CN103910524B - Tin ash piezoresistive material of a kind of rare-earth oxide modified and preparation method thereof - Google Patents
Tin ash piezoresistive material of a kind of rare-earth oxide modified and preparation method thereof Download PDFInfo
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- CN103910524B CN103910524B CN201410076609.7A CN201410076609A CN103910524B CN 103910524 B CN103910524 B CN 103910524B CN 201410076609 A CN201410076609 A CN 201410076609A CN 103910524 B CN103910524 B CN 103910524B
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- 239000000463 material Substances 0.000 title claims abstract description 31
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910001404 rare earth metal oxide Inorganic materials 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims description 10
- 239000011812 mixed powder Substances 0.000 claims abstract description 16
- 238000000498 ball milling Methods 0.000 claims abstract description 15
- 238000005469 granulation Methods 0.000 claims abstract description 15
- 230000003179 granulation Effects 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 12
- 238000002156 mixing Methods 0.000 claims abstract description 8
- 229910000428 cobalt oxide Inorganic materials 0.000 claims abstract description 6
- 239000002994 raw material Substances 0.000 claims abstract description 6
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 3
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910001940 europium oxide Inorganic materials 0.000 claims abstract description 3
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 claims abstract description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 3
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract 2
- 239000000843 powder Substances 0.000 claims description 21
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 20
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 15
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 15
- 235000019422 polyvinyl alcohol Nutrition 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 13
- 229940068984 polyvinyl alcohol Drugs 0.000 claims description 11
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000007767 bonding agent Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229920002635 polyurethane Polymers 0.000 claims description 7
- 239000004814 polyurethane Substances 0.000 claims description 7
- 238000003825 pressing Methods 0.000 claims description 7
- 239000002002 slurry Substances 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 5
- 239000011805 ball Substances 0.000 claims description 4
- 235000015895 biscuits Nutrition 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 3
- 238000011056 performance test Methods 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 11
- 239000011787 zinc oxide Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000007711 solidification Methods 0.000 description 4
- 230000008023 solidification Effects 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a kind of tin ash piezoresistive material of rare-earth oxide modified, raw material by following by mole% mixed powder form: tin ash: 95.0 ~ 99.0%; Cobalt oxide: 0.5 ~ 2.0%; Tantalum pentoxide: 0.05 ~ 1.0%; Chromium oxide: 0 ~ 1.0%; Rare earth oxide cerium oxide: 0.05 ~ 1.0%; Rare earth oxide europium oxide: 0.05 ~ 1.0%; Through mixing and ball milling, granulation, shaping, sintering (sintering temperature: 1250 ~ 1500 DEG C be incubated 3 hours), top electrode, solder taul, encapsulating solidify, obtain piezoresistive material.The performance test of tin ash piezoresistive material prepared by the inventive method is shown, there is with commercial ZnO base voltage sensitive resistor the electrology characteristics such as comparable residual voltage ratio, non linear coefficient, higher electric potential gradient, there is simple microstructure and better stability simultaneously.
Description
Technical field
The present invention relates to a kind of tin ash (SnO of rare-earth oxide modified
2) piezoresistive material and preparation method thereof.
Background technology
Piezoresistive material is the material for making varistor, and varistor is the electronic device very responsive to voltage.In certain temperature and specific voltage range, the rising sharply with the rising of voltage of the electric current of varistor, its resistance value sharply declines with the rising of voltage, has nonlinear wind vibration.Varistor by the absorption of pulse voltage, surge voltage, induced lightening voltage, switching overvoltage, thus protects electronic device, electronic circuit, electronic equipment, power consumption equipment from the impact of abnormal voltage effectively.The operation principle of varistor is: when voltage is normal, varistor is in state of insulation (its resistance is tens to hundreds of megohm), when voltage increases to over pressure sensitive voltage (abnormal pulse voltage, surge voltage, induced lightening voltage, switching overvoltage etc.), varistor can become conducting state (resistance can be below Europe, a little Europe to one) from state of insulation immediately, response time is fast, can up to being several thousand even several Wan An trainings by its electric current moment.When there being abnormal voltage to attack protected device, equipment, varistor can fall a large amount of current absorption within the extremely short time, thus makes electric current that protected device, equipment pass through almost nil.
Most widely used is the zno varistor grown up late 1960s at present.ZnO varistor is because having good I-V nonlinear characteristic and shock-resistant ability and being widely used in the device such as overvoltage protection and surge current absorption.Zno varistor has the features such as non linear coefficient is large, leakage current is little, through-current capability is strong, the response time is fast.The breakdown voltage gradient of now general zinc oxide pressure-sensitive material is generally at 120 ~ 200V/mm, and the key of high-potential gracient material is electrical quantity is difficult to reach application requirement; The high gradient zinc oxide pressure-sensitive material of development excellent properties, or the non-oxide zinc piezoresistive material of development of new, can make device miniaturization, thus can save material resources greatly.
Tin ash (SnO
2) be a kind of n-type semiconductor with rutile structure.Different from the heterogeneous structure of ZnO pressure sensitive complexity, SnO
2only have a kind of phase structure, there is good stability.Only need a small amount of doping, just can significantly improve its voltage-dependent characteristic.Found by doping vario-property research, while raising electric property, SnO
2the electric potential gradient of pressure sensitive improves decades of times by the acceptor doping of minute quantity, and this is that the miniaturization of pressure cell provides necessary condition, SnO
2the thermal conductivity of pressure sensitive is close to the twice into ZnO pressure sensitive, can improve heat dispersion and the life-span of device, when releasing surge current also can not because being heated inequality under the effect of thermal stress cracking destruction.Although SnO
2the pressure-sensitive character of piezoresistive material can have been accomplished with ZnO varistor comparable, but its surge absoption ability is not as good as the latter, mainly because its residual voltage ratio is excessive.Residual voltage ratio has reacted the ability of piezo-resistance over-voltage, and show the non-linear to voltage characteristic of material in big current region, generally residual voltage ratio answers <3, the smaller the better.The residual voltage ratio of the business ZnO varistor of general use is about 1.7, and most of SnO
2piezo-resistance rarely has the report to its residual voltage ratio.Although also have high-potential gracient SnO in the recent period
2the non-linear electric Quality Research of piezo-resistance, but but not to the report of its residual voltage ratio.The present inventor is in earlier stage to rare earth oxide La
2o
3, Pr
2o
3, Dy
2o
3, Er
2o
3modification high-potential gracient SnO
2piezo-resistance research finds that rare earth oxide can improve SnO
2the electric potential gradient (can 1000V/mm be reached) of piezo-resistance, but residual voltage ratio is but far longer than 3, can not meet the demand of practical application.
Summary of the invention
For the deficiencies in the prior art, the object of the present invention is to provide tin ash piezoresistive material of a kind of novel rare-earth oxide modifying and preparation method thereof, the tin ash piezoresistive material of this rare-earth oxide modified high-potential gracient, its component is simple, and doped with rare-earth elements easily carries out controllable precise, there is non linear coefficient high, breakdown voltage gradient is high, and leakage current is little, and residual voltage ratio is low, the advantages such as comprehensive electrical function admirable, are applicable to being applied to the equipment such as household electrical appliance and high-voltage arrester.
For achieving the above object, the present invention adopts following technical scheme:
A tin ash piezoresistive material for rare-earth oxide modified, its raw material by following by mole% mixed powder form:
Tin ash (SnO
2): 95.0 ~ 99.0%; Cobalt oxide (CoO): 0.5 ~ 2.0%; Tantalum pentoxide (Ta
2o
5): 0.05 ~ 1.0%; Chromium oxide (Cr
2o
3): 0 ~ 1.0%; Rare earth oxide cerium oxide (CeO
2): 0.05 ~ 1.0%; Rare earth oxide europium oxide (Eu
2o
3): 0.05 ~ 1.0%.
The preparation method of the tin ash piezoresistive material of described rare-earth oxide modified, comprises the following steps:
(1) mixed powder is taken according to the molar percentage of raw material components;
(2) alleged mixed powder, zirconia ball and deionized water are mixed in polyurethane ball-milling pot, wherein the mass ratio of mixed powder, zirconia ball and deionized water is 2:6:3, on ball mill mix, levigate, Ball-milling Time is 8 ~ 24 hours;
(3) insert in drying box by the slurry of levigate mixing, dry, baking temperature is 100 ~ 150 DEG C, and drying time is 5 ~ 10 hours;
(4) in the powder of drying, the PVA(polyvinyl alcohol that mass fraction is 5% is added) solution is as bonding agent, and the ratio of powder and poly-vinyl alcohol solution is 20:1, and unit is g/mL, crosses 60-140 mesh sieve, granulation;
(5) dry-pressing formed in a mold to the powder after granulation;
(6) sinter tin ash piezoresistive material biscuit, sintering temperature is 1250 ~ 1500 DEG C, is incubated 3 hours;
(7) carry out silver-colored to tin ash piezo-resistance sintered body, make electrode, silver electrode is welded lead-in wire, then encapsulating solidification and test.
The preparation method of the low residual voltage ratio pressure-sensitive ceramic material based on tin ash that the present invention proposes, by SnO
2composite mixed CoO, Ta
2o
5, Cr
2o
3, CeO
2and Eu
2o
3, by ceramic preparation technique, obtained SnO
2the residual voltage ratio of piezoresistive material is 1.8 ~ 2.5, and non linear coefficient is 20 ~ 50, and voltage gradient is 450 ~ 1000V/mm, Universal electric function admirable.The performance test of tin ash piezoresistive material prepared by the inventive method is shown, with the SnO had been reported
2the electrical characteristics such as piezoresistive material is compared, and has electric potential gradient high, and residual voltage ratio is low, and non linear coefficient is high.Compared with commercial ZnO base voltage sensitive resistor, there is the electrology characteristics such as comparable residual voltage ratio, electric potential gradient that non linear coefficient is higher, there is simple microstructure and better stability simultaneously.
Accompanying drawing explanation
Fig. 1 is that the non-linear electric character J-E of tin ash piezoresistive material obtained by the embodiment of the present invention 1 schemes.
Embodiment
The present invention is further illustrated in conjunction with the embodiments, should be noted that following explanation is only to explain the present invention, not limits its content.
Embodiment 1
Take the SnO of 98.2mol% in molar ratio
2, the Ta of the CoO of 1.0mol%, 0.05mol%
2o
5, the Cr of 0.05mol%
2o
3, the CeO of 0.35mol%
2with the Eu of 0.35mol%
2o
3;
Be 2:6:3 in mass ratio by taken mixed powder and zirconia ball, deionized water, mix in polyurethane ball-milling pot, ball mill mixes, levigate, ball milling 12 hours;
The slurry of levigate mixing is inserted in drying box, at 150 DEG C, dries 5 hours;
In the powder of drying, add the PVA bonding agent that mass fraction is 5%, the ratio of powder and polyvinyl alcohol is 20:1, and unit is g/mL, crosses 100 mesh sieves, granulation;
Dry-pressing formed in a mold to the powder after granulation, sintering, sintering temperature: 1300 DEG C, is incubated 3 hours;
Carry out silver-colored to tin ash piezo-resistance sintered body, make electrode, silver electrode is welded lead-in wire, then encapsulates solidification, make the disk of diameter 12mm.
After tested, its pressure-sensitive electrical quantity: breakdown voltage gradient E is 520V/mm, leakage current J
l(0.75V
lmAunder) being less than 8 μ Α, non linear coefficient α is about 42, and residual voltage ratio is 1.95.
Embodiment 2
Take the SnO of 97.93mol% in molar ratio
2, the Ta of the CoO of 1.0mol%, 0.05mol%
2o
5, the Cr of 0.02mol%
2o
3, the CeO of 0.5mol%
2with the Eu of 0.5mol%
2o
3;
Be 2:6:3 in mass ratio by taken mixed powder and zirconia ball, deionized water, mix in polyurethane ball-milling pot, ball mill mixes, levigate, ball milling 24 hours;
The slurry of levigate mixing is inserted in drying box, at 120 DEG C, dries 8 hours;
In the powder of drying, add the PVA bonding agent that mass fraction is 5%, the ratio of powder and polyvinyl alcohol is 20:1, and unit is g/mL, crosses 60 mesh sieves, granulation;
Dry-pressing formed in a mold to the powder after granulation, sintering, sintering temperature: 1300 DEG C, is incubated 3 hours;
Carry out silver-colored to tin ash piezo-resistance sintered body, make electrode, silver electrode is welded lead-in wire, then encapsulates solidification, make the disk of diameter 12mm.
After tested, its pressure-sensitive electrical quantity: breakdown voltage gradient E is 480V/mm, leakage current J
l(0.75V
lmAunder) being less than 10 μ Α, non linear coefficient is about 45, and residual voltage ratio is 1.85.
Embodiment 3
Take the SnO of 97.4mol% in molar ratio
2, the Ta of the CoO of 1.0mol%, 0.06mol%
2o
5, the Cr of 0.04mol%
2o
3, the CeO of 0.75mol%
2with the Eu of 0.75mol%
2o
3;
Be 2:6:3 in mass ratio by taken mixed powder and zirconia ball, deionized water, mix in polyurethane ball-milling pot, ball mill mixes, levigate, ball milling 8 hours;
The slurry of levigate mixing is inserted in drying box, at 100 DEG C, dries 10 hours;
In the powder of drying, add the PVA bonding agent that mass fraction is 5%, the ratio of powder and poly-vinyl alcohol solution is 20:1, and unit is g/mL, crosses 140 mesh sieves, granulation;
Dry-pressing formed in a mold to the powder after granulation, sintering, sintering temperature: 1300 DEG C, is incubated 3 hours;
Carry out silver-colored to tin ash piezo-resistance sintered body, make electrode, silver electrode is welded lead-in wire, then encapsulates solidification, make the disk of diameter 12mm.
After tested, its pressure-sensitive electrical quantity: breakdown voltage gradient E is 750V/mm, leakage current J
l(0.75V
lmAunder) being less than 10 μ Α, non linear coefficient is 54, and residual voltage ratio is 1.95.
Above-described embodiment is the present invention's preferably execution mode; but embodiments of the present invention are not restricted to the described embodiments; change, the modification done under other any does not deviate from Spirit Essence of the present invention and principle, substitute, combine, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (4)
1. a tin ash piezoresistive material for rare-earth oxide modified, is characterized in that, raw material by following by mole% mixed powder form:
Tin ash: 95.0 ~ 99.0%; Cobalt oxide: 0.5 ~ 2.0%; Tantalum pentoxide: 0.05 ~ 1.0%; Chromium oxide: 0 ~ 1.0%; Rare earth oxide cerium oxide: 0.05 ~ 1.0%; Rare earth oxide europium oxide: 0.05 ~ 1.0%;
Be prepared from by following steps:
(1) mixed powder is taken according to the molar percentage of raw material components;
(2) alleged mixed powder, zirconia ball and deionized water are mixed in polyurethane ball-milling pot, on ball mill mix, levigate, Ball-milling Time is 8 ~ 24 hours;
(3) slurry of levigate mixing is inserted in drying box, dry;
(4) dry powder in add mass fraction be the poly-vinyl alcohol solution of 5% as bonding agent, the ratio of powder and poly-vinyl alcohol solution is 20:1, and unit is g/mL, sieves, granulation;
(5) dry-pressing formed in a mold to the powder after granulation;
(6) sinter tin ash piezoresistive material biscuit, sintering temperature is 1250 ~ 1500 DEG C, is incubated 3 hours;
Wherein in step (2), the mass ratio of mixed powder, zirconia ball and deionized water is 2:6:3.
2. the preparation method of the tin ash piezoresistive material of a kind of rare-earth oxide modified according to claim 1, is characterized in that, comprise the following steps:
(1) mixed powder is taken according to the molar percentage of raw material components;
(2) alleged mixed powder, zirconia ball and deionized water are mixed in polyurethane ball-milling pot, on ball mill mix, levigate, Ball-milling Time is 8 ~ 24 hours;
(3) slurry of levigate mixing is inserted in drying box, dry;
(4) dry powder in add mass fraction be the poly-vinyl alcohol solution of 5% as bonding agent, the ratio of powder and poly-vinyl alcohol solution is 20:1, and unit is g/mL, sieves, granulation;
(5) dry-pressing formed in a mold to the powder after granulation;
(6) sinter tin ash piezoresistive material biscuit, sintering temperature is 1250 ~ 1500 DEG C, is incubated 3 hours;
Wherein in step (2), the mass ratio of mixed powder, zirconia ball and deionized water is 2:6:3.
3. the preparation method of the tin ash piezoresistive material of a kind of rare-earth oxide modified as claimed in claim 2, is characterized in that, in step (3), the temperature of described oven dry is 100 ~ 150 DEG C, and drying time is 5 ~ 10 hours.
4. the preparation method of the tin ash piezoresistive material of a kind of rare-earth oxide modified as claimed in claim 2, is characterized in that, comprise the following steps:
(1) SnO of 97.93mol% is taken in molar ratio
2, the Ta of the CoO of 1.0mol%, 0.05mol%
2o
5, the Cr of 0.02mol%
2o
3, the CeO of 0.5mol%
2with the Eu of 0.5mol%
2o
3;
(2) be 2:6:3 in mass ratio by taken mixed powder and zirconia ball, deionized water, mix in polyurethane ball-milling pot, ball mill mixes, levigate, ball milling 24 hours;
(3) slurry of levigate mixing is inserted in drying box, at 120 DEG C, dry 8 hours;
(4) dry powder in add mass fraction be the poly-vinyl alcohol solution of 5% as bonding agent, the ratio of powder and poly-vinyl alcohol solution is 20:1, and unit is g/mL, cross 60 mesh sieves, granulation;
(5) dry-pressing formed in a mold to the powder after granulation;
(6) tin ash piezoresistive material biscuit is sintered, sintering temperature: 1300 DEG C, be incubated 3 hours.
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|---|---|---|---|
| CN201410076609.7A CN103910524B (en) | 2014-03-04 | 2014-03-04 | Tin ash piezoresistive material of a kind of rare-earth oxide modified and preparation method thereof |
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| CN109704752B (en) * | 2018-11-23 | 2021-07-23 | 新疆大学 | SnO (stannic oxide)2Piezoresistor and preparation method thereof |
| CN110491611A (en) * | 2019-07-24 | 2019-11-22 | 西安西雷脉冲功率研究所有限公司 | A kind of novel high-energy ceramics carbon resistance and preparation method thereof |
| CN114230333A (en) * | 2021-12-24 | 2022-03-25 | 国网浙江省电力有限公司瑞安市供电公司 | Preparation of high-performance SnO2Method for voltage dependent resistor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588568A (en) * | 2004-07-29 | 2005-03-02 | 上海应用技术学院 | Process for preparing antimony blended and rare earth tin oxide composite conductive powder |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588568A (en) * | 2004-07-29 | 2005-03-02 | 上海应用技术学院 | Process for preparing antimony blended and rare earth tin oxide composite conductive powder |
Non-Patent Citations (2)
| Title |
|---|
| CeO2掺杂引起SnO2压敏电阻的晶粒尺寸效应;滕树新 等;《电子元件与材料》;20031130;第22卷(第11期);第31-34页 * |
| Cr2O3对(Co,Ta)掺杂的SnO2压敏电阻电学特性的影响;臧国忠 等;《功能材料与器件学报》;20040331;第10卷(第1期);第79-82页 * |
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