CN103924201B - Magnetron sputtering equipment - Google Patents
Magnetron sputtering equipment Download PDFInfo
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- CN103924201B CN103924201B CN201410126503.3A CN201410126503A CN103924201B CN 103924201 B CN103924201 B CN 103924201B CN 201410126503 A CN201410126503 A CN 201410126503A CN 103924201 B CN103924201 B CN 103924201B
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- magnetron sputtering
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Abstract
Magnetron sputtering equipment of the present invention, comprise film forming chamber and target, target is multiple, multiple target arrangement forms queue, the inside of film forming chamber is provided with relative to queue the first heater for base plate heating, and the inside of film forming chamber is provided with the corresponding secondary heating mechanism in gap between target.Magnetron sputtering equipment of the present invention, the inside of film forming chamber is provided with relative to queue the 3rd heating unit for base plate heating, and the 3rd heating unit comprises multiple heater strip be arranged in parallel, and multiple heater strip is corresponding with the gap between target.Magnetron sputtering equipment of the present invention, secondary heating mechanism or the 3rd heating unit is utilized to make formation temperature on substrate uneven, on substrate, the temperature spread of different zones causes atom on substrate, be different from the attachment speed difference in region, thus can adjust rate of film build, to improve film forming inequality.Magnetron sputtering equipment of the present invention, structure is simple, can effectively prevent substrate surface film forming uneven.
Description
Technical field
The present invention relates to a kind of sputtering method that utilizes and the device of plating is carried out to metallic substance, particularly relate to a kind of magnetron sputtering equipment.
Background technology
Thin Film Transistor (TFT) directly affects the performance of Thin Film Transistor (TFT) liquid-crystal display as Primary Component.At existing TFT-LCD(Thin Film Transistor (TFT) LCD) in manufacture field, the preparation of Thin Film Transistor (TFT) adopts the means of magnetron sputtering plating to complete usually.
Lotus energy particle (as argon ion) bombards solid surface, and the phenomenon causing the various particles of solid surface (as atom, molecule or molecular grouping bundle) to overflow from this solid surface claims " sputtering ".In magnetron sputtering membrane process, normally apply the positive ion bombardment solid (target) that argon gas ionization produces, the neutral atom spilt deposits on substrate (substrate), to form rete.
In large size TFT-LCD, OLED and PV produce, large-scale vertical magnetron sputtering equipment is widely used.In this large-scale vertical magnetron sputtering equipment, target has multiple, and multiple target arrangement forms queue, and substrate (panel) and above-mentioned queue be arranged in parallel, because there is space between multiple target, cause substrate surface film forming uneven thus.Current solution mainly keeps substrate or target can Free Slosh when film forming, but both can roll up equipment energy consumption and complexity like this, needs again to widen its thickness, causes the rising of production cost.
Summary of the invention
The object of the present invention is to provide the magnetron sputtering equipment that a kind of structure simply, effectively prevents substrate surface film forming uneven.
Magnetron sputtering equipment of the present invention, comprise film forming chamber and be arranged at the target of inside of described film forming chamber, described target is multiple, multiple target arrangement forms queue, the inside of described film forming chamber is provided with relative to described queue the first heater for base plate heating, and the inside of described film forming chamber is provided with the corresponding secondary heating mechanism in gap between target.
Magnetron sputtering equipment of the present invention, wherein, the inside of described film forming chamber is provided with the substrate installation region for installation base plate, described substrate installation region is between described first heater and described queue, and described secondary heating mechanism is between described substrate installation region and first heater.
Magnetron sputtering equipment of the present invention, wherein, described secondary heating mechanism is multiple heating rods be arranged in parallel, and multiple described heating rod is corresponding with the gap between described target respectively.
Magnetron sputtering equipment of the present invention, wherein, multiple described heating rod is connected with thermoregulation mechanism respectively.
Magnetron sputtering equipment of the present invention, wherein, the support framework for support substrate is provided with between described substrate installation region and first heater, described secondary heating mechanism is multiple heating support bars be arranged in parallel, and multiple described heating support bar is arranged on support framework also corresponding with the gap between described target respectively.
Magnetron sputtering equipment of the present invention, wherein, multiple described heating support bar is connected with thermoregulation mechanism respectively.
Magnetron sputtering equipment of the present invention, comprise film forming chamber and be arranged at the target of inside of described film forming chamber, described target is multiple, multiple target arrangement forms queue, the inside of described film forming chamber is provided with relative to described queue the 3rd heating unit for base plate heating, described 3rd heating unit comprises multiple heater strip be arranged in parallel, has space between multiple described heater strip, and described multiple heater strip is corresponding with the gap between target.
Magnetron sputtering equipment of the present invention, secondary heating mechanism or the 3rd heating unit is utilized to make formation temperature on substrate uneven, on substrate, the temperature spread of different zones causes atom on substrate, be different from the attachment speed difference in region, thus can adjust rate of film build, to improve film forming inequality.Magnetron sputtering equipment of the present invention, structure is simple, can effectively prevent substrate surface film forming uneven.
Accompanying drawing explanation
Fig. 1 is the vertical view of the structural representation of the first embodiment of magnetron sputtering equipment of the present invention;
Fig. 2 is the vertical view of the structural representation of magnetron sputtering equipment the second embodiment of the present invention;
Fig. 3 is the vertical view of the structural representation of the third embodiment of magnetron sputtering equipment of the present invention;
Fig. 4 is the front view of the structural representation of the 3rd heating unit in Fig. 3.
Embodiment
Below in conjunction with the drawings and specific embodiments, the invention will be further described, can better understand the present invention and can be implemented, but illustrated embodiment is not as a limitation of the invention to make those skilled in the art.
Embodiment one
As shown in Figure 1, the embodiment of magnetron sputtering equipment of the present invention, comprise film forming chamber 10 and be arranged at the target 1 of inside of film forming chamber 10, target 1 is multiple and is set parallel to each other, multiple target 1 arranges and forms queue 11, the inside of film forming chamber 10 is provided with the first heater 101 for for substrate 100 heat relative with queue 11, and the inside of film forming chamber 10 is provided with the corresponding secondary heating mechanism 102 in gap between target 1.Secondary heating mechanism 102 is same for heating for substrate 100.
The embodiment of magnetron sputtering equipment of the present invention, wherein, the inside of film forming chamber 10 is provided with the substrate installation region 2 for installation base plate 100, substrate installation region 2 is between first heater 101 and queue 11, and secondary heating mechanism 102 is between substrate installation region 2 and first heater 101.
The embodiment of magnetron sputtering equipment of the present invention, wherein, secondary heating mechanism 102 is multiple heating rods 3 be arranged in parallel, and multiple heating rod 3 is corresponding with the gap between target 1 respectively.Heating rod 3 is parallel with target 1.
The embodiment of magnetron sputtering equipment of the present invention, wherein, multiple heating rod 3 is connected with thermoregulation mechanism respectively.Heating rod 3 is electrically heated rod.Thermoregulation mechanism is for regulating the temperature of heating rod 3.
Embodiment two
As shown in Figure 2, the embodiment of magnetron sputtering equipment of the present invention and the difference of embodiment one are, the support framework 4 for support substrate 100 is provided with between substrate installation region 2 and first heater 101, secondary heating mechanism 102 is multiple heating support bars 5 be arranged in parallel, and multiple heating support bar 5 is arranged on support framework 4 also corresponding with the gap between target 1 respectively.Heating support bar 5 for for substrate 100 heating while also for supporting substrates 100.
The embodiment of magnetron sputtering equipment of the present invention, wherein, multiple heating support bar 5 is connected with thermoregulation mechanism respectively.Heating support bar 5 is electric heater unit.Thermoregulation mechanism is for regulating the temperature of heating support bar 5.
Embodiment three
As shown in Figure 3, Figure 4, the embodiment of magnetron sputtering equipment of the present invention, comprise film forming chamber 10 ' and be arranged at the target 1 ' of inside of film forming chamber 10 ', target 1 ' is for multiple, multiple target 1 ' arranges and forms queue 11 ', and the inside of film forming chamber 10 ' is provided with three heating unit 30 for for substrate 100 heat relative with queue 11 '.
3rd heating unit 30 is hot-plate.3rd heating unit 30 comprises multiple heater strip 31 be arranged in parallel, has space between multiple heater strip 31, and multiple heater strip 31 is corresponding with the gap between target 1 '.
Preferably, heater strip 31 is parallel with target 1 '.
In magnetron sputtering equipment of the present invention, the gap of secondary heating mechanism or the 3rd between heating unit with target is corresponding, so at work, by secondary heating mechanism or the 3rd heating unit can be more convenient adjustment substrate on the rate of film build in corresponding region, to improve film forming inequality.Namely secondary heating mechanism or the 3rd heating unit is utilized to make formation temperature on substrate uneven, on substrate, the temperature spread of different zones can cause atom on substrate, be different from the attachment speed difference in region, the rate of film build in different zones on substrate (particularly corresponding with the gap between target on substrate region) just can be adjusted like this, to improve film forming inequality by adjustment secondary heating mechanism or the 3rd heating unit.
Such as, in practical work, utilize secondary heating mechanism or the 3rd heating unit that the temperature in the region corresponding with the gap between target on substrate is raised, the attachment speed in these regions of such atom on substrate, compensate for these regions thus due to corresponding with the gap between target and the one-tenth film density that causes not enough, ensure that substrate surface all regions film forming uniformity.
Magnetron sputtering equipment of the present invention, structure is simple, can effectively prevent substrate surface film forming uneven.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. a magnetron sputtering equipment, comprise film forming chamber and be arranged at the target of inside of described film forming chamber, described target is multiple, multiple target arrangement forms queue, the inside of described film forming chamber is provided with relative to described queue the first heater for base plate heating, it is characterized in that, the inside of described film forming chamber is provided with the corresponding secondary heating mechanism in gap between target;
The inside of described film forming chamber is provided with the substrate installation region for installation base plate, and described substrate installation region is between described first heater and described queue, and described secondary heating mechanism is between described substrate installation region and first heater.
2. magnetron sputtering equipment according to claim 1, is characterized in that, described secondary heating mechanism is multiple heating rods be arranged in parallel, and multiple described heating rod is corresponding with the gap between described target respectively.
3. magnetron sputtering equipment according to claim 2, is characterized in that, multiple described heating rod is connected with thermoregulation mechanism respectively.
4. magnetron sputtering equipment according to claim 1, it is characterized in that, the support framework for support substrate is provided with between described substrate installation region and first heater, described secondary heating mechanism is multiple heating support bars be arranged in parallel, and multiple described heating support bar is arranged on support framework also corresponding with the gap between described target respectively.
5. magnetron sputtering equipment according to claim 4, is characterized in that, multiple described heating support bar is connected with thermoregulation mechanism respectively.
6. a magnetron sputtering equipment, comprise film forming chamber and be arranged at the target of inside of described film forming chamber, described target is multiple, multiple target arrangement forms queue, it is characterized in that, the inside of described film forming chamber is provided with relative to described queue the 3rd heating unit for base plate heating, and described 3rd heating unit comprises multiple heater strip be arranged in parallel, have space between multiple described heater strip, described multiple heater strip is corresponding with the gap between target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410126503.3A CN103924201B (en) | 2014-03-31 | 2014-03-31 | Magnetron sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410126503.3A CN103924201B (en) | 2014-03-31 | 2014-03-31 | Magnetron sputtering equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103924201A CN103924201A (en) | 2014-07-16 |
| CN103924201B true CN103924201B (en) | 2016-03-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410126503.3A Expired - Fee Related CN103924201B (en) | 2014-03-31 | 2014-03-31 | Magnetron sputtering equipment |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008214687A (en) * | 2007-03-02 | 2008-09-18 | Toppan Printing Co Ltd | Film deposition method, sputtering system, sputtering target, and manufacturing method of organic electroluminescent apparatus |
| CN102187007A (en) * | 2008-10-16 | 2011-09-14 | 株式会社爱发科 | Sputtering apparatus, thin film forming method and method for manufacturing field effect transistor |
| CN103124805A (en) * | 2011-06-08 | 2013-05-29 | 株式会社半导体能源研究所 | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
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2014
- 2014-03-31 CN CN201410126503.3A patent/CN103924201B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008214687A (en) * | 2007-03-02 | 2008-09-18 | Toppan Printing Co Ltd | Film deposition method, sputtering system, sputtering target, and manufacturing method of organic electroluminescent apparatus |
| CN102187007A (en) * | 2008-10-16 | 2011-09-14 | 株式会社爱发科 | Sputtering apparatus, thin film forming method and method for manufacturing field effect transistor |
| CN103124805A (en) * | 2011-06-08 | 2013-05-29 | 株式会社半导体能源研究所 | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
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| CN103924201A (en) | 2014-07-16 |
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Granted publication date: 20160330 Termination date: 20200331 |