CN103855263A - GaN-base LED epitaxial wafer with polarization tunnel junction and preparation method of GaN-base LED epitaxial wafer - Google Patents
GaN-base LED epitaxial wafer with polarization tunnel junction and preparation method of GaN-base LED epitaxial wafer Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 135
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 95
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 claims description 29
- 229910052738 indium Inorganic materials 0.000 claims description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 20
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 4
- 229910003465 moissanite Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 8
- -1 indium-aluminum-nitrogen Chemical compound 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 230000005641 tunneling Effects 0.000 abstract 1
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
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Abstract
The invention provides a GaN-base LED epitaxial wafer with a polarization tunnel junction and a preparation method of the GaN-base LED epitaxial wafer. The GaN-base LED epitaxial wafer is composed of a substrate, a low temperature buffer layer, a non-doping GaN layer, an n-type GaN layer, a quantum well layer, a p-type algan layer, a p-type GaN layer, a highly doped p-type GaN layer and a highly doped n-type GaN layer. The GaN-base LED epitaxial wafer is characterized in that a non-doping indium-aluminum-nitrogen layer is arranged between the highly doped p-type GaN layer and the highly doped n-type GaN layer. All the layers are sequentially grown through an MOCVD epitaxial device. The highly doped p-type GaN layer, the non-doping indium-aluminum-nitrogen layer and the highly doped n-type GaN layer jointly form the polarization tunnel junction to replace a current expanding layer on the p-type GaN layer of the epitaxial wafer. The polarization tunnel junction has a higher polarization electric field compared with an ordinary tunnel junction under drive of currents, the tunneling probability and the transverse conductivity of carriers can be remarkably increased, pressure drop can be reduced and transverse current expanding of light emitting diodes can be enhanced, and the high-lighting-efficiency light emitting diodes can be acquired.
Description
Technical field
The invention belongs to semiconductor photoelectronic device field, relate in particular to a kind of GaN base LED epitaxial wafer with polarization tunnel junction and preparation method thereof.
Background technology
High brightness LED (LED) is as a kind of efficient, environmental protection, green New Solid lighting source, because it has, volume is little, lightweight, the life-span is long, reliability is high and use the advantages such as voltage is low and low in energy consumption, be applied widely rapidly, become the best light source selection that substitutes traditional lighting light source.
GaN, InN and AlN are direct gap semiconductor materials, and its room temperature energy gap is respectively 3.4eV, 0.6eV and 6.1eV.GaN and solid solution thereof can be used for manufacturing the photoelectric device from visible ray to ultraviolet band, such as blue light-emitting diode, laser and photodetector etc.GaN based high-brightness light-emitting diode (LED) is forward position and the focus of current global optoelectronic areas research and industry.GaN base LED preparation will be through the growth of LED epitaxial wafer, LED chip preparation and three key links of LED encapsulation.Wherein the growth of LED epitaxial wafer is the core technology of LED, and it plays a major role to the performance level of LED.
The structure of GaN base LED epitaxial wafer normally by p-type gallium nitride layer and N-shaped gallium nitride layer and the active area between this is two-layer (for example, quantum well) composition, but due to the reason such as Mg impurity activation difficulty and work function higher (approximately 7.5eV) of p-type GaN, cause p-type gallium nitride layer to there is stronger opposing current capacity compared with N-shaped gallium nitride layer,, electric conductivity is low, this shortcoming can cause electric current can hinder whole lateral current in the time that electrode enters p-type gallium nitride layer, thereby causes Nonuniform Currents to be injected with source region and reduce the efficiency of whole device.
At present, a kind of method that solves current expansion problem is depositing metal layers on p-type gallium nitride layer, for example Ni-Au, and such device has good current expansion performance.In order to meet the requirement of positive bright dipping, Ni-Au electrode must do very thinly, and its visible light transmissivity is approximately 65%, and still, for realizing the even expansion of electric current, the Ni-Au utmost point requires relatively thick, and both are conflicting.Because this layer has lower transmitance and can absorb the light of coming through p-type gallium nitride layer from active area, all can reduce the luminous efficiency of device.Some plated metal layer material can not be attached to the surface of p-type gallium nitride layer effectively, so also can make the device photoelectric performance of LED further decline.
P-type gallium nitride layer is also far short of what is expected with respect to N-shaped gallium nitride layer reliability, often can damage the p-type gallium nitride layer that is exposed to top layer because of steps such as the processing of device, thereby affect the luminous efficiency of LED device.
The another kind of method that solves current expansion problem is on p-type gallium nitride layer, to manufacture tunnel junction again, the method people such as Seong-Ran Jeon at (" Applied Physics wall bulletin ", the 78th volume, the 21st phase, 3265-3267 page) describe in " utilizing the lateral current spreading in the GaN substrate LED of tunnel contact knot " literary composition of delivering.When Jeon utilizes MOCVD epitaxial device to manufacture GaN base LED epitaxial wafer, on p-type gallium nitride layer, grow the successively again highly doped p-type gallium nitride layer of 10nm and the highly doped N-shaped gallium nitride layer of 10nm, and do again electrode using N-shaped gallium nitride layer as top layer.The structure of even now can be improved the current expansion performance of LED chip, but such tunnel junction is all to be become to be grouped into by GaN, belongs to homojunction, there is no polarization and the polarized electric field of generation, tunnel probability for tunnel junction has certain influence, and can improve the operating voltage of whole LED device.
Summary of the invention
The present invention is directed to p-type layer in current manufacture LED device and be difficult to obtain the lower defect such as contact resistance and current expansion performance, improve LED device efficiency, a kind of GaN base LED epitaxial wafer with polarization tunnel junction is provided.
Another object of the present invention is the preparation method described in a kind of with the GaN base LED epitaxial wafer of polarization tunnel junction.
This GaN base LED epitaxial wafer with polarization tunnel junction is made up of substrate 1, low temperature buffer layer 2, non-doped gallium nitride layer 3, N-shaped gallium nitride layer 4, quantum well layer 5, p-type gallium aluminium nitrogen layer 6, p-type gallium nitride layer 7, highly doped p-type gallium nitride layer 8 and highly doped N-shaped gallium nitride layer 10, between highly doped p-type gallium nitride layer 8 and highly doped N-shaped gallium nitride layer 10, there is the indium aluminium nitrogen layer 9 of a non-doping, the indium aluminium nitrogen layer 9 of highly doped p-type gallium nitride layer 8, non-doping and polarization tunnel junction of the common composition of highly doped N-shaped gallium nitride layer 10, the thickness of polarization tunnel junction is less than 20nm.Compared with the prepared LED structure with tunnel junction of Jeon, there is the indium aluminium nitrogen layer 9 of the non-doping of one deck centre, the raw polarized electric field of energy fecund like this, electric field strength when device is subject to current drives is just made up of external electrical field, internal electric field, polarized electric field three parts, the increase of total electric field intensity can improve the tunnel probability of tunnel junction, thereby the inhibition while reducing electric current injection, reduce the operating voltage of LED device, improve horizontal conductivity, thereby improve current expansion performance, can there is more charge carrier evenly compound in active area, improve the luminous efficiency of LED.
Adopt the non-doped indium aluminium nitrogen layer 9 of growing on highly doped p-type gallium nitride layer 8, the more highly doped N-shaped gallium nitride layer 10 of continued growth, can reduce defect, improve the crystal mass of epitaxial wafer.Research shows, the mass content of the In in the indium aluminium nitrogen alloy-layer in the middle of polarization tunnel junction is adjustable between 10 ~ 40%.In preferred indium aluminium nitrogen layer, In mass content is 14 ~ 22%, and the lattice mismatch of this content and GaN is less than 0.5%, and character is better than InGaN.
This GaN base LED epitaxial wafer with polarization tunnel junction, its substrate 1 is sapphire, silicon or SiC.
The flow process of carrying out the GaN base LED epitaxial wafer described in epitaxial growth with polarization tunnel junction by MOCVD epitaxial device is as follows: first at Grown low temperature buffer layer 2, can be GaN, AlN, InN or and alloy material, growth temperature is at 500 ~ 600 ℃, and thickness is 10 ~ 100nm; Then the non-doped gallium nitride layer 3 of growing, object is to improve crystal mass, and growth temperature is at 950 ~ 1250 ℃, and thickness is 0.1 ~ 10 μ m; Then growing n-type gallium nitride layer 4, growth temperature is at 950 ~ 1250 ℃, and thickness is 0.4 ~ 10 μ m; Regrowth quantum well layer 5, the material of quantum well is single or multiple InGaN/GaN cycles, its growth temperature is at 500 ~ 1000 ℃; Regrowth p-type gallium aluminium nitrogen layer 6 on quantum well layer 5, growth temperature is at 900 ~ 1000 ℃, thickness 10 ~ 200nm; Regrowth p-type gallium nitride layer 7, growth temperature is at 900 ~ 1000 ℃, thickness 50 ~ 300nm; Finally on p-type gallium nitride layer 7, growth has the indium aluminium nitrogen layer 9 of highly doped p-type gallium nitride layer 8, non-doping, highly doped N-shaped gallium nitride layer 10 successively.This thickness of three layers is all less than 20nm, and growth temperature is at 900 ~ 1000 ℃.Form polarization tunnel junction by highly doped p-type gallium nitride layer 8, non-doped indium aluminium nitrogen layer 9 and highly doped N-shaped gallium nitride layer 10.According to manufacturing requirement, general just using this tunnel junction that polarizes as cover layer, but sometimes also can be as required can regrowth one deck 0.1 ~ 5 μ m at highly doped N-shaped gallium nitride layer N-shaped gallium nitride layer 4.
The acceptor of above-mentioned all p-type layers is Mg or Zn, and the alms giver of N-shaped layer is Si.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is described in further detail.
Fig. 1 is the GaN base LED epitaxial wafer structural representation with polarization tunnel junction of embodiment 1.
Fig. 2 is the GaN base LED formal dress structural representation with polarization tunnel junction of embodiment 1.
Fig. 3 is the GaN base LED inverted structure schematic diagram with polarization tunnel junction of embodiment 1.
Fig. 4 is the GaN base LED vertical stratification schematic diagram with polarization tunnel junction of embodiment 1.
Fig. 5 is the inversion growth structure GaN base LED epitaxial wafer with polarization tunnel junction of embodiment 2.
In figure: 1. substrate; 2. resilient coating; 3. non-doped gallium nitride layer; 4.n type gallium nitride layer; 5. quantum well layer; 6.p type gallium aluminium nitrogen layer; 7.p type gallium nitride layer; 8. highly doped p-type gallium nitride layer; 9. the indium aluminium nitrogen layer of non-doping; 10. highly doped N-shaped gallium nitride layer; 11. electrodes.
Embodiment
Consult shown in Fig. 1 to Fig. 4, the preferred embodiment of a kind of GaN base LED epitaxial wafer with polarization tunnel junction of the present invention, but embodiments of the present invention are not limited to this.
As shown in Figure 1, a GaN base LED epitaxial wafer with polarization tunnel junction, is made up of indium aluminium nitrogen layer 9 and the highly doped N-shaped gallium nitride layer 10 of substrate 1, resilient coating 2, non-doped gallium nitride layer 3, N-shaped gallium nitride layer 4, quantum well layer 5, p-type gallium aluminium nitrogen layer 6, p-type gallium nitride layer 7, highly doped p-type gallium nitride layer 8, non-doping.
By MOCVD epitaxial device, said structure is grown:
At H
2in environment, temperature is controlled under 1050 ℃ of conditions, carries out preliminary treatment in 10 minutes, and substrate 1 is carried out to high temperature purification;
The non-doped gallium nitride layer 3 of continued growth again, growth temperature is 1000 ℃, thickness is 2 μ m;
Growing n-type gallium nitride layer 4 in non-doped gallium nitride layer 3, growth temperature is 1000 ℃, thickness is 1 μ m;
Grown quantum trap layer 5 on N-shaped gallium nitride layer 4, the material of quantum well layer is InGaN/GaN periodic structure, and intercycle number is 10, and wherein the thickness of InGaN is 3nm, and the thickness of GaN is 10nm, and growth temperature is 700 ℃;
Be warming up to again 1050 ℃, the p-type gallium aluminium nitrogen layer 6 that the 50nm that grows is thick on quantum well layer 5;
Be cooled to 1000 ℃, the thick p-type gallium nitride layer 7 of 100nm of growing on p-type gallium aluminium nitrogen layer 6;
Keep under 1000 ℃ of temperature-resistant conditions, then 10 3 layers of the indium aluminium nitrogen layers 9 of successively grow highly doped p-type gallium nitride layer 8, non-doping, highly doped N-shaped gallium nitride layer, the thickness of every layer is 5nm;
Adopting LED chip technique to make the polarization tunnel junction LED of three kinds of different structures, is respectively the positive assembling structure of GaN base LED with polarization tunnel junction, as shown in Figure 2; There is the GaN base LED inverted structure of polarization tunnel junction, as shown in Figure 3; There is the GaN base LED vertical stratification of polarization tunnel junction, as shown in Figure 4.
The inversion growth structure GaN base LED epitaxial wafer of a kind of tunnel junction that polarizes as shown in Figure 5, the preparation method of employing MOCVD epitaxial device and the thickness of each layer are all identical with embodiment 1.
Its structure is the indium aluminium nitrogen layer 9 of substrate 1, low temperature buffer layer 2, non-doped gallium nitride layer 3, N-shaped gallium nitride layer 4, highly doped N-shaped gallium nitride layer 10, non-doping, highly doped p-type gallium nitride layer 8, p-type gallium nitride layer 7, quantum well layer 5, N-shaped gallium nitride layer 4 successively.
By MOCVD epitaxial device, the LED structure shown in Fig. 5 is grown:
At H
2in environment, temperature is controlled under 1050 ℃ of conditions, carries out preliminary treatment in 10 minutes, and substrate 1 is carried out to high temperature purification;
The non-doped gallium nitride layer 3 of continued growth again, growth temperature is 1000 ℃, thickness is 2 μ m;
Growing n-type gallium nitride layer 4 in non-doped gallium nitride layer 3, growth temperature is 1000 ℃, thickness is 1 μ m;
Keep under 1000 ℃ of temperature-resistant conditions, then 8 three layers of the indium aluminium nitrogen layers 9 of grow successively on N-shaped gallium nitride layer 4 highly doped N-shaped gallium nitride layer 10, non-doping, highly doped p-type gallium nitride layer, the thickness of every layer is 5nm, forms polarization tunnel junction by these three layers;
Continue to keep under 1000 ℃ of temperature-resistant conditions, the thicker p-type gallium nitride layer 7 of 100nm of growing on this polarization tunnel junction;
Then be cooled to 700 ℃, grown quantum trap layer 5 on p-type gallium nitride layer 7, the material of quantum well layer is InGaN/GaN periodic structure, and intercycle number is 10, and wherein the thickness of InGaN is 3nm, and the thickness of GaN is 10nm;
Be warming up to again 1000 ℃, the N-shaped gallium nitride layer 4 of the 500nm that grows on quantum well layer 5;
Finally adopt LED chip technology, electrode evaporation 11 all on upper and lower two N-shaped gallium nitride layers 4.
This structure and the embodiment 1 difference inverted LED epitaxial slice structure that is to grow, growing p-type layer first on substrate, the active area luminescent layer of then growing, regrowth N-shaped layer, as cap layer, so just can form good electrode contact and current expansion performance.Between substrate and p-type layer, adopt polarization tunnel junction to connect, form this polarization tunnel junction by indium aluminium nitrogen layer 9 and the highly doped p-type gallium nitride layer 8 of highly doped N-shaped gallium nitride layer 10, non-doping.
Claims (7)
1. one kind has the GaN base LED epitaxial wafer of polarization tunnel junction, its structure is by substrate (1), low temperature buffer layer (2), non-doped gallium nitride layer (3), N-shaped gallium nitride layer (4), quantum well layer (5), p-type gallium aluminium nitrogen layer (6), p-type gallium nitride layer (7), highly doped p-type gallium nitride layer (8) and highly doped N-shaped gallium nitride layer (10) composition, it is characterized in that having the indium aluminium nitrogen layer (9) of a non-doping between highly doped p-type gallium nitride layer (8) and highly doped N-shaped gallium nitride layer (10), highly doped p-type gallium nitride layer (8), the indium aluminium nitrogen layer (9) of non-doping and highly doped N-shaped gallium nitride layer (10) form a polarization tunnel junction jointly, the thickness of polarization tunnel junction is less than 20nm.
2. a kind of GaN base LED epitaxial wafer with polarization tunnel junction according to claim 1, the mass content of the In in the indium aluminium nitrogen layer (9) in the middle of the tunnel junction that it is characterized in that polarizing is 10 ~ 40%.
3. a kind of GaN base LED epitaxial wafer with polarization tunnel junction according to claim 1 and 2, the mass content of the In in the indium aluminium nitrogen layer (9) in the middle of the tunnel junction that it is characterized in that polarizing is 14 ~ 22%.
4. a kind of GaN base LED epitaxial wafer with polarization tunnel junction according to claim 1, is characterized in that substrate (1) is sapphire, silicon or SiC.
5. a kind of GaN base LED epitaxial wafer with polarization tunnel junction according to claim 1, is characterized in that quantum well layer (5) is made up of single quantum well or Multiple Quantum Well, and the number of cycles of Multiple Quantum Well inside is less than 60.
6. the preparation method of a kind of GaN base LED epitaxial wafer with polarization tunnel junction claimed in claim 1, is to carry out epitaxial growth by MOCVD equipment, it is characterized in that step is as follows:
1) adopt MOCVD equipment low temperature growth buffer layer (2) first on substrate (1), 500 ~ 600 ℃ of growth temperatures, thickness is 10 ~ 100nm;
2) in low temperature buffer layer (2) the non-doped gallium nitride layer of upper growth (3), 950 ~ 1250 ℃ of growth temperatures, thickness is 0.1 ~ 10 μ m;
3) at the upper growing n-type gallium nitride layer (4) of non-doped gallium nitride layer (3), 950 ~ 1250 ℃ of growth temperatures, thickness is 0.4 ~ 10 μ m;
4) at the upper grown quantum trap layer (5) of N-shaped gallium nitride layer (4), the material of quantum well is single or multiple InGaN/GaN cycles, 500 ~ 1000 ℃ of growth temperatures, and thickness is 10 ~ 500nm;
5) at the upper growing p-type gallium aluminium nitrogen layer (6) of quantum well layer (5), 900 ~ 1000 ℃ of growth temperatures, thickness 10 ~ 200nm;
6) at the upper growing p-type gallium nitride layer (7) of p-type gallium aluminium nitrogen layer (6), 900 ~ 1000 ℃ of growth temperatures, thickness 50 ~ 300nm;
7) at p-type gallium nitride layer (7) the highly doped p-type gallium nitride layer of upper growth (8), then the grow indium aluminium nitrogen layer (9) of non-doping, the highly doped N-shaped gallium nitride layer of regrowth (10), the thickness of described three layers is all less than 20nm, 900 ~ 1000 ℃ of growth temperatures, form polarization tunnel junction by highly doped p-type gallium nitride layer (8), non-doped indium aluminium nitrogen layer (9) and highly doped N-shaped gallium nitride layer (10).
7. the preparation method of a kind of GaN base LED epitaxial wafer with polarization tunnel junction claimed in claim 6, is characterized in that the N-shaped gallium nitride layer (4) at highly doped N-shaped gallium nitride layer (10) regrowth 0.1 ~ 5 μ m.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2015067096A1 (en) * | 2013-11-11 | 2015-05-14 | 厦门市三安光电科技有限公司 | Nitride light-emitting diode |
| CN105405940A (en) * | 2015-12-14 | 2016-03-16 | 华灿光电股份有限公司 | Light emitting diode epitaxial wafer with novel structure and preparation method thereof |
| WO2017136832A1 (en) * | 2016-02-05 | 2017-08-10 | The Regents Of The University Of California | Iii-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers |
| JP2017157667A (en) * | 2016-03-01 | 2017-09-07 | 学校法人 名城大学 | Nitride semiconductor light-emitting device |
| US10186835B2 (en) | 2013-12-30 | 2019-01-22 | The Regents Of The University Of California | Monolithic integration of optically pumped III-nitride devices |
| CN110168752A (en) * | 2016-10-28 | 2019-08-23 | 亮锐有限责任公司 | Method for growing light emitting device under ultraviolet irradiation |
| CN113421952A (en) * | 2021-06-23 | 2021-09-21 | 南方科技大学 | Micro LED chip and preparation method thereof |
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| US11411137B2 (en) | 2016-02-05 | 2022-08-09 | The Regents Of The University Of California | III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers |
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| CN110168752A (en) * | 2016-10-28 | 2019-08-23 | 亮锐有限责任公司 | Method for growing light emitting device under ultraviolet irradiation |
| CN110168752B (en) * | 2016-10-28 | 2022-02-22 | 亮锐有限责任公司 | Method for growing light emitting device under ultraviolet irradiation |
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