CN103944519A - Bridge type dynamic power source connected into current jetting type audio power amplifier in mated mode - Google Patents
Bridge type dynamic power source connected into current jetting type audio power amplifier in mated mode Download PDFInfo
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Abstract
The invention discloses a bridge type dynamic power source connected into a current jetting type audio power amplifier in a mated mode. The bridge type dynamic power source comprises an MOS field effect tube M1, an MOS field effect tube M2, an MOS field effect tube M3, an MOS field effect tube M4, an inductor L1, an inductor L2, a metalized thin-film capacitor C1, a metalized thin-film capacitor C2 and an audio processor module. The audio processor module is provided with nine ADC channels for real-time monitoring and two DAC channels for controlling the working state of the current jetting type audio power amplifier. The bridge type dynamic power source solves the problems that the wasted power of an output power tube of the audio power amplifier is large, and the high dissipation is overcome through parallel connection of multiple pairs of tubes in a traditional circuit. The current jetting type audio power amplifier connected with the bridge type dynamic power source in a mated mode only needs a pair of output tubes with complementary P and N channels, then super-power and high-tone-quality output can be completed, a large amount of cost for the power tubes is saved, and meanwhile the highest power tube pairing process needed by a traditional power amplifier during production is omitted. By means of the audio power amplifier, the heating amount is low, and the energy-saving effect is obvious.
Description
Technical field
The invention belongs to audio-frequency power amplifier technical field, be specifically related to a kind of bridge-type dynamic power supplies of supporting access electric current injecting type audio-frequency power amplifier.
Background technology
At present traditional its schematic diagram of audio-frequency power amplifier as shown in Figure 1, for ensureing the low distortion of voltage amplification, foregoing circuit has adopted cascode circuit differential amplification form, audio signal through rhombus difference channel amplify and anti-phase after, obtain the needed level in the second level and impedance matching with second level voltage amplifier stage direct-coupling, second level voltage amplifier stage is through anti-phase amplification acquisition high voltage amplitude of oscillation rear drive third level electric current amplifying stage work again, signal is after third level electric current amplifying stage 0dB voltage gain amplifies, driving load output, offset signal errors by the large loop negative feedback of difference, reach the object of low distortion output.
But above-mentioned conventional audio power amplifier has the following disadvantages: 1, bandwidth is low, bandwidth of operation is 50KHz-1dB left and right, this bandwidth is for seem very narrow of 20KHz tonal range, cause audio frequency high band TIM distortion large, and high band easily produces self-excitation, need to add capacitor C 1, capacitor C 2, resistance R 22, capacitor C 3 to eliminate the self-excitation of ring formula; 2, distortion is large, grounded emitter circuit through the anti-phase amplification of two-stage can not obtain the feedback signal of mating completely with input signal phase place, the anti-phase rear phase place of two-stage starts to occur deviation, and the higher phase distortion of operating frequency is larger, and the transient intermodulation being caused by large loop feedback adds huge; 3, signal to noise ratio is low, and voltage signal is by the amplification of tens times, and voltage swing is up to tens volts, and signal noise also will synchronously be amplified, and has limited signal to noise ratio raising; 4, dynamically little; 5, channel separation is poor; 6, circuit structure complexity and components and parts pairing technology difficulty are large.
The technical problem existing for solving above-mentioned conventional audio power amplifier, now proposes a kind of electric current injecting type audio-frequency power amplifier, and its circuit topology schematic diagram as shown in Figure 3.But because traditional power supply with the supporting access of audio-frequency power amplifier generally all adopts Industrial Frequency Transformer to add full-bridge type diode rectifier circuit, as Fig. 2, and use big capacity electrolyte capacitor filtering, its output voltage immobilizes, cannot change according to the working condition requirement of booster output pipe, this causes booster output pipe to be always operating under higher Vce or Vds operating mode, high Vce voltage makes the dissipation power of booster output pipe high, caloric value is very large, therefore developed a kind of supporting bridge-type dynamic power supplies for mating above-mentioned electric current injecting type audio-frequency power amplifier.
Summary of the invention
For the deficiencies in the prior art, the present invention aims to provide that a kind of power output is high, dissipation power is little, it is low to generate heat and can be according to the bridge-type dynamic power supplies of the supporting access electric current injecting type audio-frequency power amplifier of the power tube drain electrode of booster output pipe working condition requirement intelligence resonance-amplifier or collector voltage.
For achieving the above object, the present invention adopts following technical scheme:
The bridge-type dynamic power supplies of supporting access electric current injecting type audio-frequency power amplifier, comprise metal-oxide-semiconductor field effect transistor M1, metal-oxide-semiconductor field effect transistor M2, metal-oxide-semiconductor field effect transistor M3, metal-oxide-semiconductor field effect transistor M4, inductor L1, inductor L2, metallized film capacitor C1, metallized film capacitor C2 and audio processor module, described metal-oxide-semiconductor field effect transistor M1 grid meets the pulse-width modulation drive output SPWM1_N of audio processor module, the source electrode of metal-oxide-semiconductor field effect transistor M1 connects the drain electrode of metal-oxide-semiconductor field effect transistor M2 and one end of inductor L1, and the drain electrode of metal-oxide-semiconductor field effect transistor M1 meets power supply+Vdd; Metal-oxide-semiconductor field effect transistor M2 grid meets the pulse-width modulation drive output SPWM1_P of audio processor module, metal-oxide-semiconductor field effect transistor M2 source electrode meets power supply-Vss, metal-oxide-semiconductor field effect transistor M2 drain electrode connects one end of metal-oxide-semiconductor field effect transistor M1 source electrode and inductor L1, another termination metallized film capacitor C1 of inductor L1 and metal-oxide-semiconductor field effect transistor Q1 drain electrode; Metal-oxide-semiconductor field effect transistor M3 grid meets the pulse-width modulation drive output SPWM2_N of audio processor module, and the source electrode of metal-oxide-semiconductor field effect transistor M3 connects the drain electrode of metal-oxide-semiconductor field effect transistor M4 and one end of inductor L2, and metal-oxide-semiconductor field effect transistor M3 drain electrode meets power supply+Vdd; Metal-oxide-semiconductor field effect transistor M4 grid meets the pulse-width modulation drive output SPWM2_P of audio processor module, metal-oxide-semiconductor field effect transistor M4 source electrode meets power supply-Vss, metal-oxide-semiconductor field effect transistor M4 drain electrode connects one end of metal-oxide-semiconductor field effect transistor M3 source electrode and inductor L2, another termination metallized film capacitor C2 of inductor L2 and metal-oxide-semiconductor field effect transistor Q2 drain electrode;
Described audio processor module be provided with 9 ADC passages for real time monitoring and 2 DAC passages for controlling the operating state of electric current injecting type power amplifier, above-mentioned 9 ADC passages are respectively ADC1, ADC2, ADC3, ADC4, ADC5, ADC6, ADC7, ADC8 and ADC9, and above-mentioned 2 DAC passages are respectively DAC1 passage and DAC2 passage, audio processor module ADC1 connects metal-oxide-semiconductor field effect transistor Q1 drain electrode and is used for monitoring metal-oxide-semiconductor field effect transistor Q1 drain voltage, audio processor module ADC4 connects metal-oxide-semiconductor field effect transistor Q2 drain electrode and is used for monitoring metal-oxide-semiconductor field effect transistor Q2 drain voltage, audio processor module ADC2 connects metal-oxide-semiconductor field effect transistor Q1 source electrode for monitoring the Ids electric current of metal-oxide-semiconductor field effect transistor Q1, audio processor module ADC3 connects metal-oxide-semiconductor field effect transistor Q2 source electrode for monitoring the Ids electric current of metal-oxide-semiconductor field effect transistor Q2, audio processor module ADC5 and ADC6 are respectively used to survey metal-oxide-semiconductor field effect transistor Q1 and metal-oxide-semiconductor field effect transistor Q2 junction temperature Tj, audio processor module DAC1 according to demanded power output, adjusts the dynamic bias of metal-oxide-semiconductor field effect transistor Q1, metal-oxide-semiconductor field effect transistor Q2 by audio process in real time, makes power tube Q1, Q2 always in optimum condition.Audio processor module DAC2 is the midpoint potential for the output of power ratio control amplifier by audio process output.
The present invention has following beneficial effect:
The bridge-type dynamic power supplies of the supporting access electric current of the present invention injecting type audio-frequency power amplifier, solve multipair pipe parallel connection in the large and traditional circuit of audio frequency amplifier power output pipe dissipation power and solved the high drawback dissipating, the electric current injecting type audio-frequency power amplifier that uses this power supply in reality test only a pair of efferent duct just can be exported the power of 2000W, only need a pair of P with the supporting electric current injecting type audio-frequency power amplifier being connected of bridge-type dynamic power supplies of the present invention, the efferent duct of N raceway groove complementation just can complete super high power, high tone quality output, when a large amount of saving power pipe cost, reduce or remit traditional power amplifier and in the time producing, required the highest power tube pairing technique, audio-frequency power amplifier dissipation power is reduced greatly, complete machine temperature rise reduces.
Brief description of the drawings
Fig. 1 is conventional audio power amplifier circuit topology diagram;
Fig. 2 is the power circuit diagram of supporting access conventional audio power amplifier;
Fig. 3 is the circuit topological structure figure of electric current injecting type audio-frequency power amplifier;
Fig. 4 is the circuit diagram that the bridge-type dynamic power supplies of the supporting access electric current of the present invention injecting type audio-frequency power amplifier is connected with electric current injecting type audio-frequency power amplifier.
Embodiment
Below in conjunction with drawings and the specific embodiments, the invention will be further described, understands the claimed technological thought of the present invention so that clearer.
Be illustrated in figure 3 electric current injecting type audio-frequency power amplifier, comprise input, resistance R 0, resistance R 1, resistance R 2, resistance R 3, resistance R 4, resistance R 5, resistance R 6, resistance R 7, resistance R 8, resistance R 9, resistance R 10, resistance R 11, capacitor C 1, capacitor C 2, LED 1, LED 2, electric capacity E1, triode N1, triode P1, triode N2, triode P2, triode N3, triode P3, metal-oxide-semiconductor field effect transistor Q1, metal-oxide-semiconductor field effect transistor Q2, load resistance RL and output, described input two terminals contact resistance R0 and signal ground two ends respectively, resistance R 1 one termination R0, another termination output, resistance R 2 one end contact resistance R0 and resistance R 1 respectively, another termination output ground, technotron J1, technotron J2 is connected into N, the complementary common source output circuit structure of P raceway groove, its source electrode is by resistance R 3 connecting triode N2 emitter and triode P2 emitter respectively, above-mentioned triode N2, triode P2 is connected into complementary common-base circuit, triode N2 base stage is contact resistance R6 respectively, resistance R 8 and electrochemical capacitor E1 positive pole, triode P2 base stage is contact resistance R7 one end respectively, electrochemical capacitor E1 negative pole and resistance R 8 other ends, triode P1, LED 1, resistance R 4 and triode N1, LED 2, resistance R 5 is connected into respectively laterally zygomorphic two constant-current sources, described triode P1 emitter connecting resistance R4 one end, R4 other end sending and receiving optical diode LED1 anode and 12V positive source, LED 1 negative electrode connects triode P1 base stage and technotron J1 drain electrode, described triode N1 emitter connecting resistance R5 one end, resistance R 5 other end sending and receiving optical diode LED2 negative electrode and 12V power cathodes, LED 2 anodes connect triode N1 base stage and technotron J2 drain electrode, triode P1 collector electrode is connecting triode N2 collector electrode and triode N3 base stage respectively, triode N1 collector electrode is connecting triode P2 collector electrode and triode P3 base stage respectively, resistance R 9 one end connect respectively R6 one end, triode N3 emitter and metal-oxide-semiconductor field effect transistor Q1 grid, resistance R 9 other ends connect respectively R7 one end, triode P3 emitter and metal-oxide-semiconductor field effect transistor Q2 grid, metal-oxide-semiconductor field effect transistor Q1 source series contact resistance R10, metal-oxide-semiconductor field effect transistor Q2 source series contact resistance R11, resistance R 10 and resistance R 11 other end parallel connections are as output, amplifier in signal ground is connected in parallel on described output, forms with reference to ground floating structure, and input end signal source can connect the output of current mode digital analog converter or audio frequency input isolating transformer.
As shown in Figure 4, bridge-type dynamic power supplies of the present invention accesses above-mentioned electric current injecting type audio-frequency power amplifier, bridge-type dynamic power supplies comprises metal-oxide-semiconductor field effect transistor M1, metal-oxide-semiconductor field effect transistor M2, metal-oxide-semiconductor field effect transistor M3, metal-oxide-semiconductor field effect transistor M4, inductor L1, inductor L2, metallized film capacitor C1, metallized film capacitor C2 and audio processor module, described metal-oxide-semiconductor field effect transistor M1 grid meets the pulse-width modulation drive output SPWM1_N of audio processor module, the source electrode of metal-oxide-semiconductor field effect transistor M1 connects the drain electrode of metal-oxide-semiconductor field effect transistor M2 and one end of inductor L1, the drain electrode of metal-oxide-semiconductor field effect transistor M1 meets power supply+Vdd, metal-oxide-semiconductor field effect transistor M2 grid meets the pulse-width modulation drive output SPWM1_P of audio processor module, metal-oxide-semiconductor field effect transistor M2 source electrode meets power supply-Vss, metal-oxide-semiconductor field effect transistor M2 drain electrode connects one end of metal-oxide-semiconductor field effect transistor M1 source electrode and inductor L1, another termination metallized film capacitor C1 of inductor L1 and metal-oxide-semiconductor field effect transistor Q1 drain electrode, metal-oxide-semiconductor field effect transistor M3 grid meets the pulse-width modulation drive output SPWM2_N of audio processor module, and the source electrode of metal-oxide-semiconductor field effect transistor M3 connects the drain electrode of metal-oxide-semiconductor field effect transistor M4 and one end of inductor L2, and metal-oxide-semiconductor field effect transistor M3 drain electrode meets power supply+Vdd, metal-oxide-semiconductor field effect transistor M4 grid meets the pulse-width modulation drive output SPWM2_P of audio processor module, metal-oxide-semiconductor field effect transistor M4 source electrode meets power supply-Vss, metal-oxide-semiconductor field effect transistor M4 drain electrode connects one end of metal-oxide-semiconductor field effect transistor M3 source electrode and inductor L2, another termination metallized film capacitor C2 of inductor L2 and metal-oxide-semiconductor field effect transistor Q2 drain electrode.
Described audio processor module be provided with 9 ADC passages for real time monitoring and 2 DAC passages for controlling the operating state of electric current injecting type power amplifier, above-mentioned 9 ADC passages are respectively ADC1, ADC2, ADC3, ADC4, ADC5, ADC6, ADC7, ADC8 and ADC9, and above-mentioned 2 DAC passages are respectively DAC1 passage and DAC2 passage, audio processor module ADC1 connects metal-oxide-semiconductor field effect transistor Q1 drain electrode and is used for monitoring metal-oxide-semiconductor field effect transistor Q1 drain voltage, audio processor module ADC4 connects metal-oxide-semiconductor field effect transistor Q2 drain electrode and is used for monitoring metal-oxide-semiconductor field effect transistor Q2 drain voltage, audio processor module ADC2 connects metal-oxide-semiconductor field effect transistor Q1 source electrode and is used for monitoring metal-oxide-semiconductor field effect transistor Q1Ids electric current, audio processor module ADC3 connects metal-oxide-semiconductor field effect transistor Q2 source electrode and is used for monitoring metal-oxide-semiconductor field effect transistor Q2Ids electric current, audio processor module ADC5 and ADC6 are respectively used to survey metal-oxide-semiconductor field effect transistor Q1 and metal-oxide-semiconductor field effect transistor Q2 junction temperature Tj, out of control and abnormality realizes strict protection for auxiliary supervision to power amplifier and to all of power amplifier for audio processor module ADC7, ADC8 and ADC9.Audio processor module DAC1 is by audio process output for controlling the quiescent bias current of metal-oxide-semiconductor field effect transistor Q1, metal-oxide-semiconductor field effect transistor Q2, and audio processor module DAC2 is the midpoint potential for the output of power ratio control amplifier by audio process output.
Bridge-type dynamic power supplies operation principle of the present invention is: metal-oxide-semiconductor field effect transistor M1, M2, M3, M4, inductor L1, L2, metallized film capacitor C1, C2 and audio processor module build digital power pontoon bridge, audio processor module can be carried out real time monitoring and pass through the operating state of 2 DAC passage control electric current injecting type power amplifiers electric current injecting type power amplifier by 9 ADC passages of audio processor module, be specially, through software algorithm processing, by changing the input of metal-oxide-semiconductor field effect transistor M1, M2, M3, M4
Pulse duration is adjusted metal-oxide-semiconductor field effect transistor Q1 automatically according to the variation of ADC1～ADC6, the quiescent biasing power of Q2, power is by inductor L1, L2, metallized film capacitor C1, C2 energy storage shaping makes metal-oxide-semiconductor field effect transistor Q1, it is constant that the Vds voltage of Q2 and Tj junction temperature keep, Ids electric current remains on linear zone and meets input signal and the gain characteristic of output signal, when work, audio processor module is sprayed the operating mode of amplifier according to electric current, dynamically adjust input metal-oxide-semiconductor field effect transistor Q1 by the algorithm of setting, the electrical power of Q2 drain electrode, make metal-oxide-semiconductor field effect transistor Q1, it is relatively constant that the tube voltage drop Vds of Q2 remains, metal-oxide-semiconductor field effect transistor Q1 is flow through in guarantee, the junction temperature that the operating current of Q2 produces is in controlled correct scope, bridge-type dynamic power supplies of the present invention can ensure that the operating state of electric current injection amplifier metal-oxide-semiconductor field effect transistor Q1, Q2 remains best, thereby controls dissipation power and the junction temperature of metal-oxide-semiconductor field effect transistor Q1, Q2, to reach best tonequality and maximum power output.The present invention is also applicable to the circuit of power tube Q1, Q2 use BJT double pole triode.
For a person skilled in the art, can be according to technical scheme described above and design, make other various corresponding changes and distortion, and these all changes and distortion all should belong to the protection range of the claims in the present invention within.
Claims (1)
1. the bridge-type dynamic power supplies of supporting access electric current injecting type audio-frequency power amplifier, it is characterized in that: comprise metal-oxide-semiconductor field effect transistor M1, metal-oxide-semiconductor field effect transistor M2, metal-oxide-semiconductor field effect transistor M3, metal-oxide-semiconductor field effect transistor M4, inductor L1, inductor L2, metallized film capacitor C1, metallized film capacitor C2 and audio processor module, described metal-oxide-semiconductor field effect transistor M1 grid meets the pulse-width modulation drive output SPWM1_N of audio processor module, the source electrode of metal-oxide-semiconductor field effect transistor M1 connects the drain electrode of metal-oxide-semiconductor field effect transistor M2 and one end of inductor L1, the drain electrode of metal-oxide-semiconductor field effect transistor M1 meets power supply+Vdd, metal-oxide-semiconductor field effect transistor M2 grid meets the pulse-width modulation drive output SPWM1_P of audio processor module, metal-oxide-semiconductor field effect transistor M2 source electrode meets power supply-Vss, metal-oxide-semiconductor field effect transistor M2 drain electrode connects one end of metal-oxide-semiconductor field effect transistor M1 source electrode and inductor L1, another termination metallized film capacitor C1 of inductor L1 and metal-oxide-semiconductor field effect transistor Q1 drain electrode, metal-oxide-semiconductor field effect transistor M3 grid meets the pulse-width modulation drive output SPWM2_N of audio processor module, and the source electrode of metal-oxide-semiconductor field effect transistor M3 connects the drain electrode of metal-oxide-semiconductor field effect transistor M4 and one end of inductor L2, and metal-oxide-semiconductor field effect transistor M3 drain electrode meets power supply+Vdd, metal-oxide-semiconductor field effect transistor M4 grid meets the pulse-width modulation drive output SPWM2_P of audio processor module, metal-oxide-semiconductor field effect transistor M4 source electrode meets power supply-Vss, metal-oxide-semiconductor field effect transistor M4 drain electrode connects one end of metal-oxide-semiconductor field effect transistor M3 source electrode and inductor L2, another termination metallized film capacitor C2 of inductor L2 and metal-oxide-semiconductor field effect transistor Q2 drain electrode, described audio processor module be provided with 9 ADC passages for real time monitoring and 2 DAC passages for controlling the operating state of electric current injecting type power amplifier, above-mentioned 9 ADC passages are respectively ADC1, ADC2, ADC3, ADC4, ADC5, ADC6, ADC7, ADC8 and ADC9, and above-mentioned 2 DAC passages are respectively DAC1 passage and DAC2 passage, audio processor module ADC1 connects metal-oxide-semiconductor field effect transistor Q1 drain electrode and is used for monitoring metal-oxide-semiconductor field effect transistor Q1 drain voltage, audio processor module ADC4 connects metal-oxide-semiconductor field effect transistor Q2 drain electrode and is used for monitoring metal-oxide-semiconductor field effect transistor Q2 drain voltage, audio processor module ADC2 connects metal-oxide-semiconductor field effect transistor Q1 source electrode for monitoring the Ids electric current of metal-oxide-semiconductor field effect transistor Q1, audio processor module ADC3 connects metal-oxide-semiconductor field effect transistor Q2 source electrode for monitoring the Ids electric current of metal-oxide-semiconductor field effect transistor Q2, audio processor module ADC5 and ADC6 are respectively used to survey metal-oxide-semiconductor field effect transistor Q1 and metal-oxide-semiconductor field effect transistor Q2 junction temperature Tj, audio processor module DAC1 is by audio process output for controlling the dynamic bias of metal-oxide-semiconductor field effect transistor Q1, metal-oxide-semiconductor field effect transistor Q2, and audio processor module DAC2 is the midpoint potential for the output of power ratio control amplifier by audio process output.
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|---|---|---|---|---|
| US5973564A (en) * | 1998-04-02 | 1999-10-26 | Burr-Brown Corporation | Operational amplifier push-pull output stage with low quiescent current |
| US6107887A (en) * | 1998-10-02 | 2000-08-22 | Micro Linear Corporation | Differential to single-ended video cable driver having BICMOS current-mode operational amplifier |
| US20050007198A1 (en) * | 2001-10-23 | 2005-01-13 | Versteegen Marius Gerardus Jacobus | Power amplifier module |
| CN201075835Y (en) * | 2007-09-20 | 2008-06-18 | 成都天奥电子有限公司 | New type audio power amplifier supply power |
-
2014
- 2014-04-24 CN CN201410168015.9A patent/CN103944519B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5973564A (en) * | 1998-04-02 | 1999-10-26 | Burr-Brown Corporation | Operational amplifier push-pull output stage with low quiescent current |
| US6107887A (en) * | 1998-10-02 | 2000-08-22 | Micro Linear Corporation | Differential to single-ended video cable driver having BICMOS current-mode operational amplifier |
| US20050007198A1 (en) * | 2001-10-23 | 2005-01-13 | Versteegen Marius Gerardus Jacobus | Power amplifier module |
| CN201075835Y (en) * | 2007-09-20 | 2008-06-18 | 成都天奥电子有限公司 | New type audio power amplifier supply power |
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Effective date of registration: 20181108 Address after: 430023 No. 34, Han Xi Bei Road, Wuhan, Hubei. Patentee after: Qian Jun Address before: 528000 Foshan, Shunde, Guangdong, Ronggui, Ronggui, 3, No. two of the south level. Patentee before: FOSHAN CITY SHUNDE DISTRICT LONGRISE ELECTRON TECHNOLOGY CO., LTD. |
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Effective date of registration: 20210816 Address after: 430023 Room 201, floor 2, building 5, national three new material incubator, No. 17, Gutian fifth road, Qiaokou District, Wuhan City, Hubei Province Patentee after: Wuhan yajiyun Technology Co.,Ltd. Address before: 430023 No. 34, Han Xi Bei Road, Wuhan, Hubei. Patentee before: Qian Jun |