CN103887433A - Organic thin film solar cell and preparation method thereof - Google Patents
Organic thin film solar cell and preparation method thereof Download PDFInfo
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- CN103887433A CN103887433A CN201410121817.4A CN201410121817A CN103887433A CN 103887433 A CN103887433 A CN 103887433A CN 201410121817 A CN201410121817 A CN 201410121817A CN 103887433 A CN103887433 A CN 103887433A
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Abstract
The invention discloses an organic thin film solar cell and a preparation method thereof, and belongs to the field of organic polymer photovoltaic devices or organic semiconductor thin film solar cells. The organic thin film solar cell and the preparation method of the organic thin film solar cell solve the problem of contact barrier of a cathode buffer layer and a photoactive layer. The solar cell is of a regular-shape structure and sequentially comprises a substrate, a transparent conductive anode ITO, an anode buffer layer, a photoactive layer, a polar solvent buffer layer, a cathode buffer layer and a metal cathode from bottom to top. The thickness of the polar solvent buffer layer ranges from two nanometers to five nanometers, and the polar solvent buffer layer comprises, by weight, 95%-99% of 2-methyl cellosolve and 1%-5% of ethanol amine. The polar solvent buffer layer is added between the photoactive layer and the cathode buffer layer, the contact barrier between the cathode buffer layer and the photoactive layer can be effectively lowered, the series resistance of the devices is reduced, the carrier transmission efficiency is increased, and finally the photoelectric conversion efficiency of the devices is increased.
Description
Technical field
A kind of organic thin film solar cell and preparation method thereof, eliminates the potential barrier forming between photoactive layer and cathode buffer layer, belongs to organic polymer photovoltaic device or organic semiconductor thin-film area of solar cell.
Background technology
Along with the explosive growth of global energy demand, the own primary difficult problem that will face through becoming development of all countries economy of energy problem.Because solar energy has cleaning, the feature such as widely distributed, inexhaustible, research photovoltaic generation solves energy problem becomes emphasis and the focus of regenerative resource area research.At present, according to the difference of the material character of the photoactive layer of composition solar cell, active layer material can be divided into inorganic semiconductor material and organic semiconducting materials, the compound that inorganic semiconductor material has selenium, germanium and monocrystalline silicon or is made up of two kinds of elements.Organic semiconductor is the organic material with semiconductor property, and conductive capability, between metal and insulator, has hot activation conductivity and the conductivity organic substance within the scope of 10-10～100Scm-1.Organic semiconductor can be divided into organic substance, polymer and donor-receiver complex compound three classes.Organic substance class comprises aromatic hydrocarbons, dyestuff, metallo-organic compound, as purpurine, phthalocyanine, malachite green, rhodamine B etc.; Polymer class comprises that main chain is saturation classes polymer and conjugated type polymer, as polyphenyl, polyacetylene, polyvinylcarbazole, polyphenylene sulfide etc.; Charge transfer complex is made up of electronq donor and electron acceptor two parts, typically has tetramethyl-para-phenylene diamine and four cyano quinone bismethane compound; Organic semiconductor can change its conduction type and conductivity by doping method.Compared with inorganic semiconductor material, organic semiconducting materials is the synthesis condition gentleness relative to device process conditions of material itself not only, its molecular structure of chemistry is easily modified, while making battery with it, can meet that cost is low, power consumption less, the easily requirement of large-area manufacturing.From the nineties in 20th century, along with the fast development of thin film technique, the performance of battery prepared by employing new material new construction new technology is greatly enhanced.
But compared with the large-scale production of inorganic solar cell, organic solar batteries is because its photoelectric conversion efficiency is also relatively low, it is practical also needs time.Current, eurymeric solar cell, ripe gradually due to Wet technique, a large amount of are applicable to organic material prepared by wet method and are developed, and makes traditional organic thin film solar cell towards large-scale production further.But because organic solar search time is relatively short, cannot carry out optimum optimization processing to organic film structure, also fully realize for exciton dissociation and phonons acoustical scattering thereof simultaneously.Therefore how research carries out the core that layer buffer design is raising organic solar batteries, is also emphasis and the difficult point of this area research at present.
The main cause of restriction eurymeric structure organic solar batteries device efficiency is to have larger contact berrier between photoactive layer and the negative electrode buffering utmost point.And traditional solution is to adopt dry method or wet method therebetween to prepare one deck cathode buffer layer to reduce contact berrier.Current, not yet find a kind of suitable cathode buffer layer thoroughly to eliminate this contact berrier.And due to the existence of this contact berrier, the transmission that causes electronics is obstructed with separating, and make device have larger interface contact resistance and larger charge carrier recombination probability, all will seriously restrict device efficiency.
Summary of the invention
The present invention is directed to the deficiencies in the prior art part a kind of organic thin film solar cell and preparation method thereof is provided, modify cathode buffer layer by polar solvent resilient coating, reduced the contact berrier between photoactive layer and cathode buffer layer; Reduce the series resistance of device; Electric transmission efficiency and device short-circuit current density are improved.
To achieve these goals, the technical solution used in the present invention is:
A kind of organic thin film solar cell, it is characterized in that: this solar cell adopts eurymeric structure, be followed successively by from top to bottom substrate, transparent conductive anode ITO, anode buffer layer, photoactive layer, polar solvent resilient coating, cathode buffer layer, metallic cathode, the thickness range of described polar solvent resilient coating is 2～5nm, mass percent consist of 95%～99% 2-methyl cellosolve, 1～5% monoethanolamine.
As preferably, the material of described anode buffer layer for poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT:PSS), thickness range is 15～50nm.
As preferably, the concentration that described photoactive layer is mixed to get take mass ratio 1:20～5:1 by electron donor material P3HT and electron acceptor material PCBM is prepared from as 1～20mg/ml, and this layer thickness is 50～300nm.
As preferably, the material of described cathode buffer layer is TPBi, BCP, Bphen, Alq
3, ZnO or TiO
2one or more, thickness range is 1～20nm.
As preferably, the material of described metallic cathode is Ag, Al or Cu, and thickness range is 100～300nm.
As preferably, the material of described substrate is glass or transparent polymer, described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
A preparation method for organic thin film solar cell, is characterized in that, comprises the following steps:
(1) substrate being made up of substrate and transparent conductive anode ITO is cleaned, after cleaning, dry up with nitrogen;
(2) at transparent conductive anode ITO surface rotary coating, printing or spraying anode buffer layer PEDOT:PSS solution, and toast;
(3) on anode buffer layer, adopt the mode of spin coating or spraying or self assembly or inkjet printing or silk screen printing to prepare P3HT:PCBM photoactive layer, and toast;
(4) at photoactive layer surface evaporation, rotary coating or spraying polar solvent resilient coating;
(5) rotary coating, printing or spraying ZnO or TiO on polar solvent resilient coating
2solution, and formed film is toasted, or adopt vacuum vapour deposition at polar solvent resilient coating (5) upper evaporation TPBi, BCP, Bphen, Alq
3prepare cathode buffer layer;
(6) substrate is adopted the mode of thermal annealing carry out annealing in process;
(7) evaporation metal negative electrode on cathode buffer layer.
As preferably, described thermal annealing temperature range is 140～170 ℃.
As preferably, described thermal annealing mode adopts one or more of Thermostatic platform heating, baking oven heating, Far-infrared Heating, Hot-blast Heating or microwave heating.
As preferably, the temperature range of described P3HT:PCBM film baking is at 20～150 ℃.
Compared with prior art, the invention has the advantages that:
One, modify cathode buffer layer by polar solvent resilient coating, effectively reduced the contact berrier between cathode buffer layer and photoactive layer, thereby improved carrier transport efficiency;
Two, modify cathode buffer layer by polar solvent resilient coating, effectively reduced the series resistance of device, reduced the recombination probability of electronics at photoactive layer and cathode buffer layer interface;
Three, modify cathode buffer layer by polar solvent resilient coating, formed ohmic contact at photoactive layer and cathode buffer layer interface, thereby improved the transmission speed of electronics, increased the short-circuit current density of device.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
In figure: 1-substrate, 2-transparent conductive anode ITO, 3-anode buffer layer, 4-photoactive layer, 5-polar solvent resilient coating, 6-cathode buffer layer, 7-metallic cathode.
Fig. 2 is device parameters contrast schematic diagram of the present invention, and as seen from the figure, the device comparison of polar solvent resilient coating modified has obtained lifting than device performance.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
As shown in Figure 1, a kind of organic thin film solar cell, this solar cell adopts eurymeric structure, be followed successively by from top to bottom substrate, transparent conductive anode ITO, anode buffer layer, photoactive layer, polar solvent resilient coating, cathode buffer layer, metallic cathode, the thickness range of described polar solvent resilient coating is 2～5nm, mass percent consist of 95%～99% 2-methyl cellosolve, 1～5% monoethanolamine; The material of described anode buffer layer is for gathering (3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT:PSS), and thickness range is 15～50nm; The concentration that described photoactive layer is mixed to get take mass ratio 1:20～5:1 by electron donor material P3HT and electron acceptor material PCBM is prepared from as 1～20mg/ml, and this layer thickness is 50～300nm; The material of described cathode buffer layer is TPBi, BCP, Bphen, Alq
3, ZnO or TiO
2one or more, thickness range is 1～20nm; The material of described metallic cathode is Ag, Al or Cu, and thickness range is 100～300nm; The material of described substrate is glass or transparent polymer, described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
A preparation method for organic thin film solar cell, comprises the following steps:
(1) substrate being made up of substrate and transparent conductive anode ITO is cleaned, after cleaning, dry up with nitrogen;
(2) at transparent conductive anode ITO surface rotary coating, printing or spraying anode buffer layer PEDOT:PSS solution, and toast;
(3) on anode buffer layer, adopt the mode of spin coating or spraying or self assembly or inkjet printing or silk screen printing to prepare P3HT:PCBM photoactive layer, 20～150 ℃ of P3HT:PCBM films are toasted;
(4) at photoactive layer surface evaporation, rotary coating or spraying polar solvent resilient coating;
(5) rotary coating, printing or spraying ZnO or TiO on polar solvent resilient coating
2solution, and formed film is toasted, or adopt vacuum vapour deposition evaporation TPBi, BCP, Bphen, Alq on polar solvent resilient coating
3prepare cathode buffer layer;
(6) substrate is adopted the mode of thermal annealing carry out annealing in process, thermal annealing temperature range is 140～170 ℃, and thermal annealing mode adopts one or more of Thermostatic platform heating, baking oven heating, Far-infrared Heating, Hot-blast Heating or microwave heating;
(7) evaporation metal negative electrode on cathode buffer layer.
Embodiment 1:
The substrate being made up of transparent substrates and transparent conductive anode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare anode buffer layer at transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm), and formed film is toasted to (130 ℃, 30min); On anode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 ℃, 5min); At photoactive layer surface rotary coating polar solvent resilient coating (2-methyl cellosolve 95%, monoethanolamine 5%, 5000rpm, 60s, 2nm); On polar solvent resilient coating, rotary coating ZnO solution (5000rpm, 40s, 30nm) is prepared cathode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 ℃, 5min); Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.65V, short circuit current (J
sC)=11.1mA/cm
2, fill factor, curve factor (FF)=0.65, photoelectric conversion efficiency (PCE)=4.68%.
Embodiment 2:
The substrate being made up of transparent substrates and transparent conductive anode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare anode buffer layer at transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm), and formed film is toasted to (130 ℃, 30min); On anode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 ℃, 5min); At photoactive layer surface rotary coating polar solvent resilient coating (2-methyl cellosolve 96%, monoethanolamine 4%, 5000rpm, 60s, 2nm); On polar solvent resilient coating, rotary coating ZnO solution (5000rpm, 40s, 30nm) is prepared cathode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 ℃, 5min); Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.64V, short circuit current (J
sC)=10.5mA/cm
2, fill factor, curve factor (FF)=0.63, photoelectric conversion efficiency (PCE)=4.23%.
Embodiment 3:
The substrate being made up of transparent substrates and transparent conductive anode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare anode buffer layer at transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm), and formed film is toasted to (130 ℃, 30min); On anode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 ℃, 5min); At photoactive layer surface rotary coating polar solvent resilient coating (2-methyl cellosolve 98%, monoethanolamine 2%, 5000rpm, 60s, 2nm); On polar solvent resilient coating, rotary coating ZnO solution (5000rpm, 40s, 30nm) is prepared cathode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 ℃, 5min); Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.63V, short circuit current (J
sC)=9.83mA/cm
2, fill factor, curve factor (FF)=0.62, photoelectric conversion efficiency (PCE)=3.84%.
Embodiment 4:
The substrate being made up of transparent substrates and transparent conductive anode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare anode buffer layer at transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 40s, 30nm), and formed film is toasted to (130 ℃, 30min); On anode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 ℃, 5min); At photoactive layer surface rotary coating polar solvent resilient coating (2-methyl cellosolve 95%, monoethanolamine 5%, 5000rpm, 60s, 2nm); On polar solvent resilient coating, rotary coating ZnO solution (5000rpm, 40s, 30nm) is prepared cathode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 ℃, 5min); Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.60V, short circuit current (J
sC)=11.3mA/cm
2, fill factor, curve factor (FF)=0.60, photoelectric conversion efficiency (PCE)=4.07%.
Embodiment 5:
The substrate being made up of transparent substrates and transparent conductive anode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare anode buffer layer at transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 50s, 30nm), and formed film is toasted to (130 ℃, 30min); On anode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 ℃, 5min); At photoactive layer surface rotary coating polar solvent resilient coating (2-methyl cellosolve 99%, monoethanolamine 1%, 5000rpm, 60s, 2nm); On polar solvent resilient coating, rotary coating ZnO solution (5000rpm, 40s, 30nm) is prepared cathode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 ℃, 5min); Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.63V, short circuit current (J
sC)=11.5mA/cm
2, fill factor, curve factor (FF)=0.60, photoelectric conversion efficiency (PCE)=4.35%.
Embodiment 6:
The substrate being made up of transparent substrates and transparent conductive anode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare anode buffer layer at transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s), and formed film is toasted to (130 ℃, 15min); On anode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 ℃, 5min); At photoactive layer surface rotary coating polar solvent resilient coating (2-methyl cellosolve 95%, monoethanolamine 5%, 5000rpm, 60s, 2nm); On polar solvent resilient coating, rotary coating ZnO solution (4000rpm, 40s, 30nm) is prepared cathode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 ℃, 5min); Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.60V, short circuit current (J
sC)=12.1mA/cm
2, fill factor, curve factor (FF)=0.60, photoelectric conversion efficiency (PCE)=4.36%.
Embodiment 7:
The substrate being made up of transparent substrates and transparent conductive anode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; At transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) prepare anode buffer layer, and formed film is toasted to (130 ℃, 30min) and on anode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 ℃, 5min); At photoactive layer surface rotary coating polar solvent resilient coating (2-methyl cellosolve 95%, monoethanolamine 5%, 5000rpm, 60s, 2nm); On polar solvent resilient coating, vacuum evaporation BCP (5nm) prepares cathode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 ℃, 5min); Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.64V, short circuit current (J
sC)=12.1mA/cm
2, fill factor, curve factor (FF)=0.58, photoelectric conversion efficiency (PCE)=4.49%.
Embodiment 8:
The substrate being made up of transparent substrates and transparent conductive anode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare anode buffer layer at transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm), and formed film is toasted to (130 ℃, 30min); On anode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 ℃, 5min); At photoactive layer surface rotary coating polar solvent resilient coating (2-methyl cellosolve 95%, monoethanolamine 5%, 5000rpm, 60s, 2nm); On polar solvent resilient coating, vacuum evaporation Bphen (7nm) prepares cathode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 ℃, 5min); Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.58V, short circuit current (J
sC)=11.3mA/cm
2, fill factor, curve factor (FF)=0.55, photoelectric conversion efficiency (PCE)=3.61%.
Embodiment 9:
The substrate being made up of transparent substrates and transparent conductive anode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; At transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm) prepare anode buffer layer, and formed film is toasted to (130 ℃, 30min) and on anode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 ℃, 5min); At photoactive layer surface rotary coating polar solvent resilient coating (2-methyl cellosolve 95%, monoethanolamine 5%, 5000rpm, 60s, 2nm); On polar solvent resilient coating, vacuum evaporation BCP (3nm) prepares cathode buffer layer; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 ℃, 5min); Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.56V, short circuit current (J
sC)=10.4mA/cm
2, fill factor, curve factor (FF)=0.60, photoelectric conversion efficiency (PCE)=3.49%.
Comparative example 1:
The substrate being made up of transparent substrates and transparent conductive anode ITO that effects on surface roughness is less than 1nm cleans, and after cleaning, dries up with nitrogen; Prepare anode buffer layer at transparent conductive anode ITO surface rotary coating PEDOT:PSS solution (3000rpm, 60s, 30nm), and formed film is toasted to (130 ℃, 30min); On anode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20mg/ml) photoactive layer (1000rpm, 25s, 220nm), and toast (140 ℃, 5min); Prepare cathode buffer layer at photoactive layer surface rotary coating ZnO solution (5000rpm, 40s, 30nm); Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 ℃, 5min); Evaporation metal negative electrode Ag (100nm) on cathode buffer layer.Under standard test condition: AM1.5,100mW/cm
2, record the open circuit voltage (V of device
oC)=0.54V, short circuit current (J
sC)=9.6mA/cm
2, fill factor, curve factor (FF)=0.55, photoelectric conversion efficiency (PCE)=2.85%.
Table 1: the series resistance (R of device of the present invention and comparative example device
s) and parallel resistance (R
sq)
Table 1 is the series resistance (R of device of the present invention and comparative example device
s) and parallel resistance (R
sq).The series resistance of device has determined the height of device short-circuit current density, and parallel resistance has determined the height of device FF.The device series resistance of polar solvent modified reduces greatly as can be seen from the table, and simultaneously parallel resistance has obtained lifting, thereby short-circuit current density that can boost device improves device efficiency.
Fig. 2 is device parameters contrast schematic diagram of the present invention, and as seen from Figure 2, the device comparison of polar solvent resilient coating modified has obtained lifting than device performance.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment is the object for giving an example and illustrating just, but not is intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, can also make more kinds of variants and modifications according to instruction of the present invention, these variants and modifications all drop in the present invention's scope required for protection.Protection scope of the present invention is defined by the appended claims and equivalent scope thereof.
Claims (10)
1. an organic thin film solar cell, it is characterized in that: this solar cell adopts eurymeric structure, be followed successively by from top to bottom substrate (1), transparent conductive anode ITO(2), anode buffer layer (3), photoactive layer (4), polar solvent resilient coating (5), cathode buffer layer (6), metallic cathode (7), the thickness range of described polar solvent resilient coating (5) is 2～5nm, mass percent consist of 95%～99% 2-methyl cellosolve, 1～5% monoethanolamine.
2. a kind of organic thin film solar cell according to claim 1, it is characterized in that: the material of described anode buffer layer (3) is poly-(3,4-Ethylenedioxy Thiophene)-gathering (styrene sulfonic acid) (PEDOT:PSS), thickness range is 15～50nm.
3. a kind of organic thin film solar cell according to claim 1, it is characterized in that: the concentration that described photoactive layer (4) is mixed to get take mass ratio 1:20～5:1 by electron donor material P3HT and electron acceptor material PCBM is prepared from as 1～20mg/ml, and this layer thickness is 50～300nm.
4. a kind of organic thin film solar cell according to claim 1, is characterized in that: the material of described cathode buffer layer (6) is TPBi, BCP, Bphen, Alq
3, ZnO or TiO
2one or more, thickness range is 1～20nm.
5. a kind of organic thin film solar cell according to claim 1, is characterized in that: the material of described metallic cathode (7) is Ag, Al or Cu, and thickness range is 100～300nm.
6. a kind of organic thin film solar cell according to claim 1, it is characterized in that: the material of described substrate (1) is glass or transparent polymer, described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
7. according to the preparation method of a kind of organic thin film solar cell described in any one in claim 1-6, it is characterized in that, comprise the following steps:
(1) to by substrate (1) and transparent conductive anode ITO(2) substrate that forms cleans, after cleaning, dries up with nitrogen;
(2) at transparent conductive anode ITO(2) surperficial rotary coating, printing or spraying anode buffer layer (3) PEDOT:PSS solution, and toast;
(3) prepare P3HT:PCBM photoactive layer (4) in the upper mode that adopts spin coating or spraying or self assembly or inkjet printing or silk screen printing of anode buffer layer (3), and toast;
(4) at photoactive layer (4) surface evaporation, rotary coating or spraying polar solvent resilient coating (5);
(5) at the upper rotary coating of polar solvent resilient coating (5), printing or spraying ZnO or TiO
2solution, and formed film is toasted, or adopt vacuum vapour deposition at polar solvent resilient coating (5) upper evaporation TPBi, BCP, Bphen, Alq
3prepare cathode buffer layer (6);
(6) substrate is adopted the mode of thermal annealing carry out annealing in process;
(7) at the upper evaporation metal negative electrode (7) of cathode buffer layer (6).
8. the preparation method of a kind of organic thin film solar cell according to claim 7, is characterized in that: in described step (6), thermal annealing temperature range is 140～170 ℃.
9. the preparation method of a kind of organic thin film solar cell according to claim 8, it is characterized in that: in described step (6), thermal annealing mode adopts one or more of Thermostatic platform heating, baking oven heating, Far-infrared Heating, Hot-blast Heating or microwave heating.
10. the preparation method of a kind of organic thin film solar cell according to claim 7, is characterized in that: in described step (3), the temperature range of P3HT:PCBM film baking is at 20～150 ℃.
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