CN103912807B

CN103912807B - Great power LED photo engine

Info

Publication number: CN103912807B
Application number: CN201410095160.9A
Authority: CN
Inventors: 高鞠
Original assignee: SUZHOU JINGPIN OPTICAL-ELECTRONICAL TECHNOLOGY Co Ltd
Current assignee: Jiaxing Jingxing Lake Electronic Technology Co ltd
Priority date: 2014-03-14
Filing date: 2014-03-14
Publication date: 2016-06-15
Anticipated expiration: 2034-03-14
Also published as: WO2015135247A1; CN103912807A

Abstract

The present invention relates to a kind of great power LED photo engine, belong to the technical field of semiconductor lighting, described photo engine includes LED light source, metal basal board, electric power driving module and rectification module; Being formed with multiple resin insulating barrier and multiple high heat conductive insulating layer on described metal basal board, and be formed with metal pattern circuit on described resin insulating barrier, described high heat conductive insulating layer is formed with LED light source, rectification module or electric power driving module. The present invention is by arranging the insulating barrier of different heat conductivity and unlike material on metallic substrates, it is possible to configures according to the position of LED light source and rectification module etc., size and power and is distributed, it is possible to realize the heat radiation optimized; Additionally by integrally disposed to LED light source and the rectification module optoelectronic integration that not only achieves on the same substrate, and it is also beneficial to the efficiency of integrated light source, and improves reliability.

Description

Great power LED photo engine

Technical field

The invention belongs to the technical field of semiconductor lighting, more particularly, it relates to one is easy to high efficiency and heat radiation and is applied to great power LED photo engine.

Background technology

Owing to light emitting diode has little power consumption, energy conversion efficiency height, life-span length and does not result in the advantageous characteristic such as mercury pollution, make light emitting diode become replace traditional lighting first-selection, its also because have energy-saving and environmental protection, etc. the unrivaled advantage of conventional light source and obtain unprecedented development. Great power LED solid-state illumination is to have continued since electric filament lamp invention, and most important illumination revolution has maximum from conventional illumination sources different, and luminous efficiency is high, and energy consumption is only ordinary incandescent lamp 1/8th; Have been widely used for street lighting, industrial and mineral and public place etc. at present.

Along with the increase of LED current intensity and luminous quantity, the caloric value of LED chip also rises therewith, and for high-capacity LED, the 80% of input energy sources all consumes with the form of heat. If being derived by the heat that chip sends not in time and dissipating, substantial amounts of heat will accumulate in inside LED, will result in the temperature-rise effect of chip, and the luminous efficiency of LED will sharply decline, and life and reliability also will be had a greatly reduced quality; Additionally high temperature high heat will make LED encapsulation structure internal generation mechanical stress, it is also possible to causes quality problems. Therefore improving constantly along with the power density of single great power LED, the design to high-power LED encapsulation material and structure, also it is increasingly becoming a huge challenge of field of semiconductor illumination.

The LED of single more than 3W generally can adopt metal base printed circuit board as circuit and heat-radiating substrate at present.Existing metal base printed circuit is owing to adopting metal basal board (copper base or aluminium base), and the thermal conductivity common FR4 printed circuit board (PCB) that below 1W LED adopts than before mutually has had bigger lifting. But, although aluminium base even copper base has good thermal conductivity, respectively up to 205W/mK and 380W/mK, but due to the restriction of the needs of electric insulation and preparation technology, between current metal base printed circuit board circuit layer and metal basal board, there is a layer insulating. Along with improving constantly of current LED package level, large size chip and multi-chip package get more and more, power consumption is more and more higher, carrier substrate is proposed higher cooling requirements, existing metal base printed circuit board has occurred in that many problems in the application, and wherein a topmost reason is just because heat radiation and insufficient causes LED failure. LED in use can be converted into heat energy due to the energy consumption of 70～90%, as do not distributed by heat in time, it will causes that LED joint temperature is too high, causes luminous efficiency to decline, reduce LED life, more likely directly burn chip time serious.

In order to reach to improve the power load of metal basal board, reduce volume, life-saving and improve output and increase reliability, one trend of LED lamp development is exactly by LED chip and drives power module to be integrated into a substrate, but integrated component on one substrate, although be conducive to improving integration density, luminous efficiency and raising total brightness in theory, but also more exacerbate heat dissipation problem simultaneously, become the bottleneck of restriction LED lamp technical development.

Summary of the invention

In order to solve above-mentioned technical problem, it is an object of the invention to provide a kind of great power LED photo engine. Adopt great power LED photo engine not only advantage of lower cost of the present invention and also have high thermal conductivity, ageing-resistant, resist and wear and the advantage of dependable performance.

Great power LED photo engine of the present invention, including LED light source, metal basal board, electric power driving module and rectification module; It is characterized in that: being formed with multiple resin insulating barrier and multiple high heat conductive insulating layer on described metal basal board, and be formed with metal pattern circuit on described resin insulating barrier, described high heat conductive insulating layer is formed with LED light source, rectification module or electric power driving module; Described metal pattern circuit, LED light source, it is electrically connected by plain conductor between rectification module and power module.

Wherein, it is disposed adjacent between described resin insulating barrier or interval is arranged; Adjacent or interval setting between described high heat conductive insulating layer; It is disposed adjacent between described resin insulating barrier and described high heat conductive insulating layer or interval is arranged.

Wherein, the form of described LED light source can be packaged lamp bead, cob module or chip; It can by common welding, wave soldering, reflow soldering or eutectic solder bond on high heat conductive insulating layer.

Wherein, along the light direction of described LED light source, described metal basal board is additionally provided with secondary optics module, for instance lens or pellicle mirror. And described secondary optics module can be arranged on described metal basal board by the mode of mechanical erection, bonding or pressing.

Wherein, described rectification module or electric power driving module can by common welding, wave soldering, reflow soldering or eutectic solder bond on high heat conductive insulating layers.

Wherein, it is additionally provided with the metal heat sink with radiating fin bottom described metal basal board. Described metal heat sink can be arranged on the bottom of described metal basal board by the mode of mechanical erection, bonding or welding.

Wherein, described metal basal board is made by selected from aluminum, copper, nickel, ferrum, gold, silver, titanium, molybdenum, silicon, magnesium, lead, stannum, indium, gallium or their alloy material.

Wherein, described metal basal board is made up of aluminum, copper, aluminium alloy or copper alloy.

Wherein, described metal basal board is made up of the steel being plated with aluminum or copper, described steel one in mild steel, heat-resisting steel or stainless steel.

Wherein, described metallic matrix is through surface treatment procedure, and described surface treatment procedure comprises any one or a few in roughening treatment, pickling, acid etching, alkali cleaning or alkaline etching operation.

Wherein, described metal base surface is formed with metal or nonmetal transition zone.

Wherein, described metal base surface forms anode oxide film or insullac rete in its surface through surface treatment.

Wherein, the heat conductivity of described high heat conductive insulating layer range for 30～500W/mK, it is preferred to 50～500W/mK.

Wherein, the thickness of described high heat conductive insulating layer is 20～1000 μm, it is preferred to 20～500 μm.

Wherein, described high heat conductive insulating layer is made up of ceramic material or nonmetal monocrystal material.

Wherein, one or more in zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride of described ceramic material.

Wherein, described ceramic material is by sintering or vacuum coating method formation, and described vacuum coating method heats the one in evaporation, flicker evaporation, electron beam evaporation, laser evaporation, arc evaporation, radio frequency heating evaporation, aura d.c. sputtering, magnetron sputtering, radio-frequency sputtering, ion beam sputtering, reactive sputtering, ion plating or chemical gaseous phase depositing process selected from resistance.

Wherein, the power of single LEDs is more than 1W, it is preferred to more than 3W, more preferably more than 5W.

Wherein, the thermal conductivity of described resin insulating barrier is more than 0.5W/mK, it is preferable that thermal conductivity is more than 1.0W/mK, for instance 1.0～30W/mK.

Wherein, the thickness of described resin insulating barrier is 20～1000 μm, it is preferable that thickness range is 20～500 μm.

Wherein, described resin insulating barrier is the resin cured matter containing thermosetting resin and firming agent.

Wherein, described resin insulating barrier is the resin cured matter containing thermosetting resin, firming agent and inorganic filler.

Wherein, described thermosetting resin one in epoxy resin, organic siliconresin, phenolic resin or imide resin.

Wherein, one or more in silicon dioxide, aluminium oxide, aluminium nitride, silicon nitride or boron nitride of described inorganic filler.

Compared with prior art, technical scheme has the advantages that

The present invention is by arranging the insulating barrier of different heat conductivity and unlike material on metallic substrates, it is possible to configures according to the position of LED light source and rectification module etc., size and power and is distributed, it is possible to realize the heat radiation optimized; Additionally by integrally disposed to LED light source and the rectification module optoelectronic integration that not only achieves on the same substrate, and it is also beneficial to the efficiency of integrated light source, and improves reliability. In addition the present invention is also by the process to metal basal board, the high pressure resistant insulating barrier punctured can be formed on the surface of metal basal board, the anodised aluminium thin layer of such as special handling or organic insulation thin layer, further increase the high pressure resistant breakdown performance of encapsulating structure, it is achieved thereby that the more high brightness of LED.

Accompanying drawing explanation

Fig. 1 is the structural representation of great power LED photo engine of the present invention.

Fig. 2 is great power LED photo engine upper surface distribution schematic diagram of the present invention.

Detailed description of the invention

The great power LED photo engine of the present invention, including LED light source, metal basal board, electric power driving module and rectification module; Being formed with multiple resin insulating barrier and multiple high heat conductive insulating layer on described metal basal board, and be formed with metal pattern circuit on described resin insulating barrier, described high heat conductive insulating layer is formed with LED light source, rectification module or electric power driving module; Described metal pattern circuit, LED light source, it is electrically connected by plain conductor between rectification module and power module. Described electric power driving module is for by the input of alternating current power supply, and described rectification module is for being converted into galvanic current source by the alternating current power supply of input. The form of described LED light source can be packaged lamp bead, cob module or chip; It can by common welding, wave soldering, reflow soldering or eutectic solder bond on high heat conductive insulating layer. The power of single LEDs power supply is more than 5W in the present invention, it is preferred to more than 10W, more preferably more than 50W. And, along the light direction of described LED light source, described metal basal board is additionally provided with secondary optics module, for instance lens or pellicle mirror. The metal heat sink with radiating fin it is additionally provided with bottom described metal basal board. Described metal heat sink can be arranged on the bottom of described metal basal board by the mode of mechanical erection, bonding or welding. And described secondary optics module can be arranged on described metal basal board by the mode of mechanical erection, bonding or pressing. In the present invention, according to involving a need to, for instance the layout form according to LED light source, the facilities of rectification module, can be disposed adjacent between described resin insulating barrier or interval is arranged; Can adjacent or interval arrange between described high heat conductive insulating layer; Can be disposed adjacent between described resin insulating barrier and described high heat conductive insulating layer or interval is arranged. Described rectification module or electric power driving module can by common welding, wave soldering, reflow soldering or eutectic solder bond on high heat conductive insulating layers.

In the present invention, described metal basal board can be made by selected from aluminum, copper, nickel, ferrum, gold, silver, titanium, molybdenum, silicon, magnesium, lead, stannum, indium, gallium or their alloy material. As preferably, described metal basal board is made up of aluminum, copper, aluminium alloy or copper alloy, certainly, the metal basal board in order to obtain having good rigidity can also use the steel being plated with aluminum or copper as metal basal board, and described steel can select mild steel, heat-resisting steel or stainless steel. Described substrate is preferably used aluminum or aluminum alloy in the present invention, the preferred aluminium alloy without intermetallic compound as aluminium alloy. It is preferably that impurity is few, the aluminum of the purity of more than 99 mass % specifically. For example, it is preferable to Al, 99.0%Al etc. of 99.99wt%. Or, it is possible to add the element being not likely to produce intermetallic compound. Such as can add the almag of appropriate magnesium. Except magnesium, the addition element that also the optional solid solubility limit such as copper or silicon is high.

As preferably, described metallic matrix is through surface treatment procedure, and described surface treatment procedure can comprise any one or a few that described surface treatment procedure comprises in roughening treatment, pickling, acid etching, alkali cleaning or alkaline etching operation. As being used for being formed the exemplary process of coarse surface, it is possible to enumerate metal basal board is implemented successively the roughened process of mechanicalness, alkaline etching processes, adopt the cleaning treatment of acid and employ the method such as the roughened process of electrochemistry of electrolyte;Metal basal board is implemented repeatedly the roughened process of mechanicalness, alkaline etching processes, adopt the dirty removing processing of acid and employ the method for the roughened process of electrochemistry of different electrolyte; But the present invention is not limited to these. Can being mineral acid and/or organic acid as acid, described mineral acid can be such as sulphuric acid, hydrochloric acid, nitric acid, phosphoric acid etc.; Described organic acids is as being carboxylic acid or sulfonic acid, for instance formic acid, acetic acid, tartaric acid, oxalic acid, malic acid, ascorbic acid and benzoic acid etc. Can be such as alkali-metal hydroxide as conventional alkali, for instance sodium hydroxide or potassium hydroxide, additionally can also use the organic base such as Tetramethylammonium hydroxide, trimethyl (ethoxy) ammonium hydroxide. In order to reduce the etch quantity of metal matrix material in pickling or alkaline etching processing procedure, described aqueous slkali or acid solution can contain anticorrodent, additionally can contain other component such as surfactant and chelating agen. Additionally, described surface treatment, it is also possible to it is the organic film of anodic alumina films or the electric insulation forming electric insulation at described metal base surface, thus improving the high pressure resistant breakdown strength of described metallic matrix.

LED described in the present invention can be all kinds, for instance can be formed by the PN junction (III-V quasiconductor) of one or more group-III element He one or more V group elements. Can be used for the example of the III-V semi-conducting material of LED to include: nitride, such as gallium nitride or InGaN; And phosphide such as InGaP. Other type of III-V material can also be used, it is also possible to use the inorganic material of other race. Additionally, described LED light source also includes with fluorescent powder packaging or the LED relevant to fluorescent material in the present invention, wherein, LED the light sent is changed into the light of different wave length by fluorescent material. And described LED can be top light emitting, or LED can be lateral emitting, for instance the LED disclosed in US2004/233665A1. In the present invention, as required, within the scope of prior art, described LED can be chosen as and launch with any required wavelength, as launched in red, green, blue, ultraviolet or far-infrared spectrum district. In LED array, each LED can launch in same spectral regions, or can launch in different spectral regions. Different LED can be used to produce different colors, and wherein, light-emitting component the color of the light launched is selectable. The color individually controlling to cause controlling the light of transmitting to different LED. If it addition, need white light, then can providing a large amount of LED launching different colours light, the effect of its combination is that to launch that beholder is perceived by be the light of white. The other method producing white light is to use one or more to launch the LED of the light of relatively short wavelength, and uses phosphor wavelength converter that the light of transmitting is converted to white light. White light is that the photoreceptor stimulating human eye is to produce the light that average viewer thinks the outward appearance of " white ". This white light can be warm white light) or be cool white coloured light.

In the present invention, as the described high heat conductive insulating layer in the present invention heat conductivity range for 30～500W/mK, as preferably, the heat conductivity of described high heat conductive insulating layer range for 50～500W/mK. The thickness of described high heat conductive insulating layer is preferably 20～1000 μm, it is more preferred to, its thickness range is 20～500 μm.Described high heat conductive insulating layer can be made up of ceramic material or nonmetal monocrystal material, can select as ceramic material but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride. Ceramic material described in the present invention can pass through cut the ceramic wafer fired and be welded on metal basal board of the present invention, and described welding method can be such as the method for soldering, for instance solder, solder brazing or active soldering etc. Ceramic material described in the present invention can also be prepared by original position forming method, for instance passes through vacuum coating method, for instance conventional physical gas-phase deposite method or chemical gaseous phase depositing process prepare. Example as physical vapour deposition (PVD) is such as deposited with, sputters or ion-plating deposition method. Wherein, vacuum evaporation deposition has that simple and easy, processing ease, film forming speed be fast and efficiency advantages of higher, is most widely used technique in film preparation. Its principle is under vacuum conditions, to material to be evaporated, for instance the ceramic material in the present invention provides enough heats to evaporate necessary vapour pressure to obtain. At a proper temperature, evaporation particle condenses on metallic matrix, so both can realize vacuum evaporation thin film deposition. Example as evaporation such as can select resistance heating evaporation, flicker evaporation, electron beam evaporation, laser evaporation, arc evaporation or radio frequency heating evaporation etc. Sputtering refers to that having enough high-octane ion bom bardment target material surface makes atomic emissions therein out, sputter procedure actually incoming particle (being generally ion) is by colliding with target, carry out the process of a series of energy exchange, and the 95% of projectile energy for encouraging lattice thermal vibration in target, only the energy of about 5% is to pass to sputtered atom. Example as sputtering sedimentation such as passes through, by medium-high frequency magnetron sputtering ceramic target and be deposited in described metallic substrate surfaces, the thin film that sputtering obtains and matrix are well combined, and thin film purity is higher, compactness is better, and thickness is controlled, it is possible to obtain thin film in uniform thickness. Example as sputtering sedimentation such as can select aura d.c. sputtering, magnetron sputtering, radio-frequency sputtering, ion beam sputtering, reactive sputtering etc. Described ceramic material obtains it addition, can also pass through ion electroplating method deposition. Ion plating refers under vacuum, utilizes gas discharge to make gas or by evaporant partial ionization, produces ion bombardment effects, and evaporant or reactant are deposited on substrate the most at last. General chemical gaseous phase depositing process or plasma enhanced chemical vapor deposition method such as can be adopted as chemical gaseous phase depositing process.

In the present invention, thermal conductivity is more than 0.5W/mK, it is more preferred to, its thermal conductivity is more than 1.0W/mK, for instance can be the scope of 0.5～30W/mK. So heat produced by metal conductive patterns layer and solder joint and metal connection can be spread fully. The thickness of described resin insulating barrier is preferably 20～1000 μm, it is more preferred to, its thickness range is 20～500 μm. Because thickness is if less than 20 μm, then electrical insulating property becomes insufficient, and if greater than 500 μm, then thermal diffusivity may be impaired, and when especially thickness is more than 1000 μm, heat dispersion will significantly reduce. And described resin insulating barrier is the resin cured matter containing thermosetting resin and firming agent.As preferably, described resin insulating barrier is the resin cured matter containing thermosetting resin, firming agent and inorganic filler. Additionally, formed in the hardening resin composition of insulating barrier being used for, it is also possible to catalyst, silane coupling agent, metatitanic acid lipid coupling agent, stabilizer and curing accelerator etc. can also be used as required.

As thermosetting resin, for instance epoxy resin, organic siliconresin, phenolic resin and imide resin etc. can be selected. Consider epoxy resin is preferably used from the angle of heat conductivity. And as epoxy resin, the difunctionality epoxy resin that can relatively inexpensively obtain is preferably used, as, bisphenol A diglycidyl ether, Bisphenol F diglycidyl ether, bisphenol-S diglycidyl ether, resorcinolformaldehyde resin, hexahydro bisphenol A diglycidyl ether, polypropylene glycol diglycidyl ether, neopentylglycol diglycidyl ether, o-phthalic acid diglycidyl ester, dimer acid diglycidyl ester etc.

As firming agent, it is preferred to use have the engineering properties of excellence and the anhydrides of electrical property or a phenol, and in order to ensure the engineering properties of insulating barrier and dielectric property, it is preferable that add polyaddition type firming agent. As polyaddition type firming agent, the anhydrides or phenol that can relatively inexpensively obtain are preferably used, anhydrides includes phthalic anhydride, tetrahydrochysene methyl nadic anhydride, hexahydrophthalic anhydride, trimellitic anhydride, methyl norbornene dioic anhydride etc., and phenol includes linear phenol-aldehyde resin, o-cresol phenolic resin, Bisphenol-A type linear phenolic resin etc.

Additionally, in order to promote described thermosetting and the curing reaction of polyaddition type firming agent, it is possible to add catalyst. As catalyst, preferred imidazoles, as 2-methylimidazole, 2-undecyl imidazole, 2-heptadecyl imidazole, 1,2-methylimidazole, 2-methyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1 benzyl 2 methyl imidazole, 1-benzyl-2-phenylimidazole, 2,3-dihydro-1H-pyrrolo-[1,2-a] benzimidazole, 2-phenyl-4,5-hydroxymethyl-imidazole etc., it is possible to arbitrarily change its addition to obtain desired curing rate.

The chloride ion concentration constituted in the thermosetting resin of insulating barrier is preferably at below 1000ppm, because if the chloride ion concentration in compositions of thermosetting resin is at below 1000ppm, then can suppress the decline of the electrical insulating property caused because of the migration of the ionic impurity under high temperature or under DC voltage.

As inorganic filler, it is preferable that there is electrical insulating property and the good inorganic filler of heat conductivity, for instance silicon dioxide, aluminium oxide, aluminium nitride, silicon nitride, boron nitride etc. can be used. For keeping suitable mobility, the content of the inorganic filler in insulating barrier preferably 5～15wt%. The granularity of inorganic filler is preferably and comprises two kinds of granularities that mean diameter is 0.6 μm～2.4 μm and 5 μm～20 μm. By by less to corase particles bigger for mean diameter and mean diameter micropartical mixing, compared with when being used alone each microgranule, it may be achieved more fill, it is possible to obtain good heat conductivity. Additionally, shape of particle can be pulverize, spherical or lepidiod.

In the present invention, described metal pattern circuit can pass through to utilize the methods such as silk screen printing to carry out pattern printing on metallic substrates in the hardening resin composition slurry being used for being formed insulating barrier, after forming semi-cured state after heating, paste metal forming, afterwards, it is heated, the method forming substantially fully cured state;Or use the lamellar that in advance insulating barrier is processed into semi-cured state, utilize hot-press arrangement to make its method etc. integrated with the metal forming for forming metal pattern circuit. Forming method as metal pattern circuit, for instance after predetermined portion painting erosion resistant agent layer on metal foil in advance can be used to make it solidify, utilize wet etching or dry-etching method to corrode, for instance to utilize the dry etching process that sputter gas carries out.

As shown in accompanying drawing 1-2, a typical example (but the scope that protection scope of the present invention limits with the claim checked and approved is as the criterion) for great power LED photo engine of the present invention, described great power LED photo engine, including metal basal board 10, LED light source 41, electric power driving module 42 and rectification module 43; Described metal basal board 10 is formed multiple resin insulating barrier 20 and multiple high heat conductive insulating layer 30, and being formed with metal pattern circuit on described resin insulating barrier 20, described high heat conductive insulating layer 30 is formed with LED light source 41, rectification module 43 or electric power driving module 42; Described metal pattern circuit, LED light source, it is electrically connected by plain conductor between rectification module and power module. Described electric power driving module is for by the input of alternating current power supply, and described rectification module is for being converted into galvanic current source by the alternating current power supply of input. The form of described LED light source can be packaged lamp bead, cob module or chip; It can by common welding, wave soldering, reflow soldering or eutectic solder bond on high heat conductive insulating layer. The power of single LEDs is more than 1W in the present invention, it is preferred to more than 3W, more preferably more than 5W. And, along the light direction of described LED light source, described metal basal board being additionally provided with secondary optics module 50, for instance lens or pellicle mirror, described secondary optics module can be arranged on described metal basal board by the mode of mechanical erection, bonding or pressing. The metal heat sink 60 with radiating fin it is additionally provided with bottom described metal basal board. Described metal heat sink can be fixed on the bottom of described metal basal board by adhesive tape.

Metal basal board and anodic alumina films

Described metal basal board is chosen as at the bottom of aluminum plate foundation in the present embodiment, for instance the fine aluminium of 99.99wt%, and at the bottom of at described aluminum plate foundation on be formed with anodic alumina films; Thickness at the bottom of described aluminum plate foundation is 2～20mm, and the thickness of anodic alumina films is 10～20 μm; The insulation endurance of described anodic alumina films more than 1000 hours, described insulation endurance refer to 50 DEG C, 85%RH when on anodic alumina films, apply the DC voltage of 100V, and resistance value is dropped to 10⁶The time of below Ω. The preparation method of described anode oxide film is as follows: first aluminium sheet is carried out and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20～35g/L, the DL-cysteine of 3～5g/L, the hydrogen peroxide of 0.5～1.0g/L, the aluminium citrate of 3～5g/L; Liquid temperature be 10～20 DEG C, electric current density be 0.5～1A/dm², electrolytic treatments 20～30min. Adopt above-mentioned anode oxidation method, owing to adopting citric acid as processing solution, and with the addition of appropriate hydrogen peroxide and DL-cysteine wherein, enable to aluminum ions in liberal supply when anodized, it is thus possible to obtain the anodic alumina films of densification, thickness be 10 μm and above when, even without sealing pores can meet insulation the endurance requirement more than 1000 hours.

Embodiment 1

The preparation method of the anode oxide film described in the present embodiment is as follows: first aluminium sheet is carried out and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 20g/L, the DL-cysteine of 3g/L, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 3g/L; Liquid temperature be 10 DEG C, electric current density be 1A/dm², electrolytic treatments 20min. The dense anodic oxide aluminum film insulation endurance obtained was more than 1000 hours.

Embodiment 2

The preparation method of the anode oxide film described in the present embodiment is as follows: first aluminium sheet is carried out and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 30g/L, the DL-cysteine of 4g/L, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L; Liquid temperature be 20 DEG C, electric current density be 1A/dm², electrolytic treatments 20min. The dense anodic oxide aluminum film insulation endurance obtained was more than 1000 hours.

Embodiment 3

The preparation method of the anode oxide film described in the present embodiment is as follows: first aluminium sheet is carried out and scale removal, then in aqueous citric acid solution, carry out anodized, described aqueous citric acid solution contains: the citric acid of 35g/L, the DL-cysteine of 5g/L, the hydrogen peroxide of 1.0g/L, the aluminium citrate of 5g/L; Liquid temperature be 10 DEG C, electric current density be 1A/dm², electrolytic treatments 30min. The dense anodic oxide aluminum film insulation endurance obtained was more than 1500 hours.

Comparative example 1

Aluminium sheet is carried out pickling descaling, in oxalic acid solution, then carries out anodized, described oxalic acid solution contains the oxalic acid of 35g/L, the oxalic acid aluminum of 5g/L; Liquid temperature be 20 DEG C, electric current density be 1A/dm², electrolytic treatments 30min; Then in boric acid aqueous solution, carry out sealing treatment, described boric acid aqueous solution contains the boric acid of 0.5mol/L and the sodium tetraborate of 0.2mol/L; Sealing of hole condition is liquid temperature 20 DEG C, electric current density 1A/dm², electrolytic processing time 5 minutes, its insulation endurance is 300～500 hours.

Comparative example 2

Aluminium sheet is carried out pickling descaling, in sulfuric acid solution, then carries out anodized, described sulfuric acid solution contains the oxalic acid of 35g/L, the aluminum sulfate of 5g/L; Liquid temperature be 20 DEG C, electric current density be 1A/dm², electrolytic treatments 30min; Then in boric acid aqueous solution, carry out sealing treatment, described boric acid aqueous solution contains the boric acid of 0.5mol/L and the sodium tetraborate of 0.2mol/L; Sealing of hole condition is liquid temperature 20 DEG C, electric current density 1A/dm², electrolytic processing time 5 minutes, its insulation endurance is 250～400 hours.

High heat conductive insulating layer

In the present invention, the heat conductivity of described high heat conductive insulating layer range for 50～500W/mK. Described high heat conductive insulating layer thickness ranges for 20～500 μm, for instance be 50 μm. Described high heat conductive insulating layer can be made up of ceramic material or nonmetal monocrystal material. Can select as ceramic material but be not limited to zinc oxide, beryllium oxide, aluminium oxide, titanium dioxide, silicon dioxide, silicon nitride, sapphire, aluminium nitride, carborundum, silicon oxynitride or aluminum oxynitride. Ceramic material described in the present invention can pass through cut the ceramic wafer fired and be welded on metal basal board of the present invention, described welding method can be such as the method for soldering, such as solder, solder brazing or active soldering etc., active soldering is preferably used, and the composition of described active soldering such as can select the Si of Al, 3.00wt% of Ti, 2.00wt% of 2.25wt% and the Cu of surplus;Such as can select the Cu of Ti, 32.250wt% of 1.25wt% and the Ag of surplus, such as can select the Cu of In, 27.25wt% of Ti, 12.50wt% of 1.25wt% and the Ag of surplus. in addition, described high heat conductive insulating layer can also adopt evaporation, the method of sputtering plating or reactive ion plating and chemical vapour deposition (CVD) prepares, for example with applying for artificial Suzhou Jing Pin Electro-optical Technology, INC. (US) 62 Martin Road, Concord, Massachusetts 017, publication number is CN103354221A, CN103353065A, CN103354219A, CN103354222A, CN103354698A, CN103354220A, CN103354269A, CN103354697A, CN103354699A, CN103354254A, CN103327736A, CN103327735A, CN103325921A, CN103338588A, or notification number is CN203340413U, CN203339213U, CN203339139U, CN203340409U, CN203340407U, CN203340408U, CN203339224U, CN203336288U, the preparation method recorded in CN203339140U and CN203339145U, and above-mentioned document is documented in this, as reference.

Resin insulating barrier

In the present invention, the thermal conductivity of described resin insulating barrier may be selected to be 0.5～30W/mK, and the thickness range of described resin insulating barrier is preferably 20～500 μm.

Described resin insulating barrier is formed by the hardening resin composition containing thermosetting resin, firming agent and inorganic filler, additionally, formed in the hardening resin composition of insulating barrier being used for, it is also possible to can also use other component etc. as required. Formation condition such as can solidify 30～180 seconds when 160～180 DEG C. As preferably, described hardening resin composition contain the Bisphenol F diglycidyl ether of 55～60wt%, the VTES of 12.5～15.0wt%, the benzene olefin(e) acid-2-hydroxy methacrylate of 8.0～10.0wt%, the TSIM of 3.2～5.0wt%, the phthalic anhydride of 2.5～3.0wt%, 0.5～1.0wt% 2,6-ditertbutylparacresol, and the alumina particulate that mean diameter is 5.0 μm of the alumina particulate that the mean diameter of 3～8wt% is 2.0 μm and 3～8wt%.

Embodiment 4

Hardening resin composition described in the present embodiment contain the Bisphenol F diglycidyl ether of 55wt%, the VTES of 15.0wt%, the benzene olefin(e) acid-2-hydroxy methacrylate of 10.0wt%, the TSIM of 5.0wt%, the phthalic anhydride of 2.5wt%, 1.0wt% 2,6-ditertbutylparacresol, and the alumina particulate that mean diameter is 5.0 μm of the alumina particulate that the mean diameter of 5.5wt% is 2.0 μm and 6.0wt%. When the insulation resin layer thickness of preparation is 50 μm, recording its thermal conductivity is 20～25W/mK.

Embodiment 5

Hardening resin composition described in the present embodiment contain the Bisphenol F diglycidyl ether of 60wt%, the VTES of 12.5wt%, the benzene olefin(e) acid-2-hydroxy methacrylate of 8wt%, the TSIM of 3.2wt%, the phthalic anhydride of 3.0wt%, 1.0wt% 2,6-ditertbutylparacresol, and the alumina particulate that mean diameter is 5.0 μm of the alumina particulate that the mean diameter of 6.3wt% is 2.0 μm and 6.0wt%. When the insulation resin layer thickness of preparation is 50 μm, recording its thermal conductivity is 22～26W/mK.

Embodiment 6

Hardening resin composition described in the present embodiment contain the Bisphenol F diglycidyl ether of 58wt%, the VTES of 15wt%, the benzene olefin(e) acid-2-hydroxy methacrylate of 10wt%, the TSIM of 5wt%, the phthalic anhydride of 3.0wt%, 1.0wt% 2,6-ditertbutylparacresol, and the alumina particulate that mean diameter is 5.0 μm of the alumina particulate that the mean diameter of 4wt% is 2.0 μm and 4wt%.When the insulation resin layer thickness of preparation is 50 μm, recording its thermal conductivity is 18～22W/mK.

Embodiment 7

Hardening resin composition described in the present embodiment contain the Bisphenol F diglycidyl ether of 78wt%, the 2-methylimidazole of 5wt%, the phthalic anhydride of 3.0wt%, 1.0wt% 2,6-ditertbutylparacresol, and the alumina particulate that mean diameter is 5.0 μm of the alumina particulate that the mean diameter of 6.5wt% is 2.0 μm and 6.5wt%. When the insulation resin layer thickness of preparation is 50 μm, recording its thermal conductivity is 15～20W/mK.

Resin insulating barrier described in the present invention, except needing to meet required thermal conductivity, also should have the resistance to thermochromism of excellence. In order to detect the heat-resisting discoloration of above-mentioned hardening resin composition, by described hardening resin composition, at 170 DEG C, 8N/mm²And to be processed into diameter when being 120 seconds be 50mm × thickness be that the disk of 3mm is as sample hardening time, then place 24 hours when 150 DEG C, utilize its resistance to thermochromism of perusal, find that sample described in embodiment 4-6 does not find metachromatism, and the slightly variable color of the sample described in embodiment 7 or there occurs variable color.

Metal pattern circuit

According to actual needs, at described resin insulating barrier, or it is respectively formed on metal pattern circuit at described resin insulating barrier and described high heat conductive insulating layer. Described edge layer can be passed through bond or press Copper Foil and form conductive copper films, or sputtering, chemical plating (needing to activate in advance) formation copper film can be passed through. The thickness of described copper film is such as 2～5 μ m-thick, then on the described copper film of band, coat photoresist, then utilize metal lithographic mask to carry out photoetching on litho machine, form metal pattern circuit then through development, or, adopt the method for silk screen printing directly to form the figure of conductive metal layer; After toasted solidification, then with wet etching process, described aluminium lamination is etched, described metal pattern circuit after etching, can be obtained.

Industrial applicibility

Great power LED photo engine of the present invention, has heat dispersion and the reliability of improvement, can be widely applied for street lighting, industrial and mineral and public place etc. at industrial circle.

For the ordinary skill in the art; the present invention is simply exemplarily described by specific embodiment in conjunction with accompanying drawing; the obvious present invention implements and is not subject to the restrictions described above; as long as have employed the improvement of the various unsubstantialities that the design of the method for the present invention carries out with technical scheme; or the not improved design by the present invention and technical scheme directly apply to other occasion, all within protection scope of the present invention.

Claims

1. a great power LED photo engine, including LED light source, metal basal board, electric power driving module and rectification module; It is characterized in that: described metal basal board is formed multiple resin insulating barrier and multiple high heat conductive insulating layer, and described resin insulating barrier is formed metal pattern circuit, described high heat conductive insulating layer is formed with LED light source, rectification module and electric power driving module; Described metal pattern circuit, LED light source, it is electrically connected by plain conductor between rectification module and electric power driving module; Described metal basal board includes at the bottom of aluminum plate foundation, and at the bottom of at described aluminum plate foundation on be formed with anodic alumina films; Thickness at the bottom of described aluminum plate foundation is 2～20mm, and the thickness of anodic alumina films is 10～20 μm;The insulation endurance of described anodic alumina films more than 1000 hours, described insulation endurance refer to 50 DEG C, 85%RH when on insulated heat-conducting metal substrate, apply the DC voltage of 100V, and resistance value is dropped to 10⁶The time of below Ω.

2. great power LED photo engine according to claim 1, it is characterised in that: the form of described LED light source is the lamp bead of encapsulation, cob module or chip.

3. great power LED photo engine according to claim 1 and 2, it is characterised in that: the power of single LEDs is more than 1W.

4. great power LED photo engine according to claim 2, it is characterised in that: described LED light source by common welding, wave soldering, reflow soldering or eutectic solder bond on described high heat conductive insulating layer.

5. great power LED photo engine according to claim 1, it is characterised in that: described rectification module or electric power driving module by common welding, wave soldering, reflow soldering or eutectic solder bond on high heat conductive insulating layer.

6. great power LED photo engine according to claim 1, it is characterised in that: along the light direction of described LED light source, described metal basal board is additionally provided with secondary optics module.

7. great power LED photo engine according to claim 1, it is characterised in that: it is additionally provided with the metal heat sink with radiating fin bottom described metal basal board.

8. great power LED photo engine according to claim 7, it is characterised in that: described metal heat sink can be arranged on the bottom of described metal basal board by the mode of mechanical erection, bonding or welding.

9. great power LED photo engine according to claim 1, it is characterised in that: it is disposed adjacent between described resin insulating barrier or interval is arranged; Adjacent or interval setting between described high heat conductive insulating layer; It is disposed adjacent between described resin insulating barrier and described high heat conductive insulating layer or interval is arranged.

10. great power LED photo engine according to claim 1, it is characterised in that: described resin insulating barrier is the resin cured matter containing thermosetting resin and firming agent.