CN103715303A - Diffusion method for improving solar cell filling - Google Patents
Diffusion method for improving solar cell filling Download PDFInfo
- Publication number
- CN103715303A CN103715303A CN201310722031.3A CN201310722031A CN103715303A CN 103715303 A CN103715303 A CN 103715303A CN 201310722031 A CN201310722031 A CN 201310722031A CN 103715303 A CN103715303 A CN 103715303A
- Authority
- CN
- China
- Prior art keywords
- diffusion
- nitrogen
- solar cell
- low temperature
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 93
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 118
- 229910052757 nitrogen Inorganic materials 0.000 claims description 59
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 33
- 239000001301 oxygen Substances 0.000 claims description 33
- 229910052760 oxygen Inorganic materials 0.000 claims description 33
- 229910052698 phosphorus Inorganic materials 0.000 claims description 31
- 239000011574 phosphorus Substances 0.000 claims description 31
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical group ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 230000006641 stabilisation Effects 0.000 claims description 4
- 238000011105 stabilization Methods 0.000 claims description 4
- 238000010792 warming Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 6
- 125000004437 phosphorous atom Chemical group 0.000 description 6
- 238000010926 purge Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a diffusion method for improving solar cell filling and belongs to the solar cell manufacturing technology field. The manufacturing technology comprises low temperature diffusion and high temperature propulsion. The method is characterized by further comprising a secondary low temperature diffusion step, the temperature of the secondary low temperature diffusion step is 700-800 DEG C; after low temperature diffusion and high temperature propulsion, secondary low temperature diffusion is carried out, phosphor atom movements decrease, the phosphor atoms are difficult to diffuse in a silicon chip, so no influence is exerted on square resistance; under the condition of no change of junction depth, impurity concentration at a surface of the silicon chip can be improved, a filling effect of a solar cell is facilitated to improve, photoelectric conversion efficiency of the solar cell is improved, and performance of the solar cell is improved.
Description
Technical field
The invention belongs to solar cell making process technical field.
Background technology
The process of making solar cell generally comprises the technological operations such as ultrasonic cleaning, making herbs into wool, diffusion, etching, dephosphorization silex glass, antireflective coating, silk screen printing, testing, sorting.Wherein, diffusion, also claims diffusion system knot, is the key link of preparing solar cell.
Diffusion refers to by P type silicon chip surface doped N-type impurity, forms the process of P-N knot; General employing is passed into oxygen, the nitrogen that carries phosphorus oxychloride in the diffusion furnace of high temperature according to a certain percentage, at silicon chip surface, forms phosphorous oxide layer; At high temperature, phosphorus atoms from this oxide layer is diffused in silicon chip, thereby on the surface of P type silicon, form the heavily doped N-type of one deck district, finally form emitter junction.Now, the phosphorus atoms of silicon chip surface is dense, the activity of atom aggravation during high temperature, in this region because electric torpescence phosphorus atoms can cause lattice defect in interstitial void position, and because phosphorus does not mate with the atomic radius of silicon, the phosphorus of high concentration also can cause lattice mismatch, therefore 0.2
in the battery top layer of m left and right, minority carrier lifetime is lower, and the photo-generated carrier that the shortwave photon that top layer absorbs produces is very micro-to the photoelectric current output of battery, and this layer becomes " dead layer ".
A kind of effective ways that improve the efficiency of crystal-silicon solar cell are the square resistances that improve after diffusion, wherein do high square resistance and be exactly wherein a kind of.The diffusion link of current silicon solar cell, diffusion way is divided into three kinds: 1, High temperature diffusion, high temperature advance; 2, low temperature diffusion, high temperature advances; 3, low temperature diffusion, high temperature advances, High temperature diffusion, wherein High temperature diffusion depositing temperature be 820-900 ℃, high temperature to advance temperature be that 820-900 ℃, low temperature diffusion depositing temperature are 700-800 ℃, these three kinds of methods all can be accomplished high square resistance by battery.But at high temperature, advance link, the movable aggravation of phosphorus atoms, easily causes lattice defect; Fltting speed is fast simultaneously, has reduced surface concentration; If under hot conditions, too much sedimentary phosphor source, certainly will reduce square resistance; Accelerate surperficial phosphorus source to silicon substrate diffusion into the surface, strengthen junction depth, affect battery efficiency.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of diffusion knot method processed that solar cell is filled that improves, and contributes to improve the filling effect of solar battery sheet, improves the photoelectric conversion efficiency of solar battery sheet, thereby improves the performance of solar cell.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
Improve the diffusion knot method processed that solar cell is filled, its making step comprises silicon chip preliminary treatment, and---low temperature diffusion---high temperature propelling---goes out boat, characterized by further comprising secondary low temperature diffusion; Described secondary low temperature diffusion is carried out after high temperature forward step, before going out boat; Temperature during described secondary low temperature diffusion is 700 ℃-800 ℃.
Concrete, temperature during described secondary low temperature diffusion is 750 ℃;
During described secondary low temperature diffusion, after temperature stabilization, pass into and take phosphorus source nitrogen, oxygen and nitrogen and carry out constant source diffusion, be 6-8min diffusion time; The described flow of taking phosphorus source nitrogen is 600-800sccm, and the flow of oxygen is 600-800sccm, and the flow of nitrogen is 7-8slm;
During a described low temperature diffusion, pretreated silicon chip is put in diffusion furnace, is warming up to 700-800 ℃, pass into and take phosphorus source nitrogen, oxygen and nitrogen and carry out constant source diffusion, be 14-16min diffusion time; The described flow of taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm;
When described high temperature advances, stop passing into and take phosphorus source nitrogen, temperature is risen to 820-850 ℃, pass into oxygen and nitrogen simultaneously, advance, the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, and be 14-16min diffusion time;
Described phosphorus source is phosphorus oxychloride, and source temperature is constant in 19-21 ℃.
The square resistance of the setting parameters such as the gas flow in above-mentioned manufacture craft process, diffusion time and made battery has relation, and the present invention take that to make the battery that square resistance is 80 ohm be example.
The beneficial effect that adopts technique scheme to produce is: after low temperature diffusion and high temperature propelling, carry out secondary low temperature diffusion, phosphorus atoms activity weakens, and phosphorus atoms is difficult to, to silicon chip diffusion inside, can not impact square resistance; In the situation that not changing junction depth, can improve the impurity concentration of silicon chip surface, contribute to improve the filling effect of solar battery sheet, improve the photoelectric conversion efficiency of solar battery sheet, thereby improve the performance of solar cell.
Embodiment
Below in conjunction with embodiment, the present invention is further detailed explanation.
Embodiment 1
The battery that the making square resistance of take is 80 ohm is example, and the diffusion system knot technique of this solar cell comprises:
Step S1, SiO grows on the surface of silicon chip
2layer, obtains preliminary treatment silicon chip;
Step S2, a low temperature diffusion, is put in pretreated silicon chip in diffusion furnace, is warming up to 800 ℃, passes into take phosphorus source nitrogen, oxygen and nitrogen and carry out constant source diffusion, and be 14-16min diffusion time; The described flow of taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm;
Step S3, high temperature advances, and stops passing into and takes phosphorus source nitrogen, and it is 830 ℃ that temperature is risen to temperature, passes into oxygen and nitrogen simultaneously, advances, and the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, be 14-16min diffusion time;
Step S4, secondary low temperature diffusion, is cooled to 800 ℃, after temperature stabilization, passes into and takes phosphorus source nitrogen, oxygen and nitrogen and carry out constant source diffusion, and be 6-8min diffusion time; The described flow of taking phosphorus source nitrogen is 600-800sccm, and the flow of oxygen is 600-800sccm, and the flow of nitrogen is 7-8slm.
Step S5, boiler tube purges, and goes out boat.
Embodiment 2
The difference of itself and embodiment 1 is: step S4, the temperature of secondary low temperature diffusion is 750 ℃.
Embodiment 3
The difference of itself and embodiment 1 is: step S4, the temperature of secondary low temperature diffusion is 700 ℃.
Following comparative example is three kinds of existing method of diffusion in background technology.
Comparative example 1
Carry out High temperature diffusion and high temperature and advance two steps, its manufacture craft comprises:
Step S1, SiO grows on the surface of silicon chip
2layer, obtains preliminary treatment silicon chip;
Step S2, High temperature diffusion, is put in pretreated silicon chip in diffusion furnace, and temperature rises to 830 ℃, passes into take phosphorus source nitrogen, oxygen and nitrogen and carry out constant source diffusion, and be 14-16min diffusion time; The described flow of taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm;
Step S3, high temperature advances, and stops passing into and takes phosphorus source nitrogen, and it is 830 ℃ that temperature is risen to temperature, passes into oxygen and nitrogen simultaneously, advances, and the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, be 14-16min diffusion time;
Step S5, boiler tube purges, and goes out boat.
Comparative example 2
Carry out low temperature diffusion and high temperature and advance two steps, its manufacture craft comprises:
Step S1, SiO grows on the surface of silicon chip
2layer, obtains preliminary treatment silicon chip;
Step S2, low temperature diffusion, is put in pretreated silicon chip in diffusion furnace, and temperature rises to 800 ℃, passes into take phosphorus source nitrogen, oxygen and nitrogen and carry out constant source diffusion, and be 14-16min diffusion time; The described flow of taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm;
Step S3, high temperature advances, and stops passing into and takes phosphorus source nitrogen, and it is 830 ℃ that temperature is risen to temperature, passes into oxygen and nitrogen simultaneously, advances, and the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, be 14-16min diffusion time;
Step S5, boiler tube purges, and goes out boat.
Comparative example 3
Carry out low temperature diffusion, high temperature propelling and three steps of High temperature diffusion, its manufacture craft comprises:
Step S1, SiO grows on the surface of silicon chip
2layer, obtains preliminary treatment silicon chip;
Step S2, low temperature diffusion, is put in pretreated silicon chip in diffusion furnace, and temperature rises to 800 ℃, passes into take phosphorus source nitrogen, oxygen and nitrogen and carry out constant source diffusion, and be 14-16min diffusion time; The described flow of taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm;
Step S3, high temperature advances, and stops passing into and takes phosphorus source nitrogen, and it is 830 ℃ that temperature is risen to temperature, passes into oxygen and nitrogen simultaneously, advances, and the flow of oxygen is 900-1200sccm, and the flow of nitrogen is 7-8slm, be 14-16min diffusion time;
Step S4, High temperature diffusion, keeping temperature is 830 ℃, after temperature stabilization, passes into and takes phosphorus source nitrogen, oxygen and nitrogen and carry out constant source diffusion, be 6-8min diffusion time; The described flow of taking phosphorus source nitrogen is 600-800sccm, and the flow of oxygen is 600-800sccm, and the flow of nitrogen is 7-8slm.
Step S5, boiler tube purges, and goes out boat.
In above-mentioned experiment, film source characteristic is consistent, and at 1.5AM, 25 ℃ of ambient temperatures, test under the standard test condition of light intensity 1000w/ ㎡, and the battery performance of embodiment and comparative example is as shown in the table:
Wherein, Voc is open circuit voltage, and Isc is short circuit current, and Rs is series resistance, and Rsh is parallel resistance, and FF is fill factor, curve factor, and EFF is photoelectric conversion efficiency.From test gained battery performance parameter, filling FF and the efficiency EFF of embodiment cell piece are all better than comparative example;
As can be seen from the above-described embodiment, by the present invention, make cell piece, can improve the impurity concentration of silicon chip surface, improve the filling of battery, finally effectively improved cell piece efficiency.
Claims (6)
1. improve the diffusion knot method processed that solar cell is filled, its making step comprises silicon chip preliminary treatment, and---low temperature diffusion---high temperature propelling---goes out boat, characterized by further comprising secondary low temperature diffusion; Described secondary low temperature diffusion is carried out after high temperature forward step, before going out boat; Temperature during described secondary low temperature diffusion is 700 ℃-800 ℃.
2. a kind of diffusion knot method processed that solar cell is filled that improves according to claim 1, the temperature while it is characterized in that described secondary low temperature diffusion is 750 ℃.
3. a kind of diffusion knot method processed that solar cell is filled that improves according to claim 1, while it is characterized in that described secondary low temperature diffusion, after temperature stabilization, passes into and takes phosphorus source nitrogen, oxygen and nitrogen and carry out constant source diffusion, and be 6-8min diffusion time; The described flow of taking phosphorus source nitrogen is 600-800sccm, and the flow of oxygen is 600-800sccm, and the flow of nitrogen is 7-8slm.
4. a kind of diffusion knot method processed that solar cell is filled that improves according to claim 1, while it is characterized in that a described low temperature diffusion, pretreated silicon chip is put in diffusion furnace, be warming up to 700-800 ℃, pass into and take phosphorus source nitrogen, oxygen and nitrogen and carry out constant source diffusion, be 14-16min diffusion time; The described flow of taking phosphorus source nitrogen is 1200-1600sccm, and the flow of oxygen is 1200-1300sccm, and the flow of nitrogen is 7-8slm.
5. a kind of diffusion knot method processed that solar cell is filled that improves according to claim 1, while it is characterized in that described high temperature advances, stop passing into and take phosphorus source nitrogen, temperature is risen to 820-850 ℃, pass into oxygen and nitrogen, advance, the flow of oxygen is 900-1200sccm, the flow of nitrogen is 7-8slm, and be 14-16min diffusion time.
6. a kind of diffusion knot method processed that solar cell is filled that improves according to claim 1, is characterized in that described phosphorus source is phosphorus oxychloride, and source temperature is constant in 19-21 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310722031.3A CN103715303B (en) | 2013-12-24 | 2013-12-24 | A kind of diffusion method improving solar cell and filling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310722031.3A CN103715303B (en) | 2013-12-24 | 2013-12-24 | A kind of diffusion method improving solar cell and filling |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103715303A true CN103715303A (en) | 2014-04-09 |
| CN103715303B CN103715303B (en) | 2016-06-01 |
Family
ID=50408108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310722031.3A Expired - Fee Related CN103715303B (en) | 2013-12-24 | 2013-12-24 | A kind of diffusion method improving solar cell and filling |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103715303B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505425A (en) * | 2014-10-24 | 2015-04-08 | 横店集团东磁股份有限公司 | Method for preparing solar monocrystal back polished cell piece |
| CN109301029A (en) * | 2018-08-01 | 2019-02-01 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of N-type double-sided solar battery |
| CN109449246A (en) * | 2018-09-05 | 2019-03-08 | 浙江爱旭太阳能科技有限公司 | A kind of silicon crystal piece phosphorus diffusion method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050133084A1 (en) * | 2003-10-10 | 2005-06-23 | Toshio Joge | Silicon solar cell and production method thereof |
| CN102586884A (en) * | 2012-03-06 | 2012-07-18 | 英利能源（中国）有限公司 | Polysilicon silicon chip double-diffusion manufacturing method |
| CN102820383A (en) * | 2012-09-11 | 2012-12-12 | 江阴鑫辉太阳能有限公司 | Spread method of polycrystalline silicon solar cell |
| CN103367551A (en) * | 2013-08-06 | 2013-10-23 | 中利腾晖光伏科技有限公司 | Diffusion process of crystalline silicon solar cell |
-
2013
- 2013-12-24 CN CN201310722031.3A patent/CN103715303B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050133084A1 (en) * | 2003-10-10 | 2005-06-23 | Toshio Joge | Silicon solar cell and production method thereof |
| CN102586884A (en) * | 2012-03-06 | 2012-07-18 | 英利能源（中国）有限公司 | Polysilicon silicon chip double-diffusion manufacturing method |
| CN102820383A (en) * | 2012-09-11 | 2012-12-12 | 江阴鑫辉太阳能有限公司 | Spread method of polycrystalline silicon solar cell |
| CN103367551A (en) * | 2013-08-06 | 2013-10-23 | 中利腾晖光伏科技有限公司 | Diffusion process of crystalline silicon solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505425A (en) * | 2014-10-24 | 2015-04-08 | 横店集团东磁股份有限公司 | Method for preparing solar monocrystal back polished cell piece |
| CN109301029A (en) * | 2018-08-01 | 2019-02-01 | 浙江启鑫新能源科技股份有限公司 | A kind of preparation method of N-type double-sided solar battery |
| CN109449246A (en) * | 2018-09-05 | 2019-03-08 | 浙江爱旭太阳能科技有限公司 | A kind of silicon crystal piece phosphorus diffusion method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103715303B (en) | 2016-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106057980B (en) | A kind of phosphorus diffusion method of crystal silicon solar energy battery | |
| CN101937940B (en) | Technology for manufacturing selective emitter junction solar cell by printed phosphorous source one-step diffusion method | |
| CN105304753A (en) | N-type cell boron diffusion technology | |
| CN104505427B (en) | Improve method and the device of crystal silicon solar cell sheet LID and PID | |
| CN106784153A (en) | Solar battery sheet low pressure diffusion technique | |
| CN102810599B (en) | Phosphorous diffusion method of polycrystalline silicon solar cell | |
| CN105780127B (en) | A kind of phosphorus diffusion method of crystal silicon solar energy battery | |
| CN103618023A (en) | High sheet resistance diffusion process | |
| CN102719894A (en) | Phosphorus diffusion technology of solar cell silicon wafer | |
| CN103606596A (en) | Phosphorus doping silicon wafer, manufacturing method of phosphorus doping silicon wafer, solar cell and manufacturing method of solar cell | |
| CN107293617A (en) | A kind of high-efficiency low-cost solar battery diffusion technology | |
| CN102637778A (en) | PN junction diffusion method | |
| CN111384210A (en) | High open voltage diffusion high sheet resistance process for PERC (permanent resistance resistor) overlapped SE (selective emitter current) | |
| CN105185863A (en) | Method for manufacturing solar cell | |
| CN106403592A (en) | Method for reducing light attenuation of PERC solar cell | |
| CN103715303A (en) | Diffusion method for improving solar cell filling | |
| CN103646993A (en) | Boron diffusion technology of back-junction back-contact crystalline silicon solar cell | |
| CN101820023A (en) | Method for preparing selective emitter of crystal silicon solar cell | |
| CN103633192A (en) | Diffusion process for improving photoelectric conversion efficiency of crystalline silicon solar cell | |
| CN107871660A (en) | A kind of crystal silicon solar energy battery emitter stage phosphorus doping control method | |
| TWI587539B (en) | Manufacturing method of substrate for solar cell | |
| CN102569532A (en) | Secondary deposition and dispersion process for selective emitter battery | |
| CN102881766B (en) | A kind of emitter manufacture craft for solar cell | |
| CN105552150A (en) | Single-sided transverse gradient doped heterojunction battery and preparation method therefor | |
| CN102569501B (en) | Phosphorous diffusion method for polycrystalline silicon solar battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160601 Termination date: 20161224 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |