CN103792036B - MEMS chip that air pressure is mutually integrated with acceleration transducer and preparation method thereof - Google Patents
MEMS chip that air pressure is mutually integrated with acceleration transducer and preparation method thereof Download PDFInfo
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- CN103792036B CN103792036B CN201410078551.XA CN201410078551A CN103792036B CN 103792036 B CN103792036 B CN 103792036B CN 201410078551 A CN201410078551 A CN 201410078551A CN 103792036 B CN103792036 B CN 103792036B
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Abstract
The invention discloses the MEMS chip that air pressure is mutually integrated with acceleration transducer, comprise monocrystalline silicon piece, glass cover-plate and glass film plates, monocrystalline silicon piece is integrated with baroceptor and acceleration transducer, baroceptor comprises the first induction silicon fiml, is multiplely positioned at the first stress sensitive resistance on the first induction silicon fiml and upwards embeds the first groove of glass cover-plate from glass cover-plate bottom, and glass film plates is provided with the gas introducing port of up/down perforation; Acceleration transducer comprises mass, the elastic cantilever be connected with mass one end, is positioned at the multiple second stress sensitive resistance on elastic cantilever and upwards embeds the second groove of glass cover-plate from glass cover-plate bottom.The invention also discloses the method for making of this chip.Advantage of the present invention: baroceptor and the same set of technique of acceleration transducer are integrated in a chip, size is little, compact conformation; Highly sensitive, reliability and good stability.This chip fabrication technique is simple, and cost is low.
Description
Technical field
The present invention relates to MEMS (MEMS (micro electro mechanical system)) chip that one applies to TPMS (system for monitoring pressure in tyre), MEMS chip that in particular a kind of air pressure is mutually integrated with acceleration transducer and preparation method thereof, belongs to MEMS technology field.
Background technology
TPMS is mainly used in Real-Time Monitoring tire pressure in vehicle traveling process, and to have a flat tire and infrabar is reported to the police, with guarantee driving safety.In sensor assembly, baroceptor detects the pressure of tire, and by radio frequency, numerical value is sent to receiver, and receiver carries out early warning judgement according to software set.The frequency whether baroceptor detects and detect then is determined by acceleration transducer, utilize acceleration transducer to the susceptibility of motion, when can realize automobile starting, Auto Power On wakes up, by movement velocity determination sense cycle during galloping, reduces power consumption while ensureing pre-alerting ability.
Involved by the structure of the MEMS chip that air pressure is mutually integrated with acceleration transducer and method for making have had in the prior art, but all there are some significant defects.If the patent No. is the patent of ZL200910051766.1, disclose a kind of testing acceleration, the integrated silicon chip of pressure and temperature and method for making, it adopts polysilicon membrane to form force sensing resistance bar and makes pressure transducer, and the temperature difference in the sealed cavity adopting thermoelectric pile to detect to be caused by acceleration carrys out sense acceleration.This patent adopt polycrystalline silicon material piezoresistance coefficient far below monocrystalline silicon, so sensitivity is on the low side; Adopt polysilicon resistance to make well heater, the power consumption of system is increased, and battery electric quantity can be exhausted very soon, and automobile is when high-speed motion in addition, and the rising of temperature is larger to the temperature differences effect in annular seal space.For another example the patent No. is the patent of ZL201010553946.2, also a kind of acceleration and pressure transducer only crystal silicon chip integrated chip and method for making is disclosed, it forms monocrystalline silicon thin film and embedded cavity by lateral etching technology, and make pressure transducer at monocrystalline silicon thin film upper surface distribution pressure drag, acceleration transducer adopts double cantilever beam and mass block structure, adopt Electrocoppering method to increase mass quality, improve sensitivity.This patent adopts sidewall root lateral etching technology to form film and cavity, and etch rate is wayward; In addition, larger mass cannot be formed, need the extra quality adopting copper-plated mode to increase mass.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of air pressure MEMS chip mutually integrated with acceleration transducer and preparation method thereof, baroceptor and acceleration transducer are integrated in a chip by this chip, compact conformation, dependable performance; And the method for making of this chip is simple, easily control, cost is low, is suitable for producing in enormous quantities.
The present invention is achieved by the following technical solutions:
The method for making of the MEMS chip that a kind of air pressure provided by the invention is mutually integrated with acceleration transducer, the MEMS chip that wherein air pressure is mutually integrated with acceleration transducer, comprise as main body monocrystalline silicon piece and lay respectively at glass cover-plate and the glass film plates of described monocrystalline silicon piece top and bottom, described monocrystalline silicon piece is integrated with baroceptor and acceleration transducer, wherein
Described baroceptor comprises the first induction silicon fiml being positioned at monocrystalline silicon piece top, multiple the first stress sensitive resistance be positioned on described first induction silicon fiml, and the first groove upwards embedded from described glass cover-plate bottom in described glass cover-plate, described first groove be positioned at described first induction silicon fiml on and can cover completely described first induction silicon fiml, the top of described first groove and described monocrystalline silicon piece forms first vacuum chamber sealed, described monocrystalline silicon piece is at first cavity having lower ending opening of the first sense film, described glass film plates is provided with the gas introducing port of up/down perforation, described gas introducing port and described first cavity connects, described multiple first stress sensitive resistance connects into pressure detection circuit,
Described acceleration transducer comprises mass, the elastic cantilever be connected with described mass one end, be positioned at the multiple second stress sensitive resistance on described elastic cantilever, and the second groove upwards embedded from described glass cover-plate bottom in described glass cover-plate, described elastic cantilever is positioned at described monocrystalline silicon piece top, described second groove to be positioned on described mass and elastic cantilever and can to cover described mass and elastic cantilever completely, described monocrystalline silicon piece is at second cavity having lower ending opening of mass and elastic cantilever, the bottom of described second cavity is airtight through described glass film plates, described second cavity and described second groove are communicated with the second vacuum chamber of the sealing of as a whole formula by the gap around mass, described multiple second stress sensitive resistance connects into acceleration detection circuit, described pressure detection circuit and acceleration detection circuit are drawn outside monocrystalline silicon piece by lead-in wire and pad,
Described method for making comprises the following steps:
(1) twin polishing monocrystalline silicon piece cleaning; Adopt photoresist to do mask, adopt the method for the light boron of ion implantation on monocrystalline silicon piece, make the resistor stripe of multiple first stress sensitive resistance and multiple second stress sensitive resistance, resistor stripe is along <111> crystal orientation;
(2) be concentrated boron area with two end regions of the anode linkage region of glass cover-plate and every root resistor stripe on monocrystalline silicon piece top, adopt the method for ion implantation to inject dense boron to concentrated boron area and form dense boron wire;
(3) adopt Low Pressure Chemical Vapor Deposition successively at monocrystalline silicon piece apical growth layer of silicon dioxide layer and one deck silicon nitride layer as insulation course;
(4) take photoresist as mask, adopt reactive ion etching process, remove the silicon nitride layer in the ohmic contact regions on monocrystalline silicon piece top, fairlead and anode linkage region and silicon dioxide layer; Then splash-proofing sputtering metal aluminium take photoresist as mask, the unnecessary aluminium of wet etching, forms lead-in wire and pad;
(5) adopt the back of the body chamber of secondary mask method wet etching monocrystalline silicon piece, thus make the needed for being formed first induction silicon fiml, mass, detailed process is as follows:
(5.1) the same method of Low Pressure Chemical Vapor Deposition that adopts grows silicon dioxide layer and silicon nitride layer successively in monocrystalline silicon piece bottom, take photoresist as mask, the silicon nitride layer adopting reactive ion etching process to remove region corresponding to required first cavity and the second cavity only leaves silicon dioxide layer; Then in the silicon dioxide layer that the second cavity is corresponding, take photoresist as mask, adopt reactive ion etching process to remove the silicon dioxide being positioned at four rectangular strip regions of mass surrounding, monocrystalline silicon piece is exposed in four the rectangular strip regions being positioned at mass surrounding, forms a mask;
(5.2) mask is utilized, Tetramethylammonium hydroxide or potassium hydroxide is adopted to carry out anisotropic etch to monocrystalline silicon piece, corrosion rate is by the concentration of Tetramethylammonium hydroxide or potassium hydroxide corrosive liquid and temperature adjusting, make four the rectangular strip regions being positioned at mass surrounding form V-type groove, the degree of depth no longer increases; Region corresponding to first cavity is not corroded owing to there being the existence of silicon dioxide;
(5.3) silicon dioxide layer adopting hydrofluorite corrosion primary mask to expose makes this region expose monocrystalline silicon piece, forms secondary mask, the region without required first cavity and the second cavity on the corresponding monocrystalline silicon piece of masked areas of secondary mask; Utilize secondary mask, Tetramethylammonium hydroxide or potassium hydroxide is adopted to continue to carry out anisotropic etch to monocrystalline silicon piece, thus define the first cavity of baroceptor, the bottom surface of the first cavity forms a plane, as the first induction silicon fiml of baroceptor, and define the mass of acceleration transducer projection simultaneously;
(6) adopt the silicon nitride layer of reactive ion etching process etching single crystal silicon chip bottom, then remove silicon dioxide layer with hydrofluorite drift, thus realize the Direct Bonding of glass and monocrystalline silicon piece;
(7) adopt the gas introducing port that machining process processed glass base plate is corresponding, then by monocrystalline silicon piece and glass film plates anode linkage, the gas introducing port of glass film plates is communicated with the first cavity of monocrystalline silicon piece;
(8) adopt sense coupling technique release mass, the silicon thin film be connected with around mass just part hollow out forms elastic cantilever girder construction;
(9) the first groove and the second groove that machining process processed glass cover plate is corresponding is adopted, then by monocrystalline silicon piece and glass cover-plate anode linkage, the first groove is made to cover the first induction silicon fiml completely, second groove covers mass and elastic cantilever completely, the second vacuum chamber of the sealing of the second groove and the as a whole formula of the second cavity connects.
As the further optimization of technique scheme, the gas introducing port of described glass film plates is covered by the first cavity and is positioned at the center position of described first induction silicon fiml.
As the further optimization of technique scheme, described pressure detection circuit is that the first stress sensitive resistance of the resistances such as four connects to form Wheatstone bridge.
As the further optimization of technique scheme, described acceleration detection circuit is that the second stress sensitive resistance of the resistances such as four connects to form Wheatstone bridge.
As the further optimization of technique scheme, described monocrystalline silicon piece is the monocrystalline silicon piece of N-type (100) crystal face.
As the further optimization of technique scheme, described mass protrudes downwards and the big up and small down trapezoid block of described mass.
The present invention has the following advantages compared to existing technology:
The method for making of the MEMS chip that air pressure provided by the invention is mutually integrated with acceleration transducer, adopt unique glass-silicon sheet-glass sandwich structure, same set of technique baroceptor and acceleration transducer is adopted to be integrated in a chip, size is little, compact conformation, internal circuit is drawn by lead-in wire and pad, is convenient to ASIC wire bonding and is packaged into one chip; For in TPMS system, the detection to air pressure and each parameter of acceleration can be completed simultaneously, adopt monocrystalline silicon piece, highly sensitive, reliability and good stability.The method for making of this chip adopts the back of the body chamber of unique secondary masking method wet etching monocrystalline silicon piece, form mass and elastic cantilever that first of baroceptor responds to silicon fiml and acceleration transducer simultaneously, can be formed directly in the mass of larger quality, without the need to additionally adopting copper facing or other modes to increase the quality of mass, adopt same set of technique to complete the making of baroceptor and acceleration transducer simultaneously, and manufacture craft is simple, easy control, cost is low, is suitable for producing in enormous quantities.
Accompanying drawing explanation
Fig. 1 is the air pressure MEMS chip surface structure schematic diagram mutually integrated with acceleration transducer.
Fig. 2 is the front vertical profile structural representation of the air pressure MEMS chip mutually integrated with acceleration transducer.
Fig. 3 is pressure detection circuit and acceleration detection circuit diagram.
Fig. 4 is glass cover-plate perspective view.
Fig. 5 is glass film plates perspective view.
Fig. 6 is pressure detection circuit and the layout of acceleration detection circuit on monocrystalline silicon piece top.
Fig. 7 is the mask that secondary mask method adopts.
Fig. 8 is the secondary mask that secondary mask method adopts.
Fig. 9 is the monocrystalline silicon piece perspective view obtained after adopting secondary mask method.
Embodiment
Elaborate to embodiments of the invention below, the present embodiment is implemented under premised on technical solution of the present invention, give detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
See Fig. 1, Fig. 2, Fig. 4, Fig. 5, Fig. 9, the MEMS chip that a kind of air pressure provided by the invention is mutually integrated with acceleration transducer, comprise as main body monocrystalline silicon piece 2 and lay respectively at glass cover-plate 1 and the glass film plates 3 of monocrystalline silicon piece 2 top and bottom, monocrystalline silicon piece 2 is the monocrystalline silicon piece of N-type (100) crystal face, and monocrystalline silicon piece 2 all passes through anode linkage with glass cover-plate 1 and glass film plates 3.Monocrystalline silicon piece 2 is integrated with baroceptor and acceleration transducer, wherein,
Baroceptor comprise be positioned at monocrystalline silicon piece 2 top the first induction silicon fiml 21, be multiplely positioned at the first stress sensitive resistance R1 on the first induction silicon fiml 21 and upwards embed the first groove 11 of glass cover-plate 1 from glass cover-plate 1 bottom, first groove 11 to be positioned on the first induction silicon fiml 21 and can to cover the first induction silicon fiml 21 completely, first groove 11 forms first vacuum chamber sealed with the top of monocrystalline silicon piece 2, and monocrystalline silicon piece 2 is at first cavity 24 having lower ending opening of the first sense film 21.Glass film plates 3 is provided with the gas introducing port 31 of up/down perforation, gas introducing port 31 is communicated with the first cavity 24, the gas introducing port 31 of glass film plates 3 is covered by the first cavity 24 and is positioned at the center position of the first induction silicon fiml 21, thus ensure that the accuracy that baroceptor detects.Multiple first stress sensitive resistance R1 connects into pressure detection circuit;
Acceleration transducer comprises mass 23, the elastic cantilever 22 be connected with mass 23 one end, is positioned at the multiple second stress sensitive resistance R2 on elastic cantilever 22 and upwards embeds the second groove 12 of glass cover-plate 1 from glass cover-plate 1 bottom, elastic cantilever 22 is positioned at monocrystalline silicon piece 2 top, and mass 23 protrudes downwards and the big up and small down trapezoid block of mass 23.Second groove 12 to be positioned on mass 23 and elastic cantilever 22 and can to cover mass 23 and elastic cantilever 22 completely, monocrystalline silicon piece 2 is at second cavity 25 having lower ending opening of mass 23 and elastic cantilever 22, the bottom of the second cavity 25 is airtight through glass film plates 3, second cavity 25 and the second groove 12 are communicated with the second vacuum chamber of the sealing of as a whole formula by the gap around mass 23, multiple second stress sensitive resistance R2 connects into acceleration detection circuit.
See Fig. 3, Fig. 6, pressure detection circuit is that the first stress sensitive resistance R1 of the resistances such as four connects to form Wheatstone bridge.Acceleration detection circuit is that the second stress sensitive resistance R2 of the resistances such as four connects to form Wheatstone bridge.Pressure detection circuit and acceleration detection circuit are drawn outside monocrystalline silicon piece 2 by lead-in wire and pad 26.In Fig. 3,4 pin are the positive pole of power supply input, and 2 pin and 6 pin are respectively the negative pole of power supply input; Four the first stress sensitive resistance R1 of baroceptor are distributed on the first induction silicon fiml 21, when there is pressure reduction in the both sides of the first induction silicon fiml 21, there is deformation in the first induction silicon fiml 21, according to the piezoresistive effect of silicon, the resistance of four the first stress sensitive resistance R1 will change, and can be extrapolated the size of air pressure by the voltage difference measuring 1 pin and 3 pin.Four the second stress sensitive resistance R2 of acceleration transducer are distributed on elastic cantilever 22, when there is acceleration, mass 23 is stressed makes elastic cantilever 22 flexural deformation, according to the piezoresistive effect of silicon, the resistance of four the second stress sensitive resistance R2 will change, and can be extrapolated the size of acceleration by the voltage difference measuring 5 pin and 7 pin.
The MEMS chip that air pressure provided by the invention is mutually integrated with acceleration transducer, adopt unique glass-silicon sheet-glass sandwich structure, same set of technique baroceptor and acceleration transducer is adopted to be integrated in a chip, size is little, compact conformation, internal circuit is drawn by lead-in wire and pad 26, is convenient to ASIC wire bonding and is packaged into one chip; For in TPMS system, the detection to air pressure and each parameter of acceleration can be completed simultaneously, adopt monocrystalline silicon piece 2, highly sensitive, reliability and good stability.
Present invention also offers the method for making of the above-mentioned air pressure MEMS chip mutually integrated with acceleration transducer, comprise the steps:
(1) monocrystalline silicon piece 2 preferentially chooses the monocrystalline silicon piece of N-type (100) crystal face, and twin polishing monocrystalline silicon piece 2 also cleans; Photoresist is adopted to do mask, adopt the method for the light boron of ion implantation on monocrystalline silicon piece 2, make the resistor stripe of multiple first stress sensitive resistance R1 and multiple second stress sensitive resistance R2 to the resistor stripe position in Fig. 6, resistor stripe is along <111> crystal orientation;
(2) be concentrated boron area with two end regions of the anode linkage region of glass cover-plate 1 and every root resistor stripe on monocrystalline silicon piece 2 top, adopt the method for ion implantation to inject dense boron to concentrated boron area and form dense boron wire.Injecting dense boron at the two ends of resistor stripe is form Ohmic contact in order to realize between aluminium electrode and resistor stripe; Because the anode linkage place of glass cover-plate and monocrystalline silicon piece can not arrange aluminum conductor, so carry out the doping of dense boron in this region to silicon chip to form dense boron wire.
(3) adopt Low Pressure Chemical Vapor Deposition successively at monocrystalline silicon piece 2 apical growth layer of silicon dioxide layer and one deck silicon nitride layer as insulation course;
(4) take photoresist as mask, adopt reactive ion etching process, remove the silicon nitride layer in the ohmic contact regions on monocrystalline silicon piece 2 top, fairlead and anode linkage region and silicon dioxide layer; Then splash-proofing sputtering metal aluminium take photoresist as mask, the unnecessary aluminium of wet etching, forms lead-in wire and pad 26;
(5) adopt the back of the body chamber of secondary mask method wet etching monocrystalline silicon piece 2, thus make the needed for being formed first induction silicon fiml 21, mass 23, detailed process is as follows:
(5.1) the same method of Low Pressure Chemical Vapor Deposition that adopts grows silicon dioxide layer and silicon nitride layer successively in monocrystalline silicon piece 2 bottom, see Fig. 7, take photoresist as mask, adopt the silicon nitride layer in region corresponding to the first cavity 24 needed for reactive ion etching process removal and the second cavity 25 only to leave silicon dioxide layer; Then in the silicon dioxide layer of the second cavity 25 correspondence, take photoresist as mask, reactive ion etching process is adopted to remove the silicon dioxide being positioned at four rectangular strip 27 regions of required mass 23 surrounding, monocrystalline silicon piece 2 is exposed in four rectangular strip 27 regions being positioned at mass 23 surrounding, form without masked areas, thus form a mask;
(5.2) mask is utilized, Tetramethylammonium hydroxide or potassium hydroxide is adopted to carry out anisotropic etch to monocrystalline silicon piece 2, corrosion rate is by the concentration of Tetramethylammonium hydroxide or potassium hydroxide corrosive liquid and temperature adjusting, four rectangular strip 27 regions (i.e. Fig. 7 without masked areas) making to be arranged in mass 23 surrounding form V-type groove, and the degree of depth no longer increases; Region corresponding to first cavity 24 is not corroded owing to there being the existence of silicon dioxide;
(5.3) see Fig. 8, the silicon dioxide layer adopting hydrofluorite corrosion primary mask to expose makes this region expose monocrystalline silicon piece 2, form secondary mask, the region without required first cavity 24 and the second cavity 25 on the corresponding monocrystalline silicon piece 2 of masked areas of secondary mask in Fig. 8; Utilize secondary mask, Tetramethylammonium hydroxide or potassium hydroxide is adopted to continue to carry out anisotropic etch to monocrystalline silicon piece 2, thus define the first cavity 24 of baroceptor, the bottom surface of the first cavity 24 forms a plane, as the first induction silicon fiml 21 of baroceptor, and define the mass 23 of acceleration transducer projection; After adopting the back of the body chamber of secondary mask method wet etching monocrystalline silicon piece 2, the spatial structure of the monocrystalline silicon piece 2 obtained as shown in Figure 9.
(6) adopt the silicon nitride layer of reactive ion etching process etching single crystal silicon chip 2 bottom, then remove silicon dioxide layer with hydrofluorite drift, thus realize the Direct Bonding of glass and monocrystalline silicon piece 2;
(7) adopt the gas introducing port 31 of machining process processed glass base plate 3 correspondence, then by monocrystalline silicon piece 2 and glass film plates 3 anode linkage, the gas introducing port 31 of glass film plates 3 is communicated with the first cavity 24 of monocrystalline silicon piece 2; As preferably, after glass film plates 3 and monocrystalline silicon piece 2 bonding, its gas introducing port 31 is covered completely by the first cavity 24 and is positioned at the center position of the first induction silicon fiml 21;
(8) adopt sense coupling technique release mass 23, the silicon thin film be connected with around mass 23 just part hollow out forms elastic cantilever 22 structure;
(9) the first groove 11 and the second groove 12 of machining process processed glass cover plate 1 correspondence is adopted, then by monocrystalline silicon piece 2 and glass cover-plate 1 anode linkage, the first groove 11 is made to cover the first induction silicon fiml 21 completely, second groove 12 covers mass 23 and elastic cantilever 22, second groove 12 are communicated with the sealing of as a whole formula the second vacuum chamber with the second cavity 25 completely.
The method for making of this chip adopts the back of the body chamber of unique secondary masking method wet etching monocrystalline silicon piece 2, form mass 23 and elastic cantilever 22 that first of baroceptor responds to silicon fiml 21 and acceleration transducer simultaneously, can be formed directly in the mass 23 of larger quality, without the need to additionally adopting copper facing or other modes to increase the quality of mass 23, namely adopt same set of technique to complete the making of baroceptor and acceleration transducer simultaneously, and manufacture craft is simple, easy control, cost is low, is suitable for producing in enormous quantities.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. the method for making of the MEMS chip that air pressure is mutually integrated with acceleration transducer, the MEMS chip that wherein air pressure is mutually integrated with acceleration transducer, comprise as main body monocrystalline silicon piece and lay respectively at glass cover-plate and the glass film plates of described monocrystalline silicon piece top and bottom, described monocrystalline silicon piece is integrated with baroceptor and acceleration transducer, wherein
Described baroceptor comprises the first induction silicon fiml being positioned at monocrystalline silicon piece top, multiple the first stress sensitive resistance be positioned on described first induction silicon fiml, and the first groove upwards embedded from described glass cover-plate bottom in described glass cover-plate, described first groove be positioned at described first induction silicon fiml on and can cover completely described first induction silicon fiml, the top of described first groove and described monocrystalline silicon piece forms first vacuum chamber sealed, described monocrystalline silicon piece is at first cavity having lower ending opening of the first sense film, described glass film plates is provided with the gas introducing port of up/down perforation, described gas introducing port and described first cavity connects, described multiple first stress sensitive resistance connects into pressure detection circuit,
Described acceleration transducer comprises mass, the elastic cantilever be connected with described mass one end, be positioned at the multiple second stress sensitive resistance on described elastic cantilever, and the second groove upwards embedded from described glass cover-plate bottom in described glass cover-plate, described elastic cantilever is positioned at described monocrystalline silicon piece top, described second groove to be positioned on described mass and elastic cantilever and can to cover described mass and elastic cantilever completely, described monocrystalline silicon piece is at second cavity having lower ending opening of mass and elastic cantilever, the bottom of described second cavity is airtight through described glass film plates, described second cavity and described second groove are communicated with the second vacuum chamber of the sealing of as a whole formula by the gap around mass, described multiple second stress sensitive resistance connects into acceleration detection circuit, described pressure detection circuit and acceleration detection circuit are drawn outside monocrystalline silicon piece by lead-in wire and pad,
It is characterized in that: described method for making comprises the following steps:
(1) twin polishing monocrystalline silicon piece cleaning; Adopt photoresist to do mask, adopt the method for the light boron of ion implantation on monocrystalline silicon piece, make the resistor stripe of multiple first stress sensitive resistance and multiple second stress sensitive resistance, resistor stripe is along <111> crystal orientation;
(2) be concentrated boron area with two end regions of the anode linkage region of glass cover-plate and every root resistor stripe on monocrystalline silicon piece top, adopt the method for ion implantation to inject dense boron to concentrated boron area and form dense boron wire;
(3) adopt Low Pressure Chemical Vapor Deposition successively at monocrystalline silicon piece apical growth layer of silicon dioxide layer and one deck silicon nitride layer as insulation course;
(4) take photoresist as mask, adopt reactive ion etching process, remove the silicon nitride layer in the ohmic contact regions on monocrystalline silicon piece top, fairlead and anode linkage region and silicon dioxide layer; Then splash-proofing sputtering metal aluminium take photoresist as mask, the unnecessary aluminium of wet etching, forms lead-in wire and pad;
(5) adopt the back of the body chamber of secondary mask method wet etching monocrystalline silicon piece, thus make the needed for being formed first induction silicon fiml, mass, detailed process is as follows:
(5.1) the same method of Low Pressure Chemical Vapor Deposition that adopts grows silicon dioxide layer and silicon nitride layer successively in monocrystalline silicon piece bottom, take photoresist as mask, the silicon nitride layer adopting reactive ion etching process to remove region corresponding to required first cavity and the second cavity only leaves silicon dioxide layer; Then in the silicon dioxide layer that the second cavity is corresponding, take photoresist as mask, adopt reactive ion etching process to remove the silicon dioxide being positioned at four rectangular strip regions of mass surrounding, monocrystalline silicon piece is exposed in four the rectangular strip regions being positioned at mass surrounding, forms a mask;
(5.2) mask is utilized, Tetramethylammonium hydroxide or potassium hydroxide is adopted to carry out anisotropic etch to monocrystalline silicon piece, corrosion rate is by the concentration of Tetramethylammonium hydroxide or potassium hydroxide corrosive liquid and temperature adjusting, make four the rectangular strip regions being positioned at mass surrounding form V-type groove, the degree of depth no longer increases; Region corresponding to first cavity is not corroded owing to there being the existence of silicon dioxide;
(5.3) silicon dioxide layer adopting hydrofluorite corrosion primary mask to expose makes this region expose monocrystalline silicon piece, forms secondary mask, the region without required first cavity and the second cavity on the corresponding monocrystalline silicon piece of masked areas of secondary mask; Utilize secondary mask, Tetramethylammonium hydroxide or potassium hydroxide is adopted to continue to carry out anisotropic etch to monocrystalline silicon piece, thus define the first cavity of baroceptor, the bottom surface of the first cavity forms a plane, as the first induction silicon fiml of baroceptor, and define the mass of acceleration transducer projection simultaneously;
(6) adopt the silicon nitride layer of reactive ion etching process etching single crystal silicon chip bottom, then remove silicon dioxide layer with hydrofluorite drift, thus realize the Direct Bonding of glass and monocrystalline silicon piece;
(7) adopt the gas introducing port that machining process processed glass base plate is corresponding, then by monocrystalline silicon piece and glass film plates anode linkage, the gas introducing port of glass film plates is communicated with the first cavity of monocrystalline silicon piece;
(8) adopt sense coupling technique release mass, the silicon thin film be connected with around mass just part hollow out forms elastic cantilever girder construction;
(9) the first groove and the second groove that machining process processed glass cover plate is corresponding is adopted, then by monocrystalline silicon piece and glass cover-plate anode linkage, the first groove is made to cover the first induction silicon fiml completely, second groove covers mass and elastic cantilever completely, the second vacuum chamber of the sealing of the second groove and the as a whole formula of the second cavity connects.
2. the method for making of the MEMS chip that air pressure according to claim 1 is mutually integrated with acceleration transducer, is characterized in that: the gas introducing port of described glass film plates is covered by the first cavity and is positioned at the center position of described first induction silicon fiml.
3. the method for making of the MEMS chip that air pressure according to claim 1 is mutually integrated with acceleration transducer, is characterized in that: described pressure detection circuit is that the first stress sensitive resistance of the resistances such as four connects to form Wheatstone bridge.
4. the method for making of the MEMS chip that air pressure according to claim 1 is mutually integrated with acceleration transducer, is characterized in that: described acceleration detection circuit is that the second stress sensitive resistance of the resistances such as four connects to form Wheatstone bridge.
5. the method for making of the MEMS chip that air pressure according to claim 1 is mutually integrated with acceleration transducer, is characterized in that: described monocrystalline silicon piece is the monocrystalline silicon piece of N-type (100) crystal face.
6. according to the method for making of the arbitrary described air pressure of claim 1 to 5 MEMS chip mutually integrated with acceleration transducer, it is characterized in that: described mass protrudes downwards and the big up and small down trapezoid block of described mass.
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Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI513981B (en) * | 2014-11-13 | 2015-12-21 | Ind Tech Res Inst | Mems apparatus with multiple chambers and method for manufacturing the same |
| CN105181011A (en) * | 2015-08-12 | 2015-12-23 | 中国电子科技集团公司第三十八研究所 | Pressure and acceleration two-in-one sensor of packaging structure and preparation method thereof |
| CN105181231A (en) * | 2015-08-12 | 2015-12-23 | 中国电子科技集团公司第三十八研究所 | Pressure sensor of packaging structure and preparation method thereof |
| US9926190B2 (en) * | 2016-01-21 | 2018-03-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS devices and methods of forming the same |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5591679A (en) * | 1995-04-12 | 1997-01-07 | Sensonor A/S | Sealed cavity arrangement method |
| CN1469100A (en) * | 2002-07-19 | 2004-01-21 | ���µ繤��ʽ���� | Mechanical shape variable detection sensor |
| CN1605560A (en) * | 2003-10-10 | 2005-04-13 | 森松诺尔公司 | Capacitive sensor |
| CN203719812U (en) * | 2014-03-05 | 2014-07-16 | 中国电子科技集团公司第三十八研究所 | Air pressure sensor and acceleration sensor integrated MEMS chip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08107219A (en) * | 1994-10-04 | 1996-04-23 | Seiko Instr Inc | Semiconductor acceleration sensor and its manufacture |
-
2014
- 2014-03-05 CN CN201410078551.XA patent/CN103792036B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5591679A (en) * | 1995-04-12 | 1997-01-07 | Sensonor A/S | Sealed cavity arrangement method |
| CN1469100A (en) * | 2002-07-19 | 2004-01-21 | ���µ繤��ʽ���� | Mechanical shape variable detection sensor |
| CN1605560A (en) * | 2003-10-10 | 2005-04-13 | 森松诺尔公司 | Capacitive sensor |
| CN203719812U (en) * | 2014-03-05 | 2014-07-16 | 中国电子科技集团公司第三十八研究所 | Air pressure sensor and acceleration sensor integrated MEMS chip |
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