CN103692337A - Silicon wafer polishing method for adopting mixed fructose to paste silicon wafers - Google Patents
Silicon wafer polishing method for adopting mixed fructose to paste silicon wafers Download PDFInfo
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- CN103692337A CN103692337A CN201310696341.2A CN201310696341A CN103692337A CN 103692337 A CN103692337 A CN 103692337A CN 201310696341 A CN201310696341 A CN 201310696341A CN 103692337 A CN103692337 A CN 103692337A
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- 238000005498 polishing Methods 0.000 title claims abstract description 146
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 93
- 239000010703 silicon Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 21
- 229930091371 Fructose Natural products 0.000 title claims abstract description 9
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 title claims abstract description 9
- 239000005715 Fructose Substances 0.000 title claims abstract description 9
- 235000012431 wafers Nutrition 0.000 title abstract 14
- 238000002156 mixing Methods 0.000 claims abstract description 23
- 239000006188 syrup Substances 0.000 claims abstract description 13
- 235000020357 syrup Nutrition 0.000 claims abstract description 13
- OWEGMIWEEQEYGQ-UHFFFAOYSA-N 100676-05-9 Natural products OC1C(O)C(O)C(CO)OC1OCC1C(O)C(O)C(O)C(OC2C(OC(O)C(O)C2O)CO)O1 OWEGMIWEEQEYGQ-UHFFFAOYSA-N 0.000 claims abstract description 7
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims abstract description 7
- GUBGYTABKSRVRQ-PICCSMPSSA-N Maltose Natural products O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CO)O[C@@H]1O[C@@H]1[C@@H](CO)OC(O)[C@H](O)[C@H]1O GUBGYTABKSRVRQ-PICCSMPSSA-N 0.000 claims abstract description 7
- 239000008103 glucose Substances 0.000 claims abstract description 7
- 238000003825 pressing Methods 0.000 claims abstract description 7
- 239000012530 fluid Substances 0.000 claims description 27
- 235000013379 molasses Nutrition 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 6
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 6
- 230000003213 activating effect Effects 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 150000007530 organic bases Chemical class 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000007788 liquid Substances 0.000 abstract 2
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 abstract 1
- GUBGYTABKSRVRQ-QUYVBRFLSA-N beta-maltose Chemical compound OC[C@H]1O[C@H](O[C@H]2[C@H](O)[C@@H](O)[C@H](O)O[C@@H]2CO)[C@H](O)[C@@H](O)[C@@H]1O GUBGYTABKSRVRQ-QUYVBRFLSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000002604 ultrasonography Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BCAARMUWIRURQS-UHFFFAOYSA-N dicalcium;oxocalcium;silicate Chemical compound [Ca+2].[Ca+2].[Ca]=O.[O-][Si]([O-])([O-])[O-] BCAARMUWIRURQS-UHFFFAOYSA-N 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- -1 pottery Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a silicon wafer polishing method for adopting mixed fructose to paste silicon wafers. The silicon wafer polishing method comprises the following steps of mixing and heating glucose and maltose to obtain a mixed syrup solution; placing a polishing place on a heating device to preheating the polishing place to be 75 DEG C; adding the mixed syrup solution on a rotating polishing place dropwise to enable the syrup solution to evenly cover the upper surface of the whole polishing plate; adhering the silicon wafers to be polished to specific positions of the polishing plate, and using a rubber module to extrude the silicon wafers to be polished to enable the mixed syrup solution on the lower surfaces of the silicon wafers to be polished to distributed evenly; re-pressing and cooling the silicon wafers to be polished; using a polishing liquid delivery device to deliver polishing liquid onto a working table of a polishing machine, polishing the silicon wafers to be polished on the working table of the polishing machine, then placing the silicon wafers in a hydrothermal solution to be subjected to ultrasonography, and enabling the polished silicon wafers to be separated from the polishing plate. The silicon wafer polishing method has the advantages of being wide in application range, simple in process, good in silicon wafer polishing thickness consistency and low in cost, protecting environment and saving energy.
Description
Technical field
The present invention relates to finishing method, relate in particular to a kind of employing and mix the silicon polishing method that fructose is pasted silicon chip.
Background technology
Semiconductor industry is the core of hyundai electronics industry, and the basis of semiconductor industry is silicon materials industry.Although there is various novel semi-conducting material constantly to occur, more than 90% semiconductor devices and circuit, especially super large-scale integration (ULSI) are to be all produced on the silicon single-crystal polishing plate and silicon epitaxial wafer of high-purity high-quality.
Polishing makes crystal substrates any surface finish as mirror, reaches the quality requirement to crystalline substrates sheet on device production line.Also can say, the order ground of polishing is to provide specular surface perfect as far as possible, have no mechanical damage layer and free from admixture pickup for device manufacture.The quality of crystal substrates quality, has epochmaking impact to the electric property of device and integrated circuit and yield rate.The key of quality of finish is the selection of polishing material and polishing technological conditions.In traditional one side chemically mechanical polishing, according to the difference of paster technique, can be divided into two large classes: have wax polishing (to use wax that silicon chip is fixed on to pottery; P6 } B+ T & t* p & H G) carry out polishing on b' 8 U porcelain plates) and with without wax polishing (use template load method, vacuum to inhale the methods such as sheet method silicon chip fixed, then carry out polishing).Have the polishing of wax polishing product silicon chip to remove thick high conformity, but the wax at the back side easy-clear is unclean; Although simple without wax polishing method technique, easy to clean, silicon wafer polishing goes thick conforming controlled poor.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of employing to mix the silicon polishing method that fructose is pasted silicon chip.
The step of the method for the silicon polishing of employing mixing fructose stickup silicon chip is as follows:
1) glucose that is 1～3:3 by percentage by weight mixes with maltose, is heated to 155～165 ℃, heats while stirring it is melted completely, obtains mixing molasses solution;
2) polishing disk is placed on heater and is preheating to 75 ℃;
3) mixing molasses solution being dripped to rotating speed is, on the polishing disk of 1400～1600 revs/min, to make the whole polishing disk upper surface of syrup solution uniform fold;
4) polished silicon chip is attached on polishing disk, with rubber module, pushes polished silicon chip, the mixing molasses sample path length of polished silicon chip lower surface is evenly distributed;
5) on polished silicon chip, pressurize, pressure is 0.2MP again, and be 4～8 minutes pressing time, is cooled to 35 ℃, makes silicon chip stick on securely on polishing disk;
6) with polishing solution delivery device, polishing fluid is transported on polishing machine workbench, on polishing machine workbench, treating polished silicon slice upper surface adopts polishing fluid to carry out chemically mechanical polishing, polish temperature is 35～45 ℃, polishing fluid pH value is 8.7～9.7, polished silicon chip is removed after thickness reaches 10～20 microns and is stopped polishing, by pure water rinsing, remove polished silicon slice remained on surface polishing fluid, be placed in again the hot pure water solution ultrasonic cleaning 10～20 minutes of 60～70 ℃, make the silicon chip of polishing separated from polishing disk.
Described polishing fluid consisting of by weight percentage: silicon dioxide gel: organic base: activating agent: water=0.75:0.1:0.5:20.
The present invention is mixed with the mixing molasses of multiple different melting points with certain proportion component, with high temperature resistant syrup, replace high temperature wax as the alite paste between silicon chip in traditional polishing process and polishing disk.Because syrup is dissolved in hot water and easy cleaning, adopt the inventive method both to save the dewax cleaning operation that tradition has wax polishing, saved again a large amount of Chemical cleaning reagent, had that applied range, technique are simple, silicon wafer polishing removes thick high conformity (thickness deviation is in 5 microns), a feature of low-cost (have wax polishing to reduce 80% and clean cost) and environmental protection and energy saving.Be not only applicable to silicon wafer polishing, be equally applicable to the polishing of the materials such as metal, pottery, glass, sapphire, there is good economic benefit.
Accompanying drawing explanation
Fig. 1 is for adopting syrup to paste silicon wafer polishing schematic diagram;
In figure, polishing solution delivery device 1, polishing disk 2, mixing molasses solution 3, polished silicon chip 4, polishing machine workbench 5.
The specific embodiment
The polishing fluid that the present invention adopts consisting of by weight percentage: silicon dioxide gel: organic base: activating agent: water=0.75:0.1:0.5:20.
As shown in Figure 1, the step of the method for the silicon polishing of employing mixing fructose stickup silicon chip is as follows:
1) glucose that is 1～3:3 by percentage by weight mixes with maltose, is heated to 155～165 ℃, heats while stirring it is melted completely, obtains mixing molasses solution 3;
2) polishing disk 2 is placed on heater and is preheating to 75 ℃;
3) mixing molasses solution 3 being dripped to rotating speed is, on the polishing disk 2 of 1400～1600 revs/min, to make whole polishing disk 2 upper surfaces of syrup solution 3 uniform fold;
4) polished silicon chip 4 is attached on polishing disk, with rubber module, pushes polished silicon chip 4, make mixing molasses solution 3 thickness distribution of polished silicon chip 4 lower surfaces even;
5) pressurization on polished silicon chip 4 again, pressure is 0.2MP, be 4～8 minutes pressing time, is cooled to 35 ℃, and silicon chip is sticked on polishing disk 2 securely;
6) with polishing solution delivery device 1, polishing fluid is transported on polishing machine workbench 5, on polishing machine workbench 5, treating polished silicon slice 4 upper surfaces adopts polishing fluid to carry out chemically mechanical polishing, polish temperature is 35～45 ℃, polishing fluid pH value is 8.7～9.7, polished silicon chip 4 is removed after thickness reaches 10～20 microns and is stopped polishing, by pure water rinsing, remove polished silicon slice remained on surface polishing fluid, be placed in again the hot pure water solution ultrasonic cleaning 10～20 minutes of 60～70 ℃, make the silicon chip of polishing separated from polishing disk.
Embodiment 1
1) glucose (C that is 1:3 by percentage by weight
6h
12o
6) mix with maltose (C12H22O11H2O), be heated to 155 ℃, heat while stirring it is melted completely, obtain mixing molasses solution;
2) polishing disk is placed on heater and is preheating to 75 ℃;
3) mixing molasses solution being dripped to rotating speed is, on the polishing disk of 1400 revs/min, to make the whole polishing disk upper surface of syrup solution uniform fold;
4) polished silicon chip is attached on polishing disk desired location, with rubber module, pushes polished silicon chip, the mixing molasses sample path length of polished silicon chip lower surface is evenly distributed;
5) on polished silicon chip, pressurize, pressure is 0.2MP again, and be 4 minutes pressing time, is cooled to 35 ℃, makes silicon chip stick on securely on polishing disk;
6) with polishing solution delivery device, polishing fluid is transported on polishing machine workbench, on polishing machine workbench, treating polished silicon slice upper surface adopts polishing fluid to carry out chemically mechanical polishing, polish temperature is 35 ℃, polishing fluid pH value is 8.7, polished silicon chip is removed after thickness reaches 10 microns and is stopped polishing, by pure water rinsing, removes polished silicon slice remained on surface polishing fluid, be placed in again the hot pure water solution ultrasonic cleaning 10 minutes of 60 ℃, make the silicon chip of polishing separated from polishing disk.
1) glucose that is 2:3 by percentage by weight mixes with maltose, is heated to 160 ℃, heats while stirring it is melted completely, obtains mixing molasses solution;
2) polishing disk is placed on heater and is preheating to 75 ℃;
3) mixing molasses solution being dripped to rotating speed is, on the polishing disk of 1500 revs/min, to make the whole polishing disk upper surface of syrup solution uniform fold;
4) polished silicon chip is attached on polishing disk desired location, with rubber module, pushes polished silicon chip, the mixing molasses sample path length of polished silicon chip lower surface is evenly distributed;
5) on polished silicon chip, pressurize, pressure is 0.2MP again, and be 6 minutes pressing time, is cooled to 35 ℃, makes silicon chip stick on securely on polishing disk;
6) with polishing solution delivery device, polishing fluid is transported on polishing machine workbench, on polishing machine workbench, treating polished silicon slice upper surface adopts polishing fluid to carry out chemically mechanical polishing, polish temperature is 40 ℃, polishing fluid pH value is 9.2, polished silicon chip is removed after thickness reaches 15 microns and is stopped polishing, by pure water rinsing, removes polished silicon slice remained on surface polishing fluid, be placed in again the hot pure water solution ultrasonic cleaning 15 minutes of 65 ℃, make the silicon chip of polishing separated from polishing disk.
Embodiment 3
1) glucose that is 1:1 by percentage by weight mixes with maltose, is heated to 165 ℃, heats while stirring it is melted completely, obtains mixing molasses solution;
2) polishing disk is placed on heater and is preheating to 75 ℃;
3) mixing molasses solution being dripped to rotating speed is, on the polishing disk of 1600 revs/min, to make the whole polishing disk upper surface of syrup solution uniform fold;
4) polished silicon chip is attached on polishing disk, with rubber module, pushes polished silicon chip, the mixing molasses sample path length of polished silicon chip lower surface is evenly distributed;
5) on polished silicon chip, pressurize, pressure is 0.2MP again, and be 8 minutes pressing time, is cooled to 35 ℃, makes silicon chip stick on securely on polishing disk;
6) with polishing solution delivery device, polishing fluid is transported on polishing machine workbench, on polishing machine workbench, treating polished silicon slice upper surface adopts polishing fluid to carry out chemically mechanical polishing, polish temperature is 45 ℃, polishing fluid pH value is 9.7, polished silicon chip is removed after thickness reaches 20 microns and is stopped polishing, by pure water rinsing, removes polished silicon slice remained on surface polishing fluid, be placed in again the hot pure water solution ultrasonic cleaning 20 minutes of 70 ℃, make the silicon chip of polishing separated from polishing disk.
Claims (2)
1. adopt and mix the method that fructose is pasted the silicon polishing of silicon chip, it is characterized in that its step is as follows:
1) glucose that is 1～3:3 by percentage by weight mixes with maltose, is heated to 155～165 ℃, heats while stirring it is melted completely, obtains mixing molasses solution (3);
2) polishing disk (2) is placed on heater and is preheating to 75 ℃;
3) mixing molasses solution (3) being dripped to rotating speed is that the polishing disk (2) of 1400～1600 revs/min is upper, makes the whole polishing disk of syrup solution (3) uniform fold (2) upper surface;
4) polished silicon chip (4) is attached on polishing disk, with rubber module, pushes polished silicon chip (4), make mixing molasses solution (3) thickness distribution of polished silicon chip (4) lower surface even;
5) again in the upper pressurization of polished silicon chip (4), pressure is 0.2MP, and be 4～8 minutes pressing time, is cooled to 35 ℃, and silicon chip is sticked on polishing disk (2) securely;
6) with polishing solution delivery device (1), polishing fluid is transported on polishing machine workbench (5), on polishing machine workbench (5), treating polished silicon slice (4) upper surface adopts polishing fluid to carry out chemically mechanical polishing, polish temperature is 35～45 ℃, polishing fluid pH value is 8.7～9.7, polished silicon chip (4) is removed after thickness reaches 10～20 microns and is stopped polishing, by pure water rinsing, remove polished silicon slice remained on surface polishing fluid, be placed in again the hot pure water solution ultrasonic cleaning 10～20 minutes of 60～70 ℃, make the silicon chip of polishing separated from polishing disk.
2. a kind of employing according to claim 1 mixed the method that fructose is pasted the silicon polishing of silicon chip, it is characterized in that described polishing fluid consisting of by weight percentage: silicon dioxide gel: organic base: activating agent: water=0.75:0.1:0.5:20.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310696341.2A CN103692337A (en) | 2013-12-18 | 2013-12-18 | Silicon wafer polishing method for adopting mixed fructose to paste silicon wafers |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310696341.2A CN103692337A (en) | 2013-12-18 | 2013-12-18 | Silicon wafer polishing method for adopting mixed fructose to paste silicon wafers |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377237A (en) * | 2014-12-02 | 2015-02-25 | 杭州晶地半导体有限公司 | Low-voltage IGBT thin crystal chip and preparation method thereof |
| CN115106914A (en) * | 2022-05-25 | 2022-09-27 | 无锡海力自控工程有限公司 | Sticking polishing process of monocrystalline thin silicon wafer |
| CN115415912A (en) * | 2022-08-03 | 2022-12-02 | 天津中环领先材料技术有限公司 | Silicon wafer polishing device and polishing method adopting same |
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| CN103374750A (en) * | 2012-04-28 | 2013-10-30 | 上海硅酸盐研究所中试基地 | Seed crystal fixing method for SiC crystal grown by PVT (Physical Vapor Transportation) process |
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2013
- 2013-12-18 CN CN201310696341.2A patent/CN103692337A/en active Pending
Patent Citations (5)
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| JPH0883781A (en) * | 1994-09-12 | 1996-03-26 | Shin Etsu Handotai Co Ltd | Abrasive and polishing method for polishing silicon wafer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377237A (en) * | 2014-12-02 | 2015-02-25 | 杭州晶地半导体有限公司 | Low-voltage IGBT thin crystal chip and preparation method thereof |
| CN115106914A (en) * | 2022-05-25 | 2022-09-27 | 无锡海力自控工程有限公司 | Sticking polishing process of monocrystalline thin silicon wafer |
| CN115106914B (en) * | 2022-05-25 | 2024-06-04 | 弘元绿色能源股份有限公司 | Pasting and polishing process of monocrystalline silicon wafer |
| CN115415912A (en) * | 2022-08-03 | 2022-12-02 | 天津中环领先材料技术有限公司 | Silicon wafer polishing device and polishing method adopting same |
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Application publication date: 20140402 |