CN103872008A - High frequency inductor structure having increased inductance density and quality factor - Google Patents
High frequency inductor structure having increased inductance density and quality factor Download PDFInfo
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- CN103872008A CN103872008A CN201310627458.5A CN201310627458A CN103872008A CN 103872008 A CN103872008 A CN 103872008A CN 201310627458 A CN201310627458 A CN 201310627458A CN 103872008 A CN103872008 A CN 103872008A
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- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000004364 calculation method Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 2
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- 239000003989 dielectric material Substances 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 192
- 239000002184 metal Substances 0.000 description 192
- 238000001465 metallisation Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 8
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- 239000003990 capacitor Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Abstract
Disclosed is an inductor structure. The inductor structure includes a base material, a plurality of bottom spiral conductors disposed on the base material, and at least one top spiral conductor disposed on the at least one bottom spiral conductor, and dielectric material separating the bottom, middle and top spiral conductors. A current path for high frequency operation is disclosed. Also disclosed is a method for determining the number of turns in the at least one top spiral conductor and the at least one bottom spiral conductor.
Description
Technical field
The present invention relates to inductor field, particularly relate to the connection in series-parallel inductor with high-quality and high inductance density building on the base material such as semi-conducting material.
Background technology
In semi-conductor industry, digital and analog circuit, comprises complicated microprocessor, has successfully been implemented in semiconductor integrated circuit.Such integrated circuit can typically include source apparatus and passive device, and active device is for example field-effect transistor, and passive device is for example resistor, capacitor and inductor.
People wish to have the inductor of high-quality Q and high inductance density.But difficult is also to keep high inductance density in obtaining high-quality Q.In conventional design, factor of quality Q or inductance density are usually less than desired value.
Summary of the invention
Be achieved by providing according to the inductor structure of the first aspect of exemplary embodiment with various advantages and the object of exemplary embodiment described below above.This inductor structure comprises: base material; Multiple bottoms spiral conductor, it has the first number of turn n2 spiral part being arranged on base material, and multiple bottoms spiral conductor has the thickness t of measuring in the direction vertical with base material
bot1, t
bot2... t
botn; At least one top spiral conductor, it has the second number of turn n1 spiral part contacting with multiple bottoms spiral conductor, and at least one top spiral conductor has the thickness t of measuring in the direction vertical with base material
top1, and there is width W
thickarrive turn-to-turn every S with circle
thick, wherein width W
thickarrive turn-to-turn every S with circle
thickin the direction that is parallel to base material, measure, make t
top1be greater than t
bot1, t
bot2... t
botn; And the dielectric substance of bottom and top spiral conductor separately; The circle of every circle of at least one top spiral conductor and multiple bottoms spiral conductor is axially aligned, the circle of axially aligning that this inductor structure has from the circle of at least one top spiral conductor to multiple bottoms spiral conductor is axially aligned the current channel of circle to the next circle of top spiral conductor to the next circle of multiple bottoms spiral conductor at least one top spiral conductor, and continue until this current channel by all circles of at least one top spiral conductor and multiple bottom conductors.
According to the second aspect of exemplary embodiment, the inductor structure providing comprises: base material, multiple bottoms spiral conductor, it has the first number of turn n2 spiral part being arranged on base material, and multiple bottoms spiral conductor has the thickness t of measuring in the direction vertical with base material
bot1, t
bot2... t
botn, at least one top spiral conductor, it has the second number of turn n1 spiral part contacting with multiple bottoms spiral conductor, and at least one top spiral conductor has the thickness t of measuring in the direction vertical with base material
top1, make t
top1be greater than t
bot1, t
bot2... t
botn, and the dielectric substance of bottom and top spiral conductor separately, the circle of every circle of at least one top spiral conductor and multiple bottoms spiral conductor is axially aligned, the circle of axially aligning that inductor structure has from the circle of at least one top spiral conductor to multiple bottoms spiral conductor is axially aligned the current channel of circle to the next circle of top spiral conductor to the next circle of multiple bottoms spiral conductor at least one top spiral conductor, and continuation is until current channel has passed through all circles of at least one top spiral conductor and multiple bottom conductors, wherein each and at least one top spiral conductor of multiple bottoms spiral conductor each have the width measured in the direction that is parallel to base material and circle to turn-to-turn every, wherein each width W of multiple bottoms spiral conductor
thin, be greater than the width W of at least one top spiral conductor
thick, and wherein each circle of multiple bottoms spiral conductor to turn-to-turn every S
thin, the circle that is less than at least one top spiral conductor to turn-to-turn every S
thick, and wherein inductor has external diameter OD, and inner diameter, ID, make:
W
thick+S
thick=W
thin+S
thin，
ID=OD-(2) (n1) (W
thick+ S
thick), the wherein number of turn of the topmost conductor of n1=inductor structure,
S
thinby the he design rules specify of minimum interval, and
W
thin=（（OD-ID）/n1）-S
thin。
According to the third aspect of exemplary embodiment, provide a kind of method that designs inductor structure.The method comprises: inductor structure is provided, and inductor structure comprises: base material; Be arranged at least one the bottom spiral conductor on base material, at least one bottom spiral conductor has thickness t
bot1, width w
thinarrive turn-to-turn every s with circle
thin; At least one top spiral conductor, contacts with at least one bottom spiral conductor, and at least one top spiral conductor has thickness t
top1, width w
thickarrive turn-to-turn every s with circle
thick, wherein M
totalrepresent the sum of top spiral conductor; And the dielectric substance of bottom and top spiral conductor separately.The method also comprises the total number of turns N in regulation inductor structure; And the number of turn n2 of the number of turn n1 of definite topmost conductor and at least one bottom spiral conductor, making n2 is N/(M
total+ 1), wherein n2 is the whole-number result except formula, and N/(M
total+ 1) except any decimal remainder R staying in formula, be applied to n1, making n1 is N/(M
total+ 1) add the 1/M of remainder R
totaldoubly, wherein n1 can comprise decimal circle, and n2 only allows to comprise the integer number of turn.The method is carried out on one or more calculation elements.
Accompanying drawing explanation
Exemplary embodiment thinks that the essential characteristic of novel feature and exemplary embodiment limits especially in claims.Accompanying drawing is not only for the object of explanation is drawn in proportion.Exemplary embodiment, as about structure and method of operation the two, can understand better by reference to the detailed description of carrying out by reference to the accompanying drawings, wherein:
Figure 1A, 1B and 1C are respectively according to the plane graph of the top spiral conductor of exemplary embodiment, intermediate conveyor screw conductor and bottom spiral conductor.
Fig. 2 is according to the sectional view of the multi-layer inductor of the first exemplary embodiment.
Fig. 3 is according to the sectional view of the multi-layer inductor of the second exemplary embodiment.
Fig. 4 is according to the sectional view of the multi-layer inductor of the 3rd exemplary embodiment.
Fig. 5 is according to the sectional view of the multi-layer inductor of the 4th exemplary embodiment.
Fig. 6 is the process flow diagram for optimizing factor of quality Q and induction coefficient.
Fig. 7 is the user interface of the number of turn for determining multi-layer inductor.
Fig. 8 illustrates the flow process for top spiral inductor layer with the various inductor options of the inductor of single thickness metal.
Fig. 9 shows the current channel of each inductor option in Fig. 8.
Figure 10 shows another current channel of the high-frequency operation of each inductor option in Fig. 8.
Figure 11 illustrates that top spiral inductor layer has the flow process of the various inductor options of the inductor of two thickness metals.
Figure 12 shows the current channel of each inductor option in Figure 11.
Figure 13 shows another current channel of the high-frequency operation of each inductor option in Figure 11.
Embodiment
First referring to Figure 1A, 1B and 1C, show the plane graph for the manufacture of at least three conductors with spiral circle of the inductor of exemplary embodiment.At the full text of this specification, the conductor with spiral circle also can refer to spiral conductor, and two kinds of descriptions are thought to be equal to.Figure 1A shows upper conductor spiral circle 100, and Figure 1B shows center conductor spiral circle 102, and Fig. 1 C shows bottom conductor spiral circle 104.Can there is more than one bottom conductor layer 104.In use, upper conductor spiral circle 100 can be arranged on the top of center conductor spiral circle 102, and center conductor spiral circle 102 can be arranged on the top of bottom conductor spiral circle 104.Dielectric substance is formed between conductor spiral circle 100,102 and 104, between each conductor 100,102 and 104 with spiral conductor 100,102 and 104 separately and around each conductor 100,102 and 104 so that they and adjacent electric wire are separated.
Conductor 100,102 and 104 in Figure 1A, 1B and 1C is in order to illustrate an exemplary embodiment, and the spiral number of turn, spiral circle width and spiral turn-to-turn are every changing in other exemplary embodiment shown in the drawings below.
The sectional view of the exemplary embodiment that Fig. 2 shows inductor 200 on direction of arrow 2-2, it comprises the various spiral conductors 100,102,104 shown in Fig. 1, has increased insulative dielectric material and connecting path.Spiral conductor 100,102 with 104 each the spiral number of turn, spiral circle width and spiral turn-to-turn every can be different at the sectional view below other exemplary embodiment when only comparing for the plane graph that illustrates object and provide in Figure 1A, 1B and 1C.Inductor 200 can comprise more than one bottom conductor 104.Fig. 2 shows additional bottom conductor layer 104, and it is not shown to have additional bottom conductor layer 104() meet electric designing requirement.
Compared with all the other conductors of top spiral conductor 100 and inductor 200, there is low square resistance.Upper conductor 100 comprises spiral circle 202, and it has the conventional dielectric substance 204 between spiral circle 202.Upper conductor 100 can be by aluminium or copper production.
The thickness t of upper conductor 100
top1in the direction vertical with substrate 210, measure, and the thickness t of center conductor 102
bot1and the thickness " t of bottom conductor
bot2and t
bot3" as shown in Figure 2.The width w of the spiral circle 202 in conductor 100
thickin the direction that is parallel to substrate 210, measure the width w of the spiral circle 218 of conductor group 216
thinin the direction that is parallel to substrate 210, measure.Spiral circle 202 in conductor 100 has the number of turn " n1 ", represent that the complete number of turn in spiral part adds the decimal number of turn, and the spiral circle 218 of conductor group 216 has the number of turn " n2 ", represents that the complete number of turn in spiral part adds the decimal number of turn.Spiral circle 202 in conductor 100 has interval " s
thick", it measures in the direction that is parallel to substrate 210, and the spiral circle 218 of conductor group 216 has interval " s
thin", it measures in the direction that is parallel to substrate 210.Upper conductor 100 has thickness t
top1, it is greater than the thickness t of center conductor 102
bot1.Upper conductor thickness t
top1also be thicker than the thickness t of bottom spiral conductor 104
bot2and t
bot3.The thickness t of center conductor 102 and bottom conductor 104
bot1, t
bot2and t
bot3do not require equal.For illustrated object rather than be applied to restriction, upper conductor 100 can have approximately 2 to 4 μ m(microns) thickness, and each of center conductor 102 and bottom conductor 104 can have the thickness of approximately 0.2 to 1 μ m.
The width w of top spiral circle 202
thickbe less than the width w of the spiral circle 218 of conductor group 216
thin.For illustrated object rather than in order to limit, the width of top spiral circle can be approximately 5 μ m to 10 μ m, and comprises that each of conductor layer of the spiral circle 218 of conductor group 216 can have the width of approximately 5 to 50 μ m.
The interval s of the spiral circle 218 of conductor group 216
thinbe less than the interval s of the spiral circle 202 of upper conductor 100
thick.
Width and the interval of the conductor 102 and 104 conventionally, being all connected in parallel in each conductor group should have identical width w
thinwith interval s
thin.
The number of turn n1 of top spiral circle 202 is more than or equal to the number of turn n2 of the spiral circle 218 of spiral conductor group 216.
Therefore, the top spiral circle 202 of visible inductor 100 thicker, narrower and slightly loose ground winding than the spiral circle 218 of conductor group 216.
Top spiral conductor 100 is electrically connected in series with center conductor 102 by path 206.Center conductor 102 is electrically connected with bottom conductor 104 is in parallel by multiple paths 208.If there is more than one bottom conductor 104, each bottom conductor 104 is connected in parallel by path 208.Path 208 also can be rod.Bottom conductor 104 can increase, until the layer in the distribution of rear end is used up or until meets electric designing requirement.
Thicker but narrower top spiral circle 202 causes higher induction coefficient and higher Q.Spiral circle 218 has wider but thinner conductor.The wider conductor of spiral circle 218 causes higher Q.But the wider lower metal that is connected in parallel can reduce inductance density.By utilizing the advantage of less conductor to the wider conductor of conductor separation and spiral circle 218, improve inductance density.
Referring now to Fig. 3,, it shows another exemplary embodiment according to inductor of the present invention.Inductor 300 is similar to the inductor 200 in Fig. 2, and the inductor 300 in Fig. 3 comprises at least one additional top spiral conductor 302 now, adds top spiral conductor 302 and comprises spiral circle 306.Upper conductor 302 is electrically connected in series upper conductor 100.Upper conductor 302 is similar to upper conductor 100 and is that two upper conductor 100 are made up of thick conductor compared with all conductors in spiral conductor group 216 with 302.The thickness of spiral conductor 100 and 302 does not require equal, does not require width, interval and the equal turn numbers of spiral circle 202 and 306 yet.Two spiral circles 202 and 306 meet lower relation of plane for all conductors of the spiral circle 218 of conductor group 216: 1) width of spiral circle 202 and spiral circle 306 is less than the width of spiral circle 218; 2) interval of spiral circle 202 and spiral circle 306 is greater than the interval of spiral circle 218; 3) number of turn of spiral circle 202 and spiral circle 306 is more than or equal to the number of turn of spiral circle 218.
For the embodiment of the two thickness metals shown in embodiment and the Fig. 3 of the single thickness metal shown in Fig. 2, and for thering is M
totalthe embodiment (not shown) of (quantity of thick upper metallization layer), number of turn n1(M
totalthe number of turn in each of thick metal layers) and n2(under the number of turn in set of thin metal) can determine as follows.Referring to Fig. 2 and 3, for the example that is respectively single thickness and two thickness metal embodiments, designer can stipulate inductor 200(Fig. 2) or 300(Fig. 3) in total number of turns " N ".In preferred illustrative embodiment, be N/(M for the number of turn n2 of conductor group 216 each thin metal spirals
total+ 1), wherein n2 is the whole-number result except formula.N/(M
total+ 1) any decimal remainder staying except formula, R, is applied to n1.For conductor 100 and conductor 202(Fig. 2) or conductor 302(Fig. 3) number of turn n1, be N/(M
total+ 1) add the 1/M of remainder R
totaldoubly.Therefore, n1 can comprise decimal circle, and n2 only allows to comprise whole numbers of turns.
Referring to Fig. 2, show external diameter and the internal diameter of spiral conductor 100.Each spiral conductor 102,104 has external diameter and internal diameter similarly, does not for the sake of clarity illustrate.Inductor 200 also can have helical axis center line 222, and helical axis center line 222 represents that the half of circle of inductor 200 is in the left side of helical axis center line 222, and second half right side at helical axis center line 222 of the circle of inductor 200.Other inductor illustrating herein can be limited similarly by the helical axis center line of the external diameter of spiral inductor and internal diameter and inductor.
Referring to Fig. 7, it shows exemplary interfaces 700, for determining the number of turn at two thick metal inductance devices.This interface also can be used for the M that has describing in chapters and sections above
totalthe single thick metal inductance device of the suitable standard of parameter, to represent the quantity of thick metal layers.Once input the number of plies in total number of turns N and metal stack, can determine the number of turn of thick metal and thin metal.It is 5 layers that metal stack is illustrated in 702, represents that inductor is two thick metal layers and three thin metal spiral layers.Total number of turns N, being illustrated in 704 is 14.Calculation element can be used for following the algorithm showing above and determines that the thin metal number of turn is 4, is illustrated in 706.This number is 2 to produce by obtain result 4 and remainder R except N/3 or 14/3.Remainder is not included in the thin number of turn.Then, calculation element is used in the number of turn of determining thick metal in each of conductor 100 and 302, is 5 for each of sum 10, is illustrated in 708.This number is by adding that 0.5 times of remainder 2 obtains except N/3 or 14/3, is consequently 5 circles for each of thick metal layers.
Algorithm described above can be realized by one or more calculation elements, and calculation element is made up of microprocessor, random access memory, read-only memory and other parts.Computer can be personal computer, mainframe computer, kneetop computer or other calculation element.Intrinsic equipment or its ancillary equipment in computer can be the storage device of certain type, for example, and hard disk drive, floppy disk, CD-ROM drive, tape drive or other storage device.
Generally speaking, the implement software of exemplary embodiment can be visibly and non-being implemented in provisionally in computer-readable medium, for example, and one of above-mentioned storage device.Implement software can comprise instruction, can make calculation element carry out step or the required step of composition of realization example embodiment in the time that the microprocessor of calculation element reads and carries out.
Referring now to Fig. 4,, it shows the further exemplary embodiment according to inductor of the present invention.Inductor 400 is similar to the inductor 200 in Fig. 2, but has additional spiral conductor group 408.As shown in Figure 4, center conductor 102 and bottom conductor 104 form the group 216 of thin metal layer, comprise circle 218, and it is electrically connected in series top spiral conductor 100 by path 206, and top spiral conductor 100 comprises circle 202, as the situation of the inductor 200 in Fig. 2.Circle 412 and one or more bottom conductor 404 of the thin metal layer that inductor 400 comprises at least one additional group 408 now, comprise center conductor 402.Electric requirement can have the group 408 of other so thin metal layer, if if may show and the structure of rear end wiring layer may allow (supposing that this structure construction is on semiconductor-based bottom material).The thickness of conductor 102,104,402 and 404 does not require equal, and width, interval and the spiral number of turn in width, interval and the spiral number of turn and conductor group 408 in conductor group 216 do not require equal yet.Each spiral inductor layer in group 216 and 408 can have the thickness differing from one another, and its unitary request is that all spiral conductors in group 216 and 408 must be thinner than spiral conductor 100.The group 408 of thin metal layer is electrically connected in series thin metal layer group 216 by path 410.In thin metal layer group 408, each electrical connection in parallel of thin metal layer 402 and 404.Spiral circle 202 meets lower relation of plane to spiral circle 218 and 412: 1) width of spiral circle 202 is less than the width of spiral circle 218 and spiral circle 412; 2) interval of spiral circle 202 is greater than the interval of spiral circle 218 and spiral circle 412; 3) number of turn of spiral circle 202 is more than or equal to the number of turn of spiral circle 218 and spiral circle 412.
Referring now to Fig. 5,, it shows another exemplary embodiment according to inductor of the present invention.Inductor 500 is similar to the inductor 400 in Fig. 4, and the inductor 500 in Fig. 5 comprises that at least one additional top, thick spiral conductor 302, thick spiral conductor 302 comprise the spiral circle 306 that is similar to inductor 300 now.The thickness of spiral conductor 302 does not require the thickness that equals spiral inductor 100.Top spiral conductor 302 is electrically connected in series top spiral conductor 100 by path 304.Spiral circle 202 and spiral circle 306 meet lower relation of plane to spiral circle 218 and spiral circle 412: 1) width of spiral circle 202 and spiral circle 306 is less than the width of spiral circle 218 and spiral circle 412; 2) interval of spiral circle 202 and spiral circle 306 is greater than the interval of spiral circle 218 and spiral circle 412; 3) number of turn of spiral circle 202 and spiral circle 306 is greater than the number of turn of spiral circle 218 and spiral circle 412.
Discuss with reference to Fig. 2 to 5 pair of various exemplary embodiments.The inventor has proposed the method for determining conductor layer type and whether described layer serial or parallel connection is electrically connected the connection in series-parallel inductor for exemplary embodiment.The method as shown in Figure 6.
Referring now to Fig. 6,, it has described method 600.First, at piece 604 initiation parameters.The square resistance (rho) of top spiral conductor is set as " X ", and the metallization number of plies is set as " n ", and the metallization number of plies used is set as " 0 ", and total square resistance of inductor (" Tot_rho ") is set as very large numerical value, for example, and 1x10
10(i.e. 1e10 in figure).
Next as represented in decision block 606, judge whether that the metallization number of plies up to the present using equals " n ".If answer is "Yes", enter piece 608, program stopped, it is illustrated in to form in inductor and has used the available metallization number of plies, and there is no how available metal layer.If answer is "No", this process continues.
In following step, piece 614 is determined effective square resistance that remaining available thin metal layer (if there is) is connected in parallel with any thin metal layer of interpolation in parallel.This realizes by the square resistance effective in parallel that calculates all the other thin metal layers that are arranged in parallel with the value of Tot_rho, the value of any thin metal layer being connected in parallel of value representation of Tot_rho.
At decision block 616, the effective square resistance (Eff_rho) calculating in if block 614 is greater than the square resistance " X " of upper metallization layers, and enough thin metal layers do not exist, and process stops, and enters piece 618.But the effective square resistance calculating in if block 614 is less than or equal to " X " of upper metallization layers, this process proceeds to next step to increase more metal layer.
Next judge that total square resistance rho(is after a while for calculating because Multi-layer Parallel connects the total square rho causing) whether equal 1x10
10.In the time increasing by the first thin metal layer and run into decision block 620, total rho of inductor will equal initialization value 1x10
10, and therefore enter "Yes" passage.As shown in Fig. 2 to 5, this first thin metal layer is by the thick metal layer being connected in series to above.Thereafter, total rho value is set as the square resistance of thin metal layer, at piece 622, increases the metallization number of plies and the thin metal layer of series connection increase.Next, metal layer runs into decision block 620, and total rho has the square resistance of thin metal layer, and it is less than 1x10
10, and therefore enter "No" passage for ensuing thin metal layer.
Thereafter, decision block 624 judges whether total rho is less than or equal to " X ".If total rho is less than or equal to " X ", enter "Yes" passage, and at piece 626, the total rho value of being endowed 1x10
10.But, if total rho is greater than " X " value, enter "No" passage.At piece 628, the number of plies that increases thin metal layer and increase the metal layer using in parallel.Equation in piece 628-(1/ total _ rho) +=(1/ metal _ rho)-mean (1/ total _ rho)=(1/ total _ rho)+(1/ metal _ rho), it is the minimizing of calculating the total square resistance causing due to the increase of the thin metal of current parallel connection substantially.
This process continues until all thick and electric parallel connections of thin metal layer or series connection increases and the number of plies that metallizes equals the metallization number of plies that spiral can be used.
Should be understood that the inductor shown in Fig. 1 to 5 has only reacted the part of semiconductor structure in the time being structured on semiconductor base.This semiconductor structure also can comprise transistor, capacitor, resistor etc., and these devices are not for the sake of clarity shown.Should also be understood that forming after inductor shown in this article, can carry out conventional semiconductor processes.
Referring now to Fig. 8,, it shows the variety of option of single thick metal inductance device.In the left side of Fig. 8, schematically show for the multiple layer metal layer of an inductor structure stackingly 802, it comprises single thick metal layers 804(M4) and three thin metal layer 806(M1, M2, M3).Each of metal level 804,806 comprises the layer that wherein can form spiral conductor.Therefore, bottom spiral conductor can be formed in three thin metal layers 806, and top spiral conductor can be formed in thick metal layers 804.Variety of option comprises high L option 808, and it can only comprise metal level M4 and M3, high L and Q option 810, and it can comprise all metal level M1 to M4, and very high Q option 812, it also can comprise all metal level M1 to M4.Very high Q option 812 is compared the different formation factor having for the interval S between width W and the circle of every circle from high L and Q option 810.
The in the situation that of very high Q option 812, can have for the width of various metal levels 804,806 and circle to turn-to-turn every particular kind of relationship 814.For very high Q option, the width of various spiral conductors and circle to turn-to-turn every exact scale can determine in the following manner.
W
thick+S
thick=W
thin+S
thin
For thick and thin spiral inductor the two:
Internal diameter (ID)=external diameter (OD)-(2) (n1) (W
thick+ S
thick), the wherein number of turn of the topmost inductor of n1=inductor structure,
Interval=the S of thin metal
thin(by the he design rules specify for minimized intervals)
W
thin=（OD-ID）/n1）-S
thin。
Conventionally S,
thin<S
thick, and W
thin>W
thick.
Fig. 9 shows a kind of method with the various layers of non-high-frequency mode electrical connection, to form the current channel of the each option shown in Fig. 8.Fig. 9 is the sectional view of inductor, therefore can see every circle of inductor.For the sake of clarity, Fig. 9 also only shows inductor spiral half, as shown in helical axis center line, because spiral part is roughly axially symmetrical.For high L option 902, thick metal layers M4 can be connected to thin metal layer M3 by path 904.Current channel for this high L option is represented by arrow 906.Current channel 906 crosses thick metal spiral conductor layer M4 from electrode P1, by path 904, then crosses thin metal spiral inductor layers M3 to electrode P2 downwards.All thick metal spiral conductor layer M4, path 904 and thin metal spiral conductor layer M3 are electrically connected in series, and are therefore all connected in series to the current channel 906 of thin metal spiral conductor layer M3.
For high L and Q option 910, thick metal layers M4 can be connected to thin metal layer M3 by path 912.Each of thin metal layer M3, M2, M1 can be connected by multiple paths 914.Current channel for this high Q option is represented by arrow 916.Current channel 916, for to cross thick metal spiral inductor layers M4 from electrode P1, downwards by path 912, and enters in thin metal spiral conductor layer M3, M2, M1.M4 is connected in series to M3.Because all thin metal spiral conductor layer M3, M2, M1 are connected in parallel, current channel 916 parallel connections are electrically connected to electrode P2.All thick metal spiral conductor layer M4, path 912 and thin metal spiral conductor layer M3 are connected in series, and afterwards, current channel 916 becomes parallel circuits.
For very high Q option 920, current channel 922 is substantially the same with the current channel 916 of high L and Q option 910.Due to the constant pitch (width adds interval) in circle M4 and M1, M2, M3, the inductance density of very high Q option 920 and high L(902) with high L and Q(910) maintenance of option is roughly the same.Along with the increase of the width of layer M1, M2, M3 reduce simultaneously circle to turn-to-turn every, keep circle pitch, Q improves.These wider circle M1, M2, M3 present the lower series resistance to current channel 922, the Q of raising.
In preferred illustrative embodiment, the variety of option shown in Fig. 8 can be for high-frequency operation electrical connection as shown in figure 10.High-frequency operation refers to the operation under upper frequency compared with structure is attainable with Fig. 9 (non-high frequency).The high frequency performance of Fig. 9 structure is subject to the restriction of circle to turn to turn capacitance, and it causes structure self-resonance, makes it ineffective in certain frequency.The construction minimizes of Figure 10 circle to turn to turn capacitance, increased self-resonant frequency, and strengthened high frequency performance.
As shown in Figure 10, rearrange for the current channel of high-frequency operation, so that flow between the various metal levels of electric current in each spiral conductor circle.First referring to high L option one 002, thick metal layers M4 can receive thin metal layer M3 in every linkage by path 1004.For high especially L option one 002, in each of thick and thin metal layer, there are six circles, and every circle of thick metal layers M4 roughly aligns with the circle of thin metal layer M3.Current channel 1010 is from electrode P1 to thick top spiral metal layer M4(1006A) circle 1006A, by path 1004A to thin bottom spiral metal layer M3(1008A).Current channel advances to thin bottom spiral metal layer M3(1008B) adjacent turn, upwards by path 1004B to thick top spiral metal layer M4(1006B).Continue, current channel 1010 can be advanced and be striden across thick top spiral metal layer M4(1006C) adjacent turn, downwards by path 1004C to thin bottom spiral metal layer M3(1008C), and continuation is until all circles connect, and finishes after being connected to electrode P2.As visible, every circle 1006A, the 1006B of thick top spiral metal layer M4 and 1006C roughly align with every circle 1008A, 1008B and the 1008C of thin bottom spiral metal layer M3 respectively.All layer and paths are connected in series.
Referring now to high L and Q option one 020,, thick metal layers M4 can receive thin metal layer M3 in every linkage by path 1022.Thin metal layer M3, M2, M1 can be connected to each other at every circle by multiple paths 1024.For high especially L and Q option one 020, in each of thick and thin metal layer, have six circles, and every circle of thick metal layers M4 roughly aligns with the circle of thin metal layer M3, M2, M1.Current channel 1030 is from electrode P1 to thick top spiral metal layer M4(1026A) circle 1026A, by path 1022A to thin bottom spiral metal layer M3, M2, M1(1028A).Thin bottom spiral metal layer M3, M2, M11028 are connected in parallel.Current channel parallel connection advances to thin bottom spiral metal layer M3, M2, M1(1028B) adjacent turn, upwards by path 1022B to thick top spiral metal layer M4(1026B).Continue, current channel 1030 can be advanced and be striden across thick top spiral metal layer M4(1026C) adjacent turn, downwards by path 1022C to thin bottom spiral metal layer M3, M2, M1(1028C), and continuation is until all circles connect, and finishes being connected to after electrode P2.As visible, every circle 1026A, the 1026B of thick top spiral metal layer M4 and 1026C roughly align with every circle 1028A, 1028B and the 1028C of thin bottom spiral metal layer M3, M2, M1 respectively.
For very high Q option one 040, current channel 1042 is substantially the same with Q option one 020 with high L.It should be noted that because the difference between thick and thin metal layer forms factor, can there is some skew with the circle of thin bottom spiral metal layer in the circle of thick top spiral metal layer, but they seem roughly to align.Be similar to the very high Q option 920 in Fig. 9, Q improves, meanwhile, by increase circle that the width of in parallel stacking M1, M2, M3 circle reduces them simultaneously to turn-to-turn every keeping inductance density.
Referring now to Figure 11,, it shows the variety of option for two thick metal inductance devices.In the left side of Figure 11, schematically show the multiple-level stack for the metal level 1102 of inductor structure, it comprises two thick metal layers 1104(M5) and 1106(M4) and three thin metal layer 1108(M1, M2, M3).Each of metal level 1104,1106,1108 comprises the layer that wherein can form spiral inductor.Therefore, bottom spiral conductor can be formed in three thin metal layers 1108, and top spiral conductor can be formed in two thick metal layers 1104,1106.Variety of option comprises high L option one 110, high L option one 110 can only comprise metal level M5, M4 and M3, high L and Q option one 112, and high L and Q option one 112 can comprise all metal level M1 to M5, and very high Q option one 114, very high Q option one 114 also can comprise all metal level M1 to M5.Very high Q option one 114 has the different formation factor for the interval S between width W and the circle of every circle compared to high L and Q option one 112.The in the situation that of very high Q option one 114, for the width of various metal levels 1104,1106,1108 and circle to turn-to-turn every thering is particular kind of relationship 1116.For very high Q option for the width of various spiral inductors and circle to turn-to-turn every exact scale can determine in the following manner.
W
thick+S
thick=W
thin+S
thin
For thick and thin spiral inductor the two:
Internal diameter (ID)=external diameter (OD)-(2) (1) (W
thick+ S
thick), the wherein number of turn of the topmost conductor of n1=inductor structure,
Interval=the S of thin metal
thin(by the he design rules specify for minimized intervals)
W
thin=（OD-ID）/n1）-S
thin。
Conventionally S,
thin<S
thick, and W
thin>W
thick.
Figure 12 shows a kind of method with the various layers of non-high-frequency mode electrical connection, is formed for the current channel of the each option shown in Figure 11.Figure 12 is the sectional view of transversal half inductor, as shown in helical axis center line, therefore can see every circle of inductor.For high L option one 202, thick metal layers M5 can be connected to thick metal layers M4 by path 1204, is then connected to thin metal layer M3 by path 1206.Current channel for this high L option is represented by arrow 1210.Current channel 1210 crosses thick metal spiral conductor layer M5 from electrode P1, by path 1204, returns to cross thick metal spiral conductor layer M4 downwards, by path 1206, then crosses thin metal spiral conductor layer M3 to electrode P2 downwards.All thick metal spiral conductor layer M5, path 1204, thick metal spiral conductor layer M4, path 1206 and thin metal spiral conductor layer M3 are electrically connected in series, and therefore current channel 1210 is electrically connected in series completely.
For high L and Q option one 220, thick metal layers M5 can be connected to thick metal layers M4 by path 1222, and thick metal layers M4 can be connected to thin metal layer M3 by path 1224.Each of thin metal layer M3, M2, M1 can be connected by multiple paths 1226.Current channel for this high Q option is represented by arrow 1230.Current channel 1230 crosses thick metal spiral conductor layer M5 from electrode P1, downwards by path 1222 to thick metal spiral conductor layer M4, downwards by path 1224, and enters in thin metal spiral conductor layer M3, M2, M1.M5 and M4 are electrically connected in series M3.Because all thin metal spiral conductor layer M3, M2, M1 are connected in parallel, by descending most the current channel 1230 of spiral layers in parallel with electrode P2.All thick metal spiral conductor layer M5, path 1222, thick metal spiral conductor layer M4, path 1224 and thin metal spiral conductor layer M3 are connected in series, and the current channel 1230 that therefore arrives thin metal spiral conductor layer M3 is all connected, afterwards, current channel becomes parallel circuits.
For very high Q option one 240, current channel 1242 is substantially the same with Q option one 220 with high L.1040 similar with very high Q option 920 in Fig. 9 and Figure 10, Q improves, meanwhile, by increase circle that the width of stacked in parallel M1, M2, M3 circle reduces them simultaneously to turn-to-turn every keeping inductance density.
In preferred illustrative embodiment, the variety of option shown in Figure 11 can be electrically connected high-frequency operation as shown in figure 13.As shown in Figure 13, rearrange for the current channel of high-frequency operation, so that between the various metal levels of current flowing in every circle of spiral conductor, the situation of single thickness metal embodiments as shown in Figure 10.First referring to high L option one 302, thick metal layers M5 can receive thick metal layers M4 in every linkage by path 1304, and thick metal layers M4 can receive thin metal layer M3 in every linkage by path 1306.For high especially L option one 302, in each of thick and thin metal layer, have six circles, and every circle of thick metal layers M5 and M4 roughly aligns with the circle of thin metal layer M3.Current channel 1310 is from electrode P1 to thick top spiral metal layer M5(1308A) circle 1308A, by path 1304A to thick top spiral metal layer M4(1312A) circle 1312A, by path 1306A to thin bottom spiral metal layer M3(1314A).Current channel advances to thin bottom spiral metal layer M3(1314B) adjacent turn, upwards by path 1306B to thick top spiral metal layer M4(1312B), upwards by path 1304B to thick top spiral metal layer M5(1308B).Continue, current channel 1310 can be advanced and be striden across thick top spiral metal layer M5(1308C) adjacent turn, arrive thick top spiral metal layer M4(1312C by path 1304C downwards), arrive thin bottom spiral metal layer M3(1314C by path 1306C downwards) etc., until all circles connect, and finish being connected to after electrode P2.As visible, every circle 1312A, the 1312B of every circle 1308A, the 1308B of thick top spiral metal layer M5 and 1308C and thick top spiral metal layer M4 and 1312C roughly align with every circle 1312A, 1312B and the 1312C of thin bottom spiral metal layer M3 respectively.All layer and paths are connected in series.
Referring now to high L and Q option one 320,, thick metal layers M5 can receive thick metal layers M4 in every linkage by path 1324, and thick metal layers M4 can receive thin metal layer M3 in every linkage by path 1326.Thin metal layer M3, M2, M1 can be connected to each other at every circle by multiple paths 1330.For high especially L and Q option one 320, in each of thick and thin metal layer, have six circles, and an every circle of thick metal layers M4 and M5 and thin metal layer M3, M2, M1(1328) circle roughly align.Current channel 1330 is from electrode P1 to thick top spiral metal layer M5(1332A) circle 1332A, by path 1324A to thick top spiral metal layer M4(1334A) circle 1334A, by path 1326A to thin bottom spiral metal layer M3, M2, M1(1328A).Thin bottom spiral metal layer M3, M2, M1(1328A) be connected in parallel.Parallel thin bottom spiral metal layer M3, M2, the M1(1328B of advancing to of current channel) adjacent turn, upwards by path 1326B to thick top spiral metal layer M4(1334B), upwards by path 1324B to thick top spiral metal layer M5(1332B).Continue, current channel 1330 can be advanced and be striden across thick top spiral metal layer M5(1332C) adjacent turn, arrive thick top spiral metal layer M4(1334C by path 1324C downwards), arrive thin bottom spiral metal layer M3, M2, M1(1328C by path 1326C downwards) etc., until all circles connect, and finish being connected to after electrode P2.As visible, every circle 1334A, the 1334B of every circle 1332A, the 1332B of thick top spiral metal layer M5 and 1332C and thick top spiral metal layer M4 and 1334C roughly align with every circle 1328A, 1328B and the 1328C of thin bottom spiral metal layer M3, M2, M1 respectively.
For very high Q option one 340, current channel 1342 is substantially the same with high Q option one 320.It should be noted that due to formation factors different between thick and thin metal layer, for the circle of thick top spiral metal layer and some skew of the circle of thin bottom spiral metal layer, but they seem roughly to align.1240 similar with 1040 and Figure 12 in very high Q option 920, Figure 10 in Fig. 9, Q improves, meanwhile, by increase circle that the width of M1, M2, M3 circle of stacked in parallel reduces them simultaneously to turn-to-turn every keeping inductance density.
Those skilled in the art, by clear, after with reference to the disclosure, can be made at the improvement of other exemplary embodiment outside the specifically described embodiment of this paper, and do not depart from spirit of the present invention.Therefore, such improvement also should belong to the scope of the present invention limiting as claims.
The application requires the name of submission on January 24th, 2011 to be called the U.S. Patent application sequence No.13/012 of " Inductor Structure Having Increased Inductance Density and Quality Factor ", 027 priority, its content is incorporated to this specification by reference.
Claims (24)
1. an inductor structure, comprising:
Base material;
Multiple bottoms spiral conductor, has the spiral part that is arranged on the first number of turn n2 on this base material, and the plurality of bottom spiral conductor has the thickness t of measuring in the direction vertical with this base material
bot1, t
bot2... t
botn, and there is width W
thinwith circle to turn-to-turn every S
thin, wherein width W
thinwith circle to turn-to-turn every S
thinin the direction that is parallel to this base material, measure;
At least one top spiral conductor, has the spiral part of the second number of turn n1 contacting with the plurality of bottom spiral conductor, and this at least one top spiral conductor has the thickness t of measuring in the direction vertical with this base material
top1, and there is width W
thickwith circle to turn-to-turn every S
thick, wherein this width W
thickwith circle to turn-to-turn every S
thickin the direction that is parallel to this base material, measure, thus t
top1be greater than t
bot1, t
bot2... t
botn; And
Dielectric substance, separately this bottom spiral conductor and this top spiral conductor;
One circle of every circle of this at least one top spiral conductor and the plurality of bottom spiral conductor is axially aligned, the circle of axially aligning that this inductor structure has from a circle of this at least one top spiral conductor to the plurality of bottom spiral conductor is axially aligned the current channel of circle to the next circle of this top spiral conductor to the next circle of the plurality of bottom spiral conductor to this at least one top spiral conductor, and this current channel continues until by all circles of this at least one top spiral conductor and the plurality of bottom conductor.
2. inductor as claimed in claim 1, wherein each layer of the plurality of bottom spiral conductor have common width and common circle to turn-to-turn every.
3. inductor as claimed in claim 1, wherein there is only a top spiral conductor and multiple bottoms spiral conductor, and this current channel of the identical circle of multiple bottom spiral conductor from a circle of this top spiral conductor to alignment is electrically connected in series, and all electrical connections in parallel of current channel in the identical circle of the plurality of bottom spiral conductor.
4. inductor as claimed in claim 3, wherein from a circle of multiple bottoms spiral conductor to all electrical connections in parallel of this current channel in the next circle of multiple bottoms spiral conductor.
5. inductor as claimed in claim 1, wherein exists and has thickness t
top1, t
top2... t
topnmultiple tops spiral conductor, make t
top1, t
top2... t
topn>t
bot1, t
bot2... t
botn.
6. inductor as claimed in claim 1, wherein there is multiple tops spiral conductor and multiple bottoms spiral conductor, and this current channel the identical circle of the multiple bottoms spiral conductor from the circle of top spiral conductor to alignment connect, and all in parallel electrical connections of this current channel in the identical circle of the plurality of bottom spiral conductor.
7. inductor as claimed in claim 6, wherein this current channel in this identical circle of the plurality of top spiral conductor is all electrically connected in series.
8. inductor as claimed in claim 6, wherein from circle of multiple bottoms spiral conductor to all electrical connections in parallel of this current channel in the next circle of multiple bottoms spiral conductor.
9. inductor as claimed in claim 3, also comprises multiple paths, and the identical circle of the plurality of bottom spiral conductor received a linkage of this top spiral conductor by wherein one or more paths.
10. inductor as claimed in claim 9, wherein some paths of the plurality of path connect each bottom spiral conductor in identical circle.
11. inductors as claimed in claim 6, also comprise multiple paths, the identical circle of top spiral conductor of alignment received the linkage of one of this top spiral conductor by wherein one or more paths, and the identical circle of the alignment circle of bottom spiral conductor received a linkage of this top spiral conductor by one or more path.
12. inductors as claimed in claim 11, wherein some paths of the plurality of path connect each bottom spiral conductor in identical circle.
13. inductors as claimed in claim 1, wherein this at least one top spiral conductor and the plurality of bottom spiral conductor comprise copper.
14. inductors as claimed in claim 1, wherein this base material is insulating material.
15. inductors as claimed in claim 1, wherein this base material is semi-conducting material.
16. inductors as claimed in claim 1, wherein each width W of the plurality of bottom spiral conductor
thinbe greater than the width W of this at least one top spiral conductor
thick, and wherein each circle of the plurality of bottom spiral conductor to turn-to-turn every S
thinthe circle that is less than this at least one top spiral conductor to turn-to-turn every S
thick, and wherein this inductor has external diameter OD, and inner diameter, ID, make:
W
thick+S
thick=W
thin+S
thin，
ID=OD-(2) (n1) (W
thick+ S
thick), the wherein number of turn of the topmost conductor of this inductor structure of n1=,
S
thinby the he design rules specify of minimized intervals, and
W
thin=（（OD-ID）/n1）-S
thin。
, wherein there is multiple tops spiral conductor in 17. inductors as claimed in claim 16, its each there is width W
thick, and circle to turn-to-turn every S
thick.
18. an inductor structure, comprising:
Base material;
Multiple bottoms spiral conductor, has the spiral part that is arranged on first number of turn on this base material, and the plurality of bottom spiral conductor has the thickness t of measuring in the direction vertical with this base material
bot1, t
bot2... t
botn;
At least one top spiral conductor, has the spiral part of second number of turn contacting with the plurality of bottom spiral conductor, and this at least one top spiral conductor has the thickness t of measuring in the direction vertical with this base material
top1, make t
top1be greater than t
bot1, t
bot2... t
botn; And
Dielectric substance, separately this bottom spiral conductor and this top spiral conductor;
One circle of every circle of this at least one top spiral conductor and the plurality of bottom spiral conductor is axially aligned, the circle of axially aligning that this inductor structure has from a circle of this at least one top spiral conductor to the plurality of bottom spiral conductor is axially aligned the current channel of circle to next circle of this top spiral conductor to next circle of the plurality of bottom spiral conductor to this at least one top spiral conductor, and this current channel continues until by all circles of this at least one top spiral conductor and the plurality of bottom conductor, wherein each of each the plurality of bottom spiral conductor and at least one top spiral conductor have the width measured in the direction that is parallel to this base material and circle to turn-to-turn every, wherein each width W of the plurality of bottom spiral conductor
thinbe greater than the width W of this at least one top spiral conductor
thick, and wherein each this circle of the plurality of bottom spiral conductor to turn-to-turn every S
thinthis circle that is less than this at least one top spiral conductor to turn-to-turn every S
thick, and wherein this inductor has external diameter OD, and inner diameter, ID, make:
W
thick+S
thick=W
thin+S
thin，
ID=OD-(2) (n1) (W
thick+ S
thick), the wherein number of turn of the topmost conductor of this inductor structure of n1=,
S
thinby the he design rules specify of minimized intervals, and
W
thin=（（OD-ID）/n1）-S
thin。
, wherein there is multiple tops spiral conductor in 19. inductors as claimed in claim 18, its each there is width W
thickwith circle to turn-to-turn every S
thick.
20. inductors as claimed in claim 18, wherein exist and have thickness t
top1, t
top2... t
topnmultiple tops spiral conductor, make t
top1, t
top2... t
topn>t
bot1, t
bot2... t
botn.
21. 1 kinds are designed the method for inductor structure, comprising:
Inductor structure is provided, and this inductor structure comprises:
Base material;
Be arranged at least one the bottom spiral conductor on this base material, this at least one bottom spiral conductor has thickness t
bot1, width w
thinwith circle to turn-to-turn every s
thin;
At least one top spiral conductor, contacts with this at least one bottom spiral conductor, and this at least one top spiral conductor has thickness t
top1, width w
thickwith circle to turn-to-turn every s
thick, wherein M
totalrepresent the total number of turns of top spiral conductor; And
Dielectric substance, separately this bottom spiral conductor and this top spiral conductor;
In this inductor structure, stipulate total number of turns N;
Determine the number of turn n1 of topmost conductor, and each number of turn n2 of the plurality of bottom spiral conductor, making n2 is N/(M
total+ 1), wherein n2 is the whole-number result except formula, and from removing formula N/(M
total+ 1) remainder R of remaining any decimal is applied to n1, and making n1 is N/(M
total+ 1) add the 1/M of remainder R
totaldoubly, wherein n1 can comprise decimal circle, and wherein n2 only allows to comprise whole numbers of turns;
Wherein the method is carried out on one or more calculation elements.
22. methods as claimed in claim 21, wherein exist and have thickness t
top1, t
top2... t
topnmultiple tops spiral conductor and there is thickness t
bot1, t
bot2... t
botnmultiple bottoms spiral conductor, make t
top1, t
top2... t
topn>t
bot1, t
bot2... t
botn.
23. method as claimed in claim 22, wherein t
top1, t
top2... t
topn>t
bot1, t
bot2... t
botn, w
thin>w
thick, and s
thin<s
thick.
24. methods as claimed in claim 22, wherein each of at least one top spiral conductor of each and this of the plurality of bottom spiral conductor have the circle measured in the direction that is parallel to this base material to turn-to-turn every and width, wherein each width W of the plurality of bottom spiral conductor
thinbe greater than this width W of this at least one top spiral conductor
thick, and wherein each this circle of the plurality of bottom spiral conductor to turn-to-turn every S
thinthis circle that is less than this at least one top spiral conductor to turn-to-turn every S
thick, and wherein this inductor has external diameter OD, and inner diameter, ID, and comprise definite W
thick, S
thick, W
thinand S
thinas follows:
W
thick+S
thick=W
thin+S
thin，
ID=OD-（2）（n1）（W
thick+S
thick），
S
thinby the he design rules specify of minimized intervals, and
W
thin=（（OD-ID）/n1）-S
thin。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/718,701 US9105381B2 (en) | 2011-01-24 | 2012-12-18 | High frequency inductor structure having increased inductance density and quality factor |
| US13/718,701 | 2012-12-18 |
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| US20170372833A1 (en) * | 2016-06-24 | 2017-12-28 | Samsung Electro-Mechanics Co., Ltd. | Power inductor with a chip structure |
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| US20030116850A1 (en) * | 2001-12-21 | 2003-06-26 | International Business Machines Corporation | Multi-level RF passive device |
| US7262680B2 (en) * | 2004-02-27 | 2007-08-28 | Illinois Institute Of Technology | Compact inductor with stacked via magnetic cores for integrated circuits |
| TWI296845B (en) * | 2006-05-17 | 2008-05-11 | Via Tech Inc | Multilayer winding inductor |
| US20110109415A1 (en) * | 2009-11-12 | 2011-05-12 | Jenq-Gong Duh | Inductor structure |
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2013
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|---|---|---|---|---|
| US20030116850A1 (en) * | 2001-12-21 | 2003-06-26 | International Business Machines Corporation | Multi-level RF passive device |
| US7262680B2 (en) * | 2004-02-27 | 2007-08-28 | Illinois Institute Of Technology | Compact inductor with stacked via magnetic cores for integrated circuits |
| TWI296845B (en) * | 2006-05-17 | 2008-05-11 | Via Tech Inc | Multilayer winding inductor |
| US20110109415A1 (en) * | 2009-11-12 | 2011-05-12 | Jenq-Gong Duh | Inductor structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20170372833A1 (en) * | 2016-06-24 | 2017-12-28 | Samsung Electro-Mechanics Co., Ltd. | Power inductor with a chip structure |
| US10566128B2 (en) * | 2016-06-24 | 2020-02-18 | Samsung Electro-Mechanics Co., Ltd. | Power inductor with a chip structure |
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