CN103700578B - Method for manufacturing germanium-silicon nanowire laminated structure - Google Patents
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000002070 nanowire Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 68
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 68
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000003647 oxidation Effects 0.000 claims abstract description 20
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
- 229940119177 germanium dioxide Drugs 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 16
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 16
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims abstract description 12
- 239000012298 atmosphere Substances 0.000 claims abstract description 9
- 239000000126 substance Substances 0.000 claims abstract description 9
- 238000005260 corrosion Methods 0.000 claims abstract description 7
- 230000007797 corrosion Effects 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 4
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- 238000010276 construction Methods 0.000 claims description 34
- 239000012528 membrane Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000000994 depressogenic effect Effects 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000001117 sulphuric acid Substances 0.000 claims description 3
- 235000011149 sulphuric acid Nutrition 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 2
- 229910021641 deionized water Inorganic materials 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 230000037230 mobility Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical compound [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- XCNHXROWMVKLEB-UHFFFAOYSA-N [Ge+2].[O-2].[O-2].[Ti+4] Chemical compound [Ge+2].[O-2].[O-2].[Ti+4] XCNHXROWMVKLEB-UHFFFAOYSA-N 0.000 description 1
- OPTOQCQBJWTWPN-UHFFFAOYSA-N [Si].[Ge].[Si] Chemical compound [Si].[Ge].[Si] OPTOQCQBJWTWPN-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Abstract
The invention discloses a method for manufacturing a germanium-silicon nanowire laminated structure, which comprises the following steps: alternately extending a germanium-silicon film and a germanium film on the surface of the single crystal substrate, and photoetching and etching the surfaces of the germanium-silicon film and the germanium film to obtain a germanium-silicon/germanium line structure; oxidizing the obtained germanium-silicon/germanium line structure in the atmosphere of pure oxygen or mixed gas containing oxygen, preferentially oxidizing germanium into germanium dioxide by utilizing the difference of the germanium and germanium-silicon oxidation rates, and simultaneously keeping germanium-silicon not to be oxidized; and removing germanium dioxide by using a chemical corrosion method to obtain the germanium-silicon nanowire laminated structure. The method for manufacturing the germanium-silicon nanowire structure has the advantages of large-area growth, simple and convenient process, controllable nanowire diameter, low preparation cost and the like.
Description
Technical field
The present invention relates to field of semiconductor integration technology, particularly to a kind of making side of germanium silicon nanowires laminated construction
Method.
Background technology
Semiconductor technology, as the core of information industry and basis, is to weigh a national science technological progress and comprehensive state
The important symbol of power.In past more than 40 year, silicon substrate integrated technology follows Moore's Law by reducing the characteristic size of device
To improve the operating rate of device, to increase integrated level and reduces cost, the characteristic size of silicon base CMOS device is by micron
Yardstick narrows down to nanoscale.But when the grid length of MOS device narrows down to less than 90 nanometers, the thickness of gate medium (silicon dioxide)
Gradually decrease to close to 1 nanometer, the physics limit such as OFF state electric leakage increase, power dissipation density increase, mobil-ity degradation makes device
Penalty, traditional microelectronic integrated technology starts to face the double challenge from physics and technical elements.
For in terms of the material, substituting traditional silicon materials using high mobility material will be quasiconductor collection as backing material
The important development direction of one-tenth technology.Because the hole mobility of germanium silicon and electron mobility are all significantly higher than silicon materials, germanium
Silicon is considered to be expected to replace silicon materials to adapt to the demand of less than 22 nanometers logical devices.On the other hand, from device microstructure
For, in order to improve the control ability to channel carrier concentration for the grid further, the three-dimensional with fin-shaped grid, nano wire as representative is tied
Structure will replace traditional planar structure, becomes the main flow structure of below 22 nanometer nodes.
Content of the invention
(1) technical problem to be solved
In view of this, present invention is primarily targeted at providing a kind of manufacture method of germanium silicon nanowires laminated construction, with
Solve selective corrosion and the preparation problem of germanium silicon nanowires laminated construction, reach and extensive, inexpensive prepare germanium silicon nanowires
The purpose of laminated construction.
(2) technical scheme
For reaching above-mentioned purpose, the invention provides a kind of manufacture method of germanium silicon nanowires laminated construction, the method bag
Include：In single crystalline substrate surface alternating extension germanium-silicon thin membrane and germanium film, and photoetching is carried out to the surface of germanium-silicon thin membrane and germanium film
And etching, obtain the linear of germanium silicon/germanium；Pure oxygen or containing oxygen mixing gas atmosphere under to obtain germanium silicon/
The linear of germanium is aoxidized, and different from germanium silicon oxidation rate using germanium is germanium dioxide by germanium preferential oxidation, protects simultaneously
Hold germanium silicon not oxidized；And remove germanium dioxide using the method for chemical attack, obtain germanium silicon nanowires laminated construction.
In such scheme, in the described step with germanium film in single crystalline substrate surface alternating extension germanium-silicon thin membrane, it is to utilize
Molecular beam epitaxy or ultra-high vacuum CVD method are in single crystalline substrate surface alternating extension germanium-silicon thin membrane and germanium film.Institute
Stating germanium-silicon thin membrane with germanium film is monocrystalline, amorphous or poly-SiGe film and germanium film.Described single crystalline substrate is silicon, on insulator
Silicon, GaAs, sapphire, carborundum, indium phosphide, the silicon substrate being coated with crystalline oxides or gallium arsenide substrate, and above-mentioned
The composite construction of substrate, the crystal orientation of this single crystalline substrate is one kind of (100), (110) or (111), the type of this single crystalline substrate
It is intrinsic, p-type doping or N-shaped doping.
In such scheme, in the described step with germanium film in single crystalline substrate surface alternating extension germanium-silicon thin membrane, germanium film
Thickness be 5～5000 nanometers, the thickness of germanium-silicon thin membrane is 5～5000 nanometers, and in germanium-silicon thin membrane, the component ratio of germanium is between 1%
Between～80%.
In such scheme, in the linear of germanium silicon/germanium of described acquisition, line thickness is 5～5000 nanometers, and lines are high
Spend for 5～5000 nanometers, length is 5 nanometers～50 centimetres.
In such scheme, the line to the germanium silicon/germanium obtaining under the described atmosphere in pure oxygen or the mixing gas containing oxygen
In the step that bar structure is aoxidized, the pressure of described pure oxygen is depressed between 100 atmospheric pressure between 1 air, oxidation anti-
Answer temperature between 450 to 800 degrees Celsius.
In such scheme, the line to the germanium silicon/germanium obtaining under the described atmosphere in pure oxygen or the mixing gas containing oxygen
In the step that bar structure is aoxidized, also include in addition to oxygen in the described mixing gas containing oxygen nitrogen, helium,
Neon or argon.
In such scheme, the method for described utilization chemical attack removes in the step of germanium dioxide, described chemical attack side
Method is using aqueous solution, hydrochloric acid, sulphuric acid, ammonia or using the aqueous solution that organic solvent is diluted, erode that oxidation is formed two
Germanium oxide.Described organic solvent includes methanol, ethanol or acetone, is enough mixed with arbitrary proportion with water energy；Described using organic molten
In the aqueous solution that agent is diluted, the mol ratio of water is between 0.1%～99%.
(3) beneficial effect
The manufacture method of this germanium silicon nanowires laminated construction that the present invention provides, by controlling oxidizing temperature to germanium/germanium
The method that silicon nanowires is selectively oxidized, has larger temperature process window, and method is easy, with low cost, thus tool
There are very important using value and economic worth, it is possible to achieve germanium silicon nano-micro structure size is in sub- 22 nanometers and above node
On precise control, significant.In addition, utilizing the present invention, due to employing the laminated construction of germanium/germanium silicon, by heat
Mechanics controls it is achieved that selective oxidation, makes the germanium component in germanium silicon layer be preferentially oxidized to germanium dioxide, and in germanium silicon layer then
Keep not oxidized state, and then germanium dioxide is removed by the method for aqueous corrosion, thus obtaining germanium silicon nanowires
Laminated construction, so solving the problems, such as selective corrosion and the preparation of germanium silicon nanowires laminated construction, reaches extensive, inexpensive
Prepare the purpose of germanium silicon nanowires laminated construction.
Brief description
Fig. 1 is the method flow diagram of the making germanium silicon nanowires laminated construction that the present invention provides；
Fig. 2 to Fig. 5 is the process chart of the making germanium silicon nanowires laminated construction according to the embodiment of the present invention；Wherein：
Fig. 2 is the schematic diagram of silicon germanium/germanium silicon alternative stacked substrat structure；
Fig. 3 is the etched silicon germanium/germanium silicon lines schematic diagram obtaining；
Fig. 4 is the schematic diagram of the silicon germanium silicon/germanium dioxide Nano-structure laminated construction being obtained using method for oxidation；
Fig. 5 is the schematic diagram removing germanium dioxide between germanium silicon lines using selective wet etching technology.
Specific embodiment
For making the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
The manufacture method of this germanium silicon nanowires laminated construction that the present invention provides, by controlling oxygen reaction temperature, makes
Oxygen is selectively oxidized to germanium/germanium silicon composite structure, preferential oxidation germanium layer formed germanium dioxide keep simultaneously germanium silicon not by
Oxidation, the method further with selective corrosion gets rid of titanium dioxide germanium layer, thus obtaining germanium silicon nanowires laminated construction.
As shown in figure 1, the method flow diagram of the making germanium silicon nanowires laminated construction that Fig. 1 is the present invention to be provided, the method
Comprise the following steps：
Step 1：In single crystalline substrate surface alternating extension germanium-silicon thin membrane and germanium film, and the table to germanium-silicon thin membrane and germanium film
Face carries out photoetching and etching, obtains the linear of germanium silicon/germanium；
Step 2：Under the atmosphere of pure oxygen or the mixing gas containing oxygen, the linear of the germanium silicon/germanium obtaining is carried out
Oxidation, different from germanium silicon oxidation rate using germanium is germanium dioxide by germanium preferential oxidation, keeps germanium silicon not oxidized simultaneously；
Step 3：Method using chemical attack removes germanium dioxide, obtains germanium silicon nanowires laminated construction.
In single crystalline substrate surface alternating extension germanium-silicon thin membrane and germanium film described in step 1, be using molecular beam epitaxy or
Person's ultra-high vacuum CVD method is in single crystalline substrate surface alternating extension germanium-silicon thin membrane and germanium film.Described germanium-silicon thin membrane with
Germanium film is monocrystalline, amorphous or poly-SiGe film and germanium film.Described single crystalline substrate is silicon, silicon-on-insulator, GaAs, indigo plant
Gem, carborundum, indium phosphide, the silicon substrate being coated with crystalline oxides or gallium arsenide substrate, and the composite junction of above-mentioned substrate
Structure, the crystal orientation of this single crystalline substrate is one kind of (100), (110) or (111), and the type of this single crystalline substrate is intrinsic, p-type
Doping or N-shaped doping.The thickness of germanium film is 5～5000 nanometers, and the thickness of germanium-silicon thin membrane is 5～5000 nanometers, and germanium silicon is thin
In film, the component ratio of germanium is between 1%～80%.In the linear of germanium silicon/germanium of described acquisition, line thickness be 5～
5000 nanometers, lines height is 5～5000 nanometers, and length is 5 nanometers～50 centimetres.
Under the atmosphere of pure oxygen or the mixing gas containing oxygen, the lines of the germanium silicon/germanium obtaining are tied described in step 2
Structure is aoxidized, and the pressure of described pure oxygen is depressed between 100 atmospheric pressure between 1 air, and the reaction temperature of oxidation is between 450
To between 800 degrees Celsius.Also include in addition to oxygen in the described mixing gas containing oxygen nitrogen, helium, neon or
Argon.
The method utilizing chemical attack described in step 3 removes germanium dioxide, is using aqueous solution, hydrochloric acid, sulphuric acid, ammonia
Or using the aqueous solution that organic solvent is diluted, erode the germanium dioxide that oxidation is formed.Described organic solvent includes methanol, second
Alcohol or acetone, are enough mixed with arbitrary proportion with water energy；In the aqueous solution that described utilization organic solvent is diluted, the mol ratio of water is situated between
Between 0.1%～99%.
Based on the method flow diagram of the making germanium silicon nanowires laminated construction shown in Fig. 1, Fig. 2 to Fig. 5 is according to the present invention
The process chart of the making germanium silicon nanowires laminated construction of embodiment, specifically includes：
As shown in Fig. 2 replacing epitaxial Germanium silicon layer 101 and each 4 layers of germanium layer 102 from silicon substrate on insulator.Wherein
In germanium silicon layer, the group of germanium is divided into 50%.Silicon-on-insulator substrate structure includes silicon substrate film 105, silicon dioxide layer 104, and absolutely
Edge body upper silicon layer 103.Wherein 200 nanometers of silicon dioxide layer 104 thickness, silicon on insulator layer 103 thickness is 100 nanometers.Alternately
Epitaxial germanium layer thickness is 30 nanometers, 30 nanometers of germanium silicon layer thickness.
As shown in figure 3, using electron beam lithography and using inductively coupled plasma etching (ICP) lithographic technique profit
Use SF6In the structure of Fig. 2, etching obtains the periodic structure of the germanium silicon lines 202/ germanium lines 201 of 20 nanometers of width, between lines
Away from for 100 nanometers.
As shown in figure 4, Fig. 3 structure is carried out with the oxidation processes under the conditions of an atmospheric pressure purity oxygen, oxidizing temperature sets
For 550 degrees Celsius, process 30 minutes, so that germanium layer is selectively oxidized becomes germanium dioxide, and germanium silicon layer keeps not oxidized
State.
As shown in figure 5, utilizing selective wet etching method, the structure that Fig. 4 is obtained is placed in deionized water, by two
Germanium oxide dissolves, thus obtaining germanium silicon nanowires bar laminated construction on Silicon On Insulator.
Particular embodiments described above, has carried out detailed further to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, be should be understood that the specific embodiment that the foregoing is only the present invention, be not limited to the present invention, all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvement done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (9)
1. a kind of manufacture method of germanium silicon nanowires laminated construction is it is characterised in that the method includes：
In single crystalline substrate surface alternating extension germanium-silicon thin membrane and germanium film, and photoetching is carried out to the surface of germanium-silicon thin membrane and germanium film
And etching, obtain the linear of germanium silicon/germanium；
Under the atmosphere of pure oxygen or the mixing gas containing oxygen, the linear of the germanium silicon/germanium obtaining is aoxidized, utilize
Germanium is different from germanium silicon oxidation rate to be germanium dioxide by germanium preferential oxidation, keeps germanium silicon not oxidized simultaneously；And
Method using chemical attack removes germanium dioxide, obtains germanium silicon nanowires laminated construction；
Wherein, under the described atmosphere in pure oxygen or the mixing gas containing oxygen, the linear of the germanium silicon/germanium obtaining is carried out
In the step of oxidation, the pressure of described pure oxygen is depressed between 100 atmospheric pressure between 1 air, the reaction temperature of oxidation between
Between 450 to 800 degrees Celsius.
2. germanium silicon nanowires laminated construction according to claim 1 manufacture method it is characterised in that described in monocrystalline lining
In the step of basal surface alternating extension germanium-silicon thin membrane and germanium film, it is to be sunk using molecular beam epitaxy or ultrahigh vacuum chemical vapor
Area method is in single crystalline substrate surface alternating extension germanium-silicon thin membrane and germanium film.
3. the manufacture method of the germanium silicon nanowires laminated construction described in claim 2 is it is characterised in that described germanium-silicon thin membrane and germanium
Thin film is monocrystalline, amorphous or poly-SiGe film and germanium film.
4. the manufacture method of the germanium silicon nanowires laminated construction described in claim 2 is it is characterised in that described single crystalline substrate is
Silicon, silicon-on-insulator, GaAs, sapphire, carborundum, indium phosphide, the silicon substrate being coated with crystalline oxides or GaAs lining
Bottom, and the composite construction of above-mentioned substrate, the crystal orientation of this single crystalline substrate is one kind of (100), (110) or (111), this monocrystalline
The type of substrate is intrinsic, p-type doping or N-shaped doping.
5. germanium silicon nanowires laminated construction according to claim 1 manufacture method it is characterised in that described in monocrystalline lining
In the step of basal surface alternating extension germanium-silicon thin membrane and germanium film, the thickness of germanium film is 5～5000 nanometers, the thickness of germanium-silicon thin membrane
Spend for 5～5000 nanometers, in germanium-silicon thin membrane, the component ratio of germanium is between 1%～80%.
6. the manufacture method of germanium silicon nanowires laminated construction according to claim 1 is it is characterised in that the germanium of described acquisition
In the linear of silicon/germanium, line thickness is 5～5000 nanometers, and lines height is 5～5000 nanometers, and length is 5 nanometers～50
Centimetre.
7. germanium silicon nanowires laminated construction according to claim 1 manufacture method it is characterised in that described in pure oxygen or
To in the step that aoxidized of linear of the germanium silicon/germanium obtaining under the atmosphere of mixing gas containing oxygen, described contain
Also include nitrogen, helium, neon or argon in addition to oxygen in the mixing gas of oxygen.
8. the manufacture method of germanium silicon nanowires laminated construction according to claim 1 is it is characterised in that described utilize chemistry
The method of corrosion removes in the step of germanium dioxide, and described chemical corrosion method is using deionized water, hydrochloric acid, sulphuric acid, ammonia
Or using the aqueous solution that organic solvent is diluted, erode the germanium dioxide that oxidation is formed.
9. the manufacture method of germanium silicon nanowires laminated construction according to claim 8 is it is characterised in that described organic solvent
Including methanol, ethanol or acetone, enough mixed with arbitrary proportion with water energy；In the aqueous solution that described utilization organic solvent is diluted,
The mol ratio of water is between 0.1%～99%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310740895.8A CN103700578B (en) | 2013-12-27 | 2013-12-27 | Method for manufacturing germanium-silicon nanowire laminated structure |
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Application publication date: 20140402 Assignee: Beijing Eaststar Application Physics Institute Assignor: Institute of Microelectronics of the Chinese Academy of Sciences Contract record no.: X2023990000789 Denomination of invention: A Manufacturing Method for Layered Structure of Ge Si Nanowires Granted publication date: 20170301 License type: Common License Record date: 20230901 |