CN103864413B - Dielectric ceramic powder composition and temperature compensation type laminated ceramic capacitor made of same - Google Patents
Dielectric ceramic powder composition and temperature compensation type laminated ceramic capacitor made of same Download PDFInfo
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- CN103864413B CN103864413B CN201310029693.2A CN201310029693A CN103864413B CN 103864413 B CN103864413 B CN 103864413B CN 201310029693 A CN201310029693 A CN 201310029693A CN 103864413 B CN103864413 B CN 103864413B
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- 239000000203 mixture Substances 0.000 title claims abstract description 66
- 239000000843 powder Substances 0.000 title claims abstract description 32
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 24
- 239000000919 ceramic Substances 0.000 title claims abstract description 8
- 239000011521 glass Substances 0.000 claims abstract description 18
- 238000005245 sintering Methods 0.000 claims abstract description 10
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 229910052573 porcelain Inorganic materials 0.000 claims description 29
- 238000010304 firing Methods 0.000 claims description 14
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000005303 weighing Methods 0.000 claims description 4
- 229920002472 Starch Polymers 0.000 claims description 3
- 238000000498 ball milling Methods 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 239000008107 starch Substances 0.000 claims description 3
- 235000019698 starch Nutrition 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- -1 butyl benzyl phthalate ester Chemical class 0.000 claims description 2
- 238000001354 calcination Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 238000003837 high-temperature calcination Methods 0.000 claims description 2
- IRIAEXORFWYRCZ-UHFFFAOYSA-N n-butyl benzyl phthalate Natural products CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 238000010791 quenching Methods 0.000 claims description 2
- 230000000171 quenching effect Effects 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 31
- 239000011787 zinc oxide Substances 0.000 description 15
- 239000000292 calcium oxide Substances 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 229910052793 cadmium Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052745 lead Inorganic materials 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 210000001161 mammalian embryo Anatomy 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 229910019440 Mg(OH) Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000037396 body weight Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
The invention relates to a dielectric ceramic powder composition and a temperature compensation type laminated ceramic capacitor made of the dielectric ceramic powder composition, wherein the sintering temperature is below 1000 ℃, and the dielectric ceramic powder composition can be matched with an internal electrode of 90% Ag/10% Pd to make the laminated ceramic capacitor. The dielectric ceramic powder composition comprises 100 parts by weight of MgO in a mole, ZnO in a mole b, CaO in a mole c, BaO in a mole d and TiO in a mole m2The first component and 1.5-16 weight portions of BaO and SiO2ZnO, MnO and B2O3A glass frit of a second composition; wherein m = B/A = TiO2The mole number/(MgO + ZnO + CaO + BaO), a + b + c + d =1, a is more than or equal to 0.05 and less than or equal to 0.40, b is more than or equal to 0.40 and less than or equal to 0.85, c is more than or equal to 0.04 and less than or equal to 0.11, d is more than or equal to 0.00 and less than or equal to 0.30, and m is more than or equal to 0.6 and less than or equal to 2.0.
Description
Technical field
The present invention relates to ceramic capacitor field, particularly dielectric porcelain powder composition and the temperature compensating type monolithic ceramic capacitor made thereof.
Background technology
The dielectric constant height that general ceramic capacitor forms according to porcelain powder can be divided into three classes: high-k type (Hi-K), medium dielectric constant microwave medium type (Mid-K) and temperature compensating type (TC).The dielectric constant of high-k type reaches 4000 ~ 15000, the change of dielectric constant with temperature and altering a great deal.The dielectric constant about 1400 ~ 3000 of medium dielectric constant microwave medium type, the change of dielectric constant with temperature is less but be often nonlinear change.The dielectric constant about 8 ~ 100 of temperature compensating type, the change of dielectric constant with temperature is minimum and be often linear change.
The interior electrode of monolithic ceramic capacitor and ceramic dielectric layers must together be total to burning, therefore, the porcelain powder composition of common commercial monolithic ceramic capacitor can generally be divided into high temperature to burn till type and two kinds, easy fired type according to firing temperature, high temperature burns till the firing temperature of type about 1250 DEG C ~ 1300 DEG C, because its firing temperature is higher, therefore in it, electrode generally need adopt fusing point higher and expensive palladium (Pd) is metal.Easy fired type is because firing temperature is below 1150 DEG C, therefore in it, electrode can adopt low price and the higher silver palladium alloy metal (Ag/Pd) of silver content reduces costs and less expensive.
Though the dielectric constant of general temperature compensation type capacitor porcelain powder composition is between 8 ~ 100, but current art is when manufacturing the low capacitance NP0 monolithic ceramic capacitor of below 100pF, if the dielectric constant of porcelain powder is higher, then because the lamination number of plies is less, manufacturing process controls not easily, and the capacitance of ceramic condenser often departs from specification value so that yield is on the low side; If the porcelain powder selecting dielectric constant lower, then because the lamination number of plies is more, consumption silver-palladium inner electrode is more, so that inner electrode cost improves, therefore existing manufacture below 100pF monolithic ceramic capacitor often select dielectric constant be 15 ~ 45 porcelain powder manufacture, to obtain most suitably economical production.
General easy fired type dielectric porcelain powder composition normally adds various sintering aid (Sintering aid) again with the main composition that high temperature burns till, such as glass (glass), glass frit (frit) or flux (flux) etc. are to reduce firing temperature, general glass or glass frit are all containing the low melting point such as Pb or Cd or Bi composition, and Pb, Cd are to environmental ecology harmful substance.
About easy fired temperature compensating type ceramic capacitor constituent, U.S. patent Nos the 4th, 506, No. 026 disclose a kind of by main composition MgO-CaO-TiO
2-Al
2o
3-SiO
2-Nb
2o
5with secondary composition PbO-Bi
2o
3-CdO-ZnO-SiO
2-B
2o
3glass and the 5th, 599, No. 757 disclose a kind of by main composition BaO-TiO
2-ZrO
2-SiO
2with secondary composition PbO-TiO
2-ZrO
2-Al
2o
3-LiF-SiO
2-B
2o
3the constituent that glass is formed, meets the NP0 specification requirement of E.I.A, but its firing temperature all must more than 1100 DEG C and porcelain powder composition all contain Pb or Cd to environmentally hazardous substance.Therefore firing temperature is less than 1000 DEG C, and with MgO-ZnO-CaO-BaO-TiO
2be that main composition adds BaO-SiO
2-ZnO-MnO-B
2o
3not yet not occurring containing the monolithic ceramic capacitor porcelain powder composition of Pb, Cd, Bi of the secondary composition of frit.
In response to environmental protection trend, develop and do not have its necessity containing the dielectric porcelain powder composition of Pb, Cd.
Summary of the invention
The present invention selects suitable landlord's component system, add and containing the sintering aid of Pb, Cd, sintering temperature is not reduced to less than 1000 DEG C, thus electrode in the 90%Ag/10%Pd more inexpensive compared with 70%Ag/30%Pd can be selected to reduce costs the more economical monolithic ceramic capacitor of manufacture.
Object of the present invention is namely a kind of in exploitation can be 1000 DEG C of dielectric porcelain powder compositions burning till monolithic ceramic capacitor in sintering temperature, and not leaded, the composition such as cadmium, bismuth, and the dielectric constant of its electrical characteristic can reach 25 ~ 40, Q value is more than 1000, temperature coefficient meets the NP0 specification of E.I.A., namely, within 0 ± 30ppm/ DEG C, this dielectric porcelain powder composition is suitable for for manufacturing temperature compensating type monolithic ceramic capacitor.
In order to achieve the above object, the present invention proposes the dielectric porcelain powder composition of the monolithic ceramic capacitor of firing low-k, is 0.05≤MgO≤0.40 by each mole ratio that has of 100 weight portions, 0.40≤ZnO≤0.85,0.04≤CaO≤0.11,0.00≤BaO≤0.30,0.6≤TiO
2≤ 2.0, with 1.5 ~ 16 weight portions by BaO, SiO
2, ZnO, MnO and B
2o
3the glass frit (frit) of the second composition formed, wherein, glass frit (frit) consist of 10%≤BaO≤60%, 5%≤SiO
2≤ 30%, 5%≤ZnO≤30%, 0%≤MnO≤10%, 15%≤B
2o
3≤ 60%.
According to above compositing range, be with MgTiO
3, ZnTiO
3, CaTiO
3, BaTi
4o
9, Ba
2ti
9o
20carry out acting in conjunction and reduce below sintering temperature to 1000 DEG C etc. adding frit for main composition, and improve sintered body compactness.Control different MgTiO
3, ZnTiO
3, CaTiO
3, BaTi
4o
9, Ba
2ti
9o
20content ratio, adjustable dielectric constant and capacitance temperature coefficient; Add glass frit and can improve sintered density, promote insulation resistance.
For disclosing the technology contents of this case further, refer to following embodiment:
Embodiment
Below the technical scheme in the embodiment of the present invention is clearly and completely described.Obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
With BaCO
3(brium carbonate), ZnO(zinc oxide), Mg (OH)
2(magnesium hydroxide) or MgCO
3(magnesium carbonate), CaCO
3(calcium carbonate), TiO
2(titanium oxide) is initiation material, according to the proportion of composing weighing shown in table 1, wet mixed 16 hours in ball milling, to pour out after oven dry with more than 1050 DEG C high-temperature calcinations 2 hours in kiln, calcining material is finely ground to less than 1.0 μm as the first composition in the present invention through coarse crushing again.
The glass frit (frit) of the second composition is then with zinc oxide (ZnO), brium carbonate (BaCO
3), manganese carbonate (MnCO
3), boric acid (H
3bO
3), silica (SiO
2) be initiation material, and according to 10%≤BaO≤60%, 5%≤SiO
2≤ 30%, 5%≤ZnO≤30%, 0%≤MnO≤10%, 15%≤B
2o
3the formula composition of the summation 100% of≤60%, after ratio weighing, mixing, oven dry, is finely ground to less than 1.5 μm through coarse crushing again at 1100 DEG C of melt water quenchings.
Again according to the part by weight of table 2, weighing first composition and the second composition, and in ball milling wet mixed 16 hours, namely obtain end formulation powder after oven dry.20% is added into again containing 10% polyvinyl alcohol (polyvinyl alcohol, i.e. PVA) solution, after giving granulation, with 1.5Ton/cm in this formula powder
2pressure be pressed into diameter 10mm, the raw embryo sheet of the circular plate type of thick 0.5mm, sinters 2 hours at the temperature of about 1000 DEG C.After attached electrode is burnt on sintered body two sides, measure its electrical and sintered density according to following test condition: i.e. frequency 1MHz, test voltage 1Vrms, measure capacitance and also calculate DIELECTRIC CONSTANT ε and measure D.F. value (i.e. dissipation factor tan δ); With direct voltage 500V, charge 1 minute, temperature 25 DEG C, measures resistance value; With the capacitance of 25 DEG C for benchmark, capacitance temperature variation coefficient when measuring-55 DEG C to 125 DEG C; Whether measurement sintered body weight and volume calculate sintered density, and observe sintered body microstructure by light microscope (OM), comprehensively analyzed to form to meet the requirements by these data.
Above-mentioned test portion formula can make monolithic ceramic capacitor more further, its method is as follows: to formula powder 100 weight portion, add by polymethyl methacrylate 10 parts, butanone/alcohol solvent 30 parts, the organic binder bond that the compositions such as butyl benzyl phthalate ester 4 parts form, to put in ball mill Homogeneous phase mixing 16 hours, make castable porcelain to starch, again porcelain slurry is put into coating machine, porcelain is starched to be uniformly coated on substrate, the dielectric layer thickness of each coating about 20 μm ~ 30 μm, after drying through 80 DEG C, republish the inner electrode layer that inner electrode composition is 90%Ag/10%Pd, after repetition like this reaches required thickness and the number of plies for several times, again this formed body is cut into the raw embryo chip of 4.0L × 2.0Wmm size, this raw embryo chip is first through lower than 500 DEG C of ungrease treatments after 80 hours, 3 hours are sintered at 960 DEG C ~ 1000 DEG C temperature, die size after sintering is about 3.2L × 1.6Wmm, burn attached through external electrode again, according to following test condition: frequency 1MHz, test voltage 1Vrms, measure D.F value and capacitance and calculate its DIELECTRIC CONSTANT ε value, with direct voltage 50V, charge after 1 minute, measure insulating resistance value, raise direct voltage with the speed of 100V per second, measure its disintegration voltage, with the capacitance of 25 DEG C for benchmark, capacitance temperature variation coefficient when measuring-55 DEG C to 125 DEG C carrys out the electrical characteristic of full assessment monolithic ceramic capacitor.The present embodiment result is as shown in table 3.
The present invention is with dielectric constant 25 ~ 40, capacitance temperature factor meets NP0 specification (namely-55 DEG C ~ 125 DEG C, 0 ± 30ppm), and D.F value (i.e. dissipation factor t an δ) is less than 0.001, insulation resistance is at 1 × 1011 more than Ω, and sintered density reaches more than 4.25g/cm3 for target.Except test portion 1, test portion 7, test portion 8, test portion 12, test portion 14, test portion 16, test portion 17, test portion 19, test portion 21, test portion 22 and test portion 26 cannot except targets according to the invention in the test portion of table 2, all the other test portions all can meet target, therefore just ask the reason of scope to be described below below:
Shown in test portion 1, when frit=1 weight portion, the too high and sintered density of D.F value all comparatively desired value is low, shown in test portion 7, when frit=20 weight portion, sintering produces glutinous sheet phenomenon so that cannot measure electrically, represent that glass frit is excessive, and during the weight portion of frit=2 ~ 16, all can meet desired value, therefore, the suitableeest addition scope of frit is 1.5%≤frit≤16.0%.
Test portion 8 ~ test portion 26 mainly at the MgO of adjustment first composition, ZnO, CaO, BaO and TiO
2ratio, to seek optimum range, in this scope, test portion all can meet the electrical characteristic of target, sintered density and microscopic structure.
Shown in test portion 8 and test portion 12, there is as MgO=0m/o D.F value too high, do not meet NPO characteristic requirements.Or as MgO=50m/o, sinter not good cause sintered density difference and IR is not good and D.F is bad, as MgO=5m/o ~ 40m/o, every character all meets desired value, therefore the suitableeest scope of MgO is 5m/o≤MgO≤40m/o.
Shown in test portion 14 and test portion 16, as ZnO=32.5m/o, D.F value departs from desired value, as ZnO=87.5m/o, D.F value also departs from desired value, as ZnO=42.5m/o ~ 82.5m/o, every character all meets desired value, therefore the suitableeest scope of ZnO is 40m/o≤ZnO≤85m/o.
Shown in test portion 17 and test portion 19, as CaO=3.7m/o, temperature coefficient departs from desired value, as CaO=11.2m/o, temperature coefficient also departs from desired value, as CaO=5.2m/o ~ 9.5m/o, every character all meets desired value, therefore the suitableeest scope of CaO is 4m/o≤CaO≤11m/o.
Shown in test portion 21, as BaO=40m/o, have the too high phenomenon not meeting NPO characteristic requirements of D.F value, as BaO=0m/o ~ 30m/o, every character all meets desired value, therefore the suitableeest scope of BaO is 0m/o≤BaO≤30m/o.
Shown in test portion 22 and test portion 26, work as m=TiO
2during molal quantity/(MgO+ZnO+CaO+BaO) molal quantity=0.59, D.F value is too high exceeds desired value, as m=2.50, temperature coefficient is had to depart from the phenomenon of desired value far away, when m=0.67 ~ 2.00, every character all meets desired value, therefore the suitableeest scope of m is 0.60≤m≤2.00.
First composition proportion scale of table 1 test portion 10
| Raw material | Weight | After burning | Weight | Molal quantity | Mol ratio |
| Mg(OH) 2 | 1.17kg | MgO | 0.81kg | 20 | a=0.10 |
| ZnO | 10.17kg | ZnO | 10.17kg | 125 | b=0.625 |
| CaCO 3 | 1.50kg | CaO | 0.84kg | 15 | c=0.075 |
| BaCO 3 | 7.89kg | BaO | 6.13kg | 40 | d=0.20 |
| TiO 2 | 17.74kg | TiO 2 | 17.74kg | 222 | m=1.11 |
The composition table of table 2 embodiment and test characteristic result
The monolithic ceramic capacitor electrical characteristic that table 3 test portion 2 and test portion 15 are made
Above-described embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only the specific embodiment of the present invention; the protection range be not intended to limit the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a low dielectric constant dielectric porcelain powder composition for firing, is characterized in that, described dielectric porcelain powder composition comprises 100 weight portions primarily of a mole MgO, b mole ZnO, c mole CaO, d mole BaO and m mole of TiO
2first composition of composition and 1.5 ~ 16 weight portions are primarily of BaO, SiO
2, ZnO, MnO and B
2o
3the glass frit of the second composition of composition; Wherein, m=TiO
2molal quantity/(MgO+ZnO+CaO+BaO) molal quantity, in above formula, ZnO is the ZnO of the first composition, and a+b+c+d=1, and 0.05≤a≤0.40,0.40≤b≤0.85,0.04≤c≤0.11,0.00≤d≤0.30,0.6≤m≤2.0; The content of each composition of the glass frit of described second composition is 10%≤BaO≤60%, 5%≤SiO
2≤ 30%, 5%≤ZnO≤30%, 0%≤MnO≤10%, 15%≤B
2o
3≤ 60%.
2. the low dielectric constant dielectric porcelain powder composition of firing as claimed in claim 1, it is characterized in that, each composition in described first composition is with BaCO
3, ZnO, Mg (OH)
2or MgCO
3, CaCO
3for initiation material, wet mixed 16 hours in ball milling, to pour out after oven dry with more than 1050 DEG C high-temperature calcinations 2 hours in kiln, calcining material is finely ground to less than 1.2 μm through coarse crushing again.
3. the low dielectric constant dielectric porcelain powder composition of firing as claimed in claim 1, it is characterized in that, after weighing, mixing, the oven dry to scale of each composition in the glass frit of described second composition, be finely ground to less than 1.5 μm through coarse crushing again in 1100 DEG C of melt water quenchings.
4. the temperature compensating type monolithic ceramic capacitor made of the low dielectric constant dielectric porcelain powder composition of a firing, it is characterized in that, described low dielectric constant dielectric porcelain powder composition is primarily of a mole MgO, b mole ZnO, c mole CaO, d mole BaO and m mole of TiO by 100 weight portions
2the glass frit of the first composition of composition and the second composition of 1.5 ~ 16 weight portions, described low dielectric constant dielectric porcelain powder composition adds organic binder bond again, Homogeneous phase mixing in ball mill, make castable porcelain to starch, making porcelain starch again to be uniformly coated on substrate after drying, republish inner electrode, so repeat to reach required ceramic structure for several times, through the monolithic ceramic capacitor of sintering; Wherein, m=TiO
2molal quantity/(MgO+ZnO+CaO+BaO) molal quantity, in above formula, ZnO is the ZnO of the first composition, and a+b+c+d=1, and 0.05≤a≤0.40,0.40≤b≤0.85,0.04≤c≤0.11,0.00≤d≤0.30,0.6≤m≤2.0; The glass frit of described second composition consist of 10%≤BaO≤60%, 5%≤SiO
2≤ 30%, 5%≤ZnO≤30%, 0%≤MnO≤10%, 15%≤B
2o
3≤ 60%.
5. the temperature compensating type monolithic ceramic capacitor made of the low dielectric constant dielectric porcelain powder composition of firing as claimed in claim 4, it is characterized in that, described organic binder bond is by polymethyl methacrylate, and butanone/alcohol solvent, butyl benzyl phthalate ester composition formed.
6. the temperature compensating type monolithic ceramic capacitor made of the low dielectric constant dielectric porcelain powder composition of firing as claimed in claim 4, it is characterized in that, the composition of described inner electrode is the inner electrode containing 90%Ag/10%Pd.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101146921 | 2012-12-12 | ||
| TW101146921A TW201422560A (en) | 2012-12-12 | 2012-12-12 | Ultra-low temperature fired low dielectric constant dielectric porcelain powder composition and temperature compensation type laminated ceramic capacitor made of the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103864413A CN103864413A (en) | 2014-06-18 |
| CN103864413B true CN103864413B (en) | 2015-06-17 |
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|---|---|
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| TW (1) | TW201422560A (en) |
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|---|---|---|---|---|
| CN106435503B (en) * | 2016-11-02 | 2019-02-05 | 清华大学 | A kind of silicon oxide film and its deposition method of big positive temperature coefficient |
| CN110922183B (en) * | 2019-11-13 | 2021-10-19 | 深圳顺络电子股份有限公司 | Preparation method of microwave dielectric sintered powder material, microwave dielectric ceramic and application thereof |
| CN114804858B (en) * | 2021-01-28 | 2023-07-04 | 山东国瓷功能材料股份有限公司 | Low-temperature co-fired ceramic material for filter and preparation method and application thereof |
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| CN1445800A (en) * | 2002-03-19 | 2003-10-01 | Tdk株式会社 | Ceramic powder and laminated ceramic electronic assembly |
| CN1581387A (en) * | 2003-08-08 | 2005-02-16 | 广东风华高新科技集团有限公司 | Multi-layer ceramic capacitor, and its preparing method and dielectric ceramic material used therefor |
| CN102617138A (en) * | 2012-03-28 | 2012-08-01 | 厦门松元电子有限公司 | BaO-TiO2 lead-free Y5U capacitor dielectric material and preparation method for same |
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| CN1445800A (en) * | 2002-03-19 | 2003-10-01 | Tdk株式会社 | Ceramic powder and laminated ceramic electronic assembly |
| CN1581387A (en) * | 2003-08-08 | 2005-02-16 | 广东风华高新科技集团有限公司 | Multi-layer ceramic capacitor, and its preparing method and dielectric ceramic material used therefor |
| CN102617138A (en) * | 2012-03-28 | 2012-08-01 | 厦门松元电子有限公司 | BaO-TiO2 lead-free Y5U capacitor dielectric material and preparation method for same |
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