CN103922319B - Boron doped graphene nano belt and preparation method thereof - Google Patents
Boron doped graphene nano belt and preparation method thereof Download PDFInfo
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- CN103922319B CN103922319B CN201310012984.0A CN201310012984A CN103922319B CN 103922319 B CN103922319 B CN 103922319B CN 201310012984 A CN201310012984 A CN 201310012984A CN 103922319 B CN103922319 B CN 103922319B
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Abstract
The present invention relates to a kind of boron doped graphene nano belt and preparation method thereof, comprise the steps: to prepare carbonoxide nanometer wall slurry; Prepare boron doped graphene nano belt.Boron doped graphene nano belt of the present invention belongs to the doping of P type, and can increase hole concentration, improve it to lithium current potential simultaneously, and the productive rate of boron doped graphene nano belt is high, raw material can be prepared voluntarily, reduces production cost.Equipment required in preparation process is all common chemical industry equipment, can save research and development equipment cost, is applicable to scale operation.
Description
Technical field
The present invention relates to chemical material synthesis field, particularly relate to a kind of boron doped graphene nano belt and preparation method thereof.
Background technology
The kind of carbon material comprises the soccerballene (C of zero dimension
60deng), the carbon nanotube, carbon nanofiber etc. of one dimension, the Graphene of two dimension, three-dimensional graphite, diamond etc.Carbon nanometer wall (english abbreviation CNW) is the carbon nano structure with two-dimensional diffusion structure, its most typical shape characteristic can grow perpendicular to substrate material surface exactly, and be greater than the wall-like structure of Graphene for thickness, they are completely different from the feature of soccerballene, carbon nanotube, Graphene etc., can be used as the raw material of other carbon material of preparation.
Before finding early than Graphene, people just begin one's study the preparation of carbon nanometer wall, just have preparation and the related application thereof of reported in literature carbon nanometer wall in 2002.Graphene nanobelt not only has the performance of Graphene, also possesses the performance that some are special, and such as its length-to-diameter ratio is very large, can up to thousands of times, can copper conductor be replaced at integrated circuit connection, to improve integrated level further, also can carry out modification to its structure and be prepared into switch device.But no matter be early stage preparation method or nearest preparation method, all can relate to and react under plasma atmosphere, this will cause certain destruction to the structure of CNW.In addition, the problem there is size control difficulty in graphene nanobelt preparation process, yielding poorly, which also limits its application.
Summary of the invention
Goal of the invention of the present invention is to solve above-mentioned prior art Problems existing and deficiency, a kind of boron doped graphene nano belt and preparation method thereof is provided, boron doped graphene nano belt belongs to N-type doping, electron density can be increased, also can improve the electroconductibility of graphene nanobelt simultaneously, make it in switch device as conductive additive advantageously.
For reaching goal of the invention of the present invention, the technical solution used in the present invention is: a kind of preparation method of boron doped graphene nano belt, comprise the steps: that (a) prepares carbonoxide nanometer wall slurry: get carbon nanometer wall and join in the vitriol oil, add potassium permanganate and stir, add deionized water again and carry out suction filtration, wash with hydrochloric acid afterwards, suction filtration in neutral, obtains carbonoxide nanometer wall slurry to filtrate.
B () prepares boron doped graphene nano belt: stir after being mixed in the ratio of 1:0.01 ~ 0.5 with boron-doping agent by described carbonoxide nanometer wall slurry; then being transferred directly to temperature is heat 10 ~ 300 minutes in the protective atmosphere of 500 ~ 1000 DEG C, obtains boron doped graphene nano belt after being cooled to room temperature.
Boron doped graphene nano belt belongs to N-type doping, can increase electron density, also can improve the electroconductibility of graphene nanobelt simultaneously, makes it in switch device as conductive additive advantageously.
In described step (a), the mass volume ratio of described carbon nanometer wall, the described vitriol oil, described potassium permanganate and described hydrogen peroxide is: 50g:1150ml:150g:250ml.
In described step (b), described boron-doping agent is at least one in urea, ammonium nitrate, volatile salt or bicarbonate of ammonia.
In described step (b), described protective atmosphere is at least one in helium, nitrogen, argon gas.
Described carbon nanometer wall is prepared by following steps: (c) etched substrate: substrate etching cleaned up after 0.5 ~ 10 minute with the dilute acid soln of 0.01 ~ 1mol/L;
D () prepares carbon nanometer wall: described substrate is placed in oxygen-free environment and is heated to 600 ~ 900 DEG C; then substrate surface described in UV-irradiation is opened; pass into carbonaceous material and protective gas again and keep 30 ~ 300 minutes, obtaining carbon nanometer wall at described substrate surface.
Etching method is adopted to prepare vertical carbon nanometer wall with photochemical catalysis chemical Vapor deposition process, its preparation technology is simple, condition is easily controlled, shorten etching time while improve production efficiency, and photochemical catalysis effectively can reduce temperature of reaction, reduce energy consumption, reduce production cost, and effectively can avoid produced problem in the plasma method preparation process in existing method, make the thickness of carbon nanometer wall evenly, structure is more complete.
In described step (c), described substrate is a kind of in iron foil, nickel foil, cobalt paper tinsel, and described dilute acid soln is the one in hydrochloric acid, nitric acid, sulfuric acid, and the concentration of described dilute acid soln is 0.1 ~ 0.5mol/L.
In described step (c), the time of described etching is 1 ~ 3 minute, and described substrate deionized water, ethanol, acetone clean successively.
In described step (d); described carbonaceous material is at least one in methane, ethane, propane, acetylene, alcohol vapor; described protective gas is at least one in helium, nitrogen, argon gas; the flow velocity passing into described carbonaceous material is 10 ~ 1000sccm, and the volume ratio of described carbonaceous material and described protective gas is (2 ~ 10): 1.
The present invention also comprises the boron doped graphene nano belt utilizing above-mentioned preparation method to obtain.
Compared with prior art, boron doped graphene nano belt of the present invention and preparation method thereof, there is following advantage: 1. boron doped graphene nano belt belongs to N-type doping, electron density can be increased, also can improve the electroconductibility of graphene nanobelt simultaneously, make it in switch device as conductive additive advantageously.The productive rate of boron doped graphene nano belt is high, and the specific conductivity of nano belt have also been obtained raising, and raw material can be prepared voluntarily, reduces production cost.
2. adopt etching method to prepare vertical carbon nanometer wall with photochemical catalysis chemical Vapor deposition process, its preparation technology is simple, condition is easily controlled, shorten etching time while improve production efficiency, and photochemical catalysis effectively can reduce temperature of reaction, reduce energy consumption, reduce production cost, and effectively can avoid produced problem in the plasma method preparation process in existing method, make the thickness of carbon nanometer wall evenly, structure is more complete.
3. equipment required in preparation process is all common chemical industry equipment, can save research and development equipment cost, is applicable to scale operation.
Accompanying drawing explanation
Fig. 1 is that the carbon nanometer wall SEM prepared by the embodiment of the present invention 1 schemes.
Fig. 2 is that the boron doped graphene nano belt SEM prepared by the embodiment of the present invention 1 schemes.
Embodiment
Below in conjunction with embodiment, elaboration is further given to the present invention.
The preparation process of boron doped graphene nano belt of the present invention is roughly divided into following steps: 1. etched substrate: substrate is put into the dilute acid soln etching 0.5 ~ 10 minute that concentration is 0.01 ~ 1mol/L, etch rear deionized water, ethanol, acetone cleans.
This step object is: by making metal liner end eclipse surface produce defect to metal substrate etching, effectively can improve the surface tissue of metal substrate, carbon nanometer wall energy is enough grown at this metal substrate surface.
Wherein, the preferred time etching this metal substrate is 60 ~ 180 seconds, and the preferred acid strength of etching metal substrate is 0.1 ~ 0.5mol/L.Preferred etching condition, can reach the effect of good etching above, improves the growth efficiency of carbon nanometer wall.
2. prepare carbon nanometer wall: cleaned substrate is put into reaction chamber and gets rid of the air of reaction chamber; then by silicon to 600 ~ 900 DEG C; open ultraviolet source equipment again; make UV-irradiation at substrate surface; then by volume (2 ~ 10): 1 passes into carbonaceous material (flow is 10 ~ 1000sccm) and protective gas, and keeps 30 ~ 300 minutes.
This step object is: the air got rid of in reaction chamber can remove the oxygen in reaction chamber, and avoid the participation of oxygen and affect the growth of carbon nanometer wall, the growth for carbon nanometer wall provides a stable environment.
After having reacted, stop passing into carbonaceous material, stop silicon; and close ultraviolet source equipment, stop after question response room is cooled to room temperature passing into protective gas, namely obtain carbon nanometer wall at substrate surface; it is scraped from substrate surface, just obtains pulverous carbon nanometer wall.
Wherein, substrate is a kind of in iron foil, nickel foil, cobalt paper tinsel, and dilute acid soln is the one in hydrochloric acid, nitric acid, sulfuric acid.Protective gas is at least one in helium, nitrogen, argon gas, and carbonaceous material is at least one in methane, ethane, propane, acetylene, alcohol vapor.
3. prepare carbonoxide nanometer wall slurry: pulverous carbon nanometer wall above-mentioned steps 2 prepared joins in the vitriol oil of 0 DEG C, add potassium permanganate again, the temperature of mixture is kept to remain on less than 10 DEG C, after stirring 2h, 24h is stirred in room-temperature water bath, slowly deionized water is added again under condition of ice bath, after 15min, add the deionized water suction filtration containing 30% concentration hydrogen peroxide again, mixture color becomes glassy yellow afterwards, wash with the hydrochloric acid that concentration is 10% again, after suction filtration is neutrality to filtrate, namely obtain carbonoxide nanometer wall slurry.
Wherein, the mass volume ratio of carbon nanometer wall, the vitriol oil, potassium permanganate and hydrogen peroxide is: 50g:1150ml:150g:250ml.
4. prepare boron doped graphene nano belt: be 1:(0.01 ~ 0.5 in mass ratio by carbonoxide nanometer wall slurry and boron-doping agent) mix after stir; transferring to temperature is again heat 10 ~ 300 minutes in the protective atmosphere of 500 ~ 1000 DEG C; high temperature can make carbonoxide nanometer wall and nitrating agent decompose, and the effect to the reduction of carbonoxide nanometer wall is also played in nitrating agent simultaneously.In the process of decomposing, realize the stripping of carbonoxide nanometer wall and the doping reaction of nitrogen.To be cooledly to collect to room temperature, just obtain boron doped graphene nano belt.
Wherein, boron-doping agent is at least one in urea, ammonium nitrate, volatile salt or bicarbonate of ammonia.Protective atmosphere is at least one in helium, nitrogen, argon gas.
The present invention also comprises the boron doped graphene nano belt utilizing above-mentioned preparation method to obtain.
Be specifically described with the preparation process of embodiment 1 ~ 3 to boron doped graphene nano belt of the present invention below.
Embodiment 1:1. etched substrate: nickel foil is put into the dilute hydrochloric acid solution etching 0.5 minute that concentration is 1mol/L, the good rear deionized water of etching, ethanol, acetone clean.
2. prepare carbon nanometer wall: cleaned nickel foil put into reaction chamber and after getting rid of the air of described reaction chamber, nickel foil be heated to 900 DEG C; then ultraviolet source equipment is opened; make UV-irradiation on nickel foil surface; then carbonaceous material methane (flow is 200sccm) and protective gas nitrogen is passed into; the volume ratio of methane and nitrogen is 2:1, and keeps 100 minutes.
After having reacted, stop passing into carbonaceous material, stop nickel foil heating and close light source, stopping after question response room is cooled to room temperature passing into nitrogen, carbon nanometer wall can be obtained on nickel foil surface, it is scraped from nickel foil surface, just obtain carbon nanometer wall powder.
3. prepare carbonoxide nanometer wall slurry: prepare carbonoxide nanometer wall slurry: 50g carbon nanometer wall is added 0 DEG C, in the vitriol oil of 1.15L, add 150g potassium permanganate again, the temperature of mixture remains on less than 10 DEG C, stir 2h, then after room-temperature water bath stirs 24h, 4.6L deionized water is slowly added under condition of ice bath, after 15min, add 14L deionized water (wherein containing 250ml concentration is the hydrogen peroxide of 30%) again, mixture color becomes glassy yellow afterwards, suction filtration, wash with the hydrochloric acid that 2.5L concentration is 10% again, suction filtration, until filtrate is in neutral.
4. prepare boron doped graphene nano belt: by carbonoxide nanometer wall slurry and urea in mass ratio for 1:0.5 mix after stir, being transferred directly to temperature is heat 30 minutes in the nitrogen atmosphere of 800 DEG C, to be cooledly to collect to room temperature, just obtain boron doped graphene nano belt.
Embodiment 2:1. etched substrate: iron foil is put into the dilution heat of sulfuric acid etching 4 minutes that concentration is 0.5mol/L, the good rear deionized water of etching, ethanol, acetone clean.
2. prepare carbon nanometer wall: cleaned nickel foil put into reaction chamber and after getting rid of the air of described reaction chamber, iron foil be heated to 600 DEG C; then ultraviolet source equipment is opened; make UV-irradiation on iron foil surface; then carbonaceous material ethane (flow is 100sccm) and protective gas argon gas is passed into; the volume ratio of methane and argon gas is 5:1, and keeps 200 minutes.
After having reacted, stop passing into carbonaceous material, stop iron foil heating and close light source; stop after question response room is cooled to room temperature passing into protective gas; carbon nanometer wall can be obtained on iron foil surface, it is scraped from iron foil surface, just obtain carbon nanometer wall powder.
3. prepare carbonoxide nanometer wall slurry: prepare carbonoxide nanometer wall slurry: 50g carbon nanometer wall is added 0 DEG C, in the vitriol oil of 1.15L, add 150g potassium permanganate again, the temperature of mixture remains on less than 10 DEG C, stir 2h, then after room-temperature water bath stirs 24h, 4.6L deionized water is slowly added under condition of ice bath, after 15min, add 14L deionized water (wherein containing 250ml concentration is the hydrogen peroxide of 30%) again, mixture color becomes glassy yellow afterwards, suction filtration, wash with the hydrochloric acid that 2.5L concentration is 10% again, suction filtration, until filtrate is in neutral.
4. prepare boron doped graphene nano belt: by carbonoxide nanometer wall slurry and ammonium nitrate in mass ratio for 1:0.1 mix after stir, being transferred directly to temperature is heat 10 minutes in the helium atmosphere of 500 DEG C, to be cooledly to collect to room temperature, just obtain boron doped graphene nano belt.
Embodiment 3:1. etched substrate: cobalt paper tinsel is put into the dilute nitric acid solution etching 10 minutes that concentration is 0.011mol/L, the good rear deionized water of etching, ethanol, acetone clean.
2. prepare carbon nanometer wall: cleaned cobalt paper tinsel put into reaction chamber and after getting rid of the air of described reaction chamber, cobalt paper tinsel be heated to 700 DEG C; then ultraviolet source equipment is opened; make UV-irradiation on cobalt paper tinsel surface; then carbonaceous material acetylene (flow is 10sccm) and protective gas helium is passed into; the volume ratio of acetylene and helium is 8:1, and keeps 300 minutes.
After having reacted, stop passing into carbonaceous material, stop the heating of cobalt paper tinsel and close light source; stop after question response room is cooled to room temperature passing into protective gas; carbon nanometer wall can be obtained on nickel foil surface, it is scraped from cobalt paper tinsel surface, just obtain carbon nanometer wall powder.
3. prepare carbonoxide nanometer wall slurry: prepare carbonoxide nanometer wall slurry: 50g carbon nanometer wall is added 0 DEG C, in the vitriol oil of 1.15L, add 150g potassium permanganate again, the temperature of mixture remains on less than 10 DEG C, stir 2h, then after room-temperature water bath stirs 24h, 4.6L deionized water is slowly added under condition of ice bath, after 15min, add 14L deionized water (wherein containing 250ml concentration is the hydrogen peroxide of 30%) again, mixture color becomes glassy yellow afterwards, suction filtration, wash with the hydrochloric acid that 2.5L concentration is 10% again, suction filtration, until filtrate is in neutral.
4. prepare boron doped graphene nano belt: by carbonoxide nanometer wall slurry and ammonium nitrate in mass ratio for 1:0.2 mix after stir, being transferred directly to temperature is heat 100 minutes in the argon gas atmosphere of 1000 DEG C, to be cooledly to collect to room temperature, just obtain boron doped graphene nano belt.
As can be seen from the carbon nanometer wall SEM figure in Fig. 1, the carbon nanometer wall thickness adopting photochemical catalysis chemical Vapor deposition process to prepare is even, is 20 ~ 40nm, and basic vertical substrates growth, high consistency is good.As shown in the boron doped graphene nano belt SEM figure of Fig. 2, after carbon nanometer wall is stripped into boron doped graphene nano belt, even width, is about 30 ~ 60nm, and length is about 0.5 ~ 5um.Length-to-diameter ratio reaches as high as 130.
Following table 1 is the design parameter of embodiment 4 ~ 11, and the processing step of embodiment 4 ~ 11 is identical with embodiment 1 ~ 3, and difference is processing parameter and processing condition, repeats no more its processing step at this.
Boron doped graphene nano belt of the present invention and preparation method thereof, there is following advantage: 1. boron doped graphene nano belt belongs to N-type doping, can electron density be increased, also can improve the electroconductibility of graphene nanobelt simultaneously, make it in switch device as conductive additive advantageously.The productive rate of boron doped graphene nano belt is high, and the specific conductivity of nano belt have also been obtained raising, and raw material can be prepared voluntarily, reduces production cost.
2. adopt etching method to prepare vertical carbon nanometer wall with photochemical catalysis chemical Vapor deposition process, its preparation technology is simple, condition is easily controlled, shorten etching time while improve production efficiency, and photochemical catalysis effectively can reduce temperature of reaction, reduce energy consumption, reduce production cost, and effectively can avoid produced problem in the plasma method preparation process in existing method, make the thickness of carbon nanometer wall evenly, structure is more complete.
3. equipment required in preparation process is all common chemical industry equipment, can save research and development equipment cost, is applicable to scale operation.
Foregoing; be only preferred embodiment of the present invention; not for limiting embodiment of the present invention; those of ordinary skill in the art are according to central scope of the present invention and spirit; can carry out corresponding flexible or amendment very easily, therefore protection scope of the present invention should be as the criterion with the protection domain required by claims.
Claims (8)
1. a preparation method for boron doped graphene nano belt, is characterized in that, comprises the steps:
A () prepares carbonoxide nanometer wall slurry: get carbon nanometer wall and join in the vitriol oil, add potassium permanganate and stir, then adds deionized water and carry out suction filtration, washs afterwards with hydrochloric acid, and suction filtration in neutral, obtains carbonoxide nanometer wall slurry to filtrate; Wherein, described deionized water contains hydrogen peroxide;
B () prepares boron doped graphene nano belt: stir after being mixed in the ratio of 1:0.01 ~ 0.5 with boron-doping agent by described carbonoxide nanometer wall slurry; then being transferred directly to temperature is heat 10 ~ 300 minutes in the protective atmosphere of 500 ~ 1000 DEG C, obtains boron doped graphene nano belt after being cooled to room temperature.
2. preparation method according to claim 1, is characterized in that, in described step (a), the mass volume ratio of described carbon nanometer wall, the described vitriol oil, described potassium permanganate and described hydrogen peroxide is: 50g:1150ml:150g:250ml.
3. preparation method according to claim 1, is characterized in that, in described step (b), described boron-doping agent is at least one in boron trioxide or boric acid.
4. preparation method according to claim 1, is characterized in that, in described step (b), described protective atmosphere is at least one in helium, nitrogen, argon gas.
5. preparation method according to claim 1, is characterized in that, in described step (a), described carbon nanometer wall is prepared by following steps:
(c) etched substrate: substrate etching was cleaned up after 0.5 ~ 10 minute with the dilute acid soln of 0.01 ~ 1mol/L;
D () prepares carbon nanometer wall: described substrate is placed in oxygen-free environment and is heated to 600 ~ 900 DEG C; then substrate surface described in UV-irradiation is opened; pass into carbonaceous material and protective gas again and keep 30 ~ 300 minutes, obtaining carbon nanometer wall at described substrate surface.
6. preparation method according to claim 5, it is characterized in that, in described step (c), described substrate is a kind of in iron foil, nickel foil, cobalt paper tinsel, described dilute acid soln is the one in hydrochloric acid, nitric acid, sulfuric acid, and the concentration of described dilute acid soln is 0.1 ~ 0.5mol/L.
7. preparation method according to claim 5, is characterized in that, in described step (c), the time of described etching is 1 ~ 3 minute, and described substrate deionized water, ethanol, acetone clean successively.
8. preparation method according to claim 5; it is characterized in that; in described step (d); described carbonaceous material is at least one in methane, ethane, propane, acetylene, alcohol vapor; described protective gas is at least one in helium, nitrogen, argon gas; the flow velocity passing into described carbonaceous material is 10 ~ 1000sccm, and the volume ratio of described carbonaceous material and described protective gas is (2 ~ 10): 1.
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| CN103935976B (en) * | 2013-01-18 | 2016-05-18 | 海洋王照明科技股份有限公司 | Carbon nanometer wall and graphene nanobelt and preparation method |
| CN104764782B (en) * | 2015-04-10 | 2017-06-13 | 大连理工大学 | A kind of preparation and its application for detecting the boron doped graphene quantum dot electrochemical luminescence sensor of miRNA 20a |
| US10961125B2 (en) * | 2016-02-15 | 2021-03-30 | Tokyo Institute Of Technology | SP2 carbon-containing composition, graphene quantum dot-containing composition, methods of manufacturing thereof, and method of peeling graphite |
| CN107271082B (en) * | 2017-05-26 | 2020-05-22 | 宁波工程学院 | B-doped SiC nanobelt high-strain-coefficient high-sensitivity pressure sensor and preparation method thereof |
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