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CN103779430A - Conductive antireflection film of crystalline silicon solar cell and crystalline silicon solar cell - Google Patents

Conductive antireflection film of crystalline silicon solar cell and crystalline silicon solar cell Download PDF

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CN103779430A
CN103779430A CN201210416053.2A CN201210416053A CN103779430A CN 103779430 A CN103779430 A CN 103779430A CN 201210416053 A CN201210416053 A CN 201210416053A CN 103779430 A CN103779430 A CN 103779430A
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layer
conductive
solar cell
silicon solar
reflecting film
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谭伟华
廖辉
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Shanghai BYD Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The present invention provides a conductive antireflection film of a crystalline silicon solar cell. The conductive antireflection film is a structure having double functional layers, the functional layer close to a substrate of the crystalline silicon solar cell is a passivation layer, and the functional layer far away from the substrate of the crystalline silicon solar cell is a conductive layer. A conductive medium used for the conductive layer is at least one selected from AZO, ITO, ATO and SnO2. The present invention also provides the crystalline silicon solar cell using the conductive antireflection film. The conductive antireflection film provided by the present invention passivates a silicon face well, also can collect a photon-generated carrier generated by a PN junction effectively, so that the photon-generated carrier is composited to be restrained, and a light utilization rate is large. Meanwhile, the conductive layer also can connect a battery with a grid line of a smooth electrode effectively, so that the resistance of the electrode is distributed evenly, the series resistance of the battery is reduced, fill factors are increased substantially, and the photoelectric conversion efficiency of the battery is improved. In addition, the crystalline silicon solar cell provided by the present invention is simple in manufacture technology, and is suitable for the large-scale commercialized production.

Description

A kind of conductive anti-reflecting film of crystal-silicon solar cell and crystal-silicon solar cell
Technical field
The present invention relates to area of solar cell, more particularly, the crystal-silicon solar cell that the present invention relates to a kind of conductive anti-reflecting film of crystal-silicon solar cell and comprise this conductive anti-reflecting film.
Background technology
Solar energy is as a kind of green energy resource, inexhaustible, pollution-free with it, not be more and more subject to people's attention by the advantages such as region resource limitation.In order to improve the photoelectric conversion efficiency of crystal silicon solar energy battery, reduce the light reflection loss of battery surface, increase light transmission, the antireflective coating in solar battery structure plays very important effect.
The technique of industrialization is to adopt the silicon nitride film that deposits one deck suitable thickness on the silicon chip of Plasma Enhanced Chemical Vapor Deposition (PECVD) (PECVD) after diffusion completes on a large scale at present, this silicon nitride film layer, in having anti-reflective effect, also has certain passivation effect.By in the process of PECVD cvd nitride silicon thin film, after reacting gas ammonia and silane gas ionization, hydrogen ion is wherein combined with the dangling bonds of silicon face, forms surface passivation effect, thereby can effectively suppress the compound of photo-generated carrier, improve the photoelectric conversion efficiency of battery.But the antireflective rate of individual layer silicon nitride film is not also very low, still there is the space of improving.
Therefore, how further increasing the utilance of incident light, improve the photoelectric efficiency of battery, is a focus of current battery research.CN201120218873 discloses a kind of double-layer antireflection coating of crystalline silicon solar battery, and it is made up of titanium deoxid film and silicon nitride film passivation layer, and silicon nitride film is between titanium deoxid film and silicon chip; This double layer antireflection coating can reduce battery surface to reflection of light, and the reflectivity between spectral region 300 ~ 1200nm reduces by 10% left and right compared with uncoated.In the method, only reduce the reflectivity of incident light by double-deck reflectance coating, the effect promoting that reduces light reflection is very limited, adopts the electricity conversion of solar cell of this double-decker antireflective coating still lower.
CN201859880U provides a kind of solar cell with conductive anti-reflecting film, and the upper surface that it is included in solar cell body is provided with passivation layer, has a main electrode at the surperficial evaporation of passivation layer, then evaporation conductive anti-reflecting film around main electrode; Conductive anti-reflecting film is by bottom (TiO 2) and top layer (SiO 2or Al 2o 3) composition.This battery expects to replace by conductive anti-reflecting film the gate electrode of solar cell phototropic face, and conductive anti-reflecting film is also for collected current, thus the light-receiving area of increase battery.But because this conductive anti-reflecting film covers on passivation layer, passivating film is generally non-conductor, therefore in fact this conductive anti-reflecting film can not be collected photogenerated current at all.And the conductive effect of the conductive anti-reflecting film being made up of this type oxide is also also bad.
Summary of the invention
The present invention is directed to antireflective coating that crystal-silicon solar cell in prior art exists to the reflectivity of incident light reduce that degree is limited, still lower technical problem of the electricity conversion that causes battery, a kind of conductive anti-reflecting film of the crystal-silicon solar cell with new structure is provided and adopts the crystal-silicon solar cell of this conductive anti-reflecting film.
Particularly, technical scheme of the present invention is:
A conductive anti-reflecting film for crystal-silicon solar cell, described conductive anti-reflecting film is bifunctional layer structure, is wherein passivation layer near the functional layer of crystal-silicon solar cell silicon substrate, is conductive layer away from the functional layer of crystal-silicon solar cell silicon substrate; The conducting medium that described conductive layer adopts is selected from AZO(mixes the zinc oxide of aluminium), ITO(mixes the indium oxide of tin), ATO(mixes the tin oxide of antimony) or SnO 2at least one in (tin ash).
A kind of crystal-silicon solar cell, the phototropic face electrode that described crystal-silicon solar cell comprises silicon substrate, is positioned at the antireflection layer of silicon substrate phototropic face, is positioned at antireflection layer surface and contacts with silicon substrate through antireflection layer; Described antireflection layer is conductive anti-reflecting film provided by the invention.
The conductive anti-reflecting film of crystal-silicon solar cell provided by the invention, for bifunctional layer structure, conductive layer and passivation layer all have the antireflective effect to incident light, this double layer antireflection coating can carry out well passivated to silicon face on the one hand, can also effectively collect PN junction produce photo-generated carrier, make photo-generated carrier composite quilt suppress, light utilization efficiency is large; Conductive layer can also effectively connect the thin grid line of battery phototropic face electrode simultaneously, electrode resistance is evenly distributed, the series resistance that adopts the crystal-silicon solar cell of this conductive anti-reflecting film, fill factor, curve factor significantly increases, thereby the electricity conversion of battery is improved significantly.In addition, the manufacturing process of crystal-silicon solar cell provided by the invention is simple, and the extra cost increasing is little, is applicable to large-scale commercial and produces.
Accompanying drawing explanation
Fig. 1 is the structural representation of crystal-silicon solar cell provided by the invention.
In figure: 1---conductive layer, 2---passivation layer, 3---phototropic face electrode, 4---silicon substrate, 5---back surface field, 6---backplate.
Embodiment
The invention provides a kind of conductive anti-reflecting film of crystal-silicon solar cell, described conductive anti-reflecting film is bifunctional layer structure, being wherein passivation layer near the functional layer of crystal-silicon solar cell silicon substrate, is conductive layer away from the functional layer of crystal-silicon solar cell silicon substrate; The conducting medium that described conductive layer adopts is selected from AZO, ITO, ATO or SnO 2in at least one.
Although CN201120218873 discloses a kind of double-layer antireflection coating of crystalline silicon solar battery, its titanium dioxide layer and silicon nitride film layer are all for reducing penetrating reflection of light, be that it only further reduces reflection by duplicature, and each layer of antireflective coating performance do not improved in essence; And the conducting film (SiO that CN201859880U provides 2or Al 2o 3) cover passivation layer (TiO 2) on, conducting film does not contact with silicon chip, and this passivating film is as non-conductor.The battery of this invention is without thin grid line, and in fact, simple main grid line can not effectively be collected photo-generated carrier, and therefore, the improved efficiency of battery is limited.
The conductive anti-reflecting film of crystal-silicon solar cell provided by the invention, its structure is bifunctional layer structure, is passivation layer near the functional layer (being designated as bottom) of silicon substrate; Functional layer (being designated as top layer) away from silicon substrate is conductive layer.Conductive layer and passivation layer all have incident light are had to antireflective effect, this double layer antireflection coating can carry out well passivated to silicon face on the one hand, minimizing or inhibition photo-generated carrier are compound silicon chip surface, can also more effectively collect the photo-generated carrier that PN junction produces, the collection probability that makes charge carrier increases, therefore light utilization efficiency increases large; Simultaneously, conductive layer (top layer) in antireflective coating can also effectively couple together the thin grid line of battery phototropic face electrode, photogenerated current is collected and collected to main grid, electrode resistance is evenly distributed, series resistance, fill factor, curve factor significantly increases, thereby the electricity conversion of battery is improved significantly.
Adopt the solar cell of this conductive anti-reflecting film, top layer (being conductive layer) is for accepting illumination layer.The material of the present invention to the conducting medium adopting in top layer, selects by great many of experiments, finally finds, adopts AZO(to mix the zinc oxide of aluminium), ITO(mixes the indium oxide of tin), ATO(mixes the tin oxide of antimony) or SnO 2at least one in (tin ash) is during as conducting medium, and the conductive layer that such material forms is little to incident reflection of light, and it has good conductivity simultaneously.
In the present invention, the thickness of described conductive layer can suitably be selected according to kind and the thickness of bottom (being passivation layer) material, its selection principle is to guarantee that passivation layer is superimposed with the bifunctional layer that conductive layer forms, the reflectivity minimum of conductive anti-reflecting film to incident light.In addition, conductive layer (top layer) also can adopt two or more conducting medium, as adopted AZO and SnO 2two kinds of combinations, as conductive layer, are first prepared one deck AZO, then on AZO, prepare one deck SnO 2, generally, the anti-reflective effect that adopts the conductive layer that two kinds of conducting mediums are combined to form is better than individual layer, but its complicated process of preparation, cost can increase considerably, and therefore, preferably adopts single conducting medium layer.
Therefore,, in the present invention, under preferable case, described conductive layer can directly adopt individual layer AZO.Inventor's discovery, the raw material source that forms AZO conductive film layer is relatively abundant, and its environmental pollution is little, and the electric conductivity of film is better, and the optical property matching of passivation layer is good, and the preparation technology of this film is simple, ripe.
In conductive anti-reflecting film of the present invention, the thickness of conductive layer is 20 ~ 80nm, its concrete thickness can be determined according to the kind of conducting medium and passivation layer medium kind and thickness, its design principle is the light reflectivity minimum that makes whole antireflective coating, and the conductance of conductive layer is large as far as possible.
The preparation method of described conductive layer can adopt magnetron sputtering method conventional in prior art, pulsed laser deposition (PLD) method, sol-gel (Sol-Gel) method or chemical vapor deposition (CVD) method.Preferably adopt magnetron sputtering method, because the method deposition rate is high, substrate temperature is low, and film forming adhesiveness is good, and cost is low, easily controls.The target of magnetron sputtering is alloy or the pure-oxide of corresponding plating material, and the concrete technology that target forms conductive oxide at magnetron sputtering is that film preparation personnel are known.For example, take deposition AZO conductive layer as example, target when magnetron sputtering can adopt Zn-Al metallic target, adopt dioxygen oxidation, and pass into argon-dilution, and control sputtering pressure is 0.5 ~ 1.0Pa, argon flow amount is 10 ~ 30sccm, silicon substrate temperature is 200 ~ 300 ℃, and sputtering time can be determined according to the required height that deposits to the AZO film on silicon chip.
In the present invention, described passivation layer can adopt passivation layer conventional in prior art.Under preferable case, in the present invention, the dielectric passivation that described passivation layer adopts is SiO 2or Si 3n 4.Described passivation layer can play good passivation to surface of silicon on the one hand, also incident light is had to antireflective effect simultaneously.
Particularly, in the present invention, if passivation layer adopts SiO 2as dielectric passivation, it can form by thermal oxidation or vacuum vapour deposition preparation.The method technique of thermal oxidation is simple, and equipment cost is few, therefore preferably adopts thermal oxidation technology.In thermal oxidation process, the unsaturated silicon atom of a large amount of oxygen atoms and surface of silicon combines and forms one deck SiO 2film, thus the density of reduction dangling bonds can be controlled interface trap and fixed charge well, reduces surface density of states, plays surface passivation effect.Particularly; the step that surface of silicon passivation is formed to passivation layer comprises: the silicon chip substrate after making herbs into wool, diffusion, etching, dephosphorization silex glass is put into oxygen atmosphere and carry out thermal oxidation; pass into protective gas nitrogen at oxidation stage simultaneously; oxidizing temperature is set to 800 ~ 850 ℃, and oxidization time is according to the required SiO obtaining 2the thickness of film and determining, general control is between 100 ~ 500s.
Due to SiO 2passivation effect be generally better than silicon nitride, therefore, in the present invention, the dielectric passivation that passivation layer adopts is preferably SiO 2.And the thermal oxidation of silicon chip substrate can two-sidedly be carried out, the shady face of the silicon chip that do not need protection, the silicon dioxide that shady face obtains has the effect of passivated surface equally, useful equally to suppressing the surperficial photo-generated carrier of the back of the body.Further, in the present invention, the dielectric passivation that described passivation layer adopts is SiO 2time, the thickness of passivation layer is 5 ~ 20nm.Passivation layer thickness is too little can the passivation effect of impact to silicon chip surface, can increase too greatly the time that forms passivation layer, and high temperature causes the doping redistribution in silicon chip and affects the quality of silicon chip, thereby cause the V of battery ocand I sCstream all has decline.
The dielectric passivation adopting in passivation layer also can be silicon nitride.While adopting silicon nitride as dielectric passivation, the thickness of corresponding passivation layer is between 15 ~ 60 nm, and this is because the passivation of silicon nitride is weaker than SiO 2, and the temperature of its deposition is low, and therefore it selects thickness can be greater than SiO 2.The PASSIVATION MECHANISM of silicon nitride is that those skilled in the art are known, repeats no more herein.The preparation method who forms silicon nitride passivation can adopt chemical vapour deposition (CVD) (PECVD) method, and its concrete technology is conventionally known to one of skill in the art.
The present invention also provides a kind of crystal-silicon solar cell that adopts this conductive anti-reflecting film, its structure as shown in Figure 1, specifically comprises silicon substrate 4, is positioned at the antireflection layer of silicon substrate 4 phototropic faces, the phototropic face electrode 3 that is positioned at antireflection layer surface and contacts with silicon substrate through antireflection layer; Described antireflection layer is conductive anti-reflecting film provided by the invention, comprises conductive layer 1 and passivation layer 2, and wherein conductive layer 1 is away from silicon substrate 4, and passivation layer 2 is near silicon substrate 4.
As those skilled in the art's common practise, described silicon substrate 4 back sides are also provided with back surface field 5 and backplate 6, and backplate 6 contacts with silicon substrate 4 back sides through back surface field 5, as shown in Figure 1.
After tested, adopt the average light electrical efficiency of 156 × 156 polycrystalline solar cells that conductive anti-reflecting film provided by the invention prepares to improve more than 0.15%.In addition, the manufacturing process of crystal-silicon solar cell provided by the invention is simple, and the extra cost increasing is little, is applicable to large-scale commercial and produces.
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Embodiment 1
(1) silicon chip obtaining after 156 × 156 P type polysilicon making herbs into wool, diffusion, etching, dephosphorization silex glass is put into oxygen atmosphere and carry out Double-side hot oxidation, the temperature setting in oxidation furnace is set to 820 ℃, and oxidization time is 312s, the SiO obtaining 2the thickness of passivation layer is that the probe-type step instrument that 11.5 ± 0.1nm(is produced by Ambious Technology Inc company of the U.S. is measured, lower same).
(2) silicon chip step (1) being obtained is placed on the slide holder of magnetically controlled DC sputtering machine fixing, then put it in sputtering chamber, to be fixed in advance in chamber Zn-Al(Al content as 3wt%) metal targets carries out sputter, sputtering chamber door closes, chamber is vacuumized, it is 0.6Pa that sputtering pressure is set, silicon chip substrate temperature is 250 ℃, oxygen and argon flow amount (measure with volume flow mL/min, lower same) than being 10:40, sputtering power is 55W, sputtering time is 1920s, obtain AZO conductive layer, testing its thickness is 67.5 ± 0.1nm.
(3) silicon chip step (2) being obtained adopts 200 order silk screen printing back silver electrocondution slurries, and (model is the PV505 of Du Pont, three eight sections, line systems, printing weight in wet base is 35 ~ 50 mg), (model is large standing grain 108C to adopt 280 order silk screen printing back field aluminum paste material again, printing weight in wet base is 1.4 ~ 1.6g), dry, bake out temperature is 150 ℃, drying time is 5 minutes, then adopt 360 orders, live width is 40 μ m, wire diameter is 16 μ m, thickness is that (model is the 17A of Du Pont for the screen painting front side silver paste of 5 μ m, printing weight in wet base is 120 ~ 130mg), the crystal-silicon solar cell of the present embodiment obtaining after sintering, be designated as S1.
Embodiment 2
Adopt the step identical with embodiment 1 to prepare the crystal-silicon solar cell S2 of the present embodiment, difference is:
In step (1), the temperature setting in oxidation furnace is set to 850 ℃, and oxidization time is 480s, the SiO obtaining 2the thickness of passivation layer is 18.4 ± 0.1nm;
In step (2), sputtering time is 1680 s, and the thickness of the AZO conductive layer obtaining is 61.3 ± 0.1nm.
By above-mentioned steps, obtain the crystal-silicon solar cell S2 of the present embodiment.
Embodiment 3
(1) silicon chip obtaining after 156 × 156 P type polysilicon making herbs into wool, diffusion, etching, dephosphorization silex glass being put into PECVD stove deposits, vacuum degree pressure is 25Pa, depositing temperature is 440 ℃, the flow-rate ratio of ammonia and silane gas is 2786:214, power when deposition is 2900W, sedimentation time is 253s, obtains silicon nitride passivation, and testing its thickness is 45 ± 0.1nm.
(2) adopt the step identical with embodiment 1 step (2) at passivation layer surface depositing conducting layer, difference is: sputtering time is 1146s, and the thickness of the AZO conductive layer obtaining is 40.7 ± 0.1nm.
(3) adopt the step identical with embodiment 1 step (3) print electrode slurry and back-surface-field (BSF) paste, oven dry sintering, obtains the crystal-silicon solar cell of the present embodiment, is designated as S3.
Embodiment 4
(1) adopt the step identical with embodiment 1 step (1) to form SiO in surface of silicon 2passivation layer.
(2) silicon chip step (1) being obtained is placed on the slide holder of magnetically controlled DC sputtering machine fixing, then putting it in sputtering chamber, to be fixed in advance in chamber In-Sn(Sn content as 5.0wt%) metal targets carries out sputter, and sputtering chamber door closes, chamber is vacuumized, it is 0.6Pa that sputtering pressure is set, and underlayer temperature is 250 ℃, the flow-rate ratio 15:42 of oxygen and argon gas, sputtering power is 75W, sputtering time is 2350s, obtains ITO conductive layer, and testing its thickness is 72.4 ± 0.1nm.
(3) adopt the step identical with embodiment 1 step (3) print electrode slurry and back-surface-field (BSF) paste, oven dry sintering, obtains the crystal-silicon solar cell of the present embodiment, is designated as S4.
Embodiment 5
(1) adopt the step identical with embodiment 1 step (1) to form SiO in surface of silicon 2passivation layer.
(2) silicon chip step (1) being obtained is placed on the slide holder of magnetically controlled DC sputtering machine fixing, then puts it in sputtering chamber, to be fixed in advance SnO in chamber 2oxide target material carries out sputter, and the sputtering chamber door that closes, vacuumizes chamber, and it is 0.4Pa that sputtering pressure is set, and underlayer temperature is 200 ℃, and sputtering power is 90W, and sputtering time is 1850s, obtains SnO 2conductive layer, test SnO 2conductive layer thickness is 52.5 ± 0.1nm.
(3) adopt the step identical with embodiment 1 step (3) print electrode slurry and back-surface-field (BSF) paste, oven dry sintering, obtains the crystal-silicon solar cell of the present embodiment, is designated as S5.
Embodiment 6
(1) adopt the step identical with embodiment 1 step (1) to form SiO in surface of silicon 2passivation layer.
(2) silicon chip step (1) being obtained is placed on the slide holder of magnetically controlled DC sputtering machine fixing, then put it in sputtering chamber, to be fixed in advance in chamber Zn-Al(Al content as 3wt%) metal targets carries out sputter, sputtering chamber door closes, chamber is vacuumized, it is 0.6Pa that sputtering pressure is set, silicon chip substrate temperature is 250 ℃, oxygen and argon flow amount (measure with volume flow mL/min, lower same) than being 10:40, sputtering power is 55W, sputtering time is 1100s, obtain AZO conductive layer, testing its thickness is 32.4 ± 0.1nm.
(3) silicon chip with AZO conductive layer step (2) being obtained is reentered in sputtering chamber, to be fixed in advance SnO in chamber 2oxide target material carries out sputter, and the sputtering chamber door that closes, vacuumizes chamber, and it is 0.4Pa that sputtering pressure is set, and underlayer temperature is 200 ℃, and sputtering power is 65W, and sputtering time is 950s, obtains covering the SnO on AZO layer 2conductive layer, test SnO 2conductive layer thickness is 26.1 ± 0.1nm.
What the present embodiment obtained has AZO and SnO 2the common thickness of the conducting function layer of two conducting mediums is 58.5 ± 0.2nm.
(4) adopt the step identical with embodiment 1 step (3) print electrode slurry and back-surface-field (BSF) paste, oven dry sintering, obtains the crystal-silicon solar cell of the present embodiment, is designated as S6.
Comparative example 1
(1) silicon chip obtaining after 156 × 156 P type polysilicon making herbs into wool, diffusion, etching, dephosphorization silex glass being put into PECVD stove deposits, vacuum degree pressure is 25Pa, depositing temperature is 440 ℃, the flow-rate ratio of ammonia and silane gas is 2786:214, power when deposition is 2900W, sedimentation time is 450s, obtains silicon nitride antireflection layer, and testing its thickness is 76.8 ± 0.1nm.
(3) adopt the step identical with embodiment 1 step (3) print electrode slurry and back-surface-field (BSF) paste, oven dry sintering, obtains the crystal-silicon solar cell of this comparative example, is designated as DS1.
Comparative example 2
Adopt the titanium deoxid film that the disclosed step of embodiment in CN201120218873 is 42nm at 156 × 156 P type polysilicon chip surface silicon nitride films that deposit thickness is 45nm successively and thickness, then adopt the step identical with embodiment 1 step (3) print electrode slurry and back-surface-field (BSF) paste, dry sintering, the crystal-silicon solar cell that obtains this comparative example, is designated as DS2.
Comparative example 3
The silicon chip obtaining after 156 × 156 P type polysilicon making herbs into wool, diffusion, etching, dephosphorization silex glass is placed on the slide holder of magnetically controlled DC sputtering machine fixing, then put it in sputtering chamber, in corresponding crucible, fill respectively titanium dioxide and silicon dioxide, shut door for vacuum chamber and vent valve, first take out low vacuum, then pumping high vacuum; Select the crucible of titanium dioxide, open scanning, gun filament, high pressure and line, regulate electronic beam current, adjust facula position, make the abundant melting of titanium dioxide in crucible, adjust tabula rasa position and make to drop on Gan Guo center, regulate electronic beam current to make titanium dioxide steady-state evaporation, open oxygen fill valve, open baffle plate and evaporate titanium dioxide; After evaporating, titanium dioxide continues oxygenation, select the crucible of silicon dioxide, open baffle plate and continue evaporation, after silicon dioxide evaporates, continue oxygenation, finally close the open air valve of oxygenation vacuum chamber is inflated, obtain showing to have the silicon chip of passivation layer and conductive anti-reflecting film, after taking-up, in main electrode of conductive anti-reflecting film surface printing, back up back surface field and backplate, dry sintering, the crystal-silicon solar cell that obtains this comparative example, is designated as DS3.
Performance test
Surface appearance: adopt 3 ~ 5 times of magnifying glasses to observe the crystal-silicon solar cell S1-S6 of above-mentioned preparation and whether the antireflective coating color of DS1-DS3 is even, have or not obvious aberration, observe surface whether smooth etc.If without obviously aberration, smooth surface are designated as OK, otherwise are designated as NG.
Series resistance, fill factor, curve factor and electricity conversion: adopt single flash operation simulation test instrument to test crystal-silicon solar cell sample S1-S6 and the DS1-DS3 of above-mentioned preparation.Test condition is standard test condition (STC): light intensity: 1000W/m 2; Spectrum: AM1.5; Temperature: 25 ℃.The unit of series resistance is m Ω.
Test result is as shown in table 1.
Table 1
Figure 2012104160532100002DEST_PATH_IMAGE002
。
Relatively can find out from the test result of upper table 1, adopt the volume resistance of the phototropic face electrode of the crystal-silicon solar cell that conductive anti-reflecting film provided by the invention prepares to be evenly distributed, the series resistance of battery, fill factor, curve factor significantly increases, and cell photoelectric conversion efficiency is improved; Multiparity line experimental results show that: the average light electrical efficiency of 156 × 156 polycrystal silicon cells improves more than 0.15%.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.

Claims (12)

1. the conductive anti-reflecting film of a crystal-silicon solar cell, it is characterized in that, described conductive anti-reflecting film is bifunctional layer structure, is wherein passivation layer near the functional layer of crystal-silicon solar cell silicon substrate, is conductive layer away from the functional layer of crystal-silicon solar cell silicon substrate; The conducting medium that described conductive layer adopts is selected from AZO, ITO, ATO or SnO 2in at least one.
2. conductive anti-reflecting film according to claim 1, is characterized in that, the conducting medium that described conductive layer adopts is AZO.
3. conductive anti-reflecting film according to claim 1, is characterized in that, described conductive layer is double-decker, and the conducting medium wherein adopting near one deck of passivation layer is AZO, and the conducting medium adopting away from one deck of passivation layer is SnO 2.
4. conductive anti-reflecting film according to claim 1, is characterized in that, the thickness of described conductive layer is 20 ~ 80nm.
5. according to the conductive anti-reflecting film described in claim 1-3 any one, it is characterized in that, described conductive layer forms by magnetron sputtering method, pulsed laser deposition, sol-gel process or chemical vapour deposition technique preparation.
6. conductive anti-reflecting film according to claim 1, is characterized in that, the dielectric passivation that described passivation layer adopts is SiO 2or Si 3n 4.
7. conductive anti-reflecting film according to claim 6, is characterized in that, the dielectric passivation that described passivation layer adopts is SiO 2, the thickness of passivation layer is 5 ~ 20nm.
8. conductive anti-reflecting film according to claim 7, is characterized in that, described passivation layer forms by thermal oxidation or vacuum vapour deposition preparation.
9. conductive anti-reflecting film according to claim 6, is characterized in that, the dielectric passivation that described passivation layer adopts is Si 3n 4, the thickness of passivation layer is 15 ~ 60nm.
10. conductive anti-reflecting film according to claim 6, is characterized in that, described passivation layer is prepared formation by Plasma Enhanced Chemical Vapor Deposition (PECVD).
11. 1 kinds of crystal-silicon solar cells, is characterized in that, the phototropic face electrode that described crystal-silicon solar cell comprises silicon substrate, is positioned at the antireflection layer of silicon substrate phototropic face, is positioned at antireflection layer surface and contacts with silicon substrate through antireflection layer; Described antireflection layer is the conductive anti-reflecting film described in claim 1-10 any one.
12. crystal-silicon solar cells according to claim 11, is characterized in that, the described silicon substrate back side is also provided with back surface field and backplate, and backplate contacts with the silicon substrate back side through back surface field.
CN201210416053.2A 2012-10-26 2012-10-26 Conductive antireflection film of crystalline silicon solar cell and crystalline silicon solar cell Pending CN103779430A (en)

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