CN103760635A - Glass base three-dimension photoelectricity simultaneous transmitting device and manufacturing method thereof - Google Patents
Glass base three-dimension photoelectricity simultaneous transmitting device and manufacturing method thereof Download PDFInfo
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Abstract
The invention discloses a glass base three-dimension photoelectricity simultaneous transmitting device and a manufacturing method of the glass base three-dimension photoelectricity simultaneous transmitting device which comprises a photoelectricity simultaneous transmitting device glass substrate. A copper layer, a horizontal waveguide layer and a covering layer are sequentially arranged on the glass substrate. A vertical light through hole and a vertical glass through hole are vertically formed in the glass substrate. An RDL image is distributed on the copper layer and a core layer in the vertical light through hole is connected with the horizontal waveguide layer to be a whole. A photoelectricity mutual-connection hole and a del-shaped reflector are arranged on the horizontal waveguide layer. The covering layer is provided with an opening. The photoelectricity mutual-connection hole and the opening are electroplated with metal. The manufacturing method mainly comprises the following steps of manufacturing the vertical glass through hole and the vertical light through hole in the glass substrate, evaporating a copper layer, coating the horizontal waveguide layer in a rotation mode, manufacturing the photoelectricity mutual-connection hole and the reflector, and manufacturing the covering layer. According to the glass base three-dimension photoelectricity simultaneous transmitting device and the manufacturing method of the glass base three-dimension photoelectricity simultaneous transmitting device, horizontal light mutual-connection and vertical mutual-connection of the optical waveguide, electricity mutual-connection in the vertical direction and the horizontal direction and mutual transmission of light and electricity can be achieved on the same glass substrate, the manufacturing technology is simple and cost is low.
Description
Technical field
The present invention relates to integrated electronic technical field, particularly a kind of three-dimensional photoelectricity simultaneous interpretation device and preparation method thereof.
Background technology
Existing integrated circuit mostly is two-dimentional integrated circuit, and two station integrated circuits refer to by the distribution side by side of the various components and parts of integrated circuit in one plane.Along with integrated level improves constantly, the device cell quantity on every sharply increases, and chip area increases, and between unit, the growth of line not only affects circuit working speed but also takies a lot of areas, has a strong impact on integrated circuit and further improves integrated level and operating rate.So produce three-dimensional integrated new technology thinking.Three dimensional integrated circuits multilayer device overlay structure can significantly improve chip integration, and overlay structure shortens unit line, and makes parallel signal be treated as possibility, thereby realizes the high speed operation of circuit, has plurality of advantages; But due to the design of multilayer circuit, there is more complicated electrical interconnection conduction, will inevitably be at the technical barrier that occurs being difficult to overcome aspect limit bandwidth, electromagnetic interference (EMI), delay, energy consumption, make the processing speed that the growth rate of input information output cannot match information.Light interconnection technique has great bandwidth resources and the information that can realize is easily intersected and multiplexing advantage, can make single transmission channel realize the transmission of mass data, and independent of one another between different channels light signal, there will not be and intersect and crosstalk phenomenon, be therefore the desirable technique that substitutes electrical interconnection.The current application in light interconnection technique, mostly be that the horizon light waveguide of passing through being embodied in based on silica-based interposer realizes the two dimension interconnection of optical signalling and passes through the research of the photoelectricity perpendicular interconnection of vertical light waveguide and the integrated manufacture of TSV, and due to the characteristic of semiconductor of silica-based interposer itself, in transmit high-speed signals, have that loss is large, the problem such as serious of crosstalking.
In addition, even if adopt light interconnection technique, because the surface of wiring board needs welding electronic component, therefore wiring board also needs to consider the factor of light signal switching electrical signals and electric signal transmitting photo-signal in design process.For the mutual teach skill art of photoelectricity, in the integrated middle application of three-dimensional, be only to separate integrated mode based on light interposer and electric interposer at present, cannot realize the real fusion that three-dimensional integrated middle photoelectricity passes mutually.
Summary of the invention
The technical matters that the present invention solves be to provide a kind of three-dimensional integrated in photoelectricity based on glass interposer pass mutually device and method for making, to realize between the horizon light interconnection of optical waveguide and the electrical interconnection of perpendicular interconnection, vertical direction and horizontal direction and photoelectricity the object of conduction mutually in same packaging body.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows.
The three-dimensional photoelectricity simultaneous interpretation of glass-based device, comprises glass substrate, is disposed with copper layer, horizontal wave conducting shell and top covering on described glass substrate; On described glass substrate, be vertically installed with vertical light through hole and the vertical glass through hole being communicated with copper layer, on described copper layer, be laid with RDL figure, sandwich layer and horizontal wave conducting shell in described vertical light through hole are connected as a single entity, the del catoptron that is provided with photovoltaic interconnects hole and corresponding vertical light through hole lateral wall on described horizontal wave conducting shell, is provided with the opening being communicated with photovoltaic interconnects hole on described top covering; Described photovoltaic interconnects hole and opening are electroplate with copper liquid.
The method for making of the three-dimensional photoelectricity simultaneous interpretation of glass-based device, mainly comprises the following steps: first on glass substrate, by etch process, manufacture vertical light through hole and vertical glass through hole; Secondly in vertical glass through hole, fill waveguide material and electrical interconnection material, above glass substrate, arrange RDL figure copper steam-plating layer; Then by whirl coating or spraying and exposure technology, complete the making of vertical light through hole sandwich layer and horizontal wave conducting shell; The last interconnection that forms metal RDL layer above horizontal wave conducting shell.
The method for making of the three-dimensional photoelectricity simultaneous interpretation of glass-based device, specifically comprises the following steps:
The first step, at the some through holes perpendicular to glass substrate of the positive etching of glass substrate, through hole comprises vertical glass through hole and the vertical light through hole of finished product;
Second step, coating dry film is as photoresist, and the dry film place above the through hole of corresponding vertical light through hole carries out photoetching and forms through hole;
The 3rd step after dry film photoetching development, is filled waveguide material formation surrounding layer in exposed vertical light through hole;
The 4th step, peels off dry film;
The 5th step adopts PVD or ALD deposition techniques dielectric layer on the sidewall of vertical glass through hole;
The 6th step, fills to electro-coppering in vertical glass through hole, and annealing;
The 7th step, above glass substrate, spin coating photoresist or dry film are as mask;
The 8th step, photoetching on mask, development, post bake, form RDL figure, and retain the mask of vertical light through hole top;
The 9th step, evaporation one deck underlying metal in RDL figure, then on underlying metal, sputter copper forms copper layer;
The tenth step, removes photoresist or dry film, retains RDL figure, removes unnecessary metal;
The 11 step, spin coating waveguide material, and fill waveguide material or adopt the silicon dioxide of PECVD dopant deposition germanium to form horizontal wave conducting shell at RDL upper surface;
The 12 step, horizontal wave conducting shell etching form photovoltaic interconnects hole, and on the horizontal wave conducting shell above corresponding vertical light through hole lateral wall etching del catoptron;
The 13 step, to the electro-coppering of photovoltaic interconnects hole;
The 14 step, above horizontal wave conducting shell, the photosensitive PI material of spin coating is made top covering, and photoetching, development on top covering, solidifies and offer opening;
The 15 step is electroplated and is formed UBM in the opening of top covering;
The 16 step, repeats the 7th step to the 15 steps at the glass substrate back side, complete.
Described in the present invention's the 5th step, dielectric layer comprises the diffusion impervious layer, adhesion layer and the Seed Layer that from glass substrate, upwards set gradually, the preferred TiN/Ti/Cu combination of diffusion impervious layer, adhesion layer and Seed Layer, and thickness is got 200nm/200nm/1000nm.
Del catoptron described in the present invention's the 12 step obtains the del waveguide shapes needing, the equilateral triangle that is shaped as handstand of del catoptron by exposing, develop, solidifying.
Owing to having adopted above technical scheme, the invention technological progress is as follows.
The present invention manufactures when can complete horizon light waveguide and vertical light waveguide in glass interposer, in same packaging body, realized the object of mutually conducting between the horizon light interconnection of optical waveguide and the electrical interconnection of perpendicular interconnection, vertical direction and horizontal direction and photoelectricity, manufacture craft is simple, with low cost.
The photoelectricity simultaneous interpretation device that adopts the present invention to make, have the following advantages: one, reduced encapsulation level, a large amount of can only be with sheet under traditional integration mode between the logic interconnection realized of communication mode can become in sheet and interconnect, significantly reduction pin size, improves integrated level; Its two, the integrated permission of three-dimensional photoelectricity is carried out space wiring in three-dimensional mode to circuit, light path module, thereby significantly shortens wire length on sheet, improves transmission speed and reduces power consumption; They are three years old, adopt glass as interposer, because glass is insulator, less with respect to silica-based interposer loss, can support more electricity interlinkage at a high speed, and glass interposer self can be used as under-clad layer, reduced under-clad layer operation, also can adopt the silicon dioxide of doped germanium as horizontal wave conducting shell, the design of compatible more optical planar circuit.The glass interposer that simultaneously can directly ground floor RDL be made is upper, has improved work efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of photoelectricity simultaneous interpretation device of the present invention.
Fig. 2 is the process chart that the present invention makes photoelectricity simultaneous interpretation device.
Wherein: 1. glass substrate, 2. dry film, 3. dielectric layer, 4. copper layer, 5. horizontal wave conducting shell, 6. top covering, 7. vertical glass through hole, 9. vertical light through hole, 10.RDL figure, 11. photovoltaic interconnects holes, 12. openings, 13. catoptrons, 14. photoresists.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further elaborated.
The three-dimensional photoelectricity simultaneous interpretation of a kind of glass-based device, comprises glass substrate 1, is disposed with copper layer 4, horizontal wave conducting shell 5 and top covering 6 on described glass substrate 1; On described glass substrate 1, be vertically installed with vertical light through hole 9 and the vertical glass through hole 7 being communicated with copper layer 4, on described copper layer, be laid with RDL figure 10, sandwich layer and horizontal wave conducting shell in described vertical light through hole are connected as a single entity, the del catoptron 13 that is provided with photovoltaic interconnects hole 11 and corresponding vertical light through hole 9 lateral walls on described horizontal wave conducting shell 5, is provided with the opening 12 being communicated with photovoltaic interconnects hole 11 on described top covering; Described photovoltaic interconnects hole 11 and opening 12 are electroplate with copper liquid.
The method for making of the three-dimensional photoelectricity simultaneous interpretation of above-mentioned glass-based device, is mainly included in the step of making vertical glass through hole, vertical light through hole, copper steam-plating layer, spin coating horizontal wave conducting shell, making photovoltaic interconnects hole and catoptron, making top covering on glass substrate.First on glass substrate, by etch process, manufacture vertical light through hole and vertical glass through hole; Secondly in vertical glass through hole, fill waveguide material and electrical interconnection material, above glass substrate, arrange RDL figure copper steam-plating layer; Then by whirl coating or spraying and exposure technology, complete the making of vertical light through hole sandwich layer and horizontal wave conducting shell; The last interconnection that forms metal RDL layer above horizontal wave conducting shell.
Because glass interposer exists two-sided interconnection process, the present invention only sets forth for one side technique, and the one side technique of another side has identical structure and preparation method, repeats no more.One side process chart as shown in Figure 2, specifically comprises the following steps:
The first step forms some through holes perpendicular to glass substrate by etching on glass substrate 1, and through hole comprises vertical glass through hole 7 and the vertical light through hole 9 of finished product.
The aperture of through hole is relevant with the thickness of glass substrate.Generally, the aperture depth-to-width ratio of vertical glass via etch is 10:1 or 5:1, and the diameter of vertical light through hole can be different with vertical glass through-hole diameter, depends on the optical mode design of light through hole transmission.Take the aperture depth-to-width ratio 5:1 of the thick glass interposer of 100 μ m, vertical glass through hole as example, the pore size of vertical glass through hole is 20 μ m.
Be arranged side by side in the present embodiment four through holes, wherein three, the left side is vertical glass through hole, and the rightmost side is vertical light through hole.The etching of through hole can adopt dry etching, such as DRIE etc., also can adopt excimer laser or femtosecond laser etching, and wide-aperture through hole can adopt mechanical means to make.
Second step, coating dry film 2 is as photoresist, and the dry film place above the through hole of corresponding vertical light through hole carries out photoetching and forms through hole.Dry film is a kind of photosensitive PI material, as interim mask.The thickness of dry film can be divided into four classes: 0.8mil, 1.2mil, 1.5mil, 2.0mil, and dry film is thinner, and the circuit of making is meticulousr.Preferably 0.8mil dry film, exposure accuracy is high.
In the present embodiment, on dry film corresponding to the rightmost side of glass substrate through hole, make the through hole corresponding with vertical light through hole by lithography.
The 3rd step after dry film photoetching (uv-exposure) is developed, is filled waveguide material formation surrounding layer in exposed vertical light through hole, and after filling, toasting and making outsourcing layer curing molding, baking temperature is 50 ~ 80 °.The preferred PMMA material of outsourcing layer, the method for filling can be spin coating or spraying.
The 4th step, peels off dry film, then vertical light through hole is polished.
The 5th step adopts PVD or ALD deposition techniques dielectric layer 3 on the sidewall of vertical glass through hole.Dielectric layer comprises the diffusion impervious layer, adhesion layer and the Seed Layer that from glass substrate, upwards set gradually, the preferred TiN/Ti/Cu combination of diffusion impervious layer, adhesion layer and Seed Layer, and thickness is got 200nm/200nm/1000nm.
Before metallization medium layer in vertical glass through hole, can also be chosen in a bottom ephemeral key unification support plate of glass substrate, in the 6th step electro-coppering, fill the thick removal of copper.
The 6th step, fills to electro-coppering in vertical glass through hole, and annealing.Optimization of Copper bath element proportioning, optimizes Current Control waveform, realizes the excellent filling of high-aspect-ratio.
Use the method for chemically mechanical polishing (CMP) or etching to remove surperficial excess metal layer, remove surperficial copper and dielectric layer.Preferably CMP technique, because the cost of copper etching is higher than CMP.
The 7th step, above glass substrate, spin coating photoresist 14 or dry film are as mask.
The 8th step, photoetching on mask, development, post bake, form RDL figure 10, and retain the mask of vertical light through hole top.
The 9th step is used PVD technology evaporation one deck underlying metal in RDL figure 10, such as TiW, and a thickness hundreds of nm; Then on underlying metal, sputter copper forms copper layer 4, and copper layer thickness is several microns.
The tenth step, removes photoresist or dry film, retains RDL figure, removes unnecessary metal.
The 11 step, spin coating waveguide material, and fill waveguide material at RDL upper surface and form horizontal wave conducting shell 5, or adopt the silicon dioxide of PECVD dopant deposition germanium to form horizontal wave conducting shell 5, the thickness of horizontal wave conducting shell at several microns to tens microns.Horizontal wave conducting shell 5 is connected as a single entity with the waveguide material in vertical light through hole 9, and the method for filling can be spin coating or spraying.The preferred BCB material of waveguide material.
The 12 step, horizontal wave conducting shell 5 etchings form photovoltaic interconnects holes 11, and on the horizontal wave conducting shell 5 above corresponding vertical light through hole 9 lateral walls etching del catoptron 13.
Horizontal wave conducting shell 5 can be photosensitive PI material, by exposure, develop, solidify and obtain the del waveguide shapes that needs, or uses cut to form del waveguide shapes, also can form waveguide by the mode of impression.If adopt the silicon dioxide of PECVD dopant deposition germanium to form horizontal wave conducting shell, the del waveguide shapes of Waveguide end face adopts dry etching to form.
The equilateral triangle that the shape of del catoptron is preferably stood upside down.
The 13 step, to 11 electro-copperings of photovoltaic interconnects hole, realizes the parallel link of electricity.Mask exposure photoetching, etching front copper, forms wiring layer, uses subtractive process, retains wiring, takes out unnecessary metal, makes second layer RDL.
The 14 step, above horizontal wave conducting shell 5, the photosensitive PI material of spin coating is made top covering 6, realizes surperficial passivation; And photoetching, development on top covering 6, solidify and offer opening 12, minimal openings is 10 μ m.Photosensitive PI material category is a lot, and refractive index ratio BCB is low.
The 15 step, in the opening 12 of top covering 6, plated metal forms UBM, and UBM thickness is at several microns.
The 16 step, repeats the first step to the 15 steps, makes the back side of glass substrate.
Claims (5)
1. the three-dimensional photoelectricity simultaneous interpretation of glass-based device, comprises glass substrate (1), it is characterized in that: on described glass substrate (1), be disposed with copper layer (4), horizontal wave conducting shell (5) and top covering (6); On described glass substrate (1), be vertically installed with vertical light through hole (9) and the vertical glass through hole (7) being communicated with copper layer (4), on described copper layer, be laid with RDL figure (10), sandwich layer and horizontal wave conducting shell in described vertical light through hole are connected as a single entity, the del catoptron (13) that is provided with photovoltaic interconnects hole (11) and corresponding vertical light through hole (9) lateral wall on described horizontal wave conducting shell (5), is provided with the opening (12) being communicated with photovoltaic interconnects hole (11) on described top covering; Described photovoltaic interconnects hole (11) and opening (12) are electroplate with copper liquid.
2. the method for making of the three-dimensional photoelectricity simultaneous interpretation of glass-based device, is characterized in that mainly comprising the following steps: first on glass substrate, by etch process, manufacture vertical light through hole and vertical glass through hole; Secondly in vertical glass through hole, fill waveguide material and electrical interconnection material, above glass substrate, arrange RDL figure copper steam-plating layer; Then by whirl coating or spraying and exposure technology, complete the making of vertical light through hole sandwich layer and horizontal wave conducting shell; The last interconnection that forms metal RDL layer above horizontal wave conducting shell.
3. the method for making of the three-dimensional photoelectricity simultaneous interpretation of glass-based according to claim 2 device, is characterized in that specifically comprising the following steps:
The first step, at the some through holes perpendicular to glass substrate of the positive etching of glass substrate (1), through hole comprises vertical glass through hole (7) and the vertical light through hole (9) of finished product;
Second step, coating dry film (2) is as photoresist, and the dry film place above the through hole of corresponding vertical light through hole carries out photoetching and forms through hole;
The 3rd step after dry film photoetching development, is filled waveguide material formation surrounding layer in exposed vertical light through hole;
The 4th step, peels off dry film;
The 5th step adopts PVD or ALD deposition techniques dielectric layer (3) on the sidewall of vertical glass through hole;
The 6th step, fills to electro-coppering in vertical glass through hole, and annealing;
The 7th step, above glass substrate, spin coating photoresist or dry film are as mask;
The 8th step, photoetching on mask, development, post bake, form RDL figure (10), and retain the mask of vertical light through hole top;
The 9th step, evaporation one deck underlying metal in RDL figure, then on underlying metal, sputter copper forms copper layer (4);
The tenth step, removes photoresist or dry film, retains RDL figure, removes unnecessary metal;
The 11 step, spin coating waveguide material, and fill waveguide material or adopt the silicon dioxide of PECVD dopant deposition germanium to form horizontal wave conducting shell (5) at RDL upper surface;
The 12 step, forms photovoltaic interconnects hole (11) in horizontal wave conducting shell (5) etching, and the upper etching del catoptron (13) of the horizontal wave conducting shell (5) in corresponding vertical light through hole (9) lateral wall top;
The 13 step, to photovoltaic interconnects hole (11) electro-coppering;
The 14 step, makes top covering (6) at the photosensitive PI material of horizontal wave conducting shell (5) top spin coating, and goes up photoetching, development, solidifies and offer opening (12) at top covering (6);
The 15 step is electroplated and is formed UBM in the opening (12) of top covering (6);
The 16 step, repeats the 7th step to the 15 steps at the glass substrate back side, complete.
4. the method for making of the three-dimensional photoelectricity simultaneous interpretation of glass-based according to claim 3 device, it is characterized in that: described in the 5th step, dielectric layer comprises the diffusion impervious layer, adhesion layer and the Seed Layer that from glass substrate, upwards set gradually, the preferred TiN/Ti/Cu combination of diffusion impervious layer, adhesion layer and Seed Layer, thickness is got 200nm/200nm/1000nm.
5. the method for making of the three-dimensional photoelectricity simultaneous interpretation of glass-based according to claim 3 device, it is characterized in that: del catoptron (13) described in the 12 step is by exposure, development, the curing del waveguide shapes that obtains needs, the equilateral triangle that is shaped as handstand of del catoptron.
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| CN110727046A (en) * | 2018-07-16 | 2020-01-24 | 上海新微技术研发中心有限公司 | Method for manufacturing optical coupling end face in three-dimensional integrated optical interconnection chip |
| CN110727046B (en) * | 2018-07-16 | 2021-07-23 | 上海新微技术研发中心有限公司 | Method for manufacturing optical coupling end face in three-dimensional integrated optical interconnection chip |
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| CN111538119A (en) * | 2020-04-21 | 2020-08-14 | 东南大学 | Preparation method of three-dimensional photoelectric interconnection substrate |
| CN115697934A (en) * | 2020-06-10 | 2023-02-03 | 门罗微系统公司 | Passivation material and method for metal plated glass vias |
| WO2023193780A1 (en) * | 2022-04-08 | 2023-10-12 | 南京光智元科技有限公司 | Adapter board, optical chip package, and calculation accelerator and manufacturing method therefor |
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