CN103887285A - Method for manufacturing anti-static TFT substrate - Google Patents
Method for manufacturing anti-static TFT substrate Download PDFInfo
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- CN103887285A CN103887285A CN201410100346.9A CN201410100346A CN103887285A CN 103887285 A CN103887285 A CN 103887285A CN 201410100346 A CN201410100346 A CN 201410100346A CN 103887285 A CN103887285 A CN 103887285A
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Abstract
The invention relates to a method for manufacturing an anti-static TFT substrate. The method includes the steps of providing a TFT substrate, manufacturing an ITO film laminated on the TFT substrate through magnetron sputtering to obtain an intermediate product, heating the intermediate product to be at 150 DEG C-160 DEG C, keeping the intermediate product at 150 DEG C-160 DEG C for 10 minutes to 30 minutes, and carrying out natural cooling to obtain the anti-static TFT substrate. Experiments indicate that the anti-static TFT substrate manufactured with the method is stable in ESD prevention performance.
Description
Technical field
The present invention relates to TFT substrate technical field, particularly relate to a kind of preparation method of antistatic TFT substrate.
Background technology
At present, generally at TFT(Thin-Film Transistor) prepare IITO(tin indium oxide on substrate) film obtains antistatic TFT substrate, TFT substrate is carried out to anti-ESD(Electro-Static discharge).
The share of antistatic TFT substrate on market is increasing, and the accumulation of product inventory is also increasing, and the storage life of product is a difficult problem for existing market maximum.Product is preserved environmental costs costliness, time is greatly about 3～6 months, once product is encountered acid, alkali, humiture exceeds standard, and easily causes ITO rete to come off, anti-ESD lost efficacy, the most direct solution: remove rete, again plate one deck ITO rete, time-consuming, take a lot of work, environmental pollution, secondary fragment, strengthens processing cost.
Summary of the invention
Based on this, be necessary to provide a kind of preparation method of antistatic TFT substrate, to prepare the TFT substrate that anti-ESD performance is comparatively stable.
A preparation method for antistatic TFT substrate, comprises the steps:
TFT substrate is provided;
Adopt magnetron sputtering preparation to be laminated in the ito thin film on described TFT substrate, obtain intermediate products; And
Described intermediate products are heated to 150 DEG C～160 DEG C, and are incubated 10 clock～30 minute at 150 DEG C～160 DEG C, naturally cooling, obtain described antistatic TFT substrate.
In an embodiment, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products therein, and the temperature of described TFT substrate is 60 DEG C～80 DEG C.
In an embodiment, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products therein, and the voltage of described magnetron sputtering is 300V～380V, and power is 2500W～3500W.
In an embodiment, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products therein, and the vacuum degree of described magnetron sputtering is 2.5 × 10
-1pa～3.50 × 10
-3pa.
In an embodiment, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products therein, and the distance of described TFT substrate and target is 70mm～80mm.
In an embodiment, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products therein, and the speed of service of described TFT substrate is 1.0m/min～1.2m/min.
In an embodiment, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products therein, and the flow of reacting gas is 180sccm～220sccm, and the flow of process gas is 1000sccm～1300sccm.
Therein in an embodiment, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtain in the step of intermediate products, described magnetron sputtering is to adopt three targets to carry out the preparation of continuity plated film to be laminated in the ito thin film on described TFT substrate.
Therein in an embodiment, in the described operation that described intermediate products is heated to 150 DEG C～160 DEG C, heating rate is 5 DEG C/min～30 DEG C/min.
Therein in an embodiment, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, before obtaining the step of intermediate products, also comprise described TFT substrate is cleaned and dry step, described cleaning and dry step are specially: with pure water and alkali lye, described TFT substrate is washed successively, and then carry out successively two fluid sprays, ultra-pure water spray and high-pressure spraying, then pass through successively cold wind and heated-air drying.
The preparation method of above-mentioned antistatic TFT substrate is prepared after ito thin film on TFT substrate, is being heated to 150 DEG C～160 DEG C, and is incubated 10 clock～30 minute at 150 DEG C～160 DEG C, the naturally cooling antistatic TFT substrate that obtains.Our experiments show that, the anti-ESD performance of the prepared antistatic TFT substrate of the method is comparatively stable.
Brief description of the drawings
Fig. 1 is preparation method's flow chart of the antistatic TFT substrate of an execution mode;
Fig. 2 is the preparation method's of the antistatic TFT substrate shown in Fig. 1 schematic diagram.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.A lot of details are set forth in the following description so that fully understand the present invention.But the present invention can implement to be much different from alternate manner described here, and those skilled in the art can do similar improvement without prejudice to intension of the present invention in the situation that, and therefore the present invention is not subject to the restriction of following public concrete enforcement.
Refer to Fig. 1, the preparation method of the antistatic TFT substrate of an execution mode, comprises the steps S110～step S130.
Step S110: TFT substrate is provided.
In order to ensure the knot cleanliness of TFT substrate, first TFT substrate is cleaned and is dried.Cleaning and dry step are specially: with pure water and alkali lye, TFT substrate is washed successively, and then carry out successively two fluid sprays, ultra-pure water spray and high-pressure spraying, then pass through successively cold wind and heated-air drying.
Alkali lye is alkaline detergent, as washing powder solution, liquid detergent solution etc.
High-pressure spraying refers to high-pressure spraying ultra-pure water, and pressure is preferably 1.5kg/cm
2, fully to remove the pollutant such as dust, greasy dirt on TFT substrate, but do not damage TFT substrate.
After TFT base-plate cleaning is clean, pass through successively cold wind and heated-air drying, then check TFT substrate surface cleaning quality, qualified, for subsequent use.Use successively cold wind and heated-air drying, be conducive to reduce TFT substrate breakage risk, protection TFT substrate.
Step S120: adopt magnetron sputtering preparation to be laminated in the ito thin film on TFT substrate, obtain intermediate products.
Please refer to Fig. 2, crystals dried TFT substrate enters successively sputtering chamber and carries out plated film after entering sheet chamber, transition chamber and surge chamber.
In coating process, the temperature of TFT substrate is 60 DEG C～80 DEG C.The vacuum degree of magnetron sputtering is 2.5 × 10
-1pa～3.50 × 10
-3pa.The power supply of magnetron sputtering is 300V～380V, and power is 2500W～3500W.The speed of service of TFT substrate is 1.0m/min～1.8m/min.
Adopt ITO target as target, wherein, indium oxide (In
2o
3) and tin oxide (SnO
2) mol ratio be 9:1.
Preferably, the distance of TFT substrate and target is 70mm～80mm.
Adopt oxygen as reacting gas, adopt ar gas acting process gas.Preferably, the flow of reacting gas is 180sccm～220sccm, and the flow of process gas is 1000sccm～1300sccm.
Above-mentioned employing magnetron sputtering preparation is laminated in the ito thin film on TFT substrate, and the temperature of TFT substrate is only 60 DEG C～80 DEG C, and energy consumption is lower.Simultaneously, by vacuum degree, power supply, power, the speed of service of TFT substrate and the flow of reacting gas and process gas of magnetron sputtering are rationally set, preparing under lower TFT substrate temperature, compactness is good, the ito thin film of the high and thick degree good uniformity of adhesive force.
Thickness 150nm～the 250nm of prepared ito thin film, to ensure anti-ESD effect and the light transmittance of TFT substrate.Light transmittance is controlled at more than 95% or 95%, to meet the user demand of TFT substrate.
Preferably, sputtering chamber is two, and one of them places two targets, and another places a target, carries out the preparation of continuity plated film be laminated in the ito thin film on TFT substrate with three targets, is conducive to improve film thickness uniformity.
Step S130: intermediate products are heated to 150 DEG C～160 DEG C, and are incubated 10 clock～30 minute at 150 DEG C～160 DEG C, naturally cooling, obtain described antistatic TFT substrate.
Preferably, intermediate products are heated in the operation of 150 DEG C～160 DEG C, heating rate is 5 DEG C/min～30 DEG C/min, adopts this heating rate, is conducive to improve the crystal property of ito thin film, improves anti-ESD performance.
Intermediate products are incubated 10 clock～30 minute at 150 DEG C～160 DEG C, naturally cooling, obtain antistatic TFT substrate.After above-mentioned condition is annealed, the adhesive force of ito thin film on the substrate of TFT improves, hardness also increases, oxidation resistance strengthens, airborne moisture and dust adsorption capacity are declined, weak acid resistant and weak base performance are good, make ito thin film comparatively stable, thereby have improved the anti-ESD performance of TFT substrate.
Please again consult Fig. 2, preferably, enter surge chamber after having plated the TFT substrate of ito thin film, and then enter heating chamber from surge chamber and heat-treat.Preferably, surge chamber has four, four linearly formula arrangements of surge chamber.Heating chamber has three, three linearly formula arrangements of heating chamber.
The TFT substrate of ito thin film is warming up to after 150 DEG C～160 DEG C in heating chamber, at 150 DEG C～160 DEG C, is incubated 10 clock～30 minute, then enters slice chamber, in slice chamber, naturally cools to room temperature, obtains antistatic TFT substrate.
By four surge chambers and three heating chambers are set, can multiple TFT substrates that plated ito thin film be heated and are incubated simultaneously, be conducive to reduce energy consumption and raise the efficiency.Four surge chambers can cushion preferably, improve quantity-produced order.
Adhesive force and the hardness of the ito thin film that the preparation method of above-mentioned antistatic TFT substrate forms are higher, and oxidation resistance strengthens, airborne moisture and dust adsorption capacity are declined, make the stability of ito thin film itself higher, and be difficult for coming off from TFT substrate, thereby make the anti-ESD performance of TFT substrate comparatively stable, its storage time can be for 2 years, and lower to storage condition requirement, reduce storage cost.
Preparation method's energy consumption of above-mentioned antistatic TFT substrate is low, and owing to placing after the long period, still can keep good anti-ESD performance again, and without doing over again, technique is plated ITO film, low-carbon environment-friendly again.
Further set forth by specific embodiment below.
Embodiment 1
Prepare antistatic TFT substrate
1, improve TFT substrate, with pure water and alkali lye, TFT substrate is washed successively, and then carry out successively two fluid sprays, ultra-pure water spray and high-pressure spraying, then pass through successively cold wind and heated-air drying, for subsequent use, wherein, the pressure of high-pressure spraying is 1.5kg/cm
2;
2, adopt magnetron sputtering preparation to be laminated in the ito thin film on TFT substrate, obtain intermediate products; In coating process, the temperature of TFT substrate is 80 DEG C, and the vacuum degree of magnetron sputtering is 2.5 × 10
-1pa, power supply is 300V, and power is 2500W, and the speed of service of TFT substrate is 1.0m/min, TFT substrate and ITO target (In
2o
3: SnO
2=9:1) distance be 70mm, the flow of oxygen is 180sccm, the flow of argon gas is 1000sccm;
3, intermediate products are heated to 150 DEG C, heating rate is 5 DEG C/min, and intermediate products are in 150 DEG C of upper insulations 30 minutes, naturally cooling, obtains antistatic TFT substrate.
Wherein, after having prepared, test, TFT substrate surface resistance 500 Ω/, the thickness of ito thin film is 210nm, the light transmittance of ito thin film is 96%.Adhesive force 5B (hundred lattice experiment 0-5B, 3B or 3B are qualified above), the sticky acetic acid wiping ito thin film of cotton swab surface comes off without rete for 30 seconds, film hardness 9H(6H or 6H are qualified above), in the sodium hydrate aqueous solution that is 4% in mass concentration by this antistatic TFT substrate, soak 5 minutes, the rate of change of the sheet resistance of ito thin film is in 30%, qualified.
By this antistatic TFT substrate be stored in temperature be 25 ± 10 DEG C, humidity be 10%～90% and cleanliness factor be in the warehouse of ten thousand grades-100,000 grades, after 24 months, test, TFT substrate surface resistance 510 Ω/, adhesive force 5B, the sticky acetic acid wiping ito thin film of cotton swab surface comes off without rete for 30 seconds, film hardness 7H, the stability of ito thin film that this antistatic TFT substrate is described is better, makes the anti-ESD performance of antistatic TFT substrate comparatively stable.
Embodiment 2
Prepare antistatic TFT substrate
1, improve TFT substrate, with pure water and alkali lye, TFT substrate is washed successively, and then carry out successively two fluid sprays, ultra-pure water spray and high-pressure spraying, then pass through successively cold wind and heated-air drying, for subsequent use, wherein, the pressure of high-pressure spraying is 1.5kg/cm
2;
2, adopt magnetron sputtering preparation to be laminated in the ito thin film on TFT substrate, obtain intermediate products; In coating process, the temperature of TFT substrate is 60 DEG C, and the vacuum degree of magnetron sputtering is 3.50 × 10
-3pa, power supply is 380V, and power is 3500W, and the speed of service of TFT substrate is 1.8m/min, TFT substrate and ITO target (In
2o
3: SnO
2=9:1) distance be 80mm, the flow of oxygen is 220sccm, the flow of argon gas is 1300sccm;
3, intermediate products are heated to 160 DEG C, heating rate is 30 DEG C/min, and intermediate products are incubated to 10 minutes at 160 DEG C, naturally cooling, obtains antistatic TFT substrate.
Wherein, after having prepared, test, TFT substrate surface resistance 400 Ω/, the thickness of ito thin film is 250nm, the light transmittance of ito thin film is 96%.Adhesive force 5B (hundred lattice experiment 0-5B, 3B or 3B are qualified above), the sticky acetic acid wiping ito thin film of cotton swab surface comes off without rete for 30 seconds, film hardness 9H(6H or 6H are qualified above), in the sodium hydrate aqueous solution that is 4% in mass concentration by this antistatic TFT substrate, soak 5 minutes, the rate of change of the sheet resistance of ito thin film is in 30%, qualified.
By this antistatic TFT substrate be stored in temperature be 25 ± 10 DEG C, humidity be 10%～90% and cleanliness factor be in the warehouse of ten thousand grades-100,000 grades, after 24 months, test, TFT substrate surface resistance 500 Ω/, adhesive force 5B, the sticky acetic acid wiping ito thin film of cotton swab surface comes off without rete for 30 seconds, film hardness 7H, the stability of ito thin film that this antistatic TFT substrate is described is better, makes the anti-ESD performance of antistatic TFT substrate comparatively stable.
Embodiment 3
Prepare antistatic TFT substrate
1, improve TFT substrate, with pure water and alkali lye, TFT substrate is washed successively, and then carry out successively two fluid sprays, ultra-pure water spray and high-pressure spraying, then pass through successively cold wind and heated-air drying, for subsequent use, wherein, the pressure of high-pressure spraying is 1.5kg/cm
2;
2, adopt magnetron sputtering preparation to be laminated in the ito thin film on TFT substrate, obtain intermediate products; In coating process, the temperature of TFT substrate is 70 DEG C, and the vacuum degree of magnetron sputtering is 3.00 × 10
-3pa, power supply is 350V, and power is 3000W, and the speed of service of TFT substrate is 1.2m/min, TFT substrate and ITO target (In
2o
3: SnO
2=9:1) distance be 75mm, the flow of oxygen is 200sccm, the flow of argon gas is 1200sccm;
3, intermediate products are heated to 155 DEG C, heating rate is 15 DEG C/min, and intermediate products are incubated to 20 minutes at 155 DEG C, naturally cooling, obtains antistatic TFT substrate.
Wherein, after having prepared, test, TFT substrate surface resistance 450 Ω/, the thickness of ito thin film is 250nm, the light transmittance of ito thin film is 96%.Adhesive force 5B (hundred lattice experiment 0-5B, 3B or 3B are qualified above), the sticky acetic acid wiping ito thin film of cotton swab surface comes off without rete for 30 seconds, film hardness 9H(6H or 6H are qualified above), in the sodium hydrate aqueous solution that is 4% in mass concentration by this antistatic TFT substrate, soak 5 minutes, the rate of change of the sheet resistance of ito thin film is in 30%, qualified.
By this antistatic TFT substrate be stored in temperature be 25 ± 10 DEG C, humidity be 10%～90% and cleanliness factor be in the warehouse of ten thousand grades-100,000 grades, after 24 months, test, TFT substrate surface resistance 500 Ω/, adhesive force 5B, the sticky acetic acid wiping ito thin film of cotton swab surface comes off without rete for 30 seconds, film hardness 7H, the stability of ito thin film that this antistatic TFT substrate is described is better, makes the anti-ESD performance of antistatic TFT substrate comparatively stable.
The above embodiment has only expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. a preparation method for antistatic TFT substrate, is characterized in that, comprises the steps:
TFT substrate is provided;
Adopt magnetron sputtering preparation to be laminated in the ito thin film on described TFT substrate, obtain intermediate products; And
Described intermediate products are heated to 150 DEG C～160 DEG C, and are incubated 10 clock～30 minute at 150 DEG C～160 DEG C, naturally cooling, obtain described antistatic TFT substrate.
2. the preparation method of antistatic TFT substrate according to claim 1, is characterized in that, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products, and the temperature of described TFT substrate is 60 DEG C～80 DEG C.
3. the preparation method of antistatic TFT substrate according to claim 1, it is characterized in that, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products, the voltage of described magnetron sputtering is 300V～380V, and power is 2500W～3500W.
4. the preparation method of antistatic TFT substrate according to claim 1, is characterized in that, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products, and the vacuum degree of described magnetron sputtering is 2.5 × 10
-1pa～3.50 × 10
-3pa.
5. the preparation method of antistatic TFT substrate according to claim 1, it is characterized in that, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products, and the distance of described TFT substrate and target is 70mm～80mm.
6. the preparation method of antistatic TFT substrate according to claim 1, it is characterized in that, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtains in the step of intermediate products, and the speed of service of described TFT substrate is 1.0m/min～1.2m/min.
7. the preparation method of antistatic TFT substrate according to claim 1, it is characterized in that, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtain in the step of intermediate products, the flow of reacting gas is 180sccm～220sccm, and the flow of process gas is 1000sccm～1300sccm.
8. the preparation method of antistatic TFT substrate according to claim 1, it is characterized in that, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, obtain in the step of intermediate products, described magnetron sputtering is to adopt three targets to carry out the preparation of continuity plated film to be laminated in the ito thin film on described TFT substrate.
9. the preparation method of antistatic TFT substrate according to claim 1, is characterized in that, in the described operation that described intermediate products is heated to 150 DEG C～160 DEG C, heating rate is 5 DEG C/min～30 DEG C/min.
10. the preparation method of antistatic TFT substrate according to claim 1, it is characterized in that, described employing magnetron sputtering preparation is laminated in the ito thin film on described TFT substrate, before obtaining the step of intermediate products, also comprise described TFT substrate is cleaned and dry step, described cleaning and dry step are specially: with pure water and alkali lye, described TFT substrate is washed successively, and then carry out successively two fluid sprays, ultra-pure water spray and high-pressure spraying, then pass through successively cold wind and heated-air drying.
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| CN106356334A (en) * | 2016-10-27 | 2017-01-25 | 江西沃格光电股份有限公司 | Process for producing antistatic TFT substrate |
| CN109481841A (en) * | 2018-10-29 | 2019-03-19 | 晶晨半导体(上海)股份有限公司 | A method of improving Electro-static Driven Comb performance |
| CN110527963A (en) * | 2019-08-05 | 2019-12-03 | 芜湖长信科技股份有限公司 | A kind of manufacturing method that antistatic touch display is integrally shielded |
| CN110981214A (en) * | 2019-12-19 | 2020-04-10 | 芜湖长信科技股份有限公司 | Liquid crystal panel toning glass and production process thereof |
| CN111257230A (en) * | 2020-02-13 | 2020-06-09 | 北京石墨烯研究院 | Photoelectric detection probe |
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