CN103839830A - MOSFET with SiGeSn channel and forming method thereof - Google Patents
MOSFET with SiGeSn channel and forming method thereof Download PDFInfo
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Abstract
The invention provides an MOSFET with a SiGeSn channel and a forming method thereof. The forming method comprises the following steps of providing a substrate with the top provided with a SiGe layer, injecting atoms or molecules or ions or plasma containing a Sn element into the surface layer of the SiGe layer so that a SiGeSn layer can be formed, and forming a gate stack structure on the SiGeSn layer and a source and drain on the two sides of the gate stack structure. According to the forming method of the MOSFET, a field effect transistor with the SiGeSn channel can be formed; the thickness of the SiGeSn channel is small, the crystalline quality is good, and therefore the transistor has the good electrical property; the method has the advantages of being simple and easy to implement and low in cost.
Description
Technical field
The present invention relates to field of semiconductor manufacture, be specifically related to MOSFET of a kind of SiGeSn of having raceway groove and forming method thereof.
Background technology
Along with the development of microelectric technique, constantly the dwindling of device size, the mobility that Si material is lower has become the principal element of restriction device performance.For the performance of continuous boost device, must adopt the more channel material of high mobility.The main technical schemes of research is at present: adopt Ge or SiGe material to do the channel material of PMOSFET device, III-V compound semiconductor materials is the channel material of NMOSFET device.Ge has the hole mobility that is four times in Si, and along with deepening continuously of research, the technological difficulties in Ge or SiGe channel mosfet are captured one by one.With the Ge Ge of compatibility mutually
1-xsn
x(GeSn) alloy is a kind of IV family semi-conducting material, there is good characteristic of semiconductor, for example, strain GeSn material has the hole mobility higher than Ge, there is the prospect that is applied to PMOSFET device channel, and there is good compatibility with complementary metal oxide semiconductors (CMOS) (CMOS) technique of silicon.
But the GeSn alloy of the high Sn content of direct growth high-quality is very difficult.First, the equilirbium solid solubility of Sn in Ge is less than 1%(and is about 0.3%); Secondly, the surface of Sn can be less than Ge, is very easy to occur fractional condensation on surface; Again, Ge and α-Sn have very large lattice mismatch (14.7%).In order to suppress the fractional condensation on surface of Sn, improve the content of Sn, can in the time of Material growth, mix a certain amount of Si, form SiGeSn layer.The lattice constant of Si is less than Ge, and the lattice constant of Sn is larger than Ge, by mix Si in GeSn alloy, can improve the stability of GeSn alloy.
In the time of growth SiGeSn material, the method conventionally adopting is molecular beam epitaxy (MBE).Wherein, the process of existing MBE technique growth SiGeSn material is: first epitaxial growth one deck SiGe resilient coating on substrate, then epitaxy Si GeSn film.The method can obtain the good SiGeSn film of crystal mass, but apparatus expensive, growth course is comparatively time-consuming, and cost is higher, in large-scale production, will be subject to certain limitation.Also someone adopts chemical vapor deposition (CVD) technique growth SiGeSn film, but the SiGeSn film quality making is poor, and thermal stability is not good, and the easy fractional condensation of Sn, is not suitable for semiconductor device yet.And, in MOSFET structure, the method that generally need to adopt constituency to form forms SiGeSn at source-drain area, can adopt in theory chemical vapor deposition to carry out selective growth SiGeSn film, and the thermal stability of the method in the time of non-selective growth SiGeSn alloy is not good at present, the easy fractional condensation of Sn, its selective growth technique is still immature, and cost is also higher.
Summary of the invention
The present invention is intended to solve at least to a certain extent and in above-mentioned MOSFET, is difficult to form the measured SiGeSn film of matter, problem that production cost is high.For this reason, the object of the invention is to propose a kind of simple and field-effect transistor with SiGeSn raceway groove that cost is low and forming method thereof.
For achieving the above object, can comprise the following steps according to the formation method of the MOSFET with SiGeSn raceway groove of the embodiment of the present invention: provide top to there is the substrate of SiGe layer; Inject the atom, molecule, ion or the plasma that contain Sn element to described SiGe layer top layer, to form SiGeSn layer; On described SiGeSn layer, form grid stacked structure, and in formation source, described grid stacked structure both sides and leakage.
Can form the field-effect transistor with SiGeSn raceway groove according to the formation method of the embodiment of the present invention, wherein the thinner thickness of SiGeSn raceway groove, crystal mass are better, therefore transistor has good electric property, and that this method has advantages of is simple, cost is low.
Alternatively, also there is following technical characterictic according to the formation method of the MOSFET with SiGeSn raceway groove of the embodiment of the present invention:
In an example of the present invention, also comprise: before described injection, on described substrate, form mask, in mask, form the opening of device region, expose described SiGe layer at described aperture position.
In an example of the present invention, also comprise: form grid side wall in the stacking both sides of described grid.
In an example of the present invention, the method for described injection comprises Implantation.
In an example of the present invention, described Implantation comprises that plasma source Implantation and plasma immersion ion inject.
In an example of the present invention, the method for described injection comprises magnetron sputtering.
In an example of the present invention, in the process of utilizing described magnetron sputtering to inject, on described substrate, load back bias voltage.
In an example of the present invention, also comprise: remove the Sn film that described magnetron sputtering forms on described SiGeSn layer.
In an example of the present invention, utilize SiGeSn and Sn are had to high corrosion to select the solution of ratio to clean to remove described Sn film.
In an example of the present invention, the process of described injection heats described substrate, and heating-up temperature is 100-600 DEG C.
In an example of the present invention, also comprise: after described injection, to the annealing of SiGeSn layer, annealing temperature is 100-600 DEG C.
In an example of the present invention, described SiGeSn layer is strain SiGe Sn layer.
In an example of the present invention, the thickness of described strain SiGe Sn layer is 0.5-100nm.
In an example of the present invention, in described strain SiGe Sn layer, the atomic percentage conc of Sn is less than 20%.
In an example of the present invention, the substrate that described top has SiGe layer comprises: SiGe substrate, the Si substrate with SiGe surface or Ge substrate on insulator.
For achieving the above object, according to the MOSFET with SiGeSn raceway groove of the embodiment of the present invention, comprising: substrate; Be formed on the SiGeSn raceway groove at the top of substrate; Be formed on the grid stacked structure on described SiGeSn raceway groove; And be formed on source and the leakage of described grid stacked structure both sides.
According to the MOSFET with SiGeSn raceway groove of the embodiment of the present invention, have advantages of that electric property is good.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Brief description of the drawings
Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination is understood becoming the description of embodiment obviously and easily, wherein:
Fig. 1 is the flow chart of the formation method of the MOSFET with SiGeSn raceway groove of first embodiment of the invention.
Fig. 2 (a) is the detailed process schematic diagram of the formation method shown in Fig. 1 to Fig. 2 (c).
Fig. 3 is the flow chart of the formation method of the MOSFET with SiGeSn raceway groove of second embodiment of the invention.
Fig. 4 (a) is the detailed process schematic diagram of the formation method shown in Fig. 3 to Fig. 4 (d).
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, be intended to for explaining the present invention, and can not be interpreted as limitation of the present invention.
In the present invention, unless otherwise clearly defined and limited, First Characteristic Second Characteristic it " on " or D score can comprise that the first and second features directly contact, also can comprise that the first and second features are not directly contacts but by the other feature contact between them.And, First Characteristic Second Characteristic " on ", " top " and " above " comprise First Characteristic directly over Second Characteristic and oblique upper, or only represent that First Characteristic level height is higher than Second Characteristic.First Characteristic Second Characteristic " under ", " below " and " below " comprise First Characteristic under Second Characteristic and tiltedly, or only represent that First Characteristic level height is less than Second Characteristic.
According to the formation method of the MOSFET with SiGeSn raceway groove of first embodiment of the invention, as shown in Figure 1, can comprise the steps:
S11. provide top to there is the substrate of SiGe layer.
Particularly, this substrate 10 can be SiGe substrate (SiGe-On-Insulator, SiGeOI) on insulator, have the Si substrate on SiGe surface or Ge substrate (comprising that surface local region is Si substrate or the Ge substrate of SiGe) etc., with reference to figure 2(a).The Si substrate that is SiGe for surface local region or Ge substrate, in one embodiment of the invention, can form SiGe layer by selective epitaxial process regional area extension on Si substrate or Ge substrate; In another embodiment of the present invention, can form by photoetching and etching technics Si substrate or the Ge substrate that surface local region is SiGe having on the Si substrate on SiGe surface or Ge substrate.
S12. inject the atom, molecule, ion or the plasma that contain Sn element to SiGe layer top layer, to form SiGeSn layer.
Particularly, inject the atom, molecule, ion or the plasma that contain Sn element to SiGe layer top layer, change SiGe layer top layer or whole SiGe layer into target SiGeSn layer 20.This SiGeSn layer 20 can be as channel region, source region and the drain region of MOSFET.With reference to figure 2(b).Certainly, this SiGeSn layer 20 also can only be used as the channel region of MOSFET.
S13. on SiGeSn layer, form grid stacked structure, and in formation source, grid stacked structure both sides and leakage.
Particularly, on SiGeSn layer 20, form the grid stacked structure 30 that comprises gate dielectric layer 30a and grid layer 30b.And, can be by technique formation source and leakages in the SiGeSn layer 20 of grid stacked structure 30 both sides such as doping.So far, formed the MOSFET with SiGeSn channel region.Alternatively, can also form grid side wall 40 in stacking 30 both sides of grid.With reference to figure 2(c).It should be noted that, in step S13, can adopt first grid technique (first form grid stacked structure after formation source and leakage), also can adopt rear grid technique (first to form false grid, form again source and leakage, then remove false grid, finally form grid stacked structure in false gate region).
According to the formation method of the MOSFET of the embodiment of the present invention, can form the field-effect transistor that there is raceway groove, source and leakage and be SiGeSn material, wherein the thinner thickness of SiGeSn raceway groove, crystal mass are better, therefore transistor has good electric property, and that this method has advantages of is simple, cost is low.
According to the formation method of the MOSFET with SiGeSn raceway groove of second embodiment of the invention, as shown in Figure 3, can comprise the steps:
S21. provide top to there is the substrate of SiGe layer.
Particularly, substrate 10 is provided, this substrate 10 can be SiGe substrate (SiGe-On-Insulator, SiGeOI) on insulator, have the Si substrate on SiGe surface or Ge substrate (comprising that surface local region is Si substrate or the Ge substrate of SiGe) etc., with reference to figure 4(a).The Si substrate that is SiGe for surface local region or Ge substrate, in one embodiment of the invention, can form SiGe layer by selective epitaxial process regional area extension on Si substrate or Ge substrate; In another embodiment of the present invention, can form by photoetching and etching technics Si substrate or the Ge substrate that surface local region is SiGe having on the Si substrate on SiGe surface or Ge substrate.
S22. on substrate, form mask, in mask, form the opening of device region, expose SiGe layer at aperture position.
Particularly, on substrate 10, form mask 10a by deposition or coating processes, then on mask 10a, form the opening of patterned device region by photoetching and etching technics, expose SiGe layer at aperture position.With reference to figure 4(b).
S23. inject the atom, molecule, ion or the plasma that contain Sn element to SiGe layer top layer, to form SiGeSn layer at aperture position.
Particularly, inject the atom, molecule, ion or the plasma that contain Sn element to SiGe layer top layer, the SiGe layer top layer that opening part is exposed or all SiGe layer change target SiGeSn layer 20 into.With reference to figure 4(c).After injection, mask 10a can remove also and can retain.
S24. on SiGeSn layer, form grid stacked structure, and in formation source, grid stacked structure both sides and leakage.
Particularly, on SiGeSn layer 20, form the grid stacked structure 30 that comprises gate dielectric layer 30a and grid layer 30b.And, can be by technique formation source and leakages in the SiGeSn layer 20 of grid stacked structure 30 both sides such as doping.So far, formed the MOSFET with SiGeSn channel region.Alternatively, can also form grid side wall 40 in stacking 30 both sides of grid.With reference to figure 4(d).
According to the formation method of the MOSFET of the embodiment of the present invention, can form that to have raceway groove be that SiGeSn material, source and leakage are the field-effect transistor of SiGe material, wherein the thinner thickness of SiGeSn raceway groove, crystal mass are better, therefore transistor has good electric property, and that this method has advantages of is simple, cost is low.
In the formation method of MOSFET according to the above embodiment of the present invention, by utilizing injection technology to carry out surface modification to original SiGe layer.The atom, molecule, ion or the plasma that are about to contain Sn element are injected in original SiGe layer, by controlling suitable temperature and implantation dosage, make the not obvious diffusion of Sn element of injecting, just can make the Sn atom in lattice can not assemble the sediment that forms Sn, keep the metastable state of SiGeSn alloy and fractional condensation does not occur, can obtain like this thinner thickness, the good SiGeSn layer of quality, have advantages of simple, cost is low.And in existing SiGeSn formation method, MBE method needs expensive equipment and needs ultra high vacuum, complex process and cost are high; CVD method is also not exclusively ripe, because growth temperature is high, thus often there is the fractional condensation of Sn element in metastable SiGeSn, thus the crystal mass of SiGeSn layer affected, and its equipment and comparatively costliness of source of the gas, thereby cost is also higher.
It should be noted that, in injection technology process, original SiGe layer can only have surface part to be changed to SiGeSn layer, also can all be changed to SiGeSn layer.Particularly, in the time that the source of MOSFET needs to form thicker SiGeSn layer with leakage, can inject the ion or the plasma that contain Sn element.Ion and energy of plasma are high, can inject and reach certain depth.In the time that the source of MOSFET needs to form thinner SiGeSn layer with leakage, not only inject ion or plasma and can form SiGeSn layer, the molecule that injects Sn atom or contain Sn element also can form SiGeSn layer.
In an example of the present invention, the method of injecting can adopt Implantation, that is: incide in SiGe layer and go thering is ion beam certain energy, that contain Sn element (comprising Sn ion or the plasma containing Sn element), and rest in SiGe layer, make SiGe layer segment or be all converted to SiGeSn alloy.The degree of depth that changes injection by changing the energy of ion beam, ion beam energy is higher, injects darker.In injection process, can adopt the voltage of variation to obtain the ion beam energy of variation, thereby Sn element is distributed within the specific limits comparatively equably.Particularly, except conventional Implantation, Implantation also comprises that plasma source Implantation and plasma immersion ion inject, and plasma based ion is injected.In the time that plasma based ion is injected, SiGe layer is buried in the plasma that contains Sn element, accelerated under electric field action containing the cation of Sn element, and directive SiGe layer surface is also injected in SiGe layer.Inject by plasma based ion, can be easy to the implantation dosage that reaches very high, be easy to the SiGeSn layer of the Sn content that obtains 1%～20%, highly efficient in productivity, cost is also very low, and is subject to the impact of surface configuration little, and nonplanar SiGe surface also can be realized equably and being injected.Implantation can form thicker SiGeSn layer, and Implantation Energy is higher, and SiGeSn layer is thicker.Preferably, the thickness of SiGeSn layer is 0.5-100nm.
In an example of the present invention, the method for injection can adopt magnetron sputtering.When magnetron sputtering, Ar ion accelerates to fly to negative electrode Sn target or the target containing Sn under electric field action, and with high-energy bombardment target surface, makes target generation sputter.Sputtering particle is mainly atom, also has a small amount of ion.By adjusting voltage of electric field, the technological parameters such as vacuum degree, make sputtering particle have higher energy, and with higher speed directive SiGe layer, part particle can be injected in SiGe layer and form metastable SiGeSn alloy.Alternatively, in the process of utilizing magnetron sputtering to inject to SiGe layer, on substrate, load back bias voltage, such as-40～-120V, can make like this part particle sputtering there is more high-energy, be conducive to particle and be injected into the more depths on SiGe top layer, for example, can be deep to some nanometers.It should be noted that, the material sputtering during due to magnetron sputtering is more, conventionally can after forming SiGeSn layer, further form Sn film.Therefore after magnetron sputtering, also need to remove the Sn film that magnetron sputtering forms on SiGeSn layer.For example, can utilize and SiGeSn and Sn are had to high corrosion select the solution of ratio to clean to remove Sn film and expose SiGeSn layer.Common cleaning solution comprises watery hydrochloric acid, dilute sulfuric acid, rare nitric acid.The thickness of the SiGeSn layer remaining after cleaning is 0.5-20nm, and preferably, this SiGeSn layer thickness is 0.5-10nm.
In an example of the present invention, in injection technology, heating-up temperature can be controlled between 100-600 DEG C, preferably 150-450 DEG C.The film quality obtaining under this temperature range is better.Temperature is too low, injects the damage that brings and can not repair, SiGeSn layer second-rate; Excess Temperature, will the Sn in SiGeSn layer be spread seriously, and the solid solubility of Sn in SiGe be very low, and the Sn in SiGeSn layer easily separates out and forms Sn sediment.
In an example of the present invention, after forming SiGeSn layer, can also strengthen this SiGeSn layer by annealing in process.The temperature range of annealing is 100-600 DEG C, preferably 150-450 DEG C.Temperature is too low, injects the damage that brings and can not repair, SiGeSn layer second-rate; Excess Temperature, will the Sn in SiGeSn layer be spread seriously, and the solid solubility of Sn in SiGe be very low, and the Sn in SiGeSn easily separates out and forms Sn sediment.
In an example of the present invention, SiGeSn layer is strain SiGe Sn layer.The thickness of strain SiGe Sn layer is 0.5-100nm.Be preferably 5-20nm.In strain SiGe Sn layer, the atomic percentage conc of Sn is less than 20%.It should be noted that, in the SiGeSn layer of strain, Sn content is higher completely, and it answers variation larger, and correspondingly its thickness should be reduced to below the critical thickness of relaxation, could keep complete strain.In strain SiGe Sn layer, Sn content is higher, and its critical thickness is thinner.The Ge content of answering variation and SiGe layer itself of the upper SiGeSn of SiGe and answer variation relevant.In the time that Sn content is less than 20%, the SiGeSn of complete strain answers variation approximately in the scope of 0-4%.When SiGeSn layer answer variation to be 1.5% time, the now about 30nm of the critical thickness of strain SiGe Sn layer, that is now the SiGeSn thickness of MOSFET source-drain area should not exceed 30nm; And in the time answering variation to be 0.8%, more than its critical thickness can reach 100nm, illustrate that now the SiGeSn thickness of MOSFET source-drain area can reach 100nm and SiGeSn layer still keeps complete strain.
Need to further illustrate, in the time that SiGeSn layer is strain SiGe Sn layer, in injection technology, in heating-up temperature and annealing process, the height of annealing temperature need to mate with the material character of strain SiGe Sn layer.The strain SiGe Sn layer that the atomic percentage conc that for example needs Sn in common MOSFET device is 10-15%, by adding Si, Sn atomic percentage conc is that the SiGeSn layer of 10-15% is stable substantially at 450 DEG C, thus now in injection technology in heating-up temperature and annealing process annealing temperature need to be no more than 450 DEG C.
The invention allows for a kind of MOSFET of the SiGeSn of having raceway groove, formed by above-mentioned disclosed any method, comprising: substrate; Be formed on the SiGeSn raceway groove at the top of substrate; Be formed on the grid stacked structure on SiGeSn raceway groove; And be formed on source and the leakage of grid stacked structure both sides.The MOSFET that this has SiGeSn raceway groove, has advantages of that electric property is good.
For making those skilled in the art understand better the present invention, elaboration specific embodiment is as follows:
First, prepare SiGe substrate on insulator, and adopt successively acetone, absolute ethyl alcohol, deionized water and hydrofluoric acid clean for subsequent use.
Secondly, at SiGe substrate surface deposit SiO
2as mask, photoetching also etches the opening of device region, exposes local SiGe top surface.
Then, using plasma immersion ion injection technology is injected the plasma that contains Sn element in substrate, and now substrate heating temperature is 100-200 DEG C, and injecting voltage is 10-25KeV, and implantation dosage is about 5 × 10
16/ cm
2.After injection completes, formed the thick strain SiGe Sn layer of 15-30nm on SiGe layer top layer, device region, Sn content is about 8%.The substrate that Implantation is completed carries out annealing in process, and annealing temperature is 200-300 DEG C, further to strengthen SiGeSn layer.
Then, on SiGe substrate, deposit according to this gate dielectric material HfO
2with grid material TaN/TiAl/TiN, then by photoetching and etching technics, obtain patterned HfO
2/ TaN/TiAl/TiN grid are stacking.Deposition grid spacer material, can, with silicon nitride as grid spacer material, by dry etch process, form grid side wall in the stacking both sides of grid.
Finally, the SiGeSn layer top surface of the stacking both sides of grid carried out to heavy doping technique with formation source and leakage.
Now, channel region, source-drain area have been obtained and have been the MOSFET device of SiGeSn material.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And specific features, structure, material or the feature of description can be with suitable mode combination in any one or more embodiment or example.
Although illustrated and described embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, those of ordinary skill in the art can change above-described embodiment within the scope of the invention in the situation that not departing from principle of the present invention and aim, amendment, replacement and modification.
Claims (16)
1. a formation method with the MOSFET of SiGeSn raceway groove, is characterized in that, comprises the following steps:
Provide top to there is the substrate of SiGe layer;
Inject the atom, molecule, ion or the plasma that contain Sn element to described SiGe layer top layer, to form SiGeSn layer;
On described SiGeSn layer, form grid stacked structure, and in formation source, described grid stacked structure both sides and leakage.
2. the formation method of the MOSFET with SiGeSn raceway groove as claimed in claim 1, it is characterized in that, also comprise: before described injection, on described substrate, form mask, in mask, form the opening of device region, expose described SiGe layer at described aperture position.
3. the formation method of the MOSFET with SiGeSn raceway groove as claimed in claim 1 or 2, is characterized in that, also comprises: form grid side wall in the stacking both sides of described grid.
4. the formation method of the MOSFET with SiGeSn raceway groove as described in claim 1-3 any one, is characterized in that, the method for described injection comprises Implantation.
5. the formation method of the MOSFET with SiGeSn raceway groove as claimed in claim 4, is characterized in that, described Implantation comprises that plasma source Implantation and plasma immersion ion inject.
6. the formation method of the MOSFET with SiGeSn raceway groove as described in claim 1-3 any one, is characterized in that, the method for described injection comprises magnetron sputtering.
7. the formation method of the MOSFET with SiGeSn raceway groove as claimed in claim 6, is characterized in that, in the process of utilizing described magnetron sputtering to inject, on described substrate, loads back bias voltage.
8. the formation method of the MOSFET with SiGeSn raceway groove as described in claim 6 or 7, is characterized in that, also comprises: remove the Sn film that described magnetron sputtering forms on described SiGeSn layer.
9. the formation method of the MOSFET with SiGeSn raceway groove as claimed in claim 8, is characterized in that, utilizes SiGeSn and Sn are had to high corrosion to select the solution of ratio to clean to remove described Sn film.
10. the formation method of the MOSFET with SiGeSn raceway groove as described in claim 1-3 any one, is characterized in that, the process of described injection heats described substrate, and heating-up temperature is 100-600 DEG C.
The formation method of 11. MOSFET with SiGeSn raceway groove as described in claim 1-3 any one, is characterized in that, also comprises: after described injection, to the annealing of SiGeSn layer, annealing temperature is 100-600 DEG C.
The formation method of 12. MOSFET with SiGeSn raceway groove as described in claim 1-3 any one, is characterized in that, described SiGeSn layer is strain SiGe Sn layer.
The formation method of 13. MOSFET with SiGeSn raceway groove as claimed in claim 12, is characterized in that, the thickness of described strain SiGe Sn layer is 0.5-100nm.
The formation method of 14. MOSFET with SiGeSn raceway groove as claimed in claim 12, is characterized in that, in described strain SiGe Sn layer, the atomic percentage conc of Sn is less than 20%.
The formation method of 15. MOSFET with SiGeSn raceway groove as described in claim 1-14 any one, is characterized in that, the substrate that described top has SiGe layer comprises: SiGe substrate, the Si substrate with SiGe surface or Ge substrate on insulator.
16. 1 kinds have the MOSFET of SiGeSn raceway groove, it is characterized in that, comprising:
Substrate;
Be formed on the SiGeSn raceway groove at the top of substrate;
Be formed on the grid stacked structure on described SiGeSn raceway groove; And
Be formed on source and the leakage of described grid stacked structure both sides.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015127702A1 (en) * | 2014-02-25 | 2015-09-03 | Tsinghua University | Method for forming germanium-based layer |
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| US20130183814A1 (en) * | 2012-01-13 | 2013-07-18 | Applied Materials, Inc. | Method of depositing a silicon germanium tin layer on a substrate |
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| US20130183814A1 (en) * | 2012-01-13 | 2013-07-18 | Applied Materials, Inc. | Method of depositing a silicon germanium tin layer on a substrate |
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| WANG XINCAI ET AL.: "Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing", 《APPLIED PHYSICS LETTERS》, 31 December 2007 (2007-12-31), pages 1 - 3 * |
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| WO2015127702A1 (en) * | 2014-02-25 | 2015-09-03 | Tsinghua University | Method for forming germanium-based layer |
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