CN103748967A - 用于光束对准的能量传感器 - Google Patents
用于光束对准的能量传感器 Download PDFInfo
- Publication number
- CN103748967A CN103748967A CN201280040305.4A CN201280040305A CN103748967A CN 103748967 A CN103748967 A CN 103748967A CN 201280040305 A CN201280040305 A CN 201280040305A CN 103748967 A CN103748967 A CN 103748967A
- Authority
- CN
- China
- Prior art keywords
- target
- light beam
- energy
- mixture
- target area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 claims abstract description 90
- 239000013077 target material Substances 0.000 claims abstract description 49
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 30
- 230000003321 amplification Effects 0.000 claims description 33
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 33
- 230000003287 optical effect Effects 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 24
- 238000000926 separation method Methods 0.000 claims description 23
- 238000003384 imaging method Methods 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 16
- 230000001902 propagating effect Effects 0.000 claims description 3
- 230000009897 systematic effect Effects 0.000 claims 2
- 230000005484 gravity Effects 0.000 claims 1
- 238000004458 analytical method Methods 0.000 abstract description 5
- 238000005070 sampling Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 230000001427 coherent effect Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052718 tin Inorganic materials 0.000 description 4
- 238000012937 correction Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000009514 concussion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001868 water Inorganic materials 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 SnBr 4 Chemical class 0.000 description 1
- 229910018956 Sn—In Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
- H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- X-Ray Techniques (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lasers (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (30)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161525561P | 2011-08-19 | 2011-08-19 | |
US61/525,561 | 2011-08-19 | ||
US13/249,504 US8993976B2 (en) | 2011-08-19 | 2011-09-30 | Energy sensors for light beam alignment |
US13/249,504 | 2011-09-30 | ||
PCT/US2012/046093 WO2013028272A1 (en) | 2011-08-19 | 2012-07-10 | Energy sensors for light beam alignment |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103748967A true CN103748967A (zh) | 2014-04-23 |
CN103748967B CN103748967B (zh) | 2017-03-22 |
Family
ID=47711970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280040305.4A Active CN103748967B (zh) | 2011-08-19 | 2012-07-10 | 用于光束对准的能量传感器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8993976B2 (zh) |
EP (1) | EP2745650A4 (zh) |
JP (1) | JP5977828B2 (zh) |
KR (1) | KR101949839B1 (zh) |
CN (1) | CN103748967B (zh) |
TW (1) | TWI536869B (zh) |
WO (1) | WO2013028272A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109792831A (zh) * | 2016-09-14 | 2019-05-21 | Asml荷兰有限公司 | 在极紫外光源中的靶轨迹量测 |
CN110462522A (zh) * | 2017-03-20 | 2019-11-15 | Asml荷兰有限公司 | 光刻系统、euv辐射源、光刻扫描设备和控制系统 |
CN111955058A (zh) * | 2018-04-03 | 2020-11-17 | Asml荷兰有限公司 | 光束的空间调制 |
CN112703451A (zh) * | 2018-09-12 | 2021-04-23 | 西默有限公司 | 用于气体放电台的本体的量测 |
CN112930714A (zh) * | 2018-10-26 | 2021-06-08 | Asml荷兰有限公司 | 监测光发射 |
WO2022121657A1 (zh) * | 2020-12-11 | 2022-06-16 | 苏州瑞派宁科技有限公司 | 检测装置、激光等离子光源及其调节方法 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9148941B2 (en) * | 2013-01-22 | 2015-09-29 | Asml Netherlands B.V. | Thermal monitor for an extreme ultraviolet light source |
US9000405B2 (en) * | 2013-03-15 | 2015-04-07 | Asml Netherlands B.V. | Beam position control for an extreme ultraviolet light source |
US9558858B2 (en) * | 2013-08-14 | 2017-01-31 | Kla-Tencor Corporation | System and method for imaging a sample with a laser sustained plasma illumination output |
WO2015029137A1 (ja) | 2013-08-27 | 2015-03-05 | ギガフォトン株式会社 | 極端紫外光生成装置及び極端紫外光生成システム |
US9209595B2 (en) * | 2014-01-31 | 2015-12-08 | Asml Netherlands B.V. | Catalytic conversion of an optical amplifier gas medium |
US9271381B2 (en) * | 2014-02-10 | 2016-02-23 | Asml Netherlands B.V. | Methods and apparatus for laser produced plasma EUV light source |
EP3142823B1 (de) * | 2014-05-13 | 2020-07-29 | Trumpf Laser- und Systemtechnik GmbH | Einrichtung zur überwachung der ausrichtung eines laserstrahls und euv-strahlungserzeugungsvorrichtung damit |
US10422691B2 (en) * | 2015-03-03 | 2019-09-24 | Asml Netherlands B.V. | Radiation sensor apparatus |
US9927292B2 (en) | 2015-04-23 | 2018-03-27 | Asml Netherlands B.V. | Beam position sensor |
WO2017056324A1 (ja) | 2015-10-02 | 2017-04-06 | ギガフォトン株式会社 | 極端紫外光生成システム |
WO2017077584A1 (ja) | 2015-11-03 | 2017-05-11 | ギガフォトン株式会社 | 極端紫外光生成装置 |
US9536631B1 (en) * | 2015-11-19 | 2017-01-03 | Asml Netherlands B.V. | Systems and methods to avoid instability conditions in a source plasma chamber |
JPWO2017090167A1 (ja) * | 2015-11-26 | 2018-09-13 | ギガフォトン株式会社 | 極端紫外光生成装置 |
WO2017130346A1 (ja) * | 2016-01-28 | 2017-08-03 | ギガフォトン株式会社 | 極端紫外光生成装置 |
WO2017154111A1 (ja) * | 2016-03-08 | 2017-09-14 | ギガフォトン株式会社 | 極端紫外光生成装置 |
WO2017163345A1 (ja) * | 2016-03-23 | 2017-09-28 | ギガフォトン株式会社 | 極端紫外光生成装置及び極端紫外光の重心位置の制御方法 |
US9778022B1 (en) | 2016-09-14 | 2017-10-03 | Asml Netherlands B.V. | Determining moving properties of a target in an extreme ultraviolet light source |
WO2018131123A1 (ja) | 2017-01-12 | 2018-07-19 | ギガフォトン株式会社 | 極端紫外光生成システム |
WO2018131146A1 (ja) * | 2017-01-13 | 2018-07-19 | ギガフォトン株式会社 | 極端紫外光生成システム |
WO2018179068A1 (ja) * | 2017-03-27 | 2018-10-04 | ギガフォトン株式会社 | Euv光生成装置及びeuv光の重心位置の制御方法 |
NL2021836A (en) | 2017-10-26 | 2019-05-01 | Asml Netherlands Bv | System for monitoring a plasma |
WO2020064195A1 (en) * | 2018-09-25 | 2020-04-02 | Asml Netherlands B.V. | Laser system for target metrology and alteration in an euv light source |
TW202041103A (zh) | 2019-01-30 | 2020-11-01 | 荷蘭商Asml荷蘭公司 | 判定在極紫外光光源中之目標之移動性質 |
TWI853016B (zh) * | 2019-04-29 | 2024-08-21 | 荷蘭商Asml荷蘭公司 | 使用機械濾光器之度量衡裝置及方法 |
US11320744B2 (en) * | 2020-05-22 | 2022-05-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for controlling extreme ultraviolet light |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050199829A1 (en) * | 2004-03-10 | 2005-09-15 | Partlo William N. | EUV light source |
CN1771072A (zh) * | 2003-04-08 | 2006-05-10 | 西默股份有限公司 | 用于euv光源的集光器 |
CN1969372A (zh) * | 2004-06-24 | 2007-05-23 | 株式会社尼康 | Euv光源、euv曝光装置及半导体元件的制造方法 |
CN101194341A (zh) * | 2005-06-08 | 2008-06-04 | 西默股份有限公司 | 使等离子体-生成的离子偏转以防止离子到达euv光源的内部元件的系统和方法 |
US20090095925A1 (en) * | 2005-06-29 | 2009-04-16 | Cymer, Inc. | LPP EUV light source drive laser system |
US7633070B2 (en) * | 2006-12-18 | 2009-12-15 | Kla-Tencor Technologies Corporation | Substrate processing apparatus and method |
US20100258750A1 (en) * | 2009-04-09 | 2010-10-14 | Partlo William N | System, method and apparatus for aligning and synchronizing target material for optimum extreme ultraviolet light output |
CN101866819A (zh) * | 2009-04-15 | 2010-10-20 | 优志旺电机株式会社 | 激光驱动光源 |
US20110141865A1 (en) * | 2009-12-15 | 2011-06-16 | Cymer Inc. | Metrology for Extreme Ultraviolet Light Source |
CN102144191A (zh) * | 2008-09-11 | 2011-08-03 | Asml荷兰有限公司 | 辐射源和光刻设备 |
CN102144192A (zh) * | 2008-09-09 | 2011-08-03 | Asml荷兰有限公司 | 辐射系统和光刻设备 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7598509B2 (en) | 2004-11-01 | 2009-10-06 | Cymer, Inc. | Laser produced plasma EUV light source |
DE10251435B3 (de) * | 2002-10-30 | 2004-05-27 | Xtreme Technologies Gmbh | Strahlungsquelle zur Erzeugung von extrem ultravioletter Strahlung |
JP4917014B2 (ja) * | 2004-03-10 | 2012-04-18 | サイマー インコーポレイテッド | Euv光源 |
US8766212B2 (en) * | 2006-07-19 | 2014-07-01 | Asml Netherlands B.V. | Correction of spatial instability of an EUV source by laser beam steering |
JP5612579B2 (ja) | 2009-07-29 | 2014-10-22 | ギガフォトン株式会社 | 極端紫外光源装置、極端紫外光源装置の制御方法、およびそのプログラムを記録した記録媒体 |
US8173985B2 (en) | 2009-12-15 | 2012-05-08 | Cymer, Inc. | Beam transport system for extreme ultraviolet light source |
-
2011
- 2011-09-30 US US13/249,504 patent/US8993976B2/en active Active
-
2012
- 2012-07-10 CN CN201280040305.4A patent/CN103748967B/zh active Active
- 2012-07-10 WO PCT/US2012/046093 patent/WO2013028272A1/en active Application Filing
- 2012-07-10 EP EP12825084.2A patent/EP2745650A4/en not_active Withdrawn
- 2012-07-10 JP JP2014527148A patent/JP5977828B2/ja active Active
- 2012-07-10 KR KR1020147007197A patent/KR101949839B1/ko active IP Right Grant
- 2012-08-01 TW TW101127771A patent/TWI536869B/zh active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1771072A (zh) * | 2003-04-08 | 2006-05-10 | 西默股份有限公司 | 用于euv光源的集光器 |
US20050199829A1 (en) * | 2004-03-10 | 2005-09-15 | Partlo William N. | EUV light source |
US7388220B2 (en) * | 2004-03-10 | 2008-06-17 | Cymer, Inc. | EUV light source |
CN1969372A (zh) * | 2004-06-24 | 2007-05-23 | 株式会社尼康 | Euv光源、euv曝光装置及半导体元件的制造方法 |
CN101194341A (zh) * | 2005-06-08 | 2008-06-04 | 西默股份有限公司 | 使等离子体-生成的离子偏转以防止离子到达euv光源的内部元件的系统和方法 |
US20090095925A1 (en) * | 2005-06-29 | 2009-04-16 | Cymer, Inc. | LPP EUV light source drive laser system |
US7633070B2 (en) * | 2006-12-18 | 2009-12-15 | Kla-Tencor Technologies Corporation | Substrate processing apparatus and method |
CN102144192A (zh) * | 2008-09-09 | 2011-08-03 | Asml荷兰有限公司 | 辐射系统和光刻设备 |
CN102144191A (zh) * | 2008-09-11 | 2011-08-03 | Asml荷兰有限公司 | 辐射源和光刻设备 |
US20100258750A1 (en) * | 2009-04-09 | 2010-10-14 | Partlo William N | System, method and apparatus for aligning and synchronizing target material for optimum extreme ultraviolet light output |
CN101866819A (zh) * | 2009-04-15 | 2010-10-20 | 优志旺电机株式会社 | 激光驱动光源 |
US20110141865A1 (en) * | 2009-12-15 | 2011-06-16 | Cymer Inc. | Metrology for Extreme Ultraviolet Light Source |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109792831A (zh) * | 2016-09-14 | 2019-05-21 | Asml荷兰有限公司 | 在极紫外光源中的靶轨迹量测 |
CN109792831B (zh) * | 2016-09-14 | 2023-12-01 | Asml荷兰有限公司 | 在极紫外光源中的靶轨迹量测 |
CN110462522A (zh) * | 2017-03-20 | 2019-11-15 | Asml荷兰有限公司 | 光刻系统、euv辐射源、光刻扫描设备和控制系统 |
CN111955058A (zh) * | 2018-04-03 | 2020-11-17 | Asml荷兰有限公司 | 光束的空间调制 |
CN112703451A (zh) * | 2018-09-12 | 2021-04-23 | 西默有限公司 | 用于气体放电台的本体的量测 |
CN112930714A (zh) * | 2018-10-26 | 2021-06-08 | Asml荷兰有限公司 | 监测光发射 |
WO2022121657A1 (zh) * | 2020-12-11 | 2022-06-16 | 苏州瑞派宁科技有限公司 | 检测装置、激光等离子光源及其调节方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2013028272A1 (en) | 2013-02-28 |
US20130043401A1 (en) | 2013-02-21 |
JP5977828B2 (ja) | 2016-08-24 |
KR101949839B1 (ko) | 2019-02-19 |
EP2745650A4 (en) | 2015-05-13 |
CN103748967B (zh) | 2017-03-22 |
US8993976B2 (en) | 2015-03-31 |
EP2745650A1 (en) | 2014-06-25 |
TW201311057A (zh) | 2013-03-01 |
JP2014531743A (ja) | 2014-11-27 |
KR20140053347A (ko) | 2014-05-07 |
TWI536869B (zh) | 2016-06-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103748967A (zh) | 用于光束对准的能量传感器 | |
KR101885748B1 (ko) | 광원 초점의 정렬 | |
JP2014531743A5 (zh) | ||
US9468082B2 (en) | Extreme ultraviolet light generation apparatus and control method for laser apparatus in extreme ultraviolet light generation system | |
US10794683B2 (en) | Determining moving properties of a target in an extreme ultraviolet light source | |
US20100258750A1 (en) | System, method and apparatus for aligning and synchronizing target material for optimum extreme ultraviolet light output | |
US9167679B2 (en) | Beam position control for an extreme ultraviolet light source | |
JP7568763B2 (ja) | 極端紫外光源におけるターゲット軌道計測 | |
US10314153B2 (en) | Target expansion rate control in an extreme ultraviolet light source | |
EP2767145B1 (en) | Alignment system and extreme ultraviolet light generation system | |
KR20180038543A (ko) | 극자외 광원 내에서의 타겟 팽창 속도 제어 방법 | |
TWI612851B (zh) | 用於極紫外線光源的系統、將自極紫外光系統產生之照射放大光束相對於標靶材料對準的方法及極紫外光系統 | |
US7038220B2 (en) | Dose distribution reading method and reader for glass dosimeter | |
JP6799583B2 (ja) | 極端紫外光生成装置及び極端紫外光の重心位置の制御方法 | |
JP6866471B2 (ja) | Euv光生成装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: ASML NETHERLANDS B. V. Free format text: FORMER OWNER: CYMER INC. Effective date: 20150108 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150108 Address after: Horn, Holland Applicant after: ASML HOLLAND INC. Address before: American California Applicant before: CYMER, INC. |
|
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Holland Weide Eindhoven Applicant after: ASML Holland Co., Ltd. Address before: Horn, Holland Applicant before: ASML HOLLAND INC. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: ASML NETHERLANDS B. V. TO: ASML HOLLAND CO., LTD. Free format text: CORRECT: ADDRESS; FROM: |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |