CN103773626B - A kind of cleaning fluid of the removal photoresistance etch residues of low etching - Google Patents
A kind of cleaning fluid of the removal photoresistance etch residues of low etching Download PDFInfo
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- CN103773626B CN103773626B CN201210410184.XA CN201210410184A CN103773626B CN 103773626 B CN103773626 B CN 103773626B CN 201210410184 A CN201210410184 A CN 201210410184A CN 103773626 B CN103773626 B CN 103773626B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 57
- 238000005530 etching Methods 0.000 title claims abstract description 10
- 239000012530 fluid Substances 0.000 title abstract description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract description 26
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims abstract description 24
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229940074391 gallic acid Drugs 0.000 claims abstract description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229940079877 pyrogallol Drugs 0.000 claims abstract description 13
- 235000004515 gallic acid Nutrition 0.000 claims abstract description 12
- 150000002148 esters Chemical class 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- -1 alcohol amine Chemical class 0.000 claims description 18
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 8
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical group COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 4
- VFPFQHQNJCMNBZ-UHFFFAOYSA-N ethyl gallate Chemical compound CCOC(=O)C1=CC(O)=C(O)C(O)=C1 VFPFQHQNJCMNBZ-UHFFFAOYSA-N 0.000 claims description 4
- FBSFWRHWHYMIOG-UHFFFAOYSA-N methyl 3,4,5-trihydroxybenzoate Chemical compound COC(=O)C1=CC(O)=C(O)C(O)=C1 FBSFWRHWHYMIOG-UHFFFAOYSA-N 0.000 claims description 4
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical group COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 2
- RPWFJAMTCNSJKK-UHFFFAOYSA-N Dodecyl gallate Chemical compound CCCCCCCCCCCCOC(=O)C1=CC(O)=C(O)C(O)=C1 RPWFJAMTCNSJKK-UHFFFAOYSA-N 0.000 claims description 2
- 239000004262 Ethyl gallate Substances 0.000 claims description 2
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 2
- XOPOEBVTQYAOSV-UHFFFAOYSA-N butyl 3,4,5-trihydroxybenzoate Chemical compound CCCCOC(=O)C1=CC(O)=C(O)C(O)=C1 XOPOEBVTQYAOSV-UHFFFAOYSA-N 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- 235000010386 dodecyl gallate Nutrition 0.000 claims description 2
- 235000019277 ethyl gallate Nutrition 0.000 claims description 2
- 229940102253 isopropanolamine Drugs 0.000 claims description 2
- IBKQQKPQRYUGBJ-UHFFFAOYSA-N methyl gallate Natural products CC(=O)C1=CC(O)=C(O)C(O)=C1 IBKQQKPQRYUGBJ-UHFFFAOYSA-N 0.000 claims description 2
- 235000010387 octyl gallate Nutrition 0.000 claims description 2
- 239000000574 octyl gallate Substances 0.000 claims description 2
- NRPKURNSADTHLJ-UHFFFAOYSA-N octyl gallate Chemical compound CCCCCCCCOC(=O)C1=CC(O)=C(O)C(O)=C1 NRPKURNSADTHLJ-UHFFFAOYSA-N 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- NYUABOGYMWADSF-UHFFFAOYSA-N 5-methylbenzene-1,2,3-triol Chemical compound CC1=CC(O)=C(O)C(O)=C1 NYUABOGYMWADSF-UHFFFAOYSA-N 0.000 claims 1
- HCNISNCKPIVZDX-UHFFFAOYSA-N 5-tert-butylbenzene-1,2,3-triol Chemical compound CC(C)(C)C1=CC(O)=C(O)C(O)=C1 HCNISNCKPIVZDX-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 19
- 239000002184 metal Substances 0.000 abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000000203 mixture Substances 0.000 abstract description 4
- 239000004411 aluminium Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- ZZVUWRFHKOJYTH-UHFFFAOYSA-N diphenhydramine Chemical compound C=1C=CC=CC=1C(OCCN(C)C)C1=CC=CC=C1 ZZVUWRFHKOJYTH-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 16
- 238000005260 corrosion Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 10
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 229910052755 nonmetal Inorganic materials 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 150000002443 hydroxylamines Chemical class 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a kind of cleaning fluid and its composition for removing photoresistance etch residues.The cleaning fluid of the removal photoresistance etch residues of this low etching property contains（a）Hydramine,（b）Alcohol ether, (c) water, (d) pyrogallol and/or its derivative, e）Gallic acid and/or its ester.The cleaning fluid of the removal photoresistance etch residues of this low etching property can remove metal wire simultaneously（metal）, photoresistance residue on through hole (via) and metal gasket (Pad) wafer, do not attacked substantially simultaneously for base material such as metallic aluminium, nonmetallic silica etc..Had a good application prospect in fields such as cleaning semiconductor chips.
Description
Technical Field
The invention relates to a cleaning solution for removing photoresist etching residues.
Background
In the manufacture of semiconductor components, the application, exposure and imaging of photoresist layers are essential process steps for the patterning of the components. The residues of the resist material are removed completely before the next process step is performed at the end of the patterning, i.e. after coating, imaging, ion implantation and etching of the resist layer. Ion bombardment hardens the photoresist layer polymer during the doping step, thus making the photoresist layer less soluble and more difficult to remove. Heretofore, a two-step process (dry ashing and wet etching) has been generally used in the semiconductor manufacturing industry to remove this photoresist layer film. The first step is to remove most of the photoresist layer (PR) by dry ashing; the second step is to remove and clean the remaining photoresist layer by using a wet etching/cleaning process of the corrosion inhibitor composition, which is generally a cleaning solution cleaning/rinsing/drying process. In this process only the residual polymer resist layer and inorganic substances are removed and cannot attack the metal layer, e.g. the aluminium layer.
In the current wet cleaning process, the most used cleaning solution is a cleaning solution containing hydroxylamines and fluorine-containing substances, and typical patents of hydroxylamines cleaning solution include US6319885, US5672577, US6030932, US6825156, US5419779, and the like. Through continuous improvement, the corrosion rate of the solution to metal aluminum is greatly reduced, but the cleaning solution uses hydroxylamine which has the problems of single source, easy explosion and the like. Although the existing fluoride cleaning solution has great improvement, such as U.S. Pat. No. 5,972,862, U.S. Pat. No. 6,828,289, etc., the corrosion of metal and non-metal substrates cannot be well controlled, and the change of the characteristic dimension of the channel is easily caused after cleaning; on the other hand, wet cleaning equipment in some semiconductor enterprises is made of quartz, and the fluorine-containing cleaning solution corrodes the quartz and is corroded more rapidly along with the rise of temperature, so that the wide use of the equipment is influenced due to the incompatibility problem with the existing quartz equipment.
Although hydroxylamine and fluorine-containing cleaning solutions have been used relatively successfully in the semiconductor industry, due to their respective limitations and disadvantages, a third type of cleaning solution has been developed that does not contain either hydroxylamine or fluoride. For example, US5988186 discloses a cleaning solution containing a solvent, alcohol amine, water and gallic acid and esters thereof, which solves the problems of single source of hydroxylamine, safety and environmental protection, and unstable non-metal corrosion rate of fluorine-containing cleaning solutions. However, such cleaning solutions have limitations in their use due to their inclusion of neither hydroxylamine nor fluoride. Thus, despite the disclosure of some cleaning solution compositions, there is a need, and more recently, a need to prepare such cleaning solutions with a broader range of applications.
Disclosure of Invention
The invention aims to provide a low-cost semiconductor wafer cleaning solution capable of removing photoresist residues on a wafer, which does not contain hydroxylamine and fluoride; the corrosion rate to metal and nonmetal is low; and is compatible with quartz equipment.
The cleaning liquid of the present invention contains:
i. 40-70% of alcohol amine, preferably 50-65%;
alcohol ethers 10-40%, preferably 15-30%;
water 10-30%, preferably 15-25%;
0.1-10%, preferably 0.5-5%, of pyrogallol and its derivatives;
gallic acid and esters thereof, 0.1-5%, preferably 0.5-3%;
the contents are all mass percent contents, and the hydroxylamine and the fluoride are not contained.
In the present invention, the alcohol amine is preferably monoethanolamine, N-methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, ethyldiethanolamine, N-diethylethanolamine, N- (2-aminoethyl) ethanolamine and diglycolamine.
In the present invention, the alcohol ether is preferably diethylene glycol monoalkyl ether and dipropylene glycol monoalkyl ether. Wherein, the diethylene glycol monoalkyl ether is preferably diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether; the dipropylene glycol monoalkyl ether is preferably dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether. From the viewpoint of environmental protection of alcohol ether, the alcohol ether is preferably dipropylene glycol monoalkyl ether; the alcohol ether is more preferably dipropylene glycol monomethyl ether in terms of all alcohol ether efficiency for removing photoresist residues.
In the present invention, the pyrogallol and/or the derivative thereof is preferably one or more selected from the group consisting of pyrogallol, 5-methylphthalic triphenol, 5-methoxyphthalic triphenol, 5-t-butylphthalic triphenol and 5-hydroxymethylpyrogallol.
In the present invention, the gallic acid and/or its ester is preferably one or more selected from gallic acid, methyl gallate, ethyl gallate, butyl gallate, octyl gallate, lauryl gallate and 1-gallic acid glyceride.
The cleaning solution of the invention can clean the photoresist residues on the wafer at 50 ℃ to 80 ℃. The specific method comprises the following steps: and soaking the wafer containing the photoresist residues in the cleaning solution at 50-80 ℃ for a proper time, taking out, rinsing and drying by using high-purity nitrogen.
The invention has the technical effects that:
1) the cleaning solution disclosed by the invention can effectively remove light resistance residues on metal wires (metal), through holes (via) and metal pads (Pad) wafers and simultaneously realize the inhibition on the corrosion of metal aluminum and nonmetal by binary compounding of pyrogallol and derivatives thereof with gallic acid and esters thereof;
2) the cleaning solution solves the problems of single hydroxylamine source, high price, easy explosion and the like in the traditional hydroxylamine cleaning solution;
3) the cleaning liquid has low non-metal corrosion rate; solves the problem of unstable nonmetal corrosion rate of the traditional fluorine cleaning solution, and is compatible with the quartz cleaning tank commonly used by the current semiconductor manufacturers.
Detailed Description
The reagents and starting materials used in the present invention are commercially available. The cleaning fluid can be prepared by simply and uniformly mixing the components.
TABLE 1 compositions and amounts of cleaning solutions in the Examples (EXAMPLES)
TABLE 2 Components and contents of cleaning solutions in respective proportions
Effects of the embodiment
In order to further examine the cleaning condition of the cleaning liquid, the invention adopts the following technical means: respectively immersing a metal wire (metal) wafer, a via (via) wafer and a metal Pad (Pad) wafer containing photoresist residues into cleaning solution, oscillating for 10-30 minutes at 50-80 ℃ by using a constant temperature oscillator at a vibration frequency of about 60 revolutions per minute, rinsing, washing and drying by using high-purity nitrogen. The cleaning effect of the photoresist residue and the etching of the wafer by the cleaning solution are shown in table 2.
TABLE 3 part of the cleaning conditions of the wafers of the examples and comparative examples
As can be seen from Table 3, the cleaning solution of the present invention has good cleaning effect on metal line (metal) wafers, via (via) wafers and metal Pad (Pad) wafers containing photoresist residues, has a wide range of use temperature, and does not corrode metal aluminum and non-metal silicon dioxide. As can be seen from comparative example 1 and example 11, the photoresist residue on the wafer is not completely removed by using the commonly used dimethylsulfoxide solvent, and the removal of the photoresist residue is facilitated by using alcohol ether as the solvent. As can be seen from comparative example 2, comparative example 3 and example 11, in the case where other components are identical and the cleaning operation conditions are also identical, if pyrogallol and its derivatives are not added, the photoresist residue on the wafer is not completely removed; if gallic acid and its ester are not added, corrosion of metallic aluminum will occur. The two substances are added simultaneously, so that the photoresist residues on the wafer can be removed simultaneously, and the problem of metal aluminum can not be caused. It can be seen from comparative example 4 and example 11 that, in addition to being less environmentally friendly, the addition of conventional pyrocatechol causes corrosion of the metallic aluminium.
It should be understood that wt% in the present invention refers to mass percentage.
The embodiments of the present invention have been described in detail, but the embodiments are merely examples, and the present invention is not limited to the embodiments described above. Any equivalent modifications and substitutions to those skilled in the art are also within the scope of the present invention. Accordingly, equivalent changes and modifications made without departing from the spirit and scope of the present invention should be covered by the present invention.
Claims (9)
1. The cleaning solution for removing the photoresist etching residues with low etching is characterized by comprising alcohol amine, alcohol ether, pyrogallol and/or derivatives thereof, gallic acid and/or esters thereof and water;
wherein,
the alcohol amine accounts for 40-70 wt%, the alcohol ether accounts for 10-40 wt%, the pyrogallol and/or the derivative thereof accounts for 0.1-10 wt%, the gallic acid and/or the ester thereof accounts for 0.1-5 wt%, and the water accounts for 10-30 wt%.
2. The cleaning solution as set forth in claim 1, wherein: the alcohol amine accounts for 50-65 wt%, the alcohol ether accounts for 15-30 wt%, the pyrogallol and/or the derivative thereof accounts for 0.5-5 wt%, the gallic acid and/or the ester thereof accounts for 0.5-3 wt%, and the water accounts for 15-25 wt%.
3. The cleaning solution as set forth in claim 1, wherein: the alcohol amine is selected from one or more of monoethanolamine, N-methylethanolamine, diethanolamine, triethanolamine, isopropanolamine, ethyldiethanolamine, N-diethylethanolamine, N- (2-aminoethyl) ethanolamine and diglycolamine.
4. The cleaning solution as set forth in claim 1, wherein: the alcohol ether is selected from diethylene glycol monoalkyl ether and dipropylene glycol monoalkyl ether.
5. The cleaning solution as set forth in claim 4, wherein: the diethylene glycol monoalkyl ether is diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and/or diethylene glycol monobutyl ether; the dipropylene glycol monoalkyl ether is dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and/or dipropylene glycol monobutyl ether.
6. The cleaning solution as set forth in claim 4, wherein: the alcohol ether is dipropylene glycol monoalkyl ether.
7. The cleaning solution as set forth in claim 6, wherein: the alcohol ether is dipropylene glycol monomethyl ether.
8. The cleaning solution as set forth in claim 1, wherein: the pyrogallol and/or the derivative thereof is selected from one or more of pyrogallol, 5-methyl pyrogallol, 5-methoxy pyrogallol, 5-tert-butyl pyrogallol and 5-hydroxymethyl pyrogallol.
9. The cleaning solution as set forth in claim 1, wherein: the gallic acid and/or its ester is selected from one or more of gallic acid, methyl gallate, ethyl gallate, butyl gallate, octyl gallate, lauryl gallate and 1-gallic acid glyceride.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210410184.XA CN103773626B (en) | 2012-10-24 | 2012-10-24 | A kind of cleaning fluid of the removal photoresistance etch residues of low etching |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210410184.XA CN103773626B (en) | 2012-10-24 | 2012-10-24 | A kind of cleaning fluid of the removal photoresistance etch residues of low etching |
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| CN103773626B true CN103773626B (en) | 2018-01-12 |
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| CN105527803B (en) * | 2014-09-29 | 2020-08-18 | 安集微电子（上海）有限公司 | Photoresist cleaning solution |
| CN115895800A (en) * | 2022-12-14 | 2023-04-04 | 芯越微电子材料(嘉兴)有限公司 | Semi-aqueous wafer substrate cleaning solution composition and application method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101750913A (en) * | 2008-12-05 | 2010-06-23 | 安集微电子（上海）有限公司 | Cleaning solution for removing residues on photoresist layer |
| CN101750916B (en) * | 2008-12-17 | 2013-08-14 | 三星显示有限公司 | Composition for photoresist stripper and method of fabricating thin film transistor array substrate |
| CN101685273B (en) * | 2008-09-26 | 2014-06-04 | 安集微电子（上海）有限公司 | Cleanout fluid for removing photoresist layer residue |
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| KR20100062538A (en) * | 2008-12-02 | 2010-06-10 | 삼성전자주식회사 | Composition for photoresist stripper and method of fabricating thin film transistor array substrate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101685273B (en) * | 2008-09-26 | 2014-06-04 | 安集微电子（上海）有限公司 | Cleanout fluid for removing photoresist layer residue |
| CN101750913A (en) * | 2008-12-05 | 2010-06-23 | 安集微电子（上海）有限公司 | Cleaning solution for removing residues on photoresist layer |
| CN101750916B (en) * | 2008-12-17 | 2013-08-14 | 三星显示有限公司 | Composition for photoresist stripper and method of fabricating thin film transistor array substrate |
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