CN103864413B - Dielectric ceramic powder composition and temperature compensation type laminated ceramic capacitor made of same - Google Patents
Dielectric ceramic powder composition and temperature compensation type laminated ceramic capacitor made of same Download PDFInfo
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- 239000000203 mixture Substances 0.000 title claims abstract description 37
- 239000000843 powder Substances 0.000 title claims abstract description 30
- 239000000919 ceramic Substances 0.000 title claims abstract description 21
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 12
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 238000010304 firing Methods 0.000 claims description 17
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 14
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 229910052573 porcelain Inorganic materials 0.000 claims description 12
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- IRIAEXORFWYRCZ-UHFFFAOYSA-N Butylbenzyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910019440 Mg(OH) Inorganic materials 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 3
- 238000005266 casting Methods 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 239000007858 starting material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 31
- 239000011787 zinc oxide Substances 0.000 description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 229910052793 cadmium Inorganic materials 0.000 description 7
- 229910052745 lead Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- VASIZKWUTCETSD-UHFFFAOYSA-N manganese(II) oxide Inorganic materials [Mn]=O VASIZKWUTCETSD-UHFFFAOYSA-N 0.000 description 1
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Abstract
Description
技术领域technical field
本发明涉及陶瓷电容器领域,特别涉及介电瓷粉组成物及其制成的温度补偿型积层陶瓷电容器。The invention relates to the field of ceramic capacitors, in particular to a dielectric ceramic powder composition and a temperature-compensating laminated ceramic capacitor made thereof.
背景技术Background technique
一般陶瓷电容器根据瓷粉组成的介电常数高低可分成三类:高介电常数型(Hi-K),中介电常数型(Mid-K)及温度补偿型(TC)。高介电常数型的介电常数达4000~15000,介电常数随温度的变化而变化很大。中介电常数型的介电常数约1400~3000,介电常数随温度的变化较小但常是非线性的变化。温度补偿型的介电常数约8~100,介电常数随温度的变化最小且常是线性的变化。Generally, ceramic capacitors can be divided into three categories according to the dielectric constant of the ceramic powder: high dielectric constant type (Hi-K), medium dielectric constant type (Mid-K) and temperature compensation type (TC). The dielectric constant of the high dielectric constant type reaches 4000-15000, and the dielectric constant changes greatly with the change of temperature. The dielectric constant of the medium-permittivity type is about 1400-3000, and the change of the dielectric constant with temperature is small but often nonlinear. The dielectric constant of the temperature compensation type is about 8 to 100, and the dielectric constant changes with temperature the least and often changes linearly.
积层陶瓷电容器的内电极和陶瓷介电层须一起共烧,因此,常见商品化的积层陶瓷电容器的瓷粉组成根据烧成温度可概分为高温烧成型与低温烧成型两种,高温烧成型的烧成温度约在1250℃~1300℃,因其烧成温度较高,故其内电极一般需采用熔点较高且价格昂贵的钯(Pd)系金属。低温烧成型由于烧成温度在1150℃以下,故其内电极可采用价格便宜且银含量较高的银钯合金金属(Ag/Pd)来降低成本而较经济。The internal electrode and the ceramic dielectric layer of the multilayer ceramic capacitor must be co-fired together. Therefore, the porcelain powder composition of the common commercialized multilayer ceramic capacitor can be divided into two types according to the firing temperature: high-temperature firing type and low-temperature firing type. The firing temperature of the high-temperature firing type is about 1250 ° C to 1300 ° C. Because of the high firing temperature, the internal electrodes generally need to use palladium (Pd) metals with high melting points and expensive prices. Low-temperature sintering type Since the sintering temperature is below 1150°C, the inner electrode can be made of cheap silver-palladium alloy metal (Ag/Pd) with high silver content to reduce costs and be more economical.
一般温度补偿型电容器瓷粉组成的介电常数虽约在8~100间,但现行技术在制造100pF以下的低电容值NP0积层陶瓷电容器时,若瓷粉的介电常数较高,则因积层层数较少,制作过程控制不易,陶瓷电容的电容值常偏离规格值以致良率偏低;若选用介电常数较低的瓷粉,则因积层层数较多,耗用银钯内电极较多,以致内电极材料成本提高,因此现行制造100pF以下的积层陶瓷电容器常选用介电常数为15~45的瓷粉来制造,以获得最合适地经济生产。Although the dielectric constant of the ceramic powder of the general temperature compensation capacitor is between 8 and 100, when the current technology manufactures low-capacitance NP0 multilayer ceramic capacitors below 100pF, if the dielectric constant of the ceramic powder is high, it will be due to The number of laminated layers is small, and the production process is not easy to control. The capacitance value of ceramic capacitors often deviates from the specification value and the yield rate is low; There are many palladium internal electrodes, which increases the cost of internal electrode materials. Therefore, the current manufacturing of multilayer ceramic capacitors below 100pF often uses ceramic powder with a dielectric constant of 15-45 to obtain the most suitable economical production.
一般低温烧成型介电瓷粉组成通常是用高温烧成的主成份再添加各种烧结助剂(Sintering aid),诸如玻璃(glass),玻璃熔块(frit)或助熔剂(flux)等以降低烧成温度,一般的玻璃或玻璃熔块皆含Pb或Cd或Bi等低熔点成份,而Pb、Cd是对环境生态有害物质。Generally, the composition of low-temperature firing type dielectric ceramic powder is usually the main component of high-temperature firing and then adding various sintering aids (Sintering aid), such as glass (glass), glass frit (frit) or flux (flux), etc. In order to reduce the firing temperature, general glass or glass frit contains low melting point components such as Pb, Cd or Bi, and Pb and Cd are harmful substances to the environment and ecology.
关于低温烧成温度补偿型陶瓷电容器组成物,美国发明专利第4,506,026号所揭示一种由主成份MgO-CaO-TiO2-Al2O3-SiO2-Nb2O5和副成份PbO-Bi2O3-CdO-ZnO-SiO2-B2O3玻璃及第5,599,757号所揭示一种由主成份BaO-TiO2-ZrO2-SiO2和副成份PbO-TiO2-ZrO2-Al2O3-LiF-SiO2-B2O3玻璃所构成的组成物,符合E.I.A的NP0规格要求,但其烧成温度都须在1100℃以上且瓷粉组成都含Pb或Cd之对环境有害物质。因此烧成温度为1000℃以下,及以MgO-ZnO-CaO-BaO-TiO2为主成份添加BaO-SiO2-ZnO-MnO-B2O3熔块副成份之不含Pb、Cd、Bi之积层陶瓷电容器瓷粉组成尚未出现。Regarding the composition of low-temperature firing temperature-compensated ceramic capacitors, U.S. Patent No. 4,506,026 discloses a composition consisting of the main component MgO-CaO-TiO 2 -Al 2 O 3 -SiO 2 -Nb 2 O 5 and the secondary component PbO-Bi 2 O 3 -CdO-ZnO-SiO 2 -B 2 O 3 glass and No. 5,599,757 discloses a glass composed of main component BaO-TiO 2 -ZrO 2 -SiO 2 and auxiliary component PbO-TiO 2 -ZrO 2 -Al 2 The composition composed of O 3 -LiF-SiO 2 -B 2 O 3 glass meets the NP0 specification requirements of EIA, but the firing temperature must be above 1100°C and the composition of the porcelain powder contains Pb or Cd, which is harmful to the environment substance. Therefore, the firing temperature is below 1000°C, and the main component is MgO-ZnO-CaO-BaO-TiO 2 , and the auxiliary component of BaO-SiO 2 -ZnO-MnO-B 2 O 3 frit is added without Pb, Cd, Bi The powder composition of MLCCs has not yet appeared.
因应环保潮流,开发出不含Pb、Cd的介电瓷粉组成有其必要性。In response to the trend of environmental protection, it is necessary to develop a composition of dielectric ceramic powder that does not contain Pb and Cd.
发明内容Contents of the invention
本发明选用适当地主成份系统,添加不含Pb、Cd的烧结助剂将烧结温度降低至1000℃以下,从而可选用较70%Ag/30%Pd更价廉的90%Ag/10%Pd的内电极来降低成本制造更经济的积层陶瓷电容器。The present invention selects an appropriate main component system, adds sintering aids that do not contain Pb and Cd to reduce the sintering temperature to below 1000°C, so that 90% Ag/10% Pd, which is cheaper than 70% Ag/30% Pd, can be used. Internal electrodes to reduce costs to manufacture more economical MLCCs.
本发明的目的即在开发一种能在烧结温度为1000℃烧成积层陶瓷电容器的介电瓷粉组成,且不含铅、镉、铋等成份,且其电气特性的介电常数可达25~40,Q值为1000以上,温度系数符合E.I.A.的NP0规格,即0±30ppm/℃以内,该介电瓷粉组成适合于供制造温度补偿型积层陶瓷电容器使用。The purpose of the present invention is to develop a kind of dielectric porcelain powder composition that can be fired into laminated ceramic capacitors at a sintering temperature of 1000 ° C, and does not contain components such as lead, cadmium, bismuth, and the dielectric constant of its electrical properties can reach 25~40, Q value above 1000, temperature coefficient conforms to E.I.A. NP0 specification, that is, within 0±30ppm/℃, the composition of the dielectric ceramic powder is suitable for the manufacture of temperature-compensated multilayer ceramic capacitors.
为达上述的目的,本发明提出超低温烧成低介电常数的积层陶瓷电容器的介电瓷粉组成,由100重量份的具有各摩尔数比为0.05≤MgO≤0.40,0.40≤ZnO≤0.85,0.04≤CaO≤0.11,0.00≤BaO≤0.30,0.6≤TiO2≤2.0,与1.5~16重量份由BaO、SiO2、ZnO、MnO和B2O3所组成的第二成份的玻璃熔块(frit),其中,玻璃熔块(frit)的组成为10%≤BaO≤60%,5%≤SiO2≤30%,5%≤ZnO≤30%,0%≤MnO≤10%,15%≤B2O3≤60%。In order to achieve the above-mentioned purpose, the present invention proposes the composition of the dielectric ceramic powder of the laminated ceramic capacitor of ultra-low temperature firing and low dielectric constant, which is composed of 100 parts by weight of molar ratios of 0.05≤MgO≤0.40, 0.40≤ZnO≤0.85 , 0.04≤CaO≤0.11, 0.00≤BaO≤0.30, 0.6≤TiO 2 ≤2.0, and 1.5-16 parts by weight of glass frit of the second component composed of BaO, SiO 2 , ZnO, MnO and B 2 O 3 (frit), wherein the composition of glass frit (frit) is 10% ≤ BaO ≤ 60%, 5% ≤ SiO 2 ≤ 30%, 5% ≤ ZnO ≤ 30%, 0% ≤ MnO ≤ 10%, 15% ≤B 2 O 3 ≤60%.
根据以上的组成范围,是以MgTiO3,ZnTiO3,CaTiO3,BaTi4O9,Ba2Ti9O20等为主成份添加frit来共同作用降低烧结温度至1000℃以下,并提高烧结体致密性。控制不同的MgTiO3,ZnTiO3,CaTiO3,BaTi4O9,Ba2Ti9O20的含量比例,可调整介电常数及电容值温度系数;添加玻璃熔块可提高烧结密度,提升绝缘电阻。According to the above composition range, MgTiO 3 , ZnTiO 3 , CaTiO 3 , BaTi 4 O 9 , Ba 2 Ti 9 O 20 etc. are the main components and frit is added to lower the sintering temperature below 1000°C and increase the density of the sintered body. sex. Controlling the content ratio of different MgTiO 3 , ZnTiO 3 , CaTiO 3 , BaTi 4 O 9 , Ba 2 Ti 9 O 20 can adjust the dielectric constant and capacitance temperature coefficient; adding glass frit can increase the sintering density and insulation resistance .
为进一步揭示本案的技术内容,请参阅以下的实施例:For further disclosure of the technical content of this case, please refer to the following examples:
具体实施方式Detailed ways
下面对本发明实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention are clearly and completely described below. Apparently, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
以BaCO3(碳酸钡),ZnO(氧化锌),Mg(OH)2(氢氧化镁)或MgCO3(碳酸镁),CaCO3(碳酸钙),TiO2(氧化钛)为起始原料,依表1中所示的组成比例秤重,在球磨中湿式混合16小时,倒出烘干后在窑炉中以1050℃以上高温煅烧2小时,煅烧料再经粗碎细磨至1.0μm以下作为本发明中的第一成份。Starting from BaCO 3 (barium carbonate), ZnO (zinc oxide), Mg(OH) 2 (magnesium hydroxide) or MgCO 3 (magnesium carbonate), CaCO 3 (calcium carbonate), TiO 2 (titanium oxide), Weigh according to the composition ratio shown in Table 1, wet mix in a ball mill for 16 hours, pour out and dry, and then calcinate in a kiln at a high temperature above 1050°C for 2 hours, and the calcined material is coarsely crushed and finely ground to below 1.0 μm As the first ingredient in the present invention.
第二成份的玻璃熔块(frit)则以氧化锌(ZnO)、碳酸钡(BaCO3)、碳酸锰(MnCO3)、硼酸(H3BO3)、氧化硅(SiO2)为起始原料,并按照10%≤BaO≤60%,5%≤SiO2≤30%,5%≤ZnO≤30%,0%≤MnO≤10%,15%≤B2O3≤60%的总和100%的配方组成,根据比例秤量、混合、烘干后,在1100℃熔融水淬再经粗碎细磨至1.5μm以下。The second component of glass frit (frit) uses zinc oxide (ZnO), barium carbonate (BaCO 3 ), manganese carbonate (MnCO 3 ), boric acid (H 3 BO 3 ), silicon oxide (SiO 2 ) as starting materials , and according to the sum of 10% ≤ BaO ≤ 60%, 5% ≤ SiO 2 ≤ 30%, 5% ≤ ZnO ≤ 30%, 0% ≤ MnO ≤ 10%, 15% ≤ B 2 O 3 ≤ 60% 100% According to the proportion of weighing, mixing and drying, it is quenched in molten water at 1100°C and then coarsely crushed and finely ground to less than 1.5μm.
再根据表2的重量比例,秤量第一成份及第二成份,并在球磨中湿式混合16小时,烘干后即得最终配方粉。此配方粉中再添加入20%含有10%聚乙烯醇(polyvinyl alcohol,即PVA)溶液,予以造粒后,以1.5Ton/cm2的压力来压制成直径10mm,厚0.5mm的圆板形生胚片,在1000℃左右的温度下烧结2小时。烧结体两面烧附电极后,依照下列的测试条件来测定其电性及烧结密度:即频率1MHz,测试电压1Vrms,测定电容值并计算介电常数ε及量测D.F.值(即散逸因素tanδ);以直流电压500V,充电1分钟,温度25℃,测定电阻值;以25℃的电容值为基准,测定-55℃到125℃时的电容温度变化系数;测量烧结体重量及体积来计算出烧结体密度,并由光学显微镜(OM)来观察烧结体显微结构,由这些数据来综合分析组成是否合乎要求。According to the weight ratio in Table 2, the first component and the second component were weighed, wet-mixed in a ball mill for 16 hours, and dried to obtain the final formula powder. Add 20% solution containing 10% polyvinyl alcohol (PVA) to this formula powder, granulate it, and press it into a disc shape with a diameter of 10mm and a thickness of 0.5mm at a pressure of 1.5Ton/ cm2 The green sheet is sintered at a temperature of about 1000°C for 2 hours. After the electrodes are fired on both sides of the sintered body, its electrical properties and sintered density are measured according to the following test conditions: frequency 1MHz, test voltage 1Vrms, capacitance value and calculation of dielectric constant ε and measurement of DF value (ie dissipation factor tanδ) ; With a DC voltage of 500V, charging for 1 minute, and a temperature of 25°C, measure the resistance value; take the capacitance value at 25°C as the benchmark, measure the capacitance temperature variation coefficient from -55°C to 125°C; measure the weight and volume of the sintered body to calculate The density of the sintered body, and the microstructure of the sintered body is observed by an optical microscope (OM), and these data are used to comprehensively analyze whether the composition meets the requirements.
上述的试料配方可再进一步制成积层陶瓷电容器,其方法如下:对配方粉100重量份,添加由聚甲基丙烯酸甲酯10份,丁酮/乙醇溶剂30份,丁基苄基酞酸酯4份等成份所组成的有机粘结剂,置在球磨机中均匀混合16小时,制成浇注成形用瓷浆,再将瓷浆放入涂布机,使瓷浆均匀涂布在基板上,每次涂布的介电层膜厚约20μm~30μm,经80℃烘干后,再印刷内电极材料成份为90%Ag/10%Pd的内电极层,如此重复数次达到所需的厚度及层数后,再将此成形体切割成4.0L×2.0Wmm大小的生胚芯片,此生胚芯片先经低于500℃脱脂处理80小时后,在960℃~1000℃温度下烧结3小时,烧结后的芯片大小约为3.2L×1.6Wmm,再经外电极烧附后,依照下列测试条件:频率1MHz,测试电压1Vrms,测定D.F值及电容值并计算其介电常数ε值;以直流电压50V,充电1分钟后,测定绝缘电阻值;以每秒100V的速率升高直流电压,测定其破坏电压;以25℃的电容值为基准,测定-55℃到125℃时的电容温度变化系数来完整评估积层陶瓷电容器的电气特性。本实施例结果如表3所示。The above-mentioned sample formula can be further made into a multilayer ceramic capacitor, and its method is as follows: to 100 parts by weight of the formula powder, add 10 parts of polymethyl methacrylate, 30 parts of methyl ethyl ketone/ethanol solvent, butyl benzyl phthalate The organic binder composed of 4 parts of acid ester, etc., is placed in a ball mill and mixed evenly for 16 hours to make a porcelain slurry for casting molding, and then put the porcelain slurry into the coating machine to make the porcelain slurry evenly coated on the substrate The thickness of the dielectric layer coated each time is about 20 μm to 30 μm. After drying at 80 ° C, the internal electrode layer with the internal electrode material composition of 90% Ag/10% Pd is printed, and this is repeated several times to achieve the required After the thickness and the number of layers, the formed body is cut into green chips with a size of 4.0L×2.0Wmm. The green chips are degreased at a temperature lower than 500°C for 80 hours, and then sintered at a temperature of 960°C to 1000°C for 3 hours. , the size of the sintered chip is about 3.2L×1.6Wmm, and after the external electrode is fired, according to the following test conditions: frequency 1MHz, test voltage 1Vrms, measure D.F value and capacitance value and calculate its dielectric constant ε value; DC voltage 50V, after charging for 1 minute, measure the insulation resistance value; increase the DC voltage at a rate of 100V per second, and measure its breakdown voltage; take the capacitance value at 25 °C as the reference, measure the capacitance temperature from -55 °C to 125 °C coefficient of variation to fully evaluate the electrical characteristics of MLCCs. The results of this example are shown in Table 3.
本发明是以介电常数25~40,电容温度系数符合NP0规格(即-55℃~125℃,0±30ppm),D.F值(即散逸因子tanδ)为0.001以下,绝缘电阻在1×1011Ω以上,烧结密度达4.25g/cm3以上为目标。表2的试料中除试料1、试料7、试料8、试料12、试料14、试料16、试料17、试料19、试料21、试料22以及试料26无法符合本发明的目标外,其余试料均可符合目标,故以下就请求范围的理由分述如下:In the present invention, the dielectric constant is 25-40, the capacitance temperature coefficient conforms to the NP0 specification (that is, -55°C to 125°C, 0±30ppm), the D.F value (that is, the dissipation factor tanδ) is below 0.001, and the insulation resistance is above 1×1011Ω , The sintered density is above 4.25g/cm3 as the goal. Sample 1, Sample 7, Sample 8, Sample 12, Sample 14, Sample 16, Sample 17, Sample 19, Sample 21, Sample 22, and Sample 26 are excluded from the samples in Table 2. Except that the object of the present invention cannot be met, all the other samples can meet the object, so the reasons for the scope of the claim are as follows:
由试料1所示,当frit=1重量份时,D.F值太高且烧结密度皆较目标值为低,由试料7所示,当frit=20重量份时,烧结产生黏片现象以致无法量测电性,表示玻璃熔块过量,而frit=2~16重量份时,均可符合目标值,因此,frit最适添加量范围为1.5%≤frit≤16.0%。As shown in sample 1, when frit=1 weight part, the D.F value is too high and the sintered density is lower than the target value. As shown in sample 7, when frit=20 weight part, sintering produces sticking phenomenon so that The electrical property cannot be measured, which means that there is too much glass frit, and when frit=2~16 parts by weight, the target value can be met. Therefore, the optimum adding amount of frit is 1.5%≤frit≤16.0%.
试料8~试料26主要是在调整第一成份的MgO,ZnO,CaO,BaO以及TiO2的比率,以寻求最佳范围,在此范围中试料均可符合目标的电气特性、烧结密度和显微镜结构。Samples 8 to 26 are mainly to adjust the ratio of MgO, ZnO, CaO, BaO and TiO 2 in the first component to find the best range. In this range, the samples can meet the target electrical characteristics and sintered density and microscope structures.
由试料8及试料12所示,当MgO=0m/o时有D.F值太高,不符合NPO特性要求。或当MgO=50m/o时,烧结不佳致烧结密度差且IR不佳及D.F不良,当MgO=5m/o~40m/o时,各项性质皆满足目标值,故MgO的最适范围为5m/o≤MgO≤40m/o。As shown by sample 8 and sample 12, when MgO=0m/o, the D.F value is too high, which does not meet the requirements of NPO characteristics. Or when MgO=50m/o, poor sintering results in poor sintered density, poor IR and poor D.F. When MgO=5m/o~40m/o, all properties meet the target value, so the optimum range of MgO 5m/o≤MgO≤40m/o.
由试料14及试料16所示,当ZnO=32.5m/o时,D.F值偏离目标值,当ZnO=87.5m/o时,D.F值也偏离目标值,当ZnO=42.5m/o~82.5m/o时,各项性质皆满足目标值,故ZnO的最适范围为40m/o≤ZnO≤85m/o。As shown by sample 14 and sample 16, when ZnO=32.5m/o, the D.F value deviates from the target value, when ZnO=87.5m/o, the D.F value also deviates from the target value, when ZnO=42.5m/o~ At 82.5m/o, all properties meet the target value, so the optimum range of ZnO is 40m/o≤ZnO≤85m/o.
由试料17及试料19所示,当CaO=3.7m/o时,温度系数偏离目标值,当CaO=11.2m/o时,温度系数也偏离目标值,当CaO=5.2m/o~9.5m/o时,各项性质皆满足目标值,故CaO的最适范围为4m/o≤CaO≤11m/o。As shown by sample 17 and sample 19, when CaO=3.7m/o, the temperature coefficient deviates from the target value, when CaO=11.2m/o, the temperature coefficient also deviates from the target value, when CaO=5.2m/o~ At 9.5m/o, all properties meet the target value, so the optimum range of CaO is 4m/o≤CaO≤11m/o.
由试料21所示,当BaO=40m/o时,有D.F值太高不符合NPO特性要求的现象,当BaO=0m/o~30m/o时,各项性质皆满足目标值,故BaO的最适范围为0m/o≤BaO≤30m/o。As shown in sample 21, when BaO=40m/o, there is a phenomenon that the D.F value is too high to meet the requirements of NPO characteristics. When BaO=0m/o~30m/o, all properties meet the target value, so BaO The optimum range is 0m/o≤BaO≤30m/o.
由试料22及试料26所示,当m=TiO2摩尔数/(MgO+ZnO+CaO+BaO)摩尔数=0.59时,D.F值太高超出目标值,当m=2.50时,有温度系数远远偏离目标值的现象,当m=0.67~2.00时,各项性质皆满足目标值,故m的最适范围为0.60≤m≤2.00。As shown by samples 22 and 26, when m=TiO 2 moles/(MgO+ZnO+CaO+BaO) moles=0.59, the DF value is too high and exceeds the target value; when m=2.50, there is a temperature The phenomenon that the coefficient deviates far from the target value, when m=0.67~2.00, all properties meet the target value, so the optimum range of m is 0.60≤m≤2.00.
表1试料10的第一成份配料比例The first component batching ratio of table 1 sample 10
表2实施例之成份表及测试特性结果The composition list and test characteristic result of table 2 embodiment
表3试料2及试料15制成之积层陶瓷电容器电气特性Table 3 Electrical Characteristics of Multilayer Ceramic Capacitors Made of Sample 2 and Sample 15
以上所述的具体实施方式,对本发明的目的、技术方案和有益效果进行了进一步详细说明,所应理解的是,以上所述仅为本发明的具体实施方式而已,并不用于限定本发明的保护范围,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the scope of the present invention. Protection scope, within the spirit and principles of the present invention, any modification, equivalent replacement, improvement, etc., shall be included in the protection scope of the present invention.
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