CN103926966B - Low-voltage band-gap reference circuit - Google Patents
Low-voltage band-gap reference circuit Download PDFInfo
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- CN103926966B CN103926966B CN201410146385.2A CN201410146385A CN103926966B CN 103926966 B CN103926966 B CN 103926966B CN 201410146385 A CN201410146385 A CN 201410146385A CN 103926966 B CN103926966 B CN 103926966B
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Abstract
The invention discloses a low-voltage band-gap reference circuit. The low-voltage band-gap reference circuit comprises a first portion and a second portion, wherein the first portion comprises a band-gap reference circuit body consisting of a first starting circuit and two symmetric amplifiers; the output ends of the amplifiers are fed back to an input end through a current mirror structure; required part of current is provided for the amplifiers; grids of two input tubes of the amplifiers are forcedly equal to each other by using the band-gap reference circuit body through BJT (bipolar junction transistors) of two PNP (precision navigation processors), so that a positive temperature coefficient voltage [PTAT (proportional to absolute temperature) voltage] is generated, a current source is provided for the circuit, and moreover, the grid of one of the amplifiers provides inputted PTAT bias voltage for the second portion via a divider resistor; the second portion comprises a band-gap reference circuit body consisting of a second starting circuit and six cascaded OVF (over frequency) circuits; the input end and the output end of each OVF circuit are connected together to form negative feedback; and the output end of the band-gap reference circuit body is connected with a unit gain buffer. The band-gap reference circuit can run in low voltage, and the stability of outputted voltage is high.
Description
Technical field
The present invention relates to a kind of band-gap reference circuit (BGR), particularly relate to a kind of band-gap reference circuit of low pressure.
Background technology
Reference source is the important component part of integrated circuit, and it is widely used in power management chip, temperature sensor, ADC, DAC, storer.Because band gap reference can the CMOS technology of compatibility standard completely, and precision is little by technogenic influence, it still can well work at low supply voltages, and the performance of all technical of bandgap reference voltage is excellent, as: temperature drift coefficient, Power Supply Rejection Ratio, noise, line regulation etc. can meet request for utilization completely.Based on above advantage, band-gap reference circuit had been widely used in recent years, became a study hotspot.
Because the output of traditional band-gap reference is about 1.2V, so the supply voltage of this reference circuit at more than 1.2V, must which limits the application of band-gap reference under lower pressure.Along with the development of integrated circuit technique, characteristic dimension is more and more less, and the integrated level of chip is more and more higher, and supply voltage is more and more lower, therefore, has great importance to the research of the band-gap reference circuit being operated in lower pressure.
In prior art, be published in May, 1999 " the CMOS band-gap reference circuit that sub-1 coucher is done " (" the A CMOS Bandgap Reference Circuit With Sub-1-V Operation ") of IEEE magazine solid-state circuit the 34th volume, the article disclose the classical architecture of the bandgap voltage reference under the low supply voltage of a kind of pole, the structure of this bandgap voltage reference as shown in Figure 1.This circuit adopt be electric current summation pattern reference source, its core thinking first obtains the electric current that two have positive and negative temperature coefficient respectively, to be obtained the output of reference source after two electric current summations by electric resistance partial pressure again, the output voltage of reference source realizes by regulating the ratio of divider resistance.
At least there is following shortcoming in above-mentioned prior art:
Under although this circuit is operated in lower pressure, because it uses 2 grades of amplifiers, speed and difference on the frequency some, what its output adopted is Single-end output, and compared with fully differential mode, its output voltage swing is less, and common mode noise immunity is also more weak.This band-gap reference can the scope of operating voltage neither be very large, circuit stability, capability of resistance to radiation are not high.
Summary of the invention
The object of this invention is to provide a kind of band-gap reference circuit that can realize high stability under lower pressure.
The object of the invention is to be achieved through the following technical solutions:
The band-gap reference circuit of low pressure of the present invention, comprises Part I and Part II;
Described Part I comprises the band-gap reference be made up of the first start-up circuit and two symmetrical amplifiers, the output of described amplifier feeds back to input end by current-mirror structure, for this amplifier provides required portion of electrical current, it is equal that this band-gap reference makes the grid of two of amplifier input pipes force by the BJT of two PNP, thus produce a positive temperature coefficient (PTC) voltage (PTAT voltage), for providing current source in this circuit, the grid of one of them amplifier is inputted PTAT bias voltage through divider resistance for Part II provides simultaneously;
Described Part II comprises the band-gap reference be made up of the OVF circuit of the second start-up circuit and 6 cascades, and the input and output side of each OVF circuit is connected together, and form negative feedback, the output terminal of this band-gap reference is connected with unity gain buffer.
As seen from the above technical solution provided by the invention, the band-gap reference circuit of the low pressure that the embodiment of the present invention provides, owing to passing through use 2 layers of band-gap reference Structure composing cascade band gap, improve the stability of band-gap reference, reduce input offset voltage, thus realize under low-voltage condition, the band-gap reference circuit of high stability.Meanwhile, this band gap exports by a unity gain buffer, improves the precision of output voltage.
Accompanying drawing explanation
Fig. 1 is the typical structure of bandgap voltage reference in prior art one;
The structural representation of the Part I of the band-gap reference circuit of the low pressure that Fig. 2 provides for the embodiment of the present invention;
The structural representation of the Part II of the band-gap reference circuit of the low pressure that Fig. 3 provides for the embodiment of the present invention.
Embodiment
To be described in further detail the embodiment of the present invention below.
The band-gap reference circuit of low pressure of the present invention, its preferably embodiment be:
Comprise Part I and Part II;
Described Part I comprises the band-gap reference be made up of the first start-up circuit and two symmetrical amplifiers, the output of described amplifier feeds back to input end by current-mirror structure, for this amplifier provides required portion of electrical current, it is equal that this band-gap reference makes the grid of two of amplifier input pipes force by the BJT of two PNP, thus produce a positive temperature coefficient (PTC) voltage (PTAT voltage), for providing current source in this circuit, the grid of one of them amplifier (left side) is inputted PTAT bias voltage through divider resistance for Part II provides simultaneously;
Described Part II comprises the band-gap reference be made up of the OVF circuit of the second start-up circuit and 6 cascades, and the input and output side of each OVF circuit is connected together, and form negative feedback, the output terminal of this band-gap reference is connected with unity gain buffer.
Described amplifier is the folded common source and common grid amplifier of fully differential.
Be connected to NMOS tube in described first start-up circuit and the second start-up circuit, the connected voltage of grid of described NMOS tube is high voltage.
The band-gap reference circuit of low pressure of the present invention, by using 2 layers of band-gap reference Structure composing cascade band gap, improving the stability of band-gap reference, reducing input offset voltage, thus realize under low-voltage condition, the band-gap reference circuit of high stability.Meanwhile, this band gap exports by a unity gain buffer, improves the precision of output voltage.
Specific embodiment:
The band-gap reference circuit of low pressure mainly comprises two parts, and as shown in Figure 2, Part II as shown in Figure 3 for Part I.
Part I mainly provides reference voltage for the PMOS current source in this circuit, simultaneously by divider resistance for Part II provides bias voltage.Part II is the operating voltage in order to reduce band gap.Two part cascades can improve the stability of this circuit.
Described Part I comprises the band-gap reference that start-up circuit and two symmetrical amplifiers are formed, this amplifier is the folded common source and common grid amplifier of a fully differential, export by current-mirror structure (P10, P11 forms one group of current mirror, P15, P16 forms another group current mirror) feed back to input end, for this amplifier provides required portion of electrical current, BJT(bipolar junction transistor by two PNP) make the pressure of the grid of two of amplifier input pipes equal, thus create positive temperature coefficient (PTC) (PTAP) voltage, through divider resistance (R6, R7) for Part II provides input PTAT bias voltage, the start-up circuit of this band-gap reference is simple, by P12, P13, N4 forms the start-up circuit of this part band gap.
Described Part II compensates follower by 6 OVF(offset voltage follower as shown in Figure 3) circuits cascading forms.The input/output terminal of each OVF circuit is connected together, and forms negative feedback.P18, P19, N5 form the start-up circuit of this part band gap.Meanwhile, output terminal is connected to a unity gain buffer, and input end and the output terminal of this impact damper are shorted together.
In foregoing circuit, the connected voltage of grid of N4, N5 is identical high voltage, and this high voltage makes NMOS tube conducting, is dragged down by output voltage.
The beneficial effect of technical solution of the present invention:
(1) the present invention produces reference voltage by using the structure of 2 layers of band-gap reference, realizes the high stability reference voltage at lower pressure, exports by a unity gain buffer, improve the precision of output voltage.
(2) circuit structure symmetry of the present invention is better, is conducive to layout design, improves circuit stability and radiation resistance.
The above; be only the present invention's preferably embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (3)
1. a band-gap reference circuit for low pressure, is characterized in that, comprises Part I and Part II;
Described Part I comprises the first band-gap reference be made up of the first start-up circuit and two symmetrical amplifiers, the output of described amplifier feeds back to input end by current-mirror structure, for this amplifier provides required portion of electrical current, it is equal that this band-gap reference makes the grid of two of amplifier input pipes force by the BJT of two PNP, thus produce a positive temperature coefficient (PTC) voltage, for providing current source in this circuit, the grid of one of them amplifier is inputted PTAT bias voltage through divider resistance for Part II provides simultaneously;
Described Part II comprises the second band-gap reference be made up of the compensation follower OVF circuit of the second start-up circuit and 6 cascades, each input and output side compensating follower OVF circuit is connected together, form negative feedback, the output terminal of this second band-gap reference is connected with unity gain buffer.
2. the band-gap reference circuit of low pressure according to claim 1, is characterized in that, described amplifier is the folded common source and common grid amplifier of fully differential.
3. the band-gap reference circuit of low pressure according to claim 1 and 2, is characterized in that, is connected to NMOS tube in described first start-up circuit and the second start-up circuit, and the connected voltage of grid of described NMOS tube is high voltage.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410146385.2A CN103926966B (en) | 2014-04-11 | 2014-04-11 | Low-voltage band-gap reference circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410146385.2A CN103926966B (en) | 2014-04-11 | 2014-04-11 | Low-voltage band-gap reference circuit |
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| CN103926966A CN103926966A (en) | 2014-07-16 |
| CN103926966B true CN103926966B (en) | 2015-07-08 |
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| CN201410146385.2A Expired - Fee Related CN103926966B (en) | 2014-04-11 | 2014-04-11 | Low-voltage band-gap reference circuit |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106343971A (en) * | 2016-10-18 | 2017-01-25 | 天津工业大学 | Circuit system for measuring pulse and blood oxygen saturation degree |
| CN113110678B (en) * | 2021-04-21 | 2022-11-18 | 湖南融创微电子有限公司 | High-reliability starting circuit based on low power supply voltage bandgap and control method |
| CN116225142B (en) * | 2023-05-06 | 2023-07-21 | 上海灵动微电子股份有限公司 | Non-resistance band gap reference voltage source, reference voltage generating method and integrated circuit |
| CN117784874B (en) * | 2023-12-28 | 2024-10-01 | 电子科技大学 | Radiation-resistant subthreshold band gap reference current source circuit |
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| CN101441489A (en) * | 2008-12-29 | 2009-05-27 | 苏州市华芯微电子有限公司 | Integrated circuit for implementing high PSRR and method thereof |
| CN102591398A (en) * | 2012-03-09 | 2012-07-18 | 钜泉光电科技(上海)股份有限公司 | Multi-output bandgap reference circuit with function of nonlinear temperature compensation |
| CN102622031A (en) * | 2012-04-09 | 2012-08-01 | 中国科学院微电子研究所 | Low-voltage high-precision band-gap reference voltage source |
| CN103389764A (en) * | 2012-05-09 | 2013-11-13 | 快捷半导体(苏州)有限公司 | Low-voltage Bandgap voltage reference circuit and realizing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI237168B (en) * | 2003-05-20 | 2005-08-01 | Mediatek Inc | Low noise fast stable voltage regulator circuit |
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| CN101441489A (en) * | 2008-12-29 | 2009-05-27 | 苏州市华芯微电子有限公司 | Integrated circuit for implementing high PSRR and method thereof |
| CN102591398A (en) * | 2012-03-09 | 2012-07-18 | 钜泉光电科技(上海)股份有限公司 | Multi-output bandgap reference circuit with function of nonlinear temperature compensation |
| CN102622031A (en) * | 2012-04-09 | 2012-08-01 | 中国科学院微电子研究所 | Low-voltage high-precision band-gap reference voltage source |
| CN103389764A (en) * | 2012-05-09 | 2013-11-13 | 快捷半导体(苏州)有限公司 | Low-voltage Bandgap voltage reference circuit and realizing method thereof |
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| 2.5V 19-ppm/℃的带隙基准电压源设计;鲁世斌 等;《安徽大学学报(自然科学版)》;20080930;第32卷(第5期);第41-43页 * |
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