theta size
Correspondingly it is horizontally offset from scheduled volume.In Fig. 4 (c), a main table relative to photomask 100 ', 200 ' is shown
The normal slope in face angle, θ incident exposure light, so that the transfer position of pattern has been horizontally offset from S0 situation.
Even if generating above-mentioned transfer deviation, as long as departure S0 is constant in the whole face of resist film 13,14, just
Substantially the deterioration not on transfer printing precision produces influence.But, it can be seen from the deep research of inventor etc.：Departure S0 with it is transparent
The flatness on one main surface of substrate 101 ', 201 ' correspondingly localized variation.And understand：With departure S0 change
It is dynamic, generate the partial deterioration of pattern transfer printing precision.Especially, it was found that following situation：Even if local variation's amount of departure
It is respectively in each photomask monomer in allowed band, but when making pattern overlapping using multiple photomasks successively, if in advance
Variation direction at fixed lap position is different from each other (for example, with inclined at predetermined lap position in the photomask of a side
The mode that residual quantity becomes big is changed, and is carried out in the photomask of the opposing party at above-mentioned position in the way of departure diminishes
Change), then the aggregate-value of variation when overlapping locally exceeds the allowed band of transfer printing precision sometimes.
Fig. 4 (a) shows on a main surface of the transparency carrier 101 ' in transfer pattern 112p ' there is depth Zm
Recessed structure photomask 100 ' enlarged section.When having carried out proximity printing using this photomask 100 ', such as Fig. 4
(c) shown in, the transfer formed in recessed structure uses pattern 112p ' height and position (Z location) to be used with the transfer of other flat sites
Pattern 112p ' height and position (Z location) is compared, and maximum (at M points) is higher by Zm.As a result, because exposure light has tilted angle, θ
It is local to become big (S1 ＞ S0) and the departure S1 of the recessed structure division produced is compared with the departure S0 of above-mentioned flat part.
On the other hand, Fig. 4 (b) is shown on a main surface of the transparency carrier 201 ' in transfer pattern 212p '
In the presence of the enlarged section of the 2nd photomask 200 ' of height Zn male structure.As shown in Fig. 4 (c), covered using this 2nd light
When mould 200 ' has carried out proximity printing, the transfer formed in male structure use pattern 212p ' height and position (Z location) and other
The transfer of flat site is compared with pattern 212p ' height and position (Z location), maximum (at N points) low Zn.As a result, because exposing
The departure S2 for the male structure part that light light has tilted angle, θ and produced is local to become compared with the departure S0 of above-mentioned flat part
Small (S2 ＜ S0).
In addition, the deterioration of above-mentioned pattern transfer printing precision is produced in 1 proximity printing for be used alone 1 photomask
Raw problem, but it can be seen from the deep research of inventor etc.：Especially it is being transferred successively using multiple photomasks to same
When body carries out proximity printing, departure S0 variation can bring bigger influence, and pattern transfer printing precision is made sometimes more
Ground is deteriorated.That is, for example shown in Fig. 4 (c), it is being present in the recessed structure of the 1st photomask 100 ' with being present in the convex of photomask 200 '
In the case that structure is overlapping on the vertical axis, by lasting carry out proximity printing, the black matrix layer at the part of concaveconvex structure
Can be produced in local maxima with the coordinate position of the transfer pattern of red filter layer | S1-S2 | (=|-Zm- (+Zn) |
Tan θ) deviation.That is, it is overlapping using transfer pattern constituting even if being in as the coordinate precision of independent photomask in benchmark
Photomask group (photomask set) photomask in, it is also necessary to consider that above-mentioned key element is processed and selected.In addition, can
Know：Base board for optical mask for that can manufacture the photomask for constituting photomask group, needs progress tighter in terms of its flatness
The evaluation of lattice.
The result that inventor etc. is studied deeply is to have obtained following opinion：When carrying out proximity printing to improve
The variation in altitude on one main surface of the transparency carrier in pattern transfer printing precision, control area of the pattern is effective.
According to the present embodiment for applying above-mentioned opinion, using a kind of base board for optical mask, it is used on main surface
Form transfer pattern and turn into photomask, in the base board for optical mask, the height of the area of the pattern on the main surface becomes
Dynamic maximum Δ Zmax be 8.5 (μm) below.
That is, using above-mentioned such |-Zm- (+Zn) | the maximum Δ Zmax of area of the pattern be less than 8.5 μm of light
Mask substrate.When this value is exceeded, sometimes, can by with for same transfer printing body carry out overlapping exposures photomask institute
The variation in altitude for the area of the pattern having is combined, causes the grid deviation produced on transfer printing body to exceed allowed band.In addition,
On the allowed band of grid deviation described herein, it will be described later.
The base board for optical mask of present embodiment can the close grinding using transparency carrier and then the selection by substrate come
Obtain.But, when the numerical value of above-mentioned maximum is too small, in the Surface Machining of substrate, sometimes more than the energy of processing unit (plant)
Power needs excessive process time.It is therefore preferable that the maximum Δ Zmax in area of the pattern is more than 1 μm.
On the maximum Δ Zmax of the variation in altitude of area of the pattern, obtained the arbitrfary point in area of the pattern relative to
During the height Z of reference plane, maximum Δ Zmax can be set to the difference of height Z maxima and minima.
In addition, on arbitrfary point, such as can determine and benchmark as follows.That is, predetermined be separated by will can be separated
The point being equally spaced set in apart from P in the area of the pattern is set to arbitrfary point.For example, in the base board for optical mask
In area of the pattern, with predetermined standoff distance P (being preferably more than 5mm below 15mm, for example, 10mm) interval along XY directions
Depict lattice points all during grid, when their height Z is set into measuring point, can by height Z maxima and minima it
Difference is set to maximum Δ Zmax.
Herein, as described later, flatness measuring machine can be used to be measured for height Z, and the benchmark of device defined can be used
Obtain height Z in face.In addition, determine area of the pattern each point at height Z when, it is preferred that make base board for optical mask lead
It is measured under the straight situation so as to substantially eliminate the flexure effects caused by the deadweight.
Flatness control based on this base board for optical mask, with advantages below.
The device pattern (device pattern) of liquid crystal display device constantly granular.For for the black of colour filter
Matrix (BM), the expectation of graph thinning is especially strong.Conventional 10 μm or so with regard to most recently 8 μm to be achieved or 6 μm of enough BM width
Left and right, the difficulty of manufacturing technology further increases.
For example, it is contemplated that to form 6 μm of BM situation (Fig. 7 (a)).When color version is overlapping with BM, a side (such as BM.
It is same below) allow grid deviation maximum be 3 μm (Fig. 7 (b)).Because, when color version each other (such as red (red)
With blue (blue)) border when exceeding BM width, the problems such as muddy stain being produced.Also, deposited when considering color version itself
When linewidth error and BM itself have linewidth error, the grid deviation of a side is necessary for (3 1/2 × 1/2=of μ m) 0.75 μ
Within m (Fig. 7 (c)).
In addition, the description repeatability that drawing apparatus has is 0.15 μm or so, therefore, the allowance of photomask base plate side
(margin) it is 0.60 μm of (0.75-0.15=).This is the permissible value (Fig. 7 (d)) of grid deviation caused by photomask.
But, grid deviation caused by base board for optical mask will be because not only including the flatness on the main surface of photomask
(variation in altitude) this factor.According to the research of inventor, there are Multiple factors, (can not ignore as non-accidental factor
Factor), in addition to following key element：Transfer is schemed caused by the holding member 503 of exposure machine 500 and the abutting of photomask
The deformation of case；The shape of the 2nd main surface (back side) corresponding with area of the pattern.Herein, the shape on the 2nd main surface is schemed with transfer
The grid deviation produced during the description of case is relevant, therefore can not ignore.
Therefore, admissible grid deviation amount is allocated in above-mentioned 3 main factors (Fig. 7 (e)), and in order to meet
Cpk (process capability index) 1.3, tolerance amount is necessary in single-piece photomask caused by the variation in altitude of area of the pattern
(therefore, because the departure that the combination of two photomasks is produced is within 0.3 μm) (Fig. 4 (c) S1-S2) within 0.15 μm.
As described above, departure is [Δ Zmaxtan θ], the θ upper limit is 1 degree, therefore
ΔZmax·tanθ≦0.15(μm)
So, Δ Zmax≤8.59 (deg),
As the maximum Δ Zmax of variation in altitude, as long as being used as benchmark using less than 8.5 μm, it becomes possible to which the key element is caused
Grid deviation be suppressed to and do not influence the degree of BM performances.
In addition, it is further preferred that the maximum Δ Zmax of the variation in altitude of area of the pattern be 7.5 (μm) below.Now, energy
Enough supplement black matrix line width is the coordinate precision of 5.5 μm or so of liquid crystal display device of lower generation.
It can separate predetermined standoff distance P in the area of the pattern on main surface and equally spaced set multiple measuring points.This reality
Coordinate precision deterioration when the main purpose for applying mode is to suppress to transfer caused by face shape uneven in area of the pattern, when
When the standoff distance of measuring point is excessive, the precise decreasing of obtained variation in altitude value.But, the transparency carrier of photomask is in warp
In the stage crossed after precise finiss, cycle less bumps are eliminated, therefore, surveyed by being set with more than 5mm standoff distance
Fixed point, can obtain sufficient variation in altitude characteristic (profile).Specifically, the standoff distance of measuring point can be set to 5≤P
≦15(mm).For example, it is preferable to which the lattice point of the grid of 10mm width is set into measuring point.
(3) manufacture method of photomask
Hereinafter, reference picture 5, Fig. 6 are illustrated to the manufacture method of the photomask of present embodiment.Fig. 5 is to illustrate this reality
Apply the flow chart of the manufacturing process of the photomask of mode.Fig. 6 is showing for the situation that illustration determines flatness by incident laser
It is intended to.In addition, in the following description, to be illustrated in case of the 1st photomask 100 for manufacturing black matrix formation, no
Cross, the manufacture of the 2nd~the 4th photomask of filter layer formation can be also carried out in the same manner as the manufacture of the 1st photomask 100.
(preparation of transparency carrier and the inspection of flatness)
First, the transparency carrier 101 (Fig. 5 (a)) as base board for optical mask is prepared.In addition, as also illustrated in Fig. 3 (a)
As, transparency carrier 101 can be for example set to for rectangular tabular, its size when overlooking：Long side L1 is 600~1400
(mm), short side L2 is that 500~1300 (mm), thickness T are 6~13 (mm) left and right.Transparency carrier 101 for example can be by quartz (SiO2)
Glass or include SiO2、Al2O3、B2O3、RO、R2O etc. low-expansion glass etc. is constituted.In a main table of transparency carrier 101
On face, above-mentioned transfer pattern 112p formation presumptive area is provided with.In addition, in transfer pattern 112p formation fate
The outside in domain, on the relative both sides (being in the present embodiment long side L1) in the periphery for constituting transparency carrier 101 each
Vicinity bearing surface 103 on, abutted with the holding member 503 of exposure machine 500.
The interarea (front and back) of transparency carrier 101 is respectively structured as flat and smooth by being ground.As above
It is described, on the flatness on a main surface of transparency carrier 101, so that the maximum Δ Zmax of the variation in altitude of area of the pattern
Mode as 8.5 (μm) below carries out precise finiss.Or, selection meets the transparency carrier of the benchmark as transparency carrier
101。
The measure of flatness is carried out as follows.In order to obtain the maximum Δ Zmax of variation in altitude, each measuring point is determined
Height Z.When setting multiple measuring points on main surface, the height Z of each point is the distance between each measuring point and reference plane.
In addition, deviation is exactly above-mentioned variation in altitude in height Z face.For example, using flatness analyzer determine it is above-mentioned apart from when,
The reference plane that the analyzer has can be set to said reference face.For example, as shown in fig. 6, one into supporting zone can be used
Method of individual main surface incident laser etc. is checked.The flatness measuring machine of Hei Tian Seiko company manufacture for example can be used
The device that FFT-1500 (registration mark) or Japanese Unexamined Patent Publication 2007-46946 publications are recorded is measured.
Exemplified with the characteristic of the variation in altitude in thus obtained, base board for optical mask area of the pattern in Fig. 8.
As measuring point, as described above, in the entirety of area of the pattern, it (is preferably more than 5mm to set standoff distance P
Below 15mm, for example, 10mm) interval lattice point, obtain the height Z of all measuring points.Also, obtain variation in altitude most
Big value Δ Zmax.Now, if only combination Δ Zmax is exposed for less than 8.5 μm of photomask to same transfer printing body, scheme
Coordinate precision deterioration is substantially without as problem caused by the variation in altitude in case region.On the other hand, even in more than 8.5 μm
In the case of, if the state of the variation in altitude of other photomasks used in combination is identical, it can also act as mask set.Close
It will be described later in this point.
(formation of photomask and resist film)
Then, the photomask 112 (Fig. 5 (b)) for example by principal component of Cr is formed on the main surface of transparency carrier 101.
Photomask 112 such as can by sputtering (sputtering) or vacuum evaporation method formed.The thickness of photomask 112 is to be enough
The thickness of the irradiation light of exposure machine 500 is blocked, for example, can be set to 90~140nm or so.It is further preferred, that in photomask 112
Upper surface form antireflection layer such as with CrO for principal component.Hidden in addition it is also possible to be formed not on bearing surface 103
Light film 112.
Then, resist film 113 (Fig. 5 (b)) is formed on photomask 112.Resist film 113 can be by just (positive)
Property photo anti-corrosion agent material or negative (negative) property photo anti-corrosion agent material constitute.In the following description, if resist film 113
Formed by positive photoresist material.Resist film 113 can for example be applied by rotary coating (spin coating) or slit
The methods such as cloth (slit coating) are formed.
(patterning step)
Then, description exposure is carried out to resist film 113 using laser description machine etc., makes a part for resist film 113
It is photosensitive.Afterwards, providing developer solution to resist film 113 using methods such as spraying (spray) modes makes it develop, and forms covering and hides
The Resist patterns 113p (Fig. 5 (c)) of a part for light film 112.
Then, a part for photomask 112 is etched using the Resist patterns of formation as mask.Photomask 112
Etching chromium (chrome) can be provided on photomask 112 with etching solution by using methods such as spraying methods and carried out.Its
As a result, on a main surface of transparency carrier 101, formed to the transfer that photomask 112 is patterned pattern 112p
(Fig. 5 (d)).Then, remove Resist patterns 113p and terminate the manufacture (Fig. 5 (e)) of the 1st photomask 100.
In addition it is also possible to carry out the measure of above-mentioned flatness after photomask is formed.Method can be same as described above.
<Another embodiment of the present invention>
In the above-described embodiment, illustrate using meet the maximum Δ Zmax of variation in altitude for 8.5 (μm) below this
The situation of the base board for optical mask of one important document.But, the invention is not restricted to above-mentioned embodiment, it light as described below can be used to cover
Mould substrate in batch.
That is, following base board for optical mask group can be used,
The base board for optical mask group has：1st base board for optical mask, it is used to being formed on main surface to be transferred to being turned
Print the transfer pattern of body and turn into the 1st photomask；And the 2nd base board for optical mask, its be used to be formed on main surface treat with
The transfer pattern of the transfer printing body is transferred to the transfer pattern overlapping and turns into the 2nd photomask, in the photomask
With in substrate in batch,
When the arbitrary point M set in the area of the pattern on the main surface for setting the 1st base board for optical mask is relative to base
The height in quasi- face is Zm,
If it is in the area of the pattern on the main surface of the 2nd base board for optical mask, in the 1st photomask base
The point N at the corresponding positions of point M on plate is Zn relative to the height of the reference plane,
And when having obtained the Zm and Zn difference Zd,
In the area of the pattern, the maximum Δ Zdmax of the Zd for 17 (μm) below.
Thereby, it is possible to manufacture excellent liquid crystal display device of coordinate precision etc..That is, in base board for optical mask monomer
" the maximum Δ Zmax of variation in altitude be 8.5 (μm) below " this benchmark is unsatisfactory for, but in the group of multiple base board for optical mask
When having obtained the characteristic of above-mentioned variation in altitude, i.e. met in the multiple variation in altitude state identical base board for optical mask of combination
" as the variation in altitude maximum Δ Zdmax of group for 17 (μm) below " this benchmark when, these photomasks can also be used
Substrate is used as the base board for optical mask group of the overlapping pattern on same transfer printing body well.
For example shown in Fig. 9, for will on same transfer printing body overlapping transfer pattern and the 1st photomask that is exposed
100 ' with substrate and the 2nd substrate of photomask 200 ', except at least any one party meets " the maximum Δ Zmax of variation in altitude
For 8.5 (μm) below " beyond the situation of this benchmark, such as when both pattern planes are spill, it can will be used as these light
Mask is set to less than 17 μm with the variation in altitude maximum Δ Zdmax of the group of substrate.This is the variation in altitude based on area of the pattern
Caused tolerance amount is that (what is therefore, produced by the combination of two photomasks is inclined within 0.15 μm in single-piece photomask
Residual quantity is within 0.3 μm) this described above sets up (Fig. 4 (c) S1-S2).That is, if it is known that groups of other side solely covers
The flatness characteristic of mould, then be also allowed even if the variation in altitude maximum Δ Zmax of each photomask more than 8.5 μm.By
This, can relax the requirement benchmark of the flatness in base board for optical mask monomer, can reduce the production cost of photomask, without
Deteriorate coordinate precision.
In addition, in the above description, so-called same transfer printing body refers to be laminated being transferred for the film to be patterned
Body or the transfer printing body being laminated during composition, are that the transfer pattern that each photomask has is aligned
And the object overlappingly transferred successively.For example, by the photomask of overlapping black matrix and color version successively to transfer printing body
Transferred to manufacture colour filter, or, transferred by further overlapping film transistor with photomask to transfer printing body
To manufacture liquid crystal display device.In addition, transfer printing body is also comprising the state for being coated with the resist film as composition mask
Transfer printing body.
The 1st photomask 100 ' that base board for optical mask group is constituted on obtaining uses substrate with substrate and the 2nd photomask 200 '
Between difference in height (Zd=|-Zm- (- Zn) |) maximum Δ Zdmax method, can be with same as mentioned above.
That is, in the 1st photomask 100 ' with setting multiple measuring point M1, M2, M3 on substrate.In the 1st photomask
100 ' with the area of the pattern on substrate, equally spaced setting multiple measuring point M1.For example, can be set in the pattern
In region, at a predetermined interval (such as 10mm) along XY directions depict grid when lattice point.Also, for M1, M2,
M3, obtains the value of height Zm1, Zm2, Zm3 relative to reference plane.On the other hand, in the 2nd photomask 200 '
With in substrate, be also similarly, set at position corresponding with substrate with the 1st photomask 100 ' lattice point N1, N2,
During N3, these height Zn1, Zn2, Zn3 relative to reference plane are obtained.Also, can be according in correspondence
The difference in height (Zd=|-Zm- (- Zn) |) of two substrates of position obtain maximum Δ Zdmax.
In addition, in the photomask group for forming transfer pattern respectively on these base board for optical mask and being made, can also carry out
It is similar to the above to evaluate.Therefore, the present invention is same with present embodiment, and photomask group as described below can be used.
That is, following photomask group can be used,
The photomask group has：1st photomask, it is formed with the transfer to be transferred to transfer printing body on main surface and schemed
Case；And the 2nd photomask, it is formed on main surface needs to be transferred to the transfer printing body with the transfer pattern overlapping
Transfer pattern, in the photomask group,
When the arbitrary point M set in the area of the pattern on the main surface for setting the 1st photomask is relative to reference plane
Highly it is Zm,
If it is in the area of the pattern on the main surface of the 2nd photomask, in M pairs of point on the 1st photomask
Point N at the position answered is Zn relative to the height of the reference plane,
And when having obtained the Zm and Zn difference Zd,
In the area of the pattern, the maximum Δ Zdmax of Zd variation for 17 (μm) below.
In addition, in above-mentioned base board for optical mask group and photomask group, more preferably Δ Zdmax be 15 (μm) below.
Also, it in the present embodiment, can implement to have used the printing transferring method of the group of these photomasks.That is, using close
The transfer pattern overlapping that the transfer pattern and the 2nd photomask that the exposure machine of formula exposure has the 1st photomask have
It is transferred to same transfer printing body.Thereby, it is possible to obtain the electronic devices such as the excellent liquid crystal display device of coordinate precision.
<The other embodiment of the present invention>
More than, embodiments of the present invention are illustrated, but the invention is not restricted to above-mentioned embodiment, can be
Do not depart from and carry out various changes in the range of its purport.
For example, black matrix layer 12p is not limited to using metal materials such as Cr as principal component, can also be by with the photosensitive of light-proofness
Property resin etc. formed.In the case of using photoresist, black matrix layer 12p can be as colour filter, by implementing successively
Expose, develop, toast to be formed.
Also, in the above-described embodiment, illustrate using the clear glass base that quartz etc. is ground and produced
Plate is as the situation of base board for optical mask, but the invention is not restricted to aforesaid way.For example, as base board for optical mask, using
The photomask blank for any one party being formed with the transparent glass substrate in optical film and resist etc. has been used
In the case of photo mask midbody formed on the photomask in the process of predetermined transfer pattern etc., also it is very suitable for using this
Invention.
In accordance with the invention it is possible to before transfer is formed with pattern, be used for overlapping turn according to the Phase Evaluation of transparency carrier
The transfer performance of each base board for optical mask of print.Furthermore it is possible to according to the analysis of the variation in altitude of area of the pattern, respectively using each
There is provided the advantage in batch production for the performance evaluation of the performance evaluation of individual photomask and the photomask group being applied in combination
(advantage).The advantage is not limited to colour filter, can be using the product of proximity printing in thin film transistor (TFT) and organic EL etc.
It is also useful in manufacture.
Claims (7)
1. a kind of base board for optical mask group, it has：
1st base board for optical mask, it is used to form the transfer pattern to be transferred to transfer printing body on main surface and turn into the 1st
Photomask；And
2nd base board for optical mask, it, which is used to be formed on main surface, treats to be transferred to the quilt with the transfer pattern overlapping
The transfer pattern of transfer article and as the 2nd photomask,
The base board for optical mask group is characterised by,
When the arbitrary point M set in the area of the pattern on the main surface for setting the 1st base board for optical mask is relative to reference plane
Height be Zm,
If in the area of the pattern on the main surface of the 2nd base board for optical mask be in on the 1st base board for optical mask
The corresponding positions of point M at point N relative to the reference plane height be Zn,
And when having obtained the Zm and Zn difference Zd,
In the area of the pattern, the maximum Δ Zdmax of the Zd is less than 17 μm.
2. base board for optical mask group according to claim 1, it is characterised in that
The base board for optical mask group is used for proximity printing.
3. base board for optical mask group according to claim 1, it is characterised in that
The base board for optical mask group is formed with optical film on the glass substrate.
4. a kind of photomask group, it has：
1st photomask, it is formed with the transfer pattern to be transferred to transfer printing body on main surface；And
2nd photomask, it is formed on main surface needs to be transferred to the transfer printing body with the transfer pattern overlapping
Transfer pattern,
The photomask group is characterised by,
When height of the arbitrary point M relative to reference plane set in the area of the pattern on the main surface for setting the 1st photomask
For Zm,
If being in position corresponding with the point M on the 1st photomask in the area of the pattern on the main surface of the 2nd photomask
It is Zn that the point N at place, which is put, relative to the height of the reference plane,
And when having obtained the Zm and Zn difference Zd,
In the area of the pattern, the maximum Δ Zdmax of the Zd is less than 17 μm.
5. photomask group according to claim 4, it is characterised in that
The photomask group is used for proximity printing.
6. photomask group according to claim 4, it is characterised in that
The photomask group has colour filter manufacture pattern in the area of the pattern.
7. a kind of manufacture method of display device, it is characterised in that comprise the following steps：
Prepare the 1st photomask and the 2nd photomask described in claim 4；And
The transfer pattern that there is the 1st photomask using the exposure machine of proximity printing and the 2nd photomask tool
It is transferred to same transfer printing body some transfer pattern overlappings.
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| JP2011088781 | 2011-04-13 | ||
| JP2011-088781 | 2011-04-13 | ||
| CN201210106982.3A CN102736397B (en) | 2011-04-13 | 2012-04-12 | Photomask substrate, photomask, photomask substrate set, photomask set, method for manufacturing photomask and pattern transfer method |
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| CN201210106982.3A Active CN102736397B (en) | 2011-04-13 | 2012-04-12 | Photomask substrate, photomask, photomask substrate set, photomask set, method for manufacturing photomask and pattern transfer method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001203160A (en) * | 2000-12-11 | 2001-07-27 | Sony Corp | Manufacturing method of semiconductor device |
| CN1862376A (en) * | 2005-02-25 | 2006-11-15 | Hoya株式会社 | Mask blank transparent substrate manufacturing method, mask blank manufacturing method, and exposure mask manufacturing method |
| CN101006021A (en) * | 2005-06-17 | 2007-07-25 | 信越化学工业株式会社 | Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method |
| JP2009037203A (en) * | 2007-07-12 | 2009-02-19 | Hoya Corp | Method for forming pattern, method for manufacturing thin film transistor substrate, method for manufacturing liquid crystal display device, and photomask |
| JP2010078769A (en) * | 2008-09-25 | 2010-04-08 | Shin-Etsu Chemical Co Ltd | Selecting method and manufacturing method for photomask blanks, and manufacturing method for photomask |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3627805B2 (en) * | 2001-04-20 | 2005-03-09 | 信越化学工業株式会社 | Glass substrate for photomask and method for producing the same |
| TWI329779B (en) * | 2003-07-25 | 2010-09-01 | Shinetsu Chemical Co | Photomask blank substrate, photomask blank and photomask |
| JP4340859B2 (en) | 2003-07-25 | 2009-10-07 | 信越化学工業株式会社 | Photomask blank substrate selection method |
| TW200540565A (en) * | 2004-06-08 | 2005-12-16 | Sumitomo Chemical Co | Photosensitive resin composition |
| JP4803576B2 (en) * | 2004-09-29 | 2011-10-26 | Ｈｏｙａ株式会社 | Mask blank substrate, mask blank, exposure mask, semiconductor device manufacturing method, and mask blank substrate manufacturing method |
| DE102005046135B4 (en) * | 2004-09-29 | 2017-04-13 | Hoya Corp. | Substrate for mask blank, mask blank, exposure mask, and mask blank substrate manufacturing method |
| US7608542B2 (en) * | 2005-06-17 | 2009-10-27 | Shin-Etsu Chemical Co., Ltd. | Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method |
| JP5335351B2 (en) * | 2008-10-01 | 2013-11-06 | Ｈｏｙａ株式会社 | Mask blank substrate set, mask blank set, photomask set, and semiconductor device manufacturing method |
| JP5331638B2 (en) * | 2008-11-04 | 2013-10-30 | Ｈｏｙａ株式会社 | Photomask manufacturing method and drawing apparatus for display device manufacturing |
| WO2010061828A1 (en) * | 2008-11-26 | 2010-06-03 | Hoya株式会社 | Mask blank substrate |
| JP4853684B2 (en) * | 2009-03-31 | 2012-01-11 | 信越化学工業株式会社 | Photomask blank and photomask |
| KR101270659B1 (en) * | 2009-05-27 | 2013-06-03 | 주식회사 에스앤에스텍 | Substrate for Blank Mask, Blank Mask and Manufacturing Method Thereof |
-
2012
- 2012-04-10 JP JP2012089395A patent/JP5937873B2/en active Active
- 2012-04-12 CN CN201410219079.7A patent/CN103955111B/en active Active
- 2012-04-12 KR KR1020120037814A patent/KR101319800B1/en active IP Right Grant
- 2012-04-12 TW TW101113081A patent/TWI461753B/en active
- 2012-04-12 CN CN201210106982.3A patent/CN102736397B/en active Active
-
2013
- 2013-08-26 KR KR1020130101162A patent/KR101805953B1/en active IP Right Grant
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001203160A (en) * | 2000-12-11 | 2001-07-27 | Sony Corp | Manufacturing method of semiconductor device |
| CN1862376A (en) * | 2005-02-25 | 2006-11-15 | Hoya株式会社 | Mask blank transparent substrate manufacturing method, mask blank manufacturing method, and exposure mask manufacturing method |
| CN101006021A (en) * | 2005-06-17 | 2007-07-25 | 信越化学工业株式会社 | Large-size glass substrate for photomask and making method, computer-readable recording medium, and mother glass exposure method |
| JP2009037203A (en) * | 2007-07-12 | 2009-02-19 | Hoya Corp | Method for forming pattern, method for manufacturing thin film transistor substrate, method for manufacturing liquid crystal display device, and photomask |
| JP2010078769A (en) * | 2008-09-25 | 2010-04-08 | Shin-Etsu Chemical Co Ltd | Selecting method and manufacturing method for photomask blanks, and manufacturing method for photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101805953B1 (en) | 2017-12-06 |
| JP5937873B2 (en) | 2016-06-22 |
| CN102736397B (en) | 2015-04-01 |
| TW201303384A (en) | 2013-01-16 |
| KR20120116875A (en) | 2012-10-23 |
| KR20130103470A (en) | 2013-09-23 |
| TWI461753B (en) | 2014-11-21 |
| KR101319800B1 (en) | 2013-10-17 |
| CN103955111A (en) | 2014-07-30 |
| JP2012230368A (en) | 2012-11-22 |
| CN102736397A (en) | 2012-10-17 |
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